CN109217736A - The miniature self energizing device that a kind of thermal energy based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other - Google Patents
The miniature self energizing device that a kind of thermal energy based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
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- H02N11/002—Generators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
- H02N2/186—Vibration harvesters
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- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
The present invention provides a kind of miniature self energizing device that the thermal energy based on cantilevered MPEG and MTEG is provided multiple forms of energy to complement each other with vibrational energy, it is made of the cantilevered MPEG structure Coupling of the MTEG structure at top and bottom, it is characterized in that, the MTEG structure at top is respectively equipped with top vacuum chamber and bottom vacuum chamber at the thermocouple both ends being made of P, N-type minisize thermoelectric arm；The cantilevered MPEG structure of bottom includes piezoelectric structure and the miniature piezoelectric electrification structure frame for accommodating inspection quality block, and the silicon substrate bottom of piezoelectric structure, which is coupled on the bottom support portion of piezo-electric generating structural framing by coupling framework, constitutes cantilever structure.The thermal loss as caused by above surrounding air and substrate can be effectively avoided in vacuum chamber of the invention, improves the temperature difference between cold and hot leaf.Respond that mechanical strain produces electricl energy and inspection quality block controls response to vibration frequency by piezoelectric film simultaneously, effective use external vibration produces electricl energy.
Description
Technical field
The present invention relates to thermo-electric generation self energizing technical fields, specifically, more particularly to a kind of based on cantilevered MPEG
The miniature self energizing device provided multiple forms of energy to complement each other with the thermal energy and vibrational energy of MTEG, can be applied to intelligent ship sensing network, ocean energy
The fields such as recycling, ocean intelligent sensing network.
Background technique
Wireless sensor network is a large amount of biographies interconnected using wireless telecommunications by being largely deployed in the zone of action
The network system of sensor node composition.With sensor technology, wireless communication technique, microelectric technique and Embedded Application technology
Reach its maturity, wireless sensor network rapidly develop.Using wireless sensor network, may be implemented in institute's deployment region
The monitoring of physical state, environmental aspect, biological information etc..Since wireless sensor network can be with rapid deployment, and have from group
It knits, high serious forgiveness and strong concealed advantage, wireless sensor network are applicable to hydrospace detection, environmental monitoring, ship monitoring
Equal applications.
Wireless sensor network used at present mainly uses battery to carry out work as power supply, due to wireless sensor
Network node has the characteristics that small in size, large number of, distribution is extensive, working environment is complicated, passes through periodic replacement battery
Come maintain sensor network continue working and it is unrealistic, therefore, the cruising ability of battery becomes limitation wireless sensor network
The principal element of node working life.It is often necessary to the battery of sensor be regularly replaced, so that sensor is able to maintain that normal work
Make, during replacing sensor battery, entire sensor needs dismantling connection again, the high, battery so as to cause repair cost
The problems such as lost of life, high temperature and environmental pollution.
In addition, with the development of medicine, medical treatment that pacemaker, artificial cochlea and biosensor etc. implant
Equipment is widely used in medical field, and gradually starts the detection and prevention applied to disease.These general Medical Devices
It is using battery powered, the capacity of battery becomes the principal element for limiting these medical equipment durable lifes.It is used up in battery capacity
Later, equipment can only be replaced by way of operation.While this mode improves Medical Devices use cost
Increase application risk.Therefore, in recent years, demand of the various circles of society to self energizing sensor is continuously increased.
Currently, the energy-provision way of miniature self energizing device mainly has solar power generation, thermo-electric generation, piezo-electric generating, chemistry
It can battery and fuel cell.It is short using chemical energy battery and fuel cell disposable supplying cell service life, and utilize solar energy, temperature
The environment such as difference, vibrational energy can provide energy for micro-system and may be implemented to power for a long time, have the length of power density not at any time
And the characteristics of changing.Using temperature difference caused by the waste heat or waste heat in environment and the mechanical energy in environment (as vibration,
Impact, rotary force, inertia force, pressure and fluid flowing), thermoelectric material and piezoelectric material can be respectively adopted without using outside
Simple energy converting structure is realized in the case where power supply, is powered for microsensor node.
To sum up, miniature temperature difference electricity generation device can play remarkable result, miniature pressure in the environment with equilibrium temperature difference
Electric power generator can play remarkable result in vibration environment, and ship not only have in normal/cruise, inside ship compared with
More high temperature heat sources, such as exhaust gas, the high-temperature steam, high temperature jacket water of diesel engine discharge, also have more high-frequency vibration component, such as
Deck, diesel engine, air-conditioning system, centrifugal oil separator etc. can provide sufficient vibration source for MPEG device.These high temperature heat sources and cabin
Interior temperature difference can provide sufficient temperature difference for MTEG device.High-frequency vibration component can provide for miniature piezoelectric power generator to be filled
The vibration source of foot.Meanwhile pushing towards with shipping industry 4.0, miniature temperature difference electricity generation device and miniature piezoelectric power generator can be
The microsensor network node arranged on intelligent ship provides electric energy, promotes the realization early of unmanned ship, therefore, it is necessary to
A kind of self energizing device integrating the two advantage is provided, the further implementation of China ocean power strategy is pushed.
Summary of the invention
Dismantling connection again is needed when replacing battery according to existing sensor set forth above and causes repair cost high, electric
The technical problems such as the pond lost of life, high temperature and environmental pollution, and a kind of thermal energy based on cantilevered MPEG and MTEG and vibration are provided
The miniature self energizing device that kinetic energy is provided multiple forms of energy to complement each other.The present invention mainly uses top for MTEG structure, utilizes novel double vacuum chamber knots
Structure obtains thermoelectric material hot and cold side maximum temperature difference to manage heat flow path, so that thermo-electric generation efficiency is improved, energy conversion
Rate is high；Bottom is cantilevered MPEG structure, using below the piezoelectric structure with silicon substrate, by coupling framework by inspection quality
Block is coupled in silicon substrate bottom surface, while being coupled with the frame for accommodating inspection quality block.The piezoelectric film of piezoelectric structure is for responding
The variation of mechanical strain and produce electricl energy, inspection quality block is used to control the response characteristic of vibration frequency, so that effective use is outer
Portion's vibration produces electricl energy.It is complementary mutually by cantilevered MPEG and MTEG self energizing device, thermal energy and vibrational energy can be utilized simultaneously
Power generation.By taking intelligent ship is applied as an example, the device of the invention is produced using the vibrational energy in ship pipeline waste heat and watercraft engine room
Raw electric energy provides electric power for ship microsensor, realizes ship sensing network self energizing.It uses simultaneously a kind of novel double true
Cavity structure obtains the maximum temperature difference of thermoelectric material hot and cold side to manage heat flow path, improves miniature thermo-electric generation efficiency.
The technological means that the present invention uses is as follows:
The miniature self energizing device that a kind of thermal energy based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other, by top
MTEG structure and bottom cantilevered MPEG structure Coupling constitute, which is characterized in that
The MTEG structure at top includes: that miniature thermo-electric generation is structure silicon-based, the miniature structure silicon-based bottom of thermo-electric generation
The multicrystalline silicon substrate layer of deposition, the multiple p-type minisize thermoelectric arms at array arrangement for being deposited on multicrystalline silicon substrate layer bottom
With N-type minisize thermoelectric arm, distinguish at the thermocouple both ends being made of the p-type minisize thermoelectric arm and the N-type minisize thermoelectric arm
Equipped with top vacuum chamber and bottom vacuum chamber, the cold end node of the p-type minisize thermoelectric arm and the N-type minisize thermoelectric arm it is cold
Leaf is contacted with the inner sidewall of the bottom vacuum chamber, and the protection metal for heat dissipation is additionally provided under the bottom vacuum chamber
Layer；
The cantilevered MPEG structure of bottom includes: piezoelectric structure with silicon substrate and for accommodating the miniature of inspection quality block
Piezo-electric generating structural framing, the miniature piezoelectric electrification structure silicon substrate bottom of the piezoelectric structure are coupled to described by coupling framework
Constitute cantilever structure on the bottom support portion of miniature piezoelectric electrification structure frame, the miniature piezoelectric electrification structure frame it is upper
The arm support portion side wall structure silicon-based with the miniature thermo-electric generation is fixed；The piezoelectric structure includes miniature piezoelectric electrification structure
It silicon substrate, the top electrode of the composition a pair of electrodes being placed in the miniature piezoelectric electrification structure silicon substrate and lower electrode and is clipped in described
The piezoelectric film produced electricl energy between top electrode and lower electrode；The miniature piezoelectric electrification structure frame has the micro- of pre-set dimension
Type piezo-electric generating structural cavities, the inspection quality block, which is located in the miniature piezoelectric electrification structure cavity, passes through the coupling frame
Frame is coupled to the miniature piezoelectric electrification structure silicon substrate upper surface；The cantilevered MPEG structure further include respectively with it is described on
What electrode was connected with the lower electrode power on polar cushion and lower electronic pads, it is described to power on polar cushion and the lower electronic pads pass through thin wire
Deliver the power to outside self energizing device on the conducting wire lead division of the miniature piezoelectric electrification structure frame external is connected to set
It is standby upper.
In above structure, in the top vacuum chamber and bottom vacuum chamber of the setting of thermocouple both ends, the two vacuum chambers can be with
It is effectively prevented from the thermal loss as caused by above surrounding air and substrate, improved between cold and hot leaf to the maximum extent
The temperature difference.Guard metal layer under bottom vacuum chamber, the guard metal layer play heat spreading function, can accelerate the heat dissipation of cold end node.
Preferably, peripheral cavity can be set in device peripheral region, effect is to avoid the silicon substrate of neighbouring miniature temperature difference electricity generation device to cold
Leaf transmits heat.
Further, the upper and lower end face of each p-type minisize thermoelectric arm and the N-type minisize thermoelectric arm is placed in described
Between bottom vacuum chamber and the top vacuum chamber, wherein the hot end node of the p-type minisize thermoelectric arm and the N-type are miniature
Upper end where the hot end node of thermoelectric arm is structure silicon-based by the multicrystalline silicon substrate layer and the miniature thermo-electric generation
Connect.
Further, the multicrystalline silicon substrate layer is on the miniature structure silicon-based bottom of thermo-electric generation as thermoelectric layer
What the polysilicon of 0.6~0.8 μ m-thick of deposition was formed.180keV and 80keV energy is injected into polysilicon respectively obtains N-type
With the minisize thermoelectric arm of p-type.
Further, top and bottom vacuum chamber, the top are formed by etching silicon substrate and non-impurity-doped silicon crystal respectively
The inner sidewall of vacuum chamber is sealed by the low stress purified silicates crystal layer of 2.8~3.2 μ m-thicks.
Further, on cold end node equipped with 0.8~1.2 μ m-thick oxide be used as insulating layer, act on be make it is cold
Leaf is easier to be cooled by the ambient air while insulation；The guard metal layer is by 0.6~0.8 μm as heat dissipating layer
Thick al deposition forms.
Further, the material of the inspection quality block is inorganic material, organic material or organic material and inorganic material
The composite material of composition.
Further, the material of the inspection quality block is one of glass, metal, ceramics, rubber, plastics or one kind
Above combination.
Further, the material of the miniature piezoelectric electrification structure frame be PCB, ceramics, glass, metal, plastics, silicon or
One of its mixture or more than one combination.
In the present invention, heat is transmitted from the bottom of device to top, in order between the cold and hot node of micro thermocouple
The biggish temperature difference is obtained, needs to reboot hot-fluid, makes longitudinal flow of the hot-fluid along micro thermocouple, reduces thermal loss.Phase
Compared with structure in the prior art, invention enhances the heat insulation capacities of bottom of device, avoid the cooling hot end node of surrounding air.
When apparatus surface convection coefficient with higher, the heat loss as caused by the cross-ventilation of bottom is more serious.
In miniature temperature difference electricity generation device proposed by the invention, optimizes heat flow path using a kind of double cavity structure, subtract
Few thermal loss.Each minisize thermoelectric arm is embedded between the vacuum chamber of bottom and top.Bottom vacuum chamber protects hot end node
It is not cooled down by cross-ventilation.On the contrary, cold end node connects with the inner wall of bottom vacuum chamber and connects with guard metal layer, indirectly
It is exposed to it in surrounding air.Bottom and top cavity all uses condition of high vacuum degree to seal, and effect is reduced through due to air
Heat loss caused by conduction and convection current.Design in this way, plane thermoelectric occasionally can get higher temperature in the vertical direction
Difference.In addition, guard metal layer is covered on the lower surface of device, as heat dissipating layer, which is covered on whole equipment table
Face, effect are to enable devices to effectively be discharged into heat in surrounding air from cold end node, and then expand whole device
The internal temperature difference.
In miniature piezoelectric power generator of the invention, piezoelectric membrane is placed between upper/lower electrode, for responding mechanical strain
Variation and produce electricl energy；The main function of inspection quality block is the response characteristic controlled to external vibration frequency, and is used single
The inspection quality block of one material is difficult to the different vibration frequency of response external and is easy to impact device, therefore the present invention
The materials such as tungsten, copper, stainless steel, silicon are coupled on inspection quality block by selection manufactures various frequency bands as power source, thus effectively
Ground is produced electricl energy using external vibration.
Compared with the prior art, the invention has the following advantages that
1, the miniature temperature difference electricity generation device of the present invention is managed hot-fluid by top vacuum chamber and bottom vacuum chamber and makes thermoelectricity
The temperature difference between two even nodes maximizes.
2, the miniature temperature difference electricity generation device of the present invention has been bonded protection metallic radiating layer in the cold end of device, to efficiently will
Heat is dispersed into surrounding air from the cold end of device.
3, the miniature temperature difference electricity generation device setting peripheral cavity of the present invention is avoided with cutting off the heat from surrounding silicon substrate micro-
The cold end node of the micro thermocouple of type temperature difference electricity generation device edge absorbs the heat of surrounding silicon substrate.
4, miniature piezoelectric power generator response mechanical strain of the present invention is in time and controllable to external vibration frequency, effectively generates
Electric energy.
5, miniature temperature difference electricity generation device of the invention and miniature piezoelectric self energizing device are complementary to one another, and are organically combined, can be same
The Shi Liyong temperature difference and vibrational energy power generation, energy conversion efficiency are higher.
To sum up, apply the technical scheme of the present invention many disadvantages for solving and replacing generate in cell process in the prior art
End produces electricl energy supply external equipment electricity consumption by thermo-electric generation and mechanical oscillation, substantially increases the cruising ability of power supply, have
Have that structure is simple, low manufacture cost, it is practical the advantages that, the present invention can be in microsensor for electrical domain based on the above reasons
It is widely popularized.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to do simply to introduce, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is that the present invention is based on the miniature self energizing devices that the thermal energy of cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other
Structural schematic diagram.
Fig. 2 is the partial enlarged view in Fig. 1 at A.
Fig. 3 is that the present invention is based on the miniature self energizing devices that the thermal energy of cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other
The schematic diagram of thermoelectricity even permutation.
In figure: 1, fixing bolt；2, top electrode；3, polar cushion is powered on；4, thin wire；5, contact hole；6, piezoelectric film；7, lower electricity
Pole；8, miniature piezoelectric electrification structure silicon substrate；9, miniature piezoelectric electrification structure frame；10, inspection quality block；11, conducting wire lead division；
12, miniature thermo-electric generation is structure silicon-based；13, top vacuum chamber；14, multicrystalline silicon substrate layer；15, guard metal layer；16, N-type is micro-
Type thermoelectric arm；17, cold end node；18, hot end node；19, p-type minisize thermoelectric arm；20, coupling framework；21, bottom vacuum chamber；
22, miniature piezoelectric electrification structure cavity；23, piezoelectric structure.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.It is real to the description of at least one exemplary embodiment below
It is merely illustrative on border, never as to the present invention and its application or any restrictions used.Based on the reality in the present invention
Example is applied, every other embodiment obtained by those of ordinary skill in the art without making creative efforts all belongs to
In the scope of protection of the invention.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to exemplary embodiments of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
Unless specifically stated otherwise, positioned opposite, the digital table of the component and step that otherwise illustrate in these embodiments
It is not limited the scope of the invention up to formula and numerical value.Simultaneously, it should be clear that for ease of description, each portion shown in attached drawing
The size divided not is to draw according to actual proportionate relationship.Technology known for person of ordinary skill in the relevant, side
Method and equipment may be not discussed in detail, but in the appropriate case, and the technology, method and apparatus should be considered as authorizing explanation
A part of book.In shown here and discussion all examples, appointing should be construed as merely illustratively to occurrence, and
Not by way of limitation.Therefore, the other examples of exemplary embodiment can have different values.It should also be noted that similar label
Similar terms are indicated in following attached drawing with letter, therefore, once it is defined in a certain Xiang Yi attached drawing, then subsequent attached
It does not need that it is further discussed in figure.
In the description of the present invention, it is to be understood that, the noun of locality such as " front, rear, top, and bottom, left and right ", " it is laterally, vertical,
Vertically, orientation or positional relationship indicated by level " and " top, bottom " etc. is normally based on orientation or position shown in the drawings and closes
System, is merely for convenience of description of the present invention and simplification of the description, in the absence of explanation to the contrary, these nouns of locality do not indicate that
It must have a particular orientation or be constructed and operated in a specific orientation with the device or element for implying signified, therefore cannot manage
Solution is limiting the scope of the invention: the noun of locality " inside and outside " refers to inside and outside the profile relative to each component itself.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, being described as if the device in attached drawing is squeezed " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under its device or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also be positioned with other different modes and (is rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
In addition, it should be noted that, limiting components using the words such as " first ", " second ", it is only for be convenient for
Corresponding components are distinguished, do not have Stated otherwise such as, there is no particular meanings for above-mentioned word, therefore should not be understood as to this
The limitation of invention protection scope.
As shown in Figure 1-3, the present invention provides a kind of thermal energy based on cantilevered MPEG and MTEG and vibrational energy multipotency are mutual
The miniature self energizing device mended, is made of the cantilevered MPEG structure Coupling of the MTEG structure at top and bottom.To be applied to ship
For oceangoing ship sensing network, miniature thermo-electric generation structure and cantilevered miniature piezoelectric electrification structure are connected by fixing bolt 1, are allowed to
Constitute rigid structure (upper arm supporting portions of the miniature piezoelectric electrification structure frame 9 i.e. described below and the miniature temperature difference
The side wall of electrification structure silicon substrate 12 is fixed).Whole device is fixed below ship hot-fluid pipeline, the silicon of miniature thermo-electric generation structure
Base and ship hot-fluid pipeline contact, miniature thermo-electric generation structure utilize pipeline cogeneration.While miniature piezoelectric electrification structure
It is produced electricl energy using vibrational energy.The electric energy that upper and lower two-part structure generates is defeated outward by conducting wire lead division 11 and thin wire 4
It send, is ship microsensor network power supply.
The MTEG structure at top includes: that miniature thermo-electric generation is structure silicon-based 12, the miniature thermo-electric generation structure silicon-based 12
The multicrystalline silicon substrate layer 14 of bottom deposit is deposited on the multiple micro- at the p-type of array arrangement of 14 bottom of multicrystalline silicon substrate layer
Type thermoelectric arm 19 and N-type minisize thermoelectric arm 16 are constituted by the p-type minisize thermoelectric arm 19 and the N-type minisize thermoelectric arm 16
Thermocouple both ends be respectively equipped with top vacuum chamber 13 and bottom vacuum chamber 21, the two vacuum chambers can be effectively avoided by ring
Thermal loss caused by above border air and substrate, to improve the temperature difference between cold and hot leaf to the maximum extent.The p-type is micro-
The inner sidewall of the cold end node of the cold end node of type thermoelectric arm 19 and the N-type minisize thermoelectric arm 16 and the bottom vacuum chamber 21
It contacts, the guard metal layer 15 for heat dissipation is additionally provided under the bottom vacuum chamber 21, which plays heat spreading function,
It can accelerate the heat dissipation of cold end node 17.Peripheral cavity (not shown) around device, effect are to avoid neighbouring miniature confession
The silicon substrate of energy device transmits heat to this miniature temperature difference electricity generation device cold end node.
In the miniature self energizing device that the thermal energy based on cantilevered MPEG and MTEG of invention is provided multiple forms of energy to complement each other with vibrational energy,
Heat source of the ship hot-fluid pipeline as miniature thermo-electric generation structure, 15 side of guard metal layer is as heat-sink shell and surrounding air phase
Contact.Micro thermocouple is produced electricl energy using the temperature difference between cold end node 17, hot end node 18, and the electric energy of generation is by leading
Line lead division 11 is conveyed outward and is powered for microsensor network node.
In view of the requirement of thin film technique thermoelectric material thickness, film thermocouple is arranged in multicrystalline silicon substrate layer the present invention
14 lower surface.Basic supporter of the multicrystalline silicon substrate layer 14 as thermoelectric structure has specific width W1, length L1And thickness
Spend T1。
Since heat is transmitted from the top of device to bottom, in order in the cold end node 17 of micro thermocouple, hot end node
The biggish temperature difference is obtained between 18, it is necessary to reboot heat, make longitudinal flow of the hot-fluid along micro thermocouple.Compared to existing
Technology, the present invention enhance thermal insulation from bottom of device, avoid the cooling hot end node 18 of surrounding air.Sensing provided by the present invention
In the miniature self energizing device of device network, top vacuum chamber 13 and bottom vacuum chamber 21 are introduced to optimize heat flow path.
As shown in Fig. 2, each minisize thermoelectric arm is embedded between top vacuum chamber 13 and bottom vacuum chamber 21.Bottom
Vacuum chamber 21 protects hot end node 18 not cooled down by cross-ventilation.On the contrary, cold end node 17 is exposed in surrounding air.Top
All condition of high vacuum degree is used to seal with bottom cavity, effect is to reduce to pass through the heat loss as caused by air transmitted and convection current.It is logical
Such design is crossed, plane thermoelectric occasionally can get higher temperature difference in the vertical direction.In addition, thin film metal layer 15 is covered on
The lower surface of MTEG structure, as heat dissipating layer.The thin film metal layer is covered on entire miniature thermo-electric generation structure lower surface, makees
It enables devices to effectively be discharged into heat in surrounding air from cold end with being, and then expands the temperature difference inside whole device,
Improve generating efficiency.
Since multicrystalline silicon substrate layer 14 has high thermal conductivity, for being located at the thermocouple at device edge, multicrystalline silicon substrate
The temperature of layer 14 is higher than the temperature of cold end node 17, this sub-fraction heat that will lead to multicrystalline silicon substrate 14 is passed to positioned at device
The cold end node 17 at edge.17 temperature of cold end node of micro thermocouple increases, between hot end node 18 and cold end node 17
Temperature difference will reduce.
In the miniature self energizing device of the sensor network provided multiple forms of energy to complement each other based on MTEG and MPEG of invention, the sky of surrounding
Chamber (not shown) is in the miniature thermo-electric generation structural edge of miniature self energizing device, by multicrystalline silicon substrate layer 14 and cold end knot
17 isolation of point, to avoid the micro thermocouple performance positioned at miniature thermo-electric generation structural edge by multicrystalline silicon substrate layer around
The influence of 14 heat.
The miniature temperature difference electricity generation device of the present invention is made by the following method:
Firstly, use Low Pressure Chemical Vapor Deposition deposited in silicon substrate 12 polysilicon layer 14 of about 0.6~0.8 μ m-thick as
Thermoelectric layer.Then, dry etching is carried out to multicrystalline silicon substrate layer 14, obtains thermoelectric arm figure.Again to the different energy of poly silicon layer
Amount is injected separately into phosphorus and boron to generate N-type minisize thermoelectric arm 16 and p-type minisize thermoelectric arm 19.
Deposited aluminum layer connects p-type and N-type thermoelectric arm.It is logical in order to optimize the heat in the miniature self energizing device of sensor network
Measure direction, creation top vacuum chamber 13 and bottom vacuum chamber 21.Pass through SF6And C4F8Gas utilizes deep reaction ion etching side
The method groove that etching depth is about 14~16 μm on miniature thermo-electric generation structure silicon-based 12, then uses SF6To inside grooves into
Row isotropic etching, to remove the silicon between groove and generate apex cavity 13.Then, it is answered with about 2.8~3.2 the low of μ m-thick
Power purified silicates crystal seals apex cavity 13.
In order to obtain bottom vacuum chamber 21, the pure silicon crystal that will be patterned into is covered as sacrificial layer, and on sacrificial layer
The Si of nanoscale plasma chemical vapor phase deposition3N4And amorphous silicon.By nitride and amorphous silicon layer etch it is wide by about 0.8~
1.2 μm, it is about 2.8~3.2 μm of small etched hole.Hereafter, silicon crystal is impregnated in buffer oxide etch agent about 20 minutes,
Sacrificial layer is removed by etch-hole.Finally, the sealing of Kong Yong low stress pure silicon crystal is sacrificed.In order to be easier cold end node 17
It is cooled by the ambient air, the oxide of about 0.8~1.2 μ m-thick is retained on cold end node 17 as insulating layer.Finally, will about
The al deposition of 0.6~0.8 μ m-thick is to apparatus surface as heat dissipating layer.
The cantilevered MPEG structure of bottom includes: piezoelectric structure 23 with silicon substrate and for accommodating inspection quality block 10
8 bottom of miniature piezoelectric electrification structure silicon substrate of miniature piezoelectric electrification structure frame 9, the piezoelectric structure 23 passes through coupling framework 20
It is coupled on the bottom support portion of the miniature piezoelectric electrification structure frame 9 and constitutes cantilever structure, the miniature piezoelectric power generation
The upper arm supporting portions of structural framing 9 and the side wall of the miniature thermo-electric generation structure silicon-based 12 are fixed；The piezoelectric structure 23 is
Cantilevered, including miniature piezoelectric electrification structure silicon substrate 8, a pair of of electricity of the composition being placed in the miniature piezoelectric electrification structure silicon substrate 8
The top electrode 2 of pole and lower electrode 7 and the piezoelectric film 6 produced electricl energy being clipped between the top electrode 2 and lower electrode 7；It is described
Miniature piezoelectric electrification structure frame 9 has the miniature piezoelectric electrification structure cavity 22 of pre-set dimension, the inspection quality block 10
It is coupled to the miniature piezoelectric electrification structure silicon in passing through the coupling framework 20 in the miniature piezoelectric electrification structure cavity 22
8 upper surface of base；The cantilevered MPEG structure further includes the top electrode connecting respectively with the top electrode 2 and the lower electrode 7
Pad 3 and lower electronic pads, it is described to power on polar cushion 3 and the lower electronic pads miniature piezoelectric power generation knot is connected to by thin wire 4
It is delivered the power on the external equipment outside self energizing device on the conducting wire lead division 11 of structure frame 9.
Here, piezoelectric structure 23 is cantilevered, and miniature piezoelectric hair is coupled in the lower surface of miniature piezoelectric electrification structure silicon substrate 8
On electric structural framing 9, as shown in Figure 1.Basic supporter of the miniature piezoelectric electrification structure silicon substrate 8 as piezoelectric structure 23, has
Specific width W2, length L2With thickness T2。
The width W of miniature piezoelectric electrification structure silicon substrate 8 should be depended primarily on by ringing characteristic to the frequency of external vibration2, length
L2, thickness T2With the position of quality and inspection quality block 10.Particularly, can by the mass M of control test mass block 10 come
Change frequency characteristic.If inspection quality block 10 is made of heavy metal materials such as tungsten, even if inspection quality block is small-sized,
The miniature self energizing device with low frequency response characteristic may be implemented.The material of inspection quality block 10 is by inorganic material (glass, gold
Category, ceramics etc.), organic material (rubber, plastics etc.) or at least one of organic nothing and machine composite material be made.
Miniature piezoelectric electrification structure frame 9 hangs piezoelectric structure 23, when external vibration occurs, allows 23 sound of piezoelectric structure
It answers external vibration and moves freely.Miniature piezoelectric electrification structure frame 9 includes have specific width A, length B and depth H micro-
Type piezo-electric generating structural openings chamber 22, to limit the maximum displacement of piezoelectric structure 23.In general, making miniature piezoelectric electrification structure frame
The height H of frame 9 is greater than the height of inspection quality block 10, and 10 response external of inspection quality block is vibrated and sufficiently moved.Miniature piezoelectric
Electrification structure frame 9 can be by least one in printed circuit board (PCB), ceramics, metal, plastics, silicon materials and its mixture
Kind is made.Also, multiple conducting wire lead divisions 11 can be drawn on the surface of miniature piezoelectric electrification structure frame 9, so that conducting wire is very
Be easy by piezoelectric structure 23 power on polar cushion 3 and lower electronic pads are connected to external circuit.
Top electrode 2 and lower electrode 7 have single-layer or multi-layer conductive film, and piezoelectric film 6 is inserted between them, are formed a pair of mutual
The top electrode 2 of isolation and lower electrode 7.Top electrode 2 and lower electrode 7 are exhausted by insulating film and 8 electricity of miniature piezoelectric electrification structure silicon substrate
Edge.Top electrode 2 and lower electrode 7 all respond the charge that the generation of piezoelectric film 6 is collected in mechanical strain variation by piezoelectricity conversion.
The one end for powering on polar cushion 3 is connected to top electrode 2 by contact hole 5, and one end of lower electronic pads is connected to lower electrode 7.
The charge that top electrode 2 and lower electrode 7 are collected is transported to external circuit, and and miniature piezoelectric by thin wire 4 by upper and lower electronic pads
Electrification structure silicon substrate 8 insulate.Electronic pads and electrode are made of electrically conductive material.
The effect of 6 material of piezoelectric film is: being converted by the mechanical strain variation that piezoelectricity conversion is applied to piezoelectric structure
Electric energy.6 material of piezoelectric film is made of at least one of inorganic material, organic material, nano material and its mixture.Miniature pressure
Piezoelectric film 6 in electric electrification structure is made of aluminium nitride film, and thickness is about 1 μm.
As described above, in the present invention, being coupled to due to 8 bottom surface of miniature piezoelectric electrification structure silicon substrate has miniature piezoelectric
On the miniature piezoelectric electrification structure frame 9 of electrification structure atrium 22, so miniature piezoelectric electrification structure frame 9 can hang pressure
Electric structure 23, thus piezoelectric structure 23 can generate mechanical displacement with response external vibration.Machinery corresponding to mechanical displacement is answered
Change can be applied on piezoelectric film 6.The charge that piezoelectric film 6 between top electrode 2 and lower electrode 7 generates is by top electrode 2 and lower electricity
Collect and be output to external circuit, miniature self energizing device power generation in pole 7.
Miniature piezoelectric power generator of the invention is made by the following method:
Firstly, by reactive ion etching or using the wet process of tetramethylammonium hydroxide (TMAH) or phosphoric acid (HPO) solution
Lithographic method patterns piezoelectric film to cover the effective area (i.e. piezoelectric film 6) of miniature self energizing device element, is formed under
The contact hole 5 that electrode 7 contacts.
Then, by chemically mechanical polishing, keep the bottom surface of silicon substrate thinning and formed with specific thicknesses T2It is miniature
Piezo-electric generating structure silicon-based 8.
Then inspection quality block 10 is integrated to the process of piezoelectric structure 23.Inspection quality block 10 passes through engaging process coupling
It closes.For example, after the adhesives of insulation or conduction is dripped to miniature piezoelectric electrification structure silicon substrate 8,10 quilt of inspection quality block
It is bonded and is heat-treated at a proper temperature to harden and fix.Alternatively, can directly be sent out in miniature piezoelectric by printing technology
The inspection quality block 10 made of organic/inorganic materials mixture is engaged on the lower surface of electricity structure silicon-based 8.
It is the process that piezoelectric structure 23 is coupled to inspection quality block 10 in next step, passes through fixed miniature piezoelectric electrification structure
The portion lower surface of silicon substrate 8 constitutes dynamic mechanism.For example, adhesives be titrated to miniature piezoelectric electrification structure silicon substrate 8 it
Afterwards, the portion lower surface of miniature piezoelectric electrification structure silicon substrate 8 is connected to by technique for sticking and is opened with miniature piezoelectric electrification structure
The upper surface of the miniature piezoelectric electrification structure frame 9 in oral cavity 22, is then heat-treated at a proper temperature.Appropriate
Under the conditions of, it is strengthened and fixed.Due in 9 surface advance reservation of miniature piezoelectric electrification structure frame conducting wire lead division
11, facilitate the top electrode 2 of piezoelectric structure 23 and the connection of lower electrode 7 and external circuit.
Next, mold is separately separated by mold separation component, so that piezoelectric structure 23 passes through mold separation recess portion
With specific width W2With specific length L2。
Then, the conducting wire that 9 surface of miniature piezoelectric electrification structure frame reserves in advance is connected to by lead key closing process to draw
Portion 11 out, piezoelectric structure 23 is connected using thin wire 4 powers on polar cushion and lower electronic pads 3.Fig. 1 show when thin wire 4
Miniature self energizing device when through connecting.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (8)
1. the miniature self energizing device that a kind of thermal energy based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other, by top
The cantilevered MPEG structure Coupling of MTEG structure and bottom is constituted, which is characterized in that
The MTEG structure at top includes: that miniature thermo-electric generation structure silicon-based (12), the miniature thermo-electric generation are structure silicon-based (12)
The multicrystalline silicon substrate layer (14) of bottom deposit, the multiple P at array arrangement for being deposited on multicrystalline silicon substrate layer (14) bottom
Type minisize thermoelectric arm (19) and N-type minisize thermoelectric arm (16), by the p-type minisize thermoelectric arm (19) and the miniature heat of the N-type
The thermocouple both ends that electric arm (16) is constituted are respectively equipped with top vacuum chamber (13) and bottom vacuum chamber (21), the miniature heat of p-type
The inside of the cold end node of electric arm (19) and the cold end node of the N-type minisize thermoelectric arm (16) and the bottom vacuum chamber (21)
Wall contacts, and the guard metal layer (15) for heat dissipation is additionally provided under the bottom vacuum chamber (21)；
The cantilevered MPEG structure of bottom includes: piezoelectric structure (23) with silicon substrate and for accommodating inspection quality block (10)
Miniature piezoelectric electrification structure silicon substrate (8) bottom of miniature piezoelectric electrification structure frame (9), the piezoelectric structure (23) passes through coupling
Frame (20), which is coupled on the bottom support portion of the miniature piezoelectric electrification structure frame (9), constitutes cantilever structure, described micro-
The upper arm supporting portions of type piezo-electric generating structural framing (9) and the side wall of the miniature thermo-electric generation structure silicon-based (12) are fixed；Institute
Piezoelectric structure (23) is stated to include miniature piezoelectric electrification structure silicon substrate (8), be placed on the miniature piezoelectric electrification structure silicon substrate (8)
The top electrode (2) and lower electrode (7) of composition a pair of electrodes and the generation being clipped between the top electrode (2) and lower electrode (7)
The piezoelectric film (6) of electric energy；The miniature piezoelectric electrification structure frame (9) has the miniature piezoelectric electrification structure cavity of pre-set dimension
(22), the inspection quality block (10) is located in the miniature piezoelectric electrification structure cavity (22) through the coupling framework (20)
It is coupled to miniature piezoelectric electrification structure silicon substrate (8) upper surface；The cantilevered MPEG structure further include respectively with it is described on
What electrode (2) and the lower electrode (7) connected powers on polar cushion (3) and lower electronic pads, described to power on polar cushion (3) and the lower electrode
Pad is connected on the conducting wire lead division (11) of the miniature piezoelectric electrification structure frame (9) by thin wire (4) by electrical energy transportation
Onto the external equipment outside self energizing device.
2. the miniature confession that the thermal energy according to claim 1 based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other
Energy device, which is characterized in that the upper and lower end face of each the p-type minisize thermoelectric arm (19) and the N-type minisize thermoelectric arm (16)
It is placed between the bottom vacuum chamber (21) and the top vacuum chamber (13), wherein the p-type minisize thermoelectric arm (19)
Upper end where hot end node and the hot end node of the N-type minisize thermoelectric arm (16) passes through the multicrystalline silicon substrate layer
(14) connect with the miniature thermo-electric generation structure silicon-based (8).
3. the miniature confession that the thermal energy according to claim 1 based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other
Energy device, which is characterized in that the multicrystalline silicon substrate layer (14) is structure silicon-based in the miniature thermo-electric generation as thermoelectric layer
(12) what the polysilicon of 0.6~0.8 μ m-thick deposited on bottom was formed.
4. the miniature confession that the thermal energy according to claim 1 based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other
Energy device, which is characterized in that the inner sidewall of the top vacuum chamber (13) passes through the pure silicic acid of low stress of 2.8~3.2 μ m-thicks
The sealing of salt crystal layer.
5. the miniature confession that the thermal energy according to claim 1 based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other
Energy device, which is characterized in that the oxide on cold end node equipped with 0.8~1.2 μ m-thick is as insulating layer；The protection metal
Layer (15) as heat dissipating layer is formed by the al deposition of 0.6~0.8 μ m-thick.
6. the miniature confession that the thermal energy according to claim 1 based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other
Can device, which is characterized in that the material of the inspection quality block (10) be inorganic material, organic material or organic material with it is inorganic
The composite material of material composition.
7. the miniature confession that the thermal energy according to claim 1 based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other
Energy device, which is characterized in that the material of the inspection quality block (10) is one of glass, metal, ceramics, rubber, plastics
Or more than one combination.
8. the miniature confession that the thermal energy according to claim 1 based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other
Can device, which is characterized in that the material of the miniature piezoelectric electrification structure frame (9) is PCB, ceramics, glass, metal, plastics,
One of or mixtures thereof silicon or more than one combination.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811210522.9A CN109217736A (en) | 2018-10-17 | 2018-10-17 | The miniature self energizing device that a kind of thermal energy based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811210522.9A CN109217736A (en) | 2018-10-17 | 2018-10-17 | The miniature self energizing device that a kind of thermal energy based on cantilevered MPEG and MTEG and vibrational energy are provided multiple forms of energy to complement each other |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110971142A (en) * | 2019-12-11 | 2020-04-07 | 大连海事大学 | Solar energy and wind energy multi-energy complementary small-sized energy collecting device based on TEG and PEG |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110971142A (en) * | 2019-12-11 | 2020-04-07 | 大连海事大学 | Solar energy and wind energy multi-energy complementary small-sized energy collecting device based on TEG and PEG |
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