CN105911766A - Quantum dot light-emitting device, backlight module and liquid crystal display device - Google Patents
Quantum dot light-emitting device, backlight module and liquid crystal display device Download PDFInfo
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- CN105911766A CN105911766A CN201610425664.1A CN201610425664A CN105911766A CN 105911766 A CN105911766 A CN 105911766A CN 201610425664 A CN201610425664 A CN 201610425664A CN 105911766 A CN105911766 A CN 105911766A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
Abstract
The invention provides a quantum dot light-emitting device, a backlight module and a liquid crystal display device. The quantum dot light-emitting device comprises a light-emitting device body used for generating first-wavelength excitation light, a second quantum dot packaging layer used for absorbing the first-wavelength excitation light to generate second-wavelength conversion light, and a third quantum dot packaging layer used for absorbing the first-wavelength excitation light to generate third-wavelength conversion light. The second quantum dot packaging layer is located between the light-emitting device body and the third quantum dot packaging layer, and the third wavelength is smaller than the second wavelength and larger than the first wavelength so that the excitation light conversion efficiency of a quantum dot material can be improved.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of quantum dot light emitting device, backlight module and liquid crystal indicator.
Background technology
Liquid crystal indicator is made up of liquid crystal panel, institutional framework, optics and some circuit boards etc..Owing to liquid crystal itself is the most luminous, need to configure some backlights and just can demonstrate picture.Wherein, backlight module, for providing brightness and the backlight being evenly distributed for liquid crystal indicator, makes liquid crystal indicator can show picture normally.
In order to realize high colour gamut backlight, use technology of quantum dots can realize the high colour gamut backlight of 100% and above NTSC.Wherein, quantum dot is 10nm and less semiconductor nanocrystal, quantum limitation effect can be produced, the light more higher than phosphor emission is launched in the wave-length coverage that quantum dot can be narrower, even if under identical material under case of quantum dots, quantum dot can launch the light of different wave length according to particle size, along with the reduction of quantum dot size, quantum dot can launch short-wavelength light, such that it is able to obtain required wavelength light by the particle size adjusting quantum dot.
BLUE LED emissions chip emission blue light excitation quantum point material is used to produce white scheme in the related.Fig. 1 a is the structural representation of quantum dot light emitting light source in correlation technique one, as shown in Figure 1a, quantum dot light emitting light source 100, including: blue LED die 130 is arranged in PCB printed board, encapsulation matrix 120 is by being bonded in PCB printed board formation groove-like, and wherein, LED chip is in the center of groove base plate, encapsulation matrix 120 bottom arranges quantum dot layer 110, and quantum layer 110 is formed by encapsulation quanta point material between layer glass.Lost efficacy to prevent quanta point material from meeting high temperature (more than 70 degree), and between quantum dot layer 110 and blue LED die, thermal insulation layer will be set, such as: insulation material layer, or retain the air layer of certain distance.
Fig. 1 b is the structural representation of quantum dot light emitting light source in correlation technique two, as shown in Figure 1 b, quantum dot light emitting light source 200, including: the blue LED die 201 on circuit board is set, even smooth parts 203, wherein, even smooth parts 203 can be with arbitrary or combiners such as light guide plate, diffuser plate, blooming pieces, quantum dot encapsulated layer 202, wherein, packaged water oxygen barrier layer (not shown) on quantum dot encapsulated layer 202 outer surface.
Inventor finds during stating correlation technique on the implementation that at least there are the following problems:
As Fig. 1 a and Fig. 1 b understands, use BLUE LED emissions chip to produce excitation blue light, red green quanta point material in booster dose sublayer, become white light with through blue light producing red green conversion light.Wherein, red green quanta point material mixes and is encapsulated in quantum dot layer.Fig. 1 c is different size quantum dot absorption spectrum and excitation spectrum schematic diagram, as illustrated in figure 1 c, according to preservation of energy, the high-octane low-energy photon of photon deexcitation produces conversion light, wherein, photon energy E=h*v,
H is a constant, and v is the inverse of wavelength, and so, the energy of the shortest single photon of wavelength is the highest, excites ability the strongest, say, that the quantum dot that particle diameter is the biggest, and the optical wavelength produced that is stimulated is the longest, and energy is the lowest, and the wave-length coverage of absorbable spectrum is the biggest.
Continue to learn such as Fig. 1 c, the wave-length coverage of absorption spectrum: red quantum point material > green quanta point material > blue quanta point material, so, the absorption spectrum of red quantum point material is the widest, and after green quantum dot absorption blue light excites generation green glow, a part of green glow continues the conversion of excitated red quantum dot double absorption, wherein, transformation process all can bring certain optical energy loss every time, so, can reduce the final light extraction efficiency of quantum dot layer.
Summary of the invention
The present invention provides a kind of quantum dot light emitting device, backlight module and liquid crystal indicator, to improve the exciting light conversion efficiency of quanta point material.
First aspect, the present invention provides a kind of quantum dot light emitting device, including:
Light-emitting device, is used for producing first wave length excitation light；
Second quantum dot encapsulated layer, is used for absorbing described first wave length excitation light and producing second wave length conversion light；
3rd quantum dot encapsulated layer, is used for absorbing described first wave length excitation light and producing the 3rd wavelength convert light；
Wherein, described second quantum dot encapsulated layer is between described light-emitting device and described 3rd quantum dot encapsulated layer, and described 3rd wavelength is less than described second wave length and more than described first wave length.
Second aspect, the present invention also provides for a kind of backlight module, including above-mentioned quantum dot light emitting device as backlight.
The third aspect, the present invention provides again a kind of liquid crystal indicator, including: backlight module and display panels, described display floater is arranged at above described backlight module, and wherein, described backlight module includes aforesaid quantum dot light emitting device.
nullThe quantum dot light source device provided in the embodiment of the present invention、In backlight module and liquid crystal indicator，By quanta point material layering encapsulation,And the longer second quanta point material layer of converting light wavelength will be produced between the 3rd quanta point material layer and the light-emitting device that Wavelength-converting is shorter,So,Exciting light first excites the second quanta point material to produce second wave length conversion light,Then,Second wave length conversion light and fractional transmission exciting light are through the 3rd quanta point material layer,3rd quanta point material only absorbs the high exciting light of energy and is converted to the 3rd light wavelength conversion,And the second wave length conversion light that energy is low can not be absorbed,So second wave length conversion light is directly transmitted through the 3rd quanta point material layer,Therefore,Decrease correlation technique the second quanta point material double absorption the 3rd light wavelength conversion generation two times transfer,Thus reduce the conversion times of exciting light,Improve the absorption exciting light conversion efficiency of quanta point material.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in describing below is some embodiments of the present invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 a is the structural representation of quantum dot light emitting light source in correlation technique one；
Fig. 1 b is the structural representation of quantum dot light emitting light source in correlation technique two；
Fig. 1 c is different size quantum dot absorption spectrum and excitation spectrum schematic diagram；
Fig. 2 provides the structural representation of a kind of quantum dot light emitting device for the embodiment of the present invention one；
Fig. 2 a is the light schematic diagram of quantum dot light emitting device in Fig. 2；
Fig. 3 provides the structural representation of the variation of quantum dot light emitting device in Fig. 2 embodiment one；
Fig. 3 a is the light schematic diagram of quantum dot light emitting device in Fig. 3;
Fig. 3 b is dichroism film light transmission features schematic diagram;
Fig. 4 provides a kind of package structure schematic diagram for the embodiment of the present invention two for quantum dot light emitting device in embodiment one;
Fig. 4 a is the schematic diagram of the variation of quantum dot light emitting device package structure in Fig. 4;
Fig. 5 is for providing again a kind of quantum dot light emitting device package structure schematic diagram in the embodiment of the present invention three;
Fig. 5 a is the schematic diagram of the variation of quantum dot light emitting device package structure in Fig. 5;
Fig. 6 provides the structural representation of a kind of liquid crystal display for the present embodiment four.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
nullInventor finds that each transformation process can bring certain luminous energy to convert loss,And then in order to improve the light energy use efficiency of quanta point material，Resolving ideas of the present invention is by red quantum point material and green quantum dot layers of material encapsulation,And red quantum point material layer is between green quanta point material layer and blue excitation light source,So,Blue excitation light first excitated red quanta point material produces red conversion light,Then,Red conversion light and fractional transmission blueness are through green quanta point material layer,Green quanta point material only absorbs the higher blue light of luminous energy and is converted to green glow,And the red light that energy is low can not be absorbed,So red light is directly transmitted through green quanta point material layer,Therefore,Decrease red quantum point material secondary in correlation technique and absorb the two times transfer of green conversion light,Thus reduce the conversion times of quanta point material,Improve the light conversion efficiency of quanta point material.
Embodiment one:
Fig. 2 provides the structural representation of a kind of quantum dot light emitting device for the embodiment of the present invention one, as shown in Figure 2, quantum dot light emitting device 300, including: light-emitting device 301, second quantum dot encapsulated layer 302 and the 3rd quantum dot encapsulated layer 303, light-emitting device 301 produces first wave length excitation light, second quantum dot encapsulated layer 302, light is encouraged to produce second wave length conversion light for absorbing first wave length, 3rd quantum dot encapsulated layer 303, light is encouraged to produce the 3rd wavelength convert light for absorbing first wave length, second quantum dot encapsulated layer 302 is between light-emitting device 301 and the 3rd quantum dot encapsulated layer 303, wherein, 3rd wavelength is less than second wave length and more than first wave length.
Example, light-emitting device 301 can be blue LED (LED) chip, such as: the LED chip based on GaN of blue light is launched in application.Can also purple or UV LED (LED) chip.Second quantum dot encapsulated layer 302 encapsulates red quantum point material, and second wave length is red spectral band, and the 3rd quantum dot encapsulated layer 303 encapsulates green quanta point material, and the 3rd wavelength is green light band.
nullFig. 2 a is the light schematic diagram of quantum dot light emitting device in Fig. 2，As shown in Figure 2 a，Light-emitting device 301 sends first wave length blue light b，A part of blue light bj excites red quantum point material in the second quantum dot encapsulated layer 302 to produce the red conversion light rj of second wave length，Another part blue light bi and red conversion light rj is transmitted through the second quantum dot encapsulated layer 302 to the 3rd quantum dot encapsulated layer 303，Wherein，Red conversion light rj is no longer absorbed by the green quantum dot in the 3rd quantum dot encapsulated layer 303，And directly transmit the 3rd quantum dot encapsulated layer 303，The blue light bi part being transmitted through the 3rd quantum dot encapsulated layer 303 continues to excite green quanta point material to produce green conversion light gi，Blue light bi another part bi1 is directed through the 3rd quantum dot encapsulated layer 303，So，Blue light bi1 forms white light source with green glow conversion gi and red conversion light rj mixed light.Wherein, red conversion light rj will not produced conversion light by green quantum dot absorbed through the 3rd quantum dot encapsulated layer 303.
Understand with continued reference to Fig. 2 a, in the green conversion light gi that blue light bi excites the 3rd quantum dot encapsulated layer 303 to produce, a part green forward direction conversion light gi1 directly transmits the 3rd quantum dot encapsulated layer 303, owing to no longer having the red quantum point material less than bulky grain size in green forward direction conversion light gi1 transmission path, green forward direction conversion light gi1 will not be absorbed and occur again to change, and due to red and green quantum dot material mixing encapsulation in prior art, green forward direction conversion light gi1 will necessarily run into oarse-grained red quantum point material, absorbed and changed light redness, therefore, in the present embodiment, at least avoided that green forward direction conversion light gi1 is occurred two times transfer by red quantum point absorbed, improve blue light conversion efficiency.
The further lot of experiment validation of inventor finds, to conversion light gi2 after in green conversion light gi, some is close to 50%, retroeflection is in the second quantum dot encapsulated layer 302, and the most excitated red quanta point material produces red conversion light rj2, therefore, although avoiding a part green forward direction conversion light gi1 two times transfer problem, but, some backward conversion light gi2 still can occur two times transfer to excite problem.
Still there is a part of backward conversion light gi2 to improve further two times transfer problem can occur, Fig. 3 provides the structural representation of the variation of quantum dot light emitting device in Fig. 2 embodiment one, as shown in Figure 3, this variation is unlike embodiment one, quantum dot light emitting device 400 is also provided with dichroic parts 404 between the second quantum dot encapsulated layer 402 and the 3rd quantum dot encapsulated layer 403, dichroic parts 404 are for transmission first wave length light and second wave length light, and reflect the 3rd wavelength light.
Dichroic parts 404 concrete structure form can be with transparence film like, such as: dichroism film, can arrange clear coat at the incidence surface of the second quantum dot encapsulated layer 402 exiting surface or the 3rd quantum dot encapsulated layer 403.
This variation does not repeats them here with embodiment one same section.
Fig. 3 a is the light schematic diagram of quantum dot light emitting device in Fig. 3, as shown in Figure 3 a, unlike Fig. 2 a, to conversion light gi2 after a part in green conversion light gi, after being reflected by dichroic parts 404 in reflection process backward, from the 3rd quantum dot encapsulated layer 403 front outgoing, wherein, dichroic parts 404 are absorbed by red quantum point for bis-times to conversion light gi2 after preventing green glow, further increase raising blue light conversion efficiency.
Fig. 3 b is dichroism film light transmission features schematic diagram, and as shown in Figure 3 b, dichroism film is by the light of its all band, reflection green wave band light outside green light band.As: green band light percent of pass is close to 0%, and other wave band light percent of pass are close to 100%..
Embodiment two:
Fig. 4 provides a kind of package structure schematic diagram for the embodiment of the present invention two for quantum dot light emitting device in embodiment one, as shown in Figure 3, a kind of quantum dot light emitting device packaging part 50, can be used as light source, backlight in backlight module, can be used alone as using into a kind of lighting source, including:
Circuit board 51, cloth is set to quantum dot light emitting device packaging part 50 provides power circuit.
Light-emitting device 52, arranges on circuit board 51, produces first wave length excitation light.Wherein, light-emitting device 52 can be light emitting diode (LED) chip, such as: the LED chip based on GaN of blue light is launched in application.
Second quantum dot encapsulated layer 53, is used for absorbing first wave length excitation light and producing second wave length conversion light.
3rd quantum dot encapsulated layer 54, is used for absorbing first wave length excitation light and producing the 3rd wavelength convert light.
Wherein, second quantum dot encapsulated layer 53 and the 3rd quantum dot encapsulated layer 54 are connected with circuit board 51, it is respectively formed at the periphery of light-emitting device 52, and second quantum dot encapsulated layer 53 be formed between the 3rd quantum dot encapsulated layer 54 and light-emitting device 52, and second quantum dot encapsulated layer 53 and the 3rd quantum dot encapsulated layer 54 surfaces externally and internally form cambered surface respectively, wherein, outwardly outer surface is exiting surface, being concave surface relative to the inner surface of outer surface, inner surface is incidence surface.
Wherein, second quantum dot encapsulated layer 53 and the 3rd quantum dot encapsulated layer 54 can use silica gel and quantum dot particles to mix, quantum dot can be the semiconductor nanocrystal of a diameter of 1nm to 10nm, quantum limitation effect can be shown, as: nanocrystal based on Si, II-VI compound semiconductor nanocrystal, III-V compound semiconductor nanocrystal, and the nanocrystal such as group Ⅳ-Ⅵ compound semiconductor nanocrystal, the present embodiment can be used alone or in combination aforesaid quantum dot.
Seal member 55, is formed on the outer surface of the 3rd quantum dot encapsulated layer 54, to seal the 3rd quantum dot encapsulated layer 54.Concrete, seal member 55 is one layer of water oxygen barrier layer, and this water oxygen barrier layer can be SiO2 thin film, Si3N4 thin film or SiON thin film, it is also possible to prepares the thin layers such as Al2O3 or V2O5 as water oxygen barrier layer by physical vaporous deposition or atomic layer deposition method.
In order to prevent quanta point material by thermal failure, between the second quantum dot encapsulated layer 53 and light-emitting device 52, surface beeline is more than 3mm.Being shown by great many of experiments, when distance is more than 3mm, the average heat of light-emitting device 52 does not results in quantum dot particles and lost efficacy.Preferably, the minimal surface distance between light-emitting device 52 and the second quantum dot encapsulated layer 53 is more than 3mm and less than 10mm, so favourable quantum dot light emitting device packaging part Miniaturization Design.
In order to reduce quanta point material local heating further and Problem of Failure, the inner surface side of the close light-emitting device of the second quantum dot encapsulated layer 53 is formed with diffusion particle layer, and diffusion particle layer comprises diffusion particle has diffusion to light.The first wave length excitation light sent from light-emitting device 52, the diffusion of diffusion particle in diffusion particle layer, expand the dispersion angle of excitation light, it is to avoid cause local quantum dot material at high temperature to lose efficacy due to excitation line light intensity concentrations.
Further experiment shows, although distance is more than 3mm, the average heat of light-emitting device does not results in quantum dot particles and lost efficacy, but, if the light that light source sends excessively is concentrated, local energy can make the most greatly local quantum dot cause the Problem of Failure damaged and cause, therefore, the present embodiment arranges on the second quantum dot encapsulated layer 53 inner surface side diffusion particle layer, uniform light diffusion will be concentrated, the energy making light will not excessively concentrate on local, to prevent local quantity point overheated and Damage and Failure.
In the present embodiment, drawn by great many of experiments, on the basis of the Miniaturization Design achieving quantum dot light emitting device packaging part 500, diffusion particle layer is set again, also avoid causing quantum dot high temperature failure problem due to the heat radiation of miniaturization local.
Further, Fig. 4 a is the schematic diagram of the variation of quantum dot light emitting device package structure in Fig. 4, as shown in fig. 4 a, is provided with dichroic parts 56 between the second quantum dot encapsulated layer 53 and the 3rd quantum dot encapsulated layer 54, referring in particular to embodiment one, do not repeat them here.
Embodiment three:
Fig. 5 is for providing again a kind of quantum dot light emitting device package structure schematic diagram in the embodiment of the present invention three, as it is shown in figure 5, a kind of quantum dot light emitting device packaging part 60, can be used as light source, backlight in backlight module, can be used alone as using into a kind of lighting source.
Quantum dot light emitting device packaging part 60 includes:
Encapsulation matrix 62, forms groove-like.
Light-emitting device 61, arranges on encapsulation matrix 62 bottom portion of groove, produces first wave length excitation light.Wherein, light-emitting device 61 can be light emitting diode (LED) chip, such as: the LED chip based on GaN of blue light is launched in application.
Second quantum dot encapsulated layer 63, is used for absorbing first wave length excitation light and producing second wave length conversion light.
3rd quantum dot encapsulated layer 64, is used for absorbing first wave length excitation light and producing the 3rd wavelength convert light.
Wherein, the second quantum dot encapsulated layer 63 and the 3rd quantum dot encapsulated layer 64 are respectively formed in slot opening portion, and the second quantum dot encapsulated layer 63 is formed between the 3rd quantum dot encapsulated layer 64 and light-emitting device 61.Unlike embodiment two, in the present embodiment three, the exiting surface of the second quantum dot encapsulated layer 63 and the 3rd quantum dot encapsulated layer 64 is plane.In alternatively possible embodiment, the surface of the second quantum dot encapsulated layer 63 and the 3rd quantum dot encapsulated layer 64 can be cabochon.
Identical with embodiment two is, second quantum dot encapsulated layer 63 and the 3rd quantum dot encapsulated layer 64 can use silica gel and quantum dot particles to mix, quantum dot can be the semiconductor nanocrystal of a diameter of 1nm to 10nm, quantum limitation effect can be shown, as: nanocrystal based on Si, II-VI compound semiconductor nanocrystal, III-V compound semiconductor nanocrystal, and the nanocrystal such as group Ⅳ-Ⅵ compound semiconductor nanocrystal, the present embodiment can be used alone or in combination aforesaid quantum dot.
Seal member 65, is formed on the upper surface of the 3rd quantum dot encapsulated layer 64, to seal the 3rd quantum dot encapsulated layer 64.Concrete, seal member 65 is one layer of water oxygen barrier layer, and this water oxygen barrier layer can be SiO2 thin film, Si3N4 thin film or SiON thin film, it is also possible to prepares the thin layers such as Al2O3 or V2O5 as water oxygen barrier layer by physical vaporous deposition or atomic layer deposition method.
Identical with embodiment two, in order to prevent quanta point material by thermal failure, between the second quantum dot encapsulated layer 63 and light-emitting device 61, surface beeline is more than 3mm.Preferably, the minimal surface distance between light-emitting device 61 and the second quantum dot encapsulated layer 63 is more than 3mm and less than 10mm.In the present embodiment three, in order to reduce quanta point material local heating further and Problem of Failure and centre position blueness light intensity are relatively big and cause centre position colour cast problem, the inner surface side of the second quantum dot encapsulated layer 63 is formed with diffusion particle layer, and diffusion particle layer comprises diffusion particle has diffusion to light.The first wave length excitation light sent from light-emitting device 61, the diffusion of diffusion particle in diffusion particle layer, expand the dispersion angle of excitation light, make excitation light more uniform, avoid causing due to excitation line light intensity concentrations local quantum dot material at high temperature to lose efficacy, and prevent the colour cast problem due to blue light intensity concentrations centre position.
Further, Fig. 5 a is the schematic diagram of the variation of quantum dot light emitting device package structure in Fig. 5, as shown in Figure 5 a, is provided with dichroic parts 66 between the second quantum dot encapsulated layer 63 and the 3rd quantum dot encapsulated layer 64, referring in particular to embodiment one, do not repeat them here.
Embodiment four:
The embodiment of the present invention four also provides for a kind of backlight module, including:
Such as quantum dot light emitting device arbitrary in embodiment one to three.Concrete, using quantum dot light emitting device as the backlight of backlight module, those skilled in the art can refer to back light module unit structure in prior art and realize.
Embodiment five:
The embodiment of the present invention five also provides for a kind of liquid crystal indicator, including:
Fig. 6 provides the structural representation of a kind of liquid crystal indicator for the present embodiment four, as shown in Figure 6, the liquid crystal indicator 500 of the present embodiment includes: include shell 501, display panels 502 and backlight module 503, wherein, backlight module 503 can use backlight module in embodiment four, and here is omitted.Wherein, shell 501 can include fore shell and back cover.
At some in other possible implementations, shell 501 can omit, and the outward appearance function of shell 501 is integrated on backlight module 503.
In actual applications, display panels can be thin film transistor LCD device (Liquid Crystal Display is called for short LCD).
Last it is noted that various embodiments above is only in order to illustrate technical scheme, it is not intended to limit；Although the present invention being described in detail with reference to foregoing embodiments, it will be understood by those within the art that: the technical scheme described in foregoing embodiments still can be modified by it, or the most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a quantum dot light emitting device, it is characterised in that including:
Light-emitting device, is used for producing first wave length excitation light；
Second quantum dot encapsulated layer, is used for absorbing described first wave length excitation light and producing second wave length conversion light；
3rd quantum dot encapsulated layer, is used for absorbing described first wave length excitation light and producing the 3rd wavelength convert light；
Wherein, described second quantum dot encapsulated layer is between described light-emitting device and described 3rd quantum dot encapsulated layer, and described 3rd wavelength is less than described second wave length and more than described first wave length.
Quantum dot light emitting device the most according to claim 1, it is characterised in that between described second quantum dot encapsulated layer and described light-emitting device, surface beeline is more than 3mm.
3. according to the arbitrary described quantum dot light emitting device of claim 1-2, it is characterised in that be formed with diffusion particle layer at described second quantum dot encapsulated layer near described light-emitting device side.
Quantum dot light emitting device the most according to claim 3, it is characterized in that, the surfaces externally and internally of described second quantum dot encapsulated layer and described 3rd quantum dot encapsulated layer forms cambered surface respectively, wherein, outwardly outer surface is exiting surface, being concave surface relative to the inner surface of described outer surface, described inner surface is incidence surface.
Quantum dot light emitting device the most according to claim 4, it is characterised in that also include that circuit board, described light-emitting device are arranged on described circuit board；
And described second quantum dot encapsulated layer and described 3rd quantum dot encapsulated layer are connected with described circuit board, and it is respectively formed at the periphery of described light-emitting device.
Quantum dot light emitting device the most according to claim 3, it is characterised in that also include:
Encapsulation matrix, forms groove-like, and described light-emitting device is arranged on the bottom portion of groove of described encapsulation matrix；
Wherein, described second quantum dot encapsulated layer and described 3rd quantum dot encapsulated layer are respectively formed in slot opening portion.
Quantum dot light emitting device the most according to claim 6, it is characterised in that the exiting surface of described second quantum dot encapsulated layer and described 3rd quantum dot encapsulated layer is the most plane.
Quantum dot light emitting device the most according to claim 3, it is characterised in that also include:
Seal member, is formed on the outer surface of described 3rd quantum dot encapsulated layer, to seal described 3rd quantum dot encapsulated layer.
9. a backlight module, it is characterised in that including: include the claim 1-8 arbitrary described quantum dot light emitting device backlight as this backlight module.
10. a liquid crystal indicator, it is characterised in that including:
Backlight module and display panels, described display floater is arranged at above described backlight module, and wherein, described backlight module includes backlight module described in claim 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610425664.1A CN105911766A (en) | 2016-06-16 | 2016-06-16 | Quantum dot light-emitting device, backlight module and liquid crystal display device |
| US15/351,981 US10203547B2 (en) | 2016-06-16 | 2016-11-15 | Quantum dot light emitting device, backlight module, and liquid crystal display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610425664.1A CN105911766A (en) | 2016-06-16 | 2016-06-16 | Quantum dot light-emitting device, backlight module and liquid crystal display device |
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| CN105911766A true CN105911766A (en) | 2016-08-31 |
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| CN106597741A (en) * | 2016-12-23 | 2017-04-26 | 青岛海信电器股份有限公司 | Direct type backlight module and liquid crystal display device |
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