CN112269116A - Method for testing vacuum packaging performance of integrated circuit tube shell level - Google Patents
Method for testing vacuum packaging performance of integrated circuit tube shell level Download PDFInfo
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- CN112269116A CN112269116A CN202011026830.3A CN202011026830A CN112269116A CN 112269116 A CN112269116 A CN 112269116A CN 202011026830 A CN202011026830 A CN 202011026830A CN 112269116 A CN112269116 A CN 112269116A
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Abstract
The invention discloses a method for testing the vacuum packaging performance of an integrated circuit tube shell level, which comprises the following steps: s1, initially testing the MEMS gyroscope microstructure chip, S2, adhering the MEMS gyroscope microstructure chip, S3, bonding the MEMS gyroscope microstructure chip by leads, S4, testing the MEMS gyroscope microstructure chip for the second time, S5, performing laser drilling on the MEMS gyroscope microstructure chip, S6, calibrating a corresponding curve of the vacuum degree and the Q value of the MEMS gyroscope microstructure chip, S7, performing tube-shell vacuum packaging, S8, testing the MEMS gyroscope microstructure chip for the third time, and S9, searching the vacuum degree corresponding to the Q value of the step S8 according to the corresponding curve calibrated in the step S6, wherein the vacuum degree is the vacuum degree of the tube-shell packaging; the method can evaluate the internal vacuum degree after the tube-shell level packaging, thereby verifying the actual vacuum degree in the product produced and processed by packaging or similar equipment.
Description
Technical Field
The invention relates to the technical field of vacuum packaging of integrated circuits, in particular to a method for testing the vacuum packaging performance of an integrated circuit tube shell level.
Background
At present, many MEMS, EMCCD and some devices with certain requirements on external environment need tube-shell-level closed packaging or even vacuum packaging so as to ensure the stable working state of the devices. According to the prior art, the tightness and the vacuum degree of the pipe shell are guaranteed to be the capacity of the mining and communication equipment, for example, the capacity of the vacuum parallel seam welding equipment can reach 10-3Pa, the internal vacuum degree of the product manufactured by the equipment is default to 10-3Pa, and the vacuum degree inside the actual product is not the nominal value of the device, and cannot be obtained through testing, and in the prior art, the actual vacuum degree inside the tube shell stage cannot be accurately detected by a vacuum degree detection mode. How to detect the actual vacuum environment at the tube shell level is a difficult problem, and no effective solution is provided at present aiming at the problems.
Micro-electromechanical Systems (MEMS) gyro microstructures are devices that operate in environments with high vacuum degrees, and a vacuum chamber can be formed by a Wafer Bonding (Wafer Bonding) technique at present.
In the aspect of evaluating MEMS vacuum packaging performance, the method for evaluating MEMS vacuum packaging performance (application publication number: CN110702332A) is designed to evaluate the wafer level packaging vacuum degree, and can not test the internal vacuum degree of a common integrated circuit tube shell level. In addition, vacuum degree test is carried out in the wafer manufacturing process, however, in the actual processing process, the Q value of the device is changed after package at the tube package level, so the method has no guiding significance in the actual operation process.
The method for detecting the vacuum degree in the accelerometer through the servo circuit frequency sweep (application publication number: CN107748274A) is similar to the method of the last found patent, and is characterized in that the vacuum degree of a product is tested before the wafer-level packaging of the MEMS accelerometer, then the vacuum degree of the product after the wafer-level packaging is calibrated, and the packaging has more obvious influence on relevant parameters of the accelerometer, so that the scheme is only described as some performances of the packaged product in the actual operation process.
Disclosure of Invention
The invention aims to provide a method for testing the vacuum packaging performance of an integrated circuit tube shell level, which can evaluate the internal vacuum degree after tube shell level packaging so as to verify the actual vacuum degree in a product produced and processed by packaging or similar equipment.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a method for testing the vacuum packaging performance of an integrated circuit tube shell level comprises the following steps:
s1, initially testing the MEMS gyroscope microstructure chip,
testing the leakage current, the basic capacitance, the driving frequency, the driving Q value, the sensitive frequency and the sensitive Q value of the MEMS gyroscope microstructure chip to determine that the performance of the MEMS gyroscope microstructure chip meets the requirements;
s2, adhering the MEMS gyroscope microstructure chip,
selecting an MEMS gyroscope microstructure chip qualified through testing, and bonding the MEMS gyroscope microstructure chip in the tube shell;
s3, bonding the MEMS gyroscope microstructure chip by leads,
correspondingly bonding a PAD point of the MEMS gyroscope microstructure chip with a tube shell pin;
s4, testing the MEMS gyroscope microstructure chip for the second time,
carrying out secondary test on the MEMS gyroscope microstructure chip in the tube shell without the cover plate, wherein the test parameters comprise leakage current, basic capacitance, driving frequency, driving Q value, sensitive frequency and sensitive Q value, and the performance of the MEMS gyroscope microstructure chip is determined to meet the requirements;
s5, laser drilling of the MEMS gyroscope microstructure chip,
perforating an upper cover plate of the MEMS gyroscope microstructure chip by using a laser scribing machine to enable a middle structure cavity of the MEMS gyroscope microstructure chip to be communicated with an external atmospheric environment;
s6, calibrating the corresponding curve of the vacuum degree and the Q value of the MEMS gyroscope microstructure chip,
placing the MEMS gyroscope microstructure chip with the punched hole into a vacuum device with adjustable vacuum degree, testing the Q value of the MEMS gyroscope microstructure chip under different vacuum degree conditions, and describing a corresponding curve of the vacuum degree and the Q value;
s7, carrying out tube-shell level vacuum packaging,
carrying out tube-shell-level vacuum packaging on the MEMS gyroscope microstructure chip with the through hole;
s8, testing the MEMS gyroscope microstructure chip for the third time,
carrying out a third test on the MEMS gyroscope microstructure chip subjected to the tube-shell-level vacuum packaging, wherein the test parameters comprise leakage current, basic capacitance, driving frequency, driving Q value, sensitive frequency and sensitive Q value, and the vacuum degree of the cavity in the MEMS gyroscope microstructure chip is the vacuum degree in the tube-shell-level packaging;
s9, searching the vacuum degree value corresponding to the package-in-package,
and searching the vacuum degree corresponding to the Q value of the step S8 according to the corresponding curve calibrated in the step S6, wherein the vacuum degree is the vacuum degree of the tube-package-level package.
Further, the hole punching aperture of step S5 is 200 μm, and the punching parameters of the laser dicing saw: the speed is 200 mu m/s, the first 300 mu m is finished within 5 seconds, each stepping is 100 mu m, silicon chips on the surface are blown off after the finishing, each stepping is 10 mu m after 300 mu m, and the stepping is 2 mu m each time after the back of the MEMS gyroscope microstructure is observed by a body type microscope to be transparent until the upper cover plate is penetrated.
The invention has the beneficial effects that under different vacuum degrees, the Q values of the MEMS gyroscope microstructure chips in the tube-shell-level packaging cavity are obviously different, so that by utilizing the characteristic of the MEMS gyroscope microstructure chips, the wafer-level chips are split to form small chip adhesive sheets to the tube shell, then the cavity of the MEMS gyroscope microstructure chips can be punched by adopting a laser punching technology, the corresponding curve of the vacuum degree and the MEMS gyroscope microstructure chips is calibrated under the environment with adjustable vacuum degree, then vacuum packaging is carried out, finally the Q value is tested, and the vacuum degree value corresponding to the tube-shell-level packaging is searched according to the calibrated curve; the method can evaluate the vacuum degree inside the integrated circuit tube-shell level package, thereby verifying the actual vacuum degree inside the product produced and processed by the package or similar equipment, and having strong practicability.
Drawings
The invention is further illustrated with reference to the following figures and examples:
FIG. 1 is a schematic view of the present invention;
FIG. 2 is a schematic flow diagram of the present invention;
FIG. 3 is a schematic diagram of a corresponding curve of the driving Q value and the vacuum degree of the MEMS gyroscope microstructure chip;
FIG. 4 is a diagram of a corresponding curve of the sensitive Q value and the vacuum degree of the MEMS gyroscope microstructure chip.
Detailed Description
The invention provides a method for testing the vacuum packaging performance of an integrated circuit tube shell level, which comprises the following steps:
s1, initially testing the MEMS gyroscope microstructure chip,
testing the leakage current, the basic capacitance, the driving frequency, the driving Q value, the sensitive frequency and the sensitive Q value of the MEMS gyroscope microstructure chip to determine that the performance of the MEMS gyroscope microstructure chip meets the requirements;
for the measurement of the Q value, there are generally divided into a half-power bandwidth method (-3dB bandwidth method) and a time measurement method. The half-power bandwidth method is to calculate the Q value according to the-3 dB bandwidth and the resonant frequency of the amplitude-frequency characteristic curve, and to use a dynamic signal analyzer and a network analyzer to perform frequency response test to obtain the amplitude-phase characteristic curve of the silicon micro gyroscope, or to use the electrostatic excitation and harmonic detection of a phase-locked amplifier to eliminate electrical coupling to obtain the amplitude-phase characteristic curve of the silicon micro gyroscope. The-3 dB bandwidth is then obtained from the amplitude-frequency response curve. The quality factor is equal to the resonant frequency divided by-3 dB bandwidth; however, when the Q value is very high (the order of magnitude is over 10 ten thousand), it is difficult to accurately measure the quality factor of the system by using the method of measuring the frequency response curve (-3dB value) of the second order system in an open-loop manner, because when the Q value is very high, the system is difficult to stably oscillate at its natural frequency point in an open-loop driving manner, and the peak frequency value obtained by open-loop measurement will change with the measurement environment and the measurement conditions (temperature, vibration amplitude, etc.), and the accuracy and repeatability of the measured natural frequency value are poor. Although the use of a spectrometer for measuring the Q value has been widely used in the electronic field, the frequency resolution of the spectrometer limits the accuracy of the Q value measurement of the high vacuum package MEMS gyroscope. Therefore, the Q value of the MEMS capacitive gyroscope microstructure is tested by using a time attenuation method, the corresponding resonance frequency is set through the driving loop, the microstructure resonates and generates enough initial displacement, then the excitation source is turned off, the amplitude attenuation is detected to calibrate the Q value, the unreliability generated by the initial displacement signal is avoided, and the Q value measurement of the driving and sensitive dual-mode of the silicon micro gyroscope can be quickly and effectively realized;
the MEMS gyroscope can be simplified into a second-order spring-mass-damping system in the driving axial direction and the sensitive axial direction, and the mechanical model of the MEMS gyroscope can be expressed as
Wherein x is displacement, m is equivalent mass, c is equivalent damping coefficient, k is equivalent stiffness, F is external force amplitude applied on the mass block, omega is frequency value of the external force, and t is time. The solution of the second order differential equation is composed of two parts, one part is a complementary function, namely the general solution of the homogeneous equation; the other part is special integral, namely special solution of an equation;
since the frequency of the particular solution of the equation is the same as the excitation frequency, the particular solution can be set to x0＝X0sin(ωt+φ0) The specific solution of the equation can be solved as
Wherein
In order to achieve a damping ratio,
is the natural angular frequency. The solution is a steady state solution of equation (1), namely a vibration displacement function of the MEMS gyroscope during normal operation;
the remainder of the second order differential equation, i.e., the general solution of the homogeneous equation, can be expressed as x-estSubstituting into homogeneous equation (ms)2+cs+k)e st0 is got
The general solution of the second order differential equation (1) can be expressed as
Wherein X1And phi1Determined by initial conditions; the general solution of the second order equation (zero input response) is known to be an exponential decay in amplitude over time with a frequency of
Is calculated as a sine function of (c). The speed of amplitude attenuation depends only on the system damping ratio xi and the natural frequency omegan(ii) a When the Q value is large, i.e., xi<<When 1, formula (5) can be approximately represented as
Thus, a full solution of the second order differential equation can be expressed as
If a short-time initial energy is provided for the second-order system, at a certain timeMoment t0When the input driving force is suddenly removed, the mass block of the second-order system instantly converts the forced vibration driven by the external force into free vibration under the action of the spring and the damping. The vibration amplitude of the free vibration is damped over time due to the damping of the system. The larger the system damping, the faster the damping, and the smaller the system damping, the slower the damping. The displacement function of the damped vibration is equation (5), where X1Determined by the initial energy of the system, [ phi ]1From time t0And initial vibration state determination;
for general exponential decay signals
The time constant of which can be expressed as
Therefore, the equivalent Q value of the system can be calculated according to the formula (5)
From the equation (8), it can be seen that the amplitude decay time constant τ of the free vibration of the second order system is knownnAnd system natural frequency fnThe Q value can be calculated. Amplitude decay time constant τnThe amplitude value data of the sinusoidal signal can be taken out and then subjected to exponential fitting to obtain the sinusoidal signal. The system inherent frequency value can be obtained by measuring the frequency spectrum of the attenuation sinusoidal signal;
s2, referring to fig. 1 and fig. 2, the MEMS gyroscope microstructure chip bonding sheet,
selecting an MEMS gyroscope microstructure chip 1 qualified through testing, and bonding the MEMS gyroscope microstructure chip 1 in a tube shell 2; the tube shell of the embodiment adopts LCC32, and the bonding glue 3 adopts JM7000 conductive silver adhesive;
s3, bonding the MEMS gyroscope microstructure chip by leads,
correspondingly bonding a PAD point of the MEMS gyroscope microstructure chip with a tube shell pin; the bonding wire is a gold wire with the diameter of 20 mu m;
s4, testing the MEMS gyroscope microstructure chip for the second time,
carrying out secondary test on the MEMS gyroscope microstructure chip in the tube shell without the cover plate, wherein the test parameters comprise leakage current, basic capacitance, driving frequency, driving Q value, sensitive frequency and sensitive Q value, and the performance of the MEMS gyroscope microstructure chip is determined to meet the requirements;
s5, laser drilling of the MEMS gyroscope microstructure chip,
perforating an upper cover plate 4 of the MEMS gyroscope microstructure chip by using a laser scribing machine to enable a middle structure cavity of the MEMS gyroscope microstructure chip to be communicated with an external atmospheric environment;
perforating an upper cover plate of the MEMS gyroscope microstructure chip by using a laser scribing machine, ensuring that the depth of a round hole 5 is exactly consistent with the thickness of the upper cover plate, not only ensuring that scribed silicon chips are not injected into a middle microstructure layer, but also realizing that a middle structure cavity of the MEMS gyroscope microstructure chip is communicated with the external atmospheric environment;
laser tapping technological parameters are as follows: the depth of the opening is 380 mu m +/-5 mu m
Speed: 0.2 mm/sec
Feeding distance: 50 μm/time (first 6 times)
Feeding distance: 10 μm/time (7 th to 12 th times)
Feeding distance: 3 μm/time (starting from 13 times)
Current: 32.5A
Power: 2.5W
Aperture: circular, diameter 0.18mm
S6, combining the graphs shown in FIGS. 3 and 4, calibrating the corresponding curve of the vacuum degree and the Q value of the MEMS gyroscope microstructure chip,
placing the MEMS gyroscope microstructure chip with the punched hole into a vacuum device with adjustable vacuum degree, testing the Q value of the MEMS gyroscope microstructure chip under different vacuum degree conditions, and describing a corresponding curve of the vacuum degree and the Q value;
theoretical research proves that the MEMS gyroscope microstructure is 10-1Vacuum above mbar is not very sensitive, so 10 is depicted with emphasis-1A relation curve of vacuum degree below mbar and Q value; the step selection is shown in Table 1, each vacuum point is stable for 30 minutesTesting after a clock, namely testing the Q values of 1 to 26 vacuum degree points in a forward direction, then testing the Q values of 26 to 1 vacuum degree points in a reverse direction, and drawing a curve according to all data points in the forward direction and the reverse direction;
| serial number | Degree of vacuum | Serial number | Degree of vacuum | Serial number | Degree of vacuum |
| 1 | |
2 | |
3 | 5×10-1 |
| 4 | 9×10-2 |
5 | 6×10-2 |
6 | 3×10-2mbar |
| 7 | 1×10-2mbar | 8 | 9×10-3mbar | 9 | 7×10-3mbar |
| 10 | 5×10-3mbar | 11 | 3×10-3mbar | 12 | 1×10-3mbar |
| 13 | 9×10-4mbar | 14 | 8×10-4mbar | 15 | 7×10-4mbar |
| 16 | 6×10-4mbar | 17 | 5×10-4mbar | 18 | 4×10-4mbar |
| 19 | 3×10-4mbar | 20 | 2×10-4mbar | 21 | 1×10-4mbar |
| 22 | 9×10-5mbar | 23 | 8×10-5mbar | 24 | 7×10-5mbar |
| 25 | 6×10-5mbar | 26 | 5×10-5mbar | 27 | ........ |
TABLE 1
The corresponding relation between the driving Q value and the vacuum degree of the MEMS gyroscope microstructure chip is shown in a table 2:
the corresponding relation between the sensitive Q value and the vacuum degree of the MEMS gyroscope microstructure chip is shown in a table 3:
s7, carrying out tube-shell level vacuum packaging,
performing tube-shell-level vacuum packaging on the MEMS gyroscope microstructure chip with the through hole through the cover plate 6; because the bonding process of the bonding sheet is completed, only the airtight sealing cover is needed to be carried out under the vacuum environment set by the equipment;
s8, testing the MEMS gyroscope microstructure chip for the third time,
carrying out a third test on the MEMS gyroscope microstructure chip subjected to the tube-shell-level vacuum packaging, wherein the test parameters comprise leakage current, basic capacitance, driving frequency, driving Q value, sensitive frequency and sensitive Q value, and the vacuum degree of the cavity in the MEMS gyroscope microstructure chip is the vacuum degree in the tube-shell-level packaging;
s9, searching the vacuum degree value corresponding to the package-in-package,
and searching the vacuum degree corresponding to the Q value of the step S8 according to the corresponding curve calibrated in the step S6, wherein the vacuum degree is the vacuum degree of the tube-package-level package.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention.
Claims (2)
1. A method for testing the vacuum packaging performance of an integrated circuit tube shell level is characterized by comprising the following steps:
s1, initially testing the MEMS gyroscope microstructure chip,
testing the leakage current, the basic capacitance, the driving frequency, the driving Q value, the sensitive frequency and the sensitive Q value of the MEMS gyroscope microstructure chip to determine that the performance of the MEMS gyroscope microstructure chip meets the requirements;
s2, adhering the MEMS gyroscope microstructure chip,
selecting an MEMS gyroscope microstructure chip qualified through testing, and bonding the MEMS gyroscope microstructure chip in the tube shell;
s3, bonding the MEMS gyroscope microstructure chip by leads,
correspondingly bonding a PAD point of the MEMS gyroscope microstructure chip with a tube shell pin;
s4, testing the MEMS gyroscope microstructure chip for the second time,
carrying out secondary test on the MEMS gyroscope microstructure chip in the tube shell without the cover plate, wherein the test parameters comprise leakage current, basic capacitance, driving frequency, driving Q value, sensitive frequency and sensitive Q value, and the performance of the MEMS gyroscope microstructure chip is determined to meet the requirements;
s5, laser drilling of the MEMS gyroscope microstructure chip,
perforating an upper cover plate of the MEMS gyroscope microstructure chip by using a laser scribing machine to enable a middle structure cavity of the MEMS gyroscope microstructure chip to be communicated with an external atmospheric environment;
s6, calibrating the corresponding curve of the vacuum degree and the Q value of the MEMS gyroscope microstructure chip,
placing the MEMS gyroscope microstructure chip with the punched hole into a vacuum device with adjustable vacuum degree, testing the Q value of the MEMS gyroscope microstructure chip under different vacuum degree conditions, and describing a corresponding curve of the vacuum degree and the Q value;
s7, carrying out tube-shell level vacuum packaging,
carrying out tube-shell-level vacuum packaging on the MEMS gyroscope microstructure chip with the through hole;
s8, testing the MEMS gyroscope microstructure chip for the third time,
carrying out a third test on the MEMS gyroscope microstructure chip subjected to the tube-shell-level vacuum packaging, wherein the test parameters comprise leakage current, basic capacitance, driving frequency, driving Q value, sensitive frequency and sensitive Q value, and the vacuum degree of the cavity in the MEMS gyroscope microstructure chip is the vacuum degree in the tube-shell-level packaging;
s9, searching the vacuum degree value corresponding to the package-in-package,
and searching the vacuum degree corresponding to the Q value of the step S8 according to the corresponding curve calibrated in the step S6, wherein the vacuum degree is the vacuum degree of the tube-package-level package.
2. The method for testing the vacuum package performance at the package level of the integrated circuit as recited in claim 1, wherein the hole punching aperture of the step S5 is 200 μm, and the punching parameters of the laser dicing saw are as follows: the speed is 200 mu m/s, the first 300 mu m is finished within 5 seconds, each stepping is 100 mu m, silicon chips on the surface are blown off after the finishing, each stepping is 10 mu m after 300 mu m, and the stepping is 2 mu m each time after the back of the MEMS gyroscope microstructure is observed by a body type microscope to be transparent until the upper cover plate is penetrated.
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| CN116484547A (en) * | 2023-05-09 | 2023-07-25 | 广东工业大学 | Vacuum packaging MEMS gyroscope air leakage analysis method, system, medium and computer |
| CN116652787A (en) * | 2023-07-31 | 2023-08-29 | 沈阳和研科技股份有限公司 | Grinding wheel scribing machine |
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