CN109245082A - Two-way switch circuit that is a kind of anti-reverse and inhibiting power-on surge current - Google Patents
Two-way switch circuit that is a kind of anti-reverse and inhibiting power-on surge current Download PDFInfo
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- CN109245082A CN109245082A CN201811201632.9A CN201811201632A CN109245082A CN 109245082 A CN109245082 A CN 109245082A CN 201811201632 A CN201811201632 A CN 201811201632A CN 109245082 A CN109245082 A CN 109245082A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/005—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection avoiding undesired transient conditions
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The invention discloses two-way switch circuits that is a kind of anti-reverse and inhibiting power-on surge current, including delay circuit, driving circuit, switching device and anti-reverse and inhibition surge circuit；The output end of the delay circuit is connected with the input terminal of driving circuit, and the output end of the driving circuit is connected with switching device, and described anti-reverse and inhibition surge circuit is connected in parallel with switching device.The present invention is combined togather surge current suppression circuit and reverse-connection preventing circuit.Scheme of the electromagnetic relay selected in compared with the prior art as switch element, with small in size, the simple and reliable feature of driving circuit, compared with using scheme of the on state to inhibit surge current by controlling metal-oxide-semiconductor, since the dissipated power of metal-oxide-semiconductor is limited, the present invention be more suitable for middle large-power occasions, and do not need accurately to control the on state of metal-oxide-semiconductor.
Description
Technical field
The present invention relates to electronic circuit fields, more particularly to two-way switch that is a kind of anti-reverse and inhibiting power-on surge current
Circuit.
Background technique
The surge restraint circuit of band input counnter attack connection function in the prior art uses following circuit structure: input is anti-reverse
And its power-on surge current suppression circuit is powered by DC/DC accessory power supply to it, is prolonged by the actuation of RC delay circuit relay
When the time, before relay is not attracted, by diode and current-limiting resistance prevent reversal connection and surge current, principal current passes through after actuation
Relay circulation.Circuit is realized by relay, Zener diode, LM431, PNP triode, diode, resistance, capacitor etc..
However the defect of said switching circuit is to need independent accessory power supply, circuit selects electromagnetic relay as switch element, volume
Greatly.In addition the adjusting of the internal resistance size using the work of mos pipe at variable resistance area between drain-source carries out wave in the prior art
Electric current inhibition is gushed, the dissipated power of one side mos pipe is limited, is not suitable for large-power occasions.On the other hand to the essence of mos pipe internal resistance
Really control is not easy to realize, is easy damage mos pipe.It is special to obtain preferable dynamic in the secondary power supply design of middle grand duke's power
Property and reduce EMI and generally require biggish input capacitance, and the equivalent internal resistance ESR of capacitor is generally milliohm grade, in primary power source
The moment powered on can generate the surge current of hundreds of amperes, it is more likely that will cause the damage of secondary power supply.So to booting wave
It is very necessary for gushing the inhibition of electric current.For direct-current input power supplying, it is polarized that input capacitance, which is generally electrolytic capacitor, when accidentally
Operation power can cause irreversible to damage secondary power supply when being reversely connected.
Summary of the invention
According to problem of the existing technology, the invention discloses a kind of anti-reverse and inhibition power-on surge current dual-purpose
Switching circuit, including delay circuit, driving circuit, switching device and anti-reverse and inhibition surge circuit；The delay circuit
Output end is connected with the input terminal of driving circuit, and the output end of the driving circuit is connected with switching device, the counnter attack
It connects and surge circuit is inhibited to be connected in parallel with switching device；
Under working condition: when power supply is connected, switching device is not turned on, and power supply is by anti-reverse and inhibition surge circuit to rear
Terminal circuit input storage capacitor charges, and described anti-reverse and inhibition surge circuit string is provided with resistance, leads to power input
Surge current will not be generated on circuit, delay circuit triggers after the voltage on back-end circuit input storage capacitor reaches certain value
Driving switch break-over of device, at this moment anti-reverse and inhibition surge circuit is shorted out, lowers loss by switching device, the electricity of energy storage at this time
There is certain voltage grade in appearance, has made surge current within an acceptable range.
The delay circuit includes bleeder circuit and RC delay circuit, and the bleeder circuit includes the resistance R1 being connected in series
With resistance R2, the driving circuit includes NPN type triode Q1 and current-limiting resistance R4, and the switching device includes enhanced MOS
Pipe Q2 and enhanced metal-oxide-semiconductor Q3, described anti-reverse and inhibition surge circuit includes power resistor R5 and diode D1；
The RC delay circuit includes that resistance R3 and capacitor C2, the resistance R3 and capacitor C2 are connected in series, the resistance
One end of R3 is connected with the partial pressure midpoint of resistance R1 and resistance R2, the base terminal and capacitor C2 of the other end and NPN triode Q1
One end be connected, the other end and enhanced metal-oxide-semiconductor Q2 and enhanced metal-oxide-semiconductor of the other end of the resistance R2 and capacitor C2
The source electrode of Q3 is connected, and one end of the resistance R4 is connected with power anode, the other end is connected with the collector of NPN triode Q1
It connects, the emitter of the NPN triode Q1 is connected with the grid of the grid of enhanced metal-oxide-semiconductor Q2 and enhanced metal-oxide-semiconductor Q3, institute
The source electrode for stating enhanced metal-oxide-semiconductor Q2 is connected with the source electrode of enhanced metal-oxide-semiconductor Q3, the drain electrode of the enhanced metal-oxide-semiconductor Q2 and electricity
Source cathode one end is connected, and the drain electrode of the enhanced metal-oxide-semiconductor Q3 is connected with load cathode one end, the yin of the diode D1
Pole is connected with the drain electrode of enhanced metal-oxide-semiconductor Q2, and the anode of the diode D1 is through power resistor R5's and enhanced metal-oxide-semiconductor Q3
Drain electrode is connected.
By adopting the above-described technical solution, one kind provided by the invention is anti-reverse and inhibits the dual-purpose of power-on surge current
Switching circuit, the circuit can effectively inhibit surge current while anti-reverse, the MOSFET that switching device is selected, in conducting
Resistance is milliohm grade, and circuit efficiency can be improved.Have the characteristics that small in size and driving current is small compared to relay；In addition circuit letter
Single practical, resistance, capacitor and triode independence original part are only used in delay, driving circuit, and surge circuit is inhibited to inhibit using resistance
Rather than the on state of metal-oxide-semiconductor is relied on to carry out current limliting, the problem that metal-oxide-semiconductor is easy to damage is not only avoided, and keep this protection circuit suitable
For middle large-power occasions.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in application, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is the anti-reverse two-way switch circuit diagram with inhibition power-on surge current of the present invention；
Fig. 2 is the embodiment schematic diagram of two-way switch circuit of the present invention；
Fig. 3 does not add experimental circuit before anti-reverse and inhibition in-rush current limiting circuit；
Fig. 4 does not add experimental waveform before anti-reverse and inhibition in-rush current limiting circuit；
Fig. 5 adds experimental circuit after anti-reverse and inhibition in-rush current limiting circuit；
Fig. 6 adds experimental waveform after anti-reverse and inhibition in-rush current limiting circuit；
Fig. 7 is reversely connected experimental waveform.
Specific embodiment
To keep technical solution of the present invention and advantage clearer, with reference to the attached drawing in the embodiment of the present invention, to this
Technical solution in inventive embodiments carries out clear and complete description:
One kind as shown in FIG. 1 to FIG. 3 is anti-reverse and inhibits the two-way switch circuit of power-on surge current, delay circuit, drive
Dynamic circuit, switching device and anti-reverse and inhibition surge circuit；The output end of the delay circuit and the input terminal of driving circuit
It is connected, the output end of the driving circuit is connected with switching device, described anti-reverse and inhibition surge circuit and derailing switch
Part is connected in parallel.When power supply is connected, switching device is not turned on, and power supply is defeated to back-end circuit by anti-reverse and inhibition surge circuit
Enter storage capacitor C1 to charge, due to anti-reverse and surge circuit string is inhibited to have resistance, the surge current that will not generate, when
Voltage on back-end circuit input storage capacitor C1 reaches delay circuit triggering driving switch break-over of device after certain value, at this moment opens
It closes device to be shorted out anti-reverse and inhibition surge circuit, lowers loss.There is certain voltage grade on capacitor C1 at this time, has made
Surge current is within an acceptable range.
The delay circuit includes bleeder circuit and RC delay circuit, and the bleeder circuit includes the resistance R1 being connected in series
With resistance R2, the driving circuit includes NPN type triode Q1 and current-limiting resistance R4, and the switching device includes enhanced MOS
Pipe Q2 and enhanced metal-oxide-semiconductor Q3, described anti-reverse and inhibition surge circuit includes power resistor R5 and diode D1；The RC prolongs
When circuit include that resistance R3 and capacitor C2, the resistance R3 and capacitor C2 are connected in series, one end of the resistance R3 and resistance R1
It is connected with the partial pressure midpoint of resistance R2, the other end is connected with one end of the base terminal of NPN triode Q1 and capacitor C2, described
The other end of resistance R2 and the other end of capacitor C2 are connected with the source electrode of enhanced metal-oxide-semiconductor Q2 and enhanced metal-oxide-semiconductor Q3, institute
The one end for stating resistance R4 is connected with power anode, the other end is connected with the collector of NPN triode Q1, the NPN triode
The emitter of Q1 is connected with the grid of the grid of enhanced metal-oxide-semiconductor Q2 and enhanced metal-oxide-semiconductor Q3, the enhanced metal-oxide-semiconductor Q2
Source electrode be connected with the source electrode of enhanced metal-oxide-semiconductor Q3, the drain electrode of the enhanced metal-oxide-semiconductor Q2 is connected with power cathode one end
It connects, the drain electrode of the enhanced metal-oxide-semiconductor Q3 is connected with load cathode one end, the cathode and enhanced MOS of the diode D1
The drain electrode of pipe Q2 is connected, and the anode of the diode D1 is connected through power resistor R5 with the drain electrode of enhanced metal-oxide-semiconductor Q3.
When reversal connection due to diode D1 and enhanced metal-oxide-semiconductor Q2 parasitic diode presence, no input channel realizes anti-
It is reversely connected function.When input just connects, resistance R1 and resistance R2 are divider resistance, and partial pressure value determines driving voltage value after stable state, point
It is charged by the parasitic diode circuit of resistance R3, enhanced metal-oxide-semiconductor Q2 to capacitor C2 after pressure, R3 and capacitor C2 constitute RC delay
Circuit.When the voltage on capacitor C2 was charged in threshold voltage this period, due to the side of the parasitic diode of enhanced metal-oxide-semiconductor Q3
To for reversal connection state, power supply is charged by diode D1 and the circuit current-limiting resistance R5 to capacitor C1, due to the limit of resistance R5
Production is used, and surge current will not be generated.After the voltage on capacitor C2 is charged to threshold voltage, driven by NPN triode Q1
Enhanced metal-oxide-semiconductor Q2, enhanced metal-oxide-semiconductor Q3 conducting, have had certain voltage grade on capacitor C1 at this time, make surge current can
Receive in range.Diode D1 and resistance R5 is short-circuited simultaneously, lowers circuit loss.Enhanced metal-oxide-semiconductor Q2, enhanced metal-oxide-semiconductor
And substrate enhanced using N-channel is connected Q3 with source electrode in this application, and the metal-oxide-semiconductor of other forms can also be used.
It is worth noting that enhanced metal-oxide-semiconductor Q2's and enhanced metal-oxide-semiconductor Q3 is used in series the pressure resistance that can increase metal-oxide-semiconductor
Range；The reference end of delay circuit and driving circuit is connected with the source electrode of enhanced metal-oxide-semiconductor Q2, enhanced metal-oxide-semiconductor Q3, guarantees to drive
The stabilization of dynamic voltage gate source voltage；NPN triode Q1 metal-oxide-semiconductor substitution also may be used.
Preferably to show circuit actual effect, it is contemplated that the inconvenience that actual circuit measures node current, Wo Menyong
Saber circuit simulating software has carried out emulation experiment to circuit, and Fig. 3 and Fig. 5 are unprotected circuit respectively and have a protection circuit
Simulating schematic diagram, secondary power supply are set as the Buck circuit of a 220W.Input voltage is 70V, and front end capacitor's capacity is
2000uF, equivalent internal resistance ESR are 150m Ω.
Fig. 4 is not plus experimental waveform, input current i (in), Buck inductance are electric before anti-reverse and inhibition in-rush current limiting circuit
It flows i (L) and has overshoot by the electric current i (ds) of Buck switching tube, wherein inrush current peak value reaches 200A or more.And
If this surge current is not inhibited that the damage of secondary power supply may be will cause.
Fig. 6 is to add anti-reverse and inhibit experimental waveform after in-rush current limiting circuit, and input current i (in) has been suppressed to 10A
Within, and Buck inductive current waveform i (L) and by the electric current of Buck switching tube i (ds-buck) without overshoot phenomenon.Circuit exists
Input current mainly passes through diode D1 and current-limiting resistance R5 in the preceding 40mS time, later enhanced metal-oxide-semiconductor Q2 and enhanced MOS
Pipe Q3 is gradually turned on.Diode D1 and current-limiting resistance R5 are short-circuited, and reduce circuit loss.
Fig. 7 is reversal connection experimental waveform, and input current is microampere order when reversal connection, realizes anti-reverse defencive function.
The present invention is combined togather surge current suppression circuit and reverse-connection preventing circuit.It is selected in compared with the prior art
Scheme of the electromagnetic relay as switch element, there is small in size, the simple and reliable feature of driving circuit, and using passing through control
The on state of metal-oxide-semiconductor processed inhibits the scheme of surge current to compare, and since the dissipated power of metal-oxide-semiconductor is limited, the present invention is more suitable
Conjunction and middle large-power occasions, and do not need accurately to control the on state of metal-oxide-semiconductor.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (2)
1. two-way switch circuit that is a kind of anti-reverse and inhibiting power-on surge current, characterized by comprising: delay circuit, driving
Circuit, switching device and anti-reverse and inhibition surge circuit；The input terminal phase of the output end of the delay circuit and driving circuit
Connection, the output end of the driving circuit are connected with switching device, described anti-reverse and inhibition surge circuit and switching device
It is connected in parallel；
Under working condition: when power supply is connected, switching device is not turned on, and power supply is by anti-reverse and inhibition surge circuit to rear end electricity
Road input storage capacitor charges, and described anti-reverse and inhibition surge circuit string is provided with resistance, leads to power input circuit
On will not generate surge current, when back-end circuit input storage capacitor on voltage reach certain value after delay circuit triggering driving
Switch device conductive, at this moment anti-reverse and inhibition surge circuit is shorted out, lowers loss by switching device, at this time on storage capacitor
There is certain voltage grade, has made surge current within an acceptable range.
2. one kind according to claim 1 is anti-reverse and inhibits the two-way switch circuit of power-on surge current, feature is also
Be: the delay circuit includes bleeder circuit and RC delay circuit, the bleeder circuit include the resistance R1 being connected in series and
Resistance R2, the driving circuit include NPN type triode Q1 and current-limiting resistance R4, and the switching device includes enhanced metal-oxide-semiconductor
Q2 and enhanced metal-oxide-semiconductor Q3, described anti-reverse and inhibition surge circuit includes power resistor R5 and diode D1；
The RC delay circuit includes that resistance R3 and capacitor C2, the resistance R3 and capacitor C2 are connected in series, the resistance R3's
One end is connected with the partial pressure midpoint of resistance R1 and resistance R2, the base terminal of the other end and NPN triode Q1 and capacitor C2 one
End is connected, and the other end of the resistance R2 and the other end of capacitor C2 are with enhanced metal-oxide-semiconductor Q2's and enhanced metal-oxide-semiconductor Q3
Source electrode is connected, and one end of the resistance R4 is connected with power anode, the other end is connected with the collector of NPN triode Q1,
The emitter of the NPN triode Q1 is connected with the grid of the grid of enhanced metal-oxide-semiconductor Q2 and enhanced metal-oxide-semiconductor Q3, described
The source electrode of enhanced metal-oxide-semiconductor Q2 is connected with the source electrode of enhanced metal-oxide-semiconductor Q3, the drain electrode of the enhanced metal-oxide-semiconductor Q2 and power supply
Cathode one end is connected, and the drain electrode of the enhanced metal-oxide-semiconductor Q3 is connected with load cathode one end, the cathode of the diode D1
It is connected with the drain electrode of enhanced metal-oxide-semiconductor Q2, leakage of the anode of the diode D1 through power resistor R5 Yu enhanced metal-oxide-semiconductor Q3
Pole is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811201632.9A CN109245082A (en) | 2018-10-16 | 2018-10-16 | Two-way switch circuit that is a kind of anti-reverse and inhibiting power-on surge current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811201632.9A CN109245082A (en) | 2018-10-16 | 2018-10-16 | Two-way switch circuit that is a kind of anti-reverse and inhibiting power-on surge current |
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| CN109245082A true CN109245082A (en) | 2019-01-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811201632.9A Pending CN109245082A (en) | 2018-10-16 | 2018-10-16 | Two-way switch circuit that is a kind of anti-reverse and inhibiting power-on surge current |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109649309A (en) * | 2019-01-31 | 2019-04-19 | 宁德时代新能源科技股份有限公司 | Control system |
| CN110289608A (en) * | 2019-06-27 | 2019-09-27 | 深圳欧陆通电子股份有限公司 | It is a kind of directly to enter the power supply circuit and power supply directly gone out |
| CN110635676A (en) * | 2019-11-05 | 2019-12-31 | 中国船舶重工集团公司第七0五研究所 | Bootstrap type pre-charging slow-starting charging circuit |
| CN116054115A (en) * | 2023-03-31 | 2023-05-02 | 成都新欣神风电子科技有限公司 | Surge voltage suppression and reverse connection prevention circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801137A (en) * | 2011-05-25 | 2012-11-28 | 海洋王照明科技股份有限公司 | Light-emitting diode (LED) short circuit protection circuit and light fitting |
| CN204271638U (en) * | 2014-12-01 | 2015-04-15 | 武汉永力科技股份有限公司 | A kind of direct current inputs circuit that is anti-reverse and start Anti-surging |
| CN205377275U (en) * | 2016-01-12 | 2016-07-06 | 陕西华讯科技有限公司 | Surge current inhibitor |
| CN105762781A (en) * | 2016-04-28 | 2016-07-13 | 昆山龙腾光电有限公司 | Surge current control circuit and power supply device |
-
2018
- 2018-10-16 CN CN201811201632.9A patent/CN109245082A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801137A (en) * | 2011-05-25 | 2012-11-28 | 海洋王照明科技股份有限公司 | Light-emitting diode (LED) short circuit protection circuit and light fitting |
| CN204271638U (en) * | 2014-12-01 | 2015-04-15 | 武汉永力科技股份有限公司 | A kind of direct current inputs circuit that is anti-reverse and start Anti-surging |
| CN205377275U (en) * | 2016-01-12 | 2016-07-06 | 陕西华讯科技有限公司 | Surge current inhibitor |
| CN105762781A (en) * | 2016-04-28 | 2016-07-13 | 昆山龙腾光电有限公司 | Surge current control circuit and power supply device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109649309A (en) * | 2019-01-31 | 2019-04-19 | 宁德时代新能源科技股份有限公司 | Control system |
| US11088553B2 (en) | 2019-01-31 | 2021-08-10 | Contemporary Amperex Technology Co., Limited | Control system |
| CN110289608A (en) * | 2019-06-27 | 2019-09-27 | 深圳欧陆通电子股份有限公司 | It is a kind of directly to enter the power supply circuit and power supply directly gone out |
| CN110289608B (en) * | 2019-06-27 | 2024-03-22 | 深圳欧陆通电子股份有限公司 | Power supply circuit and power supply with direct-in and direct-out function |
| CN110635676A (en) * | 2019-11-05 | 2019-12-31 | 中国船舶重工集团公司第七0五研究所 | Bootstrap type pre-charging slow-starting charging circuit |
| CN116054115A (en) * | 2023-03-31 | 2023-05-02 | 成都新欣神风电子科技有限公司 | Surge voltage suppression and reverse connection prevention circuit |
| CN116054115B (en) * | 2023-03-31 | 2023-10-03 | 成都新欣神风电子科技有限公司 | Surge voltage suppression and reverse connection prevention circuit |
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Application publication date: 20190118 |