CN113948620A - Integrated micro LED chip and manufacturing method thereof - Google Patents
Integrated micro LED chip and manufacturing method thereof Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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Abstract
The invention discloses an integrated micro LED chip and a manufacturing method thereof, wherein the integrated micro LED chip comprises a substrate, a luminous layer, a metal connecting layer and a packaging layer, the luminous layer comprises a quantum dot layer and a luminous piece, the metal connecting layer comprises a welding spot layer, the luminous piece comprises a first electrode and a second electrode, the quantum dot layer is arranged corresponding to the luminous piece, the welding spot layer comprises a first welding spot area and a second welding spot area, the first welding spot area is electrically connected with the first electrodes in all the luminous pieces, and the second welding spot area is electrically connected with the second electrodes in the single luminous piece. The invention can be directly packaged on the circuit board, does not need a packaging process, has low overall processing cost, and can solve the problems of crystal sliding, crystal running, crystal conversion and the like easily caused by the Micro LED in the traditional crystal fixing process; the contrast between a bright area and a dark area can be highlighted, the black ratio and the sharpness are improved, and the transfer efficiency and the yield of mass transfer are improved.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to an integrated micro LED chip and a manufacturing method thereof.
Background
The LED has a series of advantages of energy conservation, environmental protection, shock resistance, safety and the like, and is widely applied in the fields of illumination, display and the like. The LED display screen is taken as a high-tech product to attract high attention of people. The intelligent full-color display screen which is controlled by a computer and integrates light and electricity has been widely applied to the fields of advertising media, entertainment culture, traffic guidance, sports and the like, and the pixel points of the intelligent full-color display screen are red, green and blue LEDs which are arranged in a dot matrix manner, so that full-color display of pictures is realized. With the popularization of LED display screens in the display field, the LED chips of three colors of red, green and blue and the distance between the chips need to be reduced, and when the LED chips are reduced to less than 100 μm, the chip size is far beyond the process limit of the conventional chip transfer method, so that the batch transfer is performed by using a large amount of transfer of a plurality of tiny chips in the industry.
The existing RGB-LED display screen is independent and separated before packaging, and massive quantities of R, G, B tricolor LEDs need to be transferred to a packaging substrate in sequence, so that the RGB tricolor LEDs are uniformly mixed, the problems of low transfer yield, high transfer precision requirement, low transfer process yield and the like exist in a massive quantity transfer mode, and the transfer yield is lower when the number of times of massive quantity transfer is more; the three-color LED chips of the RGB-LED display screen have small size, large quantity and high packaging cost; meanwhile, the small size causes the area of the bonding pad to be small, the welding area to be small, a proper amount of welding materials to be difficult to uniformly inject into the welding area, the packaging-level process requirement and precision are low, poor welding is easy to occur during packaging and die bonding, the abnormal phenomena of die slipping, die running, die transferring and the like frequently occur, the packaging yield and the packaging reliability are greatly reduced, and the integral processing cost is further improved; in addition, adjacent LEDs in the three-color LEDs of the RGB-LED display screen are mutually influenced in light emitting, and no light absorption medium exists between the adjacent LEDs, so that a non-light emitting area (dark area) between the adjacent LEDs is not obviously compared with an LED light emitting area, and the RGB-LED display screen has the defects of low contrast, low black ratio, weak gray scale, narrow color gamut and the like.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an integrated Micro LED chip and a manufacturing method thereof, which can connect a plurality of Micro LED chips and directly package the Micro LED chips on a circuit board, avoid a packaging process, have low overall processing cost, and simultaneously can solve the problems of crystal sliding, crystal running, crystal rotation and the like easily occurring in the traditional crystal fixing process of the Micro LED.
The technical problem to be solved by the present invention is to provide an integrated micro LED chip and a method for manufacturing the same, which can improve black ratio and sharpness, so that the device has a better display effect, and can reduce the number of times and difficulty of mass transfer, reduce the processing cost, and improve the efficiency and yield of mass transfer.
In order to solve the above technical problems, the present invention provides an integrated micro LED chip, which includes a substrate, a light emitting layer, a metal connection layer, and an encapsulation layer.
The luminescent layer comprises a quantum dot layer and a plurality of luminescent pieces, and the metal connecting layer comprises a welding spot layer.
The substrate with the quantum dot layer is located one side of illuminating part light-emitting, the solder joint layer is located the opposite side of illuminating part, the quantum dot layer is located the illuminating part with between the substrate, the illuminating part includes first electrode and second electrode.
The quantum dot layer is arranged corresponding to the light-emitting pieces, the welding spot layer comprises a first welding spot area and a second welding spot area, the first welding spot area is electrically connected with the first electrodes in all the light-emitting pieces, and the second welding spot area is electrically connected with the second electrodes in the single light-emitting pieces respectively.
The packaging layer covers the surface of the integrated micro LED chip.
In an improvement of the above scheme, the light emitting elements are arranged in an array, and the pins of the first solder joint area and the second solder joint area are located at the edge or the edge intersection of the integrated micro LED chip.
As a modification of the above, the light emitting member includes a plurality of light emitting units, each of which includes at least 3 light emitting sub-units, and the 3 light emitting sub-units can emit the same or different colors.
The substrate and the electrode of each light-emitting subunit are mutually independent, and each light-emitting subunit can be controlled independently.
As an improvement of the above scheme, a photosensitive layer is coated on one side of the substrate close to the light emitting member, the photosensitive layer can block light, a filling region for filling a quantum dot material is arranged in a local region of the photosensitive layer, the quantum dot material is cured in the filling region to form a quantum dot layer, and the surface of the quantum dot layer and the surface of the photosensitive layer are in the same plane.
As the improvement of above-mentioned scheme, in the illuminating part with the light emitting face opposite one side with the illuminating part lateral part all is equipped with the barrier layer, the barrier layer comprises photoresist material and has insulating properties, the barrier layer parcel the non-light emitting face and the lateral part of illuminating part, with the separation the lateral light of illuminating part, the local area of barrier layer is equipped with the pad district.
The metal connecting layer further comprises a metal bridging layer, and the metal bridging layer is arranged in the pad area.
As an improvement of the above solution, the metal bridge layer includes a first bridge layer and a second bridge layer, the first bridge layer is electrically connected to the pad of the first electrode, and the second bridge layer is electrically connected to the pad of the second electrode.
All the first bridging layers are connected to form the first welding point areas, and each separate second bridging layer is led out to form the second welding point areas.
As an improvement of the above scheme, the metal connection layer further includes electrode pins, and the electrode pins are electrically connected to the first pad area and the second pad area, respectively.
The end face of the electrode pin is exposed outside the packaging layer to form a packaging pin, and the packaging pin is located at the edge or the edge intersection of the integrated micro LED chip.
As an improvement of the above scheme, a sticky layer is arranged between the luminescent piece and the quantum dot layer, the luminescent piece and the quantum dot layer are respectively adhered to two sides of the sticky layer, and the sticky layer has light transmittance.
The light emitting piece is a flip LED chip.
As an improvement of the above scheme, the first electrode is a negative electrode, and the first pad area is electrically connected to the first electrodes of all the light emitting elements to form a common cathode pad area.
The second electrode is an anode, and the second welding point areas are respectively and electrically connected with the second electrodes in the single luminous piece to form independent anode welding point areas.
Correspondingly, the invention also provides a manufacturing method of the integrated micro LED chip, which comprises the following steps:
forming a photosensitive layer on the surface of a substrate, forming a filling region in a local region of the photosensitive layer, and coating a quantum dot material in the filling region to form a quantum dot layer;
adhering double-sided adhesive materials to the quantum dot layer and the photosensitive layer to form an adhesive layer, adhering a light-emitting piece to the surface of the adhesive layer, and enabling the light-emitting face of the light-emitting piece to face the substrate;
covering a light resistance material on the surface of the sticky layer, the side surface of the light-emitting piece and the non-light-emitting surface to form a blocking layer, and separating a pad area in a local area of the blocking layer;
depositing a metal bridging layer in the bonding pad area by adopting an evaporation or sputtering mode, wherein the metal bridging layer comprises a first bridging layer and a second bridging layer, the first bridging layer is electrically connected with the bonding pad of the first electrode, and the second bridging layer is electrically connected with the bonding pad of the second electrode;
connecting all the first bridging layers together and leading out in an evaporation or sputtering mode to form a first welding spot area, and leading out the second bridging layers independently in an evaporation or sputtering mode to form a second welding spot area;
the pin positions of the first welding point area and the second welding point area are arranged at the edge of the integrated micro LED chip or the edge intersection;
and depositing metal layers on the first welding spot area and the second welding spot area to form electrode pins, performing glue pouring on the surface of the integrated micro LED chip to form a packaging colloid, and exposing the electrode pins of the first welding spot area and the second welding spot area to form packaging pins.
The implementation of the invention has the following beneficial effects:
the integrated Micro LED chip integrated array is formed by a full common-cathode structure and a plurality of independent anodes, so that the layout and the structural design of the Micro LED chip are flexible and changeable, the integrated Micro LED chip can be directly packaged on a circuit board after a plurality of packaging pins are formed, the packaging process can be avoided, the precise drive board wiring design is not needed, and the overall processing cost is low.
Moreover, the invention replaces the traditional single or multiple chip die bonding process of the packaging level with high process requirement and low precision by the semiconductor level chip electrode interconnection process with high process requirement and high precision, and forms an electric connection for multiple independent Micro LEDs to form a full common cathode structure and a plurality of independent anode structures.
Moreover, Micro LEDs in the integrated Micro LED chip array are small in size, large in number and concentrated in single light color, a blocking layer on the side portion of each Micro LED and a photosensitive layer between adjacent quantum dot layers can highlight the difference between a light emitting area where the Micro LEDs are located and a photosensitive layer dark area with extremely low light transmittance, the contrast, the black ratio and the sharpness can be greatly improved, and the device has the advantages of being good in display effect, remarkable in gray scale, wide in color gamut, vivid in color and the like.
Meanwhile, the integrated Micro LED chip integrated array formed by a full common cathode structure and a plurality of independent anodes can integrate Micro LED chips with different sizes in the same array, a plurality of single-color or multi-color Micro LEDs are accurately placed on a quantum dot layer by using a one-time mass transfer mode, and the single-color or multi-color Micro LEDs emitted by the Micro LED chips can change the light color when passing through a quantum dot material by using the characteristics of the quantum dot material, so that the output light color achieves the RGB three-color mixing effect, therefore, the single-color or multi-color Micro LEDs with different sizes can also realize one-time mass transfer at the same time, the problem that the existing RGB Micro LEDs need to respectively carry out R, G, B three-color mass transfer, namely three-time mass transfer is avoided, the process is greatly simplified, the processing cost is greatly reduced, and the transfer efficiency and the yield of the mass transfer are improved.
Drawings
FIG. 1 is a schematic diagram of an integrated micro LED chip according to the present invention;
FIG. 2 is a diagram of an array layout of a first embodiment of an integrated micro LED chip according to the present invention;
FIG. 3 is a diagram of an array layout of a second embodiment of an integrated micro LED chip according to the present invention;
FIG. 4 is a distribution diagram of an array of a third embodiment of an integrated micro LED chip according to the present invention;
FIG. 5 is a diagram of an array layout of a fourth embodiment of an integrated micro LED chip according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1 and 2, the integrated micro LED chip provided by the present invention includes a substrate 1, a light emitting layer 2, a metal connection layer 3 and an encapsulation layer 7, wherein the light emitting layer 2 includes a quantum dot layer 22 and a light emitting element 21, the light emitting layer 2 is capable of emitting a desired light color, the metal connection layer 3 is used to form an electrical circuit for the light emitting element 21, the metal connection layer 3 includes a solder joint layer 31, and the light emitting element 21 includes a first electrode 211 and a second electrode 212. The packaging layer 7 covers the surface of the integrated micro LED chip, so that the whole integrated micro LED chip is fixed.
The substrate 1 and the quantum dot layer 22 are arranged on one side of the luminescent piece 21, the welding spot layer 31 is arranged on the other side of the luminescent piece 21, and the quantum dot layer 22 is arranged between the luminescent piece 21 and the substrate 1. The substrate 1 may be made of a transparent material with moderate hardness and thickness and high light transmittance, such as glass, and the light emitting element 21 will pass through the quantum dot layer 22 when emitting light, then pass through the quantum dot layer 22 to reach the substrate 1, and finally penetrate through the substrate 1 to form different light colors.
Specifically, the quantum dot layer 22 is located opposite to each of the light emitting members 21 so that the light emitted from the light emitting members 21 can directly pass through the quantum dot layer 22. The quantum dot layer 22 is made of a quantum dot material, and the quantum dot layer 22 is provided corresponding to the position of the light emitting element 21. The quantum dot material of the quantum dot layer 22 is matched with the light color emitted by the light emitting element 21 to control the light color finally output.
For example, the light emitting element 21 emits blue light to pass through the corresponding class a quantum dot material, and finally outputs red light; the light emitting piece 21 emits blue light, and the blue light penetrates through the corresponding B-type quantum dot material, so that green light can be output finally; the light emitting piece 21 emits green light to pass through the corresponding C-type quantum dot material, and finally red light can be output; the green light emitted by the light emitting element 21 passes through the corresponding D-type quantum dot material, and finally the blue light … … is output by analogy, and the conversion of the light emitting color of the light emitting element 21 to three or more colors such as RGB can be realized by utilizing the quantum dot layer. The RGB three-color mixing can be realized by utilizing the corresponding relation between the luminescent piece 21 and the quantum dot layer 22, so that the RGB three-color mixing can be realized only by carrying out mass transfer on a plurality of single-color or multi-color Micro LEDs once and matching different or same quantum dot materials, and the process that the conventional RGB Micro LEDs need to carry out mass transfer of R, G, B three colors respectively is avoided, namely, mass transfer needs to be carried out three times, so that the number of times of mass transfer is greatly reduced, the process is greatly simplified, the processing cost is greatly reduced, and the transfer efficiency and the yield of mass transfer are improved.
The pad layer 31 includes a first pad region 311 and a second pad region 312, the first pad region 311 is electrically connected to the first electrodes 211 of all the light emitting members 21 through a semiconductor-grade electrode interconnection process, and the second pad region 312 is electrically connected to the second electrodes 212 of the single light emitting member 21. The semiconductor-grade chip electrode interconnection process is characterized in that N electrodes or P electrodes of a plurality of completely independent (LED substrates are separated from each other) LED chips are connected by adopting processes such as electron beam evaporation or sputtering deposition. Therefore, the first electrodes 211 of all the light emitting members 21 are all connected together to form a common electrode, the second electrode 212 of each light emitting member 21 is separately led out to form an independent electrode, and each light emitting member 21 can form a conductive loop by communicating the common electrode with the corresponding independent electrode, so that separate light emission is realized.
In a traditional packaging level die bonding process, the spacing between positive and negative electrodes of a single LED chip (die bonding spacing), the placing position between the LED chip and surrounding chips (chip spacing) and a packaging die bonding process (solder paste process) all influence the die bonding packaging effect, the die bonding packaging of a Micro LED chip usually adopts solder paste die bonding, the solder paste is melted and flows at high temperature, the solder paste flows to the surrounding due to excessive use amount, and at the moment, the positive and negative electrodes of the LED chip are communicated and short-circuited to cause electric leakage if the die bonding spacing is insufficient; if the chip spacing is not enough, the solder paste overflows to the surrounding LED chips to cause leakage failure; when the amount of the solder paste is small, poor soldering such as cold solder and empty solder can be caused. According to the invention, a semiconductor-grade chip electrode interconnection process is adopted, and the electrodes of the light-emitting element 21 are connected in series and are led out independently, so that the problems of roughness and low precision of a packaging and die bonding process are greatly solved; the problems of high die bonding reject ratio, high requirement for die bonding process development, more precise die bonding machine purchasing, more precise drive board wiring design and the like caused by dense array arrangement of Micro LED chips are solved. Therefore, the embodiment of the invention replaces the packaging level die bonding process with low process requirement and low precision by the semiconductor level chip electrode interconnection process with high process requirement and high precision, electrically connects the plurality of Micro LEDs to form a full common electrode structure and a plurality of independent electrode structures, can solve the problems of poor welding, crystal sliding, crystal running, crystal rotation and the like easily caused by the packaging and die bonding of the Micro LEDs, further reduces the overall processing cost, and greatly improves the packaging yield and the packaging reliability.
The light emitting elements 21 are arranged in an array, and the positions of the pins of the first solder joint region 311 and the second solder joint region 312 are distributed at the edge or the edge intersection of the integrated micro LED chip. Therefore, as for the light emitting members 21, as long as the electrodes thereof can be connected to the common electrode and the independent electrodes to provide independent light emitting functions, the light emitting members 21 of different sizes can be arranged in an array.
Therefore, according to the invention, through the full common electrode structure and the independent electrode structure, each light-emitting part 21 can independently emit light in the integrated array, flexible and changeable layout and structure can be formed, and the pin positions of the electrodes are distributed at the edge or the edge junction, so that the die bonding distance is large, the precise die bonding process and the precise drive board wiring design can be avoided, the integrated micro LED chip can be directly packaged on a circuit board, the packaging process is omitted, and the whole processing cost is further reduced.
It should be noted that the size of the light emitting member 21 is in the range of 10 μm to 100 μm, but is not limited thereto. Specifically, the light emitting member 21 includes one or more light emitting units, each of which includes at least 3 light emitting sub-units 213, the 3 light emitting sub-units 213 can emit the same or different colors, and when the colors emitted by the 3 light emitting sub-units 213 are different, the three colors are preferably red, green and blue. The smaller the size, the larger the number and the more concentrated the light color of the light emitting subunit 213, the smaller the pixel pitch presented by the display device, the finer the picture display, and the advantages of high black-to-black ratio, high gray level, high contrast, rich color, bright color, wide color gamut, etc. The substrate and the electrode of each light emitting sub-unit 213 are independent from each other, thereby achieving the effects of small size, large number and concentrated light color, and being convenient for separate arrangement. In addition, each of the light emitting subunits can be independently controlled, and the current used by the light emitting subunits 213 of different colors may be different, so that each of the light emitting subunits 213 can be independently controlled, thereby ensuring the brightness uniformity among different colors of RGB, red, green and blue, and avoiding the phenomenon of staggered bright areas and dark areas.
In order to improve quantum dot layer 22 filling position's accuracy, base plate 1 is close to one side coating of luminous piece 21 has photosensitive layer 5, photosensitive layer 5 comprises photosensitive material, photosensitive layer 5 can the separation light, local area is equipped with filling area 51 in the photosensitive layer 5, filling area 51 is formed by photosensitive material local area visible light decomposition, and evenly coating the quantum dot material is in afterwards in filling area 51, can form after the thermal cure quantum dot layer 22. The surface of the quantum dot layer 22 and the surface of the photosensitive layer 5 are on the same plane, so as to ensure that the subsequent adhesive layer 4 can be evenly paved on the quantum dot layer 22 and the photosensitive layer 5. Glue glutinous layer 4 and locate luminous piece 21 with between the quantum dot layer 22, luminous piece 21 with quantum dot layer 22 adhere respectively in glue glutinous layer 4's both sides, in order not to influence luminous piece 21 printing opacity, glue glutinous layer 4 and preferably use the two-sided material of gluing that has the light transmissivity and make, simultaneously glue glutinous layer 4's light absorption rate low, can reduce the light that luminous piece 21 sent passes through glue the absorbed proportion of occuping when gluing glutinous layer 4, moreover glue glutinous layer 4 and still possess certain pliability, thereby the protection luminous piece 21 is damaged by the rupture in subsequent technology operation.
In order to prevent because the photochromic inconsistent, dark space and the not obvious scheduling problem of bright area contrast that produce of no extinction medium between mutual interference, the adjacent LED of illuminating part 21 side direction light, in the illuminating part 21 with the top of the opposite one side of light emitting area with illuminating part 21 lateral part all is equipped with barrier layer 6, barrier layer 6 comprises photoresist material, barrier layer 6 can the separation illuminating part 21's side direction light. The barrier layer 6 with adjacent between the quantum dot layer 22 photosensitive layer 5 can make luminous piece 21 place send out bright district and luminousness extremely low the difference in photosensitive layer 5 dark area is more obvious, in addition characteristics such as luminous piece 21 size is little, the number is many, single photochromic concentrates, can improve contrast, black ratio and the acutance of device greatly, can further highlight the advantage that the display effect of device is good, the grey scale is showing, the colour gamut is wide, the color is bright and so on.
The barrier layer 6 also has an insulating property capable of isolating the adjacent metal bridge layer 32, the first pad region 311, the second pad region 312, the light emitting member 21, and the electrode pin 33 from each other. The barrier layer 6 is easily decomposed by light, and the barrier layer 6 located above the light emitting element 21 on the side opposite to the light emitting surface can be decomposed into a pad region 61 by utilizing its characteristics, and the pad of the first electrode 211 and the pad of the second electrode 212 are partially exposed from the pad region 61. The barrier layer 6 is preferably made of PI polyimide material, but is not limited thereto.
The metal connection layer 3 further includes a metal bridge layer 32, and the metal bridge layer 32 is disposed in the pad region 61 and electrically connected to the pad of the first electrode 211 and the pad of the second electrode 212. Specifically, the metal bridge layer 32 includes a first bridge layer 321 and a second bridge layer 322, the first bridge layer 321 is electrically connected to the pad of the first electrode 211, and the second bridge layer 322 is electrically connected to the pad of the second electrode 212. The first pad regions 311 are electrically connected to all the first bridge layers 321 to form a common electrode of the light emitting member 21, and the second pad regions 312 are electrically connected to a single second bridge layer 322 to form independent electrodes of the light emitting member 21. The metal in the metal bridge layer 32 is preferably composed of various metals or alloys such as Cr, Ni, Co, Sn, Cu, Au, Pt, Al, Ti, etc.
All the first bridge layers 321 are connected through a semiconductor-grade chip electrode interconnection process to form the first pad region 311, and each individual second bridge layer 322 is led out to form the second pad region 312. Through the array integration design, the light-emitting subunits 213 with 3n (n is more than or equal to 1), single light color or multiple light colors and any size can be integrated together to form a chip integrated array with the size equivalent to that of the traditional chip (more than 250um), so that the problems of roughness and low precision of the packaging and die bonding process are greatly solved; the problems of high die bonding reject ratio, high requirement for die bonding process development, more precise die bonding machine purchasing, more precise drive board wiring design and the like caused by dense array arrangement of Micro LED chips are solved.
In order to integrally fix and encapsulate the integrated micro LED chip, the integrated micro LED chip further includes an encapsulation layer 7 and a plurality of electrode pins 33, and the plurality of electrode pins 33 are electrically connected with the first pad region 311 and the second pad region 312, respectively, to form a pin of the first electrode 211 and a pin of the second electrode 212. The electrode pin 33 is preferably composed of various metals or alloys such as Sn, Cu, etc., but is not limited thereto.
The encapsulation colloid covers the whole surface of the integrated micro LED chip to form the encapsulation layer 7, and the encapsulation layer 7 preferably uses common glue such as liquid epoxy resin, but is not limited thereto. In order to lead out the electrode pins 33 for direct packaging with a subsequent circuit board, the electrode pins 33 may be exposed out of the surface of the package layer 7 by grinding or the like, and finally form the package pins 34, where the package pins 34 are distributed at the edges or at the intersection of the edges of the integrated micro LED chip, so as to reserve more space for the distribution of the light emitting sub-units 213 with different sizes, and facilitate direct packaging with the subsequent circuit board.
Preferably, the light emitting sub-unit 213 is a flip LED chip, and the flip LED chip has a good heat dissipation function, and also has the advantages of low voltage, high brightness, high reliability, and the like, and is lower in cost and higher in yield than a Micro LED chip with a vertical structure. The pad of the first electrode 211 is close to the first bridge layer 321, and the pad of the second electrode 212 is close to the second bridge layer 322.
Preferably, the first electrode 211 is a negative electrode, and the second electrode 212 is a positive electrode. The first welding spot region 311 is connected with the cathodes of all the light-emitting subunits 213 through an electrode interconnection process to form a common cathode, the second welding spot region 312 is respectively connected with the anodes of the single light-emitting subunits 213 to form independent anodes, and an integrated type LED small-spacing chip integrated array is formed in a mode of adding a plurality of independent anodes to a common cathode structure. In other embodiments, the first electrode 211 may also be an anode, and the second electrode 212 may be a cathode, in which case the first pad region 311 is connected to the anodes of all the light-emitting sub-units 213 to form a common anode, and the second pad regions 312 form independent cathodes with the cathodes of the individual light-emitting sub-units 213.
Preferably, each light emitting unit includes 3 light emitting sub-units 213, the number of the light emitting units is n, n ≧ 1, and then the number of all the light emitting sub-units 213 is 3 n. Therefore, the first electrodes 211 of all the light emitting sub-units 213 are connected in series to form 1 common electrode, and each of the second electrodes 212 is separately led out to form n independent electrodes.
Referring to fig. 2, when n is equal to 1, the number of the light emitting sub-units 213 is 3, and there are 3 independent electrodes and 1 common electrode, and the electrode pins 33 of the 3 independent electrodes and 1 common electrode are respectively located at four corners of the integrated micro LED chip.
Referring to fig. 3 and 4, when n > 1 and n is an even number, the light-emitting subunit 213 may be divided into 2 columns, the second electrodes 212 of the light-emitting subunit 213 in the left column are located at the left side of the integrated micro LED chip, the number of the second electrodes is 3n/2, and 3n/2 independent electrodes are formed by separately leading out the second electrodes 212 to the left edge of the integrated micro LED chip; the second electrodes 212 of the light emitting sub-units 213 in the second column are located at the right side of the integrated micro LED chip, the number of the second electrodes is 3n/2, and another 3n/2 independent electrodes are formed at the positions of separately leading out the second electrodes 212 to the right edge of the integrated micro LED chip respectively; and the first electrodes 211 of the 3n light emitting subunits 213 are located in the middle of the integrated micro LED chip, and all the first electrodes 211 are connected in series and LED out to the edge of the integrated micro LED chip to form 1 common electrode.
Referring to fig. 5, when n > 1 and n is an odd number, the light emitting subunits 213 may be also divided into 2 rows, wherein (3n-1)/2 light emitting subunits 213 are disposed in the left row of the integrated micro LED chip, the second electrode 212 is disposed at the left side of the integrated micro LED chip, and (3n-1)/2 independent electrodes are formed by separately drawing the second electrode 212 to the left edge of the integrated micro LED chip, respectively; arranging (3n-1)/2 light-emitting subunits 213 in the right column of the integrated micro LED chip, positioning the second electrode 212 at the right side of the integrated micro LED chip, and separately leading out the second electrode 212 to the position of the right edge of the integrated micro LED chip to form (3n-1)/2 independent electrodes; and finally, 1 light-emitting subunit 213 is remained, the last 1 light-emitting subunit 213 is placed between 2 columns of light-emitting subunits 213 and is located at the edge of the integrated micro LED chip, the second electrode 212 of the light-emitting subunit is separately LED out to the left side or the right side of the integrated micro LED chip, the first electrode 211 of the light-emitting subunit is connected in series with the first electrodes 211 of the other light-emitting subunits 213, and the light-emitting subunits are LED out to the right side or the left side of the integrated micro LED chip (when the second electrode 212 of the last light-emitting subunit 213 is located at the left side, the first electrode 211 is located at the right side, and when the second electrode 212 of the last light-emitting subunit 213 is located at the right side, the first electrode 211 is located at the left side).
Correspondingly, the invention also provides a manufacturing method of the integrated micro LED chip, which comprises the following steps:
a) a photosensitive layer 5 is formed on the surface of a substrate 1, a filling region 51 is formed in a local region of the photosensitive layer 5, and a quantum dot material is coated in the filling region 51 to form a quantum dot layer 22.
Preferably, the substrate 1 is made of a transparent material such as glass with moderate hardness and thickness and high light transmittance. The appropriate hardness and thickness make the integrated micro LED chip structure less prone to warping and easy to cut, while the high light transmittance helps to avoid light absorption while passing through the substrate 1. Further, the photosensitive layer 5 may be formed by coating a photosensitive material, which is opaque or has a very low transmittance, and may be, for example, a photoresist material containing carbon with a very high doping degree, on the surface of the substrate 1 by a brushing method, a spraying method, or a dipping method.
In order to form the quantum dot layer 22, the decomposition product in the local region may be removed by a chemical solution such as a developing solution to form the filling region 51 according to the characteristic that the local region of the photosensitive material is easily decomposed by light, and the quantum dot material may be applied to the filling region 51 by a high precision quantum dot spraying method to form the quantum dot layer 22. The quantum dot layer 22 needs to be cured by heating after being formed. In order to enable the subsequent adhesive layer 4 to be laid on the quantum dot layer 22 and the photosensitive layer 5, the quantum dot layer 22 has a thickness equal to that of the photosensitive layer 5.
It should be noted that the light emitting color of the light emitting element 21 depends on the kind of the quantum dot material, that is, the monochromatic light emitted by the light emitting element 21 changes the light color when passing through the quantum dot material, so that the output light color achieves the RGB three-color mixing effect. If the light emitting element 21 emits blue light and passes through the corresponding A-type quantum dot material, red light is finally output; the light emitting piece 21 emits blue light, and the blue light penetrates through the corresponding B-type quantum dot material, so that green light can be output finally; the light emitting piece 21 emits green light to pass through the corresponding C-type quantum dot material, and finally red light can be output; the green light emitted by the light emitting element 21 passes through the corresponding D-type quantum dot material, and finally the blue light … … is output by analogy, so that the light emitting color of the single light color light emitting element 21 can be converted into three or more colors such as RGB.
b) The quantum dot layer 22 with form on the photosensitive layer 5 and glue layer 4 glue the attached illuminating part 21 in layer 4 surface, the light emitting face orientation of illuminating part 21 the base plate 1.
Preferably, it is used for fixing to glue layer 4 luminous piece 21 can cover in with two-sided gluing material through reverse mould or press mold technology in quantum dot layer 22 with in order to form gluing layer 4 on the photosensitive layer 5, adopt the method of huge transfer again glue 4 attached luminous piece 21 in surface of gluing layer, luminous piece 21 is preferably the flip-chip LDE chip, the distribution of the positive electrode pad, the negative electrode pad of luminous piece 21 along with follow-up encapsulation pin 34 is adjusted in a flexible way, the sapphire face and the two-sided gluing material adhesion of luminous piece 21, promptly the light emitting area orientation of luminous piece 21 base plate 1. The adhesive layer 4 needs to have the characteristics of good light transmittance, low light absorption rate, flexibility and the like, can reduce the absorbed ratio of the light of the luminescent member 21 when passing through the adhesive layer 4, and can also protect the luminescent member 21 from being broken and damaged in the subsequent process.
Preferably, the light emitting member 21 includes one or more light emitting units, each of which includes at least 3 light emitting sub-units 213, and the 3 light emitting sub-units 213 can emit the same or different colors. Will luminous subunit 213 shift to glue and form integrated form array structure on the layer 4, utilize luminous piece 21 with quantum dot layer 22's corresponding relation can realize that the RGB three-colour mixes, consequently only need carry out a huge transfer with many monochromatic or polychrome Micro LED, cooperates different or the same quantum dot material, can realize that the RGB three-colour mixes, has avoided the miniature LED of current RGB to need carry out the process that R, G, B three-colour's huge transfer respectively, need carry out cubic huge transfer promptly to make the process simplify greatly, processing cost greatly reduced. In addition, the smaller the size, the larger the number and the more concentrated the light color of the light emitting sub-units 213, the better the display effect of the device, the higher the contrast, the more prominent the gray scale, the wider the color gamut and the sharper the color.
c) The surface of the adhesive layer 4 and the side surface and the non-luminous surface of the luminous piece 21 are covered with a photoresist material to form a barrier layer 6, and a pad area 61 is separated from the local area of the barrier layer 6.
Preferably, can will through applying paint with a brush, spraying method or dip coating method photoresist cover in glue layer 4 surface and the side and the back of illuminating part 21, barrier layer 6 is except sheltering from illuminating part 21's lateral part light, can make illuminating part 21 place send bright area and luminousness extremely low the difference in photosensitive layer 5 dark space is more obvious, in addition illuminating part 21 characteristics such as the size is little, the number is many, single photochromic is concentrated can improve contrast, black ratio and the acutance of device greatly, can further highlight the advantage that the display effect of device is good, the grey scale is showing, wide, the color is bright and so on. The barrier layer 6 also has insulation properties, and can isolate the adjacent metal bridge layer 32, the first pad region 311, the second pad region 312, the light emitting member 21 and the electrode pin 33 from each other, thereby preventing a short circuit of the chip.
Further, since the resist is easily decomposed by light, the pad region 61 is decomposed in a partial region of the barrier layer 6 by a developer, and partial regions of the positive electrode pad and the negative electrode pad of each of the light emitting members 21 are exposed, so that the electrode metal can be deposited in these regions. The photoresist material may be selected from a high temperature resistant and viscous PI polyimide, but is not limited thereto.
d) And depositing a metal bridge layer 32 in the pad region by adopting an evaporation or sputtering manner, wherein the metal bridge layer comprises a first bridge layer 321 and a second bridge layer 322, the first bridge layer 321 is electrically connected with the pad of the first electrode 211, and the second bridge layer 322 is electrically connected with the pad of the second electrode 212.
Preferably, the metal bridge layer 32 is deposited in the pad region 61 by an evaporation or sputtering process, and the metal layer structure is composed of various metals or alloys such as Cr, Ni, Co, Sn, Cu, Au, Pt, Al, Ti, etc. The metal bridging layer 32 is deposited in a laminated metal deposition mode, the internal stress between metals can be eliminated in the laminated metal deposition mode, and meanwhile, the flexibility can be enhanced, so that the metal is not cracked due to the fact that the metal is subjected to downward extrusion force during subsequent glue filling.
e) And connecting all the first bridging layers 321 together by adopting an evaporation or sputtering mode and leading out to form a first welding point region 311, and independently leading out the second bridging layers 322 by adopting an evaporation or sputtering mode to form a second welding point region 312.
Specifically, the first bridge layer 321 is electrically connected to a pad of the first electrode 211 of the light-emitting sub-unit 213, and the second bridge layer 322 is electrically connected to a pad of the second electrode 212 of the light-emitting sub-unit 213. All the first bridge layers 321 are connected together and led out by adopting an evaporation or sputtering method to form a first welding point region 311, and the second bridge layers 322 are led out separately by adopting an evaporation or sputtering method to form a second welding point region 312. The embodiment of the invention replaces the packaging level die attach process with low process requirements and low precision by the semiconductor level chip electrode interconnection process with high process requirements and high precision, and electrically connects a plurality of the light emitting photon units 213 to form a full common electrode structure and a plurality of independent electrode structures, thereby greatly solving the problems of roughness and low precision of the packaging die attach process; the problems of high die bonding reject ratio, high requirement-required die bonding process development, more precise die bonding machine purchasing, more precise drive plate wiring design and the like caused by dense array arrangement of Micro LED chips are solved, so that the problems of poor welding, crystal sliding, crystal running, crystal rotation and the like easily caused by die bonding in Micro LED packaging are solved, the overall processing cost is further reduced, and the packaging yield and the packaging reliability are greatly improved.
f) The pin locations of the first pad region 311 and the second pad region 312 are located at the edge of the integrated micro LED chip or at the edge intersection.
Specifically, according to the different numbers of the light emitting units, the pin positions of the first solder joint region 311 are disposed at the edge or the edge intersection, so that more spaces can be reserved for the distribution of the light emitting subunits 213 with different sizes, and the direct packaging with the subsequent circuit board is facilitated.
g) Depositing metal layers on the first welding point area 311 and the second welding point area 312 to form electrode pins 33, performing glue filling packaging on the surface of the integrated micro LED chip, and exposing the electrode pins of the first welding point area 311 and the second welding point area 312 to form packaging pins 33.
Specifically, through the yellow light technology, utilize the mode of electroplating or chemical plating, be in respectively first solder joint district 311 with the top deposit metal layer of second solder joint district 312 forms electrode pin 33, electrode pin 33 also adopts the mode of stromatolite metal deposition to deposit, can eliminate intermetallic internal stress, also can avoid receiving when follow-up encapsulating about extrusion lead to the metal to split. Wherein the electrode pin 33 of the first pad region 311 forms a common electrode, and the electrode pin 33 of the second pad region 312 forms an independent electrode. The micro LED chip integrated array is formed by a common electrode structure and an independent electrode, and the light-emitting subunits 213 with 3n (n is more than or equal to 1), single light color or multiple light colors and any size can be integrated together by the design of the array integrated chip to form the chip integrated array with the size equivalent to that of the traditional chip (more than 250 um). According to the invention, the integrated Micro LED small-spacing chip integrated array is formed by adding a plurality of independent electrodes on the common electrode structure, so that the layout and the structure of the Micro LED chip are flexible and changeable, and after a plurality of packaging pins 34 are formed, the integrated Micro LED chip can be directly packaged on a circuit board, so that the packaging process can be avoided, and the overall processing cost is low.
And finally, performing glue filling on the whole surface of the integrated micro LED chip by a Moding glue filling packaging process to form a packaging layer 7, and exposing the electrode pins 33 of the first welding spot area 311 and the second welding spot area 312 to form packaging pins 34. The thickness of the packaging layer 7 is greater than the height of the electrode pins 33, so as to ensure that the packaging adhesive completely covers the surface of the whole integrated micro LED chip. And then, grinding the packaging layer 7 on the outer side surface of the electrode pin 33 by using a grinding process, so that the electrode pins 33 in the first welding point region 311 and the second welding point region 312 are exposed to form a packaging pin 34.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the present invention, therefore, the present invention is not limited by the appended claims.
Claims (10)
1. An integrated micro LED chip is characterized by comprising a substrate, a light-emitting layer, a metal connecting layer and an encapsulation layer;
the luminescent layer comprises a quantum dot layer and a luminescent piece, and the metal connecting layer comprises a welding spot layer;
the substrate and the quantum dot layer are arranged on one light emitting side of the light emitting piece, the welding spot layer is arranged on the other side of the light emitting piece, the quantum dot layer is arranged between the light emitting piece and the substrate, and the light emitting piece comprises a first electrode and a second electrode;
the quantum dot layer is arranged corresponding to the luminescent pieces, the welding spot layer comprises a first welding spot area and a second welding spot area, the first welding spot area is electrically connected with the first electrodes in all the luminescent pieces, and the second welding spot area is electrically connected with the second electrodes in the single luminescent pieces respectively;
the packaging layer covers the surface of the integrated micro LED chip.
2. The integrated micro LED chip of claim 1, wherein the light emitting elements are arranged in an array, and the leads of the first and second pad areas are located at the edge or at the edge intersection of the integrated micro LED chip.
3. The integrated micro LED chip according to claim 1, wherein the light emitting member comprises one or more light emitting units, each light emitting unit comprising at least 3 light emitting sub-units, the 3 light emitting sub-units being capable of emitting the same or different colors;
the substrate and the electrode of each light-emitting subunit are mutually independent, and each light-emitting subunit can be controlled independently.
4. The integrated micro LED chip according to claim 1, wherein a side of the substrate adjacent to the light emitting element is coated with a photosensitive layer, the photosensitive layer can block light, a filling region for filling a quantum dot material is formed in a local region of the photosensitive layer, the quantum dot material is cured in the filling region to form a quantum dot layer, and a surface of the quantum dot layer is coplanar with a surface of the photosensitive layer.
5. The integrated micro LED chip according to claim 1, wherein a blocking layer is disposed on a side of the light emitting element opposite to the light emitting surface and a side portion of the light emitting element, the blocking layer is made of a photoresist material and has insulation properties, the blocking layer wraps a non-light emitting surface and a side portion of the light emitting element to block lateral light of the light emitting element, and a pad region is disposed in a local region of the blocking layer;
the metal connecting layer further comprises a metal bridging layer, and the metal bridging layer is arranged in the pad area.
6. The integrated micro LED chip of claim 5, wherein the metal bridge layer comprises a first bridge layer electrically connected to the pad of the first electrode and a second bridge layer electrically connected to the pad of the second electrode;
all the first bridging layers are connected to form the first welding point areas, and each separate second bridging layer is led out to form the second welding point areas.
7. The integrated micro LED chip of claim 1, wherein the metal connection layer further comprises electrode pins electrically connected to the first and second pad regions, respectively;
the end face of the electrode pin is exposed outside the packaging layer to form a packaging pin, and the packaging pin is located at the edge or the edge intersection of the integrated micro LED chip.
8. The integrated micro LED chip according to claim 1, wherein an adhesive layer is disposed between the light emitting element and the quantum dot layer, the light emitting element and the quantum dot layer are respectively adhered to two sides of the adhesive layer, and the adhesive layer has light transmittance;
the light emitting piece is a flip LED chip.
9. The integrated micro LED chip according to any one of claims 1-8, wherein the first electrode is a negative electrode, and the first pad area is electrically connected to the first electrodes of all of the light emitting elements to form a common cathode pad area;
the second electrode is an anode, and the second welding point areas are respectively and electrically connected with the second electrodes in the single luminous piece to form independent anode welding point areas.
10. A method of fabricating an integrated micro LED chip according to any of claims 1 to 9, comprising the steps of:
a) forming a photosensitive layer on the surface of a substrate, forming a filling region in a local region of the photosensitive layer, and coating a quantum dot material in the filling region to form a quantum dot layer;
b) forming a sticky layer on the quantum dot layer and the photosensitive layer, attaching a light-emitting piece on the surface of the sticky layer, wherein the light-emitting surface of the light-emitting piece faces the substrate;
c) covering a light resistance material on the surface of the sticky layer, the side surface of the light-emitting piece and the non-light-emitting surface to form a blocking layer, and separating a pad area in a local area of the blocking layer;
d) depositing a metal bridging layer in the bonding pad area by adopting an evaporation or sputtering mode, wherein the metal bridging layer comprises a first bridging layer and a second bridging layer, the first bridging layer is electrically connected with the bonding pad of the first electrode, and the second bridging layer is electrically connected with the bonding pad of the second electrode;
e) connecting all the first bridging layers together and leading out in an evaporation or sputtering mode to form a first welding spot area, and leading out the second bridging layers independently in an evaporation or sputtering mode to form a second welding spot area;
f) the pin positions of the first welding point area and the second welding point area are arranged at the edge of the integrated micro LED chip or the edge intersection;
g) and depositing metal layers on the first welding spot area and the second welding spot area to form electrode pins, performing glue pouring packaging on the surface of the whole integrated micro LED chip, and exposing the electrode pins of the first welding spot area and the second welding spot area to form packaging pins.
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