CN109216464A - A kind of carbide MOS devices with heterojunction diode - Google Patents
A kind of carbide MOS devices with heterojunction diode Download PDFInfo
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- CN109216464A CN109216464A CN201811280695.8A CN201811280695A CN109216464A CN 109216464 A CN109216464 A CN 109216464A CN 201811280695 A CN201811280695 A CN 201811280695A CN 109216464 A CN109216464 A CN 109216464A
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- type semiconductor
- conductive type
- region
- semiconductor
- mos devices
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Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 91
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 32
- 210000000746 body region Anatomy 0.000 claims description 19
- 125000005842 heteroatom Chemical group 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 9
- 239000011229 interlayer Substances 0.000 claims 1
- 238000011084 recovery Methods 0.000 abstract description 2
- 238000011982 device technology Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses a kind of carbide MOS devices with heterojunction diode, belong to semiconductor power device technology field.The present invention reduces reverse recovery charge and improves the reliability of silicon carbide by introducing heterojunction diode, the feature low using its cut-in voltage, single polarity current is conductive while reducing device and being in the conduction loss of backward dioded working condition.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of carbide MOS devices with heterojunction diode.
Background technique
Metal-oxide-semicondutor (abbreviation MOS) power device made using carbofrax material can bear height
It is quickly switched while voltage.In recent years, due to the development of power electronic technique, carbide MOS devices are for electric power
The high efficiency of electronic equipment, miniaturization bring profound influence.Currently, the anti-paralleled diode master of silicon carbide MOSFET in the application
To come from its PN junction.Since the higher forbidden bandwidth of silicon carbide is higher, PN junction diode positive cut-in voltage with higher
(VF > 2.7V), so that device is high using conduction loss in the process.Meanwhile the because higher basal plane defects of silicon carbide
(Basal Plane Defects), silicon carbide device are easy to produce when Bipolar current is connected and stack dislocation (Stacking
Faults), and then increase the conducting resistance of silicon carbide, leakage current and influence device reliability.
Summary of the invention
In view of the drawbacks of the prior art, the present invention provides a kind of carbide MOS devices with heterojunction diode.This hair
It is bright by introducing heterojunction diode, the feature low using its cut-in voltage, single polarity current is conductive reducing device anti-
While conduction loss when to diode conduction, reduces reverse recovery charge and improve the reliability of silicon carbide.
The present invention provides a kind of carbide MOS devices with heterojunction diode, comprising:
Base semiconductor area [001], front and back are successively arranged the first conductive type semiconductor drift region [002] and first
Electrode [013]；
The top central of first conductive type semiconductor drift region [002] is equipped with gate electrode [007], gate electrode [007] and drift
Gate dielectric layer [006] is equipped between area [002]；
It is equipped with inside the first conductive type semiconductor drift region [002] of gate electrode [007] two sides and connects with gate dielectric layer [006]
Second conductive type semiconductor channel body region [003] of touching；
Second conductive type semiconductor channel body region [003] inner top layer be equipped with simultaneously with gate dielectric layer [006] and Ohmic contact
The first conductive type semiconductor heavily doped region [004] that layer [010] is in contact；
Second conductive type semiconductor channel body region [003] inner top layer is equipped with the to be in contact with ohmic contact layer [010]
Two conductive type semiconductor heavily doped regions [005]；
It is set at the top of the first conductive type semiconductor drift region [002] on the outside of second conductive type semiconductor channel body region [003]
There is the hetero semiconductor region [008] being in contact with the first conductive type semiconductor drift region [002]；
First conductive type semiconductor heavily doped region [004] and the second conductive type semiconductor heavily doped region [005] pass through ohm
Contact layer [010] and second electrode [012] equipotential；
Hetero semiconductor region [008] and second electrode [012] equipotential；
Dielectric layer [009] is equipped between second electrode [012] and gate electrode [007] to be isolated.
Wherein, the base semiconductor area [001], the first conductive type semiconductor drift region [002], the second conductive-type
Type semiconductor channel body area [003], the first conductive type semiconductor heavily doped region [004], the second conductive type semiconductor are heavily doped
The material of miscellaneous area [005] is silicon carbide.
Wherein, it is contacted at the top of the first conductive type semiconductor drift region [002] with hetero semiconductor region [008]
Place is equipped with the second conductive type semiconductor Resistance with the second conductive type semiconductor channel body region [003] separately
[103]。
Further, a kind of carbide MOS devices with heterojunction diode include single or multiple second
Conductive type semiconductor Resistance [103].
Wherein, the second conductive type semiconductor Resistance [103] and the second conductive type semiconductor channel body region
[003] material having the same and dopant profiles.
Wherein, first conductive type semiconductor is N-type semiconductor, and the second conductive type semiconductor is that p-type is partly led
Body.
Wherein, first conductive type semiconductor is P-type semiconductor, and the second conductive type semiconductor is that N-type is partly led
Body.
Wherein, the conduction type in the base semiconductor area [001] can be the first conduction type and the second conductive-type
One of type.
Wherein, the material of the hetero semiconductor region [008] be carbon, silicon, germanium at least one of element composition
Semiconductor material, forbidden bandwidth are different from silicon carbide.
Detailed description of the invention
Fig. 1 is a kind of one embodiment of carbide MOS devices with heterojunction diode.The MOS device is anti-
When to diode current flow, hetero semiconductor region [008] and drift region [002] forms heterojunction diode, makes the first conduction
The carrier of type can flow to second electrode [012] from first electrode [013], so that monopolar current conduction is realized, to reduce
The conduction loss and switching loss of device, while the stacking dislocation of silicon carbide being inhibited to grow (Stacking Faults), it improves
Reliability.
Fig. 2 is a kind of one embodiment of carbide MOS devices with heterojunction diode.The MOS device is into one
Step includes one or more the second conductive type semiconductor Resistance [103].Second conductive type semiconductor Resistance
[103] leakage current of the heterojunction diode of the MOS device when high pressure is reverse-biased can be made to be inhibited.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments and with reference to attached
Figure, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only to explain this hair
It is bright, it is not intended to limit the present invention.
In one embodiment of the present of invention, the base semiconductor area [001] is N-type silicon carbide, front and back
It is successively arranged N-type silicon carbide drift region [002] and drain electrode [013].
In one embodiment of the present of invention, the top central of the N-type silicon carbide drift region [002] is equipped with gate electrode
[007], gate dielectric layer [006] is equipped between gate electrode [007] and drift region [002].
In one embodiment of the present of invention, the N-type silicon carbide drift region [002] of the gate electrode [007] two sides is internal
Equipped with the p-type silicon carbide channel body region [003] being in contact with gate dielectric layer [006].
In one embodiment of the present of invention, described p-type silicon carbide channel body region [003] inner top layer is equipped with and gate medium
The N-type silicon carbide heavily doped region [004] that layer [006] is in contact.
In one embodiment of the present of invention, p-type silicon carbide channel body region [003] inner top layer is carbonized equipped with p-type
Silicon heavily doped region [005].
N-type silicon carbide drift in one embodiment of the present of invention, on the outside of the p-type silicon carbide channel body region [003]
The hetero semiconductor region [008] being in contact with N-type silicon carbide drift region [002] is equipped at the top of area [002].
In one embodiment of the present of invention, the N-type silicon carbide heavily doped region [004] and p-type silicon carbide heavily doped region
[005] pass through ohmic contact layer [010] and source electrode [012] equipotential.
In one embodiment of the present of invention, the hetero semiconductor region [008] passes through opening [011] and source electrode
[012] it is in contact, and equipotential therewith.
In one embodiment of the present of invention, dielectric layer is equipped between the source electrode [012] and gate electrode [007]
[009] it is isolated.
In one embodiment of the present of invention, at the top of the N-type silicon carbide drift region [002] and hetero semiconductor region
[008] contact position is equipped with the p-type silicon carbide Resistance [103] with p-type silicon carbide channel body region [003] separately.
In one embodiment of the present of invention, a kind of carbide MOS devices with heterojunction diode include single
A p-type silicon carbide Resistance [103].
In one embodiment of the present of invention, the p-type silicon carbide Resistance [103] and p-type silicon carbide channel body region
[003] there are dopant profiles.
In one embodiment of the present of invention, the material of the hetero semiconductor region [008] is silicon materials, forbidden bandwidth
About 1.05eV, less than the forbidden bandwidth of silicon carbide.
Claims (9)
1. a kind of carbide MOS devices with heterojunction diode characterized by comprising
Base semiconductor area [001], front and back are successively arranged the first conductive type semiconductor drift region [002] and first
Electrode [013]；
The top central of first conductive type semiconductor drift region [002] is equipped with gate electrode [007], gate electrode [007] and drift
Gate dielectric layer [006] is equipped between area [002]；
It is equipped with inside the first conductive type semiconductor drift region [002] of gate electrode [007] two sides and connects with gate dielectric layer [006]
Second conductive type semiconductor channel body region [003] of touching；
Second conductive type semiconductor channel body region [003] inner top layer be equipped with simultaneously with gate dielectric layer [006] and Ohmic contact
The first conductive type semiconductor heavily doped region [004] that layer [010] is in contact；
Second conductive type semiconductor channel body region [003] inner top layer is equipped with the to be in contact with ohmic contact layer [010]
Two conductive type semiconductor heavily doped regions [005]；
It is set at the top of the first conductive type semiconductor drift region [002] on the outside of second conductive type semiconductor channel body region [003]
There is the hetero semiconductor region [008] being in contact with the first conductive type semiconductor drift region [002]；
First conductive type semiconductor heavily doped region [004] and the second conductive type semiconductor heavily doped region [005] pass through ohm
Contact layer [010] and second electrode [012] equipotential；
Hetero semiconductor region [008] and second electrode [012] equipotential；
Interlayer dielectric layer [009] is equipped between second electrode [012] and gate electrode [007] to be isolated.
2. a kind of carbide MOS devices with heterojunction diode according to claim 1, it is characterised in that: described
Base semiconductor area [001], the first conductive type semiconductor drift region [002], the second conductive type semiconductor channel body region
[003], the first conductive type semiconductor heavily doped region [004], the second conductive type semiconductor heavily doped region [005] material be
Silicon carbide.
3. a kind of carbide MOS devices with heterojunction diode according to claim 1, further comprise: in institute
With hetero semiconductor region [008] contact position at the top of the first conductive type semiconductor drift region [002] stated, it is equipped with and the second conduction
The the second conductive type semiconductor Resistance [103] of type semiconductor channel body region [003] separately.
4. a kind of carbide MOS devices with heterojunction diode according to claim 3, it is characterised in that: described
A kind of carbide MOS devices with heterojunction diode include single or multiple second conductive type semiconductors Resistance
[103]。
5. the second conductive type semiconductor according to claim 3 Resistance [103], it is characterised in that: described second
It conductive type semiconductor Resistance [103] and the second conductive type semiconductor channel body region [003] material having the same and mixes
Miscellaneous distribution.
6. the first conductive type semiconductor according to any one of claims 1 to 5 and the second conductive type semiconductor, special
Sign is: first conductive type semiconductor is N-type semiconductor, and the second conductive type semiconductor is P-type semiconductor.
7. the first conductive type semiconductor according to any one of claims 1 to 5 and the second conductive type semiconductor, special
Sign is: first conductive type semiconductor is P-type semiconductor, and the second conductive type semiconductor is N-type semiconductor.
8. a kind of carbide MOS devices with heterojunction diode according to claim 1, it is characterised in that: described
Base semiconductor area [001] conduction type can be the first conduction type and the second conduction type one of.
9. a kind of carbide MOS devices with heterojunction diode according to claim 1, it is characterised in that: described
Hetero semiconductor region [008] material be carbon, silicon, germanium at least one of element composition semiconductor material, forbidden band
Width is different from silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811280695.8A CN109216464A (en) | 2018-10-30 | 2018-10-30 | A kind of carbide MOS devices with heterojunction diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811280695.8A CN109216464A (en) | 2018-10-30 | 2018-10-30 | A kind of carbide MOS devices with heterojunction diode |
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| Publication Number | Publication Date |
|---|---|
| CN109216464A true CN109216464A (en) | 2019-01-15 |
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| CN201811280695.8A Pending CN109216464A (en) | 2018-10-30 | 2018-10-30 | A kind of carbide MOS devices with heterojunction diode |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005175357A (en) * | 2003-12-15 | 2005-06-30 | Nissan Motor Co Ltd | Semiconductor device and method of manufacturing the same |
| US20060118818A1 (en) * | 2004-12-02 | 2006-06-08 | Nissan Motor Co., Ltd. | Semiconductor device |
| CN1925158A (en) * | 2005-08-30 | 2007-03-07 | 日产自动车株式会社 | Semiconductor device |
| JP2011199141A (en) * | 2010-03-23 | 2011-10-06 | Nissan Motor Co Ltd | Semiconductor device |
| JP2012004197A (en) * | 2010-06-15 | 2012-01-05 | Nissan Motor Co Ltd | Semiconductor device and method of manufacturing the same |
| CN208985989U (en) * | 2018-10-30 | 2019-06-14 | 派恩杰半导体（杭州）有限公司 | A kind of carbide MOS devices with heterojunction diode |
-
2018
- 2018-10-30 CN CN201811280695.8A patent/CN109216464A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005175357A (en) * | 2003-12-15 | 2005-06-30 | Nissan Motor Co Ltd | Semiconductor device and method of manufacturing the same |
| US20060118818A1 (en) * | 2004-12-02 | 2006-06-08 | Nissan Motor Co., Ltd. | Semiconductor device |
| CN1925158A (en) * | 2005-08-30 | 2007-03-07 | 日产自动车株式会社 | Semiconductor device |
| JP2011199141A (en) * | 2010-03-23 | 2011-10-06 | Nissan Motor Co Ltd | Semiconductor device |
| JP2012004197A (en) * | 2010-06-15 | 2012-01-05 | Nissan Motor Co Ltd | Semiconductor device and method of manufacturing the same |
| CN208985989U (en) * | 2018-10-30 | 2019-06-14 | 派恩杰半导体（杭州）有限公司 | A kind of carbide MOS devices with heterojunction diode |
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Country or region after: China Address after: A160, Building 1, No. 316 Binhai Fourth Road, Qianwan New District, Ningbo City, Zhejiang Province Applicant after: Painjie Semiconductor (Zhejiang) Co.,Ltd. Address before: Room D3204, 3rd Floor, Building 1 (North), No. 368 Liuhe Road, Puyan Street, Binjiang District, Hangzhou City, Zhejiang Province Applicant before: PN JUNCTION SEMICONDUCTOR (HANGZHOU) Co.,Ltd. Country or region before: China |
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