CN109148309A - Encapsulating structure and forming method thereof - Google Patents
Encapsulating structure and forming method thereof Download PDFInfo
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- CN109148309A CN109148309A CN201811019434.0A CN201811019434A CN109148309A CN 109148309 A CN109148309 A CN 109148309A CN 201811019434 A CN201811019434 A CN 201811019434A CN 109148309 A CN109148309 A CN 109148309A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
Abstract
A kind of encapsulating structure and forming method thereof, wherein forming method includes: to provide the first wafer；Support plate is provided, there is cavity in support plate, the support plate includes the first cavity wall and the second cavity wall for surrounding cavity, there is the first opening through the first cavity wall in first cavity wall, there is the second opening through the second cavity wall in second cavity wall, and the first opening and the second opening are connected to cavity, the support plate further includes the switch being set in the second opening；First wafer is placed in the first cavity wall outer surface, makes first opening of the first wafer closing；It turns on the switch；After the first opening of first wafer closing, and after turning on the switch, decompression pumping process is carried out to cavity by the second opening；After depressurizing pumping process, the switch is closed, keeps cavity closed, the first wafer is bonded together with support plate.The method can reduce the heat budget of bonding the first wafer and support plate.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of encapsulating structure and forming method thereof.
Background technique
Development of the requirement to directions such as miniaturization, multifunction, environment-friendly types with people to electronic product, people's effort
Seek electronic system becoming small, integrated level is higher and higher, and function becomes more, thus thin device wafers and thin chip
It is processed into for the bottleneck of volume production ultrathin products, has drawn interim bonding reconciliation bonding technology on this basis.
Currently, the interim bonding technology of wafer includes: the bonding of laser solution, thermomechanical solution bonding and chemistry from solution bonding mechanism
The bonding of medical fluid solution.Wafer, which is temporarily bonded, to be specifically referred to wafer together with support plate interim combination.
However, need to be by means of temperature, so that heat budget is higher using the interim bonded wafer of prior art and support plate.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of encapsulating structures and forming method thereof, pre- with the heat for reducing bonding
It calculates.
In order to solve the above technical problems, the present invention provides a kind of encapsulating structure, comprising: support plate, the support plate is interior to have sky
Chamber, the support plate include the first cavity wall and the second cavity wall for surrounding cavity, are had in first cavity wall through the first cavity wall
First is open, and has the second opening through the second cavity wall in second cavity wall, and the first opening and the second opening are equal
It is connected to cavity, the support plate further includes the switch being set in the second opening；Positioned at the first of first cavity wall outer surface
Wafer, the first opening of the first wafer closing, the switch are in closed state, and cavity is closed, and the pressure in the cavity is small
In the pressure outside cavity.
Optionally, first wafer includes Cutting Road；Described first is open towards Cutting Road.
Optionally, also there is groove, the groove is not connected to backwards to cavity and with the cavity, institute in first cavity wall
It is around the first opening and mutually discrete with the first opening to state groove；First wafer further includes adjacent with the Cutting Road
Chip；The chip includes the first convex block, and first convex block is located at surface of the chip towards the first cavity wall；Described first is convex
Block is located in the groove.
Optionally, the chip includes several first convex blocks；Several first convex blocks of the same chip are located at same
In a groove.
Optionally, the depth of the groove is more than or equal to the height of the first convex block.
Optionally, the number of first opening is for 1 or multiple.
Optionally, first cavity wall and the second cavity wall are oppositely arranged；Alternatively, first cavity wall and the second cavity wall are mutual
Connection.
Correspondingly, including: to provide the first wafer the present invention also provides a kind of forming method of encapsulating structure；Support plate is provided,
There is cavity, the support plate includes the first cavity wall and the second cavity wall for surrounding cavity, has in the first cavity wall and passes through in the support plate
The first opening of the first cavity wall is worn, there is the second opening through the second cavity wall, and the first opening and second is opened in the second cavity wall
Mouth is connected to cavity, and the support plate further includes the switch being set in the second opening；First wafer is placed in outside the first cavity wall
Surface makes first opening of the first wafer closing；It turns on the switch；After first wafer closing, first opening, and open
Guan Hou carries out decompression pumping process to cavity by the second opening；After depressurizing pumping process, the switch is closed, keeps cavity close
It closes, the first wafer is bonded together with support plate.
Optionally, the decompression pumping process includes: to be taken out some or all of air in cavity by the second opening
Out.
Optionally, after the first wafer and support plate are bonded together, further includes: open the switch, outside air passes through
Second opening enters in cavity, is bonded the first wafer with support plate solution.
Optionally, first wafer includes opposite the first face and the second face；It is described after first wafer is bonded with support plate
First face is bonded with the first cavity wall；It is described before the first wafer and the bonding of support plate solution after the first wafer and support plate bonding
Forming method further include: reduction processing is carried out to second face；After carrying out reduction processing to second face, described the
Dihedron has third opening, the third opening at metal layer and in the passivation layer of layer on surface of metal, the passivation layer
Bottom-exposed goes out metal layer；Second wafer is provided, second wafer further includes several second convex blocks, adjacent second convex block it
Between have underfill；Second wafer is placed in passivation layer surface, the second convex block is placed in third opening, makes the second convex block
Weld together with metal layer；After second wafer is placed in passivation layer surface, plastic packaging is formed in the side wall of second wafer
Layer.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In the forming method that technical solution of the present invention provides, first wafer is for closing the first opening.When the first crystalline substance
It after the first opening of circle closing, turns on the switch, decompression pumping process is carried out to cavity by the second opening, and turn off the switch, so that
Pressure in the cavity is less than the pressure outside cavity, then the external environment applies the pressure for being directed toward cavity to the first crystal column surface
Therefore power is advantageously implemented being bonded for the first wafer and support plate.Also, during the first wafer of the bonding and support plate,
Without realizing the bonding of the first wafer and support plate by temperature, therefore, the heat of bonding the first wafer and support plate is advantageously reduced
Budget.
Detailed description of the invention
Fig. 1 to Fig. 2 is a kind of structural schematic diagram of each step of forming method of encapsulating structure；
Fig. 3 to Fig. 9 is the structural schematic diagram of each step of the forming method of one embodiment of the invention encapsulating structure.
Specific embodiment
As described in background, the heat budget using prior art bonded wafer and support plate is higher.
Fig. 1 to Fig. 2 is a kind of structural schematic diagram of each step of forming method of encapsulating structure.
Referring to FIG. 1, providing wafer 100.
Referring to FIG. 2, providing support plate 101；Using bonding technology, wafer 100 is made to be bonded together with support plate 101.
In the above method, after interim bonding technology bonded wafer 100 and support plate 101, further includes: solution bonded wafer
100 and support plate 101, different according to solution bonding mechanism, the interim bonding technology includes: laser solution bonding technology, thermomechanical solution
Bonding technology and chemical drugs lyolysis bonding.But either which kind of interim bonding technology is both needed to just be able to achieve crystalline substance by means of temperature
The interim bonding of circle 100 and support plate 101, so that the heat budget of interim bonded wafer 100 and support plate 101 is higher.
To solve the technical problem, the present invention provides a kind of forming method of encapsulating structure, there is cavity in support plate,
Support plate includes the first cavity wall and the second cavity wall for surrounding cavity, has the first opening through the first cavity wall in the first cavity wall, the
There is the second opening through the second cavity wall, and the first opening and the second opening are connected to cavity in two cavity walls, support plate further includes
The switch being set in the second opening；First wafer is placed in the first cavity wall outer surface, opens the first wafer closing first
Mouthful；It turns on the switch；After the first opening of first wafer closing, and after turning on the switch, cavity is subtracted by the second opening
Press pumping process；After depressurizing pumping process, the switch is closed, keeps cavity closed, the first wafer is bonded together with support plate.
The method can reduce the heat budget of bonding the first wafer and support plate.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 3 to Fig. 9 is the structural schematic diagram of each step of the forming method of one embodiment of the invention encapsulating structure.
Referring to FIG. 3, providing the first wafer 200.
The material of first wafer 200 includes silicon.First wafer 200 includes several mutually discrete chips
(not marking in figure) has Cutting Road (not marking in figure) between adjacent chips, and each chip surface has pad (in figure
It is not shown), the pad is used to export the electric signal in the first wafer 200.
In the present embodiment, subsequent first opening is towards Cutting Road, and therefore, the size of the Cutting Road determines the first opening
The full-size of setting.When the size of the Cutting Road is larger, the full-size that the first opening can be arranged is larger.Described
One wafer 200 is for closing the first opening, and therefore, first opening is larger with the contact area of the first wafer 200.It is subsequent right
Cavity carries out decompression pumping process, and turns off the switch, so that the pressure in cavity is less than the pressure outside cavity.Due to the first opening
It is larger with the contact area of the first wafer 200, therefore, external environment to the first wafer 200 apply direction cavity pressure compared with
Greatly, then first wafer 200 and support plate to be bonded firmness stronger；Correspondingly, when the size of the Cutting Road is smaller,
The full-size that first opening can be arranged is smaller.First wafer 200 is for closing the first opening, therefore, described first
It is open smaller with the contact area of the first wafer 200.It is subsequent that decompression pumping process is carried out to cavity, and turn off the switch, make to have leisure
Intracavitary pressure is less than the pressure outside cavity.Since the first opening is smaller with the contact area of the first wafer 200, it is extraneous
Environment is smaller to the pressure for the direction cavity that the first wafer 200 applies, then first wafer 200 and support plate are bonded secured journey
It spends weaker.
In the present embodiment, several the first convex blocks 201 are formed in each bond pad surface.In other embodiments, each
Bond pad surface does not form first convex block.
In the present embodiment, by a chip surface tool, there are three be illustrated for the first convex block 201.
In other embodiments, a chip surface has 1~2 the first convex blocks；Alternatively, a chip surface has
3 or more the first convex blocks.
The material of first convex block 201 is metal, and the metal includes: copper or aluminium.
First face 11 of first wafer 200 is bonded for subsequent with the first cavity wall；The second of first wafer 200
Face 12 is used for the second wafer of subsequent placement.
Referring to FIG. 4, providing support plate (not marking in figure), there is cavity 203 in the support plate, the support plate includes surrounding
The first cavity wall 204 and the second cavity wall 205 of cavity 203 have the first opening through the first cavity wall 204 in first cavity wall 204
206, there is in the second cavity wall 205 the second opening 207 through the second cavity wall 205, and the first opening 206 and the second opening 207
It is connected to cavity 203, the support plate further includes the switch 208 being set in the second opening 207.
In the present embodiment, first cavity wall 204 and the second cavity wall 205 are oppositely arranged.In other embodiments, described
First cavity wall and the second cavity wall are connected with each other.
Subsequent first wafer 200 is placed in 204 surface of the first cavity wall, and first wafer 200 is opened for closing first
Mouth 206.It is subsequent to turn on the switch 208, decompression pumping process is carried out by second 207 pairs of cavitys 203 of opening, at the decompression pumping
208 are turned off the switch after reason, then the pressure in cavity 203 is less than the pressure outside cavity, and external environment is to 200 second face of the first wafer
Therefore the pressure of 12 application towards cavitys 203 is conducive to the first wafer 200 and is bonded together with the first cavity wall 204.It is being bonded
During first wafer 200 and support plate, without therefore, advantageously reducing interim bonding 200 He of the first wafer in temperature
The heat budget of support plate.
The size of the cavity 203 influences the firmness of the first wafer 200 and support plate bonding, specifically, working as the sky
The volume of chamber 203 is bigger, and the air that the cavity 203 can accommodate is more, then subsequently through the second opening 207 by cavity 203
It is larger with the pressure difference outside cavity 203 in the cavity 203 when interior air is completely drawn out, so that subsequent turn off the switch 208
Afterwards, external environment applies 200 second face 12 of the first wafer larger towards the pressure of cavity 203, therefore, the first wafer 200 with
The bonding firmness of support plate is stronger；Correspondingly, when the volume of the cavity 203 is smaller, what the cavity 203 can accommodate
Air is fewer, even if then the air in cavity 203 is completely drawn out subsequently through the second opening 207, in the cavity 203 with
Pressure difference outside cavity 203 is still smaller, then it is subsequent turn off the switch 208 after, external environment to 200 second face 12 of the first wafer apply
The pressure towards cavity 203 it is smaller, therefore, the first wafer 200 and the first cavity wall 204 to be bonded firmness weaker.
The number of first opening 206 is for 1 or multiple.
In the present embodiment, it is illustrated with first opening 206 for 4.In other embodiments, it described first opens
The number of mouth is 1~4；Alternatively, the number of first opening is 4 or more.
Subsequent that first wafer 200 is placed in 204 surface of the first cavity wall, first wafer 200 is for closing the first opening
206, if the number of first opening 206 is more, first opening 206 is larger with the contact area of the first wafer 200.
One timing of pressure difference inside and outside subsequent cavity 203, the pressure towards cavity 203 that external environment generates the first wafer 200
It is larger, then the first wafer 200 and support plate to be bonded firmness stronger；Correspondingly, if it is described first opening 206 number compared with
Few, then first opening 206 is smaller with the contact area of the first wafer 200.Pressure difference inside and outside subsequent cavity 203 is certain
When, the pressure towards cavity 203 that external environment generates the first wafer 200 is smaller, then the first wafer 200 and support plate are bonded
Firmness is weaker.
Although the number of first opening 206 is more, be conducive to improve the first wafer 200 and support plate is bonded secured journey
Degree, still, is not to say that the number of the first opening 206 is The more the better, this is because: cutting when the number of the first opening 206 is more than
When cutting number, the first excessive opening 206 is difficult to both facing to Cutting Road, and the opening of part first 206 will be towards between Cutting Road
Chip, then it is subsequent when carrying out decompression pumping process, easily the chip between Cutting Road is impacted.
In the present embodiment, the number of first opening 206 is identical as the number of Cutting Road, and subsequent first wafer
After 200 are placed in 204 surface of the first cavity wall, the first opening 206 is towards Cutting Road, and one first opening 206 is cut towards one
It cuts.
In other embodiments, the number of first opening is less than the number of Cutting Road, when subsequent first wafer is placed in
Behind first cavity wall surface, the first opening is towards Cutting Road, and one first opening one Cutting Road of direction；Alternatively, first opens
The number of mouth is greater than the number of Cutting Road, when subsequent first wafer is placed in the first cavity wall surface, several the first opening directions
Cutting Road, and one first opening one Cutting Road of direction.
In the present embodiment, since the surface of chip has the first convex block 201, it is also set in first cavity wall 204
It sets groove (not marked in figure), the groove is not connected to backwards to cavity 203 and with cavity 203, and the groove is located at the first opening
Around 206, and the groove and the first opening 206 are mutually discrete.
In other embodiments, when first face of wafer does not have the first convex block, then first cavity wall does not include
Groove.
In the present embodiment, the depth of the groove is equal with the height of the first convex block 201, then subsequent by the first wafer
200 when being placed in the first 204 surface of cavity wall, is conducive to contact the first face 11 at the top of the first opening 204, enables the first opening 204
It is enough to be closed by the first wafer 200.
In other embodiments, the depth of the groove is greater than the height of the first convex block, then subsequent first wafer is placed in the
Behind one cavity wall surface, be conducive to the first face that first open top contacts the first wafer, so that the first opening can be by the
The closing of one wafer.
Second opening 207 is extracted to outside cavity 203 as the air in cavity 203, alternatively, outside cavity 203
Air enters the channel in chamber 203.
The switch 208 is for closing or opening the second opening 207.
Referring to FIG. 5, the first wafer 200 is placed in 204 outer surface of the first cavity wall, open the first wafer 200 closing first
Mouth 206.
First opening 206 of the closing of first wafer 200, it is subsequent to turn on the switch 208, pass through second 207 pairs of cavitys of opening
203 carry out decompression pumping process, and turn off the switch 208, and the pressure in cavity 203 is made to be less than the pressure outside cavity 203, then extraneous
Environment applies the pressure towards cavity 203 to the first wafer 200, is conducive to the first wafer 200 and support plate is bonded together.
In the present embodiment, first opening 206 is towards Cutting Road.
In other embodiments, a chip include the first convex block number be 2 or 2 or more when, described first
It is open towards the chip between adjacent first convex block.
In the present embodiment, the meaning of first opening 206 towards the Cutting Road is: on the one hand, subsequently through second
The 207 pairs of cavitys 203 that are open carry out decompression pumping process, and turn off the switch 208, then the pressure in cavity 203 is less than outside cavity 203
Pressure, then external environment applies the pressure for being directed toward cavity 203 on 200 surface of the first wafer, therefore, is conducive to temporarily be bonded the
One wafer 200 and support plate；On the other hand, first opening 206 is towards Cutting Road, and is arranged in the Cutting Road without circuit,
It is then subsequent when carrying out decompression pumping process, it is not easy to influence the performance of chip.
In the present embodiment, the number of first opening 206 is identical as the number of Cutting Road, one first opening 206
One Cutting Road of corresponding direction, so that the number of the first opening 206 is more, then when the first wafer 200 is placed in 204 table of the first cavity wall
Face, first opening 206 are larger with the contact area of the first wafer 200.Subsequently through second opening 207 pairs of cavitys 203 into
Row decompression pumping process, makes the pressure in cavity 203 be less than the pressure outside cavity 203.Pressure difference inside and outside cavity 203 is certain
When, since the first opening 206 is larger with the contact area of the first wafer 200, then external environment applies the first wafer 200 and is directed toward
Pressure in cavity 203 is larger, then to be bonded firmness stronger for first wafer 200 and the first cavity wall 204 interim.
In other embodiments, the number of the first opening is less than the number of Cutting Road, then subsequent first wafer 200 is placed in the
When one 204 surface of cavity wall, first opening is smaller with the contact area of the first wafer；Alternatively, the number of first opening
More than the number of Cutting Road, several first openings are towards Cutting Road, several first openings are towards the chip between Cutting Road.
In the present embodiment, after the first wafer 200 is placed in 204 surface of the first cavity wall, on the same chip first
Convex block 201 is placed in the same groove.
In other embodiments, when first face of wafer is without the first convex block, support plate third face un-grooved, because
This, need to only be bonded the first face of wafer and the first cavity wall；Alternatively, a groove accommodates 2 when first mask of wafer is fluted
The first convex block on a or 2 or more chips.
Referring to FIG. 6, turning on the switch 208；First wafer 200 closing first opening 206 after, and turn on the switch 208 it
Afterwards, decompression pumping process is carried out to cavity 203.
In the present embodiment, after the first opening 206 of the first wafer 200 closing, 208 are turned on the switch.In other embodiments
In, after turning on the switch, make the first opening of the first wafer closing.
After the first wafer 200 the first opening 206 of closing, 208 are turned on the switch, cavity 203 is carried out at decompression pumping
Reason, so that the pressure in cavity 203 is less than the pressure outside cavity 203, then when subsequent closure switch 208, external environment is to first
Wafer 200 generates the pressure towards cavity 203, is advantageously implemented being bonded between the first wafer 200 and support plate 202.
In the present embodiment, the decompression pumping process includes: by the second opening 207 that the whole in cavity 203 is empty
Gas extraction, so that being vacuum state in cavity 203, then the pressure difference inside and outside cavity 203 is larger, then when subsequent closure switch 208,
External environment generates the first wafer 200 larger towards the pressure of cavity 203.
In other embodiments, the decompression pumping process includes: to be taken out the partial air in cavity by the second opening
Out.
Referring to FIG. 7, turn off the switch 208 after decompression pumping process, keep cavity 203 closed, the first wafer 200 and load
Plate is bonded together.
During depressurizing pumping process, first opening 206 of the closing of the first wafer 200.Depressurize pumping process it
Afterwards, 208 are turned off the switch, 203 enclosure space of cavity is made, at this point, the pressure in cavity 203 is less than the pressure outside cavity 203, then
External environment applies the pressure towards cavity 203 to the first wafer 200, therefore, is conducive to the first wafer 200 and faces with support plate realization
Shi Jianhe.During interim bonding, without can be realized interim between the first wafer 200 and support plate in temperature
Bonding, therefore, advantageously reduces heat budget.
Referring to FIG. 8, subtracting after the first wafer 200 and support plate bonding to the second face 12 of first wafer 200
Thin processing；After carrying out reduction processing to the second face 12 of first wafer 200, in the second face of first wafer 200
12 place the second wafer 209；After placing the second wafer 209, plastic packaging layer 212 is formed in the side wall of the second wafer 209.
After carrying out reduction processing to the second face 12 of first wafer 200, before stacking the second wafer 209, also wrap
Include: in the second face 12 of the first wafer 200, formation metal layer 213 and the passivation layer positioned at 213 surface of metal layer (are not marked in figure
Out), there is third opening (not marking in figure), the third open bottom exposes the portion of metal layer 213 in the passivation layer
Divide top surface.
The material of the metal layer 213 is metal, and the metal includes aluminium, copper, tin, nickel, gold or silver.The passivation layer
Material include: polyimides, the double oxazoles of polyparaphenylene benzo or photosensitive benzocyclobutene
Second wafer, 209 surface has the second convex block 210, has underfill between adjacent second convex block 210
211.The underfill 211 is for protecting the second convex block 210.
It include: to set second convex block 210 in the method that the second wafer 209 is placed in the second face 12 of the first wafer 200
In in third opening, weld together the second convex block 210 and the metal layer 213 of third open bottom.
The forming method of the plastic packaging layer 212 includes: the side wall and top surface, Yi Ji in second wafer 209
The surface of one wafer 200 forms plastic packaging film；The plastic packaging film is planarized, until exposing the top surface of the second wafer 209, shape
At plastic packaging layer 212.
The material of the plastic packaging film includes: polyimide resin, benzocyclobutane olefine resin, polybenzoxazoles resin, poly- pair
Terephtha-late, polycarbonate, polyethylene terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyene
Hydrocarbon, polyether sulfone, polyamide, polyurethane, ethylene-vinyl acetate copolymer, polyvinyl alcohol.
In the present embodiment, the formation process of the plastic packaging film is Shooting Technique (injection molding).At other
In embodiment, the formation process of the plastic packaging film includes: to turn modeling technique (transfer molding) or silk-screen printing technique.
It include: offer mold using the method that Shooting Technique forms plastic packaging film；Capsulation material is filled in the mold, is made
The capsulation material coats the side wall and top surface of second wafer 209；Elevated cure, shape are carried out to the capsulation material
At plastic packaging film.
The technique for planarizing the plastic packaging film includes chemical mechanical milling tech.
In the present embodiment, it is illustrated so that the number of second wafer 209 is two as an example.In other embodiments
In, the number of second wafer is 1 or 2 or more.
It is formed after the plastic packaging layer 212, further includes: form bonding in the plastic packaging layer 212 and 209 surface of the second wafer
Layer (not marked in figure).The adhesive layer is for bonding the second wafer 209.
In the present embodiment, the adhesive layer is ultraviolet adhesive glue, and the ultraviolet adhesive glue is when without ultraviolet irradiation
Viscosity is very high, and the crosslinking chemical bond after ultraviolet light in material is interrupted viscosity is caused to decline to a great extent or disappear.
In other embodiments, the adhesive layer includes: acrylate pressure sensitive adhesive or epoxy resin pressure-sensitive glue.
Referring to FIG. 9, being formed after adhesive layer, 208 are turned on the switch, outside air enters cavity by the second opening 207
In 203, it is bonded the first wafer 200 with support plate solution.
208 are turned on the switch, outside air can be entered in cavity 203 by the second opening 207, after a period of time, cavity
Pressure is equal inside and outside 203, then external environment is difficult to apply pressure direction cavity 203 on the second face 12 of the first wafer 200
Pressure, therefore, the first wafer 200 are bonded with the solution of support plate 202.During solving bonding, without external force, so that first is brilliant
When circle 200 is separated with support plate, it is not susceptible to fragment.
Also, during solution the first wafer 200 of bonding is with support plate, solution bonding only can be realized with turning on the switch 208,
Without by laser, heating or solvent, so that processing step is simple, and to the of reduced contamination of environment.
Correspondingly, the present invention also provides a kind of encapsulating structures, referring to FIG. 8, including:
Support plate, the support plate is interior to have cavity 203, and the cavity 203 includes 204 He of the first cavity wall for surrounding cavity 203
Second cavity wall 205 has the first opening 206 through the first cavity wall 204, second cavity wall 205 in first cavity wall 204
In have through the second cavity wall 205 second opening 207, and it is described first opening 206 and second opening 207 with cavity 203
Connection, the support plate further includes the switch 208 being set in the second opening 207；
The first wafer 200 positioned at 204 outer surface of the first cavity wall, the first opening 206 of the first wafer 200 closing, institute
It states switch 208 and is in closed state, cavity 203 is closed, and the pressure in the cavity 203 is less than the pressure outside cavity 203.
First wafer 200 includes Cutting Road；First opening 206 is towards Cutting Road.
In first cavity wall 204 also have groove (not shown), the groove backwards to cavity 203 and with the sky
Chamber 203 is not connected to, and the groove is around the first opening 206 and mutually discrete with the first opening 206；First wafer
200 further include the chip adjacent with the Cutting Road；The chip includes the first convex block 201, and first convex block 201 is located at core
The surface of piece the first cavity wall 204 of direction；First convex block 201 is located in the groove.
The chip includes several first convex blocks 201；Several first convex blocks 201 of the same chip are located at same
In groove.
The depth of the groove is more than or equal to the height of the first convex block 201.
The number of first opening 206 is for 1 or multiple.
First cavity wall 204 and the second cavity wall 205 are oppositely arranged；Alternatively, first cavity wall 204 and the second cavity wall
205 are connected with each other.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of encapsulating structure characterized by comprising
Support plate, has cavity in the support plate, and the support plate includes the first cavity wall and the second cavity wall for surrounding cavity, and described first
There is the first opening through the first cavity wall in cavity wall, there is the second opening through the second cavity wall in second cavity wall, and
The first opening and the second opening are connected to cavity, and the support plate further includes the switch being set in second opening；
The first wafer positioned at first cavity wall outer surface, the first opening of the first wafer closing, the switch are in closed form
State, cavity is closed, and the pressure in the cavity is less than the pressure outside cavity.
2. encapsulating structure as described in claim 1, which is characterized in that first wafer includes Cutting Road；
Described first is open towards Cutting Road.
3. encapsulating structure as claimed in claim 2, which is characterized in that also have groove, the groove in first cavity wall
It is not connected to backwards to cavity and with the cavity, the groove is located at around the first opening and mutually discrete with the first opening；It is described
First wafer further includes the chip adjacent with the Cutting Road；The chip includes the first convex block, and first convex block is located at core
The surface of piece the first cavity wall of direction；First convex block is located in the groove.
4. encapsulating structure as claimed in claim 3, which is characterized in that the chip includes several first convex blocks；It is same
Several first convex blocks of chip are located in the same groove.
5. encapsulating structure as claimed in claim 3, which is characterized in that the depth of the groove is more than or equal to the first convex block
Height.
6. encapsulating structure as described in claim 1, which is characterized in that the number of first opening is for 1 or multiple.
7. encapsulating structure as described in claim 1, which is characterized in that first cavity wall and the second cavity wall are oppositely arranged；Or
Person, first cavity wall and the second cavity wall are connected with each other.
8. a kind of forming method of encapsulating structure characterized by comprising
First wafer is provided；
Support plate is provided, there is in the support plate cavity, the support plate includes the first cavity wall and the second cavity wall for surrounding cavity, and first
There is the first opening through the first cavity wall in cavity wall, there is the second opening through the second cavity wall, and first in the second cavity wall
Opening and the second opening are connected to cavity, and the support plate further includes the switch being set in second opening；
First wafer is placed in the first cavity wall outer surface, makes first opening of the first wafer closing；
Open the switch；
After the first opening of first wafer closing, and after turning on the switch, cavity is carried out at decompression pumping by the second opening
Reason；
After depressurizing pumping process, the switch is closed, keeps cavity closed, the first wafer is bonded together with the support plate.
9. the forming method of encapsulating structure as claimed in claim 8, which is characterized in that the decompression pumping process includes: logical
The second opening is crossed to extract some or all of air in cavity out.
10. the forming method of encapsulating structure as claimed in claim 8, which is characterized in that the first wafer and support plate are bonded in one
After rising, further includes: open the switch, outside air is entered in cavity by the second opening, makes the first wafer and support plate solution
Bonding.
11. the forming method of encapsulating structure as claimed in claim 10, which is characterized in that first wafer includes opposite
First face and the second face；After first wafer is bonded with support plate, first face is bonded with the first cavity wall；In the first wafer and support plate
After bonding, before the first wafer and the bonding of support plate solution, the forming method further include: second face is carried out place is thinned
Reason；After carrying out reduction processing to second face, metal layer is formed in second face and positioned at the passivation of layer on surface of metal
Layer, the passivation layer is interior to have third opening, and the third open bottom exposes metal layer；Second wafer is provided, described
Two wafers further include several second convex blocks, have underfill between adjacent second convex block；Second wafer is placed in blunt
Change layer surface, be placed in the second convex block in third opening, welds the second convex block with metal layer and be together；Second wafer is set
After passivation layer surface, plastic packaging layer is formed in the side wall of second wafer.
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|---|---|---|---|
| CN201811019434.0A CN109148309A (en) | 2018-09-03 | 2018-09-03 | Encapsulating structure and forming method thereof |
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| CN201811019434.0A CN109148309A (en) | 2018-09-03 | 2018-09-03 | Encapsulating structure and forming method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789379A (en) * | 2009-01-22 | 2010-07-28 | 日月光半导体制造股份有限公司 | Manufacturing method for package structure |
| CN102339780A (en) * | 2011-09-30 | 2012-02-01 | 格科微电子（上海）有限公司 | Adsorbing and supporting device of wafer and substrate and semiconductor processing equipment of wafer |
| US20120094418A1 (en) * | 2010-10-18 | 2012-04-19 | Triquint Semiconductor, Inc. | Wafer Level Package and Manufacturing Method Using Photodefinable Polymer for Enclosing Acoustic Devices |
| CN103855069A (en) * | 2014-01-26 | 2014-06-11 | 上海瑞丰光电子有限公司 | Adsorption device |
| CN108428637A (en) * | 2018-03-09 | 2018-08-21 | 中南大学 | A kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste |
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- 2018-09-03 CN CN201811019434.0A patent/CN109148309A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789379A (en) * | 2009-01-22 | 2010-07-28 | 日月光半导体制造股份有限公司 | Manufacturing method for package structure |
| US20120094418A1 (en) * | 2010-10-18 | 2012-04-19 | Triquint Semiconductor, Inc. | Wafer Level Package and Manufacturing Method Using Photodefinable Polymer for Enclosing Acoustic Devices |
| CN102339780A (en) * | 2011-09-30 | 2012-02-01 | 格科微电子（上海）有限公司 | Adsorbing and supporting device of wafer and substrate and semiconductor processing equipment of wafer |
| CN103855069A (en) * | 2014-01-26 | 2014-06-11 | 上海瑞丰光电子有限公司 | Adsorption device |
| CN108428637A (en) * | 2018-03-09 | 2018-08-21 | 中南大学 | A kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste |
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