CN1091867A - Inverter - Google Patents
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- CN1091867A CN1091867A CN93120369A CN93120369A CN1091867A CN 1091867 A CN1091867 A CN 1091867A CN 93120369 A CN93120369 A CN 93120369A CN 93120369 A CN93120369 A CN 93120369A CN 1091867 A CN1091867 A CN 1091867A
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- semiconductor switch
- switch module
- thyristor
- buffer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A kind of inverter that adopts the thyristor of energy high-frequency drive, by making buffer condenser and buffering diode opposed with semiconductor switch module steppedly, reduce wiring inductance and buffering electric capacity between them, and by semiconductor switch module is become to be assembled in same absorber plate, make the absorber plate heat load even, it is little that thereby cooler can be done, and reaches whole inverter miniaturization.In addition, be divided into power model by each phase converter main circuit, and can from framework, take out on demand, easy to maintenance to guarantee.
Description
The present invention relates to inverter, for example about being applicable to the inverter of electric car or electric locomotive etc.
As the dynamical system that drives electric car, inverter makes the mode of variable speed drive induction motor be able to practicality.
Such Electric inverter for example is divided into motor in the electric car of many axletrees, because of being fitted in the space limited under the vehicle floor, so require to make the little device of trying one's best.Equally, in the electric locomotive because of the total capacity that is contained in 1 inverter group on the locomotive becoming big, just wish each inverter miniaturization.
For satisfying this requirement, electric car drove the thyristor of the converter main circuit of usefulness in the past, as real flat 2-75738 communique or " the GTO-Stromrichter fuer Bahnen:SIEMENS of opening of Japan, Sonderdruck aus ZEV-Glasers Annalen 113(1989) Nr.6/7 juni/juli 259-272 page or leaf " document etc. put down in writing like that, adopt silicon contralled rectifier for cutting off gate circuit (GTO controllable silicon).Because it is than bipolar transistor (BT), igbt thyristors such as (IGBT), withstand voltage all big with allowable current, can make the miniaturization of converter main circuit part.
On the other hand, for suppressing the high order harmonic component composition of output waveform, put down in writing as above-mentioned (GTO-Stromrichter fuer Bahnen) document, proposed the direct voltage of 3 level is made switch and produced the scheme that exchanges what is called 3 electrical level inverters of exporting (also claiming the neutral-point-clamped inverter).The structure of 1 phase converter main circuit of this 3 electrical level inverter have a pair of connection DC power supply direct-flow input end, connect the DC power supply neutral point neutral terminal, be connected on the 1st to the 4th thyristor series circuit between a pair of direct current input terminal, be connected between the 1st and the 2nd thyristor tie point and the neutral terminal respectively and the clamping diode between the 3rd and the 4th thyristor tie point and the neutral terminal, and ac output end that is connected to the 2nd and the 3rd thyristor tie point.
In addition, GTO silicon controlled switching loss is big, for improving cooling effectiveness, as described in above-mentioned communique, document, the GTO controllable silicon is made disc, two sides with its disk is a main electrode, again the conductivity cooling-part is distinguished pressure welding on these main electrodes, uses the cooler of circulation evaporability refrigerant structure in this cooling-part.For guaranteeing clamping GTO silicon controlled both sides cooling-part each other and the insulation between refrigerant condensation part and the GTO controllable silicon, the refrigerant that employing has insulating properties.For the refrigerant that satisfies this necessary condition, main in the past the fluorine Lyons of adopting with good cooling performance and insulation property.
Yet because the loss of GTO silicon controlled element switch is big, and the value of buffer condenser that voltage rises when being used to suppress circuit and disconnecting and buffering resistor is big, and switching frequency is done not high, and Shi Yong GTO controllable silicon is the highest in the past has only 500Hz.Therefore, when constituting the inverter that drive motor uses with the GTO controllable silicon, even adopt above-mentioned 3 electrical level inverters, reducing of output waveform high order harmonic component distortion is also limited, and be big thereby the current pulsation of motor becomes, and has the big problem of electric electromechanics magnetic noise.
So, consider to use improve the thyristor that the available high-frequency impulse gate signals such as controllable silicon of bipolar transistor, igbt (IGBT), the MOS gate control of switching frequency drive (below be referred to as the high-frequency semiconductor switch element).
Yet, be put to practical element as these high-frequency semiconductor switch elements, generally because of withstand voltage degree low (for example general IGBT is 1200V), so line voltage distribution is will connect in the electric car of direct current 1500V to use a plurality of elements.In addition, Shi Yong high-frequency semiconductor switch element, general current value is less, if be used for the big capacity inverter of Electric (for example being used to drive single-machine capacity is the above motor of 200KW), then wants a plurality of elements that use in parallel.
Therefore, when high frequency thyristors such as IGBT were applied to the Electric inverter, converter main circuit partly had the tendency of maximization, so require apparatus structure is worked hard, made the miniaturization on the whole of Electric inverter.
Also have, in the cooling system miniaturization of wishing high frequency thyristors such as IGBT, consider, also wish to adopt the type of cooling of the replacement fluorine Leon vaporization type of cooling from the viewpoint that prevents public hazards.
In addition, then intricate with relevant wiring if seek small-sized property merely because of the member setting, the problem that exists maintainabilities such as inspection, repairing to degenerate.Especially the Electric inverter because of being contained in narrow and small place under the electric car floor, must take into full account maintainability.
The 1st purpose of the present invention is to provide and can improves switching frequency, reduces the inverter that output current is pulsed and made whole equipment miniaturization.
The 2nd purpose of the present invention is to provide and makes the miniaturization of cooler energy again except that the 1st purpose, simultaneously can be without the inverter of freon refrigerant.
The 3rd purpose of the present invention is to provide the inverter of guaranteeing again for ease of maintenaince except that the 1st, the 2nd purpose.
This realization above-mentioned purpose, feature of the present invention are to constitute in order to lower member.
For realizing 1 purpose, the 1st of inverter of the present invention is characterised in that: a plurality of thyristors that constitute converter main circuit, with the element that comparable GTO controllable silicon higher frequency drives, allow the buffer condenser of the buffer circuit that forms this thyristor put with and on the position of this semiconductor switch of clamping in the face of connecting object thyristor mounting support face.
For realizing the 2nd purpose, the 2nd of inverter of the present invention is characterised in that: allow a plurality of thyristors of forming 3 phase converter main circuits be contained on the thermal conductivity base plate by insulating component respectively and form semiconductor switch module, a plurality of this semiconductor switch modules are contained in the one side of same conductivity absorber plate by each with dividing mutually.
In the case, preferably allow the semiconductor switch module that is contained in 1 phase on the absorber plate, by interconnected sequence arrangement.
Also having, by the cooler of absorber plate cooling semiconductor switch module, is the vaporization cooling type of refrigerant in order to water preferably.
For realizing above-mentioned the 3rd purpose, the 3rd of inverter of the present invention is characterised in that: divide the member and the gate driver of 3 phase converter main circuits mutually by each, and per 1 pack into mutually same supporting frame forms power model, this power model common framework of packing into with loading and unloading.
In the case, each phase power model preferably includes: a plurality of semiconductor switch modules of the series connection of 1 phase of converter main circuit, form each semiconductor switch module with the buffer condenser of buffer circuit with the buffering diode, the heater that comprises semiconductor switch module is made the cooler of cooling and the binding post that carries out relevant wiring with the part outside this power model is formed member.And, preferably respectively thyristor is contained on the thermal conductivity base plate and forms semiconductor switch module by insulating component, simultaneously by this base plate, be contained in the one side of same conductivity absorber plate, the another side thermal conductivity of this absorber plate connects cooler and makes this cooler be positioned at the framework outside, allows absorber plate releasably be contained on this framework.Preferably allow buffer condenser and buffering diode place on the position of clamping semiconductor switch module again, and the terminal of buffer condenser and buffering diode is located at main electrode terminal part near the connecting object semiconductor switch module in the face of absorber plate.
Preferably allow the supporting frame supporting of power model constitute the buffer resistance device of buffer circuit and the filtering capacitor of formation converter main circuit.
The framework of preferably vertically absorber plate being packed into, and make the semiconductor switch module that is contained in 1 phase on this absorber plate by series sequence along vertically to arrangement.
Preferably will be connected in parallel on filtering capacitor on the DC power supply of converter main circuit each power model of packing into, and place on the position of clamping buffer condenser in the face of semiconductor die sinking piece.
By formation like this,, will reach above-mentioned each purpose because of following effect if utilize the present invention.
Basically, the present invention can reduce the pulsation of output current than the thyristor (being designated hereinafter simply as the high-frequency semiconductor switch element) of GTO controllable silicon higher frequency driving because of adopting, and improves electromagnetic noise.And avoided maximizing because of the device that uses this high-frequency semiconductor switch element to cause, as following, reached the purpose that makes the inverter miniaturization.
At first, as the high-frequency semiconductor element, known have a controllable silicon that bipolar transistor, IGBT, MOS door control etc., and these high-frequency semiconductor switch elements are littler than GTO controllable silicon because of switching loss, can high-frequency work.For example under the IGBT situation, can in the 500Hz-3KHz scope, select switching frequency.And the switching loss of IGBT is the part of GTO when 500Hz, is 1/tens of GTO during 3KHz.
Again because the high-frequency semiconductor switch element than the GTO controllable silicon, door drives desired power not, can make gate driver do for a short time, helps the miniaturization of whole device.
Again since the high-frequency semiconductor switch element than the GTO controllable silicon, safety operation area field width when circuit disconnects (for example, because of allowable voltage growth rate height), can make the capacity of buffer condenser little, thereby the buffering loss that consumes on the buffer resistance device also diminishes, for example, and under the situation of IGBT, than the GTO controllable silicon, the electric capacity of buffer condenser can be it more than 1/10.
But, then fast than GTO controllable silicon if reduce the electric capacity of buffer condenser merely because of high-frequency semiconductor switch element current cut-off speed, easily add the problem of big crest voltage and overshoot voltage when existing circuit to disconnect on the element.Especially under the situation of IGBT, because of current cut-off speed becomes problem than fast 1 of GTO controllable silicon more than the order of magnitude.
This crest voltage be because converter main circuit and wiring inductance that mainly be buffer circuit has accumulated electromagnetic energy.Therefore, in order to suppress crest voltage in the area of safety operaton of thyristor, the wiring inductance that reduces buffer circuit seems very important.
So, according to the 1st feature of the present invention, allow buffer condenser place on the position of this semiconductor switch of clamping in the face of the bearing-surface that the connecting object thyristor is installed, its connecting wiring is shortened as far as possible.The result reduces wiring inductance, reduces crest voltage, thereby can reduce the electric capacity of buffer condenser, promotes equipment miniaturization.
In the case, preferably thyristor is contained on the thermal conductivity base plate, and this element main electrode terminal is located at the opposite of base plate, buffer condenser is contained on the position of this buffer condenser terminal near the main electrode terminal of connecting object thyristor.The wiring inductance that can make buffer circuit thus is for minimum.
Also have,, promptly be not to be contained in, but dress up 2 layers of hierarchic structure, so promoted the miniaturization of whole device with on the one side because of thyristor and buffering capacitor are done three-dimensional installation.
On the other hand, 1 of converter main circuit comprises the upper arm that connects direct power supply and the thyristor of underarm mutually.Because the not work of conducting simultaneously of these thyristors is so the heating cycle of these elements is not overlapping.
Therefore,,, and cooler is connected on the another side of this absorber plate with heat conduction, then can makes the heat load amount of cooler even if be contained on the one side of same absorber plate after semiconductor switch module divided mutually by each as second feature of the present invention.The result can make the cooler miniaturization, thereby promotes whole equipment miniaturization.
In addition, when the thyristor of 1 phase being contained in same conductivity absorber plate, must making between each element and insulate, and absorber plate must make the insulation of element and absorber plate when being earthing potential.About this point, be to make each thyristor to be contained on the thermal conductivity base plate by insulating component separately, guarantee interelement and over the ground between insulation.
Like this,, promptly use the cooler of cooling of evaporation formulation, also need not bother about its refrigerant insulating properties, so can use refrigerant such as non-harmful water because of each thyristor constitutes insulation respectively.
The semiconductor switch module that special hope will be contained in 1 phase on the absorber plate is arranged by mutual series sequence.Can shorten the wiring of main circuit thus, reduce wiring inductance, thereby can reduce the overshoot voltage of thyristor when circuit disconnects, the result can impel the buffer condenser miniaturization.That is to say that the overshoot voltage that thyristor produces depends primarily on from thyristor and sees the electromagnetic energy that accumulates the wiring inductance of converter main circuit in the past when circuit disconnects.
As mentioned above, the thyristor that for example ought make 1 phase is contained on the same absorber plate, and the while is dressed up buffer condenser to thyristor stepped, checks that then maintainabilities such as repairing degenerate.
This point, the 3rd feature according to the present invention is made power model by the converter main circuit division of per 1 phase, this power model is releasably packed in the common framework, so by unload necessary power model from framework, just can check each part easily during maintenance, improve maintainability.Especially pack into behind the gate driver, just can carry out the work test of thyristor easily.Even carry out the work test with gate driver, must prepare various test gate drivers in advance, make it then needn't prepare various test gate drivers like that with the present invention corresponding to thyristor door characteristic and capacitance etc. with test.
Also have, because of 1 be the unimodular blocking mutually,, also need only and change malfunctioning module and just can repair rapidly even when part breaks down.Spare part can also be not a unit with the inverter, and is that unit prepares with the power model.With 1 is that the power model divided of unit is low weight again mutually, can carry with simple tool.
The crest voltage of above-mentioned thyristor when circuit disconnects and overshoot voltage also are subjected to being connected the influence of the wiring inductance of the filtering capacitor that is connected in parallel on the converter main circuit DC power supply and thyristor.Therefore,, make on its position that places clamping buffer condenser, just can further reduce crest voltage, and buffer condenser electric capacity is reduced in the face of semiconductor switch module by this filtering capacitor is disperseed each power model of packing into mutually by each.And, be provided with like this and can improve the space availability ratio that the stereo structure structure is provided with, make whole equipment miniaturization.The result makes miniaturization reach interior degree such as the confined space that can be arranged on electric car.
Following according to illustrated embodiment explanation the present invention.
The Electric inverter of one embodiment of the invention is described with Fig. 1 to Figure 10.Fig. 1 is the major part structure chart of a phase of Electric inverter; Fig. 2 be among Fig. 1 arrow II-II to the structure chart of being looked; Fig. 3 is the whole system structure chart of the Electric inverter of present embodiment; Fig. 4 is the structure chart of the converter main circuit of 1 phase; Fig. 5 is the overall appearance rearview of Electric inverter 1 shown in Figure 3; Fig. 6 is that Fig. 5 arrow VI-VI is to the profile of being looked; Fig. 7 represents present embodiment Electric inverter is fitted in the state of electric car underfloor; Fig. 8 cuts present embodiment semiconductor switch module structure division open oblique view that the back is showed; Fig. 9 be expression semiconductor switch module and clamping diode on absorber plate setting and their enlarged drawing that is electrically connected; Figure 10 represents the overlapping relation of semiconductor switch module and the stepped setting of buffering capacitor.
Referring to Fig. 3 to Fig. 7, the general structure and the converter main circuit of present embodiment Electric inverter is described earlier.
As shown in Figure 3, the used electric car drive unit of present embodiment Electric inverter is made of 4 induction motor M1, M2, M3, M4.Corresponding these 4 induction motors are provided with 2 inverters 1 that structure is identical
A, 1
B, make inverter 1
ADriven induction motor M
1, M
2, and inverter 1
BDriven induction motor M
3, M
4Each inverter 1
A, BStructure comprise separately 3 phase converter main circuits divided the power model PU that forms mutually by each
1-PU
3Each power model PU
1-PU
3Side's direct-flow input end (P), be connected to pantograph 2 through circuit breaker 3, release-push 4A, B and filter reactance coil 5A, B, and the opposing party's direct-flow input end (N) ground connection.
As shown in Figure 4, the main circuit of each power model PU1-PU3 is used " 3 electrical level inverter circuit ".Fig. 4 shows the main circuit of 1 phase of inverter, and among a pair of direct current input terminal P, the N, P is connected to the DC line of connection layout 3 pantographs 2, N ground connection.2 filtering capacitor CF
1, CF
2Sequential circuit be connected on the sub-P of this a pair of direct-flow input end, the N filtering capacitor CF
1And CF
2Tie point be the neutral point of DC power supply, O is connected with neutral terminal.4 semiconductor switch module SM
1-SM
2Series circuit be connected between a pair of direct current input terminal P, the N.Each semiconductor switch module SM
1-SM
4Respectively by IGBTQ
1-Q
4With bypass diode DF
1-DF
4Reverse parallel connection and constituting.Semiconductor switch module SM
1And SM
2Tie point and semiconductor switch module SM
3And SM
4Tie point respectively by clamping diode DC
1And DC
2Connect neutral terminal O.And, semiconductor switch module SM
2And SM
3Tie point meet the sub-M of ac output end.Buffer circuit is by buffer condenser CS
1, CS
2, buffering diode DS
1, DS
2, buffer resistance device RS
1-RS
3Constitute.Buffer condenser CS
1, CS
2Respectively with 3 capacitor C
11-C
13, C
21-C
23Connect into triangle and constitute buffer condenser CS
1, CS
2Also can respectively 3 capacitors be connected into star and the equivalence formation.In addition, each semiconductor switch module SM
1-SM
4Each, the gate pulse that input is amplified through gate driver GD.
As shown in Figure 5, the general structure of present embodiment Electric inverter 1 is: in common framework 6, be the center with control unit CU-A, B and auxiliary equipment AU-A, B, the power model PU1-PU3 of inverter 1A, B is arranged on both sides symmetrically.The profile of Electric inverter 1 is such as shown in Figure 6, and the part of cooling device 53,54 is configured to give prominence to the outside in framework 6 fronts.As shown in Figure 7, the Electric inverter 1 of Gou Chenging like this can be consistent with the electric car travel direction by making its length direction, and allow a plurality of liftings of being located at framework 6 tops connect hook 7 to hang under the floor of electric car vehicle 8 central portions and install.And, will there be the one side of cooler 53,54 to install towards the outside of vehicle 8.
Below referring to Fig. 1 and Fig. 2 the concrete structure of power model PU is described.Fig. 1 is being seen major part structure chart from the side of power model.Fig. 2 is that arrow II-II from Fig. 1 is to the structure chart of being looked.
As shown in these figures, semiconductor switch module SM1-SM4 is formed in parallel by two semiconductor switch modules respectively, and with these two switch modules laterally side by side.The semiconductor switch module SM1 of positive arm and SM2 are installed in the surface of the 1st absorber plate 31 vertically side by side, the semiconductor switch module SM of negative arm
3And SM
4Vertically be installed in the surface of the 2nd absorber plate 32 side by side.Clamping diode DC is equipped with on the surface of each absorber plate
1And DC
2Clamping diode DC
1, DC
2Also constitute by 2 diodes in parallel.
Semiconductor switch module SM
1-SM
4Be same structure, making among Fig. 8 part, to cut oblique view shown in the back open such.That is to say, on the base plate made from thermal conductive resin materials such as copper 61, load insulation boards 62 such as aluminium oxide, load conductivity the 1st main electrode 63 that copper coin etc. is made on this insulation board 62, load the conductivity thermal stress attenuating plate 64 that polylith molybdenum etc. is made on this main electrode 63, load IGBT element 65 on each thermal stress attenuating plate 64, and on the 1st main electrode 63, load conductivity the 2nd main electrode 66 that copper coin etc. is made, all constitute with insulation crust 67 housings again.A pair of main electrode terminal 68 and door terminal 69 are arranged to expose the outside at insulation crust 67.Also have the not shown bypass diode DF that is connected in reverse parallel on the IGBT element (Q) 65 also to be loaded on the 1st main electrode 63.And, make the 1st, the 2nd absorber plate 31,32 be close to installation by the bolt hole 70 that is located on the base plate 61.As shown in Figure 9, configuring semiconductor switch module SM on the absorber plate 31,32
1-SM
2With clamping diode DC
1, DC
2, and connect with conductor 11-16 by Fig. 4 circuit structure.
The good materials of thermal conductivity such as the 1st and the 2nd absorber plate 31,32 usefulness aluminium are made.Each absorber plate is fastened on bolt 34 and makes on the rectangular box-like power model supporting frame 33.
The peripheral position of this power model supporting frame 33 is provided with flange part 35, and forms the mount pad 37 of frame shape at the peripheral position of framework lateral opening portion.Be fastened on the mount pad 37 by the flange part 35 of sealing gasket 39 with bolt 38 again the power model supporting frame, thereby power model supporting frame 33 is contained on the framework 6, promptly form the part side of framework 6 with absorber plate 31,32 and power model supporting frame 33, it is airtight to utilize sealing gasket 39 to guarantee.
Part supporting member 40 places the clamping semiconductor switch module SM in the face of absorber plate 31,32
1-SM
4The position on.This part supporting member 40 relies on arm board member 41 to be fixed on the power model supporting frame 33.Make buffer condenser CS again
1-CS
2And buffering diode DS
1-DS
2With semiconductor switch module SM
1-SM
4Be contained in opposed to each other on this part supporting member 40.As shown in figure 10, it is approaching mutually that the overlapping relation of these member settings is decided to be the terminal that will make connecting object.Therefore, the wiring of buffer circuit can be installed with beeline.
The terminal disc 42-45 that is made of insulating material such as epoxy resin is installed on the position, opposite of this part supporting member 40, and these terminal discs 42-45 is supporting the sub-P of direct-flow input end, N, neutral terminal O, AC input terminal M.On the next door of terminal disc 42-45, with current transformer CT and gate driver GD(GD
1, GD
2) be contained on the part supporting member 40.Filtering capacitor CF
1, CF
2Be arranged on the lower side space of these CT and GD.In addition, gate driver GD
1And GD
2Corresponding with the positive and negative side of semiconductor switch module respectively.
Respectively by many heat pipes 51 be contained in the cooler 53,54 that the fin 52 on this heat pipe 51 constitutes and be contained in heat conduction on the absorber plate 31,32.Make heat pipe 51 with thermal conductivity such as copper and the good material of processability, enclose water in the pipe, and make low temperature under with the negative pressure adjustment and easily to vaporize, and reach and do not sneak into non-condensing gas as the cooling of evaporation agent.
Under the situation of present embodiment, heat pipe 51 curves L shaped, a side straight-tube portion is imbedded done thermal conductivity connection back in the absorber plate 31,32 as evaporation part 51a, allows absorber plate support heat pipe 51 simultaneously.The opposing party's straight-tube portion is arranged to be inclined upwardly slightly, on this part, loads onto polylith fin 52 backs as condensation part 51b.In addition, connect the front end of condensation part 51b, and this centre frame is fixed on absorber plate 31,32 or the power model supporting frame 33, allow the vibration of heat pipe 51 and the inverter main body be same vibrational system with centre frame 55.
Then be the work of the Electric inverter that constitutes like this of center explanation with feature of the present invention portion.
Allow present embodiment Electric inverter produce drive controlling gate pulse (list of references: " a kind of novel neutral-point-clamped PWM inverter " (ANew Neutral-Point-Clamped PWM Inverter by the groundwork of well-known 3 electrical level inverters with the not shown PWM control device of control unit CU, IEEE Transactions on industry applications vol.1A-17, No.5, September/October1981)).That is to say that the groundwork of 3 electrical level inverters makes semiconductor switch module SM by following 3 kinds of conduction modes
1-SM
4Q
1-Q
4Switching, and export 3 level voltages selectively at the sub-M of ac output end place.At this hypothesis direct current full voltage is that Ed v, neutral point voltage are Ed/2 v.
Q
1Q
2Q
3Q
4Output voltage
The 1st conduction mode is Ed absolutely all
The open close break-make Ed/2 of the 2nd conduction mode
The 3rd conduction mode absolutely all 0
As shown in figure 11, utilize 3 such electrical level inverters, than 2 common electrical level inverters, the voltage level progression of output voltage pulse increases, and obviously can improve switching frequency, thereby can reduce high order harmonic component.Because of making thyristor with IGBT, can make the switching frequency scope improve into 500z-3KHz again, this point also helps suppressing high order harmonic component, can reduce electromagnetic noise.
Then, by allowing buffer condenser CS
1, CS
2With buffering diode DS
1-DS
2Place respectively with connecting object semiconductor switch module SM
1-SM
4Near and opposed position on, reduce the wiring inductance of buffer circuit, reduce crest voltage, can make the buffer condenser miniaturization thus, and then can make whole equipment miniaturization.
The semiconductor switch module SM of Figure 12 presentation graphs 4
1With the partial buffer circuit.If semiconductor switch module SM
1There is wiring inductance L respectively with cushioning in the circuit
1, L
2If IGBTQ
1Be conducting state, electric current I flows into wiring inductance L
1With IGBT Q
1The time make IGBT Q
1End, then electric current is shifted to by wiring inductance L
2, buffering diode DS
1, buffer condenser C
11The buffer circuit of forming, and at buffer condenser C
11On accumulate electric charge, thereby turn-off current.
Figure 13 illustrates the IGBT Q of a this moment
1Voltage V, IGBT Q
1Electric current I
1With buffering circuital current I
2Waveform.Among the figure with V
DPTherefore the voltage of expression is called crest voltage, below the fixed value, then can not damage IGBT if this voltage is not transferred to according to the area of safety operaton of thyristors such as IGBT.
This crest voltage V
DPDepend on wiring inductance L
1, L
2In be main L
2Current changing rate during with thyristor break-makes such as IGBT.Because high frequency thyristor break-make speed such as IGBT are fast, it is big that current changing rate becomes, in order to suppress crest voltage V
DP, reduce wiring inductance L
1, L
2Seem very important.
Shown in Fig. 1,2,10, present embodiment makes buffer condenser CS
1, CS
2With buffering diode DS
1, DS
4With half semiconductor switch module SM
1-SM
4Approaching and opposed, realize that the connecting wiring distance between these parts is the shortest, reduce wiring inductance L as far as possible
1, L
2Even if the result is the buffer condenser CS with low capacity
1, CS
2Also can force down crest voltage V
DP, help equipment miniaturization.
Present embodiment also will constitute buffer condenser CS
1, CS
2Three capacitors be made of one type, therefore can further reduce wiring inductance, can make capacitor miniaturization simultaneously.
Below describe with regard to the feature of the cooling system that semiconductor switch module is cooled off of present embodiment.
The PWM control device according to above-mentioned 3 kinds of conduction modes and the setting speed and the mode generator gate pulse of travelling of fixed electric car, and by gate pulse each semiconductor switch module is made PWM and control, thereby the output voltage of variable control inverter and frequency are simultaneously according to the mode of travelling of electric car (power up that the Lixing is sailed, inertia traveling, braking) control inverter.
Semiconductor switch module SM
1, SM
4Loss when working because of conducting is generated heat.Present embodiment dispels the heat to this with absorber plate 31,32 and cooler 53,54 cooling systems of being formed, and is decided below the allowable temperature to remain on.That is semiconductor switch module SM,
1-SM
4Heat earlier reach absorber plate 31,32 by base plate 21, the temperature of absorber plate 31,32 is risen.Then the water in the evaporation part 51a of heat pipe 51 utilizes this heat of evaporation absorber plate to be cooled off because of absorber plate 31,32 evaporation of vaporizing that heats up.Vaporize water in the heat pipe 51 is directed to condensation part 51b, carries out heat exchange and condensation by fin with the wind that travels (becoming the wind of vertical direction basically with Fig. 1 figure paper) of electric car.This condensed water is back to evaporation part 51a through the inwall of heat pipe 51, repeats above-mentioned cooling action.
It has been established that, forms the semiconductor switch module SM of 3 electrical level inverters
1-SM
4Loss (caloric value), semiconductor element shown in Figure 14 (a) and (b) heating cycle is such, and is relevant with the mode of travelling of electric car (power up that the Lixing is sailed, inertia traveling, braking).That is to say semiconductor switch module SM
1And SM
4Loss have peak value, semiconductor switch module SM when sail the Lixing powering up
2And SM
3Loss the time have peak value in braking.
In view of this, as shown in Figure 1, the SM that present embodiment staggers loss peak
1And SM
2Join for a pair of and be contained on the same absorber plate 31, equally with SM
3And SM
4Join for a pair of and be contained on the same absorber plate 32.Make when powering up the Lixing and sailing and be added to the heat homogenizing of absorber plate during braking with this, than to semiconductor switch module SM
1-SM
4The occasion of cooler is set respectively one by one, and the heat load amount of cooler 53,54 is more even, therefore can make the cooler miniaturization.
As shown in Figure 8, also load bypass diode on the base plate identical and form semiconductor switch module SM, the heating semiconductor element is concentrated with its cooling system, help the miniaturization of whole device with GIBT.
In this case, buffering diode DS also can form integratedly with semiconductor switch module SM, so just can further reduce above-mentioned wiring inductance, can make cooling system more intensive and promote equipment miniaturization simultaneously.
Equally, because clamping diode DC is installed on the absorber plate identical with semiconductor switch module SM 31,32
1And DC
2, can make heating semiconductor element and cooling system thereof further intensive, promote whole equipment miniaturization.Also has clamping diode DC
1, DC
2The mode of travelling of the corresponding electric car of loss, shown in Figure 14 (c), change like that, therefore the occasion of cooler is set, the homogenizing that the heat load amount of cooler is acquired a certain degree respectively than each diode.
On the other hand, as shown in Figure 8, the IGBT and the bypass diode DF that will constitute semiconductor switch module SM by insulation board 62 are contained on the base plate 61, be formed in inside modules and guarantee the insulation against ground of semiconductor element, thereby cooling system structure is oversimplified, promote whole equipment miniaturization, therefore the heat transfer member that absorber plate 31,32 and cooler 34,35 are connected as heat conduction can use the heat pipe that makes nonisulated property refrigerant such as water simultaneously.Thereby realize not decreasing the cooling system that cooling capacity need not have the freon of public hazards again.
Have again, following and making absorber plate is earthing potential, absorber plate 31,33 also can directly be contained on the framework 6, therefore, as shown in Figure 1 and Figure 2, present embodiment releasably is contained in absorber plate 31,32 on the peristome that is formed at framework 6 perpendicular outer wall places, and semiconductor switch module SM releasably is contained in the inboard, thus an outside of showing out of absorber plate 31,32 in framework 6.The result is, like that absorber plate all is located in the framework as compared with the past, and the surface of exposing absorber plate also plays a part radiating surface effectively, and its heat dissipation capacity can suppress the temperature rise in the framework, also can reduce the heat dissipation capacity of cooler, reaches miniaturization.
The foregoing description, enumerated application IGBT and made the example of the thyristor of converter main circuit, but be not limited thereto, also can use can be than the thyristor of GTO higher frequency driving, as controllable silicon, also can obtain effect same with controls such as bipolar transistor, MOS doors.
Also have, the foregoing description has been enumerated absorber plate has been divided into absorber plate 31,32, loads onto the example of cooler 53,54 more respectively, if but make absorber plate 31,32 be one, above-mentioned effect is also constant.But, if consider in advance cooler to be loaded onto assembling again behind the absorber plate, then still absorber plate is divided into two operations when being more convenient for assembling.
Also can be divided into semiconductor switch module side to absorber plate 31,32 and rejoin into double-decker with two parts such as cooler sides.Be more convenient for like this making and assembling.But, might reduce cooling effect because of the thermal resistance on double-deck absorber plate composition surface.
The foregoing description is made cooler after showing and allowing heat pipe and fin make up, but the invention is not restricted to this, can make heat sink conducts heat ground directly is bonded on the outside of absorber plate 31,32 or fin and absorber plate are formed one.
As mentioned above,, allow buffer condenser, buffering diode be equal to thyristor simultaneously and constitute steppedly opposed to each other, then check, maintainability such as repairing degenerates when allowing the thyristor of a phase be contained on the same absorber plate.About this point, because present embodiment is to divide power modelization by each phase converter main circuit, so can improve maintainabilities such as inspection, repairing.
That is to say, because of allow converter main circuit each divide the common framework of releasably packing into again behind the power model mutually, so thereby can take out necessary power model from framework during maintenance and check each part easily, improve maintainability.
Particularly pack into behind the gate driver GD, can carry out the work test of thyristor simply.That is to say, if carry out work test with gate driver with test, door characteristic that then must the conjunction with semiconductors switch element, capacitances etc. are prepared various test gate drivers in advance, so very loaded down with trivial details.To this, present embodiment is tested so can carry out work simply again definitely because of deciding gate driver GD with the institute that is fit to thyristor.
In addition, because of each separates modularization mutually,, also only need the power model of transposing fault just can repair rapidly even part breaks down.And, can be not unit, and be unit preparation acknowledgment copy with the power model with the inverter.Moreover, be that the power model divided of unit is low weight mutually with 1, can carry with simple tools.
Also have, crest voltage and overshoot voltage when above-mentioned thyristor circuit disconnects are influenced by wiring inductance also, and this inductance depends on the filtering capacitor CF that is connected in parallel on the converter main circuit DC power supply and the connecting wiring between the thyristor.As shown in Figure 1, the utility model disperses to pack into as filter cell by each by its filtering capacitor CF mutually, and places on the position of the clamping buffer condenser CS in the face of semiconductor switch module.Therefore, can further reduce crest voltage, make the buffer condenser capacity little.And the space availability ratio that can improve the setting of stereo structure structure is set like this, make whole equipment miniaturization.The result reaches miniaturization and can be contained in the confined space of electric car etc.
Also have, filtering capacitor CF can be contained on the power model supporting frame 33, constitute one with power model PU.
As mentioned above, the present invention has following effect.
Though use high-frequency semiconductor switch that crest voltage is uprised, but by buffer condenser and buffering diode are placed on the position of this semiconductor switch of clamping in the face of the bearing-surface that the connecting object thyristor is installed, can shorten the wiring between them as far as possible. The result is that wiring inductance reduces, and can reduce crest voltage, thereby can reduce the electric capacity of buffer condenser, promotes equipment miniaturization. And, be arranged to solid figure hierarchic structure by the member that will comprise thyristor and buffer condenser, impel whole equipment miniaturization.
Also have, the high-frequency semiconductor switch element is than the GTO controllable silicon, and it is little that door drives required power, and it is little that gate driver is done, and promotes the miniaturization of whole device.
Have again, after semiconductor switch module is divided mutually by per 1, be contained on the one side of same heat sink, and on the another side of this heat sink, connect with heat conduction cooler, so but the thermic load amount homogenising of cooler, the result can make cooler, and then makes whole equipment miniaturization.
In addition, if clamp diode and semiconductor switch module are contained on the same absorber plate, can make heating semiconductor element and cooling system thereof further intensive, thereby promote the miniaturization of whole device.
Also have, offer the structure of absorber plate and insulation by each thyristor branch, make absorber plate can be earthing potential, thereby need not to bother about the insulating properties of cooler refrigerant, available non-harmful water etc. are made refrigerant.
Owing to divide and power model with the converter main circuit of each phase, and this power model releasably packed in the common framework, when therefore keeping in repair, take out necessary merit from framework The rate module just can check each part easily, thereby improves maintainability.
Especially by the gate driver of packing into, can carry out easily the work test of thyristor.
Also because making modularization take 1 as unit, even when part breaks down, also only need the module of transposing fault, just can repair rapidly. And can be not take inverter as unit, and prepare acknowledgment copy take power model as unit.
Have again, if with filter condenser by in each each power model that disperses mutually to pack into, and place on the position of the clamping buffer condenser in the face of semiconductor switch module, the crest voltage in the time of then further reducing the disconnection of thyristor circuit, and can make the buffer condenser capacity little. Setting can also improve the space availability ratio that the stereo structure structure arranges like this, and the depth of device or width are all dwindled. The result reaches miniaturization and can be loaded in the confined space of electric car etc.
Fig. 1 is a major part structure chart of using one embodiment of the invention Electric inverter;
Fig. 2 sees the structure chart of Fig. 1 embodiment from arrow II-II direction;
Fig. 3 is the dynamical system structure chart of the inverter of electric car;
Fig. 4 is the main circuit structure figure of 1 phase of the present invention's 3 electrical level inverters;
Fig. 5 packs inverter shown in Figure 3 into and the overall appearance figure of the Electric inverter that constitutes;
Fig. 6 is being seen to view from Fig. 5 arrow VI-VI direction;
Fig. 7 represents the Electric inverter of Fig. 5 is fitted in the state of electric car underfloor;
Fig. 8 cuts the structure division of the semiconductor switch module of one embodiment of the invention open oblique view that the back is showed;
Fig. 9 is semiconductor switch module and the setting of clamping diode and the enlarged drawing of annexation on the expression absorber plate;
Figure 10 represents buffer condenser and cushions the be provided with overlapping relation of diode with respect to semiconductor switch module;
The IGBT Q of Figure 11 key diagram 4
1-Q
4The switching action and the relation of output voltage;
Figure 12 is the major part circuit diagram that is used to illustrate the crest voltage that produces when the thyristor circuit disconnects;
Figure 13 is each several part voltage, the current waveform figure that is used to illustrate the crest voltage that produces when the thyristor circuit disconnects;
Figure 14 is the curve chart that the drive manner of corresponding inverter is represented the loss of semiconductor switch module and clamping diode.
Relevant symbol implication below is described, 1A, B: inverter, 6: framework, 11-23: conductor, 31,32: absorber plate, 33: power model supporting frame, 35: flange part, 37: mount pad, 39: sealing gasket, 40: part supporting member, 41: arm board member, 42-45: terminal disc, 51: heat pipe, 52: fin, 53,54: cooler, 55: centre frame, 61: base plate, 62: insulation board, 63: main electrode, 64: thermal stress attenuating plate, 65:IBGT element, 67: insulation crust, 68: main electrode terminal, 69: door terminal, PU
1-PU
3: power model, SM
1-SM
4: semiconductor switch module, Q
1-Q
4: IGBT, DF
1-DF
4: bypass diode, CS
1-CS
2: buffer condenser, DS
1-DS
4: buffering diode, RS
1-RS
3: buffer resistance, DC
1-DC
2: clamping diode, CF
1-CF
2: filtering capacitor, CT: current transformer.
Claims (23)
1, a kind of inverter, comprise the converter main circuit that forms with a plurality of thyristors, the buffer circuit that connects above-mentioned each thyristor, and, it is characterized in that the buffer condenser that will form above-mentioned buffer circuit places on the position of the above-mentioned thyristor of clamping in the face of the bearing-surface that the connecting object thyristor is installed with making above-mentioned each thyristor than the element that GTO controllable silicon higher frequency drives.
2, inverter according to claim 1, it is characterized in that above-mentioned thyristor is contained on the thermal conductivity base plate, the main electrode terminal of each thyristor is located at the opposite of this thyristor base plate, be installed on the above-mentioned bearing-surface by this base plate again, and above-mentioned buffer condenser placed on the position of terminal near the above-mentioned main electrode terminal of connecting object thyristor of this buffer condenser.
3, inverter according to claim 1, but any one forms above-mentioned thyristor in the controllable silicon that it is characterized in that being controlled with bipolar transistor, igbt or the MOS door of high-frequency drive.
4, inverter according to claim 1, the buffering diode that it is characterized in that forming above-mentioned buffer circuit place on the position near the connecting object thyristor.
5, inverter according to claim 1 is characterized in that the bypass diode of above-mentioned thyristor on being connected in reverse parallel in this each thyristor is contained on the same base plate and forms incorporate semiconductor switch module.
6, inverter according to claim 5 is characterized in that the buffering diode that the constitutes above-mentioned buffer circuit above-mentioned semiconductor switch module of packing into is formed one.
7, a kind of inverter, comprise the converter main circuit that forms with a plurality of thyristors, the buffer circuit that connects above-mentioned each thyristor, and with making each thyristor than the element that GTO controllable silicon higher frequency drives, it is characterized in that above-mentioned thyristor is deposited in one side has terminal for cooling surface and this cooling surface opposite the module forms semiconductor switch module, this semiconductor switch module is installed is made the one side of the cooling surface overlap joint conductivity absorber plate of this semiconductor switch module, this absorber plate is contained on the supporting frame that above-mentioned inverter is installed, supporting member placed in the face of this absorber plate and on the position of the above-mentioned semiconductor switch module of clamping, in above-mentioned semiconductor switch module one side of this supporting member above-mentioned buffer circuit constitutive requirements buffer condenser is installed, the terminal of this buffer condenser and the terminal of above-mentioned semiconductor switch module are electrically connected.
8, inverter according to claim 7 is characterized in that near above-mentioned semiconductor switch module place above-mentioned buffer condenser being set.
9, inverter according to claim 7, any forms above-mentioned thyristor in the controllable silicon that it is characterized in that being controlled with bipolar transistor, igbt or the MOS door of energy high-frequency drive.
10, inverter according to claim 7 is characterized in that being provided with near connecting object semiconductor switch module place the constitutive requirements buffering diode of above-mentioned buffer circuit.
11, inverter according to claim 7 is characterized in that the bypass diode of above-mentioned thyristor on being connected in reverse parallel in above-mentioned thyristor is contained on the same base plate and one constitutes above-mentioned semiconductor switch module.
12, inverter according to claim 11 is characterized in that the buffering diode that the constitutes above-mentioned buffer circuit above-mentioned semiconductor switch module of packing into is formed one.
13, a kind of Electric inverter, the thyristor at least, buffer condenser, gate driver and the relevant wiring that it is characterized in that forming 3 phase converter main circuits are by per 1 division mutually, pack 1 supporting frame mutually into and form power model, the common framework of again power model of 3 phases releasably being packed into for per 1.
14, Electric inverter according to claim 13, the power model that it is characterized in that above-mentioned each phase comprise the series connection of 1 phase of converter main circuit a plurality of semiconductor switch modules, form this each semiconductor switch module with the buffer condenser of buffer circuit with the buffering diode, the heater that comprises above-mentioned semiconductor switch module is made the cooler of cooling and the binding post that carries out relevant wiring with the part outside this power model is formed member; Above-mentioned semiconductor switch module is contained in the one side of absorber plate, above-mentioned cooler is connected on heat conduction on the another side of this absorber plate, allow cooler be positioned at the outside of above-mentioned framework and allow above-mentioned supporting frame this framework of releasably packing into, above-mentioned buffer condenser is placed in the face of above-mentioned absorber plate and on the position of the above-mentioned semiconductor switch module of clamping.
15, Electric inverter according to claim 14, it is characterized in that the main electrode terminal of above-mentioned semiconductor switch module is located at the base plate opposite of this semiconductor switch module, above-mentioned buffer condenser is placed on the position of terminal near the above-mentioned main electrode terminal of connecting object semiconductor switch module of this buffer condenser.
16,, it is characterized in that and to be contained in the sequence arrangement of the above-mentioned semiconductor switch module of 1 phase on the above-mentioned absorber plate by series connection according to claim 14 or 15 described Electric inverters.
17, Electric inverter according to claim 14 is characterized in that above-mentioned power model comprises the buffer resistance device that forms above-mentioned buffer circuit, and this buffer resistance device is contained in cooler one side of above-mentioned supporting frame.
18, Electric inverter according to claim 14 is characterized in that above-mentioned power comprises the buffer resistance device that forms above-mentioned buffer circuit, and this buffer resistance device is contained in cooler one side of above-mentioned absorber plate.
19, Electric inverter according to claim 14 is characterized in that allowing the filtering capacitor of the above-mentioned converter main circuit of above-mentioned formation by the above-mentioned supporting frame supporting of above-mentioned power model.
20, a kind of Electric inverter, has the converter main circuit that comprises a plurality of thyristors and filtering capacitor and form, the buffer circuit that connects above-mentioned each thyristor, with making above-mentioned each thyristor than the element that GTO controllable silicon higher frequency drives, it is characterized in that the buffer condenser that will form above-mentioned each buffer circuit places on the position of the above-mentioned thyristor of clamping in the face of the bearing-surface that the connecting object thyristor is installed, above-mentioned filter is placed in the face of above-mentioned thyristor and on the position of the above-mentioned buffer condenser of clamping.
21, a kind of Electric inverter, a supporting frame pack again separately into after it is characterized in that the member of 3 phase inverters divided mutually by per 1 and form power model, in the lower edge, floor of electric car vehicle vehicle lengthwise direction framework is installed, and in the above-mentioned power model of 3 phases being packed side by side into this framework along the length direction of this framework; The member of the power model of above-mentioned each phase comprises a plurality of semiconductor switch modules of the series connection of 1 phase of converter main circuit, form buffer condenser and the buffering diode of above-mentioned each semiconductor switch module with buffer circuit, detect the current transformer of output current, above-mentioned semiconductor switch module is done conducting, by the gate driver that drives, the cooler that the heater element that comprises above-mentioned semiconductor switch module is cooled off, and the binding post that carries out relevant wiring with the part outside the member that constitutes this power model; Above-mentioned each semiconductor switch module is contained in thyristor on the thermal conductivity base plate separately by insulating component, and the main electrode terminal placed the base plate opposite and constitutes; Above-mentioned buffering diode is contained in diode element on the thermal conductivity base plate by insulating component and constitutes; Above-mentioned each semiconductor switch module and above-mentioned buffering diode are contained in the one side of conductivity absorber plate separately by above-mentioned base plate; When being contained in this absorber plate on the above-mentioned supporting frame, above-mentioned cooler is connected on heat conduction the another side of this absorber plate; Supporting member is located on the position in the face of above-mentioned absorber plate and the above-mentioned semiconductor switch module of clamping; Above-mentioned buffer condenser is contained in above-mentioned thyristor one side of this supporting member; Above-mentioned filtering capacitor is placed on the position in the face of above-mentioned semiconductor switch module and the above-mentioned buffer condenser of clamping, and place on the position of terminal near the above-mentioned main electrode terminal of connecting object semiconductor switch module of this buffer condenser; Above this filtering capacitor, above-mentioned current transformer and above-mentioned gate driver are contained on the above-mentioned supporting frame; Above-mentioned power model is contained on the peristome of the nearly vehicle of above-mentioned framework one side formation, and above-mentioned cooler releasably is installed, be located at the outside by above-mentioned supporting frame.
22, Electric inverter according to claim 21, the power model group who it is characterized in that having 2 groups of above-mentioned 3 phases, and be the center with this each power model group's control module is arranged side by side this 2 groups of power model groups along the length direction of above-mentioned framework.
23, Electric inverter according to claim 21 is characterized in that allowing above-mentioned supporting frame support above-mentioned filtering capacitor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4315231A JP2896454B2 (en) | 1992-11-25 | 1992-11-25 | Inverter device |
| JP315231/92 | 1992-11-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1091867A true CN1091867A (en) | 1994-09-07 |
| CN1042181C CN1042181C (en) | 1999-02-17 |
Family
ID=18062971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN93120369A Expired - Lifetime CN1042181C (en) | 1992-11-25 | 1993-11-25 | Inverter apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2896454B2 (en) |
| KR (1) | KR940012775A (en) |
| CN (1) | CN1042181C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1051656C (en) * | 1995-01-31 | 2000-04-19 | 株式会社东芝 | Assembly structure of self-turn-off switching device and snubber circuit therefor |
| CN104604114A (en) * | 2012-08-29 | 2015-05-06 | 株式会社安川电机 | Power conversion apparatus |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3900220B2 (en) * | 1997-10-28 | 2007-04-04 | 株式会社安川電機 | Inverter device having three-level neutral clamp type inverter circuit |
| JP4631179B2 (en) * | 2001-02-09 | 2011-02-16 | 富士電機システムズ株式会社 | Semiconductor device and inverter device using the same |
| JP5681092B2 (en) * | 2005-07-08 | 2015-03-04 | 富士電機株式会社 | Power module cooling device |
| JP4905636B2 (en) * | 2005-10-03 | 2012-03-28 | 株式会社東芝 | Power converter for vehicle |
| US8111530B2 (en) | 2006-12-20 | 2012-02-07 | Mitsubishi Electric Corporation | 3-level power converter |
| JP2010110129A (en) * | 2008-10-30 | 2010-05-13 | Toshiba Corp | Power converter for vehicle |
| JP5467933B2 (en) * | 2010-05-21 | 2014-04-09 | 株式会社東芝 | Semiconductor device |
| JP5024439B2 (en) * | 2010-09-24 | 2012-09-12 | 富士電機株式会社 | Semiconductor device |
| CN102480244A (en) * | 2010-11-24 | 2012-05-30 | 中兴通讯股份有限公司 | High-power inverter system |
| CN102158053B (en) * | 2011-03-15 | 2016-01-20 | 中国电力科学研究院 | A kind of expansion structure of current changer module unit |
| JP5437313B2 (en) | 2011-05-31 | 2014-03-12 | 日産自動車株式会社 | Power converter |
| JP5377575B2 (en) | 2011-05-31 | 2013-12-25 | 日産自動車株式会社 | Power converter |
| JP5377573B2 (en) * | 2011-05-31 | 2013-12-25 | 日産自動車株式会社 | Power converter |
| JP5377574B2 (en) * | 2011-05-31 | 2013-12-25 | 日産自動車株式会社 | Power converter |
| JP5437312B2 (en) | 2011-05-31 | 2014-03-12 | 日産自動車株式会社 | Power converter |
| JP5437314B2 (en) | 2011-05-31 | 2014-03-12 | 日産自動車株式会社 | Power converter |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0719166Y2 (en) * | 1988-07-27 | 1995-05-01 | 株式会社明電舎 | Element mounting structure for power converter |
| JPH0756629Y2 (en) * | 1988-08-04 | 1995-12-25 | 富士電機株式会社 | Snubber circuit of semiconductor switch element |
| JPH0732229B2 (en) * | 1988-12-06 | 1995-04-10 | 三菱電機株式会社 | Semiconductor device |
| GB2242580B (en) * | 1990-03-30 | 1994-06-15 | Mitsubishi Electric Corp | Inverter unit with improved bus-plate configuration |
-
1992
- 1992-11-25 JP JP4315231A patent/JP2896454B2/en not_active Expired - Lifetime
-
1993
- 1993-11-23 KR KR1019930024988A patent/KR940012775A/en not_active Application Discontinuation
- 1993-11-25 CN CN93120369A patent/CN1042181C/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1051656C (en) * | 1995-01-31 | 2000-04-19 | 株式会社东芝 | Assembly structure of self-turn-off switching device and snubber circuit therefor |
| CN104604114A (en) * | 2012-08-29 | 2015-05-06 | 株式会社安川电机 | Power conversion apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR940012775A (en) | 1994-06-24 |
| JP2896454B2 (en) | 1999-05-31 |
| CN1042181C (en) | 1999-02-17 |
| JPH06165524A (en) | 1994-06-10 |
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