CN109243969A - 管式pecvd氮化硅渐变膜工艺 - Google Patents

管式pecvd氮化硅渐变膜工艺 Download PDF

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CN109243969A
CN109243969A CN201811008455.2A CN201811008455A CN109243969A CN 109243969 A CN109243969 A CN 109243969A CN 201811008455 A CN201811008455 A CN 201811008455A CN 109243969 A CN109243969 A CN 109243969A
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silane
silicon nitride
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蔡新兴
朱露
张凯胜
姚伟忠
孙铁囤
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Changzhou EGing Photovoltaic Technology Co Ltd
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Abstract

本发明涉及太阳能电池生产技术领域，尤其涉及一种管式PECVD氮化硅渐变膜工艺，通过控制氨气硅烷分别以固定斜率增加和减少来达到氨气硅烷比不断增加，使得沉积的氮化硅膜为折射率由高到低不断变化，沉积的氮化硅膜为连续渐变膜，可以达到接近硅片基底的沉积的氮化硅折射率较高，实现更优秀的钝化效果同时消除了由于原先膜层之间折射率差距较大造成的光学损失。

Description

管式PECVD氮化硅渐变膜工艺
技术领域
本发明涉及太阳能电池生产技术领域，尤其涉及一种管式PECVD氮化硅渐变膜工艺。
背景技术
在光伏领域，当太阳光照射到太阳能电池表面时会有部分光被反射，造成较大光损失，所以需要在电池片表面沉积一层或多层膜来达到减反射的目的，通常使用PECVD沉积氮化硅薄膜，它含有SI、N、H三种元素，既可以起到减反的作用，也可以达到表面钝化的作用。目前主流的管式PECVD用来沉积氮化硅多层膜，通过改变硅烷氨气比来沉积不同膜层特性的氮化硅膜层，通过时间控制不同膜层的厚度，一般控制底层为折射率n1较高达到更好的钝化目的，外层折射率n3使得整体反射率更低，中间层n2为缓冲层。目前这种膜层搭配虽然由n2作为缓冲层，但是膜层之间的折射率差还是偏大，不利于光学匹配。
发明内容
本发明要解决的技术问题是：为了解决多层膜的膜层之间折射率差异导致光学匹配性差造成光学损失的技术问题，本发明提供一种管式PECVD氮化硅渐变膜工艺，旨在解决由于氮化硅膜层之间折射率差距较大造成的光学损失问题，可以实现在增加底层氮化硅折射率的同时达到更优异的钝化效果，降低外层氮化硅折射率使整体电池片正面反射率降低。
本发明解决其技术问题所采用的技术方案是：一种管式PECVD氮化硅渐变膜工艺，1)在硅片正面形成绒面；
2)在硅片正面进行P扩散；
3)去除硅片正面在扩散中形成的磷硅玻璃层和硅片四周的P扩散层；
4)在硅片背面沉积ALO3；
5)将硅片退火；
6)在硅片背面沉积氮化硅膜；
7)在硅片正面沉积渐变减反射膜；
8)在硅片背面激光开孔；
9)在硅片背面形成背电极和铝背场；
10)在硅片正面形成正电极；
11)将硅片进行烧结；
其特征在于：所述步骤7)中沉积连续渐变减反射膜采用的为初始固定氨气硅烷比为3～5:1，镀膜结束时的氨气硅烷比为9～12:1，镀膜时间为700-900s，整个镀膜过程中氨气以固定斜率i增加，氨气量与镀膜时间成正比，硅烷以固定斜率h减少，硅烷量与镀膜时间成反比。
进一步，具体地，设置镀膜时间700s，工艺初始氨气为5000sccm,工艺结束氨气为7000sccm,可以得出氨气每秒增加2.86sccm；工艺初始硅烷为1200sccm,工艺结束硅烷为620sccm,可以得出硅烷每秒减少0.83sccm；整体初始氨气硅烷比为5000:1200，工艺结束时氨气硅烷比为7000:620，整体工艺过程中氨气硅烷比例在不断增加。
本发明的有益效果是，本发明的管式PECVD氮化硅渐变膜工艺，通过控制氨气硅烷分别以固定斜率增加和减少(均匀的增加和减少)来达到氨气硅烷比不断增加，使得沉积的氮化硅膜为折射率由高到低不断变化，沉积的氮化硅膜为连续渐变膜，可以达到接近硅片基底的沉积的氮化硅折射率较高，实现更优秀的钝化效果同时消除了由于原先膜层之间折射率差距较大造成的光学损失。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是现有技术中多层膜结构(n1,n2,n3表示各层的折射率不同，d1,d2,d3表示各层的厚度)。
图2中为本发明实施例一氨气流量和硅烷流量变化图。
图中：1、氨气流量初始变化线条，2、硅烷流量初始变化线条。
具体实施方式
现在结合附图对本发明作进一步详细的说明。这些附图均为简化的示意图，仅以示意方式说明本发明的基本结构，因此其仅显示与本发明有关的构成。
如图1所示，是本发明最优实施例，一种管式PECVD氮化硅渐变膜工艺，包括如下步骤：
1)在硅片正面形成绒面；
2)在硅片正面进行P扩散；
3)去除硅片正面在扩散中形成的磷硅玻璃层和硅片四周的P扩散层；
4)在硅片背面沉积ALO3；
5)将硅片退火；
6)在硅片背面沉积氮化硅膜；
7)在硅片正面沉积渐变减反射膜；
8)在硅片背面激光开孔；
9)在硅片背面形成背电极和铝背场；
10)在硅片正面形成正电极；
11)将硅片进行烧结；
所述步骤7)中沉积连续渐变减反射膜采用的为初始固定氨气硅烷比为3～5:1，镀膜结束时的氨气硅烷比为9～12:1，镀膜时间为700-900s，整个镀膜过程中氨气以固定斜率i增加，固定斜率i为结束和初始氨气差值再除以镀膜时间，氨气量与镀膜时间成正比，硅烷以固定斜率h减少，硅烷量与镀膜时间成反比，固定斜率h为结束和初始硅烷差值再除以镀膜时间。
具体实施例1为：设置镀膜时间700s，工艺初始氨气为4800sccm,工艺结束氨气为6500sccm,可以算出氨气每秒增加2.43sccm；工艺初始硅烷为1200sccm,工艺结束硅烷为700sccm,可以算出硅烷每秒减少0.71sccm；整体初始氨气硅烷比为4800:1200，工艺结束氨气硅烷比为6500:700，整体工艺过程中氨气硅烷比例在不断增加。初始n值为2.4，结束n值为2.05。
具体实施例2为：设置镀膜时间720s，工艺工艺初始氨气为4800sccm,工艺结束氨气为7000sccm,可以算出氨气每秒增加3.14sccm；工艺初始硅烷为1200sccm,工艺结束硅烷为620sccm,可以算出硅烷每秒减少0.83sccm；整体初始氨气硅烷比为4800:1200，工艺结束氨气硅烷比为7000:620，整体工艺过程中氨气硅烷比例在不断增加。初始n值为2.4，结束n值为2.02。
如图1所示，是传统的多层减反射膜，也就是每一层折射率都是严格区分的，传统的多层减反射膜作为对比组，n1＝2.4，n2＝2.1,n3＝2.02。
EFF Uoc Isc Rs Rsh FF
对比组 21.40％ 663.0 9.877 2.21 194 79.73％
实验组一 21.50％ 664.7 9.901 2.24 192 79.69％
实验组二 21.54％ 664.8 9.909 2.24 188 79.77％
从实验组一与对比组可见，光电效率提高0.1％，主要为Uoc提高1.7mV，Isc提高24mA；
从实验组二与对比组可见，光电转换效率提高0.14％，主要为Uoc提高1.8mV，Isc提高32mA。
传统的多层减反射膜，每一层折射率都是严格区分的，而本发明的管式PECVD氮化硅渐变膜工艺，通过控制氨气硅烷分别以固定斜率增加和减少来达到氨气硅烷比不断增加，使得沉积的氮化硅膜为折射率由高到低不断变化，也就是基本为一层结构但是折射率始终是平稳过渡的，没有特别的区分，折射率转换成线条图，是连续的直线，而不是曲线，可以达到接近硅片基底的沉积的氮化硅折射率较高，实现更优秀的钝化效果，同时消除了由于原先膜层之间折射率差距较大造成的光学损失。
以上述依据本发明的理想实施例为启示，通过上述的说明内容，相关工作人员完全可以在不偏离本项发明技术思想的范围内，进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容，必须要根据权利要求范围来确定其技术性范围。

Claims (3)

1.一种管式PECVD氮化硅渐变膜工艺，包括如下步骤：
1)在硅片正面形成绒面；
2)在硅片正面进行P扩散；
3)去除硅片正面在扩散中形成的磷硅玻璃层和硅片四周的P扩散层；
4)在硅片背面沉积ALO3；
5)将硅片退火；
6)在硅片背面沉积氮化硅膜；
7)在硅片正面沉积渐变减反射膜；
8)在硅片背面激光开孔；
9)在硅片背面形成背电极和铝背场；
10)在硅片正面形成正电极；
11)将硅片进行烧结；
其特征在于：所述步骤7)中沉积连续渐变减反射膜采用的为初始固定氨气硅烷比为3～5:1，镀膜结束时的氨气硅烷比为9～12:1，镀膜时间为700-900s，整个镀膜过程中氨气以固定斜率i增加，氨气量与镀膜时间成正比，硅烷以固定斜率h减少，硅烷量与镀膜时间成反比。
2.如权利要求1所述的管式PECVD氮化硅渐变膜工艺，其特征在于：设置镀膜时间700s，工艺初始氨气为4800sccm,工艺结束氨气为6500sccm,可以算出氨气每秒增加2.43sccm；工艺初始硅烷为1200sccm,工艺结束硅烷为700sccm,可以算出硅烷每秒减少0.71sccm；整体初始氨气硅烷比为4800:1200，工艺结束氨气硅烷比为6500:700，整体工艺过程中氨气硅烷比例在不断增加。
3.如权利要求1所述的管式PECVD氮化硅渐变膜工艺，其特征在于：设置镀膜时间720s，工艺工艺初始氨气为4800sccm,工艺结束氨气为7000sccm,可以算出氨气每秒增加3.14sccm；工艺初始硅烷为1200sccm,工艺结束硅烷为620sccm,可以算出硅烷每秒减少0.83sccm；整体初始氨气硅烷比为4800:1200，工艺结束氨气硅烷比为7000:620，整体工艺过程中氨气硅烷比例在不断增加。
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