CN109192761B - Display panel and preparation method thereof - Google Patents

Display panel and preparation method thereof Download PDF

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Publication number
CN109192761B
CN109192761B CN201811015747.9A CN201811015747A CN109192761B CN 109192761 B CN109192761 B CN 109192761B CN 201811015747 A CN201811015747 A CN 201811015747A CN 109192761 B CN109192761 B CN 109192761B
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pixel
layer
reserved area
metal wiring
electrode
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CN109192761A (en
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卢马才
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2018/113347 priority patent/WO2020042338A1/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention provides a display panel and a preparation method thereof, wherein the display panel comprises: the bottom elastic packaging layer comprises a pixel reserved area corresponding to the pixel unit and a metal wiring reserved area corresponding to the space between two adjacent pixel units; the flexible substrate unit is arranged on the bottom elastic packaging layer corresponding to the pixel reserved area array; sequentially laminating a thin film transistor unit and the pixel unit on the flexible substrate unit to form independent and spaced display units; the signal routing is used for connecting two adjacent display units so as to realize the signal transmission of the two adjacent display units; the top elastic packaging layer is arranged on the surface of the display unit; the signal routing wires are arranged in a curve mode corresponding to the metal wiring reserved area and clamped on the surfaces of the bottom elastic packaging layer and the top elastic packaging layer.

Description

Display panel and preparation method thereof
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
At present, most of known flexible display screens can only carry out general bending deformation, cannot carry out elastic deformation such as spherical bending or stretching, and cannot be applied to applications requiring stretching deformation or spherical deformation. The LCD display screen is limited in backlight, the cell gap (box thickness) cannot be deformed greatly, so that the LCD display screen cannot be stretched and deformed, and the OLED display screen is difficult to elastically deform due to the fact that the OLED display screen is sensitive to water and oxygen and has strict packaging requirements.
Therefore, the prior art has defects and needs to be improved urgently.
Disclosure of Invention
The invention provides a display panel and a preparation method thereof, which can realize multi-dimensional deformation such as spherical deformation or stretching deformation of the display panel.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the invention provides a preparation method of a display panel, which comprises the following steps:
step S10, preparing a flexible substrate layer on a glass substrate, wherein the flexible substrate layer comprises a pixel reserved area corresponding to a pixel unit and a metal wiring reserved area corresponding to a space between two adjacent pixel units; patterning the flexible substrate layer to form bulges or depressions corresponding to the metal wiring reserved area;
step S20, sequentially forming thin film transistor units and pixel units distributed in an array at positions of the flexible substrate layer corresponding to the pixel reserved area, and forming signal traces connecting the thin film transistor units and the pixel units, where portions of the signal traces corresponding to the metal wiring reserved area are arranged in a curved shape on the protrusions or the recesses;
step S30, forming a top elastic encapsulation layer on the pixel unit, where the top elastic encapsulation layer corresponds to the pixel reservation region and the metal wiring reservation region;
and step S40, peeling the glass substrate to form the display panel with spherical deformation or tensile deformation.
According to an embodiment of the present invention, the metal wiring reserved area separates two adjacent pixel reserved areas, and the protrusions or the recesses are distributed at intervals between two adjacent pixel reserved areas.
According to an embodiment of the present invention, the shape of the portion of the signal trace corresponding to the space between two adjacent pixel reserved areas is matched with the shape of the protrusion or the recess.
According to an embodiment of the present invention, the step S20 includes the following steps:
step S201, preparing a thin film transistor layer on the flexible substrate layer, wherein the thin film transistor layer comprises a thin film transistor and a first type of signal routing prepared in an inorganic film layer, the thin film transistor is prepared in the pixel reserved area correspondingly, and before and after the first type of signal routing is arranged, the part of the inorganic film layer corresponding to the metal routing reserved area is removed to form the thin film transistor unit of the array.
According to an embodiment of the present invention, the step S20 further includes the following steps:
step S202, preparing a first electrode layer on the thin film transistor unit, forming a first electrode corresponding to the pixel reserved area after patterning, and forming a second signal wire arranged at an interval with the first electrode; the part of the second-type signal routing corresponding to the metal wiring reserved area is arranged on the protrusion or the recess in a curved shape and is insulated from the first-type signal routing;
step S203, preparing a pixel definition layer on the first electrode, removing the part of the pixel definition layer corresponding to the metal wiring reserved area in a patterning mode, and defining a pixel area in the pixel reserved area;
step S204, binding the micro light-emitting diode corresponding to the pixel region on the first electrode;
step S205, a second electrode layer is prepared on the micro light emitting diode, and a second electrode corresponding to the pixel reserved area is formed after patterning.
According to an embodiment of the present invention, the step S40 further includes the following steps:
step S401, attaching a carrying substrate to the surface of the top elastic packaging layer;
step S402, thinning the flexible substrate layer to remove the part of the flexible substrate layer corresponding to the metal wiring reserved area to form flexible substrate units distributed at intervals;
step S403, preparing a bottom elastic encapsulation layer on the flexible substrate unit, so that the signal routing corresponding to the metal wiring reserved area is clamped between the top elastic encapsulation layer and the bottom elastic encapsulation layer;
step S404, peeling off the carrier substrate.
The present invention also provides a display panel including:
the bottom elastic packaging layer comprises a pixel reserved area corresponding to the pixel unit and a metal wiring reserved area corresponding to the space between two adjacent pixel units;
the flexible substrate unit is arranged on the bottom elastic packaging layer corresponding to the pixel reserved area array;
sequentially laminating a thin film transistor unit and the pixel unit on the flexible substrate unit to form independent and spaced display units;
the signal routing is used for connecting two adjacent display units so as to realize the signal transmission of the two adjacent display units;
the top elastic packaging layer is arranged on the surface of the display unit;
the part of the signal wiring corresponding to the metal wiring reserved area is arranged in a curve mode and clamped on the surfaces of the bottom elastic packaging layer and the top elastic packaging layer, so that spherical deformation or stretching deformation of the display panel is achieved.
According to an embodiment of the present invention, the pixel unit includes a first electrode, a second electrode, and a micro light emitting diode sandwiched between the first electrode and the second electrode.
According to an embodiment of the present invention, the length of the portion of the signal trace corresponding to the metal wiring reserved area is greater than the distance between two adjacent pixel reserved areas.
According to an embodiment of the present invention, the material of the bottom elastic encapsulating layer and the material of the top elastic encapsulating layer are polydimethylsiloxane.
The invention has the beneficial effects that: compared with the existing display panel, the display panel and the preparation method thereof provided by the invention have the advantages that the thin film transistor unit and the binding micro light emitting diode (micro LED) are manufactured on the discrete flexible substrate unit to form the discrete display unit, the signal routing among the pixels is prolonged, and the display panel can be subjected to multi-dimensional deformation such as spherical deformation or stretching deformation without damaging the display characteristics of the panel through the elastic packaging layer for packaging, so that the requirements of specific occasions can be met.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention;
fig. 2A to 2I are schematic flow charts of a method for manufacturing a display panel according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 4 is a schematic diagram of signal routing of the display panel according to the embodiment of the present invention.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
The display panel of the invention can solve the technical problem that the display panel of the prior art can not meet the requirements of specific occasions due to the fact that multi-dimensional elastic deformation such as spherical bending or stretching can not be carried out.
As shown in fig. 1, a flow chart of a method for manufacturing a display panel according to an embodiment of the present invention is shown; fig. 2A to 2I are schematic flow diagrams of a manufacturing method of a display panel according to an embodiment of the present invention. The method comprises the following steps:
step S10, preparing a flexible substrate layer on a glass substrate, wherein the flexible substrate layer comprises a pixel reserved area corresponding to a pixel unit and a metal wiring reserved area corresponding to a space between two adjacent pixel units; patterning the flexible substrate layer to form bulges or depressions corresponding to the metal wiring reserved area;
specifically referring to fig. 2A to 2B, providing a glass substrate 20, and preparing a flexible substrate layer 21 on the glass substrate 20, where the flexible substrate layer 21 includes a pixel reserved area 210 corresponding to a pixel unit, and a metal wiring reserved area 211 corresponding to a space between two adjacent pixel units; and patterning the flexible substrate layer 21 to form a protrusion 21A or a recess 21B corresponding to the metal wiring reserved region 211. The metal wiring reserved area 211 separates two adjacent pixel reserved areas 210, and the protrusion 21A or the recess 21B is distributed at intervals between two adjacent pixel reserved areas 210.
The cross-sectional shapes of the protrusion 21A and the recess 21B can be trapezoidal, triangular, semicircular and the like; the projections 21A and the depressions 21B may be linearly spaced, or may be distributed in the shape of a curve, a circle, or the like. The shape, size and arrangement of the protrusion 21A and the recess 21B are not limited, as long as the length of the signal trace arranged at this position is greater than the linear distance between two adjacent pixel reservation regions 210.
As shown in fig. 2C, the following steps are further included after the step S10: preparing a buffer layer 22 on the flexible substrate layer 21, and removing the buffer layer 22 in a patterning mode in a portion corresponding to the metal wiring reserved area 211.
Step S20, sequentially forming thin film transistor units and pixel units distributed in an array at positions of the flexible substrate layer corresponding to the pixel reserved area, and forming signal traces connecting the thin film transistor units and the pixel units, where portions of the signal traces corresponding to the metal wiring reserved area are arranged in a curved shape on the protrusions or the recesses;
specifically, the step S20 includes the following steps:
step S201, preparing a thin film transistor layer on the flexible substrate layer, wherein the thin film transistor layer comprises a thin film transistor and a first type of signal routing prepared in an inorganic film layer, the thin film transistor is prepared in the pixel reserved area correspondingly, and before and after the first type of signal routing is arranged, the part of the inorganic film layer corresponding to the metal routing reserved area is removed to form the thin film transistor unit of the array.
As shown in fig. 2D, a thin film transistor layer is prepared on the buffer layer 22, wherein a film structure of the thin film transistor layer is the same as that in the prior art, and is not described herein again. It is to be noted that, before the first type signal trace 230 is routed, a portion of the inorganic film layer corresponding to the metal routing reserved area 211 is removed, and the first type signal trace 230 is directly routed at the positions of the protrusion 21A and the recess 21B of the flexible substrate layer 21. Certainly, after the first type of signal traces 230 are wired, the inorganic film layer in the thin film transistor layer may be further continuously prepared, and after the thin film transistor layer is prepared, the inorganic film layer covered by the portion, corresponding to the metal wiring reserved area 211, of the first type of signal traces 230 is removed, so that only the first type of signal traces 230 are reserved in the metal wiring reserved area 211, thereby forming the thin film transistor units 23 independent of each other.
The first-type signal traces 230 include, but are not limited to, scan lines and data lines connecting two adjacent thin film transistor units 23, as long as the signal traces laid in the process of forming the thin film transistor layers all belong to the first-type signal traces 230. The first type of signal traces 230 are arranged in a curved shape at a portion corresponding to the metal wiring reserved area 211, and it can be understood that different signal traces in the first type of signal traces 230 are arranged in an insulated manner.
Preferably, the shape of the portion of the first signal trace 230 corresponding to the space between two adjacent pixel reserved areas 210 matches with the shape of the protrusion 21A or the recess 21B.
After the thin film transistor unit 23 is manufactured, a flat layer 24 is manufactured on the surface of the thin film transistor unit 23, and the portion of the flat layer 24 corresponding to the metal wiring reserved area 211 is removed after patterning.
Step S202, preparing a first electrode layer on the thin film transistor unit, forming a first electrode corresponding to the pixel reserved area after patterning, and forming a second signal wire arranged at an interval with the first electrode; the part of the second-type signal routing corresponding to the metal wiring reserved area is arranged on the protrusion or the recess in a curved shape and is insulated from the first-type signal routing;
step S203, preparing a pixel definition layer on the first electrode, removing the part of the pixel definition layer corresponding to the metal wiring reserved area in a patterning mode, and defining a pixel area in the pixel reserved area;
step S204, binding the micro light-emitting diode corresponding to the pixel region on the first electrode;
step S205, a second electrode layer is prepared on the micro light emitting diode, and a second electrode corresponding to the pixel reserved area is formed after patterning.
In the steps S202 to S205, referring to fig. 2E, after the first electrode layer is patterned, a first electrode 250 corresponding to the pixel reserved area 210 is formed, and a first signal trace (not shown) spaced apart from the first electrode 250 is formed; the layout manner of the first signal traces is the same as that of the first type signal traces 230, and the first signal traces are directly disposed on the flexible substrate layer 21, which is not described herein again. Then, a pixel defining layer 26 is prepared and patterned on the first electrode layer, a portion of the pixel defining layer 26 corresponding to the metal wiring reserved area 211 is removed, and a pixel area is defined.
Then, the micro light emitting diode 251 is transferred to the pixel region and is bonded to the first electrode 250; since the pixel region cannot be filled with the small volume fraction of the micro light emitting diode 251, the pixel region outside the micro light emitting diode 251 may be filled with an inorganic material, an organic material, or an inorganic-organic hybrid material, which is not limited herein.
Then, a second electrode layer is prepared and patterned to form a second electrode 252 disposed opposite to the first electrode 250 and a second signal trace (not labeled in the figure) disposed at an interval with the second electrode 252, wherein the second signal trace and the first signal trace 230 are disposed in the same manner. The first electrode 250, the micro light emitting diode 251 and the second electrode 252 form a pixel unit 25, and the pixel unit 25 is electrically connected to the thin film transistor unit 23 to form a plurality of display units arranged at intervals.
The second type of signal traces include, but are not limited to, the first signal traces and the second signal traces, as long as the signal traces formed in the process of manufacturing the pixel unit 25 all belong to the second type of signal traces.
Step S30, forming a top elastic encapsulation layer on the pixel unit, where the top elastic encapsulation layer corresponds to the pixel reservation region and the metal wiring reservation region;
as shown in fig. 2F, a top elastic encapsulating layer 27 is formed on the pixel unit 25, where the top elastic encapsulating layer 27 corresponds to the pixel reservation region 210 and the metal wiring reservation region 211, that is, the top elastic encapsulating layer 27 encapsulates the entire display panel. It will be appreciated that the top elastic encapsulating layer 27 fills the gap between two adjacent display units and forms a relatively flat surface.
And step S40, peeling the glass substrate to form the display panel with spherical deformation or tensile deformation.
Wherein the step S40 further includes the steps of:
step S401, attaching a carrying substrate to the surface of the top elastic packaging layer;
specifically, as shown in fig. 2G, the glass substrate 20 is peeled off from the flexible substrate layer 21, and then a carrier substrate 28 is attached to the surface of the top elastic encapsulating layer 27 through an adhesive layer.
The following steps are also included after the step S401:
step S402, thinning the flexible substrate layer to remove the part of the flexible substrate layer corresponding to the metal wiring reserved area to form flexible substrate units distributed at intervals;
specifically, as shown in fig. 2H, after the flexible substrate layer 21 is thinned, an independent flexible substrate unit 21C corresponding to the pixel reservation region 210 is formed.
Step S403, preparing a bottom elastic encapsulation layer on the flexible substrate unit, so that the signal routing corresponding to the metal wiring reserved area is clamped between the top elastic encapsulation layer and the bottom elastic encapsulation layer;
step S404, peeling off the carrier substrate.
Specifically, as shown in fig. 2I, a bottom elastic encapsulating layer 29 is prepared on a surface of the flexible substrate unit 21C opposite to the pixel unit 25, the bottom elastic encapsulating layer 29 corresponds to the pixel reservation region 210 and the metal wiring reservation region 211, and the carrier substrate 28 is peeled off. The first type signal traces 230 and the second type signal traces between two adjacent display units are sandwiched between the top elastic packaging layer 27 and the bottom elastic packaging layer 29.
Because the display units of the display panel are designed in a discrete mode, the signal wiring between the two display units is prolonged, and the display units and the signal wiring are protected by the elastic packaging layer, the display panel can realize multi-dimensional deformation such as spherical deformation or stretching deformation without damaging the display characteristics of the panel.
In another embodiment, a method for manufacturing the display panel is different from the above embodiment in that: the manufacturing method of this embodiment does not include the steps S401 to S404 in the above embodiment; that is, in this embodiment, after the top elastic encapsulation layer is formed, the glass substrate is peeled off to form the display panel with spherical deformation or tensile deformation. The signal routing clamp is arranged between the top elastic packaging layer and the flexible substrate layer, and the flexible substrate layer has flexible characteristics, so that the display panel is not influenced to carry out multi-dimensional deformation.
As shown in fig. 3, a schematic view of a display panel structure provided in an embodiment of the present invention is shown, where the display panel includes: the bottom elastic packaging layer 30 comprises a pixel reserved area corresponding to a pixel unit and a metal wiring reserved area corresponding to the space between two adjacent pixel units; the flexible substrate unit 31 is arranged on the bottom elastic packaging layer 30 corresponding to the pixel reserved area array; thin film transistor units and the pixel units are sequentially stacked on the flexible substrate unit 31 to form independent display units 32; the pixel unit comprises a first electrode, a second electrode and a micro light-emitting diode, wherein the first electrode and the second electrode are oppositely arranged, and the micro light-emitting diode is clamped between the first electrode and the second electrode; the signal routing 33 is used for connecting two adjacent display units 32 to realize signal transmission of the two adjacent display units 32; a top elastic packaging layer 34 disposed on the surface of the display unit 32; the signal traces 33 are disposed in a curve corresponding to the metal wiring reserved area, and are sandwiched between the bottom elastic packaging layer 30 and the top elastic packaging layer 34, so as to realize spherical deformation or tensile deformation of the display panel.
Preferably, the length of the portion of the signal trace 33 corresponding to the metal wiring reserved area is greater than the distance between two adjacent pixel reserved areas.
Preferably, the material of the bottom elastic encapsulating layer 30 and the top elastic encapsulating layer 34 is polydimethylsiloxane.
For a specific film structure of the display panel, please refer to fig. 2A to 2I and the description in the above embodiments, which are not repeated herein.
As shown in fig. 4, a signal routing wiring diagram of the display panel according to the embodiment of the present invention is shown; the display panel comprises a pixel reserved area 43 and a metal wiring reserved area 45 corresponding to the outside of the pixel reserved area 43, wherein a thin film transistor 44 and pixel units are prepared corresponding to the pixel reserved area 43 to form separately arranged display units, the signal wiring is connected with two adjacent display units, and the part of the signal wiring corresponding to the metal wiring reserved area 45 is arranged in a curve mode, so that the wiring length of the part of the signal wiring corresponding to the metal wiring reserved area 45 is greater than the straight line distance between two adjacent pixel reserved areas 43. The signal traces include, but are not limited to, high potential source lines 41, scan lines 42, and data lines 40.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.

Claims (9)

1. A method for manufacturing a display panel, the method comprising:
step S10, preparing a flexible substrate layer on a glass substrate, wherein the flexible substrate layer comprises a pixel reserved area corresponding to a pixel unit and a metal wiring reserved area corresponding to a space between two adjacent pixel units; patterning the flexible substrate layer to form bulges or depressions corresponding to the metal wiring reserved area;
step S20, sequentially forming thin film transistor units and pixel units which are distributed in an array manner at positions of the flexible substrate layer corresponding to the pixel reserved areas, and forming signal wires which are connected with the thin film transistor units and the pixel units, wherein the parts of the signal wires corresponding to the metal wiring reserved areas are arranged on the bulges or the depressions in a curved manner, and the length of the parts of the signal wires corresponding to the metal wiring reserved areas is greater than the distance between two adjacent pixel reserved areas;
step S30, forming a top elastic encapsulation layer on the pixel unit, where the top elastic encapsulation layer corresponds to the pixel reservation region and the metal wiring reservation region;
and step S40, peeling the glass substrate to form the display panel with spherical deformation or tensile deformation.
2. The manufacturing method of claim 1, wherein the metal wiring reserved area separates two adjacent pixel reserved areas, and the protrusions or the depressions are distributed at intervals between the two adjacent pixel reserved areas.
3. The manufacturing method according to claim 2, wherein a shape of a portion of the signal trace corresponding to a space between two adjacent pixel reserved areas matches a shape of the protrusion or the recess.
4. The method as claimed in claim 1, wherein the step S20 includes the steps of:
step S201, preparing a thin film transistor layer on the flexible substrate layer, wherein the thin film transistor layer comprises a thin film transistor and a first type of signal routing prepared in an inorganic film layer, the thin film transistor is prepared in the pixel reserved area correspondingly, and before and after the first type of signal routing is arranged, the part of the inorganic film layer corresponding to the metal routing reserved area is removed to form the thin film transistor unit of the array.
5. The method for preparing a composite material according to claim 4, wherein the step S20 further includes the steps of:
step S202, preparing a first electrode layer on the thin film transistor unit, forming a first electrode corresponding to the pixel reserved area after patterning, and forming a second signal wire arranged at an interval with the first electrode; the part of the second-type signal routing corresponding to the metal wiring reserved area is arranged on the protrusion or the recess in a curved shape and is insulated from the first-type signal routing;
step S203, preparing a pixel definition layer on the first electrode, removing the part of the pixel definition layer corresponding to the metal wiring reserved area in a patterning mode, and defining a pixel area in the pixel reserved area;
step S204, binding the micro light-emitting diode corresponding to the pixel region on the first electrode;
step S205, a second electrode layer is prepared on the micro light emitting diode, and a second electrode corresponding to the pixel reserved area is formed after patterning.
6. The method for preparing a composite material according to claim 1, wherein the step S40 further includes the steps of:
step S401, attaching a carrying substrate to the surface of the top elastic packaging layer;
step S402, thinning the flexible substrate layer to remove the part of the flexible substrate layer corresponding to the metal wiring reserved area to form flexible substrate units distributed at intervals;
step S403, preparing a bottom elastic encapsulation layer on the flexible substrate unit, so that the signal routing corresponding to the metal wiring reserved area is clamped between the top elastic encapsulation layer and the bottom elastic encapsulation layer;
step S404, peeling off the carrier substrate.
7. A display panel, comprising:
the bottom elastic packaging layer comprises a pixel reserved area corresponding to the pixel unit and a metal wiring reserved area corresponding to the space between two adjacent pixel units;
the flexible substrate unit is arranged on the bottom elastic packaging layer corresponding to the pixel reserved area array;
sequentially laminating a thin film transistor unit and the pixel unit on the flexible substrate unit to form independent and spaced display units;
the signal routing is used for connecting two adjacent display units so as to realize the signal transmission of the two adjacent display units;
the top elastic packaging layer is arranged on the surface of the display unit;
the part of the signal routing corresponding to the metal wiring reserved area is arranged in a curve mode and clamped on the surfaces of the bottom elastic packaging layer and the top elastic packaging layer, and the length of the part of the signal routing corresponding to the metal wiring reserved area is larger than the distance between every two adjacent pixel reserved areas, so that spherical deformation or stretching deformation of the display panel is achieved.
8. The display panel according to claim 7, wherein the pixel unit comprises a first electrode, a second electrode and a micro light emitting diode sandwiched between the first electrode and the second electrode, wherein the first electrode and the second electrode are arranged oppositely.
9. The display panel of claim 7, wherein the material of the bottom elastic encapsulating layer and the top elastic encapsulating layer is polydimethylsiloxane.
CN201811015747.9A 2018-08-31 2018-08-31 Display panel and preparation method thereof Active CN109192761B (en)

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