CN109244071B - 功率器件保护芯片及其制备方法 - Google Patents
功率器件保护芯片及其制备方法 Download PDFInfo
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- CN109244071B CN109244071B CN201811149742.5A CN201811149742A CN109244071B CN 109244071 B CN109244071 B CN 109244071B CN 201811149742 A CN201811149742 A CN 201811149742A CN 109244071 B CN109244071 B CN 109244071B
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- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 100
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 230000004888 barrier function Effects 0.000 claims abstract description 46
- 238000002955 isolation Methods 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 65
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 20
- 238000001312 dry etching Methods 0.000 claims description 12
- 238000011049 filling Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000001657 homoepitaxy Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
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Application Number | Priority Date | Filing Date | Title |
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CN201811149742.5A CN109244071B (zh) | 2018-09-29 | 2018-09-29 | 功率器件保护芯片及其制备方法 |
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CN201811149742.5A CN109244071B (zh) | 2018-09-29 | 2018-09-29 | 功率器件保护芯片及其制备方法 |
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CN109244071A CN109244071A (zh) | 2019-01-18 |
CN109244071B true CN109244071B (zh) | 2021-06-18 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1565051A (zh) * | 2001-10-04 | 2005-01-12 | 通用半导体公司 | 具有带易于浮岛形成的台阶式沟槽的电压维持层的功率半导体器件的制造方法 |
CN106298509A (zh) * | 2015-06-05 | 2017-01-04 | 北大方正集团有限公司 | 瞬态抑制二极管的制造方法和瞬态抑制二极管 |
CN107359159A (zh) * | 2017-07-12 | 2017-11-17 | 顾海昌 | 瞬态电压抑制器及其制作方法 |
CN108063138A (zh) * | 2017-12-14 | 2018-05-22 | 深圳市晶特智造科技有限公司 | 瞬态电压抑制器及其制作方法 |
-
2018
- 2018-09-29 CN CN201811149742.5A patent/CN109244071B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1565051A (zh) * | 2001-10-04 | 2005-01-12 | 通用半导体公司 | 具有带易于浮岛形成的台阶式沟槽的电压维持层的功率半导体器件的制造方法 |
CN106298509A (zh) * | 2015-06-05 | 2017-01-04 | 北大方正集团有限公司 | 瞬态抑制二极管的制造方法和瞬态抑制二极管 |
CN107359159A (zh) * | 2017-07-12 | 2017-11-17 | 顾海昌 | 瞬态电压抑制器及其制作方法 |
CN108063138A (zh) * | 2017-12-14 | 2018-05-22 | 深圳市晶特智造科技有限公司 | 瞬态电压抑制器及其制作方法 |
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