CN105762781A - Surge current control circuit and power supply device - Google Patents
Surge current control circuit and power supply device Download PDFInfo
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- CN105762781A CN105762781A CN201610278917.7A CN201610278917A CN105762781A CN 105762781 A CN105762781 A CN 105762781A CN 201610278917 A CN201610278917 A CN 201610278917A CN 105762781 A CN105762781 A CN 105762781A
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- resistance
- electric capacity
- signal input
- surge current
- bipolar transistor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
Abstract
The invention discloses a surge current control circuit, including first, second and third capacitors, first, second, third and fourth resistors, a bipolar transistor and a field effect transistor. The first capacitor and the second capacitor are connected between a signal input end and a grounding end; the third capacitor and the fourth resistor are connected in series between the signal input end and the grounding end; a base electrode of the bipolar transistor is connected with a common point between the third capacitor and the fourth resistor through the third resistor, an emitting electrode is connected with the signal input end through the second resistor and the first resistor, and a collector electrode is connected with the grounding end; and a grid electrode of the field effect transistor is connected with a common point between the first resistor and the second resistor, a source electrode is connected with the signal input end, and a drain electrode is connected with a signal output end. The invention also provides a power supply device, and the bipolar transistor is controlled to work in a saturation region through a resistor-capacitor network, thereby controlling the field effect transistor to work in a variable resistance region, enabling a power supply signal of the output end to rise slowly, and greatly reducing surge current when the device is powered on.
Description
Technical field
The invention belongs to display apparatus test field, more particularly, to a kind of surge current control circuit and electric supply installation.
Background technology
At present for most of DC-DC Switching Power Supplies, in the moment of start, a very big electric current, namely usually said surge current can be produced on its power supply buses.Components and parts in circuit are not only brought very big instantaneous stress by the generation of surge current, cause components and parts impaired, also other electrical equipments (such as display panels even load) being articulated on same power supply buses can be produced bigger instantaneous disturbance.Therefore the surge current of DC-DC Switching Power Supply is controlled by, is very necessary.
Currently in order to control surge current is everlasting, the front end of energy storage original paper adopts surge current control circuit.Fig. 1 is the circuit theory diagrams of the surge current control circuit of prior art.Fig. 2 illustrates the oscillogram of the output signal of the surge current control circuit of prior art.As shown in Figure 1, described surge current control circuit is by a bipolar transistor Q11, one field-effect transistor Q12, first electric capacity C11, second electric capacity C12, first resistance R11, second resistance R12, 3rd resistance R13, 4th resistance R14, 5th resistance R15 and a diode Q13 composition, 4th resistance R14 and the 5th resistance R15 is connected in series between signal output part and earth terminal, first electric capacity C11 and the second electric capacity C12 is connected in parallel between signal output part and earth terminal, the emitter stage of bipolar transistor Q11 is connected with signal output part by the first resistance R11 and the second resistance R12, colelctor electrode is connected with earth terminal, common point between base stage with the 4th resistance R14 and the 5th resistance R15 is connected；Common point between grid and the first resistance R11 and the second resistance R12 of field-effect transistor Q12 connects, and source electrode is connected with signal input part, and drain electrode is connected with signal output part；3rd resistance R13 and diode Q13 is connected in series between the grid of field-effect transistor Q12 and drain electrode.After system electrification, the first electric capacity C11 and the second electric capacity C12 is charged by circuit, and voltage is gradually increasing, until bipolar transistor Q11 opens, and then field-effect transistor Q12 opens, and back-end system is started working.In actual applications, owing to powered on moment electric current is relatively big, the 3rd resistance R13 often burns；Or load excessive time, circuit quits work.
Summary of the invention
It is an object of the invention to provide a kind of surge current control circuit and electric supply installation.
According to an aspect of the present invention, a kind of surge current control circuit is provided, including the first electric capacity, the second electric capacity, the 3rd electric capacity, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, bipolar transistor and field-effect transistor, wherein, the first electric capacity is connected between signal input part and earth terminal；Second electric capacity is connected between signal input part and earth terminal；3rd electric capacity and the 4th resistant series are connected between signal input part and earth terminal；The base stage of described bipolar transistor is connected by the common point between the 3rd resistance with described 3rd electric capacity and the 4th resistance, and emitter stage is connected with signal input part by the second resistance and the first resistance, and colelctor electrode is connected with earth terminal；Common point between the grid of described field-effect transistor with described first resistance and the second resistance is connected, and source electrode is connected with signal input part, and drain electrode is connected with signal output part.
Preferably, the rate of rise in power up is controlled by the 3rd electric capacity and the 4th resistance.
Preferably, described 3rd electric capacity and the 4th resistance control bipolar transistor are operated in saturation region.
Preferably, described first resistance, the second resistance and be operated in saturation region bipolar transistor control described field-effect transistor be operated in variable resistance district.
Preferably, the resistance of the field-effect transistor being operated in variable resistance district is gradually reduced, and the power supply signal rate of rise of signal output part reduces.
According to a further aspect in the invention, it is provided that a kind of electric supply installation, it is used for powering to the load, including: supply module, it is connected with external power source, for external power source being converted to the power supply signal powered to the load；Surge current control circuit, is connected with described supply module and described load, for described power supply signal is supplied to described load；Wherein, surge current control circuit, including the first electric capacity, the second electric capacity, the 3rd electric capacity, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, bipolar transistor and field-effect transistor, wherein, the first electric capacity is connected between signal input part and earth terminal；Second electric capacity is connected between signal input part and earth terminal；3rd electric capacity and the 4th resistant series are connected between signal input part and earth terminal；The base stage of described bipolar transistor is connected by the common point between the 3rd resistance with described 3rd electric capacity and the 4th resistance, and emitter stage is by the second resistance and the first resistance and is connected with signal input part, and colelctor electrode is connected with earth terminal；Common point between the grid of described field-effect transistor with described first resistance and the second resistance is connected, and source electrode is connected with signal input part, and drain electrode is connected with signal output part.
Preferably, the rate of rise in power up is controlled by the 3rd electric capacity and the 4th resistance.
Preferably, described 3rd electric capacity and the 4th resistance control bipolar transistor are operated in saturation region.
Preferably, described first resistance, the second resistance and be operated in saturation region bipolar transistor control described field-effect transistor be operated in variable resistance district.
Preferably, the resistance of the field-effect transistor being operated in variable resistance district is gradually reduced, and the power supply signal rate of rise of signal output part reduces.
Surge current control circuit provided by the invention, control bipolar transistor by the 3rd electric capacity and the 4th resistance and be operated in saturation region, and then controlling filed effect transistor is operated in variable resistance district, makes the power supply signal of signal output part slowly increase, be greatly reduced the surge current powered on.
Accompanying drawing explanation
By referring to the accompanying drawing description to the embodiment of the present invention, above-mentioned and other purposes of the present invention, feature and advantage will be apparent from, in the accompanying drawings:
Fig. 1 illustrates the schematic diagram of surge current control circuit of the prior art；
Fig. 2 illustrates the oscillogram of the output signal of the surge current control circuit of prior art；
Fig. 3 illustrates the schematic diagram of surge current control circuit according to embodiments of the present invention；
Fig. 4 illustrates equivalent circuit diagram during surge current control circuit work according to embodiments of the present invention；
Fig. 5 illustrates the oscillogram of the output signal of surge current control circuit according to embodiments of the present invention；
Fig. 6 illustrates that surge current according to embodiments of the present invention controls the module diagram of device.
Detailed description of the invention
It is more fully described various embodiments of the present invention hereinafter with reference to accompanying drawing.In various figures, identical element adopts same or similar accompanying drawing labelling to represent.For the sake of clarity, the various piece in accompanying drawing is not necessarily to scale.
The present invention can present in a variety of manners, some of them example explained below.
Fig. 3 illustrates the schematic diagram of surge current control circuit according to embodiments of the present invention.As shown in Figure 2, described surge current control circuit is used for controlling surge current, including the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the first resistance R1, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, bipolar transistor Q1 and field-effect transistor Q2.
Wherein, the first electric capacity C1 is connected between signal input part and earth terminal.
In the present embodiment, what this signal input part inputted is the DC power signal of supply module offer.
Second electric capacity C2 is connected between signal input part and earth terminal.
3rd electric capacity C3 and the 4th resistance R4 is connected in series between signal input part and earth terminal.
The base stage of described bipolar transistor Q1 is connected by the common point between the 3rd resistance R3 with described 3rd electric capacity C3 and the 4th resistance R4, and emitter stage is by the second resistance R2 and the first resistance R1 and is connected with signal input part, and colelctor electrode is connected with earth terminal.
In the present embodiment, bipolar transistor Q1 is PNP type triode, has cut-in voltage Uon.Electric potential difference U between base stage and emitter stageeb≤Uon, Ueb> UecTime, bipolar transistor Q1 is in cut-off state；Work as Ueb> Uon, Ueb≥UecTime, bipolar transistor Q1 is in saturation；Work as Ueb> Uon, Ueb< Uec, bipolar transistor Q1 is in magnifying state.
In the present embodiment, when powering on, certain electric charge assembled by the bottom crown of the 3rd electric capacity C3 so that the base stage of bipolar transistor Q1 is in high level state, now, and Ueb=0, bipolar transistor Q1 is in cut-off state, afterwards the 3rd electric capacity C3 electric discharge, and the base voltage of bipolar transistor Q1 is gradually lowered, until Ueb> Uon, control discharge time by the metering function of the 4th resistance R4, make Ueb≥Uec, now bipolar transistor Q1 is in saturation.
Common point between the grid of described field-effect transistor Q2 with described first resistance and the second resistance is connected, and source electrode is connected with signal input part, and drain electrode is connected with signal output part.
In the present embodiment, field-effect transistor Q2 is P-channel enhancement type MOS transistor, has cut-in voltage UGS(th), wherein, UGS(th)< 0.Work as UGS< UGS(th)Time, field-effect transistor Q2 is in the conduction state, i.e. variable resistance district；Work as UGS> UGS(th)Time, field-effect transistor Q2 is in cut-off state.
When bipolar transistor Q1 is in cut-off state, the grid voltage U of field-effect transistor Q2GEqual to source voltage US, now, UGS> UGS(th), field-effect transistor Q2 is in cut-off state.
When bipolar transistor Q1 is in saturation, then the voltage at the first resistance R1 two ends increases, and then causes the grid voltage U of field-effect transistor Q2GLess than source voltage US, work as UGS< UGS(th)Time field-effect transistor Q2 conducting, be operated in variable resistance district, it is achieved that the slow rising of output end power signal.
Fig. 4 illustrates the equivalent circuit diagram during surge current control circuit work of the embodiment of the present invention.Fig. 5 illustrates the oscillogram of the output signal of the surge current control circuit of the embodiment of the present invention.As shown in Figure 4, this circuit equivalence can become a variable resistance, makes the voltage of signal output part slowly increase, until signal output part voltage is equal to the voltage of signal input part.
Surge current control circuit provided by the invention, control bipolar transistor by the 3rd electric capacity and the 4th resistance and be operated in saturation region, and then controlling filed effect transistor is operated in variable resistance district, makes the power supply signal of signal output part slowly increase, be greatly reduced the surge current powered on.
Fig. 6 illustrates the module diagram of electric supply installation according to embodiments of the present invention.As shown in Figure 6, described electric supply installation is for providing power supply signal to load 30, including supply module 10 and surge current control circuit 11.
Wherein, supply module 10 is connected with external power source, for external power source converts to the power supply signal powered to the load.
In the present embodiment, if external power source is the alternating voltage of 220V, and load needs the DC voltage of 12V or 5V, and described supply module for converting the DC voltage of 12V or 5V to by the alternating voltage of 220V.Load can be display panels, it is also possible to be other electrical equipments.
Surge current control circuit 11 is connected with described supply module 10 and described load 20, for power supply signal is supplied to described load 20.
Described surge current control circuit 11 includes the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the first resistance R1, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, bipolar transistor Q1 and field-effect transistor Q2.
Wherein, the first electric capacity C1 is connected between signal input part and earth terminal.
In the present embodiment, what this signal input part inputted is the DC power signal of supply module offer.
Second electric capacity C2 is connected between signal input part and earth terminal.
3rd electric capacity C3 and the 4th resistance R4 is connected in series between signal input part and earth terminal.
The base stage of described bipolar transistor Q1 is connected by the common point between the 3rd resistance R3 with described 3rd electric capacity C3 and the 4th resistance R4, and emitter stage is by the second resistance R2 and the first resistance R1 and is connected with signal input part, and colelctor electrode is connected with earth terminal.
In the present embodiment, bipolar transistor Q1 is PNP type triode, has cut-in voltage Uon.Electric potential difference U between base stage and emitter stageeb≤Uon, Ueb> UecTime, bipolar transistor Q1 is in cut-off state；Work as Ueb> Uon, Ueb≥UecTime, bipolar transistor Q1 is in saturation；Work as Ueb> Uon, Ueb< Uec, bipolar transistor Q1 is in magnifying state.
In the present embodiment, when powering on, certain electric charge assembled by the bottom crown of the 3rd electric capacity C3 so that the base stage of bipolar transistor Q1 is in high level state, now, and Ueb=0, bipolar transistor Q1 is in cut-off state, afterwards the 3rd electric capacity C3 electric discharge, and the base voltage of bipolar transistor Q1 is gradually lowered, until Ueb> Uon, control discharge time by the metering function of the 4th resistance R4, make Ueb≥Uec, now bipolar transistor Q1 is in saturation.
Common point between the grid of described field-effect transistor Q2 with described first resistance and the second resistance is connected, and source electrode is connected with signal input part, and drain electrode is connected with signal output part.
In the present embodiment, field-effect transistor Q2 is P-channel enhancement type MOS transistor, has cut-in voltage UGS(th), wherein, UGS(th)< 0.Work as UGS< UGS(th)Time, field-effect transistor Q2 is in the conduction state, i.e. variable resistance district；Work as UGS> UGS(th)Time, field-effect transistor Q2 is in cut-off state.
When bipolar transistor Q1 is in cut-off state, the grid voltage U of field-effect transistor Q2GEqual to source voltage US, now, UGS> UGS(th), field-effect transistor Q2 is in cut-off state.
When bipolar transistor Q1 is in saturation, then the voltage at the first resistance R1 two ends increases, and then causes the grid voltage U of field-effect transistor Q2GLess than source voltage US, work as UGS< UGS(th)Time field-effect transistor Q2 conducting, be operated in variable resistance district, it is achieved that the slow rising of output end power signal.
Electric supply installation provided by the invention, utilize the 3rd electric capacity in surge current control circuit and the 4th resistance to control bipolar transistor and be operated in saturation region, and then controlling filed effect transistor is operated in variable resistance district, the power supply signal making signal output part slowly rises, and is greatly reduced the surge current powered on.
According to embodiments of the invention as described above, these embodiments do not have all of details of detailed descriptionthe, are not intended to the specific embodiment that this invention is only described yet.Obviously, as described above, can make many modifications and variations.These embodiments are chosen and specifically described to this specification, is to explain principles of the invention and practical application better, so that skilled artisan can utilize the present invention and the amendment on basis of the present invention to use well.Protection scope of the present invention should be as the criterion with the scope that the claims in the present invention define.
Claims (10)
1. a surge current control circuit, it is characterised in that include the first electric capacity, the second electric capacity, the 3rd electric capacity, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, bipolar transistor and field-effect transistor,
Wherein, the first electric capacity is connected between signal input part and earth terminal；
Second electric capacity is connected between signal input part and earth terminal；
3rd electric capacity and the 4th resistant series are connected between signal input part and earth terminal；
The base stage of described bipolar transistor is connected by the common point between the 3rd resistance with described 3rd electric capacity and the 4th resistance, and emitter stage is connected with signal input part by the second resistance and the first resistance, and colelctor electrode is connected with earth terminal；
Common point between the grid of described field-effect transistor with described first resistance and the second resistance is connected, and source electrode is connected with signal input part, and drain electrode is connected with signal output part.
2. surge current control circuit according to claim 1, it is characterised in that the rate of rise in power up is controlled by described 3rd electric capacity and the 4th resistance.
3. surge current control circuit according to claim 2, it is characterised in that described 3rd electric capacity and the 4th resistance control described bipolar transistor and is operated in saturation region.
4. surge current control circuit according to claim 3, it is characterised in that described first resistance, the second resistance and be operated in saturation region bipolar transistor control described field-effect transistor be operated in variable resistance district.
5. surge current control circuit according to claim 4, it is characterised in that the resistance of the field-effect transistor being operated in variable resistance district is gradually reduced, the power supply signal rate of rise of described signal output part reduces.
6. an electric supply installation, is used for powering to the load, it is characterised in that including:
Supply module, is connected with external power source, for external power source converts to the power supply signal powered to the load；
Surge current control circuit, is connected with described supply module and described load, for described power supply signal is supplied to described load；
Wherein, surge current control circuit, including the first electric capacity, the second electric capacity, the 3rd electric capacity, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, bipolar transistor and field-effect transistor,
Wherein, the first electric capacity is connected between signal input part and earth terminal；
Second electric capacity is connected between signal input part and earth terminal；
3rd electric capacity and the 4th resistant series are connected between signal input part and earth terminal；
The base stage of described bipolar transistor is connected by the common point between the 3rd resistance with described 3rd electric capacity and the 4th resistance, and emitter stage is connected with signal input part by the second resistance and the first resistance, and colelctor electrode is connected with earth terminal；
Common point between the grid of described field-effect transistor with described first resistance and the second resistance is connected, and source electrode is connected with signal input part, and drain electrode is connected with signal output part.
7. electric supply installation according to claim 6, it is characterised in that the rate of rise in power up is controlled by described 3rd electric capacity and the 4th resistance.
8. electric supply installation according to claim 7, it is characterised in that described 3rd electric capacity and the 4th resistance control described bipolar transistor and is operated in saturation region.
9. electric supply installation according to claim 8, it is characterised in that described first resistance, the second resistance and be operated in saturation region bipolar transistor control described field-effect transistor be operated in variable resistance district.
10. electric supply installation according to claim 9, it is characterised in that the resistance of the field-effect transistor being operated in variable resistance district is gradually reduced, the power supply signal rate of rise of described signal output part reduces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610278917.7A CN105762781B (en) | 2016-04-28 | 2016-04-28 | Surge current control circuit and power supply unit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610278917.7A CN105762781B (en) | 2016-04-28 | 2016-04-28 | Surge current control circuit and power supply unit |
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| CN105762781A true CN105762781A (en) | 2016-07-13 |
| CN105762781B CN105762781B (en) | 2019-04-30 |
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Cited By (5)
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| CN107026436A (en) * | 2017-04-17 | 2017-08-08 | 顺丰科技有限公司 | Electricity is relieved a garrison the functional module of firing circuit, electron speed regulator and high-voltage great-current |
| CN107040738A (en) * | 2017-04-14 | 2017-08-11 | 四川长虹电器股份有限公司 | Eliminate voltage and current exceeded circuit when semiotic function module starts upper electricity |
| CN107404222A (en) * | 2017-09-08 | 2017-11-28 | 中国船舶重工集团公司第七0四研究所 | The soft starting circuit of DC supply high-power inverter |
| CN109245082A (en) * | 2018-10-16 | 2019-01-18 | 大连海事大学 | Two-way switch circuit that is a kind of anti-reverse and inhibiting power-on surge current |
| CN109510448A (en) * | 2018-11-09 | 2019-03-22 | 天津航空机电有限公司 | A kind of surge restraint circuit of aviation converter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107040738A (en) * | 2017-04-14 | 2017-08-11 | 四川长虹电器股份有限公司 | Eliminate voltage and current exceeded circuit when semiotic function module starts upper electricity |
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| CN109245082A (en) * | 2018-10-16 | 2019-01-18 | 大连海事大学 | Two-way switch circuit that is a kind of anti-reverse and inhibiting power-on surge current |
| CN109510448A (en) * | 2018-11-09 | 2019-03-22 | 天津航空机电有限公司 | A kind of surge restraint circuit of aviation converter |
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| CN105762781B (en) | 2019-04-30 |
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Address after: 215301, 1, Longteng Road, Kunshan, Jiangsu, Suzhou Patentee after: Kunshan Longteng Au Optronics Co Address before: 215301, 1, Longteng Road, Kunshan, Jiangsu, Suzhou Patentee before: Kunshan Longteng Optronics Co., Ltd. |