CN105699424B - A kind of measuring method of MEMS device residual stress temperature characterisitic - Google Patents

Abstract

The invention discloses a method for measuring the residual stress temperature characteristics of a MEMS device, which integrates the mechanical structure of the MEMS device and a double-end fixed-branched tuning fork resonator on the same chip, and utilizes the frequency of the double-ended fixed-branched tuning fork resonator and the The axial stress is correlated, and the residual stress at different temperatures is obtained by testing the frequency of the double-ended fixed-branched tuning fork resonator at different temperatures, so as to obtain the temperature characteristics of the residual stress. The test method of the present invention is simple, and can realize the measurement of the residual stress temperature characteristic produced by the MEMS process; can realize the measurement of the residual stress temperature characteristic produced by each packaging process; Will not cause damage to MEMS devices.

Description

A Measuring Method for Residual Stress-Temperature Characteristics of MEMS Devices

technical field

The invention belongs to the residual stress testing technology of MEMS devices, in particular to a method for measuring the residual stress temperature characteristics of MEMS devices.

Background technique

The mechanical structure of the MEMS (Micro-Electro-Mechanical-System, micro-electro-mechanical system) device (which is a sensitive element) will generate residual stress during the process of processing and packaging, and the residual stress includes processing stress and packaging stress. The residual stress will affect the output signal of the MEMS device, especially when the residual stress changes, such as the change of the residual stress with the temperature or the creep of the stress, it will be reflected on the output signal in the form of an electrical signal through the mechanical structure, so that the MEMS device The output of the device is shifted, which reduces the performance of the MEMS device. Therefore, residual stress control and temperature characteristics of residual stress are one of the factors that must be considered in the processing and packaging of MEMS devices. Before stress control, the temperature characteristics of residual stress (including temperature characteristics of processing stress and temperature characteristics of packaging stress.) must be accurately measured.

At present, the residual stress measurement of MEMS devices usually uses optical equipment to test the warpage of the chip, such as Moire Interference Method, laser holographic interferometry and laser speckle interferometry, etc., and then estimates the residual stress according to the warpage ( (1) Ma Bin, Ren Jiwen, Zhang Honghai, etc. Experimental Research on Residual Stress Detection of Bonding Adhesive in Bonding Technology. Mechanical Science and Technology, 2005,24(6):736-739.(2) Qiu Yu, Lei Zhenkun , Kang Yilan et al. Micro-Raman spectroscopy and its application in microstructure residual stress detection, Mechanical Strength, 2004, 26(4):389-392.). Firstly, this test method requires expensive optical equipment; secondly, the overall stress level of the wafer can be obtained through this method, and the local stress distribution cannot be obtained; thirdly, a single MEMS chip is obtained by dicing the wafer. The size is on the order of millimeters. Compared with the wafer, the bending deflection of the MEMS chip is greatly reduced. At this time, there is a large measurement error when using the optical method to measure the residual stress, and even when the bending deflection is approximately zero, it cannot be obtained. Stress measurement results; Fourth, when the packaged MEMS device needs to measure the residual stress, the package structure must be disassembled, which destroys the package structure and easily causes damage to the MEMS structure, thereby affecting the correct measurement of the residual stress. The above-mentioned technical problems also exist in the measurement of residual stress temperature characteristics, and the required testing equipment is more complicated.

Contents of the invention

Aiming at the defects of the prior art, the purpose of the present invention is to provide a convenient, high-sensitivity, and high-precision measurement method for the residual stress-temperature characteristics of MEMS devices.

The technical solution that realizes the object of the present invention is: a kind of measuring method of residual stress temperature characteristic of MEMS device, and the steps are as follows:

Step 1: Integrate the double-end fixed-branched tuning fork resonator and the mechanical structure together to form a MEMS chip. In each MEMS chip, at least four double-ended fixed-branched tuning fork resonators are evenly arranged around the mechanical structure and arranged symmetrically. Two double-ended fixed support tuning fork resonators are arranged perpendicular to each other;

Step 2: After the micromachining process is completed, hundreds of MEMS chips are formed on the wafer, the wafer is installed on a temperature-controlled probe station, and multiple MEMS chips are selected from different areas on the wafer for testing: Firstly, through a scanning electron microscope, test the beam width and beam length of the double-terminal fixed-branched tuning fork resonator on the selected MEMS chip; The circuits are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the frequency of the double-terminal fixed-branched tuning fork resonator at different temperatures is tested by using the probe, measurement and control circuit and frequency measurement circuit. f _0,k,i (T), put f _0,k,i (T) into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ

In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip; i=1,2,...,m, m≥4, i represents the resonance of the double-ended fixed-branched tuning fork on the same MEMS chip The label of the device; E is the Young's modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the double-end fixed-branched tuning fork resonator, and M is the double-ended fixed-branched tuning fork resonator equivalent mass;

Step 3: Separating the MEMS chip on the wafer by dicing process to obtain a single MEMS chip, installing the diced MEMS chip on the temperature-controlled probe station, adjusting the temperature of the temperature-controlled probe station, using probes, The measurement and control circuit and the frequency measurement circuit test the frequency f _1,k,i (T) of these double-ended fixed-supported tuning fork resonators at different temperatures, and substitute f _1,k,i (T) into the formula Calculate the value σ _1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _1,k,i (T) and temperature T, and obtain σ _1,k,i (T) as a function of temperature:

σ _1,k,i (T)=σ _1,k,i (0)+a _1,1 T+a _1,2 T ² +…+a _1,n T ⁿ

In the formula, σ _1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a _1,1 , a _1,2 , and a _1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients;

Step 4: Bond the MEMS chip obtained in Step 3 into the shell by using the SMT process, install the MEMS chip after the patch on the temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control The circuit and the frequency measurement circuit test the frequency f _2,k,i (T) of these double-ended fixed-branched tuning fork resonators at different temperatures, and substitute f _2,k,i (T) into the formula Calculate the value σ _2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _2,k,i (T) and temperature T, and get σ _2,k,i (T) as a function of temperature:

σ _2,k,i (T)=σ _2,k,i (0)+a _2,1 T+a _2,2 T ² +…+a _2,n T ⁿ

In the formula, σ _2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a _2,1 , a _2,2 , and a _2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order and n-order temperature coefficients;

Step 5: Using the wire bonding process, using metal leads to realize the electrical interconnection between the MEMS chip and the shell, using a stress-free installation method to install and fix the shell, and using gold wire to weld the metal pins on the shell and the measurement and control circuit On the corresponding metal pins, install the wire-bonded MEMS chip on the fixture, fix the fixture in the temperature control box, use the measurement and control circuit and the frequency measurement circuit to test the double-end fixed support tuning fork resonator after the wire bonding process Frequency f _3,k,i (T), substitute f _3,k,i (T) into the formula Calculate the value σ _3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _3,k,i (T) and temperature T, Obtain the temperature function of σ _3,k,i (T):

σ _3,k,i (T)=σ _3,k,i (0)+a _3,1 T+a _3,2 T ² +…+a _3,n T ⁿ

In the formula, σ _3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a _3,1 , a _3,2 , and a _3,n are the residual stresses generated by the wire bonding process, respectively The first-order, second-order and n-order temperature coefficients of stress;

Step 6: Use the capping process to bond the cover plate and the tube shell together, install and fix the tube shell in a stress-free installation method, and use gold wire to weld the metal pins on the tube shell and the corresponding metal pins on the measurement and control circuit , install the capped MEMS chip in the temperature control box, change the temperature in the temperature control box, use the double-terminal fixed-supported resonator measurement and control circuit and frequency measurement circuit, and test the double-terminal fixed-supported tuning fork resonator frequency f _{4 ,k,i} (T), put f _4,k,i (T) into the formula Calculate the value σ _4,k,i (T) of the stress generated by the capping process at different temperatures, and then use the least square method to perform polynomial fitting on the residual stress σ _4,k,i (T) and T to obtain σ _4,k,i (T) temperature function:

σ _4,k,i (T)=σ _4,k,i (0)+a _4,1 T+a _4,2 T ² +…+a _4,n T ⁿ (10)

In the formula, σ _4,k,i (0) is the fitting value of the residual stress generated by the capping process at 0°C, a _4,1 , a _4,2 , and a _4,n are the residual stresses generated by the capping process respectively First-order, second-order, and n-order temperature coefficients.

The present invention can also measure the residual stress temperature characteristics produced by each step of the MEMS device processing process steps, that is, the above-mentioned steps one and two; steps one, two and three; steps one, two, three, four and steps one and two , 3, 4, and 5 respectively form a technical plan for testing the temperature characteristics of residual stress in each processing step.

Compared with the prior art, the present invention has the following remarkable advantages: (1) The test method is simple, and can realize the measurement of the temperature characteristic of the residual stress produced by the MEMS process. (2) The measurement of the residual stress temperature characteristics generated by each packaging process can be realized. (3) In the process of measuring the residual stress temperature characteristic, it is not necessary to disassemble the packaging structure, and the MEMS device will not be damaged. (4) The double-ended fixed-branched tuning fork resonator can be directly used to measure the package stress-temperature characteristics generated by each package process, which can be used as a basis for package process optimization. (5) It can be measured in real time and online.

The present invention will be described in further detail below in conjunction with the accompanying drawings.

Description of drawings

FIG. 1 is a schematic diagram of the first structure of the MEMS chip in the MEMS device residual stress measurement method of the present invention.

Fig. 2 is a schematic diagram of the second structure of the MEMS chip in the MEMS device residual stress measurement method of the present invention.

Fig. 3 is a flow chart of the stress test of the present invention.

Detailed ways

Since the thickness of the mechanical structure of MEMS devices is generally 2 to 3 microns or tens of microns, which is much smaller than the plane size, the residual stress gradient in the thickness direction can be ignored. One method uses the correlation between the frequency of the double-end fixed-branched tuning fork resonator and the axial stress on the beam, and obtains the in-plane residual stress temperature characteristics of the MEMS device through the temperature characteristics of the double-ended fixed-branched tuning fork resonators arranged perpendicularly to each other.

The present invention can measure it through the measurement system of the residual stress temperature characteristic of MEMS device, and this system comprises double-terminal solid support The measurement and control circuit and the frequency measurement circuit of the tuning fork resonator 3, the mechanical structure 2 of the double-ended fixed tuning fork resonator 3 and the MEMS device are integrated together to form a MEMS chip 1, and in each MEMS chip 1, at least four The double-ended fixed-supported tuning fork resonators 3 are evenly arranged around the mechanical structure 2, and the two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other (the even number of double-ended fixed-supported tuning fork resonators are arranged in this way, and the odd number After the double-ended fixed-branched tuning fork resonators are evenly distributed, the two double-ended fixed-branched tuning fork resonators in the corresponding positions are arranged perpendicular to each other, and the remaining one is parallel to the adjacent double-ended fixed-branched tuning fork resonator); MEMS chip 1 Installed on a temperature-controlled probe station, test the beam width and beam length of the double-ended fixed-branched tuning fork resonator 3 on the selected MEMS chip 1 through a scanning electron microscope; the driving electrodes, The detection electrode constitutes a closed-loop measurement and control circuit through the probe and its lead wires and the measurement and control circuit, so that the double-terminal fixed-supported tuning fork resonator 3 resonates at its natural frequency; the frequency measurement circuit detects the detection voltage frequency of the measurement and control circuit of the double-terminal fixed-supported tuning fork resonator 3 , to obtain the resonant frequency of the tuning fork resonator 3 with fixed supports at both ends.

Combined with Figure 3, the following is an example of the entire table package of the MEMS device mechanical structure, using the above-mentioned measurement system to measure the temperature characteristics of the processing stress of the MEMS device mechanical structure and the temperature characteristics of the packaging stress. The specific steps are as follows:

Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and the two double-ended fixed-branched tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other. In each MEMS chip 1 , the tuning fork resonator 3 with double-terminal fixed support is evenly arranged around the MEMS structure 2 . For the large-sized MEMS chip 1, more double-terminal fixed-branched tuning fork resonators 3 can be arranged around the MEMS structure 2, and for small-sized MEMS chips 1, less double-terminal fixed-branched tuning fork resonators can be arranged around the MEMS structure 2 3, but at least four double-ended fixed-branched tuning fork resonators 3 are arranged, as shown in Figure 1, to test the residual stress temperature characteristics in two directions in the plane respectively. In order to better measure the residual stress temperature characteristics, eight double-ended fixed-branched tuning fork resonators 3 can be evenly arranged around the mechanical structure 2, and two double-ended fixed-branched tuning fork resonators 3 symmetrical in each direction are perpendicular to each other layout, as shown in Figure 2.

Step 2, as shown in (a) of Figure 3, after the end of the micromachining process, hundreds or thousands of MEMS chips 1 are formed on the wafer 4, and the wafer 4 is mounted on a temperature-controlled probe station, and the wafer 4 Select a plurality of MEMS chips 1 in different areas on the Internet for testing: first, through a scanning electron microscope, test the beam width and beam length of the double-terminal fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode and detection electrode of the double-ended fixed-branched tuning fork resonator 3 are connected to the measurement and control circuit to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The temperature and temperature adjustment methods can be gradient temperature or temperature adjustment. Continuously variable temperature mode, using probes, measurement and control circuits and frequency measurement circuits to test the frequency f _0,k,i (T) of the double-ended fixed-branched tuning fork resonator 3 at different temperatures, f _0,k,i (T )Into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (1)

In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support Equivalent mass of tuning fork resonator 3.

Step 3, as shown in Figure 3 (b), the MEMS chip 1 on the wafer 4 is separated by a dicing process to obtain a single MEMS chip 1, and the diced MEMS chip 1 is installed on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, use the probe, the measurement and control circuit and the frequency measurement circuit to test the frequencies f _1,k,i (T) of these double-ended fixed-branched tuning fork resonators 3 at different temperatures, and set f _{1,k, i} (T) into the formula Calculate the value σ _1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _1,k,i (T) and temperature T, and obtain σ _1,k,i (T) as a function of temperature:

σ _1,k,i (T)=σ _1,k,i (0)+a _1,1 T+a _1,2 T ² +…+a _1,n T ⁿ (2)

In the formula, σ _1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a _1,1 , a _1,2 , and a _1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order, and n-order temperature coefficients.

Step 4, as shown in (c) of Fig. 3, the MEMS chip 1 obtained in step 3 is bonded into the shell 5 by the patch process, the MEMS chip 1 after the patch is installed on the temperature control probe station, and the temperature is adjusted. Control the temperature of the probe station, use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f _2,k,i (T) of these double-ended fixed-branched tuning fork resonators 3 at different temperatures, f _2,k,i ( T) into the formula Calculate the value σ _2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _2,k,i (T) and temperature T, and get σ _2,k,i (T) as a function of temperature:

σ _2,k,i (T)=σ _2,k,i (0)+a _2,1 T+a _2,2 T ² +…+a _2,n T ⁿ (3)

In the formula, σ _2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a _2,1 , a _2,2 , and a _2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order, and n-order temperature coefficients.

Step 5, as shown in (d) of Figure 3, adopts the wire bonding process, utilizes the metal lead 6 to realize the electrical interconnection between the MEMS chip 1 and the tube shell 5, adopts a stress-free installation method to install and fix the tube shell 5, and uses a gold Wire-weld the metal pins on the shell 5 and the corresponding metal pins on the measurement and control circuit, install the wire-bonded MEMS chip 1 on the jig, fix the jig in the temperature control box, and use the measurement and control circuit and frequency measurement After the circuit test wire bonding process, the frequency f _3,k,i (T) of the double-ended fixed-supported tuning fork resonator 3, substitute f _3,k,i (T) into the formula Calculate the value σ _3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _3,k,i (T) and temperature T, Obtain the temperature function of σ _3,k,i (T):

σ _3,k,i (T)=σ _3,k,i (0)+a _3,1 T+a _3,2 T ² +…+a _3,n T ⁿ (4)

In the formula, σ _3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a _3,1 , a _3,2 , and a _3,n are the residual stresses generated by the wire bonding process, respectively First, second and nth order temperature coefficients of stress.

Step 6, as shown in (e) of Figure 3, use the capping process to bond the cover plate 7 and the tube shell 5 together, install and fix the tube shell 5 in a stress-free installation method, and use gold wire to weld the tube shell 5 The metal pins and the corresponding metal pins on the measurement and control circuit install the capped MEMS chip 1 in the temperature control box, change the temperature in the temperature control box, and adopt the double-terminal fixed resonator 3 measurement and control circuit and measurement frequency circuit, test the frequency f _4,k,i (T) of the double-ended fixed-branched tuning fork resonator 3, and substitute f _4,k,i (T) into the formula Calculate the value σ _4,k,i (T) of the stress generated by the capping process at different temperatures, and then use the least square method to perform polynomial fitting on the residual stress σ _4,k,i (T) and T to obtain σ _4,k,i (T) temperature function:

σ _4,k,i (T)=σ _4,k,i (0)+a _4,1 T+a _4,2 T ² +...+a _4,n T ⁿ (5)

In the formula, σ _4,k,i (0) is the fitting value of the residual stress generated by the capping process at 0°C, a _4,1 , a _4,2 , and a _4,n are the residual stresses generated by the capping process respectively First-order, second-order, and n-order temperature coefficients.

The above test process shows that before and after one of the processes is implemented, such as scribing, patching, etc., the frequency of the double-ended fixed-branched tuning fork resonator 3 is tested, and the beam width and beam length of the double-ended fixed-branched tuning fork resonator 3 are tested. , the stress-temperature characteristics of the process can be obtained. In the optimization design of the packaging process, the double-ended fixed-branched tuning fork resonator can be directly used, and the measurement method can be used to measure the packaging stress generated by each packaging process and the temperature characteristics of the packaging stress, which will help optimize the packaging process and reduce the packaging cost. Stress, the specific scheme is as follows.

In conjunction with (a) to (d) of Fig. 3, the method for measuring the residual stress temperature characteristic of the MEMS device of the present invention, the steps are as follows:

Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other;

Step 2: After the micromachining process is completed, form hundreds or thousands of MEMS chips 1 on the wafer 4, install the wafer 4 on a temperature-controlled probe station, and select multiple MEMS chips in different areas on the wafer 4 Chip 1 is tested: firstly, through a scanning electron microscope, test the beam width and beam length of the double-end fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode, the detection electrode and the measurement and control circuit are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the double-ended fixed-supported tuning fork is tested by using the probe, measurement and control circuit and frequency measurement circuit. Frequency f _0,k,i (T) of resonator 3 at different temperatures, substitute f _0,k,i (T) into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (1)

In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support The equivalent mass of the tuning fork resonator 3;

Step 3: Separate the MEMS chip 1 on the wafer 4 by a dicing process to obtain a single MEMS chip 1, install the diced MEMS chip 1 on a temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, Utilize the probe, measurement and control circuit and frequency measurement circuit to test the frequency f _1,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f _1,k,i (T) into the formula Calculate the value σ _1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _1,k,i (T) and temperature T, and obtain σ _1,k,i (T) as a function of temperature:

σ _1,k,i (T)=σ _1,k,i (0)+a _1,1 T+a _1,2 T ² +…+a _1,n T ⁿ (2)

In the formula, σ _1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a _1,1 , a _1,2 , and a _1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients;

Step 4: Bond the MEMS chip 1 obtained in step 3 into the tube shell 5 by using the patch process, install the MEMS chip 1 after the patch on the temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, and use the probe Needle, measurement and control circuit and frequency measurement circuit test the frequency f _2,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f _2,k,i (T) into the formula Calculate the value σ _2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _2,k,i (T) and temperature T, and get σ _2,k,i (T) as a function of temperature:

σ _2,k,i (T)=σ _2,k,i (0)+a _2,1 T+a _2,2 T ² +…+a _2,n T ⁿ (3)

In the formula, σ _2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a _2,1 , a _2,2 , and a _2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order and n-order temperature coefficients;

Step 5, using a wire bonding process, using the metal lead 6 to realize the electrical interconnection between the MEMS chip 1 and the shell 5, using a stress-free installation method to install and fix the shell 5, and welding the metal on the shell 5 with a gold wire Pins and the corresponding metal pins on the measurement and control circuit, the wire-bonded MEMS chip 1 is installed on the fixture, the fixture is fixed in the temperature control box, and the measurement and control circuit and the frequency measurement circuit are used to test the wire bonding process. The frequency f _3,k,i (T) of the end-fixed tuning fork resonator 3, substitute f _3,k,i (T) into the formula Calculate the value σ _3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _3,k,i (T) and temperature T, Obtain the temperature function of σ _3,k,i (T):

σ _3,k,i (T)=σ _3,k,i (0)+a _3,1 T+a _3,2 T ² +…+a _3,n T ⁿ (4)

In the formula, σ _3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a _3,1 , a _3,2 , and a _3,n are the residual stresses generated by the wire bonding process, respectively First, second and nth order temperature coefficients of stress.

In conjunction with (a) to (c) of Fig. 3, the measuring method of MEMS device residual stress temperature characteristic of the present invention, the steps are as follows:

Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other;

Step 2: After the micromachining process is completed, form hundreds or thousands of MEMS chips 1 on the wafer 4, install the wafer 4 on a temperature-controlled probe station, and select multiple MEMS chips in different areas on the wafer 4 Chip 1 is tested: firstly, through a scanning electron microscope, test the beam width and beam length of the double-end fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode, the detection electrode and the measurement and control circuit are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the double-ended fixed-supported tuning fork is tested by using the probe, measurement and control circuit and frequency measurement circuit. Frequency f _0,k,i (T) of resonator 3 at different temperatures, substitute f _0,k,i (T) into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (1)

In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support The equivalent mass of the tuning fork resonator 3;

Step 3: Separate the MEMS chip 1 on the wafer 4 by a dicing process to obtain a single MEMS chip 1, install the diced MEMS chip 1 on a temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, Utilize the probe, measurement and control circuit and frequency measurement circuit to test the frequency f _1,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f _1,k,i (T) into the formula Calculate the value σ _1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _1,k,i (T) and temperature T, and obtain σ _1,k,i (T) as a function of temperature:

σ _1,k,i (T)=σ _1,k,i (0)+a _1,1 T+a _1,2 T ² +…+a _1,n T ⁿ (2)

In the formula, σ _1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a _1,1 , a _1,2 , and a _1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients;

Step 4: Bond the MEMS chip 1 obtained in step 3 into the tube shell 5 by using the patch process, install the MEMS chip 1 after the patch on the temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, and use the probe Needle, measurement and control circuit and frequency measurement circuit test the frequency f _2,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f _2,k,i (T) into the formula Calculate the value σ _2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _2,k,i (T) and temperature T, and get σ _2,k,i (T) as a function of temperature:

σ _2,k,i (T)=σ _2,k,i (0)+a _2,1 T+a _2,2 T ² +…+a _2,n T ⁿ (3)

In the formula, σ _2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a _2,1 , a _2,2 , and a _2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order, and n-order temperature coefficients.

In conjunction with (a) to (b) of Fig. 3, the measuring method of MEMS device residual stress temperature characteristic of the present invention, the steps are as follows:

Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other;

Step 2: After the micromachining process is completed, form hundreds or thousands of MEMS chips 1 on the wafer 4, install the wafer 4 on a temperature-controlled probe station, and select multiple MEMS chips in different areas on the wafer 4 Chip 1 is tested: firstly, through a scanning electron microscope, test the beam width and beam length of the double-end fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode, the detection electrode and the measurement and control circuit are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the double-ended fixed-supported tuning fork is tested by using the probe, measurement and control circuit and frequency measurement circuit. Frequency f _0,k,i (T) of resonator 3 at different temperatures, substitute f _0,k,i (T) into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (1)

In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support The equivalent mass of the tuning fork resonator 3;

Step 3: Separate the MEMS chip 1 on the wafer 4 by a dicing process to obtain a single MEMS chip 1, install the diced MEMS chip 1 on a temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, Utilize the probe, measurement and control circuit and frequency measurement circuit to test the frequency f _1,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f _1,k,i (T) into the formula Calculate the value σ _1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _1,k,i (T) and temperature T, and obtain σ _1,k,i (T) as a function of temperature:

σ _1,k,i (T)=σ _1,k,i (0)+a _1,1 T+a _1,2 T ² +…+a _1,n T ⁿ (2)

In the formula, σ _1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a _1,1 , a _1,2 , and a _1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order, and n-order temperature coefficients.

In conjunction with (a) of Fig. 3, the measuring method of MEMS device residual stress temperature characteristic of the present invention, the steps are as follows:

Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other;

Step 2: After the micromachining process is completed, form hundreds or thousands of MEMS chips 1 on the wafer 4, install the wafer 4 on a temperature-controlled probe station, and select multiple MEMS chips in different areas on the wafer 4 Chip 1 is tested: firstly, through a scanning electron microscope, test the beam width and beam length of the double-end fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode, the detection electrode and the measurement and control circuit are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the double-ended fixed-supported tuning fork is tested by using the probe, measurement and control circuit and frequency measurement circuit. Frequency f _0,k,i (T) of resonator 3 at different temperatures, substitute f _0,k,i (T) into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (1)

In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support Equivalent mass of tuning fork resonator 3.

Claims (5)

1. a kind of measuring method of MEMS device residual stress temperature characteristic, double-end solid support tuning fork resonator (3) and mechanical structure (2) are integrated together to form MEMS chip (1), it is characterized in that also comprising the following steps: Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f _{0, k, i} (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f _{0, k, i} (T) is substituted into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (6) In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively Long, M is the equivalent mass of the double-ended fixed support tuning fork resonator (3); Step 3, using a dicing process to separate the MEMS chip (1) on the wafer (4) to obtain a single MEMS chip (1), and installing the diced MEMS chip (1) on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f _1,k,i (T) of these double-ended fixed-branched tuning fork resonators ( 3 ) at different temperatures, and set f _{1, k,i} (T) into the formula Calculate the value σ _1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _1,k,i (T) and temperature T, and obtain σ _1,k,i (T) as a function of temperature: σ _1,k,i (T)=σ _1,k,i (0)+a _1,1 T+a _1,2 T ² +…+a _1,n T ⁿ (7) In the formula, σ _1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a _1,1 , a _1,2 , and a _1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients; Step 4: Bond the MEMS chip (1) obtained in Step 3 into the tube shell (5) by using the SMT process, install the MEMS chip (1) after the patch on the temperature control probe station, adjust the temperature control probe Needle table temperature, using probes, measurement and control circuits and frequency measurement circuits to test the frequency f _2,k,i (T) of these double-ended fixed-supported tuning fork resonators (3) at different temperatures, f _2,k,i ( T) into the formula Calculate the value σ _2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _2,k,i (T) and temperature T, and get σ _2,k,i (T) as a function of temperature: σ _2,k,i (T)=σ _2,k,i (0)+a _2,1 T+a _2,2 T ² +…+a _2,n T ⁿ (8) In the formula, σ _2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a _2,1 , a _2,2 , and a _2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order and n-order temperature coefficients; Step five, using wire bonding process, using metal leads (6) to realize the electrical interconnection between the MEMS chip (1) and the shell (5), using a stress-free installation method to install and fix the shell (5), using gold Wire-weld the metal pins on the shell (5) and the corresponding metal pins on the measurement and control circuit, install the wire-bonded MEMS chip (1) on the jig, fix the jig in the temperature control box, and use the measurement and control Circuit and frequency measuring circuit test wire bonding process double-ended fixed support tuning fork resonator 3 frequency f _3,k,i (T), put f _3,k,i (T) into the formula Calculate the value σ _3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _3,k,i (T) and temperature T, Obtain the temperature function of σ _3,k,i (T): σ _3,k,i (T)=σ _3,k,i (0)+a _3,1 T+a _3,2 T ² +…+a _3,n T ⁿ (9) In the formula, σ _3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a _3,1 , a _3,2 , and a _3,n are the residual stresses generated by the wire bonding process, respectively The first-order, second-order and n-order temperature coefficients of stress; Step 6: Bond the cover plate (7) and the shell (5) together by using the capping process, install and fix the shell (5) in a stress-free installation method, and use gold wire to weld the shell (5) The metal pins and the corresponding metal pins on the measurement and control circuit, install the capped MEMS chip (1) in the temperature control box, change the temperature in the temperature control box, and use the double-terminal solid support resonator (3) for measurement and control Circuit and frequency measurement circuit, test the frequency f _4,k,i (T) of the double-ended fixed-branched tuning fork resonator ( 3), substitute f _4,k,i (T) into the formula Calculate the value σ _4,k,i (T) of the stress generated by the capping process at different temperatures, and then use the least square method to perform polynomial fitting on the residual stress σ _4,k,i (T) and T to obtain σ _4,k,i (T) temperature function: σ _4,k,i (T)=σ _4,k,i (0)+a _4,1 T+a _4,2 T ² +…+a _4,n T ⁿ (10) In the formula, σ _4,k,i (0) is the fitting value of the residual stress generated by the capping process at 0°C, a _4,1 , a _4,2 , and a _4,n are the residual stresses generated by the capping process respectively First-order, second-order, and n-order temperature coefficients. 2. a method for measuring the residual stress temperature characteristics of a MEMS device, which integrates a double-ended tuning fork resonator (3) and a mechanical structure (2) to form a MEMS chip (1), is characterized in that it also includes the following steps: Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f _{0, k, i} (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f _{0, k, i} (T) is substituted into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (6) In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively Long, M is the equivalent mass of the double-ended fixed support tuning fork resonator (3); Step 3, using a dicing process to separate the MEMS chip (1) on the wafer (4) to obtain a single MEMS chip (1), and installing the diced MEMS chip (1) on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f _1,k,i (T) of these double-ended fixed-branched tuning fork resonators ( 3 ) at different temperatures, and set f _{1, k,i} (T) into the formula Calculate the value σ _1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _1,k,i (T) and temperature T, and obtain σ _1,k,i (T) as a function of temperature: σ _1,k,i (T)=σ _1,k,i (0)+a _1,1 T+a _1,2 T ² +…+a _1,n T ⁿ (7) In the formula, σ _1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a _1,1 , a _1,2 , and a _1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients; Step 4: Bond the MEMS chip (1) obtained in Step 3 into the tube shell (5) by using the SMT process, install the MEMS chip (1) after the patch on the temperature control probe station, adjust the temperature control probe Needle table temperature, using probes, measurement and control circuits and frequency measurement circuits to test the frequency f _2,k,i (T) of these double-ended fixed-supported tuning fork resonators (3) at different temperatures, f _2,k,i ( T) into the formula Calculate the value σ _2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _2,k,i (T) and temperature T, and get σ _2,k,i (T) as a function of temperature: σ _2,k,i (T)=σ _2,k,i (0)+a _2,1 T+a _2,2 T ² +…+a _2,n T ⁿ (8) In the formula, σ _2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a _2,1 , a _2,2 , and a _2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order and n-order temperature coefficients; Step five, using wire bonding process, using metal leads (6) to realize the electrical interconnection between the MEMS chip (1) and the shell (5), using a stress-free installation method to install and fix the shell (5), using gold Wire-weld the metal pins on the shell (5) and the corresponding metal pins on the measurement and control circuit, install the wire-bonded MEMS chip (1) on the jig, fix the jig in the temperature control box, and use the measurement and control Circuit and frequency measuring circuit test wire bonding process double-ended fixed support tuning fork resonator 3 frequency f _3,k,i (T), put f _3,k,i (T) into the formula Calculate the value σ _3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _3,k,i (T) and temperature T, Obtain the temperature function of σ _3,k,i (T): σ _3,k,i (T)=σ _3,k,i (0)+a _3,1 T+a _3,2 T ² +…+a _3,n T ⁿ (9) In the formula, σ _3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a _3,1 , a _3,2 , and a _3,n are the residual stresses generated by the wire bonding process, respectively First, second and nth order temperature coefficients of stress. 3. a method for measuring the residual stress temperature characteristic of a MEMS device, which integrates a double-ended tuning fork resonator (3) and a mechanical structure (2) to form a MEMS chip (1), is characterized in that it also includes the following steps: Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f _{0, k, i} (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f _{0, k, i} (T) is substituted into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (6) In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structural material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively Long, M is the equivalent mass of the double-ended fixed support tuning fork resonator (3); Step 3, using a dicing process to separate the MEMS chip (1) on the wafer (4) to obtain a single MEMS chip (1), and installing the diced MEMS chip (1) on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f _1,k,i (T) of these double-ended fixed-branched tuning fork resonators ( 3 ) at different temperatures, and set f _{1, k,i} (T) into the formula Calculate the value σ _1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _1,k,i (T) and temperature T, and obtain σ _1,k,i (T) as a function of temperature: σ _1,k,i (T)=σ _1,k,i (0)+a _1,1 T+a _1,2 T ² +…+a _1,n T ⁿ (7) In the formula, σ _1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a _1,1 , a _1,2 , and a _1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients; Step 4: Bond the MEMS chip (1) obtained in Step 3 into the tube shell (5) by using the SMT process, install the MEMS chip (1) after the patch on the temperature control probe station, adjust the temperature control probe Needle table temperature, using probes, measurement and control circuits and frequency measurement circuits to test the frequency f _2,k,i (T) of these double-ended fixed-supported tuning fork resonators (3) at different temperatures, f _2,k,i ( T) into the formula Calculate the value σ _2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _2,k,i (T) and temperature T, and get σ _2,k,i (T) as a function of temperature: σ _2,k,i (T)=σ _2,k,i (0)+a _2,1 T+a _2,2 T ² +…+a _2,n T ⁿ (8) In the formula, σ _2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a _2,1 , a _2,2 , and a _2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order, and n-order temperature coefficients. 4. a method for measuring the residual stress temperature characteristic of a MEMS device, the double-ended fixed support tuning fork resonator (3) and mechanical structure (2) are integrated together to form the MEMS chip (1), it is characterized in that also comprising the following steps: Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f _{0, k, i} (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f _{0, k, i} (T) is substituted into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (6) In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively Long, M is the equivalent mass of the double-ended fixed support tuning fork resonator (3); Step 3, using a dicing process to separate the MEMS chip (1) on the wafer (4) to obtain a single MEMS chip (1), and installing the diced MEMS chip (1) on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f _1,k,i (T) of these double-ended fixed-branched tuning fork resonators ( 3 ) at different temperatures, and set f _{1, k,i} (T) into the formula Calculate the value σ _1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ _1,k,i (T) and temperature T, and obtain σ _1,k,i (T) as a function of temperature: σ _1,k,i (T)=σ _1,k,i (0)+a _1,1 T+a _1,2 T ² +…+a _1,n T ⁿ (7) In the formula, σ _1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a _1,1 , a _1,2 , and a _1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order, and n-order temperature coefficients. 5. a kind of measuring method of MEMS device residual stress temperature characteristic, double-end solid support tuning fork resonator (3) and mechanical structure (2) are integrated together to form MEMS chip (1), it is characterized in that also comprising the following steps: Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f _{0, k, i} (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f _{0, k, i} (T) is substituted into the formula Calculate the processing stress σ _0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ _0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ _0,k,i (T)=σ _0,k,i (0)+a _0,1 T+a _0,2 T ² +…+a _0,n T ⁿ (6) In the formula, σ _0,k,i (0) is the fitting value of processing stress at 0°C, a _0,1 , a _0,2 , a _0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structural material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively long, and M is the equivalent mass of the double-ended fixed-supported tuning fork resonator (3).