CN108428637A - A kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste - Google Patents
A kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste Download PDFInfo
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
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Abstract
A kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste, includes the following steps：1）Upper and lower chip is respectively washed totally；2）Silver paste is coated in micro- copper post of upper chip, scaling powder is coated in micro- copper post of lower chip；3) upper and lower chip is fixed to by ultrasound absorption on ultrasonic suction nozzle and pedestal, then alignment carries out warm；4) 180 200 °C are preheating to, so that upper and lower chip is contacted, starts to be bonded, and start to pressurize；5) ultrasonic suction nozzle is adsorbed on upper chip and carries out ultrasonic vibration, in the horizontal direction, lower chip is fixed with pedestal for direction of vibration, and the time of ultrasonic vibration is 1 2s, and constant temperature rises to 260 300 °C；6）After 1.5 3min of heat-insulation pressure keeping, stop ultrasonic vibration and heating, release vacuum suction, the chip for completing bonding is cooled down with pedestal.The present invention can be achieved sintering temperature and rise mildly, and Thermal Shock Damage will not be caused to chip, and can also be achieved the low temperature of micron silver paste, quick, strong connection sintering.
Description
Technical field
The present invention relates to a kind of method for being sintered using silver paste and realizing that semiconductor effectively connects, more particularly to a kind of ultrasound is auxiliary
The method for helping micron silver paste sintering to realize micro- copper post interconnection.
Background technology
Microelectric technique is the core technology of high-tech and information industry, is formd including design, manufacture, encapsulation, test
The four big industrial structures of joint development.Chip interconnection technique is played an important role in microelectronics Packaging.Traditional chip interconnection
Solder is based on leypewter.Prohibit lead decree as European Union and China promulgate in succession《Limit harmful substance》（ROHS）, lead by
Gradually exit use.However, conventional brazing solidifies to realize connection by the thawing of solder, temperature when processing is higher than solder
Fusing point, 75% of temperature no more than solder melt point when work, if necessary to higher operating temperature, it is necessary to fusing point higher
Solder, it is necessary to higher processing temperature.Solder based on tinbase, operating temperature is no more than 200 °C, and only minority contains
The solder of gold, it is expensive if Au80Sn20 can be operated in 250 °C or more.
According to related document report, it is used for aircraft, the electronic equipment of automobile, space probation, oil/gas deep well probing may to need
300 °C or higher operating temperature.With the update of consumer electronics, the promotion of performance along with integrated level increase,
The micromation of component, the user interface of enhancing, abundant figure and remarkable audio quality need higher function, faster
Data rate and higher bandwidth, will produce higher heat.Wide band gap semiconducter（WBG）Such as GaN and SiC, it is considered to be under
Generation power module, due to its high voltage blocking ability, hot operation, the excellent properties of high switching frequency and low-power consumption,
Especially under high power and high-temperature higher than 300 °C and cause very big concern in power electronics field, and at some
High-power die field has been substituted silicon semiconductor such as power MOSFET and IGBT.
In the new situation, soldering has been difficult meet demand.Silver paste sintering is considered as that most promising soldering substitutes
Object has gained universal acceptance.According to Gibbs-Thomson equations, the fusing point of the smaller substance of particle is lower.The silver of 2.4nm
The fusing point of grain is 350 °C, and block silver point is 961 °C, and the fusing point on Argent grain surface can also be lower.However, due to existing
Silver paste sintering method there is also some problems that there are no used in produce reality.
Conventional sintering process duration is up to 200 minutes or so, and for this problem, many research workers propose
New method, such as the silver paste sintering of electric current auxiliary, microwave sintering, select laser sintered, these sintering methods can only at 1 second
Reach 1000 °C or more, realizes the Fast Sintering of silver paste, however heating drastically will necessarily generate electronic component heat punching
It hits.
Invention content
The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, provide a kind of ultrasonic wave added micron silver paste burning
The method of solid existing micro- copper post interconnection, it use the mode of ultrasonic wave added silver paste sintering, it can be achieved that sintering temperature rise it is mild,
Thermal Shock Damage will not be caused to chip, and can also be achieved the low temperature of micron silver paste, quick, strong connection sintering.
In order to solve the above technical problems, technical solution proposed by the present invention is：A kind of ultrasonic wave added micron silver paste sintering is real
The method of existing micro- copper post interconnection, includes the following steps：
1）Upper and lower chip is respectively washed totally；
2）Silver paste is coated in micro- copper post of upper chip, scaling powder is coated in micro- copper post of lower chip；
3) upper and lower chip is fixed to by ultrasound absorption on ultrasonic suction nozzle and pedestal, then alignment carries out warm；
4) it is preheating to 180-200 °C, so that upper and lower chip is contacted, starts to be bonded, and start to pressurize, it will be first before sintering carries out
The organic principle in silver paste is removed, to ensure that the organic principle in silver paste is eliminated as much as and improves flux activity, therefore go up,
When lower chip reaches 180-200 °C, start to contact；
5) ultrasonic suction nozzle is adsorbed on upper chip and carries out ultrasonic vibration, in the horizontal direction, lower chip is solid with pedestal for direction of vibration
Fixed motionless, upper and lower chip carries out reciprocating friction movement in contact surface, and the reciprocating friction movement of ultrasonic vibration is conducive to micron silver
Grain rearranges, and forms compact texture, and rubbing action will produce certain heat, promote the fusing of micron particles.Micron
The sintering of general grain need higher temperature or heat preservation longer time, ultrasonic vibration to compensate for this portion of energy；Ultrasound is shaken
The dynamic time is 1-2s, and ultrasonic effect, which essentially consists in, makes Argent grain rearrange, long action time, instead can be to formation
Intensity generates destruction, and sintering temperature persistently rises during this, until temperature rise is to 260-300 °C；
6）After heat-insulation pressure keeping 1.5-3min, stop ultrasonic vibration and heating, release vacuum suction, completes the chip of bonding with pedestal
It is cooling.
Technical solution proposed by the present invention is：The step 1）In cleaning process be：First with after dilute hydrochloric acid use ethyl alcohol into
Row is cleaned by ultrasonic.
Further, the step 2）In silver paste used refer to dispersion micron-sized Argent grain in organic solvent, it is described
Organic solvent is ether lipid organic solvent, and a diameter of 1-2um of the Argent grain, silver content is not less than 82% in silver paste, due to small
Particle has high surface energy, there is the characteristic of self-assemble, can guarantee Argent grain in chip in organic solvent Argent grain dispersion
Upper coating is uniform, and the surface energy and dimensional effect of micron silver are much smaller than nano particle, and sintering difficulty is much larger than nano particle, micron
Silver paste is feasible, can be easy to be generalized to nanometer silver paste, the cost of micron silver paste is far below nanometer silver paste.
Further, the step 3）In upper and lower chip be fixed on ultrasonic head and pedestal by vacuum suction respectively.
Further, the step 4）In the pressure of pressure process be 35-45MPa, pressure para-linkage intensity has very
Big influence, in a certain range, pressure is bigger, and bond strength is bigger, and pressure is too big, can be silver paste to extruding, can also be to core
Piece generates side effect, and when pressure is 20MPa, intensity is 30MPa or so；Pressure reaches 40MPa, and intensity can reach 50Mpa, leads to
Over-subtraction short grained size reduces pressure.
Further, the step 5）The vibration frequency of middle ultrasonic vibration is 38.5-41.5KHz, and Oscillation Amplitude is
0.3-3.6 μm, a kind of ultrasonic wave of high-frequency short arc is wanted in real online monitoring of bonding, above-mentioned data can pass through laser-Doppler
Vialog measures.
Further, the step 5）In ultrasonic power be 50-70W, power more large amplitude is bigger, and amplitude is too big, no
Conducive to the alignment of upper and lower chip bump, the too small ultrasonication effect unobvious of power.
Further, the step 6）The shear strength of upper and lower chip junction is not less than 50MPa after the completion.
Further, the step 3）With step 4）In sintering temperature-rise period be in air by way of heat transfer
It is heated.
Further, the step 6）In cooling procedure be：It is cold that upper and lower chip carries out nature with pedestal in air
But, the diffusion for being conducive to silver and copper atom, is conducive to bond strength and is further formed.
Compared with the prior art, the advantages of the present invention are as follows：
1, the achievable micron silver paste low temperature Fast Sintering of the present invention, and can realize the strong interconnection of micro- copper post, pass through shaking for ultrasound
Action is with making micron particles rearrange, and the fusing point of particle surface is far below particle itself, and rearranging makes Argent grain densification heap
It is folded, bonding is realized by the diffusion of particle surface；And it in interface frictional heat, is spread from interface to both sides, this portion of energy
The energy needed for sintering process is compensated, the temperature of sintering is reduced, shortens the time of sintering；
2, the present invention solves the problems, such as time-consuming present in generally sintering, and will not generate heat punching to chip as other Fast Sinterings
It hits, general sintering process needs 100-200 minutes, and ultrasonic wave added micron silver paste is sintered whole process and is no more than 10 minutes, rises
Warm speed is mild；
3, silver paste sintering and ultrasonic vibration are combined together by the present invention, provide the sintering side in a kind of new field of microelectronics
Method is conducive to push the development of field of microelectronics.
Description of the drawings
Fig. 1 is the principle of the present invention schematic diagram.
Specific implementation mode
To facilitate the understanding of the present invention, the present invention is made below in conjunction with Figure of description and preferred embodiment more complete
Face meticulously describes, but the protection scope of the present invention is not limited to the following specific embodiments.
Embodiment 1：
Referring to Fig. 1, a kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste includes the following steps：
1）Upper and lower chip is respectively washed to the oxide for totally removing surface, ensures surface cleaning, convenient for improving following step
2）The uniformity and adhesive force of middle coating, cleaning process are：First it is cleaned by ultrasonic with ethyl alcohol with after dilute hydrochloric acid；
2）Silver paste is coated in micro- copper post of upper chip, a diameter of 30um of micro- copper post, scaling powder is coated in lower chip
In micro- copper post, copper easily aoxidizes in air, when especially heating, therefore can completely cut off air by applying scaling powder, help
In removal oxide on surface；Silver paste used refers to dispersion micron-sized Argent grain in organic solvent, and the organic solvent is ether
Lipid organic solvent, a diameter of 1um of the Argent grain, silver content is not less than 82% in silver paste, since little particle has high surface
Can, there is the characteristic of self-assemble, Argent grain dispersion can guarantee that Argent grain coats uniformly on chip in organic solvent, this reality
Apply the silver paste used in example be Kunshan Hai Si electronics corporations production model be HS-TP-102；
3) upper and lower chip is fixed on by vacuum suction on ultrasonic head and pedestal respectively, and upper and lower chip is made to be aligned, then
Warm is carried out, warm is mainly used for removing the organic principle in silver paste, it may also be used for excites the activity of scaling powder；
4) 180 °C are preheating to, so that upper and lower chip is contacted, starts to be bonded, Athlete FA can be used in the present embodiment
The bonder of the model CB-600 of Corporation companies production is bonded, and starts gradually pressurization, the pressure of pressure process
For 35MPa, sintering temperature persistently rises, until temperature rise to 260 °C, should heated all upper and lower chip in the process；
Step 3）With step 4）In sintering temperature-rise period be to be heated by way of heat transfer in air, i.e. contact
Heating, namely ultrasonic head and pedestal are heated to heat upper and lower chip.
5) ultrasonic suction nozzle is adsorbed on upper chip and carries out ultrasonic vibration, in the horizontal direction, lower chip is with base for direction of vibration
Seat is fixed, and upper and lower chip carries out reciprocating friction movement in contact surface, and the time of ultrasonic vibration is 2s, and ultrasonic power is
70W；The vibration frequency of ultrasonic vibration is 38.5KHz, and Oscillation Amplitude is 0.3 μm, and above-mentioned data can be surveyed by laser-Doppler
Vibration Meter measures；
6）After heat-insulation pressure keeping 1.5min, stop ultrasonic vibration and heating, close vacuum, upper and lower chip with pedestal in air into
Row natural cooling, after the completion of cooling, the shear strength that upper and lower chip junction is measured using shearing test machine Dage4000 is not low
In 50MPa.
Embodiment 2：
Referring to Fig. 1, a kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste includes the following steps：
1）Upper and lower chip is respectively washed to the oxide for totally removing surface, ensures surface cleaning, convenient for improving following step
2）The uniformity and adhesive force of middle coating, cleaning process are：First it is cleaned by ultrasonic with ethyl alcohol with after dilute hydrochloric acid；
2）Silver paste is coated in micro- copper post of upper chip, a diameter of 50um of micro- copper post, scaling powder is coated in lower chip
In micro- copper post, copper easily aoxidizes in air, when especially heating, therefore can completely cut off air by applying scaling powder, help
In removal oxide on surface；Silver paste used refers to dispersion micron-sized Argent grain in organic solvent, and the organic solvent is ether
Lipid organic solvent, a diameter of 2um of the Argent grain, silver content is not less than 82% in silver paste, since little particle has high surface
Can, there is the characteristic of self-assemble, Argent grain dispersion can guarantee that Argent grain coats uniformly on chip in organic solvent, this reality
Apply the silver paste used in example be Kunshan Hai Si electronics corporations production model be HS-TP-102；
3) upper and lower chip is fixed on by vacuum suction on ultrasonic head and pedestal respectively, and upper and lower chip is made to be aligned, then
Warm is carried out, warm is mainly used for removing the organic principle in silver paste, it may also be used for excites the activity of scaling powder；
4) 200 °C are preheating to, so that upper and lower chip is contacted, starts to be bonded, Athlete FA can be used in the present embodiment
The bonder of the model CB-600 of Corporation companies production is bonded, and starts gradually pressurization, the pressure of pressure process
For 45MPa, sintering temperature persistently rises, until temperature rise to 300 °C, should heated all upper and lower chip in the process；
Step 3）With step 4）In sintering temperature-rise period be to be heated by way of heat transfer in air, i.e. contact
Heating, namely ultrasonic head and pedestal are heated to heat upper and lower chip.
5) ultrasonic suction nozzle is adsorbed on upper chip and carries out ultrasonic vibration, in the horizontal direction, lower chip is with base for direction of vibration
Seat is fixed, and upper and lower chip carries out reciprocating friction movement in contact surface, and the time of ultrasonic vibration is 1s, and ultrasonic power is
50W；The vibration frequency of ultrasonic vibration is 41.5KHz, and Oscillation Amplitude is 3.6 μm, and above-mentioned data can be surveyed by laser-Doppler
Vibration Meter measures；
6）After heat-insulation pressure keeping 3min, stop ultrasonic vibration and heating, close vacuum, upper and lower chip carries out in air with pedestal
Natural cooling, after the completion of cooling, the shear strength that upper and lower chip junction is measured using shearing test machine Dage4000 is not less than
50MPa。
Embodiment 3：
Referring to Fig. 1, a kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste includes the following steps：
1）Upper and lower chip is respectively washed to the oxide for totally removing surface, ensures surface cleaning, convenient for improving following step
2）The uniformity and adhesive force of middle coating, cleaning process are：First it is cleaned by ultrasonic with ethyl alcohol with after dilute hydrochloric acid；
2）Silver paste is coated in micro- copper post of upper chip, a diameter of 40um of micro- copper post, scaling powder is coated in lower chip
In micro- copper post, copper easily aoxidizes in air, when especially heating, therefore can completely cut off air by applying scaling powder, help
In removal oxide on surface；Silver paste used refers to dispersion micron-sized Argent grain in organic solvent, and the organic solvent is ether
Lipid organic solvent, a diameter of 1.5um of the Argent grain, silver content is not less than 82% in silver paste, since little particle has high table
Face energy, there is the characteristic of self-assemble, and Argent grain dispersion can guarantee that Argent grain coats uniformly on chip in organic solvent, this
Silver paste used in embodiment is that Kunshan Hai Si electronics corporations production model is HS-TP-102；
3) upper and lower chip is fixed on by vacuum suction on ultrasonic head and pedestal respectively, and upper and lower chip is made to be aligned, then
Warm is carried out, warm is mainly used for removing the organic principle in silver paste, it may also be used for excites the activity of scaling powder；
4) 190 °C are preheating to, so that upper and lower chip is contacted, starts to be bonded, Athlete FA can be used in the present embodiment
The bonder of the model CB-600 of Corporation companies production is bonded, and starts gradually pressurization, the pressure of pressure process
For 40MPa, sintering temperature persistently rises, until temperature rise to 280 °C, should heated all upper and lower chip in the process；
Step 3）With step 4）In sintering temperature-rise period be to be heated by way of heat transfer in air, i.e. contact
Heating, namely ultrasonic head and pedestal are heated to heat upper and lower chip.
5) ultrasonic suction nozzle is adsorbed on upper chip and carries out ultrasonic vibration, in the horizontal direction, lower chip is with base for direction of vibration
Seat is fixed, and upper and lower chip carries out reciprocating friction movement in contact surface, and the time of ultrasonic vibration is 1.5s, and ultrasonic power is
60W；The vibration frequency of ultrasonic vibration is 39KHz, and Oscillation Amplitude is 2 μm, and above-mentioned data can pass through laser doppler vibrometer
It measures；
6）After heat-insulation pressure keeping 1.5-3min, stop ultrasonic vibration and heating, close vacuum, upper and lower chip with pedestal in air
Natural cooling is carried out, after the completion of cooling, the shear strength of upper and lower chip junction is measured not using shearing test machine Dage4000
Less than 50MPa.
Claims (10)
1. a kind of method that micro- copper post interconnection is realized in ultrasonic wave added micron silver paste sintering, which is characterized in that include the following steps：
1）Upper and lower chip is respectively washed totally；
2）Silver paste is coated in micro- copper post of upper chip, scaling powder is coated in micro- copper post of lower chip；
3) upper and lower chip is fixed to by ultrasound absorption on ultrasonic suction nozzle and pedestal, then alignment carries out warm；
4) it is preheating to 180-200 °C, so that upper and lower chip is contacted, starts to be bonded, and start to pressurize；
5) ultrasonic suction nozzle is adsorbed on upper chip and carries out ultrasonic vibration, in the horizontal direction, lower chip is solid with pedestal for direction of vibration
Fixed motionless, the time of ultrasonic vibration is 1-2s, and sintering temperature persistently rises during this, until temperature rise is to 260-300 °C；
6）After heat-insulation pressure keeping 1.5-3min, stop ultrasonic vibration and heating, release vacuum suction, completes the chip of bonding with pedestal
It is cooling.
2. the method that micro- copper post interconnection is realized in ultrasonic wave added micron silver paste sintering according to claim 1, which is characterized in that
The step 1）In cleaning process be：First it is cleaned by ultrasonic with ethyl alcohol with after dilute hydrochloric acid, ensures the upper and lower chip after cleaning
Cleanliness factor it is higher.
3. the method that micro- copper post interconnection is realized in ultrasonic wave added micron silver paste sintering according to claim 1, which is characterized in that
The step 2）In silver paste used refer to dispersion micron-sized Argent grain in organic solvent, the organic solvent, which is ether lipid, to be had
Solvent, a diameter of 1-2um of the Argent grain, silver content is not less than 82% in silver paste.
4. the method that micro- copper post interconnection is realized in ultrasonic wave added micron silver paste sintering according to claim 1, which is characterized in that
The step 3）In upper and lower chip be fixed on ultrasonic head and pedestal by vacuum suction respectively.
5. the method that micro- copper post interconnection is realized in ultrasonic wave added micron silver paste sintering according to claim 1, which is characterized in that
The step 4）In pressure process pressure be 35-45MPa.
6. the method that micro- copper post interconnection is realized in ultrasonic wave added micron silver paste sintering according to claim 1, which is characterized in that
The step 5）The vibration frequency of middle ultrasonic vibration is 38.5-41.5KHz, and Oscillation Amplitude is 0.3-3.6 μm.
7. the method that micro- copper post interconnection is realized in the ultrasonic wave added micron silver paste sintering according to any one of claim 1-6,
It is characterized in that, the step 5）In ultrasonic power be 50-70W.
8. the method that micro- copper post interconnection is realized in the ultrasonic wave added micron silver paste sintering according to any one of claim 1-6,
It is characterized in that, the step 6）The shear strength of upper and lower chip junction is not less than 50MPa after the completion.
9. the method that micro- copper post interconnection is realized in the ultrasonic wave added micron silver paste sintering according to any one of claim 1-6,
It is characterized in that, the step 3）With step 4）In sintering temperature-rise period be to be added by way of heat transfer in air
Heat.
10. the method that micro- copper post interconnection is realized in the ultrasonic wave added micron silver paste sintering according to any one of claim 1-6,
It is characterized in that, the step 6）In cooling procedure be：Upper and lower chip carries out natural cooling in air with pedestal.
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| CN109148309A (en) * | 2018-09-03 | 2019-01-04 | 苏州通富超威半导体有限公司 | Encapsulating structure and forming method thereof |
| CN109545692A (en) * | 2018-11-22 | 2019-03-29 | 武汉新芯集成电路制造有限公司 | A method of reducing wafer bonding edge torsion resistance |
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| CN111627823A (en) * | 2020-05-13 | 2020-09-04 | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | Chip connection method for quickly generating high-strength and high-melting-point joint at low temperature |
| CN113410148A (en) * | 2021-05-26 | 2021-09-17 | 深圳市时代速信科技有限公司 | Welding method for chip packaging and chip packaging method |
| CN113410148B (en) * | 2021-05-26 | 2022-06-14 | 深圳市时代速信科技有限公司 | Welding method for chip packaging and chip packaging method |
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