CN109192795A - A kind of solar battery sheet - Google Patents
A kind of solar battery sheet Download PDFInfo
- Publication number
- CN109192795A CN109192795A CN201811071470.1A CN201811071470A CN109192795A CN 109192795 A CN109192795 A CN 109192795A CN 201811071470 A CN201811071470 A CN 201811071470A CN 109192795 A CN109192795 A CN 109192795A
- Authority
- CN
- China
- Prior art keywords
- main gate
- gate line
- solar battery
- battery sheet
- cropped area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000003466 anti-cipated effect Effects 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 4
- 239000012634 fragment Substances 0.000 abstract description 4
- 238000003466 welding Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a kind of solar battery sheet, can equal part slice be multiple battery blade units, and reduce fragment rate.A kind of solar battery sheet, including silicon wafer, front electrode and rear electrode, front electrode includes the multiple positive electrode main gate lines being parallel to each other for being set to front side of silicon wafer, each positive electrode main gate line is made of the multiple main grid line segments mutually disconnected, the quantity of the main grid line segment of multiple positive electrode main gate lines is identical and is aligned setting respectively, there is gap between two main grid line segments of arbitrary neighborhood of each positive electrode main gate line, solar battery sheet has for for cutting the cropped area solar battery sheet to be sliced, cropped area passes through the corresponding gap of each positive electrode main gate line, battery blade unit is respectively formed between two neighboring cropped area and/or between solar battery sheet outer rim and adjacent cropped area, main grid line segment on two battery blade units of arbitrary neighborhood is symmetrical arranged by symmetry axis of cropped area between the two.
Description
Technical field
The invention belongs to area of solar cell, and in particular to a kind of solar battery sheet.
Background technique
P-type double-side cell piece due to its preparation process is simple, characteristic low in cost and having generating electricity on two sides and it is extensive
Concern, and a point slice is carried out etc. to p-type double-sided solar battery, it is such as second-class to be divided into half cell piece, the combination of p-type double-side cell
Half design, can further promote properties of product on the basis of double-side cell, and the correspondence component power output after processing can be promoted
5W or so, it is even higher.Therefore designing and developing the two-sided half crystal-silicon solar cell of p-type will be future trend.
P-type double-side cell piece at present, after being cut into half according to half demand, the surface electrode main gate line of half battery is not
Symmetrical structure.Such as front electrode, after being cut to half, main gate line one end and the other end are different, and one end main grid does not rise at cut mark
Weldering distance design, when series welding, is easy to produce fragmentation, and appearance is not beautiful enough.
Summary of the invention
In view of the above technical problems, the present invention is intended to provide a kind of solar battery sheet, can equal part slice be multiple electricity
Pond blade unit, and reduce fragment rate.
In order to achieve the above objectives, The technical solution adopted by the invention is as follows:
A kind of solar battery sheet, including silicon wafer, front electrode and rear electrode, the silicon wafer have front and back, institute
Stating front electrode includes the multiple positive electrode main gate lines being parallel to each other for being set to the front side of silicon wafer, each positive electrode master
Grid line is made of the multiple main grid line segments mutually disconnected, and the quantity of the main grid line segment of multiple positive electrode main gate lines is identical and divides
It Dui Qi not be arranged, there is gap, the solar energy between two main grid line segments of arbitrary neighborhood of each positive electrode main gate line
Cell piece has for for cutting the cropped area the solar battery sheet to be sliced, the cropped area to pass through each described
The corresponding gap of positive electrode main gate line, between two neighboring cropped area and/or solar battery sheet outer rim with it is adjacent
Cropped area between be respectively formed with battery blade unit, the main grid line segment on two battery blade units of arbitrary neighborhood with the two it
Between cropped area for symmetry axis be symmetrical arranged.
In one embodiment, each battery blade unit has the central axis being parallel to each other with cropped area, described
Main grid line segment on battery blade unit is symmetrical arranged by symmetry axis of the central axis.
In one embodiment, each gap equal part that the cropped area is passed through it.
In one embodiment, the master is distributed in each battery blade unit in each main gate line respectively
Grid line section.
In one embodiment, the central axis of the main gate line is in the cropped area, each main gate line it is more
Center line arranged at equal intervals of a main grid line segment along the main gate line.
In one embodiment, the front electrode further includes the multiple positive electricity being parallel to each other for being set to the front side of silicon wafer
Superfine grid line, the positive-electrode fine grid line are parallel to the cropped area, and the cropped area is located at the two neighboring positive electricity
Between superfine grid line.
In one embodiment, the rear electrode includes the multiple back electrodes being parallel to each other for being set to the silicon chip back side
Main gate line, the cropped area sequentially pass through each back electrode main gate line, the back electricity on two battery blade units of arbitrary neighborhood
Pole main gate line is symmetrical arranged by symmetry axis of cropped area between the two.
Preferably, the central axis of the back electrode main gate line is in the cropped area, on each battery blade unit
Back electrode main gate line is arranged by symmetry axis mirror symmetry of the central axis of battery blade unit respectively.
The preferably described positive electrode main gate line is identical with the quantity of the back electrode main gate line and position corresponds.
In one embodiment, the quantity of the positive electrode main gate line is 5 ~ 20.
The present invention uses above scheme, has the advantages that compared with prior art
Main gate line is asymmetric after using symmetric design, solution cell piece to cut half by the front electrode to solar battery sheet asks
Topic, fragment rate is high when solving the problems, such as aesthetics and being used in the production of half component, and partly answers when the solar battery sheet is not cut
It is equally applicable when for common component production, do not influence properties of product and aesthetics.
Detailed description of the invention
It, below will be to attached drawing needed in embodiment description in order to illustrate more clearly of technical solution of the present invention
It is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of schematic diagram of the front electrode of solar battery sheet according to the present invention;
Fig. 2 is a kind of schematic diagram of the rear electrode of solar battery sheet according to the present invention.
Wherein, 1, front electrode;11, positive electrode main gate line;110, main grid line segment;111, gap;12, thin grid line;2, it carries on the back
Face electrode;21, back electrode main gate line;22, the thin grid line of back electrode;3, cropped area;4, battery blade unit;40, central axis.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be understood by the person skilled in the art.It should be noted that the explanation for these embodiments is used to help
Understand the present invention, but and does not constitute a limitation of the invention.In addition, involved in the various embodiments of the present invention described below
And to technical characteristic can be combined with each other as long as they do not conflict with each other.
Referring to Figures 1 and 2, the present embodiment provides a kind of p-type double-sided solar battery pieces according to the present invention, including silicon
Piece, front electrode 1 and rear electrode 2.Silicon wafer has positioned at the front of light side and the back side of backlight side, front electrode 1
It is formed on the front of silicon wafer, rear electrode 2 is formed on the back side of silicon wafer.
Referring to Fig.1, front electrode 1 includes the multiple positive electrode main gate lines 11 being parallel to each other for being set to front side of silicon wafer, just
11 sectional design of electrode main grid line, discontinuously.Each positive electrode main gate line 11 is by mutually disconnect 110 groups of multiple main grid line segments
At, each positive electrode main gate line 11 multiple main grid line segments 110 along positive electrode main gate line 11 center line arranged at equal intervals, it is multiple
The quantity of the main grid line segment 110 of positive electrode main gate line 11 it is identical and respectively alignment setting, each positive electrode main gate line 11 it is any
There is gap 111 between two neighboring main grid line segment 110.By taking front electrode 1 shown in FIG. 1 as an example, it is set side by side including 5
The positive electrode main gate line 11 vertically extended, each positive electrode main gate line 11 is by upper and lower spaced two main grid line segments
110 form, and have gap 111 between two main grid line segments 110, to two main grid line segments 110 are spaced apart, wherein being located at upper
Five main grid line segments 110 in portion align setting, and five main grid line segments 110 positioned at lower part align setting.
The solar battery sheet is divided into multiple battery blade units 4, after solar battery sheet is cut, each battery
Blade unit 4 is used as an independent slice cell piece.There is cropped area, the cropped area between adjacent cell blade unit 4
It, can will too after the cropped area is cut for being the linear region for extending to right end from solar cell piece left end for cutting
Multiple battery blade units 4 segmentation of positive energy cell piece, each battery blade unit 4 after segmentation respectively become an independent scribing
Cell piece.That is, battery blade unit 4 is formed between two neighboring cropped area 3, or it is formed in solar battery sheet side
Between edge and adjacent cropped area 3.A main grid is distributed in each positive electrode main gate line 11 respectively in each battery blade unit 4
Line segment 110.For as shown in Figure 1, solar battery sheet is divided into two battery blade units 4, deposits between two battery blade units 4
In a cropped area, which sequentially passes through the upside main grid line segment 110 and downside main grid of 5 positive electrode main gate lines 11
Gap 111 between line segment 110 simultaneously each gap 111 is halved.Each gap 111 be used for for main gate line section 110 reserve weld away from
From after solar battery sheet is cut, the main grid line segment 110 of battery blade unit 4 has a distance (as to rise apart from its outer rim
Weld distance), fragmentation can be effectively avoided in series welding, and appearance is more beautiful.
Cropped area 3 and the center line of positive electrode main gate line 11 are mutually perpendicular to, a left side for the former solar battery sheet along Fig. 1
Right direction extends, and the latter vertically extends.Cropped area 3 halves each gap 111 passed through described in it, so that two neighboring
Main grid line segment 110 on cell piece is with cropped area 3 between the two for the symmetrical setting of symmetry axis mirror.In addition, each battery
Blade unit 4 has the central axis 4 being parallel to each other with cropped area 3, and the main grid line segment 110 on each battery blade unit 4 is distinguished
It is the setting of symmetry axis mirror symmetry with center axis thereof 4.It should also be noted that, the central axis 4 of cropped area 3, cell piece
It is narration for convenience and defines, the not practical component part of front electrode 1.
Front electrode 1 further includes the multiple positive-electrode fine grid lines 12 being parallel to each other for being set to front side of silicon wafer, positive-electrode fine
Grid line 12 is parallel to cropped area 3, and cropped area is between two neighboring positive-electrode fine grid line 12.
Referring to Fig. 2, rear electrode 2 includes being set to multiple back electrode main gate lines 21 being parallel to each other of silicon chip back side, is cut out
It cuts region 3 and sequentially passes through each back electrode main gate line 21.The center line and cropped area 3 of back electrode main gate line 21 are mutually perpendicular to, preceding
Up and down direction of the person in Fig. 2 extends, and left and right directions of the latter in Fig. 2 extends.Rear electrode 2 further includes being set to silicon wafer back
Multiple thin grid lines 22 of back electrode being parallel to each other in face, left and right directions of the thin grid line 22 of back electrode in Fig. 2 extend and are parallel to
Cropped area 3.Back electrode main gate line 21 on two battery blade units 4 of arbitrary neighborhood is pair with cropped area 3 between the two
Claim axial symmetry setting, the back electrode main gate line 21 on each battery blade unit 4 is respectively with center axis thereof 4 for symmetry axis mirror image pair
Claim setting.It is further preferable that the front of two battery blade units 4 of arbitrary neighborhood, the back side are with cropped area 3 between the two
The setting of symmetry axis mirror symmetry.
In the solar battery sheet, positive electrode main gate line 11 is identical with the quantity of back electrode main gate line 21 and position one is a pair of
It answers.The quantity of positive electrode main gate line 11 is 5 ~ 20, and the quantity of back electrode main gate line 21 is 5 ~ 20.
The solar battery sheet that the invention of this reality provides can form multiple strokes by laser equipment after cropped area cutting
Piece cell piece (such as second-class to be divided into two half cell pieces).The present invention passes through the front electrode 1 to p-type double-sided solar battery piece
Special symmetric design is respectively adopted with rear electrode 2, solves the problems, such as that main gate line is asymmetric after cell piece cuts half;Can effectively it change
Kind solar battery sheet is applied to fragment rate high problem when half component, and improves the aesthetics aesthetics of product;The present invention
After 2 main gate line of rear electrode of design cuts half, still ensure that 2 main gate line both ends of the rear electrode solder joint of half battery is consistent,
Be conducive to matching component series welding processing procedure, can be welded from any one section;When the solar battery sheet is not sliced and directly apply to
It is equally applicable when common component produces, do not influence properties of product and aesthetics.
Main grid opposing cutout regions 3 are symmetrical when front electrode 1 of the present invention and rear electrode 2 are all made of full sheet, master when half
The central axis 4 of relatively each battery blade unit 4 of grid line is symmetrical.After half is cut along center line, front electrode 1 and rear electrode 2, in group
Part series welding process from any one end of main gate line in use, weld, welding effect is consistent, and welding effect will not be by main gate line both ends
Differentia influence.The solar battery is applicable to double-side assembly production, two-sided half component production is equally applicable to, without influencing
The properties of product, in conjunction with two-sided half component, power is more preferably.
The above embodiments merely illustrate the technical concept and features of the present invention, is a kind of preferred embodiment, and purpose exists
It cans understand the content of the present invention and implement it accordingly in person skilled in the art, protection of the invention can not be limited with this
Range.Equivalent transformation or modification made by all principles according to the present invention, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of solar battery sheet, including silicon wafer, front electrode and rear electrode, the silicon wafer has front and back,
The front electrode includes the multiple positive electrode main gate lines being parallel to each other for being set to the front side of silicon wafer, it is characterised in that: every
A positive electrode main gate line is made of the multiple main grid line segments mutually disconnected, the main grid line segment of multiple positive electrode main gate lines
Quantity is identical and alignment setting respectively, between having between two main grid line segments of arbitrary neighborhood of each positive electrode main gate line
Gap, the solar battery sheet has for supplying to cut the cropped area the solar battery sheet to be sliced, described to cut
Region passes through the corresponding gap of each positive electrode main gate line, between two neighboring cropped area and/or solar-electricity
Battery blade unit, the master on two battery blade units of arbitrary neighborhood are respectively formed between pond piece outer rim and adjacent cropped area
Grid line section is symmetrical arranged by symmetry axis of cropped area between the two.
2. solar battery sheet according to claim 1, it is characterised in that: each battery blade unit has and cuts
The central axis that region is parallel to each other, main grid line segment on the battery blade unit are that symmetrical axial symmetry is set with the central axis
It sets.
3. solar battery sheet according to claim 1, it is characterised in that: the cropped area passed through it each
Gap equal part.
4. solar battery sheet according to claim 1, it is characterised in that: each main gate line is in each battery
The main grid line segment is distributed in blade unit respectively.
5. solar battery sheet according to claim 1, it is characterised in that: the central axis of the main gate line is in described
Cropped area, the center line arranged at equal intervals of multiple main grid line segments of each main gate line along the main gate line.
6. solar battery sheet according to claim 1, it is characterised in that: the front electrode further include be set to it is described
Multiple positive-electrode fine grid lines being parallel to each other of front side of silicon wafer, the positive-electrode fine grid line is parallel to the cropped area, described
Cropped area is between the two neighboring positive-electrode fine grid line.
7. solar battery sheet according to claim 1, it is characterised in that: the rear electrode includes being set to the silicon
Multiple back electrode main gate lines being parallel to each other at the piece back side, the cropped area sequentially pass through each back electrode main gate line, appoint
The back electrode main gate line anticipated on two neighboring battery blade unit is symmetrical arranged by symmetry axis of cropped area between the two.
8. solar battery sheet according to claim 7, it is characterised in that: the central axis of the back electrode main gate line
In the back electrode main gate line on the cropped area, each battery blade unit be respectively symmetrical with the central axis of battery blade unit
The setting of axis mirror symmetry.
9. solar battery sheet according to claim 7, it is characterised in that: the positive electrode main gate line and the back electrode
The quantity of main gate line is identical and position corresponds.
10. solar battery sheet according to claim 1, it is characterised in that: the quantity of the positive electrode main gate line be 5 ~
20.
Priority Applications (1)
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CN201811071470.1A CN109192795A (en) | 2018-09-14 | 2018-09-14 | A kind of solar battery sheet |
Applications Claiming Priority (1)
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CN201811071470.1A CN109192795A (en) | 2018-09-14 | 2018-09-14 | A kind of solar battery sheet |
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CN109192795A true CN109192795A (en) | 2019-01-11 |
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CN201811071470.1A Pending CN109192795A (en) | 2018-09-14 | 2018-09-14 | A kind of solar battery sheet |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114497276A (en) * | 2021-12-31 | 2022-05-13 | 中国华能集团清洁能源技术研究院有限公司 | Photovoltaic module production line |
CN117276378A (en) * | 2023-09-19 | 2023-12-22 | 隆基绿能科技股份有限公司 | Solar cell array |
CN117276378B (en) * | 2023-09-19 | 2024-04-30 | 隆基绿能科技股份有限公司 | Solar cell array and splicing method thereof |
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CN117276378B (en) * | 2023-09-19 | 2024-04-30 | 隆基绿能科技股份有限公司 | Solar cell array and splicing method thereof |
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