CN208985989U - A kind of carbide MOS devices with heterojunction diode - Google Patents
A kind of carbide MOS devices with heterojunction diode Download PDFInfo
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- CN208985989U CN208985989U CN201821773206.8U CN201821773206U CN208985989U CN 208985989 U CN208985989 U CN 208985989U CN 201821773206 U CN201821773206 U CN 201821773206U CN 208985989 U CN208985989 U CN 208985989U
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- type semiconductor
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- heterojunction diode
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- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 34
- 210000000746 body region Anatomy 0.000 claims description 17
- 125000005842 heteroatom Chemical group 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 9
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 238000011084 recovery Methods 0.000 abstract description 2
- 238000011982 device technology Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The utility model discloses a kind of carbide MOS devices with heterojunction diode, belong to semiconductor power device technology field.The utility model is by introducing heterojunction diode, the feature low using its cut-in voltage, single polarity current is conductive, while reducing device and being in the conduction loss of backward dioded working condition, reduces reverse recovery charge and improve the reliability of silicon carbide.
Description
Technical field
The utility model relates to technical field of semiconductors, and in particular to a kind of silicon carbide mos with heterojunction diode
Device.
Background technique
Metal-oxide-semicondutor (abbreviation MOS) power device made using carbofrax material can bear height
It is quickly switched while voltage.In recent years, due to the development of power electronic technique, carbide MOS devices are for electric power
The high efficiency of electronic equipment, miniaturization bring profound influence.Currently, the anti-paralleled diode master of silicon carbide MOSFET in the application
To come from its PN junction.Since the higher forbidden bandwidth of silicon carbide is higher, PN junction diode positive cut-in voltage with higher
(VF > 2.7V), so that device is high using conduction loss in the process.Meanwhile the because higher basal plane defects of silicon carbide
(Basal Plane Defects), silicon carbide device are easy to produce when Bipolar current is connected and stack dislocation (Stacking
Faults), and then increase the conducting resistance of silicon carbide, leakage current and influence device reliability.
Summary of the invention
In view of the drawbacks of the prior art, the utility model provides a kind of carbide MOS devices with heterojunction diode.
The utility model is being reduced by introducing heterojunction diode, the feature low using its cut-in voltage, single polarity current is conductive
While conduction loss of the device in backward dioded conduction, reduces reverse recovery charge and improve the reliable of silicon carbide
Property.
The utility model provides a kind of carbide MOS devices with heterojunction diode, comprising:
Base semiconductor area [001], front and back be successively arranged the first conductive type semiconductor drift region [002] and
First electrode [013]；
The top central of first conductive type semiconductor drift region [002] be equipped with gate electrode [007], gate electrode [007] with
Gate dielectric layer [006] is equipped between drift region [002]；
It is equipped with and gate dielectric layer [006] inside the first conductive type semiconductor drift region [002] of gate electrode [007] two sides
The second conductive type semiconductor channel body region [003] being in contact；
Second conductive type semiconductor channel body region [003] inner top layer be equipped with simultaneously with gate dielectric layer [006] and ohm
The first conductive type semiconductor heavily doped region [004] that contact layer [010] is in contact；
Second conductive type semiconductor channel body region [003] inner top layer is equipped with and is in contact with ohmic contact layer [010]
The second conductive type semiconductor heavily doped region [005]；
The first conductive type semiconductor drift region [002] top on the outside of second conductive type semiconductor channel body region [003]
Portion is equipped with the hetero semiconductor region [008] being in contact with the first conductive type semiconductor drift region [002]；
First conductive type semiconductor heavily doped region [004] and the second conductive type semiconductor heavily doped region [005] pass through
Ohmic contact layer [010] and second electrode [012] equipotential；
Hetero semiconductor region [008] and second electrode [012] equipotential；
Dielectric layer [009] is equipped between second electrode [012] and gate electrode [007] to be isolated.
Wherein, the base semiconductor area [001], the first conductive type semiconductor drift region [002], the second conductive-type
Type semiconductor channel body area [003], the first conductive type semiconductor heavily doped region [004], the second conductive type semiconductor are heavily doped
The material of miscellaneous area [005] is silicon carbide.
Wherein, it is contacted at the top of the first conductive type semiconductor drift region [002] with hetero semiconductor region [008]
Place is equipped with the second conductive type semiconductor Resistance with the second conductive type semiconductor channel body region [003] separately
[103]。
Further, a kind of carbide MOS devices with heterojunction diode include single or multiple second
Conductive type semiconductor Resistance [103].
Wherein, the second conductive type semiconductor Resistance [103] and the second conductive type semiconductor channel body region
[003] material having the same and dopant profiles.
Wherein, first conductive type semiconductor is N-type semiconductor, and the second conductive type semiconductor is that p-type is partly led
Body.
Wherein, first conductive type semiconductor is P-type semiconductor, and the second conductive type semiconductor is that N-type is partly led
Body.
Wherein, the conduction type in the base semiconductor area [001] can be the first conduction type and the second conductive-type
One of type.
Wherein, the material of the hetero semiconductor region [008] be carbon, silicon, germanium at least one of element composition
Semiconductor material, forbidden bandwidth are different from silicon carbide.
Detailed description of the invention
Fig. 1 is a kind of one embodiment of carbide MOS devices with heterojunction diode.The MOS device is anti-
When to diode current flow, hetero semiconductor region [008] and drift region [002] forms heterojunction diode, makes the first conduction
The carrier of type can flow to second electrode [012] from first electrode [013], so that monopolar current conduction is realized, to reduce
The conduction loss and switching loss of device, while the stacking dislocation of silicon carbide being inhibited to grow (Stacking Faults), it improves
Reliability.
Fig. 2 is a kind of one embodiment of carbide MOS devices with heterojunction diode.The MOS device is into one
Step includes one or more the second conductive type semiconductor Resistance [103].Second conductive type semiconductor Resistance
[103] leakage current of the heterojunction diode of the MOS device when high pressure is reverse-biased can be made to be inhibited.
Specific embodiment
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, with reference to embodiments and join
Attached drawing is examined, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only to solve
The utility model is released, is not used to limit the utility model.
In one embodiment of the utility model, the base semiconductor area [001] be N-type silicon carbide, front and
The back side is successively arranged N-type silicon carbide drift region [002] and drain electrode [013].
In one embodiment of the utility model, the top central of the N-type silicon carbide drift region [002] is equipped with grid electricity
Pole [007] is equipped with gate dielectric layer [006] between gate electrode [007] and drift region [002].
In one embodiment of the utility model, the N-type silicon carbide drift region [002] of the gate electrode [007] two sides
Inside is equipped with the p-type silicon carbide channel body region [003] being in contact with gate dielectric layer [006].
In one embodiment of the utility model, described p-type silicon carbide channel body region [003] inner top layer is equipped with and grid
The N-type silicon carbide heavily doped region [004] that dielectric layer [006] is in contact.
In one embodiment of the utility model, p-type silicon carbide channel body region [003] inner top layer is equipped with p-type
Silicon carbide heavily doped region [005].
N-type silicon carbide in one embodiment of the utility model, on the outside of the p-type silicon carbide channel body region [003]
The hetero semiconductor region [008] being in contact with N-type silicon carbide drift region [002] is equipped at the top of drift region [002].
In one embodiment of the utility model, the N-type silicon carbide heavily doped region [004] and p-type silicon carbide are heavily doped
Miscellaneous area [005] passes through ohmic contact layer [010] and source electrode [012] equipotential.
In one embodiment of the utility model, the hetero semiconductor region [008] passes through opening [011] and source electrode
[012] it is in contact, and equipotential therewith.
In one embodiment of the utility model, dielectric layer is equipped between the source electrode [012] and gate electrode [007]
[009] it is isolated.
In one embodiment of the utility model, at the top of the N-type silicon carbide drift region [002] and hetero semiconductor region
[008] contact position is equipped with the p-type silicon carbide Resistance [103] with p-type silicon carbide channel body region [003] separately.
In one embodiment of the utility model, a kind of carbide MOS devices packet with heterojunction diode
The Resistance containing single p-type silicon carbide [103].
In one embodiment of the utility model, the p-type silicon carbide Resistance [103] and p-type silicon carbide channel body
Area [003] has dopant profiles.
In one embodiment of the utility model, the material of the hetero semiconductor region [008] is silicon materials, forbidden band
Width is about 1.05eV, less than the forbidden bandwidth of silicon carbide.
Claims (9)
1. a kind of carbide MOS devices with heterojunction diode characterized by comprising
Base semiconductor area [001], front and back are successively arranged the first conductive type semiconductor drift region [002] and first
Electrode [013]；
The top central of first conductive type semiconductor drift region [002] is equipped with gate electrode [007], gate electrode [007] and drift
Gate dielectric layer [006] is equipped between area [002]；
It is equipped with inside the first conductive type semiconductor drift region [002] of gate electrode [007] two sides and connects with gate dielectric layer [006]
Second conductive type semiconductor channel body region [003] of touching；
Second conductive type semiconductor channel body region [003] inner top layer be equipped with simultaneously with gate dielectric layer [006] and Ohmic contact
The first conductive type semiconductor heavily doped region [004] that layer [010] is in contact；
Second conductive type semiconductor channel body region [003] inner top layer is equipped with the to be in contact with ohmic contact layer [010]
Two conductive type semiconductor heavily doped regions [005]；
It is set at the top of the first conductive type semiconductor drift region [002] on the outside of second conductive type semiconductor channel body region [003]
There is the hetero semiconductor region [008] being in contact with the first conductive type semiconductor drift region [002]；
First conductive type semiconductor heavily doped region [004] and the second conductive type semiconductor heavily doped region [005] pass through ohm
Contact layer [010] and second electrode [012] equipotential；
Hetero semiconductor region [008] and second electrode [012] equipotential；
Interlayer dielectric layer [009] is equipped between second electrode [012] and gate electrode [007] to be isolated.
2. a kind of carbide MOS devices with heterojunction diode according to claim 1, it is characterised in that: described
Base semiconductor area [001], the first conductive type semiconductor drift region [002], the second conductive type semiconductor channel body region
[003], the first conductive type semiconductor heavily doped region [004], the second conductive type semiconductor heavily doped region [005] material be
Silicon carbide.
3. a kind of carbide MOS devices with heterojunction diode according to claim 1, it is characterised in that: described
The first conductive type semiconductor drift region [002] at the top of with hetero semiconductor region [008] contact position, be equipped with and the second conductive-type
The the second conductive type semiconductor Resistance [103] of type semiconductor channel body area [003] separately.
4. a kind of carbide MOS devices with heterojunction diode according to claim 3, it is characterised in that: described
A kind of carbide MOS devices with heterojunction diode include single or multiple second conductive type semiconductors Resistance
[103]。
5. a kind of carbide MOS devices with heterojunction diode according to claim 3, it is characterised in that: described
The second conductive type semiconductor Resistance [103] and second conductive type semiconductor channel body region [003] material having the same
Material and dopant profiles.
6. the carbide MOS devices according to any one of claims 1 to 3 with heterojunction diode, it is characterised in that:
First conductive type semiconductor is N-type semiconductor, and the second conductive type semiconductor is P-type semiconductor.
7. the carbide MOS devices according to any one of claims 1 to 3 with heterojunction diode, it is characterised in that:
First conductive type semiconductor is P-type semiconductor, and the second conductive type semiconductor is N-type semiconductor.
8. a kind of carbide MOS devices with heterojunction diode according to claim 1, it is characterised in that: described
Base semiconductor area [001] conduction type can be the first conduction type and the second conduction type one of.
9. a kind of carbide MOS devices with heterojunction diode according to claim 1, it is characterised in that: described
Hetero semiconductor region [008] material be graphite, diamond, silicon, germanium, SiGe and gallium nitride one of, forbidden band is wide
It spends different from silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821773206.8U CN208985989U (en) | 2018-10-30 | 2018-10-30 | A kind of carbide MOS devices with heterojunction diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821773206.8U CN208985989U (en) | 2018-10-30 | 2018-10-30 | A kind of carbide MOS devices with heterojunction diode |
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| Publication Number | Publication Date |
|---|---|
| CN208985989U true CN208985989U (en) | 2019-06-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216464A (en) * | 2018-10-30 | 2019-01-15 | 派恩杰半导体（杭州）有限公司 | A kind of carbide MOS devices with heterojunction diode |
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2018
- 2018-10-30 CN CN201821773206.8U patent/CN208985989U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216464A (en) * | 2018-10-30 | 2019-01-15 | 派恩杰半导体（杭州）有限公司 | A kind of carbide MOS devices with heterojunction diode |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: A160, Building 1, No. 316 Binhai Fourth Road, Qianwan New District, Ningbo City, Zhejiang Province Patentee after: Painjie Semiconductor (Zhejiang) Co.,Ltd. Country or region after: China Address before: Room D3204, 3rd Floor, Building 1 (North), No. 368 Liuhe Road, Puyan Street, Binjiang District, Hangzhou City, Zhejiang Province Patentee before: PN JUNCTION SEMICONDUCTOR (HANGZHOU) Co.,Ltd. Country or region before: China |
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