CN109141473A - A kind of variable damping MEMS gyro sensitive structure test device - Google Patents
A kind of variable damping MEMS gyro sensitive structure test device Download PDFInfo
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- CN109141473A CN109141473A CN201810940691.1A CN201810940691A CN109141473A CN 109141473 A CN109141473 A CN 109141473A CN 201810940691 A CN201810940691 A CN 201810940691A CN 109141473 A CN109141473 A CN 109141473A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
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Abstract
The present invention discloses a kind of variable damping MEMS gyro sensitive structure test device, including vacuum cavity, is equipped with MCU module, signal source, data acquisition card, probe station and probe card in vacuum cavity；Probe station is for carrying MEMS gyro sensitive structure to be tested；Probe station bottom is equipped with heating cooling bench；Vacuum cavity is externally provided with microscope, probe station controller, host computer, evacuator, refrigeration machine and heating cooling controller；PC control evacuator vacuumizes vacuum cavity, changes the vacuum degree of vacuum cavity；Host computer is heated or cooled probe station by heating cooling controller control heating cooling bench；Make MEMS gyro sensitive structure to be tested while being in the environment of variable damping and alternating temperature, the test that the parameters such as driving frequency, sensitive frequency, resonance frequency, Q value are carried out to MEMS gyro sensitive structure, the influence according to two aspects of test result research air damping and thermal stress to MEMS gyro sensitive structure.
Description
Technical field
The present invention relates to microelectronics technology, specifically a kind of variable damping MEMS gyro sensitive structure test device.
Background technique
For MEMS device, inside be made of mostly MEMS sensitive structure and ASIC, movable sensitive structure is dynamic
Step response determines the basic performance of device, for example, MEMS gyro be exactly by the micro-displacement or deformation of internal sensitive structure come
Realize measurement function, and the dynamic parameters such as the resonance frequency of sensitive structure, Q value largely determine these devices
Energy.In addition, reliability and stability, MEMS gyro failure mode and failure mechanism etc. of the sensitive structure under different use environments
Critical issue can also be tested by the dynamic of MEMS gyro sensitive structure is reacted.
It is at this stage, general that there are two types of the modes of MEMS gyro sensitive structure dynamic test:
One, gyro sensitive structure test evaluation under different air damping environment,
When measuring air pressure drop to 1kPa or it is lower when, the air damping of sensitive structure will substantially reduce.Product at elevated pressures
Prime factor is not influenced substantially by air pressure.When air pressure declines (1 to 100Pa) to a certain extent, rarefied content is opened
Beginning plays an important role, and quality factor q starts to rise rapidly, and plays an important role in the damping of this region rarefied air, quality
The factor is inversely proportional with air pressure.
Under a high vacuum, air damping very little, it has to consider to pass through the internal friction and energy loss of structural support
Influence.If vacuum degree is sufficiently high, the quality factor of microthrust test will also become a constant, usually in 105 magnitudes.High vacuum
Under the conditions of, the quality factor specific value of MEMS gyro sensitive structure depends on the geometry designs of resonance structure.
Two, gyro sensitive structure test evaluation under high/low temperature stress condition,
There are certain structural failure and foozles in design, manufacturing process for MEMS gyro, and the variation of temperature can be into one
The error of the amplification gyro of step, so that MEMS gyro declines the anti-interference ability of environment.Sensibility of the MEMS gyro to temperature
It is mainly reflected in two aspects: being on the one hand determining error, determined by the temperature characterisitic of silicon materials；It on the other hand is to float at random
The error of shifting is caused by circuit temperature drift, encapsulating structure thermal stress etc..MEMS gyro key parameter is with temperature under research high and low temperature environment
The changing rule of degree be it is necessary, can be to improving stability of the MEMS device under high and low temperature environment and reliability provides
Necessary foundation.
Sensitive structure measuring technology is an important component of non-normal environment MEMS test, temperature under high and low temperature environment
The variations such as the caused silicon materials residual stress of degree variation, elasticity modulus, can cause the variation of rigidity, then and cause resonance frequency
Variation, finally results in the resonance frequency shifts of MEMS gyro sensitive structure.Temperature stress leads to the micro- of gyro internal structure
Small variation is difficult to find, can be evaluated by the test to temperature sensitive parameters such as resonance frequency, Q values by directly observation.It is brilliant
The high and low temperature test evaluation under circle grade is carried out aiming at deviation of the MEMS gyro sensitive structure under high/low temperature stress condition, is surveyed
The chuck of only carrying wafer changes temperature during examination, and the processing circuit and peripheral environment in probe card are in room temperature
Under environment, such test mode can exclude processing circuit (ASIC) and encapsulating package because temperature drift bring influence,
Test result actual response MEMS gyro sensitive structure with high/low temperature situation of change.
Currently, being all the test for carrying out above two mode to the gyro sensitive structure of wafer-level packaging, Bu Nengji
When find the problem, and air damping and high and low temperature environment test need to separate carry out, low efficiency.
Summary of the invention
The purpose of the present invention is to provide a kind of variable damping MEMS gyro sensitive structure test device, which can be to also
The MEMS gyro sensitive structure of non-wafer-level packaging carries out air variable damping simultaneously and high and low temperature environment is tested, in time discovery test
Problem provides feedback and reference for further optimization.
The technical solution adopted by the present invention to solve the technical problems is:
A kind of variable damping MEMS gyro sensitive structure test device, including vacuum cavity, vacuum cavity is interior to be equipped with MCU module, letter
Number source, data acquisition card, probe station and probe card, probe card and probe station mutually form cooperation；Probe station is to be measured for carrying
The MEMS gyro sensitive structure of examination；Probe station bottom is equipped with heating cooling bench, and heating cooling bench includes being bonded with probe station bottom
Hollow coldplate, hollow coldplate bottom is equipped with electric boiling plate, and the inner cavity of hollow coldplate is passed through refrigerant for recycling；
The vacuum cavity is externally provided with microscope, probe station controller, host computer, evacuator, refrigeration machine and the cooling control of heating
Device processed, microscope are used to be observed in test；
The MCU module and host computer communication connection, the output interface of MCU module is separately connected probe card and probe station controls
Device, probe station controller are connected with probe station, one end of signal source and data acquisition card is connected with host computer, the other end respectively with
Probe card is connected；
The evacuator is connected with vacuum cavity；The refrigeration machine is connected with the inner cavity of hollow coldplate, is used for hollow
The inner cavity circulation of coldplate is passed through refrigerant；Heating cooling controller is connected with refrigeration machine and electric boiling plate respectively；On described
Position machine is connected with evacuator and heating cooling controller respectively；
PC control evacuator vacuumizes vacuum cavity, changes the vacuum degree of vacuum cavity, makes MEMS top to be tested
Spiral shell sensitive structure is in the environment of variable damping；Host computer controls electric boiling plate and refrigeration by heating cooling controller respectively
Probe station is heated or cooled in machine, is in MEMS gyro sensitive structure to be tested in the environment of alternating temperature；PC control letter
Number source applies test signal to MEMS gyro sensitive structure to be tested by probe card, and passes through data acquisition card collecting test
Data.
The invention has the advantages that make MEMS gyro sensitive structure to be tested while being in the ring of variable damping and alternating temperature
Under border, the survey of the parameters such as driving frequency, sensitive frequency, resonance frequency, Q value is carried out to MEMS gyro sensitive structure in such circumstances
Examination, the influence according to two aspects of test result research air damping and thermal stress to MEMS gyro sensitive structure, is that front end is quick
The optimization for feeling structure provides test feedback, provides reference data for the design and ASIC joint debugging of the backoff algorithm of rear end.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples:
Fig. 1 is electrical principle block diagram of the invention；
Fig. 2 is test job flow chart of the present invention.
Specific embodiment
As shown in Figure 1, the present invention provides a kind of variable damping MEMS gyro sensitive structure test device, including vacuum cavity 1,
MCU module 2, signal source 3, data acquisition card 4, probe station 5 and probe card 6, probe card 6 and probe station 5 are equipped in vacuum cavity 1
Mutually form cooperation；Probe station 5 is for carrying MEMS gyro sensitive structure 7 to be tested；5 bottom of probe station is equipped with heating cooling
Platform, heating cooling bench includes the hollow coldplate 8 being bonded with 5 bottom of probe station, and hollow 8 bottom of coldplate is equipped with electric boiling plate 9,
The inner cavity of hollow coldplate 8 is passed through refrigerant for recycling.
The vacuum cavity 1 is externally provided with microscope 10, probe station controller 11, host computer 12, evacuator 13, refrigeration machine
14 are used to be observed in test with heating cooling controller 15, microscope 10.
The MCU module 2 and 12 communication connection of host computer, the output interface of MCU module 2 are separately connected probe card 6 and visit
Needle platform controller 11, probe station controller 11 is connected with probe station 5, one end of signal source 3 and data acquisition card 4 and host computer 12
It is connected, the other end is connected with probe card 6 respectively.
The evacuator 13 is connected with vacuum cavity 1；The refrigeration machine 14 is connected with the inner cavity of hollow coldplate 8,
For being passed through refrigerant to the inner cavity of hollow coldplate 8 circulation；Cooling controller 15 is heated to add with refrigeration machine 14 and electricity respectively
Hot plate 9 is connected；The host computer 12 is connected with evacuator 13 and heating cooling controller 15 respectively.
Host computer 12 controls evacuator 13 and vacuumizes to vacuum cavity 1, changes the vacuum degree of vacuum cavity 1, makes to be measured
The MEMS gyro sensitive structure 7 of examination is in the environment of variable damping；Host computer 12 is controlled respectively by heating cooling controller 15
Electric boiling plate 9 and refrigeration machine 14, are heated or cooled probe station 5, MEMS gyro sensitive structure 7 to be tested are made to be in alternating temperature
Under environment；Host computer 12 controls signal source 3 and applies test signal to MEMS gyro sensitive structure 7 to be tested by probe card 6,
And pass through 4 collecting test data of data acquisition card.
As shown in connection with fig. 2, in order to make it easy to understand, the present embodiment be specifically described in a flowchart it is of the invention worked
Journey.Test device is initialized first, completes the communication of modules component, and then host computer 12 uses Labview platform,
Instruction is issued respectively to evacuator 13 and heating cooling controller 15 by RS232 interface, completes the vacuum degree of vacuum cavity 1
Setting and the temperature of probe station 5 is set, when vacuum degree and temperature reach sets requirement, host computer 12 is to MCU module 2
Issue instruction, be sequentially completed test device initialization, probe contact, subsequent host computer 12 by USB interface realize signal source 3 and
The programmable function of data acquisition card 4, while MCU module 2 controls probe card and test signal is made to be applied to tested wafer, signal acquisition
Block the analog signal in 4 acquisition testing circuits, and transfer data to host computer 12, final drive is completed by Labview platform
The parameters such as dynamic frequency, sensitive frequency, Q value calculate and the display of test result.
Host computer issues " qualification " to MCU module according to the acceptable criterion of setting or " unqualified " instruction, MCU module pass through
TTL is issued to probe station and is instructed, and command signal is made of " classification ", " completion " two parts, and test passes then execute " completion " and refer to
It enables, and issues test commencing signal to MCU module, carry out the test of next wafer, circuit sequentially and tested, until MCU
Module receives " test terminates " signal.
The above described is only a preferred embodiment of the present invention, being not intended to limit the present invention in any form；Appoint
What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above
Method and technology contents make many possible changes and modifications to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations
Apply example.Therefore, anything that does not depart from the technical scheme of the invention according to the technical essence of the invention do above embodiments
Any simple modification, equivalent replacement, equivalence changes and modification, all of which are still within the scope of protection of the technical scheme of the invention.
Claims (1)
1. a kind of variable damping MEMS gyro sensitive structure test device, which is characterized in that including vacuum cavity, set in vacuum cavity
There are MCU module, signal source, data acquisition card, probe station and probe card, probe card and probe station mutually form cooperation；Probe station
For carrying MEMS gyro sensitive structure to be tested；Probe station bottom is equipped with heating cooling bench, and heating cooling bench includes and spy
The hollow coldplate of needle platform bottom fitting, hollow coldplate bottom are equipped with electric boiling plate, and the inner cavity of hollow coldplate is for recycling
It is passed through refrigerant；
The vacuum cavity is externally provided with microscope, probe station controller, host computer, evacuator, refrigeration machine and the cooling control of heating
Device processed, microscope are used to be observed in test；
The MCU module and host computer communication connection, the output interface of MCU module is separately connected probe card and probe station controls
Device, probe station controller are connected with probe station, one end of signal source and data acquisition card is connected with host computer, the other end respectively with
Probe card is connected；
The evacuator is connected with vacuum cavity；The refrigeration machine is connected with the inner cavity of hollow coldplate, is used for hollow
The inner cavity circulation of coldplate is passed through refrigerant；Heating cooling controller is connected with refrigeration machine and electric boiling plate respectively；On described
Position machine is connected with evacuator and heating cooling controller respectively；
PC control evacuator vacuumizes vacuum cavity, changes the vacuum degree of vacuum cavity, makes MEMS top to be tested
Spiral shell sensitive structure is in the environment of variable damping；Host computer controls electric boiling plate and refrigeration by heating cooling controller respectively
Probe station is heated or cooled in machine, is in MEMS gyro sensitive structure to be tested in the environment of alternating temperature；PC control letter
Number source applies test signal to MEMS gyro sensitive structure to be tested by probe card, and passes through data acquisition card collecting test
Data.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810940691.1A CN109141473B (en) | 2018-08-17 | 2018-08-17 | Variable damping MEMS gyro sensitive structure testing device |
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| CN201810940691.1A CN109141473B (en) | 2018-08-17 | 2018-08-17 | Variable damping MEMS gyro sensitive structure testing device |
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| CN109141473A true CN109141473A (en) | 2019-01-04 |
| CN109141473B CN109141473B (en) | 2022-09-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112269116A (en) * | 2020-09-25 | 2021-01-26 | 华东光电集成器件研究所 | Method for testing vacuum packaging performance of integrated circuit tube shell level |
| CN115479614A (en) * | 2022-09-01 | 2022-12-16 | 北京晨晶电子有限公司 | Testing device, system and method of micro-mechanical sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112269116A (en) * | 2020-09-25 | 2021-01-26 | 华东光电集成器件研究所 | Method for testing vacuum packaging performance of integrated circuit tube shell level |
| CN115479614A (en) * | 2022-09-01 | 2022-12-16 | 北京晨晶电子有限公司 | Testing device, system and method of micro-mechanical sensor |
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Address after: No. 2016, Tanghe Road, economic development zone, Bengbu City, Anhui Province 233000 Patentee after: Anhui North Microelectronics Research Institute Group Co.,Ltd. Address before: No. 2016, Tanghe Road, economic development zone, Bengbu City, Anhui Province 233000 Patentee before: NORTH ELECTRON RESEARCH INSTITUTE ANHUI Co.,Ltd. |