CN202423321U - N-type solar battery with main grid with groove structure - Google Patents

N-type solar battery with main grid with groove structure Download PDF

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Publication number
CN202423321U
CN202423321U CN2012200274099U CN201220027409U CN202423321U CN 202423321 U CN202423321 U CN 202423321U CN 2012200274099 U CN2012200274099 U CN 2012200274099U CN 201220027409 U CN201220027409 U CN 201220027409U CN 202423321 U CN202423321 U CN 202423321U
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China
Prior art keywords
main grid
welding
grid
silicon wafer
type solar
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Expired - Lifetime
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CN2012200274099U
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Chinese (zh)
Inventor
王英超
熊景峰
胡志岩
李高非
王红芳
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Yingli Group Co Ltd
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Yingli Group Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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Abstract

The utility model discloses an N-type solar battery with a main grid with a groove structure. The N-type solar battery comprises a silicon wafer main body and a welding belt, a conductive coating is covered on the silicon wafer main body (silicon wafer for short) and comprises the main grid and a fine grid which are connected in stagger, and the welding belt is connected onto the main grid. The fine grid is used for collecting electric energy dispersed on the silicon wafer, the main grid is used for collecting electric energy on the fine grid, and the welding belt is connected with the main grid to be used for outputting the electric energy on the silicon wafer. The end portion of the main grid is provided with an opening structure. The N-type solar battery can increase a distance between a first soldering point of the main grid of the battery and the welding belt and the edge of the silicon wafer, thereby reducing welding stress at the edge of the silicon wafer during welding and effectively reducing silicon wafer damage caused by welding when the silicon wafer and the welding belt are welded. By means of structural improvement of the main grid on the silicon wafer, the N-type solar battery can achieve the purpose of solving the problem that the silicon wafer is easy to damage during welding.

Description

A kind of main grid has the N type solar cell of groove structure
Technical field
The utility model relates to photovoltaic industry technology field, and particularly a kind of main grid has the N type solar cell of groove structure.
Background technology
Solar cell is a kind of assembly that can luminous energy be converted into electric energy; The opto-electronic conversion of solar cell is to realize through photovoltaic effect through the silicon crystal in the assembly; Its transforming principle is: rayed is on material the time; Light partly can be by material absorbing, when electronics obtains energy from the external world (absorbing solar energy) will jump to higher can rank, the energy of acquisition is multi-hop can rank also high more more; Also unstable when electronics is in higher ability rank, will soon discharge the energy that obtains and get back to original ability rank.Become free electron if the enough higher positions of the energy that electronics obtains are broken away from nuclear constraint, the position that electronics is available then is called the hole.Free electron may be because of friction or factor off-energy such as collision, receives the attraction in hole at last and compound.In the recombination process of above-mentioned hole formation and hole and electronics, flowing of free electron can be thought flow of current, thereby realizes the conversion of luminous energy and electric energy.
Please refer to Fig. 1, Fig. 1 is the structural representation of solar cell in the prior art.
Generally speaking, it is the silicon chip of rectangular structure that main grid has the silicon crystal that is used to produce electric energy in the N type solar cell of groove structure, when silicon chip is accepted the irradiation of light beam, can produce electric energy through above-mentioned principle on the silicon chip.Silicon chip is provided with conductive coating, and conductive coating is divided into thin grid and main grid, and thin grid distribute on the surface of silicon chip comparatively diffusely, are used to collect electric energy on the silicon chip.Main grid is connected with each thin grid, and the electric energy that main grid is collected thin grid gathers.The electric energy that single silicon chip produces a little less than; In order to strengthen the electric energy that N type solar cell that main grid has groove structure is exported; In a main grid has the N type solar cell of groove structure, be provided with the polylith silicon chip usually through the welding series connection, thereby the electric energy on the multi-disc silicon chip is gathered output.Welding with the concrete type of attachment of silicon chip is: welding is connected with main grid, generally adopts the spot welding form to realize connecting.Can know that as general knowledge in the process of carrying out spot welding, pad place stress will increase, this stress is to be that spread towards periphery in the center of circle with the pad, and circle centre position stress is maximum.Greatly about about 1.5mm, welding and battery main grid first pad are also about 1.5mm like this apart from the back gauge of silicon chip for traditional battery main grid.Contact area is more little under the effect of identical power, and the pressure that receives is just big more, so main grid is more little apart from the back gauge of silicon chip, makes fragmentation of battery sheet or latent splitting more easily.
Please refer to Fig. 2, Fig. 2 is the structural representation of solar cell in the prior art.
In order to solve the problem that above-mentioned welding causes silicon chip to damage easily, a kind of like this solution is provided in the prior art: the end of main grid is designed to trapezium structure.Though so design can reduce the welding spoilage of silicon chip, so setting has not only increased the printing difficulty of main grid, and also making has increased the welding difficulty of welding.
In sum, how to solve the problem that silicon chip is damaged easily in welding, become those skilled in the art's problem demanding prompt solution.
The utility model content
The technical problem that the utility model will solve is the N type solar cell that provides a kind of main grid to have groove structure; The N type solar cell that this main grid has a groove structure is through the structure optimization to main grid on the silicon chip, can realize solving the purpose of the problem that silicon chip is damaged in welding easily.
For solving the problems of the technologies described above, the N type solar cell that the utility model provides a kind of main grid to have groove structure comprises wafer bulk; Said wafer bulk is provided with welding; Be coated with conductive coating on the said wafer bulk, said conductive coating comprises main grid and thin grid, and said main grid and said thin grid are cross-linked; Be connected with said welding on the said main grid
The end of said main grid is the end with hatch frame.
Preferably, the opening of the end of said main grid is a rectangular aperture.
Preferably, the opening length of the end of said main grid is 2mm to 5mm; The A/F of the end of said main grid is 1mm to 4mm.
Preferably, the opening of the end of said main grid is the gradual shrinkage opening.
Preferably, the opening of the end of said main grid is a trapezoid-shaped openings.
The N type solar cell that the utility model provides a kind of main grid to have groove structure; Be used to realize the conversion of photoelectricity; Comprise wafer bulk and welding, be coated with conductive coating on the wafer bulk (abbreviating silicon chip as), conductive coating comprises main grid and thin grid; Main grid is cross-linked with thin grid, is connected with welding on the main grid.Can be known that by prior art thin grid are used to collect the electric energy that disperses on the silicon chip, main grid is used for the electric energy on the thin grid is gathered, and welding is connected with main grid and is used for the electric energy on the silicon chip is exported.In order to solve the Welding Problems of welding and silicon chip, the utility model has been made following structure optimization with welding: the end of main grid is the end with hatch frame.This structural design can increase the distance of welding and battery main grid first pad and silicon chip edge, thereby the welding stress of silicon chip edge when reducing to weld effectively reduces the situation that the silicon chip that caused by welding when silicon chip and welding weld damages.And, adopt the hatch frame design can also reduce the slurry of main grid coating.The main grid that the utility model provided has the N type solar cell of groove structure, through the structure optimization to main grid on the silicon chip, can realize solving the purpose of the problem that silicon chip is damaged easily in welding.
Description of drawings
Fig. 1 is the structural representation of solar cell in the prior art;
Fig. 2 is the structural representation of improved solar cell in the prior art;
Fig. 3 has the structural representation of the N type solar cell of groove structure for main grid among a kind of embodiment of the utility model;
Among Fig. 1 and Fig. 2, the corresponding relation of component names and Reference numeral is:
Wafer bulk 1 ';
Main grid 2 '; End 2 ' a of main grid;
Thin grid 3 ';
The corresponding relation of component names and Reference numeral does among Fig. 3;
Wafer bulk 1;
Main grid 2; The end 2a of main grid;
Thin grid 3;
Embodiment
The core of the utility model is the N type solar cell that provides a kind of main grid to have groove structure; The N type solar cell that this main grid has a groove structure is through the structure optimization to main grid on the silicon chip, can realize solving the purpose of the problem that silicon chip is damaged in welding easily.
In order to make those skilled in the art understand the technical scheme of the utility model better, the utility model is done further to specify below in conjunction with accompanying drawing and specific embodiment.
Please refer to Fig. 3, Fig. 3 has the structural representation of the N type solar cell of groove structure for main grid among a kind of embodiment of the utility model.
The N type solar cell that the utility model provides a kind of main grid to have groove structure; Be used to realize the conversion of photoelectricity; Comprise wafer bulk 1 and welding, be coated with conductive coating on the wafer bulk 1 (the following silicon chip that abbreviates as), conductive coating comprises main grid 2 and thin grid 3; Main grid 2 is cross-linked with thin grid 3, is connected with welding on the main grid 2.Can be known that by prior art thin grid 3 are used to collect the electric energy that disperses on the silicon chip, main grid 2 is used for the electric energy on the thin grid 3 is gathered, and welding is connected with main grid 2 and is used for the electric energy on the silicon chip is exported.In order to solve the Welding Problems of welding and silicon chip, the utility model has been made following structure optimization with welding: the end 2a of main grid is the end with hatch frame.This structural design can increase the distance of welding and battery main grid 2 first pads and silicon chip edge, thereby the welding stress of silicon chip edge when reducing to weld effectively reduces the situation that the silicon chip that caused by welding when silicon chip and welding weld damages.And, adopt the hatch frame design can also reduce the slurry of main grid 2 coatings.When the end 2a that adopts main grid designs for hatch frame; If opening adopts the fine rule structure of rule to form opening; Perhaps directly adopt thin grid 3 to form the end 2a opening of main grid, also reduce the printing operation difficulty of main grid 2, from carrying the printing efficiency that improves main grid 2 indirectly.The main grid that the utility model provided has the N type solar cell of groove structure, through the structure optimization to main grid on the silicon chip 2, can realize solving the purpose of the problem that silicon chip is damaged easily in welding.
Because main grid 2 ends are hatch frame, so for the ease of the printing of main grid 2, in an embodiment of the utility model, the opening of the end 2a of main grid is a rectangular aperture.Adopt the regular hatch frame design of rectangular aperture, the operation that can conveniently print and realization.
Have at above-mentioned main grid on the architecture basics of N type solar cell of groove structure, the utility model is 2mm to 5mm with the opening Design of length of the end 2a of main grid; The A/F of the end 2a of main grid is designed to 1mm to 4mm.
Based on the design philosophy of dealing with problems in the foregoing description: the end 2a of main grid is designed to the end of hatch frame, and the utility model is the gradual shrinkage opening with the opening of the end 2a of main grid in another embodiment.
Particularly, the opening of the end 2a of main grid is a trapezoid-shaped openings.
More than a kind of main grid that the utility model provided is had a groove structure N type solar cell carried out detailed introduction.Used concrete example among this paper the principle and the execution mode of the utility model are set forth, the explanation of above embodiment just is used to help to understand the method and the core concept thereof of the utility model.Should be understood that; For those skilled in the art; Under the prerequisite that does not break away from the utility model principle, can also carry out some improvement and modification to the utility model, these improvement and modification also fall in the protection range of the utility model claim.

Claims (5)

1. a main grid has the N type solar cell of groove structure, comprises wafer bulk (1), and said wafer bulk (1) is provided with welding; Said wafer bulk is coated with conductive coating on (1); Said conductive coating comprises main grid (2) and thin grid (3), and said main grid (2) is cross-linked with said thin grid (3), and said main grid is connected with said welding on (2); It is characterized in that
The end of said main grid (2a) is for having the end of hatch frame.
2. have the N type solar cell of groove structure according to the said main grid of claim 1, it is characterized in that the opening of the end of said main grid (2a) is a rectangular aperture.
3. have the N type solar cell of groove structure according to the said main grid of claim 2, it is characterized in that the opening length of the end of said main grid (2a) is 2mm to 5mm; The A/F of the end of said main grid (2a) is 1mm to 4mm.
4. have the N type solar cell of groove structure according to the said main grid of claim 1, it is characterized in that the opening of the end of said main grid (2a) is the gradual shrinkage opening.
5. have the N type solar cell of groove structure according to the said main grid of claim 4, it is characterized in that the opening of the end of said main grid (2a) is a trapezoid-shaped openings.
CN2012200274099U 2012-01-20 2012-01-20 N-type solar battery with main grid with groove structure Expired - Lifetime CN202423321U (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103441156A (en) * 2013-09-06 2013-12-11 英利集团有限公司 Solar cell module and solar cell slice thereof
CN104241405A (en) * 2013-06-14 2014-12-24 新日光能源科技股份有限公司 Electrode structure of solar cell and manufacturing method thereof
CN108550637A (en) * 2018-06-22 2018-09-18 通威太阳能(安徽)有限公司 A kind of more main grid crystal silicon solar batteries back of the body electric field structures
CN108987495A (en) * 2018-08-27 2018-12-11 通威太阳能(合肥)有限公司 Interdigital full-half compatible front metal electrode
CN109192795A (en) * 2018-09-14 2019-01-11 苏州腾晖光伏技术有限公司 A kind of solar battery sheet
CN109920867A (en) * 2019-03-11 2019-06-21 天合光能股份有限公司 A kind of photovoltaic cell
CN110085696A (en) * 2019-04-19 2019-08-02 泰州隆基乐叶光伏科技有限公司 Solar cell piece, solar battery string and solar module

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241405A (en) * 2013-06-14 2014-12-24 新日光能源科技股份有限公司 Electrode structure of solar cell and manufacturing method thereof
CN104241405B (en) * 2013-06-14 2017-01-11 新日光能源科技股份有限公司 Electrode structure of solar cell and manufacturing method thereof
CN103441156A (en) * 2013-09-06 2013-12-11 英利集团有限公司 Solar cell module and solar cell slice thereof
CN103441156B (en) * 2013-09-06 2015-11-11 英利集团有限公司 A kind of solar module and solar battery sheet thereof
CN108550637A (en) * 2018-06-22 2018-09-18 通威太阳能(安徽)有限公司 A kind of more main grid crystal silicon solar batteries back of the body electric field structures
CN108550637B (en) * 2018-06-22 2023-07-25 通威太阳能(安徽)有限公司 Back electric field structure of multi-main-grid crystalline silicon solar cell
CN108987495A (en) * 2018-08-27 2018-12-11 通威太阳能(合肥)有限公司 Interdigital full-half compatible front metal electrode
CN109192795A (en) * 2018-09-14 2019-01-11 苏州腾晖光伏技术有限公司 A kind of solar battery sheet
CN109920867A (en) * 2019-03-11 2019-06-21 天合光能股份有限公司 A kind of photovoltaic cell
CN110085696A (en) * 2019-04-19 2019-08-02 泰州隆基乐叶光伏科技有限公司 Solar cell piece, solar battery string and solar module

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Granted publication date: 20120905

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