CN109450287A - The miniature self energizing device that a kind of thermal energy based on MTEG and film Patting type TENG and wind energy are provided multiple forms of energy to complement each other - Google Patents
The miniature self energizing device that a kind of thermal energy based on MTEG and film Patting type TENG and wind energy are provided multiple forms of energy to complement each other Download PDFInfo
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- CN109450287A CN109450287A CN201811211353.0A CN201811211353A CN109450287A CN 109450287 A CN109450287 A CN 109450287A CN 201811211353 A CN201811211353 A CN 201811211353A CN 109450287 A CN109450287 A CN 109450287A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
Abstract
The present invention provides a kind of miniature self energizing device that the thermal energy based on MTEG and film Patting type TENG is provided multiple forms of energy to complement each other with wind energy, it is staggeredly coupled and is constituted by the film Patting type TENG structure at top and the MTEG structure of bottom, be extraneous load supplying into external circuit by the electrical energy transportation of collection；It is characterized in that, the film Patting type TENG structure at top is horizontal hollow columnar structures, it is connected by beating film with middle part scale copper and generates voltage as the dielectric film of friction nanometer generating structure, the other end of middle part scale copper and the conductive stand as circuit load being fixed between metal electrode is connected and fixed；The MTEG structure of bottom is respectively equipped with top vacuum chamber and bottom vacuum chamber by the thermocouple both ends that P, N-type minisize thermoelectric arm are constituted.The thermal loss as caused by above surrounding air and substrate can be effectively avoided in vacuum chamber of the invention, improves the temperature difference between cold and hot leaf；Accelerate to pat film swing raising generating efficiency, of simple structure and strong practicability by moving air simultaneously.
Description
Technical field
The present invention relates to thermo-electric generation self energizing technical fields, specifically, more particularly to a kind of based on MTEG and film
The miniature self energizing device that the thermal energy and wind energy of Patting type TENG is provided multiple forms of energy to complement each other.
Background technique
Wireless sensor network is a large amount of biographies interconnected using wireless telecommunications by being largely deployed in the zone of action
The network system of sensor node composition.With sensor technology, wireless communication technique, microelectric technique and Embedded Application technology
Reach its maturity, wireless sensor network rapidly develop.Using wireless sensor network, may be implemented in institute's deployment region
The monitoring of physical state, environmental aspect, biological information etc..Since wireless sensor network can be with rapid deployment, and have from group
It knits, high serious forgiveness and strong concealed advantage, wireless sensor network are applicable to hydrospace detection, environmental monitoring, ship monitoring
Equal applications.
Wireless sensor network used at present mainly uses battery to carry out work as power supply, due to wireless sensor
Network node has the characteristics that small in size, large number of, distribution is extensive, working environment is complicated, passes through periodic replacement battery
Come maintain sensor network continue working and it is unrealistic, therefore, the cruising ability of battery becomes limitation wireless sensor network
The principal element of node working life.It is often necessary to the battery of sensor be regularly replaced, so that sensor is able to maintain that normal work
Make, during replacing sensor battery, entire sensor needs dismantling connection again, the high, battery so as to cause repair cost
The problems such as lost of life, high temperature and environmental pollution.
In addition, with the development of medicine, medical treatment that pacemaker, artificial cochlea and biosensor etc. implant
Equipment is widely used in medical field, and gradually starts the detection and prevention applied to disease.These general Medical Devices
It is using battery powered, the capacity of battery becomes the principal element for limiting these medical equipment durable lifes.It is used up in battery capacity
Later, equipment can only be replaced by way of operation.While this mode improves Medical Devices use cost
Increase application risk.Therefore, in recent years, demand of the various circles of society to self energizing sensor is continuously increased.
Currently, the energy-provision way of miniature self energizing device mainly have solar power generation, thermo-electric generation, friction nanometer generating,
Chemical energy battery and fuel cell.It is short using chemical energy battery and fuel cell disposable supplying cell service life, and utilize the sun
The environment such as energy, the temperature difference, vibrational energy can provide energy for micro-system and may be implemented to power for a long time, not at any time with power density
Length and the characteristics of change.Using temperature difference caused by the solar energy in environment and the wind energy in environment, can distinguish
Simple energy converting structure is realized in the case where not using external power supply using thermoelectric material and friction nanometer generating material,
For the power supply of microsensor node.
To sum up, miniature temperature difference electricity generation device can play remarkable result in the environment with equilibrium temperature difference, and friction is received
Rice power generator can play remarkable result in vibration environment.Ship not only has more in normal/cruise, inside ship
High temperature heat source, such as exhaust gas, the high-temperature steam, high temperature jacket water of diesel engine discharge, and there is stronger wind energy on deck, it can
Vibration source as TENG structure.Temperature difference in these high temperature heat sources and cabin can provide sufficient temperature for MTEG device
Difference.Huge wind energy can provide sufficient vibration source for friction nanometer generating device.On this basis, miniature self energizing device top
The air flowed in the TENG structure in portion can also cool down the cold end node in MTEG structure, keep cold end node low temperature environment
While, the temperature difference of thermoelectric material hot and cold side is further increased, the generating efficiency of MTEG structure is improved.With shipping industry
4.0 push towards, and miniature temperature difference electricity generation device and friction nanometer generating device can be the microsensor net arranged on intelligent ship
Network node provides electric energy, promotes the realization early of unmanned ship, therefore, it is necessary to provide it is a kind of both integrate advantage oneself
Power supply device pushes the further implementation of China ocean power strategy.
Summary of the invention
Dismantling connection again is needed when replacing battery according to existing sensor set forth above and causes repair cost high, electric
The technical problems such as the pond lost of life, high temperature and environmental pollution, and a kind of thermal energy based on MTEG and film Patting type TENG is provided
The miniature self energizing device provided multiple forms of energy to complement each other with wind energy.The present invention mainly uses top for film Patting type TENG structure, utilizes cross
The hollow columnar structures set constitute air duct, are provided with the PTFE film that can be patted up and down under the action of the wind and scale copper is made
Dielectric film for the nanometer generating structure that rubs generates voltage；Bottom is MTEG structure, using novel double vacuum cavity configurations with pipe
Heat flow path is managed to obtain thermoelectric material hot and cold side maximum temperature difference, to improve thermo-electric generation efficiency, energy conversion rate is high；
One end that TENG structure is contacted with MTEG is located on its top vacuum chamber, and bottom vacuum chamber and top vacuum chamber can completely cut off heat
It is passed in the air duct of top by heat source, the part wind duct temperature can be made lower, self energizing device is complementary mutually, can utilize thermal energy simultaneously
It generates electricity with vibrational energy.
By taking intelligent ship is applied as an example, during the device of the invention is using the waste heat of ship pipeline and ship's navigation
Wind energy produces electricl energy, and provides electric power for ship microsensor, realizes ship sensing network self energizing.And it uses a kind of novel
Double vacuum cavity configurations obtain the maximum temperature difference of thermoelectric material hot and cold side to optimize heat flow path.Meanwhile miniature self energizing device
The air flowed in the TENG structure at top can cool down the cold end node in MTEG structure, keep cold end node low temperature environment
On the basis of, the temperature difference of thermoelectric material hot and cold side is further increased, the generating efficiency of MTEG structure is improved.Further more, top
Heat transfer difference caused by TENG structure is staggeredly coupled with bottom MTEG structure can increase top TENG structure ventilating duct inlet and outlet temperature
It is poor to spend, and further promotes the flowing of air in TENG structure ventilating duct, and then aggravates to pat the swing of film, to improve TENG
Generating efficiency.
The technological means that the present invention uses is as follows:
The miniature self energizing device that a kind of thermal energy based on MTEG and film Patting type TENG and wind energy are provided multiple forms of energy to complement each other, by pushing up
The film Patting type TENG structure in portion and the MTEG structure of bottom, which staggeredly couple, to be constituted, and the miniature self energizing device is by collection
Electrical energy transportation is extraneous load supplying into external circuit；It is characterized in that,
The film Patting type TENG structure at top is horizontal hollow columnar structures, comprising: is placed in frame upper and lower surface
Metal electrode, the scale copper being placed on the inside of metal electrode and the beating film that can be patted up and down under the action of the wind, the bat
The dielectric film generation voltage that film is connected as friction nanometer generating structure with middle part scale copper is thinned, the middle part scale copper
The other end and the conductive stile as circuit load being fixed between the metal electrode are connected and fixed；
The MTEG structure of bottom includes: that miniature thermo-electric generation is structure silicon-based, the miniature structure silicon-based top of thermo-electric generation
The multicrystalline silicon substrate layer of deposition, the multiple p-type minisize thermoelectric arms at array arrangement being deposited at the top of the multicrystalline silicon substrate layer
With N-type minisize thermoelectric arm, distinguish at the thermocouple both ends being made of the p-type minisize thermoelectric arm and the N-type minisize thermoelectric arm
Equipped with top vacuum chamber and bottom vacuum chamber, the cold end node of the p-type minisize thermoelectric arm and the N-type minisize thermoelectric arm it is cold
Leaf is contacted with the inner sidewall of the top vacuum chamber, and the heat radiating metal for heat dissipation is additionally provided on the top vacuum chamber
Layer.
In above structure, in the top vacuum chamber and bottom vacuum chamber of the setting of thermocouple both ends, the two vacuum chambers can be with
It is effectively prevented from the thermal loss as caused by above surrounding air and substrate, improved between cold and hot leaf to the maximum extent
The temperature difference.Heat radiating metallic layer on the vacuum chamber of top, the heat radiating metallic layer play heat spreading function, can accelerate the heat dissipation of cold end node.
Further, the upper and lower end face of each p-type minisize thermoelectric arm and the N-type minisize thermoelectric arm is placed in described
Between bottom vacuum chamber and the top vacuum chamber, wherein the hot end node of the p-type minisize thermoelectric arm and the N-type are miniature
Upper end where the hot end node of thermoelectric arm is structure silicon-based by the multicrystalline silicon substrate layer and the miniature thermo-electric generation
Connect.
Further, the multicrystalline silicon substrate layer is in the miniature structure silicon-based upper deposition of thermo-electric generation as thermoelectric layer
0.6~0.8 μ m-thick polysilicon formed.180keV and 80keV energy is injected into polysilicon respectively obtains N-type and p-type
Minisize thermoelectric arm.
Further, top and bottom vacuum chamber, the bottom are formed by etching silicon substrate and non-impurity-doped silicon crystal respectively
The inner sidewall of vacuum chamber is sealed by the low stress purified silicates crystal layer of 2.8~3.2 μ m-thicks.
Further, on cold end node equipped with 0.8~1.2 μ m-thick oxide be used as insulating layer, act on be make it is cold
Leaf is easier to be cooled by the ambient air while insulation；The heat radiating metallic layer is by 0.6~0.8 μm as heat dissipating layer
Thick al deposition forms.
Further, it is additionally provided with peripheral cavity on the outside of the MTEG structure, for preventing the miniature thermo-electric generation structure
Silicon substrate transmits heat to the cold end node of adjoining MTEG structure.
Further, the frame constitutes hollow columnar structures using PCB, metal, plastics or silicon material.
Further, the metal electrode includes top electrode and lower electrode, and the miniature self energizing device by setting respectively
It sets top electrode pad in the top electrode and the lower electrode and lower electrode pad will be by the top electrode and the lower electricity
The electrical energy transportation that pole is collected is extraneous load supplying into external circuit.
Compared with the prior art, each minisize thermoelectric arm is embedded between the vacuum chamber of bottom and top.Top vacuum chamber
It can guarantee that hot end node is not cooled down by cross-ventilation.On the contrary, cold end node is bonded with heat radiating metallic layer, by heat radiating metallic layer into
The heat dissipation of row cold end.Bottom and top cavity all uses condition of high vacuum degree to seal, and effect is reduced through due to air transmitted and convection current
Caused by heat loss.Design in this way, plane thermoelectric occasionally can get higher temperature difference in the vertical direction.In addition, dissipating
Metal layer is contacted with the lower electrode at the top of air duct in TENG structure, and the air flowed in air duct can reinforce cold junction point and surrounding is empty
The heat exchange of gas further increases thermoelectric material hot and cold side on the basis of keeping MTEG structure cold end node low temperature environment
The temperature difference improves the generating efficiency of MTEG structure.
In TENG structure at the top of device, pats film and be made of PTFE film, pass through middle part scale copper and conduction
Stile is connected and then is connected with upper and lower electrode, and upper and lower electrode and top, bottom scale copper is fixed by acrylic board and frame
The air duct for air circulation is together constituted with, under the action of the forces of the wind, the PTFE film for being placed in frame mid portion is swung up and down.PTFE
When film and top, bottom scale copper contact with each other, the opposite surface charge of symbol can be formed in two contact surfaces.When this two
A surface is due to external force and when separating, and centre will form a small the air gap, and PTFE film and top,
Induced electricity potential difference is formed between the scale copper of bottom.Due to certain negative by having between PTFE film and top, bottom scale copper
The conductive frame of load links together, and electrons flow to scale copper from PTFE film by conductive stile, formed one it is reversed
Potential difference comes equilibrium electrostatic field.When the air gap among two frictional layers is closed, disappeared by the potential difference that triboelectric charge is formed
It loses, electrons flow back.
The TENG structure at top is staggeredly coupled with the MTEG structure of bottom, the MTEG structural portion of top TENG structure and bottom
Tap touching.In the TENG structure and bottom MTEG structural top vacuum chamber top heat radiating metallic layer contact portion at top, silicon substrate
In bottom vacuum chamber and top vacuum chamber can completely cut off heat from heat source and pass in upper T ENG structure air duct, the part air duct medium temperature
Spend lower, and heat from heat source can pass to top TENG non-contact part by air, and temperature is higher in the part air duct, thus can
A temperature difference is generated at upper T ENG structure inlet and outlet both ends, can further promote the flowing of air, and then aggravate to pat thin
Film is swung, and then improves the generating efficiency of the MTEG structure of miniature self energizing device.
The present invention has the following characteristics that relative to the miniature self energizing device of tradition
1, heat transfer difference caused by the structure that top TENG is staggeredly coupled with bottom MTEG can increase top TENG structure
Ventilating duct out temperature is poor, further promotes the flowing of air in TENG structure ventilating duct, and aggravation is patted film and swung, in turn
Improve the generating efficiency of TENG.
2, be bonded film heat radiating metallic layer in the cold end of MTEG structure, in the heat radiating metallic layer and TENG structure under
Electrode contact.Moving air in TENG structure air duct can be on the basis for keeping MTEG structure cold end node to be in low temperature environment
On, accelerate the heat dissipation of MTEG structure cold end node, the temperature difference of further expansion MTEG structure thermoelectric material hot and cold side improves
The generating efficiency of MTEG structure.
3, the present invention is optimized heat flow path by top and bottom vacuum chamber and made between two nodes of thermocouple
The temperature difference maximizes.
4, it is provided with peripheral cavity in MTEG structure periphery region, effect is to prevent the silicon substrate of MTEG structure to neighbouring MTEG
The cold end node of structure transmits heat, and cold end node is kept to be in low temperature environment.
To sum up, apply the technical scheme of the present invention many disadvantages for solving and replacing generate in cell process in the prior art
End produces electricl energy supply external equipment electricity consumption by thermo-electric generation, wind energy and mechanical oscillation, substantially increases the continuation of the journey energy of power supply
The advantages that power has structure simple, low manufacture cost, practical, the composite can be widely applied to intelligence based on the above reasons
The multiple fields such as ship, ocean intelligent sensing network, ocean energy recycling.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to do simply to introduce, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of thermal energy based on MTEG and film Patting type TENG of the invention and the miniature confession that wind energy is provided multiple forms of energy to complement each other
The structural schematic diagram of energy device.
Fig. 2 is a kind of thermal energy based on MTEG and film Patting type TENG of the invention and the miniature confession that wind energy is provided multiple forms of energy to complement each other
The structural schematic diagram of temperature difference electricity generation device vacuum chamber at the top of energy device.
Fig. 3 is a kind of thermal energy based on MTEG and film Patting type TENG of the invention and the miniature confession that wind energy is provided multiple forms of energy to complement each other
The thermoelectricity even permutation schematic diagram of energy device.
In figure: 1, top electrode；2, top scale copper；3, frame；4, bottom scale copper；5, lower electrode；6, N-type minisize thermoelectric
Arm；7, p-type minisize thermoelectric arm；8, multicrystalline silicon substrate layer；9, bottom vacuum chamber；10, miniature thermo-electric generation is structure silicon-based；11, it leads
Electric stile；12, middle part scale copper；13, film is patted；14, be rigidly connected frame；15, heat radiating metallic layer；16, hot end node；17,
Cold end node；18, top vacuum chamber.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.It is real to the description of at least one exemplary embodiment below
It is merely illustrative on border, never as to the present invention and its application or any restrictions used.Based on the reality in the present invention
Example is applied, every other embodiment obtained by those of ordinary skill in the art without making creative efforts all belongs to
In the scope of protection of the invention.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to exemplary embodiments of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
Unless specifically stated otherwise, positioned opposite, the digital table of the component and step that otherwise illustrate in these embodiments
It is not limited the scope of the invention up to formula and numerical value.Simultaneously, it should be clear that for ease of description, each portion shown in attached drawing
The size divided not is to draw according to actual proportionate relationship.Technology known for person of ordinary skill in the relevant, side
Method and equipment may be not discussed in detail, but in the appropriate case, and the technology, method and apparatus should be considered as authorizing explanation
A part of book.In shown here and discussion all examples, appointing should be construed as merely illustratively to occurrence, and
Not by way of limitation.Therefore, the other examples of exemplary embodiment can have different values.It should also be noted that similar label
Similar terms are indicated in following attached drawing with letter, therefore, once it is defined in a certain Xiang Yi attached drawing, then subsequent attached
It does not need that it is further discussed in figure.
In the description of the present invention, it is to be understood that, the noun of locality such as " front, rear, top, and bottom, left and right ", " it is laterally, vertical,
Vertically, orientation or positional relationship indicated by level " and " top, bottom " etc. is normally based on orientation or position shown in the drawings and closes
System, is merely for convenience of description of the present invention and simplification of the description, in the absence of explanation to the contrary, these nouns of locality do not indicate that
It must have a particular orientation or be constructed and operated in a specific orientation with the device or element for implying signified, therefore cannot manage
Solution is limiting the scope of the invention: the noun of locality " inside and outside " refers to inside and outside the profile relative to each component itself.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, being described as if the device in attached drawing is squeezed " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under its device or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also be positioned with other different modes and (is rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
In addition, it should be noted that, limiting components using the words such as " first ", " second ", it is only for be convenient for
Corresponding components are distinguished, do not have Stated otherwise such as, there is no particular meanings for above-mentioned word, therefore should not be understood as to this
The limitation of invention protection scope.
As shown in Figure 1-3, the present invention provides one kind to be based on miniature thermo-electric generation (Micro Theromoelectric
Generator, MTEG) and film Patting type friction nanometer generating (TENG) thermal energy and the miniature self energizing provided multiple forms of energy to complement each other of wind energy
Device is staggeredly coupled by the film Patting type TENG structure at top and the MTEG structure of bottom and is constituted, and is sensed with being applied to ship
For network, Patting type friction nanometer generating structure and miniature thermo-electric generation structure are connected by rigid connection frame 14, are allowed to structure
Friction nanometer generating structure is connect with ship side two sides at rigid structure and using fixing bolt.The nanometer generating structure that rubs is collected
Wind power generation above deck.Simultaneously whole device be fixed on ship hot-fluid pipeline, the silicon substrate of miniature thermo-electric generation structure with
Ship hot-fluid pipeline contact, miniature thermo-electric generation structure utilize pipeline cogeneration.The electric energy that upper and lower two-part structure generates is logical
Conducting wire extension is crossed to convey and power for microsensor network node outward.
The MTEG structure of bottom includes: that miniature thermo-electric generation is structure silicon-based 10, the miniature thermo-electric generation structure silicon-based 10
The multicrystalline silicon substrate layer 8 of top deposition is deposited on the multiple miniature at the p-type of array arrangement of 14 top of multicrystalline silicon substrate layer
Thermoelectric arm 7 and N-type minisize thermoelectric arm 6, in the thermoelectricity being made of the P type minisize thermoelectric arm 7 and the N-type minisize thermoelectric arm 6
Even both ends are respectively equipped with top vacuum chamber 18 and bottom vacuum chamber 9, the two vacuum chambers and can be effectively avoided by surrounding air
With substrate above caused by thermal loss, to improve the temperature difference between cold and hot leaf to the maximum extent；The p-type minisize thermoelectric
The cold end node of the cold end node of arm 7 and the N-type minisize thermoelectric arm 6 is contacted with the inner sidewall of the top vacuum chamber 18, institute
The heat radiating metallic layer 15 being additionally provided on the vacuum chamber 18 of top for heat dissipation is stated, which plays heat spreading function, can accelerate
The heat dissipation of cold end node 17.Peripheral cavity in device peripheral region, for prevent the miniature thermo-electric generation structure silicon-based 10 to
The cold end node of adjoining MTEG structure transmits heat, reduces the heat lost by multicrystalline silicon substrate layer 8.
The present invention is based on miniature thermo-electric generation and film Patting type friction nanometer generating thermal energy provide multiple forms of energy to complement each other with wind energy
Miniature self energizing device in, miniature thermo-electric generation structure silicon-based 10 and ship hot-fluid pipeline contact, silicon-based devices play transmitting
The effect of heat source, lower electrode of 15 side of heat radiating metallic layer as heat-sink shell and the film Patting type at top friction nanometer generating structure
It is in contact, accelerates the heat dissipation of cold end node by the air flowed in air duct.Micro thermocouple is tied using cold end node 17, hot end
The temperature difference between point 16 produces electricl energy, and the electric energy of generation is conveyed outward by conducting wire extension and is microsensor network section
Point power supply.
In view of the requirement of thin film technique thermoelectric material thickness, film thermocouple is arranged in multicrystalline silicon substrate layer the present invention
8 upper surface.Basic supporter of the multicrystalline silicon substrate 8 as thermoelectric structure has specific width W1, length L1 and thickness
T1。
Heat from the bottom of device to top transmit, in order to the cold end node 17 of micro thermocouple, hot end node 16 it
Between obtain the biggish temperature difference, need to guide hot-fluid, make longitudinal flow of the hot-fluid along micro thermocouple, reduce thermal loss.It compares
In the prior art, invention enhances the heat insulation capacity of MTEG structural top, top vacuum chamber 18 can avoid hot end node 16
Heat dissipation.In miniature self energizing device proposed by the invention, top vacuum chamber 18 and bottom vacuum chamber 9 are introduced to optimize hot flowpath
Diameter reduces thermal loss.
It is true that the upper and lower end face of each p-type minisize thermoelectric arm 7 and the N-type minisize thermoelectric arm 6 is placed in the bottom
Between cavity 9 and the top vacuum chamber 18, wherein the hot end node and the miniature heat of the N-type of the p-type minisize thermoelectric arm 7
Upper end where the hot end node of electric arm 6 is structure silicon-based by the multicrystalline silicon substrate layer 8 and the miniature thermo-electric generation
10 connect.Top vacuum chamber 18 can avoid hot end node 16 and be cooled down by cross-ventilation.On the contrary, cold end node 17 and heat radiating metallic layer
15 fit, and strengthen heat dissipation by the air flowed in the air duct in the TENG structure of top.Bottom vacuum chamber 9 and the top are true
Cavity 18 is all sealed using condition of high vacuum degree, and effect is to reduce to pass through the heat loss as caused by air transmitted and convection current.Pass through this
The design of sample, plane thermoelectric occasionally can get biggish temperature difference in the vertical direction, improve the generating efficiency of MTEG structure.
Due to the thermal conductivity with higher of multicrystalline silicon substrate layer 8, for being located at the thermocouple at device edge, multicrystalline silicon substrate
The temperature of layer 8 is higher than the temperature of cold end node 16, this sub-fraction heat that will lead to multicrystalline silicon substrate layer 8 is passed to positioned at device
The cold end node 17 at edge.17 temperature of cold end node of micro thermocouple increases, between hot end node 16 and cold end node 17
Temperature difference will reduce, and reduce generating efficiency.
It is mutual in the thermal energy of the invention based on miniature thermo-electric generation and film Patting type friction nanometer generating and wind energy multipotency
In the miniature self energizing device mended, the cavity (not shown) of surrounding is on miniature self energizing device miniature thermo-electric generation structure side
Edge, by being isolated with cold end node 17 for multicrystalline silicon substrate layer 8, to avoid positioned at the miniature of miniature thermo-electric generation structural edge
Thermocouple performance is influenced by the heat of multicrystalline silicon substrate layer 8 around.
The miniature temperature difference electricity generation device of the present invention is made by the following method:
Firstly, depositing 0.6~0.8 μ m-thick on miniature thermo-electric generation structure silicon-based 10 with Low Pressure Chemical Vapor Deposition
Polysilicon as thermoelectric layer.Then, dry etching is carried out to multicrystalline silicon substrate layer 8, obtains thermoelectric arm figure.Again to poly silicon layer
Phosphorus and boron are injected separately into different energy to generate N-type minisize thermoelectric arm 6 and p-type minisize thermoelectric arm 7.
Deposited aluminum layer connects p-type and N-type thermoelectric arm.It is logical in order to optimize the heat in the miniature self energizing device of sensor network
Direction is measured, bottom vacuum chamber 9 and top vacuum chamber 18 are created.Pass through SF6And C4F8Gas utilizes deep reaction ion etching side
The method groove that etching depth is 14~16 μm on miniature thermo-electric generation structure silicon-based 10, then uses SF6Inside grooves are carried out
Isotropic etching, to remove the silicon between groove and generate bottom vacuum chamber 9.Then, with the low stress of 2.8~3.2 μ m-thicks
Purified silicates crystal sealed bottom vacuum chamber 9.
In order to obtain top vacuum chamber 18, the pure silicon crystal that will be patterned into is covered as sacrificial layer, and on sacrificial layer
The Si of nanoscale plasma chemical vapor phase deposition3N4And amorphous silicon.Etching width by nitride and amorphous silicon layer is 0.8
~1.2 μm, the small etched hole that length is 2.8~3.2 μm.Hereafter, silicon crystal is impregnated to 20 points in buffer oxide etch agent
Clock removes sacrificial layer by etch-hole.Finally, the sealing of Kong Yong low stress pure silicon crystal is sacrificed.In order to make cold end node 17 more
It is easy to retain the oxide of 0.8~1.2 μ m-thick on cold end node 17 as insulating layer by the cooling of heat radiating metallic layer 15.Most
Afterwards, using the al deposition of 0.6~0.8 μ m-thick to apparatus surface as heat dissipating layer.
The film Patting type TENG structure at top is horizontal hollow columnar structures, comprising: is placed in 3 upper and lower surface of frame
Metal electrode, the scale copper being placed on the inside of metal electrode and the beating film 13 that can be patted up and down under the action of the wind, institute
It states and pats the dielectric film generation voltage that film 13 is connected as friction nanometer generating structure with middle part scale copper 12, the middle part
The other end of scale copper 12 and the conductive stile 11 as circuit load being fixed between the metal electrode are connected and fixed；Institute
Stating metal electrode includes top electrode 1 and lower electrode 5, and the miniature self energizing device is by being separately positioned on 1 He of top electrode
Top electrode pad and lower electrode pad on the lower electrode 5 is defeated by the electric energy collected by the top electrode 1 and the lower electrode 5
Being sent in external circuit is extraneous load supplying.
The scale copper includes the top scale copper 2 fixed with 1 phase of top electrode, the fixed thin copper in bottom with lower 5 phase of electrode
Piece 4 and the middle part scale copper 12 being connected with beating film 13.Film is patted to be made of polytetrafluoroethylene (PTFE) (PTFE).
In the TENG structure at top, PTFE pats film 13 and swings up and down composition film Patting type under the action of the forces of the wind
Structure.In this configuration, the wall surface material using acrylic board as hollow columnar structures, i.e., with acrylic board by metal electrode
It is fixed on the frame 3 with scale copper；Wherein, frame 3 constitutes hollow columnar structures using the materials such as PCB, metal, plastics, silicon
Basic framework.Frame 3 and wall surface collectively form current path.
In TENG structure, pats film 13 and be connected with conductive stile 11 thus and upper and lower surface by middle part scale copper 12
Metal electrode be connected, conductive stile 11 constitutes (conduction stile shown in Fig. 1 11, the air duct of air circulation with acrylic board
In the side of frame, it is used to support top electrode 1 and lower electrode 5, constitutes conductive path), under the action of the forces of the wind, PTFE pats thin
Film 13 is swung up and down, and when PTFE pats film 13 and middle part scale copper 12 contacts with each other, can form band in PTFE film surface
Electronegative surface charge, at top, scale copper 2 or 4 surface of bottom scale copper generate positively charged charge.When this PTFE is patted
Film 13 and the surface of top scale copper 2 or bottom scale copper 4 when wind-force is acted on and is separated, PTFE pat film 13 and
It will form a small the air gap, and the shape between PTFE film and scale copper among top scale copper 2 or bottom scale copper 4
At induced electricity potential difference.Due to being linked together between PTFE film and scale copper by the conductive stile 11 with a fixed load,
Electrons flow to scale copper from PTFE film by conductive stile 11, form a reversed potential difference and come equilibrium electrostatic field.When
When the air gap among two frictional layers is closed, disappeared by the potential difference that triboelectric charge is formed, electrons flow back.Electronics
Mobile generation electric current between the middle part scale copper 12 and top scale copper 2 or bottom scale copper 4 as electrode.It is produced
Electric current external circuit is connected to by top electrode 1 and lower electrode 5, for extraneous load supplying.
The effect for patting film 13 is to swing up and down under the action of the forces of the wind, is connect with top scale copper 2 or bottom scale copper 4
Touching generates positive and negative charge since contact electrification acts on scale copper and pats film surface, to form potential difference.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (8)
1. the miniature self energizing device that a kind of thermal energy based on MTEG and film Patting type TENG and wind energy are provided multiple forms of energy to complement each other, by top
Film Patting type TENG structure and the MTEG structure of bottom staggeredly couple and constitute, the miniature self energizing device is by the electricity of collection
Can be transported in external circuit is extraneous load supplying；It is characterized in that,
The film Patting type TENG structure at top is horizontal hollow columnar structures, comprising: is placed in the gold of frame (3) upper and lower surface
Belong to electrode, the scale copper being placed on the inside of metal electrode and the beating film (13) that can be patted up and down under the action of the wind, it is described
Pat film (13) be connected with middle part scale copper (12) as rub nanometer generating structure dielectric film generation voltage, it is described in
The other end of portion's scale copper (12) and the conductive stile (11) as circuit load being fixed between the metal electrode connect
It is fixed；
The MTEG structure of bottom includes: that miniature thermo-electric generation structure silicon-based (10), the miniature thermo-electric generation are structure silicon-based (10)
The multicrystalline silicon substrate layer (8) of top deposition, the multiple p-types at array arrangement being deposited at the top of the multicrystalline silicon substrate layer (14)
Minisize thermoelectric arm (7) and N-type minisize thermoelectric arm (6), by the p-type minisize thermoelectric arm (7) and the N-type minisize thermoelectric arm
(6) the thermocouple both ends constituted are respectively equipped with top vacuum chamber (18) and bottom vacuum chamber (9), the p-type minisize thermoelectric arm (7)
Cold end node and the cold end node of the N-type minisize thermoelectric arm (6) contacted with the inner sidewall of the top vacuum chamber (18), institute
State the heat radiating metallic layer (15) being additionally provided on top vacuum chamber (18) for heat dissipation.
2. the thermal energy according to claim 1 based on MTEG and film Patting type TENG and wind energy provide multiple forms of energy to complement each other it is miniature from
Power supply device, which is characterized in that the upper and lower end face of each the p-type minisize thermoelectric arm (7) and the N-type minisize thermoelectric arm (6)
It is placed between the bottom vacuum chamber (9) and the top vacuum chamber (18), wherein the heat of the p-type minisize thermoelectric arm (7)
Upper end where leaf and the hot end node of the N-type minisize thermoelectric arm (6) by the multicrystalline silicon substrate layer (8) with
The miniature thermo-electric generation structure silicon-based (10) connects.
3. the thermal energy according to claim 1 or 2 based on MTEG and film Patting type TENG is provided multiple forms of energy to complement each other micro- with wind energy
Type self energizing device, which is characterized in that the multicrystalline silicon substrate layer (8) is in the miniature thermo-electric generation structure as thermoelectric layer
What the polysilicon of 0.6~0.8 μ m-thick deposited in silicon substrate (10) was formed.
4. the thermal energy according to claim 3 based on MTEG and film Patting type TENG and wind energy provide multiple forms of energy to complement each other it is miniature from
Power supply device, which is characterized in that the inner sidewall of the bottom vacuum chamber (9) passes through the pure silicic acid of low stress of 2.8~3.2 μ m-thicks
The sealing of salt crystal layer.
5. the thermal energy according to claim 3 based on MTEG and film Patting type TENG and wind energy provide multiple forms of energy to complement each other it is miniature from
Power supply device, which is characterized in that the oxide on cold end node equipped with 0.8~1.2 μ m-thick is as insulating layer；The heat dissipation gold
Belonging to layer (15) as heat dissipating layer is formed by the al deposition of 0.6~0.8 μ m-thick.
6. the thermal energy according to claim 1 based on MTEG and film Patting type TENG and wind energy provide multiple forms of energy to complement each other it is miniature from
Power supply device, which is characterized in that peripheral cavity is additionally provided on the outside of the MTEG structure, for preventing the miniature thermo-electric generation knot
Structure silicon substrate (10) transmits heat to the cold end node of adjoining MTEG structure.
7. the thermal energy according to claim 1 based on MTEG and film Patting type TENG and wind energy provide multiple forms of energy to complement each other it is miniature from
Power supply device, which is characterized in that the frame (3) constitutes hollow columnar structures using PCB, metal, plastics or silicon material.
8. the thermal energy according to claim 1 based on MTEG and film Patting type TENG and wind energy provide multiple forms of energy to complement each other it is miniature from
Power supply device, which is characterized in that the metal electrode includes top electrode (1) and lower electrode (5), and the miniature self energizing device is logical
Cross be separately positioned on the top electrode (1) and top electrode pad on the lower electrode (5) and lower electrode pad will be by described
The electrical energy transportation that electrode (1) and the lower electrode (5) are collected is extraneous load supplying into external circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811211353.0A CN109450287A (en) | 2018-10-17 | 2018-10-17 | The miniature self energizing device that a kind of thermal energy based on MTEG and film Patting type TENG and wind energy are provided multiple forms of energy to complement each other |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811211353.0A CN109450287A (en) | 2018-10-17 | 2018-10-17 | The miniature self energizing device that a kind of thermal energy based on MTEG and film Patting type TENG and wind energy are provided multiple forms of energy to complement each other |
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Application publication date: 20190308 |