CN109153914A - 具有优异基材相容性和优越镀液稳定性的酸性半水性氟化物活化的抗反射涂层清洁剂 - Google Patents
具有优异基材相容性和优越镀液稳定性的酸性半水性氟化物活化的抗反射涂层清洁剂 Download PDFInfo
- Publication number
- CN109153914A CN109153914A CN201680057581.XA CN201680057581A CN109153914A CN 109153914 A CN109153914 A CN 109153914A CN 201680057581 A CN201680057581 A CN 201680057581A CN 109153914 A CN109153914 A CN 109153914A
- Authority
- CN
- China
- Prior art keywords
- weight
- cleaning compositions
- compositions described
- acid
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562236355P | 2015-10-02 | 2015-10-02 | |
US62/236,355 | 2015-10-02 | ||
PCT/US2016/054411 WO2017059051A1 (en) | 2015-10-02 | 2016-09-29 | Acidic semi-aqueous fluoride activated anti-relective coating cleaners with superior substrate compatibilities and exceptional bath stability |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109153914A true CN109153914A (zh) | 2019-01-04 |
Family
ID=58424675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680057581.XA Pending CN109153914A (zh) | 2015-10-02 | 2016-09-29 | 具有优异基材相容性和优越镀液稳定性的酸性半水性氟化物活化的抗反射涂层清洁剂 |
Country Status (4)
Country | Link |
---|---|
KR (3) | KR20230022266A (zh) |
CN (1) | CN109153914A (zh) |
TW (1) | TWI784933B (zh) |
WO (1) | WO2017059051A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109423290A (zh) * | 2017-08-25 | 2019-03-05 | 弗萨姆材料美国有限责任公司 | 用于在制造半导体器件过程中相对于氮化钛选择性地去除氮化钽的蚀刻溶液 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4508591A (en) * | 1984-03-08 | 1985-04-02 | Hewlett-Packard Company | Polymethyl methacrylate compatible silicon dioxide complexing agent |
US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
US5560857A (en) * | 1993-10-19 | 1996-10-01 | Nippon Steel Corporation | Solution for cleaning silicon semiconductors and silicon oxides |
CN1447754A (zh) * | 2000-07-10 | 2003-10-08 | Ekc技术公司 | 用于清洁半导体设备上有机残余物和等离子蚀刻残余物的组合物 |
-
2016
- 2016-09-29 KR KR1020237003825A patent/KR20230022266A/ko not_active Application Discontinuation
- 2016-09-29 CN CN201680057581.XA patent/CN109153914A/zh active Pending
- 2016-09-29 KR KR1020207014631A patent/KR20200059326A/ko not_active IP Right Cessation
- 2016-09-29 WO PCT/US2016/054411 patent/WO2017059051A1/en active Application Filing
- 2016-09-29 KR KR1020187011893A patent/KR20180124830A/ko active Application Filing
- 2016-09-30 TW TW105131762A patent/TWI784933B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4508591A (en) * | 1984-03-08 | 1985-04-02 | Hewlett-Packard Company | Polymethyl methacrylate compatible silicon dioxide complexing agent |
US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
US5560857A (en) * | 1993-10-19 | 1996-10-01 | Nippon Steel Corporation | Solution for cleaning silicon semiconductors and silicon oxides |
CN1447754A (zh) * | 2000-07-10 | 2003-10-08 | Ekc技术公司 | 用于清洁半导体设备上有机残余物和等离子蚀刻残余物的组合物 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109423290A (zh) * | 2017-08-25 | 2019-03-05 | 弗萨姆材料美国有限责任公司 | 用于在制造半导体器件过程中相对于氮化钛选择性地去除氮化钽的蚀刻溶液 |
Also Published As
Publication number | Publication date |
---|---|
KR20230022266A (ko) | 2023-02-14 |
TW201730326A (zh) | 2017-09-01 |
WO2017059051A1 (en) | 2017-04-06 |
KR20200059326A (ko) | 2020-05-28 |
TWI784933B (zh) | 2022-12-01 |
KR20180124830A (ko) | 2018-11-21 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210415 Address after: Pennsylvania, USA Applicant after: Avantor Performance Materials, B.V. Applicant after: C-P.S.Xu Applicant after: C-H.W.Wei Applicant after: C-H.L.Tang Applicant after: H.C.Yang Address before: Pennsylvania, USA Applicant before: AVANTOR PERFORMANCE MAT Inc. Applicant before: C-P.S.Xu Applicant before: C-H.W.Wei Applicant before: C-H.L.Tang Applicant before: H.C.Yang |