CN109212326A - Micro field sensor part based on piezoelectric effect and piezoresistive effect multi-mode coupling - Google Patents
Micro field sensor part based on piezoelectric effect and piezoresistive effect multi-mode coupling Download PDFInfo
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Abstract
A kind of micro field sensor part based on piezoelectric effect and piezoresistive effect multi-mode coupling, including the semiconductive thin film placed in the horizontal direction, the lower section of the semiconductive thin film is equipped with the substrate that horizontal direction is placed, it supports to form cavity body structure by intermediate course between the semiconductive thin film and substrate, the upper surface of the semiconductive thin film is equipped with pressure drag material, the pressure drag material includes the piezoelectric blocks of the piezoelectric film of lateral-lateral mode, transverse direction-longitudinal mode, in laterally-transverse direction mode, the top surface of the semiconductive thin film is equipped with piezoelectric film；In transverse direction-longitudinal mode, the bottom surface of the semiconductive thin film is equipped with piezoelectric blocks.The beneficial effect is that: it is small in size, degree of integration is high, circuit temperature drift is effectively reduced, reduces null offset, improving measurement accuracy, it can be achieved that the electric field under broadband, high field intensity and complex environment accurately measures, can also be carried out in electrification.
Description
Technical field
The characteristics of taking into account wide electric field measurement frequency domain, wide dynamic range the present invention relates to electric field sensing field, especially one kind
The micro field sensor part based on piezoelectric effect and piezoresistive effect multi-mode coupling.
Background technique
Smart grid has become the great direction that energy industry within the scope of Present Global is changed with developed.The base of smart grid
Plinth core is one information network to match therewith of building, realizes the transparence and reality of key node information in electric power networks
Shi Hua.Deep learning and big data analysis are carried out to mass data, can effectively improve the self diagnosis and self- recoverage of electric power networks,
Realize the flexible operation of efficient, safe and stable, high value and low cost.
Basic electrical quantity of the voltage as electric system plays a key role the operation assessment of whole system.Tradition
Voltage sensor volume is big, at high cost, measurement has a single function, measurement accuracy is low, is unable to satisfy the survey of network information wide-area distribution type
The demand of amount.The integrated micro electric-field sensor being currently widely studied has small in size and non-contacting advantage, to measurement
The electric field distortion of environment influences that small, measurement accuracy is high, and be easy to produce in batches it is at low cost, therefore will be in the voltage of electric system
It plays a significant role in information monitoring.
Currently, the micro field sensor of practicability mainly applies photoelectric effect or MEMS (MEMS) to sense skill
Art.It has been come into operation based on photoelectric electric-field sensor part, has carried out the electric field real-time monitoring of substation's high voltage bus side.
But optical principle and device are high to temperature stability requirement, harsh to laser source quality requirement, this is currently based on optics
The all the sensors of effect need the problem solved, in addition big from laser transmitting system to detection system entirety occupied space, if
Standby cost is high, and installation maintenance technical requirements are high, therefore cannot achieve the distributed monitoring of smart grid.Electricity based on MEMS technology
Field sensor belongs to reference to ground meter, and when use needs to be grounded, thus is suitably applied in the air electric field of ground or shaft tower attachment
In monitoring.The advantages of MEMS electric-field sensor is high resolution, easily micromation, and the limitation of principle causes it to measure electric field
It is low, Measurement bandwidth is narrow, energy consumption is higher etc..
Summary of the invention
Mesh of the invention are as follows:
It is proposed multi-operation mode, broadband, the high-amplitude of a kind of Strain-coupled structure based on piezoelectric effect and piezoresistive effect
The electric field sensing device of value, including laterally-lateral (T-T) mode and lateral-longitudinal (T-L) mode.
Based on above-mentioned purpose, devise a kind of based on the miniature electric field of piezoelectric effect and piezoresistive effect multi-mode coupling sensing
Device.
Mentality of designing are as follows:
The effect of Strain-coupled structure is that the deforming mechanical that electric field is pushed electric material is transmitted on pressure drag material and passes through
Piezoresistive effect causes the variation of resistance.The resistance of Wheatstone bridge is by the semiconductive thin film ion implantation region structure with piezoresistive effect
At resistance region selection is straining symmetrical region, therefore resistance symmetrically changes, by the electricity for measuring Wheatstone bridge
Potential difference can realize the measurement to electric field.
Specific design scheme are as follows:
A kind of micro field sensor part based on piezoelectric effect and piezoresistive effect multi-mode coupling, including in the horizontal direction
The semiconductive thin film of placement, the lower section of the semiconductive thin film are equipped with the substrate that horizontal direction is placed, the semiconductive thin film with
It supports to form cavity body structure by intermediate course between substrate, the upper surface of the semiconductive thin film is equipped with pressure drag material, described
Pressure drag material includes the piezoelectric film under lateral-lateral (T-T) Modality work, positioned at the top surface of the semiconductive thin film；And laterally-
Piezoelectric blocks under longitudinal (T-L) Modality work, positioned at the bottom surface of the semiconductive thin film.
The quantity of pressure drag material is four, and the horizontal cross-section of the pressure drag material is in rectangular list structure, the pressure drag material
Material is the ion implantation region in the semiconductive thin film, and section depth is less than the thickness of the semiconductive thin film, and upper surface is
Same surface,
For laterally-transverse direction operation mode structure, the piezoelectric material is film-form, is deposited on the semiconductor film
Any material is not placed in the cavity of the intermediate course in the upper surface of film.In the electric field of vertical direction, piezoelectric membrane is generated
Significant telescopic deformation in horizontal plane, since piezoelectric membrane is laminated with semiconductive thin film, deformation can be coupled in the face of piezoelectric membrane
On to semiconductive thin film and drives in semiconductor film film surface and stretch.
For laterally-longitudinal direction operation mode structure, the piezoelectric material is block structure, is placed in the intermediate course
In cavity, upper surface is Nian Jie with semiconductive thin film.In the electric field of vertical direction, it is significant that piezoelectric material generates vertical direction
Telescopic deformation, since piezoelectric material is Nian Jie with semiconductive thin film, the VERTICAL DEFORMATION of piezoelectric material can be coupled on semiconductive thin film
And drive the up-down vibration of semiconductive thin film.Comprehensive both modalities which, no matter shape becomes vertical direction or water on semiconductive thin film
Square to can all make film generate up-down vibration, therefore piezoelectric material can all be efficiently couple to half to the response of external electrical field
On conductor thin film and the resistance of the pressure drag material of the ion doped region is made to change.
The quantity of the pressure drag material of the ion doped region is four, and the horizontal cross-section of the pressure drag material is in rectangular strip
Shape structure constitutes four resistance.Resistance connects to form Wheatstone bridge by the metal electrode, is filled by power supply and voltage measurement
It sets etc. and to constitute the measuring circuit part together.
Membrane structure, the piezoelectric film deposit and cover the upper surface with the semiconductive thin film piezoelectric film in the form of sheets.
The horizontal cross-section of the piezoelectric blocks is in rectangular list structure, and the top surface of the piezoelectric blocks and the semiconductive thin film are viscous
It connects in succession, the piezoelectric blocks are located in the cavity body structure of intermediate course formation.
In view of the particular/special requirement of ion doped region, semiconductive thin film should choose suitable crystal orientation and body dopant class
Type.Doped region ionic type and concentration further determine piezoresistive effect, it should be made to have in face laterally and longitudinally piezoelectricity system
Close, the contrary feature of number size such as selects the N doped silicon wafer of crystal orientation, and carries out p-type doping to ion implantation region,
Piezoresistance coefficient π longitudinal in face at this timel=+71.8 × 10-11m2/ N, lateral piezoresistance coefficient π in facet=-66.3 × 10-
11m2/N.In order to guarantee the sensitivity and micromation of device, the thickness of semiconductive thin film is as far as possible in several microns to tens microns models
In enclosing, but since the film of the thickness can not individualism, it is therefore desirable to by the way that silicon wafer is thinned or using having appropriate device
Silicon (SOI) in the insulating substrate of thickness degree.
The chamber portion free vibration of semiconductive thin film lower surface, surrounding are fixedly connected with intermediate course.For T-T mode,
Piezoelectric membrane fixation is fitted on semiconductive thin film, and material should choose the material with piezoelectric effect in significant face, such as by molten
The pzt thin film or piezoelectric membrane PVDF or its multi-element doping or copolymer, etc. of sol-gel growth.Due to piezoelectric membrane
It is laminated with semiconductive thin film, it is contemplated that the thickness of the sensitivity of T-T mode, piezoelectric membrane should substantially exist with thickness of semiconductor film
One magnitude, generally tens microns more appropriate.At this point, the size of entire device is hundred microns minimum, maximum can millimeter amount
Grade.For T-L mode, the upper surface and semiconductive thin film lower surface of blocky piezoelectric material are connected, and lower surface is fixed on lining
On bottom.Blocky piezoelectric material should choose the material with significant thickness direction piezoelectric effect, such as ferroelectricity relaxation body direction polarization
Lead magnesio-niobate metatitanic acid leading crystal PMN-PT, lead lead-titanate niobium-zincate crystal PZN-PT, or the zirconium titanium with suitable component proportion
Lead plumbate crystal PZT.The thickness and intermediate course thickness matching of blocky piezoelectric material.
The intermediate course is insulating materials interlayer, and material includes one of glass, non-impurity-doped silicon.The centre
Layer is clipped between semiconductive thin film and substrate, and bottom and substrate bond, according to the different selection glue bonds or anode key of material
It closes, top and semiconductive thin film anode linkage guarantee maximum stiffness of coupling.There are cavitys at intermediate course center, facilitate thin
Film vibration.The semiconductive thin film is fixed on above intermediate course, only the free vibration of cavity area film.
The material of the substrate can be one of glass, silicon, plated circuit, arrive millimeter amount with a thickness of hundred microns
Grade.The substrate effect is that support, protection and electrode are drawn.
Using above-mentioned material, on the one hand reduce distortion of the device to electric field, on the other hand reduces under T-L mode to parallel connection
The influence of the distribution of the size and induction field of piezoelectric material induction field intensity.Simulation result shows when using general doping
Silicon wafer as intermediate course when, device can only carry out the measurement of high frequency section, and the electric field response and frequency of centering low-frequency range are flat
Side is directly proportional, cannot achieve wide band sensing measurement.In contrast, T-T mode to the material of intermediate course without particular/special requirement,
Silicon wafer, glass for generally adulterating etc. can use.The thickness of intermediate course is generally hundred micron dimensions to millimeter magnitude.It is intermediate
The cavity shape of interlayer can play the role of fixed blocky piezoelectric material using truncated rectangular pyramids, cylindrical body, beak type etc., and
It is matched with the position of the ion doping resistance area of semiconductive thin film.By voltage module can occur for measuring circuit part, signal is put
The modules composition such as big module, voltage measurement module.
Above-mentioned technical proposal through the invention is obtained miniature based on piezoelectric effect and piezoresistive effect multi-mode coupling
Electric field sensing device, the beneficial effect is that:
Structure design and the design of material of device prevent the generation punctured under high field intensity, and the principle and material of device guarantee
The temperature stability of device.Therefore, which can realize that the electric field under broadband, high field intensity and complex environment accurately measures.
Wheatstone bridge is constituted using the ion doped region of semiconductive thin film, keeps resistance measurement more convenient accurate.By right
The reasonable Arrangement of Wheatstone bridge, the selection for increasing balance resistance and power-supplying forms can be effectively reduced circuit temperature drift, reduce zero point
Drift, improving measurement accuracy.
Using micro fabrication, apparatus of the present invention can accomplish that small in size, degree of integration is high, compare existing electric field sensing
Device, it can substantially eliminate influence of the sensing device to electric field environment itself, while cost can be greatly reduced, and be more applicable for
The monitoring of wide scope nodal information.
Apparatus of the present invention are non-contact measurement apparatus, on electrical quantity such as primary side voltage, electric currents without influence, and to device
The requirement of exterior insulation is low, can be used for the equipment of high voltage.In addition, the installation and maintenance process of device is simple, in electrification feelings
It can also be carried out under condition.
Detailed description of the invention
Fig. 1 is cuing open for the micro field sensor part of the present invention based on piezoelectric effect and piezoresistive effect multi-mode coupling
Face structural schematic diagram；
Fig. 2 is bowing for the micro field sensor part of the present invention based on piezoelectric effect and piezoresistive effect multi-mode coupling
Depending on structural schematic diagram；
Fig. 3 is the favour of the micro field sensor part of the present invention based on piezoelectric effect and piezoresistive effect multi-mode coupling
Stone bridge measuring circuit schematic diagram；
Fig. 4 (a) is the micro field sensor part of the present invention based on piezoelectric effect and piezoresistive effect multi-mode coupling
T-L mode piezoelectric piezoresistive transducer diagram of strains；
Fig. 4 (b) is the micro field sensor part of the present invention based on piezoelectric effect and piezoresistive effect multi-mode coupling
T-T mode piezoelectric piezoresistive transducer diagram of strains；
In figure, 1, piezoelectric film；2, pressure drag material；3, semiconductive thin film；4, intermediate course；5, piezoelectric blocks；6, substrate；7, it surveys
Measure circuit.
Specific embodiment
The present invention is specifically described with reference to the accompanying drawing.
A kind of micro field sensor part based on piezoelectric effect and piezoresistive effect multi-mode coupling, including in the horizontal direction
The semiconductive thin film 3 of placement, the lower section of the semiconductive thin film 3 are equipped with the substrate 6 that horizontal direction is placed, the semiconductive thin film
Cavity body structure is formed by the support of intermediate course 4 between 3 and substrate 6, the upper surface of the semiconductive thin film 3 is equipped with pressure drag material
Material, the pressure drag material include the piezoelectric blocks 5 under piezoelectric film 1, the transverse direction-longitudinal mode under lateral-lateral Modality work work,
The top surface of the semiconductive thin film 3 is equipped with piezoelectric film 1, is equipped with piezoelectric blocks 5 in the cavity of the interlayer 4.
Membrane structure, the piezoelectric film 1 deposit and cover the upper table with the semiconductive thin film 3 piezoelectric film 1 in the form of sheets
Face, 3 top surface of semiconductive thin film are equipped with ion doped region 2.
The top surface of the piezoelectric film 5 and 3 bonding connection of semiconductive thin film, the piezoelectric film 5 are located at the intermediate folder
In the cavity body structure that layer 4 is formed.
The intermediate course 4 is insulating materials interlayer, and material includes one of glass, non-impurity-doped silicon.
The material of the substrate 6 can be one of glass, silicon, plated circuit, arrive millimeter amount with a thickness of hundred microns
Grade.
Embodiment 1
Under electric field environment, piezoelectric material is since deformation occurs for piezoelectric effect.Assuming that direction of an electric field direction z along Fig. 1, right
In the electric-field sensor of T-L mode, piezoelectric material has significant thickness direction piezoelectric effect, i.e. piezoelectric coefficient d33It is larger, then
Telescopic deformation occurs for piezoelectric material through-thickness under vertical electric field effect, and deformation at this time, which will drive, to be connected with piezoelectric material
Semiconductive thin film occurs to vibrate up and down deformation.Since distribution broad in the middle and that surrounding is small, the strain of film is presented in film deformation
Journey can be used the pressure model of four-point supporting on film and be analyzed, 4 points of four vertex for piezoelectric material.Division is led
Lineation opinion antithesis can see into the situation of thin film strain, be in radiusCircle range in, which can be with
It is equivalent to single-point pressure model.Simultaneously because comparing the strained situation on (rectangular four boundaries that side length is 2a) near four sides
Concern, thus can theoretically be carried out with single-point pressure model it is equivalent (wherein 2b for piezo-electric crystal side length, 2a for cavity side
It is long).Using thin film center as x-y coordinate system origin, in x2+y2≥2b2Region in, the deformation u at point (x, y) are as follows:
Wherein, w0For the deformation of thin film center.According to the elastic deformation theory of film it is found that single-point pressure P are as follows:
Wherein, Y is the Young's modulus of semiconductive thin film, g1、g2It is only related with Poisson's ratio for constant.Known piezoelectric material again
With the pressure P of the contact position of semiconductive thin film in the z-direction are as follows:
Wherein c33 EFor the elastic stiffnesses of piezoelectric material, e33For the piezoelectric modulus of piezoelectric material, σ is that electric field is individually made
Size is strained with lower piezoelectric thickness direction, E is electric field.The expression of σ and P can be obtained using above-mentioned three formulas solving equations
Formula.
It is analyzed in finite element data platform emulation, obtains the distribution strained on the semiconductive thin film of T-L mode substantially such as Fig. 4
(a) shown in.It can be seen that maximum strain is located at cavity side length center on film.
For the electric-field sensor of T-T mode, piezoelectric membrane has piezoelectric effect, i.e. piezoelectric coefficient d in significant face31Or
d32Larger, then under vertical electric field effect telescopic deformation occurs in the horizontal direction for piezoelectric membrane.When piezoelectric membrane stretches, with it
The semiconductive thin film one side of contact will be driven stretching, and deformation protruding upward occurs for semiconductive thin film at this time；Work as piezoelectric membrane
When compression, the semiconductive thin film one side being in contact with it will be driven compression, and the deformation to lower recess occurs for semiconductive thin film at this time,
Therefore semiconductive thin film, which is formed, vibrates up and down deformation.The deformation process is equal to the deformation of homogeneous pressure lower semiconductor film
Journey, therefore also can use above-mentioned single-point pressure model, theory analysis is carried out with strain path of the identical thinking to film.
It is analyzed in finite element data platform emulation, obtains the distribution strained on the semiconductive thin film of T-L mode substantially such as Fig. 4
(b) shown in.It can be seen that maximum strain is similarly positioned at cavity side length center on film.
It is worth noting that no matter in T-L mode T-T mode, although having the piezoelectricity effect in some significant direction
Should and coefficient, the piezoelectric modulus in not equivalent to remaining direction be not present or can be ignored.In fact, not considering other directions
Coefficient has an impact to the result accuracy of formula, but the not sound qualitative judgement and the judgement of number of results magnitude of shadow performance.
After deformation occurs for semiconductive thin film, response variation can occur for the resistance of ion doped region.By the way that doped region is arranged
The location and shape in domain, resistance equality circuit balances when static, and opposite doped region resistance is in the same direction and the same as big under electric field action
Small variation, adjacent doped region resistance is reversed and same size variation.Doped region is connected into Wheatstone bridge, such as Fig. 3, with survey
The power supply and output voltage for measuring circuit part progress Wheatstone bridge measure, and the relationship of output voltage and doped region stress is public
Formula:
Wherein, k is the proportionality coefficient of doped resistor effective coverage, πlWith πtFor axial and lateral piezoresistance coefficient, a is film
The half of side length, h are film thickness, and v is film Poisson's ratio, USFor the power supply applied in Wheatstone bridge.Therefore, output voltage with
Membrane stress and electric field strength establish one-to-one parsing relationship.
Above-mentioned technical proposal only embodies the optimal technical scheme of technical solution of the present invention, those skilled in the art
The principle of the present invention is embodied to some variations that some of them part may be made, belongs to the scope of protection of the present invention it
It is interior.
Claims (6)
1. a kind of micro field sensor part based on piezoelectric effect and piezoresistive effect multi-mode coupling, including put in the horizontal direction
The semiconductive thin film (3) set, the lower section of the semiconductive thin film (3) are equipped with the substrate (6) that horizontal direction is placed, the semiconductor
Cavity body structure is formed by intermediate course (4) support between film (3) and substrate (6), which is characterized in that the semiconductive thin film
(3) upper surface is equipped with ion doped region and constitutes pressure drag material (2), under laterally-transverse direction mode, the semiconductive thin film (3)
Top surface is equipped with piezoelectric film (1), and under transverse direction-longitudinal mode, the bottom surface of the semiconductive thin film (3) is equipped with piezoelectric blocks (5).
2. the micro field sensor according to claim 1 based on piezoelectric effect and piezoresistive effect multi-mode coupling
Part, which is characterized in that the quantity of pressure drag material (2) is four, and the horizontal cross-section of the pressure drag material (2) is in rectangular strip knot
Structure, the pressure drag material (2) are the ion implantation region in the semiconductive thin film (3), and section depth is less than the semiconductor
The thickness of film (3), upper surface are same surface.
3. the micro field sensor according to claim 1 based on piezoelectric effect and piezoresistive effect multi-mode coupling
Part, which is characterized in that for laterally-lateral operation mode structure, the piezoelectric film (1) membrane structure in the form of sheets, the piezoelectricity
Film (1) deposits and covers the upper surface with the semiconductive thin film (3).
4. the micro field sensor according to claim 1 based on piezoelectric effect and piezoresistive effect multi-mode coupling
Part, which is characterized in that for laterally-longitudinal direction operation mode structure, the top surface of the piezoelectric blocks (5) and the semiconductive thin film
(3) bonding connection, the piezoelectric blocks (5) are located in the cavity body structure of the intermediate course (4) formation.
5. the micro field sensor according to claim 1 based on piezoelectric effect and piezoresistive effect multi-mode coupling
Part, which is characterized in that the intermediate course (4) is insulating materials interlayer, and material includes one of glass, non-impurity-doped silicon.
6. the micro field sensor according to claim 1 based on piezoelectric effect and piezoresistive effect multi-mode coupling
Part, which is characterized in that the material of the substrate (6) can be one of glass, silicon, plated circuit, with a thickness of hundred microns
To millimeter magnitude.
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Cited By (2)
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| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
| CN114487547A (en) * | 2022-01-14 | 2022-05-13 | 南方电网数字电网研究院有限公司 | Piezoelectric piezoresistive electric field sensor with silicon substrate reversely-arranged bonded glass structure |
| CN114487547B (en) * | 2022-01-14 | 2023-08-04 | 南方电网数字电网研究院有限公司 | Piezoelectric piezoresistance type electric field sensor with silicon substrate reversely-bonded glass structure |
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