CN109174995B - A kind of copper-nanometer silicon carbide-aluminium sandwich structure composite material and preparation method - Google Patents
A kind of copper-nanometer silicon carbide-aluminium sandwich structure composite material and preparation method Download PDFInfo
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- CN109174995B CN109174995B CN201810915048.3A CN201810915048A CN109174995B CN 109174995 B CN109174995 B CN 109174995B CN 201810915048 A CN201810915048 A CN 201810915048A CN 109174995 B CN109174995 B CN 109174995B
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Abstract
The present invention relates to a kind of copper-nanometer silicon carbide-aluminium sandwich structure composite material and preparation methods.The step of its technical solution, is successively: the pretreatment of Neon SiC powder；The surface texturing of copper material and aluminium to be processed is handled；Copper-nanometer silicon carbide-aluminium sandwich structure assembling；Copper-nanometer silicon carbide-aluminium sandwich structure Material cladding rolling；Copper-nanometer silicon carbide-aluminium sandwich structure rolling stock stabilization processes；Copper-nanometer silicon carbide-aluminium sandwich structure composite material is made.The present invention has the characteristics that simple process, with short production cycle low with preparation cost, made product strength is big, thermal expansion coefficient is low, thermal conductivity is high, fine corrosion resistance, surface mechanical engagement it is horizontal it is high, plastic deformation ability is strong and bond strength is good.
Description
Technical field
The present invention relates to a kind of technical fields of cermet metal sandwich structure composite material.More particularly to it is a kind of
Copper-nanometer silicon carbide-aluminium sandwich structure composite material and preparation method.
Background technique
Composite material application and preparation method thereof is the inevitable requirement of social economy's rapid development and scientific and technological progress, current energy
The performance of homogenous material has been unable to meet industry in source domain, electronic communication field, mechanical manufacturing field and special construction field
Needs.And integrate the composite materials of a variety of homogenous material excellent performances due to there is more excellent comprehensive performance by
Pay attention to, wherein low cost and high performance metal-base composites and its technology of preparing are paid close attention to as those skilled in the art
With the object of research.
" cold rolling copper aluminum composite material production technology " (201310325006.1) patented technology, al cu bimetal obtained are multiple
Alternative pure copper material is used as the conductive devices in electric system to condensation material under normal conditions, but in high thermal conductivity and powerful
Requirement is not able to satisfy in delicate electronic device then；" a kind of preparation method of Cu-MoCu-Cu composite board "
(201110248203.9) patented technology, Cu-MoCu-Cu composite material obtained can be used as high thermal conductivity device and high-power electricity
Extremely equal conductive and heat-conductives require the precise electronic component of high, heat-resisting good heat dissipation effect, but the preparation of MoCu alloy is difficult, material use
Rate is low, technique is cumbersome and with high costs.
Summary of the invention
The present invention is directed to overcome prior art defect, and it is an object of the present invention to provide a kind of simple process, with short production cycle and preparation
Copper-nanometer silicon carbide at low cost-aluminium sandwich structure composite material preparation method, copper-nanometer prepared by this method
Silicon carbide-aluminium sandwich structure composite material strength is big, thermal expansion coefficient is low, thermal conductivity is high, fine corrosion resistance, surface machine
Tool engagement level is high, plastic deformation ability is strong and bond strength is good.
To achieve the above object, the technical solution adopted by the present invention comprises the concrete steps that:
The pretreatment of the first step, Neon SiC powder
First by silicon carbide powder that partial size is 20~80nm in crucible furnace in 800~1100 DEG C under the conditions of heat treatment 1~
3h, primary every 0.5h stirring during heat treatment, furnace cooling obtains the Neon SiC powder being oxidized to surface.
The Neon SiC powder that the surface is oxidized is placed in the hydrofluoric acid solution that concentration is 3~6wt%, ultrasound
Wave vibrates 0.5~2h, then is adjusted to pH=7 with sodium hydroxide solution, stands 8~12h；Then by the solution washing 3 after standing
It~5 times, filters, it is dry, obtain pretreated Neon SiC powder.
Step 2: the surface texturing of copper material to be processed and aluminium is handled
Copper material to be processed is annealed 0.5~1.5h under the conditions of 280~500 DEG C, the copper material to be processed after being annealed；It will
Copper material to be processed after annealing and aluminium to be processed while carry out surface texturing processing, table with motor wire brush respectively
Roughness after the frosting treatment of face is Ra50~100 μm, and the direction and direction to be rolled of the surface texturing processing are mutually hung down
Directly.
The copper material to be processed with a thickness of 0.5~1.5mm；The aluminium to be processed: the thickness of the copper material to be processed
Than for (2.5~4): 1, the width that the width of the aluminium to be processed subtracts the copper material to be processed is 1~3mm.
Step 3: copper-nanometer silicon carbide-aluminium sandwich structure assembling
By the pretreated Neon SiC powder in storage powder tank, the storage powder tank is connected with high pressure nozzle.
By surface texturing, treated that copper material is fixed in the case that dusts again, air pressure is 0.8~1.2MPa, flow is 0.1~0.3L/
Under conditions of min and the amount of dusting are 0.5~1.2g/min, dusted into the case that dusts with high pressure nozzle to copper material texturing surface
Thickness be 0.2~1.5 μm, stand 0.15~0.5h, consolidate copper-nm-class silicon carbide material of-powder double-layer structure.Then will
Copper-nm-class silicon carbide material powder drop face of surface texturing treated aluminium frosted face and the solid-powder double-layer structure
It is relatively stacked, consolidate Gu-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material.
Step 4: copper-nanometer silicon carbide-aluminium sandwich structure Material cladding rolling
Gu solid-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material is put into guide system, in room temperature
Under the conditions of carry out composite rolling, the speed of composite rolling is 2.5~12m/min, and the rolling of the first passage of composite rolling is depressed
Rate is 70~80%.Then 2~4.5h is kept the temperature under the conditions of argon atmosphere and 400~520 DEG C, carries out the second passes, the
The rolling reduction ratio of two passages is 20~30%.Then at third passes are carried out under room temperature, third passes are depressed
Rate is 50~80%, obtains copper-nanometer silicon carbide-aluminium sandwich structure rolling stock.
Step 5: copper-nanometer silicon carbide-aluminium sandwich structure rolling stock stabilization processes
To the copper-nanometer silicon carbide-aluminium sandwich structure rolling stock in argon atmosphere, in 375~450 DEG C of conditions
Copper-nanometer silicon carbide-aluminium sandwich structure composite material is made in 12~18h of lower heat preservation.
The washing is cleaned using distilled water or using deionized water.
The filtering is filtered using 3~5 layers of filter paper.
The copper material to be processed is plate or is band；The Cu content of the copper material to be processed is 85~99.9wt%.
The aluminium to be processed is plate or is band；The Al content of the aluminium to be processed is greater than 99wt%.
By adopting the above technical scheme, the present invention has following good effect compared with prior art:
The present invention uses Neon SiC powder for middle layer, avoid sandwich structure material intermediate alloy preparation and
Material loss, preparation method are simple；The present invention does not need special equipment, it is easy to accomplish industrialized production can be reduced equipment investment
And the cost of manual maintenance, preparation cost are low.
The method that the present invention uses nanometer silicon carbide to be deposited on copper material surface avoids material surface pollution to be composite and oxygen
Change, the Neon SiC powder of middle layer plays pinning effect to compound interface, and the rolling mill practice of single pass heavy reduction improves
Surface mechanical engagement is horizontal, further promotes compound interface diffusion layer to increase, to improve the bond strength of compound interface.
The present invention uses the rolling mill practice of multi-pass heavy reduction, and it is multiple to improve copper-nanometer silicon carbide-aluminium sandwich structure
The plastic deformation ability of condensation material；The present invention has uniformly efficiently controlled compound interface layer using the self-organizing sedimentation method that dusts
Nanometer silicon carbide thickness and distribution, promote compound interface layer nanometer silicon carbide and its and intermetallic compound combination stablize
Property, thus make the method for the present invention prepare copper-nanometer silicon carbide-aluminium sandwich structure composite material have both copper, nanometer silicon carbide,
The excellent performance of aluminium, having product, intensity is big, thermal expansion coefficient is low, thermal conductivity is high, fine corrosion resistance, surface machinery are nibbled
The flat high and strong comprehensive performance of plastic deformation ability of Heshui.
The Neon SiC powder that the present invention uses has chemical stability, good thermal conductivity and the low linear expansion of high temperature
Coefficient, overcome existing aluminum copper clad material in the application long-range high temperature failure the defects of, by bonding interface layer control receive
Rice silicon carbide powder is uniformly distributed, to inhibit copper-nanometer silicon carbide-aluminium sandwich structure composite material high temperature linear expansivity
With promotion copper-nanometer silicon carbide-aluminium sandwich structure composite material high-temperature heat-conductive, composite layer is greatly reduced due to high temperature
The probability for failing and cracking, greatly improves the bond strength of sandwich structure composite material interface.
Therefore, the present invention has the characteristics that simple process, copper-nanometer with short production cycle low with preparation cost, prepared
Silicon carbide-aluminium sandwich structure composite material strength is big, thermal expansion coefficient is low, thermal conductivity is high, fine corrosion resistance, surface machine
Tool engagement level is high, plastic deformation ability is strong and bond strength is good.
Specific embodiment
The invention will be further described With reference to embodiment, not to the limitation of its protection scope.
In present embodiment:
The washing is cleaned using distilled water or using deionized water.
The filtering is filtered using 3~5 layers of filter paper.
It is repeated no more in embodiment.
Embodiment 1
A kind of copper-nanometer silicon carbide-aluminium sandwich structure composite material and preparation method.Preparation side described in the present embodiment
Method comprises the concrete steps that:
The pretreatment of the first step, Neon SiC powder
First by silicon carbide powder that partial size is 20~80nm in crucible furnace in 800~890 DEG C under the conditions of heat treatment 1~
1.5h, primary every 0.5h stirring during heat treatment, furnace cooling obtains the Neon SiC powder being oxidized to surface.
The Neon SiC powder that the surface is oxidized is placed in the hydrofluoric acid solution that concentration is 3~6wt%, ultrasound
Wave vibrates 0.5~2h, then is adjusted to pH=7 with sodium hydroxide solution, stands 8~12h；Then by the solution washing 3 after standing
It~5 times, filters, it is dry, obtain pretreated Neon SiC powder.
Step 2: the surface texturing of copper material to be processed and aluminium is handled
Copper material to be processed is annealed 0.5~1.5h under the conditions of 280~350 DEG C, the copper material to be processed after being annealed；It will
Copper material to be processed after annealing and aluminium to be processed while carry out surface texturing processing, table with motor wire brush respectively
Roughness after the frosting treatment of face is Ra50~70 μm, and the direction and direction to be rolled of the surface texturing processing are mutually hung down
Directly.
The copper material to be processed with a thickness of 0.5~0.8mm；The aluminium to be processed: the thickness of the copper material to be processed
Than for (2.5~2.8): 1, the width that the width of the aluminium to be processed subtracts the copper material to be processed is 1~3mm.
Step 3: copper-nanometer silicon carbide-aluminium sandwich structure assembling
By the pretreated Neon SiC powder in storage powder tank, the storage powder tank is connected with high pressure nozzle.
By surface texturing, treated that copper material is fixed in the case that dusts again, air pressure is 0.8~0.9MPa, flow is 0.2~0.3L/
Under conditions of min and the amount of dusting are 0.9~1.2g/min, dusted into the case that dusts with high pressure nozzle to copper material texturing surface
Thickness be 1.0~1.5 μm, stand 0.15~0.5h, consolidate copper-nm-class silicon carbide material of-powder double-layer structure.Then will
Copper-nm-class silicon carbide material powder drop face of surface texturing treated aluminium frosted face and the solid-powder double-layer structure
It is relatively stacked, consolidate Gu-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material.
Step 4: copper-nanometer silicon carbide-aluminium sandwich structure Material cladding rolling
Gu solid-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material is put into guide system, in room temperature
Under the conditions of carry out composite rolling, the speed of composite rolling is 2.5~6m/min, the rolling reduction ratio of the first passage of composite rolling
It is 70~80%.Then 2~3h is kept the temperature under the conditions of argon atmosphere and 400~450 DEG C, carries out the second passes, second
Secondary rolling reduction ratio is 20~25%.It is then at progress third passes, third passes reduction ratio under room temperature
50~60%, obtain copper-nanometer silicon carbide-aluminium sandwich structure rolling stock.
Step 5: copper-nanometer silicon carbide-aluminium sandwich structure rolling stock stabilization processes
To the copper-nanometer silicon carbide-aluminium sandwich structure rolling stock in argon atmosphere, in 375~410 DEG C of conditions
Copper-nanometer silicon carbide-aluminium sandwich structure composite material is made in 12~14h of lower heat preservation.
The copper material to be processed is band；The Cu content of the copper material to be processed is 99~99.9wt%.
The aluminium to be processed is band；The Al content of the aluminium to be processed is greater than 99wt%.
Embodiment 2
A kind of copper-nanometer silicon carbide-aluminium sandwich structure composite material and preparation method.Preparation side described in the present embodiment
Method comprises the concrete steps that:
The pretreatment of the first step, Neon SiC powder
First by silicon carbide powder that partial size is 20~80nm in crucible furnace in 870~960 DEG C under the conditions of heat treatment 1.2~
2h, primary every 0.5h stirring during heat treatment, furnace cooling obtains the Neon SiC powder being oxidized to surface.
The Neon SiC powder that the surface is oxidized is placed in the hydrofluoric acid solution that concentration is 3~6wt%, ultrasound
Wave vibrates 0.5~2h, then is adjusted to pH=7 with sodium hydroxide solution, stands 8~12h；Then by the solution washing 3 after standing
It~5 times, filters, it is dry, obtain pretreated Neon SiC powder.
Step 2: the surface texturing of copper material to be processed and aluminium is handled
Copper material to be processed is annealed 0.5~1.5h under the conditions of 330~400 DEG C, the copper material to be processed after being annealed；It will
Copper material to be processed after annealing and aluminium to be processed while carry out surface texturing processing, hair with motor wire brush respectively
Coming to the surface treated, roughness is Ra60~80 μm, and the direction and direction to be rolled of the surface texturing processing are mutually hung down
Directly.
The copper material to be processed with a thickness of 0.7~1.0mm；The aluminium to be processed: the thickness of the copper material to be processed
Than for (2.5~3): 1, the width that the width of the aluminium to be processed subtracts the copper material to be processed is 1~3mm.
Step 3: copper-nanometer silicon carbide-aluminium sandwich structure assembling
By the pretreated Neon SiC powder in storage powder tank, the storage powder tank is connected with high pressure nozzle.
By surface texturing, treated that copper material is fixed in the case that dusts again, air pressure is 0.9~1.0MPa, flow is 0.2~0.3L/
Under conditions of min and the amount of dusting are 0.7~1.0g/min, dusted into the case that dusts with high pressure nozzle to copper material texturing surface
Thickness be 0.7~1.2 μm, stand 0.15~0.5h, consolidate copper-nm-class silicon carbide material of-powder double-layer structure.Then will
Copper-nm-class silicon carbide material powder drop face of surface texturing treated aluminium frosted face and the solid-powder double-layer structure
It is relatively stacked, consolidate Gu-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material.
Step 4: copper-nanometer silicon carbide-aluminium sandwich structure Material cladding rolling
Gu solid-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material is put into guide system, in room temperature
Under the conditions of carry out composite rolling, the speed of composite rolling is 5~8m/min, and the rolling reduction ratio of the first passage of composite rolling is
70~80%.Then 3~3.5h is kept the temperature under the conditions of argon atmosphere and 450~500 DEG C, carries out the second passes, second
Secondary rolling reduction ratio is 25~30%.It is then at progress third passes, third passes reduction ratio under room temperature
60~70%, obtain copper-nanometer silicon carbide-aluminium sandwich structure rolling stock.
Step 5: copper-nanometer silicon carbide-aluminium sandwich structure rolling stock stabilization processes
To the copper-nanometer silicon carbide-aluminium sandwich structure rolling stock in argon atmosphere, in 390~420 DEG C of conditions
Copper-nanometer silicon carbide-aluminium sandwich structure composite material is made in 13~16h of lower heat preservation.
The copper material to be processed is band；The Cu content of the copper material to be processed is 90~95wt%.
The aluminium to be processed is plate；The Al content of the aluminium to be processed is greater than 99wt%.
Embodiment 3
A kind of copper-nanometer silicon carbide-aluminium sandwich structure composite material and preparation method.Preparation side described in the present embodiment
Method comprises the concrete steps that:
The pretreatment of the first step, Neon SiC powder
The silicon carbide powder that partial size is 20~80nm is first heat-treated 1.8 in 940~1030 DEG C under the conditions of in crucible furnace
~2.5h, primary every 0.5h stirring during heat treatment, furnace cooling obtains the Neon SiC powder being oxidized to surface.
The Neon SiC powder that the surface is oxidized is placed in the hydrofluoric acid solution that concentration is 3~6wt%, ultrasound
Wave vibrates 0.5~2h, then is adjusted to pH=7 with sodium hydroxide solution, stands 8~12h；Then by the solution washing 3 after standing
It~5 times, filters, it is dry, obtain pretreated Neon SiC powder.
Step 2: the surface texturing of copper material to be processed and aluminium is handled
Copper material to be processed is annealed 0.5~1.5h under the conditions of 380~450 DEG C, the copper material to be processed after being annealed；It will
Copper material to be processed after annealing and aluminium to be processed while carry out surface texturing processing, table with motor wire brush respectively
Roughness after the frosting treatment of face is Ra70~90 μm, and the direction and direction to be rolled of the surface texturing processing are mutually hung down
Directly.
The copper material to be processed with a thickness of 0.9~1.3mm；The aluminium to be processed: the thickness of the copper material to be processed
Than for (3~4): 1, the width that the width of the aluminium to be processed subtracts the copper material to be processed is 1~3mm.
Step 3: copper-nanometer silicon carbide-aluminium sandwich structure assembling
By the pretreated Neon SiC powder in storage powder tank, the storage powder tank is connected with high pressure nozzle.
By surface texturing, treated that copper material is fixed in the case that dusts again, air pressure is 1.0~1.1MPa, flow is 0.1~0.2L/
Under conditions of min and the amount of dusting are 0.6~0.85g/min, dusted into the case that dusts with high pressure nozzle to copper material texturing table
The thickness in face is 0.5~0.9 μm, stands 0.15~0.5h, consolidate copper-nm-class silicon carbide material of-powder double-layer structure.Then
By copper-nm-class silicon carbide material powder drop of surface texturing treated aluminium frosted face and the solid-powder double-layer structure
Face is relatively stacked, consolidate Gu-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material.
Step 4: copper-nanometer silicon carbide-aluminium sandwich structure Material cladding rolling
Gu solid-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material is put into guide system, in room temperature
Under the conditions of carry out composite rolling, the speed of composite rolling is 7~10m/min, the rolling reduction ratio of the first passage of composite rolling
It is 70~80%.Then 3.2~4.0h is kept the temperature under the conditions of argon atmosphere and 420~480 DEG C, carries out the second passes, the
The rolling reduction ratio of two passages is 25~28%.Then at third passes are carried out under room temperature, third passes are depressed
Rate is 65~75%, obtains copper-nanometer silicon carbide-aluminium sandwich structure rolling stock.
Step 5: copper-nanometer silicon carbide-aluminium sandwich structure rolling stock stabilization processes
To the copper-nanometer silicon carbide-aluminium sandwich structure rolling stock in argon atmosphere, in 400~430 DEG C of conditions
Copper-nanometer silicon carbide-aluminium sandwich structure composite material is made in 15~17h of lower heat preservation.
The copper material to be processed is band；The Cu content of the copper material to be processed is 95~99wt%.
The aluminium to be processed is plate；The Al content of the aluminium to be processed is greater than 99wt%.
Embodiment 4
A kind of copper-nanometer silicon carbide-aluminium sandwich structure composite material and preparation method.Preparation side described in the present embodiment
Method comprises the concrete steps that:
The pretreatment of the first step, Neon SiC powder
First by silicon carbide powder that partial size is 20~80nm in crucible furnace in 1010~1100 DEG C under the conditions of heat treatment 2~
3h, primary every 0.5h stirring during heat treatment, furnace cooling obtains the Neon SiC powder being oxidized to surface.
The Neon SiC powder that the surface is oxidized is placed in the hydrofluoric acid solution that concentration is 3~6wt%, ultrasound
Wave vibrates 0.5~2h, then is adjusted to pH=7 with sodium hydroxide solution, stands 8~12h；Then by the solution washing 3 after standing
It~5 times, filters, it is dry, obtain pretreated Neon SiC powder.
Step 2: the surface texturing of copper material to be processed and aluminium is handled
Copper material to be processed is annealed 0.5~1.5h under the conditions of 430~500 DEG C, the copper material to be processed after being annealed；It will
Copper material to be processed after annealing and aluminium to be processed while carry out surface texturing processing, table with motor wire brush respectively
Roughness after the frosting treatment of face is Ra80~100 μm, and the direction of surface texturing processing is mutually perpendicular to direction to be rolled.
The copper material to be processed with a thickness of 1.2~1.5mm；The aluminium to be processed: the thickness of the copper material to be processed
Than for (3.5~4): 1, the width that the width of the aluminium to be processed subtracts the copper material to be processed is 1~3mm.
Step 3: copper-nanometer silicon carbide-aluminium sandwich structure assembling
By the pretreated Neon SiC powder in storage powder tank, the storage powder tank is connected with high pressure nozzle.
By surface texturing, treated that copper material is fixed in the case that dusts again, air pressure is 1.1~1.2MPa, flow is 0.1~0.2L/
Under conditions of min and the amount of dusting are 0.5~075g/min, dusted into the case that dusts with high pressure nozzle to copper material texturing surface
Thickness be 0.2~0.6 μm, stand 0.15~0.5h, consolidate copper-nm-class silicon carbide material of-powder double-layer structure.Then will
Copper-nm-class silicon carbide material powder drop face of surface texturing treated aluminium frosted face and the solid-powder double-layer structure
It is relatively stacked, consolidate Gu-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material.
Step 4: copper-nanometer silicon carbide-aluminium sandwich structure Material cladding rolling
Gu solid-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material is put into guide system, in room temperature
Under the conditions of carry out composite rolling, the speed of composite rolling is 9~12m/min, the rolling reduction ratio of the first passage of composite rolling
It is 70~80%.Then 3.5~4.5h is kept the temperature under the conditions of argon atmosphere and 475~520 DEG C, carries out the second passes, the
The rolling reduction ratio of two passages is 28~30%.Then at third passes are carried out under room temperature, third passes are depressed
Rate is 75~80%, obtains copper-nanometer silicon carbide-aluminium sandwich structure rolling stock.
Step 5: copper-nanometer silicon carbide-aluminium sandwich structure rolling stock stabilization processes
To the copper-nanometer silicon carbide-aluminium sandwich structure rolling stock in argon atmosphere, in 425~450 DEG C of conditions
Copper-nanometer silicon carbide-aluminium sandwich structure composite material is made in 16~18h of lower heat preservation.
The copper material to be processed is plate；The Cu content of the copper material to be processed is 85~90wt%.
The aluminium to be processed is plate；The Al content of the aluminium to be processed is greater than 99wt%.
Present embodiment has following good effect compared with prior art:
Present embodiment uses Neon SiC powder for middle layer, avoids sandwich structure material intermediate alloy
Preparation and material loss, preparation method is simple；Present embodiment does not need special equipment, it is easy to accomplish industrial metaplasia
It produces, can be reduced equipment investment and the cost of manual maintenance, preparation cost is low.
The method that present embodiment uses nanometer silicon carbide to be deposited on copper material surface, avoids material surface to be composite
Pollution and oxidation, the Neon SiC powder of middle layer play pinning effect, the rolling of single pass heavy reduction to compound interface
Technique improves surface mechanical engagement level, further promotes compound interface diffusion layer to increase, to improve compound interface
Bond strength.
Present embodiment uses the rolling mill practice of multi-pass heavy reduction, improves copper-nanometer silicon carbide-aluminium Sanming City
Control the plastic deformation ability of structural composite material；Present embodiment is using the self-organizing sedimentation method that dusts, uniformly effectively
The nanometer silicon carbide thickness and distribution for controlling compound interface layer, promote compound interface layer nanometer silicon carbide and its between metal
The combination stability of compound the, so that copper-nanometer silicon carbide-aluminium sandwich structure for preparing present embodiment method is multiple
Condensation material has both the excellent performance of copper, nanometer silicon carbide, aluminium, make product have intensity is big, thermal expansion coefficient is low, thermal conductivity is high,
The horizontal high and strong plastic deformation ability comprehensive performance of fine corrosion resistance, surface mechanical engagement.
The Neon SiC powder that present embodiment uses has chemical stability, good thermal conductivity and high temperature low
Linear expansion coefficient, overcome existing aluminum copper clad material in the application long-range high temperature failure the defects of, by interface cohesion
Layer control Neon SiC powder is uniformly distributed, to inhibit copper-nanometer silicon carbide-aluminium sandwich structure composite material high temperature
Linear expansivity and promotion copper-nanometer silicon carbide-aluminium sandwich structure composite material high-temperature heat-conductive, greatly reduce composite layer
The probability to be cracked due to high temperature failure greatly improves the bond strength of sandwich structure composite material interface.
Therefore, present embodiment has the characteristics that simple process, with short production cycle low with preparation cost, prepared
Copper-nanometer silicon carbide-aluminium sandwich structure composite material strength is big, thermal expansion coefficient is low, thermal conductivity is high, excellent corrosion
Good, surface mechanical engagement it is horizontal it is high, plastic deformation ability is strong and bond strength is good.
Claims (6)
1. a kind of copper-nanometer silicon carbide-aluminium sandwich structure composite material preparation method, it is characterised in that the preparation method
Comprise the concrete steps that:
The pretreatment of the first step, Neon SiC powder
The silicon carbide powder that partial size is 20~80nm is first heat-treated 1~3h, heat in 800~1100 DEG C under the conditions of in crucible furnace
Primary every 0.5h stirring during processing, furnace cooling obtains the Neon SiC powder being oxidized to surface；
The Neon SiC powder that the surface is oxidized is placed in the hydrofluoric acid solution that concentration is 3~6wt%, ultrasonic wave vibration
Dynamic 0.5~2h, then it is adjusted to pH=7 with sodium hydroxide solution, stand 8~12h；Then by the solution washing 3~5 after standing
It is secondary, it filters, it is dry, obtain pretreated Neon SiC powder；
Step 2: the surface texturing of copper material to be processed and aluminium is handled
Copper material to be processed is annealed 0.5~1.5h under the conditions of 280~500 DEG C, the copper material to be processed after being annealed；It will annealing
Copper material to be processed afterwards and aluminium to be processed while carry out surface texturing processing with motor wire brush respectively, surface hair
Change that treated that roughness is Ra50~100 μm, the direction of the surface texturing processing is mutually perpendicular to direction to be rolled；
The copper material to be processed with a thickness of 0.5~1.5mm；The aluminium to be processed: the thickness ratio of the copper material to be processed is
(2.5~4): 1, the width that the width of the aluminium to be processed subtracts the copper material to be processed is 1~3mm；
Step 3: copper-nanometer silicon carbide-aluminium sandwich structure assembling
By the pretreated Neon SiC powder in storage powder tank, the storage powder tank is connected with high pressure nozzle；Again will
Treated that copper material is fixed in the case that dusts for surface texturing, air pressure be 0.8~1.2MPa, flow be 0.1~0.3L/min and
Under conditions of the amount of dusting is 0.5~1.2g/min, dusted into the case that dusts to the layer on copper material texturing surface with high pressure nozzle
Thickness is 0.2~1.5 μm, stands 0.15~0.5h, consolidate copper-nm-class silicon carbide material of-powder double-layer structure；Then by surface
Aluminium frosted face after frosting treatment is opposite with solid-copper-nm-class silicon carbide material powder drop face of powder double-layer structure
It is stacked, consolidate Gu-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material；
Step 4: copper-nanometer silicon carbide-aluminium sandwich structure Material cladding rolling
Gu solid-powder-sandwich structure copper-nanometer silicon carbide-aluminium assembled material is put into guide system, in room temperature condition
The speed of lower carry out composite rolling, composite rolling is 2.5~12m/min, and the rolling reduction ratio of the first passage of composite rolling is
70~80%；Then 2~4.5h is kept the temperature under the conditions of argon atmosphere and 400~520 DEG C, carries out the second passes, second
Secondary rolling reduction ratio is 20~30%；It is then at progress third passes, third passes reduction ratio under room temperature
50~80%, obtain copper-nanometer silicon carbide-aluminium sandwich structure rolling stock；
Step 5: copper-nanometer silicon carbide-aluminium sandwich structure rolling stock stabilization processes
To the copper-nanometer silicon carbide-aluminium sandwich structure rolling stock in argon atmosphere, protected under the conditions of 375~450 DEG C
Copper-nanometer silicon carbide-aluminium sandwich structure composite material is made in 12~18h of temperature.
2. copper-nanometer silicon carbide-aluminium sandwich structure composite material preparation method, feature exist according to claim 1
It in the washing is cleaned using distilled water or using deionized water.
3. copper-nanometer silicon carbide-aluminium sandwich structure composite material preparation method, feature exist according to claim 1
In the filtering be to be filtered using 3~5 layers of filter paper.
4. copper-nanometer silicon carbide-aluminium sandwich structure composite material preparation method, feature exist according to claim 1
It is plate in the copper material to be processed or is band；The Cu content of the copper material to be processed is 85~99.9wt%.
5. copper-nanometer silicon carbide-aluminium sandwich structure composite material preparation method, feature exist according to claim 1
It is plate in the aluminium to be processed or is band；The Al content of the aluminium to be processed is greater than 99wt%.
6. a kind of copper-nanometer silicon carbide-aluminium sandwich structure composite material, it is characterised in that the copper-nanometer silicon carbide-aluminium three
Mingzhi's structural composite material be any one of according to claim 1~5 described in copper-nanometer silicon carbide-aluminium sandwich structure it is multiple
Copper-nanometer silicon carbide prepared by the preparation method of condensation material-aluminium sandwich structure composite material.
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