CN105699424B - A kind of measuring method of MEMS device residual stress temperature characterisitic - Google Patents

A kind of measuring method of MEMS device residual stress temperature characterisitic Download PDF

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CN105699424B
CN105699424B CN201610122108.7A CN201610122108A CN105699424B CN 105699424 B CN105699424 B CN 105699424B CN 201610122108 A CN201610122108 A CN 201610122108A CN 105699424 B CN105699424 B CN 105699424B
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裘安萍
施芹
夏国明
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Nanjing University of Science and Technology
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Abstract

本发明公开了一种MEMS器件残余应力温度特性的测量方法,将MEMS器件的机械结构和双端固支音叉谐振器集成在同一个芯片上,利用双端固支音叉谐振器频率与其梁上的轴向应力具有相关性,通过测试不同温度下的双端固支音叉谐振器频率,得到不同温度下的残余应力,从而得到残余应力的温度特性。本发明测试方法简单,可实现MEMS工艺产生的残余应力温度特性的测量;可实现封装每道工艺所产生的残余应力温度特性的测量;残余应力温度特性测量过程中,不需要拆开封装结构,不会对MEMS器件造成损伤。

The invention discloses a method for measuring the residual stress temperature characteristics of a MEMS device, which integrates the mechanical structure of the MEMS device and a double-end fixed-branched tuning fork resonator on the same chip, and utilizes the frequency of the double-ended fixed-branched tuning fork resonator and the The axial stress is correlated, and the residual stress at different temperatures is obtained by testing the frequency of the double-ended fixed-branched tuning fork resonator at different temperatures, so as to obtain the temperature characteristics of the residual stress. The test method of the present invention is simple, and can realize the measurement of the residual stress temperature characteristic produced by the MEMS process; can realize the measurement of the residual stress temperature characteristic produced by each packaging process; Will not cause damage to MEMS devices.

Description

一种MEMS器件残余应力温度特性的测量方法A Measuring Method for Residual Stress-Temperature Characteristics of MEMS Devices

技术领域technical field

本发明属于MEMS器件残余应力测试技术,特别是一种MEMS器件残余应力温度特性的测量方法。The invention belongs to the residual stress testing technology of MEMS devices, in particular to a method for measuring the residual stress temperature characteristics of MEMS devices.

背景技术Background technique

MEMS(Micro-Electro-Mechanical-System,微机电系统)器件的机械结构(为敏感元件)在加工和封装过程中,会产生残余应力,残余应力包括了加工应力和封装应力。残余应力会影响MEMS器件输出信号,特别是残余应力有变化时,如残余应力随温度的变化或应力的蠕变都将会通过机械结构以电信号的形式反应到输出信号上,从而使MEMS器件的输出发生偏移,降低了MEMS器件性能。因此,残余应力控制以及残余应力的温度特性都是MEMS器件加工与封装必须考虑的因素之一。而在应力控制之前,首先要精确地进行残余应力温度特性(包括加工应力的温度特性和封装应力的温度特性。)的测量。The mechanical structure of the MEMS (Micro-Electro-Mechanical-System, micro-electro-mechanical system) device (which is a sensitive element) will generate residual stress during the process of processing and packaging, and the residual stress includes processing stress and packaging stress. The residual stress will affect the output signal of the MEMS device, especially when the residual stress changes, such as the change of the residual stress with the temperature or the creep of the stress, it will be reflected on the output signal in the form of an electrical signal through the mechanical structure, so that the MEMS device The output of the device is shifted, which reduces the performance of the MEMS device. Therefore, residual stress control and temperature characteristics of residual stress are one of the factors that must be considered in the processing and packaging of MEMS devices. Before stress control, the temperature characteristics of residual stress (including temperature characteristics of processing stress and temperature characteristics of packaging stress.) must be accurately measured.

目前,MEMS器件残余应力测量通常采用光学设备测试芯片的翘曲度,如云纹干涉法(Moire Interference Method)、激光全息干涉法和激光散斑干涉法等,再根据翘曲度估算残余应力((1)马斌,任继文,张鸿海等.键合技术中键合胶残余应力检测的实验研究.机械科学与技术,2005,24(6):736-739.(2)邱宇,雷振坤,亢一澜等.微拉曼光谱技术及其在微结构残余应力检测中的应用,机械强度,2004,26(4):389-392。)。首先,该测试方法需要昂贵的光学设备;其次,通过该方法可以得到晶圆的整体应力水平,无法获悉局部的应力分布情况;第三,对晶圆进行划片得到单个MEMS芯片,由于MEMS芯片尺寸在毫米量级,与晶圆相比,MEMS芯片的弯曲挠度大大减小,此时采用光学方法进行残余应力的测量时存在较大的测量误差,甚至当弯曲挠度近似为零时,无法得到应力测量结果;第四,封装好的MEMS器件需要测量残余应力时,必须拆开封装结构,破坏了封装结构,且易造成MEMS结构损坏,从而影响残余应力的正确测量。残余应力温度特性的测量时,同样存在上述技术问题,而且需要的测试设备则更为复杂。At present, the residual stress measurement of MEMS devices usually uses optical equipment to test the warpage of the chip, such as Moire Interference Method, laser holographic interferometry and laser speckle interferometry, etc., and then estimates the residual stress according to the warpage ( (1) Ma Bin, Ren Jiwen, Zhang Honghai, etc. Experimental Research on Residual Stress Detection of Bonding Adhesive in Bonding Technology. Mechanical Science and Technology, 2005,24(6):736-739.(2) Qiu Yu, Lei Zhenkun , Kang Yilan et al. Micro-Raman spectroscopy and its application in microstructure residual stress detection, Mechanical Strength, 2004, 26(4):389-392.). Firstly, this test method requires expensive optical equipment; secondly, the overall stress level of the wafer can be obtained through this method, and the local stress distribution cannot be obtained; thirdly, a single MEMS chip is obtained by dicing the wafer. The size is on the order of millimeters. Compared with the wafer, the bending deflection of the MEMS chip is greatly reduced. At this time, there is a large measurement error when using the optical method to measure the residual stress, and even when the bending deflection is approximately zero, it cannot be obtained. Stress measurement results; Fourth, when the packaged MEMS device needs to measure the residual stress, the package structure must be disassembled, which destroys the package structure and easily causes damage to the MEMS structure, thereby affecting the correct measurement of the residual stress. The above-mentioned technical problems also exist in the measurement of residual stress temperature characteristics, and the required testing equipment is more complicated.

发明内容Contents of the invention

针对现有技术缺陷,本发明目的在于提供一种方便、高灵敏度、高精度的MEMS器件残余应力温度特性的测量方法。Aiming at the defects of the prior art, the purpose of the present invention is to provide a convenient, high-sensitivity, and high-precision measurement method for the residual stress-temperature characteristics of MEMS devices.

实现本发明目的的技术解决方案为:一种MEMS器件残余应力温度特性的测量方法,步骤如下:The technical solution that realizes the object of the present invention is: a kind of measuring method of residual stress temperature characteristic of MEMS device, and the steps are as follows:

步骤一,将双端固支音叉谐振器和机械结构集成在一起形成MEMS芯片,在每个MEMS芯片内,至少四个双端固支音叉谐振器均匀布置在机械结构四周,且呈对称布置的两个双端固支音叉谐振器互相垂直布置;Step 1: Integrate the double-end fixed-branched tuning fork resonator and the mechanical structure together to form a MEMS chip. In each MEMS chip, at least four double-ended fixed-branched tuning fork resonators are evenly arranged around the mechanical structure and arranged symmetrically. Two double-ended fixed support tuning fork resonators are arranged perpendicular to each other;

步骤二,微机械加工工艺结束后,在晶圆上形成成百上千个MEMS芯片,将晶圆安装在温控探针台上,在晶圆上不同的区域选取多个MEMS芯片进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片上的双端固支音叉谐振器的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2: After the micromachining process is completed, hundreds of MEMS chips are formed on the wafer, the wafer is installed on a temperature-controlled probe station, and multiple MEMS chips are selected from different areas on the wafer for testing: Firstly, through a scanning electron microscope, test the beam width and beam length of the double-terminal fixed-branched tuning fork resonator on the selected MEMS chip; The circuits are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the frequency of the double-terminal fixed-branched tuning fork resonator at different temperatures is tested by using the probe, measurement and control circuit and frequency measurement circuit. f 0,k,i (T), put f 0,k,i (T) into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n

式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片上双端固支音叉谐振器的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器的梁宽和梁长,M为双端固支音叉谐振器的等效质量;In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip; i=1,2,...,m, m≥4, i represents the resonance of the double-ended fixed-branched tuning fork on the same MEMS chip The label of the device; E is the Young's modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the double-end fixed-branched tuning fork resonator, and M is the double-ended fixed-branched tuning fork resonator equivalent mass;

步骤三,采用划片工艺将晶圆上的MEMS芯片进行分离,得到单个MEMS芯片,将划片后的MEMS芯片安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器在不同温度下的频率f1,k,i(T),将f1,k,i(T)代入公式计算出划片工艺产生的应力在不同温度下的值σ1,k,i(T),再采用最小二乘法进行残余应力σ1,k,i(T)和温度T的多项式拟合,得到σ1,k,i(T)的温度函数:Step 3: Separating the MEMS chip on the wafer by dicing process to obtain a single MEMS chip, installing the diced MEMS chip on the temperature-controlled probe station, adjusting the temperature of the temperature-controlled probe station, using probes, The measurement and control circuit and the frequency measurement circuit test the frequency f 1,k,i (T) of these double-ended fixed-supported tuning fork resonators at different temperatures, and substitute f 1,k,i (T) into the formula Calculate the value σ 1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 1,k,i (T) and temperature T, and obtain σ 1,k,i (T) as a function of temperature:

σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn σ 1,k,i (T)=σ 1,k,i (0)+a 1,1 T+a 1,2 T 2 +…+a 1,n T n

式中,σ1,k,i(0)为0℃时划片工艺产生残余应力的拟合值,a1,1、a1,2、a1,n分别为划片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a 1,1 , a 1,2 , and a 1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients;

步骤四,采用贴片工艺将步骤三得到的MEMS芯片粘接到管壳内,将贴片后的MEMS芯片安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器在不同温度下的频率f2,k,i(T),将f2,k,i(T)代入公式计算出贴片工艺产生的应力在不同温度下的值σ2,k,i(T),再采用最小二乘法进行残余应力σ2,k,i(T)和温度T的多项式拟合,得到σ2,k,i(T)的温度函数:Step 4: Bond the MEMS chip obtained in Step 3 into the shell by using the SMT process, install the MEMS chip after the patch on the temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control The circuit and the frequency measurement circuit test the frequency f 2,k,i (T) of these double-ended fixed-branched tuning fork resonators at different temperatures, and substitute f 2,k,i (T) into the formula Calculate the value σ 2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 2,k,i (T) and temperature T, and get σ 2,k,i (T) as a function of temperature:

σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn σ 2,k,i (T)=σ 2,k,i (0)+a 2,1 T+a 2,2 T 2 +…+a 2,n T n

式中,σ2,k,i(0)为0℃时贴片工艺产生残余应力的拟合值,a2,1、a2,2、a2,n分别为贴片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a 2,1 , a 2,2 , and a 2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order and n-order temperature coefficients;

步骤五,采用引线键合工艺,利用金属引线实现MEMS芯片与管壳之间的电互连,采用无应力安装方式将管壳安装固定,利用金丝焊接管壳上的金属引脚和测控电路上对应的金属引脚,将引线键合后的MEMS芯片安装在卡具上,卡具固定在温控箱内,采用测控电路和测频电路测试引线键合工艺后双端固支音叉谐振器频率f3,k,i(T),将f3,k,i(T)代入公式计算出引线键合工艺产生的应力在不同温度下的值σ3,k,i(T),再采用最小二乘法进行残余应力σ3,k,i(T)和温度T的多项式拟合,得到σ3,k,i(T)的温度函数:Step 5: Using the wire bonding process, using metal leads to realize the electrical interconnection between the MEMS chip and the shell, using a stress-free installation method to install and fix the shell, and using gold wire to weld the metal pins on the shell and the measurement and control circuit On the corresponding metal pins, install the wire-bonded MEMS chip on the fixture, fix the fixture in the temperature control box, use the measurement and control circuit and the frequency measurement circuit to test the double-end fixed support tuning fork resonator after the wire bonding process Frequency f 3,k,i (T), substitute f 3,k,i (T) into the formula Calculate the value σ 3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 3,k,i (T) and temperature T, Obtain the temperature function of σ 3,k,i (T):

σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn σ 3,k,i (T)=σ 3,k,i (0)+a 3,1 T+a 3,2 T 2 +…+a 3,n T n

式中,σ3,k,i(0)为0℃时引线键合工艺产生残余应力的拟合值,a3,1、a3,2、a3,n分别为引线键合工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a 3,1 , a 3,2 , and a 3,n are the residual stresses generated by the wire bonding process, respectively The first-order, second-order and n-order temperature coefficients of stress;

步骤六,采用封帽工艺,将盖板与管壳键合在一起,采用无应力安装方式将管壳安装固定,利用金丝焊接管壳上的金属引脚和测控电路上对应的金属引脚,将封帽后的MEMS芯片,安装在温控箱内,改变温控箱内的温度,采用采用双端固支谐振器测控电路和测频电路,测试双端固支音叉谐振器频率f4,k,i(T),将f4,k,i(T)代入公式计算出封帽工艺产生的应力在不同温度下的值σ4,k,i(T),再采用最小二乘法进行残余应力σ4,k,i(T)和T进行多项式拟合,得到σ4,k,i(T)的温度函数:Step 6: Use the capping process to bond the cover plate and the tube shell together, install and fix the tube shell in a stress-free installation method, and use gold wire to weld the metal pins on the tube shell and the corresponding metal pins on the measurement and control circuit , install the capped MEMS chip in the temperature control box, change the temperature in the temperature control box, use the double-terminal fixed-supported resonator measurement and control circuit and frequency measurement circuit, and test the double-terminal fixed-supported tuning fork resonator frequency f 4 ,k,i (T), put f 4,k,i (T) into the formula Calculate the value σ 4,k,i (T) of the stress generated by the capping process at different temperatures, and then use the least square method to perform polynomial fitting on the residual stress σ 4,k,i (T) and T to obtain σ 4,k,i (T) temperature function:

σ4,k,i(T)=σ4,k,i(0)+a4,1T+a4,2T2+…+a4,nTn (10)σ 4,k,i (T)=σ 4,k,i (0)+a 4,1 T+a 4,2 T 2 +…+a 4,n T n (10)

式中,σ4,k,i(0)为0℃时封帽工艺产生残余应力的拟合值,a4,1、a4,2、a4,n分别为封帽工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 4,k,i (0) is the fitting value of the residual stress generated by the capping process at 0°C, a 4,1 , a 4,2 , and a 4,n are the residual stresses generated by the capping process respectively First-order, second-order, and n-order temperature coefficients.

本发明还可以测量MEMS器件加工工艺步骤的每个步骤所产生的残余应力温度特性,即是上述步骤一、二;步骤一、二、三;步骤一、二、三、四以及步骤一、二、三、四、五分别形成每个加工步骤测试残余应力温度特性的技术方案。The present invention can also measure the residual stress temperature characteristics produced by each step of the MEMS device processing process steps, that is, the above-mentioned steps one and two; steps one, two and three; steps one, two, three, four and steps one and two , 3, 4, and 5 respectively form a technical plan for testing the temperature characteristics of residual stress in each processing step.

本发明与现有技术相比,其显著优点:(1)测试方法简单,可实现MEMS工艺产生的残余应力温度特性的测量。(2)可实现封装每道工艺所产生的残余应力温度特性的测量。(3)残余应力温度特性测量过程中,不需要拆开封装结构,不会对MEMS器件造成损伤。(4)可直接利用双端固支音叉谐振器,测量每道封装工艺产生的封装应力温度特性,作为封装工艺优化的依据。(5)可以实时和在线进行测量。Compared with the prior art, the present invention has the following remarkable advantages: (1) The test method is simple, and can realize the measurement of the temperature characteristic of the residual stress produced by the MEMS process. (2) The measurement of the residual stress temperature characteristics generated by each packaging process can be realized. (3) In the process of measuring the residual stress temperature characteristic, it is not necessary to disassemble the packaging structure, and the MEMS device will not be damaged. (4) The double-ended fixed-branched tuning fork resonator can be directly used to measure the package stress-temperature characteristics generated by each package process, which can be used as a basis for package process optimization. (5) It can be measured in real time and online.

下面结合附图对本发明作进一步详细描述。The present invention will be described in further detail below in conjunction with the accompanying drawings.

附图说明Description of drawings

图1是本发明MEMS器件残余应力测量方法中的MEMS芯片第一种结构示意图。FIG. 1 is a schematic diagram of the first structure of the MEMS chip in the MEMS device residual stress measurement method of the present invention.

图2是本发明MEMS器件残余应力测量方法中的MEMS芯片第二种结构示意图。Fig. 2 is a schematic diagram of the second structure of the MEMS chip in the MEMS device residual stress measurement method of the present invention.

图3是本发明的应力测试流程图。Fig. 3 is a flow chart of the stress test of the present invention.

具体实施方式Detailed ways

由于MEMS器件的机械结构厚度一般为2~3微米或几十微米,远小于平面尺寸,因此可以忽略厚度方向上残余应力梯度。一种利用双端固支音叉谐振器频率与其梁上的轴向应力具有相关性,通过相互垂直布置的双端固支音叉谐振器的温度特性,从而获得MEMS器件平面内残余应力温度特性。Since the thickness of the mechanical structure of MEMS devices is generally 2 to 3 microns or tens of microns, which is much smaller than the plane size, the residual stress gradient in the thickness direction can be ignored. One method uses the correlation between the frequency of the double-end fixed-branched tuning fork resonator and the axial stress on the beam, and obtains the in-plane residual stress temperature characteristics of the MEMS device through the temperature characteristics of the double-ended fixed-branched tuning fork resonators arranged perpendicularly to each other.

本发明可以通过MEMS器件残余应力温度特性的测量系统对其进行测量,该系统包括双端固支音叉谐振器3、温控探针台、探针、测试电路,该测试电路包括了双端固支音叉谐振器3的测控电路和测频电路,所述的双端固支音叉谐振器3和MEMS器件的机械结构2集成在一起形成MEMS芯片1,在每个MEMS芯片1内,至少四个双端固支音叉谐振器3均匀布置在机械结构2四周,且呈对称布置的两个双端固支音叉谐振器3互相垂直布置(偶数个双端固支音叉谐振器是这样设置,奇数个双端固支音叉谐振器均布后相对应位置的两个双端固支音叉谐振器互相垂直布置,而剩下的一个与其中相邻的一个双端固支音叉谐振器平行);MEMS芯片1安装在温控探针台上,通过扫描电子显微镜,测试所挑选MEMS芯片1上的双端固支音叉谐振器3的梁宽和梁长;双端固支音叉谐振器3的驱动电极、检测电极通过探针及其引线与测控电路构成闭环测控回路,使得双端固支音叉谐振器3以其固有频率谐振;测频电路检测双端固支音叉谐振器3的测控电路的检测电压频率,得到双端固支音叉谐振器3的谐振频率。The present invention can measure it through the measurement system of the residual stress temperature characteristic of MEMS device, and this system comprises double-terminal solid support The measurement and control circuit and the frequency measurement circuit of the tuning fork resonator 3, the mechanical structure 2 of the double-ended fixed tuning fork resonator 3 and the MEMS device are integrated together to form a MEMS chip 1, and in each MEMS chip 1, at least four The double-ended fixed-supported tuning fork resonators 3 are evenly arranged around the mechanical structure 2, and the two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other (the even number of double-ended fixed-supported tuning fork resonators are arranged in this way, and the odd number After the double-ended fixed-branched tuning fork resonators are evenly distributed, the two double-ended fixed-branched tuning fork resonators in the corresponding positions are arranged perpendicular to each other, and the remaining one is parallel to the adjacent double-ended fixed-branched tuning fork resonator); MEMS chip 1 Installed on a temperature-controlled probe station, test the beam width and beam length of the double-ended fixed-branched tuning fork resonator 3 on the selected MEMS chip 1 through a scanning electron microscope; the driving electrodes, The detection electrode constitutes a closed-loop measurement and control circuit through the probe and its lead wires and the measurement and control circuit, so that the double-terminal fixed-supported tuning fork resonator 3 resonates at its natural frequency; the frequency measurement circuit detects the detection voltage frequency of the measurement and control circuit of the double-terminal fixed-supported tuning fork resonator 3 , to obtain the resonant frequency of the tuning fork resonator 3 with fixed supports at both ends.

结合图3,下面以MEMS器件机械结构的整表封装为例,利用上述测量系统来对MEMS器件机械结构加工应力的温度特性以及封装应力的温度特性进行测量,具体步骤如下:Combined with Figure 3, the following is an example of the entire table package of the MEMS device mechanical structure, using the above-mentioned measurement system to measure the temperature characteristics of the processing stress of the MEMS device mechanical structure and the temperature characteristics of the packaging stress. The specific steps are as follows:

步骤一,将双端固支音叉谐振器3和机械结构2集成在一起形成MEMS芯片1,在每个MEMS芯片1内,至少四个双端固支音叉谐振器3均匀布置在机械结构2四周,且呈对称布置的两个双端固支音叉谐振器3互相垂直布置。在每一个MEMS芯片1内,双端固支音叉谐振器3均匀布置在MEMS结构2四周。对于大尺寸MEMS芯片1,可在MEMS结构2的四周多布置些双端固支音叉谐振器3,对于小尺寸MEMS芯片1,可在MEMS结构2的四周少布置些双端固支音叉谐振器3,但至少布置四个双端固支音叉谐振器3,如图1所示,分别测试平面内两个方向的残余应力温度特性。为了能更好地测量残余应力温度特性,在机械结构2的四周可以均匀布置八个双端固支音叉谐振器3,且每个方向上对称的两个双端固支音叉谐振器3相互垂直布置,如图2所示。Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and the two double-ended fixed-branched tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other. In each MEMS chip 1 , the tuning fork resonator 3 with double-terminal fixed support is evenly arranged around the MEMS structure 2 . For the large-sized MEMS chip 1, more double-terminal fixed-branched tuning fork resonators 3 can be arranged around the MEMS structure 2, and for small-sized MEMS chips 1, less double-terminal fixed-branched tuning fork resonators can be arranged around the MEMS structure 2 3, but at least four double-ended fixed-branched tuning fork resonators 3 are arranged, as shown in Figure 1, to test the residual stress temperature characteristics in two directions in the plane respectively. In order to better measure the residual stress temperature characteristics, eight double-ended fixed-branched tuning fork resonators 3 can be evenly arranged around the mechanical structure 2, and two double-ended fixed-branched tuning fork resonators 3 symmetrical in each direction are perpendicular to each other layout, as shown in Figure 2.

步骤二,如图3的(a),微机械加工工艺结束后,在晶圆4上形成成百上千个MEMS芯片1,将晶圆4安装在温控探针台上,在晶圆4上不同的区域选取多个MEMS芯片1进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片1上的双端固支音叉谐振器3的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器3的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,温度,温度调节方式可采用梯度变温或连续变温方式,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器3在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2, as shown in (a) of Figure 3, after the end of the micromachining process, hundreds or thousands of MEMS chips 1 are formed on the wafer 4, and the wafer 4 is mounted on a temperature-controlled probe station, and the wafer 4 Select a plurality of MEMS chips 1 in different areas on the Internet for testing: first, through a scanning electron microscope, test the beam width and beam length of the double-terminal fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode and detection electrode of the double-ended fixed-branched tuning fork resonator 3 are connected to the measurement and control circuit to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The temperature and temperature adjustment methods can be gradient temperature or temperature adjustment. Continuously variable temperature mode, using probes, measurement and control circuits and frequency measurement circuits to test the frequency f 0,k,i (T) of the double-ended fixed-branched tuning fork resonator 3 at different temperatures, f 0,k,i (T )Into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (1)

式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片1的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片1上双端固支音叉谐振器3的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器3的梁宽和梁长,M为双端固支音叉谐振器3的等效质量。In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support Equivalent mass of tuning fork resonator 3.

步骤三,如图3的(b),采用划片工艺将晶圆4上的MEMS芯片1进行分离,得到单个MEMS芯片1,将划片后的MEMS芯片1安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器3在不同温度下的频率f1,k,i(T),将f1,k,i(T)代入公式计算出划片工艺产生的应力在不同温度下的值σ1,k,i(T),再采用最小二乘法进行残余应力σ1,k,i(T)和温度T的多项式拟合,得到σ1,k,i(T)的温度函数:Step 3, as shown in Figure 3 (b), the MEMS chip 1 on the wafer 4 is separated by a dicing process to obtain a single MEMS chip 1, and the diced MEMS chip 1 is installed on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, use the probe, the measurement and control circuit and the frequency measurement circuit to test the frequencies f 1,k,i (T) of these double-ended fixed-branched tuning fork resonators 3 at different temperatures, and set f 1,k, i (T) into the formula Calculate the value σ 1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 1,k,i (T) and temperature T, and obtain σ 1,k,i (T) as a function of temperature:

σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (2)σ 1,k,i (T)=σ 1,k,i (0)+a 1,1 T+a 1,2 T 2 +…+a 1,n T n (2)

式中,σ1,k,i(0)为0℃时划片工艺产生残余应力的拟合值,a1,1、a1,2、a1,n分别为划片工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a 1,1 , a 1,2 , and a 1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order, and n-order temperature coefficients.

步骤四,如图3的(c),采用贴片工艺将步骤三得到的MEMS芯片1粘接到管壳5内,将贴片后的MEMS芯片1安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器3在不同温度下的频率f2,k,i(T),将f2,k,i(T)代入公式计算出贴片工艺产生的应力在不同温度下的值σ2,k,i(T),再采用最小二乘法进行残余应力σ2,k,i(T)和温度T的多项式拟合,得到σ2,k,i(T)的温度函数:Step 4, as shown in (c) of Fig. 3, the MEMS chip 1 obtained in step 3 is bonded into the shell 5 by the patch process, the MEMS chip 1 after the patch is installed on the temperature control probe station, and the temperature is adjusted. Control the temperature of the probe station, use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f 2,k,i (T) of these double-ended fixed-branched tuning fork resonators 3 at different temperatures, f 2,k,i ( T) into the formula Calculate the value σ 2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 2,k,i (T) and temperature T, and get σ 2,k,i (T) as a function of temperature:

σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (3)σ 2,k,i (T)=σ 2,k,i (0)+a 2,1 T+a 2,2 T 2 +…+a 2,n T n (3)

式中,σ2,k,i(0)为0℃时贴片工艺产生残余应力的拟合值,a2,1、a2,2、a2,n分别为贴片工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a 2,1 , a 2,2 , and a 2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order, and n-order temperature coefficients.

步骤五,如图3的(d),采用引线键合工艺,利用金属引线6实现MEMS芯片1与管壳5之间的电互连,采用无应力安装方式将管壳5安装固定,利用金丝焊接管壳5上的金属引脚和测控电路上对应的金属引脚,将引线键合后的MEMS芯片1安装在卡具上,卡具固定在温控箱内,采用测控电路和测频电路测试引线键合工艺后双端固支音叉谐振器3频率f3,k,i(T),将f3,k,i(T)代入公式计算出引线键合工艺产生的应力在不同温度下的值σ3,k,i(T),再采用最小二乘法进行残余应力σ3,k,i(T)和温度T的多项式拟合,得到σ3,k,i(T)的温度函数:Step 5, as shown in (d) of Figure 3, adopts the wire bonding process, utilizes the metal lead 6 to realize the electrical interconnection between the MEMS chip 1 and the tube shell 5, adopts a stress-free installation method to install and fix the tube shell 5, and uses a gold Wire-weld the metal pins on the shell 5 and the corresponding metal pins on the measurement and control circuit, install the wire-bonded MEMS chip 1 on the jig, fix the jig in the temperature control box, and use the measurement and control circuit and frequency measurement After the circuit test wire bonding process, the frequency f 3,k,i (T) of the double-ended fixed-supported tuning fork resonator 3, substitute f 3,k,i (T) into the formula Calculate the value σ 3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 3,k,i (T) and temperature T, Obtain the temperature function of σ 3,k,i (T):

σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn (4)σ 3,k,i (T)=σ 3,k,i (0)+a 3,1 T+a 3,2 T 2 +…+a 3,n T n (4)

式中,σ3,k,i(0)为0℃时引线键合工艺产生残余应力的拟合值,a3,1、a3,2、a3,n分别为引线键合工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a 3,1 , a 3,2 , and a 3,n are the residual stresses generated by the wire bonding process, respectively First, second and nth order temperature coefficients of stress.

步骤六,如图3的(e),采用封帽工艺,将盖板7与管壳5键合在一起,采用无应力安装方式将管壳5安装固定,利用金丝焊接管壳5上的金属引脚和测控电路上对应的金属引脚,将封帽后的MEMS芯片1,安装在温控箱内,改变温控箱内的温度,采用采用双端固支谐振器3测控电路和测频电路,测试双端固支音叉谐振器3频率f4,k,i(T),将f4,k,i(T)代入公式计算出封帽工艺产生的应力在不同温度下的值σ4,k,i(T),再采用最小二乘法进行残余应力σ4,k,i(T)和T进行多项式拟合,得到σ4,k,i(T)的温度函数:Step 6, as shown in (e) of Figure 3, use the capping process to bond the cover plate 7 and the tube shell 5 together, install and fix the tube shell 5 in a stress-free installation method, and use gold wire to weld the tube shell 5 The metal pins and the corresponding metal pins on the measurement and control circuit install the capped MEMS chip 1 in the temperature control box, change the temperature in the temperature control box, and adopt the double-terminal fixed resonator 3 measurement and control circuit and measurement frequency circuit, test the frequency f 4,k,i (T) of the double-ended fixed-branched tuning fork resonator 3, and substitute f 4,k,i (T) into the formula Calculate the value σ 4,k,i (T) of the stress generated by the capping process at different temperatures, and then use the least square method to perform polynomial fitting on the residual stress σ 4,k,i (T) and T to obtain σ 4,k,i (T) temperature function:

σ4,k,i(T)=σ4,k,i(0)+a4,1T+a4,2T2+…+a4,nTn (5)σ 4,k,i (T)=σ 4,k,i (0)+a 4,1 T+a 4,2 T 2 +...+a 4,n T n (5)

式中,σ4,k,i(0)为0℃时封帽工艺产生残余应力的拟合值,a4,1、a4,2、a4,n分别为封帽工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 4,k,i (0) is the fitting value of the residual stress generated by the capping process at 0°C, a 4,1 , a 4,2 , and a 4,n are the residual stresses generated by the capping process respectively First-order, second-order, and n-order temperature coefficients.

上述测试过程表明,在实施其中某一道工艺的前后,如划片、贴片等,分别测试双端固支音叉谐振器3的频率,结合双端固支音叉谐振器3的梁宽和梁长,即可获得该工艺产生应力温度特性。在封装工艺的优化设计中,可直接利用双端固支音叉谐振器,采用该测量方法测量每道封装工艺产生的封装应力以及封装应力的温度特性,从而有助于封装工艺的优化,降低封装应力,具体方案如下。The above test process shows that before and after one of the processes is implemented, such as scribing, patching, etc., the frequency of the double-ended fixed-branched tuning fork resonator 3 is tested, and the beam width and beam length of the double-ended fixed-branched tuning fork resonator 3 are tested. , the stress-temperature characteristics of the process can be obtained. In the optimization design of the packaging process, the double-ended fixed-branched tuning fork resonator can be directly used, and the measurement method can be used to measure the packaging stress generated by each packaging process and the temperature characteristics of the packaging stress, which will help optimize the packaging process and reduce the packaging cost. Stress, the specific scheme is as follows.

结合图3的(a)至(d),本发明MEMS器件残余应力温度特性的测量方法,步骤如下:In conjunction with (a) to (d) of Fig. 3, the method for measuring the residual stress temperature characteristic of the MEMS device of the present invention, the steps are as follows:

步骤一,将双端固支音叉谐振器3和机械结构2集成在一起形成MEMS芯片1,在每个MEMS芯片1内,至少四个双端固支音叉谐振器3均匀布置在机械结构2四周,且呈对称布置的两个双端固支音叉谐振器3互相垂直布置;Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other;

步骤二,微机械加工工艺结束后,在晶圆4上形成成百上千个MEMS芯片1,将晶圆4安装在温控探针台上,在晶圆4上不同的区域选取多个MEMS芯片1进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片1上的双端固支音叉谐振器3的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器3的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器3在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2: After the micromachining process is completed, form hundreds or thousands of MEMS chips 1 on the wafer 4, install the wafer 4 on a temperature-controlled probe station, and select multiple MEMS chips in different areas on the wafer 4 Chip 1 is tested: firstly, through a scanning electron microscope, test the beam width and beam length of the double-end fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode, the detection electrode and the measurement and control circuit are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the double-ended fixed-supported tuning fork is tested by using the probe, measurement and control circuit and frequency measurement circuit. Frequency f 0,k,i (T) of resonator 3 at different temperatures, substitute f 0,k,i (T) into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (1)

式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片1的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片1上双端固支音叉谐振器3的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器3的梁宽和梁长,M为双端固支音叉谐振器3的等效质量;In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support The equivalent mass of the tuning fork resonator 3;

步骤三,采用划片工艺将晶圆4上的MEMS芯片1进行分离,得到单个MEMS芯片1,将划片后的MEMS芯片1安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器3在不同温度下的频率f1,k,i(T),将f1,k,i(T)代入公式计算出划片工艺产生的应力在不同温度下的值σ1,k,i(T),再采用最小二乘法进行残余应力σ1,k,i(T)和温度T的多项式拟合,得到σ1,k,i(T)的温度函数:Step 3: Separate the MEMS chip 1 on the wafer 4 by a dicing process to obtain a single MEMS chip 1, install the diced MEMS chip 1 on a temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, Utilize the probe, measurement and control circuit and frequency measurement circuit to test the frequency f 1,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f 1,k,i (T) into the formula Calculate the value σ 1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 1,k,i (T) and temperature T, and obtain σ 1,k,i (T) as a function of temperature:

σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (2)σ 1,k,i (T)=σ 1,k,i (0)+a 1,1 T+a 1,2 T 2 +…+a 1,n T n (2)

式中,σ1,k,i(0)为0℃时划片工艺产生残余应力的拟合值,a1,1、a1,2、a1,n分别为划片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a 1,1 , a 1,2 , and a 1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients;

步骤四,采用贴片工艺将步骤三得到的MEMS芯片1粘接到管壳5内,将贴片后的MEMS芯片1安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器3在不同温度下的频率f2,k,i(T),将f2,k,i(T)代入公式计算出贴片工艺产生的应力在不同温度下的值σ2,k,i(T),再采用最小二乘法进行残余应力σ2,k,i(T)和温度T的多项式拟合,得到σ2,k,i(T)的温度函数:Step 4: Bond the MEMS chip 1 obtained in step 3 into the tube shell 5 by using the patch process, install the MEMS chip 1 after the patch on the temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, and use the probe Needle, measurement and control circuit and frequency measurement circuit test the frequency f 2,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f 2,k,i (T) into the formula Calculate the value σ 2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 2,k,i (T) and temperature T, and get σ 2,k,i (T) as a function of temperature:

σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (3)σ 2,k,i (T)=σ 2,k,i (0)+a 2,1 T+a 2,2 T 2 +…+a 2,n T n (3)

式中,σ2,k,i(0)为0℃时贴片工艺产生残余应力的拟合值,a2,1、a2,2、a2,n分别为贴片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a 2,1 , a 2,2 , and a 2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order and n-order temperature coefficients;

步骤五,采用引线键合工艺,利用金属引线6实现MEMS芯片1与管壳5之间的电互连,采用无应力安装方式将管壳5安装固定,利用金丝焊接管壳5上的金属引脚和测控电路上对应的金属引脚,将引线键合后的MEMS芯片1安装在卡具上,卡具固定在温控箱内,采用测控电路和测频电路测试引线键合工艺后双端固支音叉谐振器3频率f3,k,i(T),将f3,k,i(T)代入公式计算出引线键合工艺产生的应力在不同温度下的值σ3,k,i(T),再采用最小二乘法进行残余应力σ3,k,i(T)和温度T的多项式拟合,得到σ3,k,i(T)的温度函数:Step 5, using a wire bonding process, using the metal lead 6 to realize the electrical interconnection between the MEMS chip 1 and the shell 5, using a stress-free installation method to install and fix the shell 5, and welding the metal on the shell 5 with a gold wire Pins and the corresponding metal pins on the measurement and control circuit, the wire-bonded MEMS chip 1 is installed on the fixture, the fixture is fixed in the temperature control box, and the measurement and control circuit and the frequency measurement circuit are used to test the wire bonding process. The frequency f 3,k,i (T) of the end-fixed tuning fork resonator 3, substitute f 3,k,i (T) into the formula Calculate the value σ 3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 3,k,i (T) and temperature T, Obtain the temperature function of σ 3,k,i (T):

σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn (4)σ 3,k,i (T)=σ 3,k,i (0)+a 3,1 T+a 3,2 T 2 +…+a 3,n T n (4)

式中,σ3,k,i(0)为0℃时引线键合工艺产生残余应力的拟合值,a3,1、a3,2、a3,n分别为引线键合工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a 3,1 , a 3,2 , and a 3,n are the residual stresses generated by the wire bonding process, respectively First, second and nth order temperature coefficients of stress.

结合图3的(a)至(c),本发明MEMS器件残余应力温度特性的测量方法,步骤如下:In conjunction with (a) to (c) of Fig. 3, the measuring method of MEMS device residual stress temperature characteristic of the present invention, the steps are as follows:

步骤一,将双端固支音叉谐振器3和机械结构2集成在一起形成MEMS芯片1,在每个MEMS芯片1内,至少四个双端固支音叉谐振器3均匀布置在机械结构2四周,且呈对称布置的两个双端固支音叉谐振器3互相垂直布置;Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other;

步骤二,微机械加工工艺结束后,在晶圆4上形成成百上千个MEMS芯片1,将晶圆4安装在温控探针台上,在晶圆4上不同的区域选取多个MEMS芯片1进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片1上的双端固支音叉谐振器3的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器3的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器3在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2: After the micromachining process is completed, form hundreds or thousands of MEMS chips 1 on the wafer 4, install the wafer 4 on a temperature-controlled probe station, and select multiple MEMS chips in different areas on the wafer 4 Chip 1 is tested: firstly, through a scanning electron microscope, test the beam width and beam length of the double-end fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode, the detection electrode and the measurement and control circuit are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the double-ended fixed-supported tuning fork is tested by using the probe, measurement and control circuit and frequency measurement circuit. Frequency f 0,k,i (T) of resonator 3 at different temperatures, substitute f 0,k,i (T) into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (1)

式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片1的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片1上双端固支音叉谐振器3的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器3的梁宽和梁长,M为双端固支音叉谐振器3的等效质量;In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support The equivalent mass of the tuning fork resonator 3;

步骤三,采用划片工艺将晶圆4上的MEMS芯片1进行分离,得到单个MEMS芯片1,将划片后的MEMS芯片1安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器3在不同温度下的频率f1,k,i(T),将f1,k,i(T)代入公式计算出划片工艺产生的应力在不同温度下的值σ1,k,i(T),再采用最小二乘法进行残余应力σ1,k,i(T)和温度T的多项式拟合,得到σ1,k,i(T)的温度函数:Step 3: Separate the MEMS chip 1 on the wafer 4 by a dicing process to obtain a single MEMS chip 1, install the diced MEMS chip 1 on a temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, Utilize the probe, measurement and control circuit and frequency measurement circuit to test the frequency f 1,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f 1,k,i (T) into the formula Calculate the value σ 1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 1,k,i (T) and temperature T, and obtain σ 1,k,i (T) as a function of temperature:

σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (2)σ 1,k,i (T)=σ 1,k,i (0)+a 1,1 T+a 1,2 T 2 +…+a 1,n T n (2)

式中,σ1,k,i(0)为0℃时划片工艺产生残余应力的拟合值,a1,1、a1,2、a1,n分别为划片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a 1,1 , a 1,2 , and a 1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients;

步骤四,采用贴片工艺将步骤三得到的MEMS芯片1粘接到管壳5内,将贴片后的MEMS芯片1安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器3在不同温度下的频率f2,k,i(T),将f2,k,i(T)代入公式计算出贴片工艺产生的应力在不同温度下的值σ2,k,i(T),再采用最小二乘法进行残余应力σ2,k,i(T)和温度T的多项式拟合,得到σ2,k,i(T)的温度函数:Step 4: Bond the MEMS chip 1 obtained in step 3 into the tube shell 5 by using the patch process, install the MEMS chip 1 after the patch on the temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, and use the probe Needle, measurement and control circuit and frequency measurement circuit test the frequency f 2,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f 2,k,i (T) into the formula Calculate the value σ 2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 2,k,i (T) and temperature T, and get σ 2,k,i (T) as a function of temperature:

σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (3)σ 2,k,i (T)=σ 2,k,i (0)+a 2,1 T+a 2,2 T 2 +…+a 2,n T n (3)

式中,σ2,k,i(0)为0℃时贴片工艺产生残余应力的拟合值,a2,1、a2,2、a2,n分别为贴片工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a 2,1 , a 2,2 , and a 2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order, and n-order temperature coefficients.

结合图3的(a)至(b),本发明MEMS器件残余应力温度特性的测量方法,步骤如下:In conjunction with (a) to (b) of Fig. 3, the measuring method of MEMS device residual stress temperature characteristic of the present invention, the steps are as follows:

步骤一,将双端固支音叉谐振器3和机械结构2集成在一起形成MEMS芯片1,在每个MEMS芯片1内,至少四个双端固支音叉谐振器3均匀布置在机械结构2四周,且呈对称布置的两个双端固支音叉谐振器3互相垂直布置;Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other;

步骤二,微机械加工工艺结束后,在晶圆4上形成成百上千个MEMS芯片1,将晶圆4安装在温控探针台上,在晶圆4上不同的区域选取多个MEMS芯片1进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片1上的双端固支音叉谐振器3的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器3的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器3在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2: After the micromachining process is completed, form hundreds or thousands of MEMS chips 1 on the wafer 4, install the wafer 4 on a temperature-controlled probe station, and select multiple MEMS chips in different areas on the wafer 4 Chip 1 is tested: firstly, through a scanning electron microscope, test the beam width and beam length of the double-end fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode, the detection electrode and the measurement and control circuit are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the double-ended fixed-supported tuning fork is tested by using the probe, measurement and control circuit and frequency measurement circuit. Frequency f 0,k,i (T) of resonator 3 at different temperatures, substitute f 0,k,i (T) into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (1)

式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片1的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片1上双端固支音叉谐振器3的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器3的梁宽和梁长,M为双端固支音叉谐振器3的等效质量;In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support The equivalent mass of the tuning fork resonator 3;

步骤三,采用划片工艺将晶圆4上的MEMS芯片1进行分离,得到单个MEMS芯片1,将划片后的MEMS芯片1安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器3在不同温度下的频率f1,k,i(T),将f1,k,i(T)代入公式计算出划片工艺产生的应力在不同温度下的值σ1,k,i(T),再采用最小二乘法进行残余应力σ1,k,i(T)和温度T的多项式拟合,得到σ1,k,i(T)的温度函数:Step 3: Separate the MEMS chip 1 on the wafer 4 by a dicing process to obtain a single MEMS chip 1, install the diced MEMS chip 1 on a temperature-controlled probe station, adjust the temperature of the temperature-controlled probe station, Utilize the probe, measurement and control circuit and frequency measurement circuit to test the frequency f 1,k,i (T) of these double-ended fixed-supported tuning fork resonators 3 at different temperatures, and substitute f 1,k,i (T) into the formula Calculate the value σ 1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 1,k,i (T) and temperature T, and obtain σ 1,k,i (T) as a function of temperature:

σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (2)σ 1,k,i (T)=σ 1,k,i (0)+a 1,1 T+a 1,2 T 2 +…+a 1,n T n (2)

式中,σ1,k,i(0)为0℃时划片工艺产生残余应力的拟合值,a1,1、a1,2、a1,n分别为划片工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a 1,1 , a 1,2 , and a 1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order, and n-order temperature coefficients.

结合图3的(a),本发明MEMS器件残余应力温度特性的测量方法,步骤如下:In conjunction with (a) of Fig. 3, the measuring method of MEMS device residual stress temperature characteristic of the present invention, the steps are as follows:

步骤一,将双端固支音叉谐振器3和机械结构2集成在一起形成MEMS芯片1,在每个MEMS芯片1内,至少四个双端固支音叉谐振器3均匀布置在机械结构2四周,且呈对称布置的两个双端固支音叉谐振器3互相垂直布置;Step 1: Integrate the double-terminal fixed-branched tuning fork resonator 3 and the mechanical structure 2 together to form a MEMS chip 1, and in each MEMS chip 1, at least four double-terminal fixed-branched tuning fork resonators 3 are evenly arranged around the mechanical structure 2 , and two double-ended fixed-supported tuning fork resonators 3 arranged symmetrically are arranged perpendicular to each other;

步骤二,微机械加工工艺结束后,在晶圆4上形成成百上千个MEMS芯片1,将晶圆4安装在温控探针台上,在晶圆4上不同的区域选取多个MEMS芯片1进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片1上的双端固支音叉谐振器3的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器3的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器3在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2: After the micromachining process is completed, form hundreds or thousands of MEMS chips 1 on the wafer 4, install the wafer 4 on a temperature-controlled probe station, and select multiple MEMS chips in different areas on the wafer 4 Chip 1 is tested: firstly, through a scanning electron microscope, test the beam width and beam length of the double-end fixed-branched tuning fork resonator 3 on the selected MEMS chip 1; The driving electrode, the detection electrode and the measurement and control circuit are connected to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station, and the double-ended fixed-supported tuning fork is tested by using the probe, measurement and control circuit and frequency measurement circuit. Frequency f 0,k,i (T) of resonator 3 at different temperatures, substitute f 0,k,i (T) into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress:

σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (1)

式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片1的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片1上双端固支音叉谐振器3的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器3的梁宽和梁长,M为双端固支音叉谐振器3的等效质量。In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of MEMS chip 1; i=1,2,...,m, m≥4, i represents the double-terminal fixed support on the same MEMS chip 1 The label of the tuning fork resonator 3; E is the Young’s modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam length of the tuning fork resonator 3 with double-end fixed support, and M is the double-end fixed support Equivalent mass of tuning fork resonator 3.

Claims (5)

1.一种MEMS器件残余应力温度特性的测量方法,将双端固支音叉谐振器(3)和机械结构(2)集成在一起形成MEMS芯片(1),其特征在于还包括以下步骤:1. a kind of measuring method of MEMS device residual stress temperature characteristic, double-end solid support tuning fork resonator (3) and mechanical structure (2) are integrated together to form MEMS chip (1), it is characterized in that also comprising the following steps: 步骤一,在每个MEMS芯片(1)内,至少四个双端固支音叉谐振器(3)均匀布置在机械结构(2)四周,且呈对称布置的两个双端固支音叉谐振器(3)互相垂直布置;Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; 步骤二,微机械加工工艺结束后,在晶圆(4)上形成成百上千个MEMS芯片(1),将晶圆(4)安装在温控探针台上,在晶圆(4)上不同的区域选取多个MEMS芯片(1)进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片(1)上的双端固支音叉谐振器(3)的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器(3)的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器(3)在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f 0, k, i (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f 0, k, i (T) is substituted into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (6) 式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片(1)的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片(1)上双端固支音叉谐振器(3)的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器(3)的梁宽和梁长,M为双端固支音叉谐振器(3)的等效质量;In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively Long, M is the equivalent mass of the double-ended fixed support tuning fork resonator (3); 步骤三,采用划片工艺将晶圆(4)上的MEMS芯片(1)进行分离,得到单个MEMS芯片(1),将划片后的MEMS芯片(1)安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器( 3) 在不同温度下的频率f1,k,i(T),将f1,k,i(T)代入公式计算出划片工艺产生的应力在不同温度下的值σ1,k,i(T),再采用最小二乘法进行残余应力σ1,k,i(T)和温度T的多项式拟合,得到σ1,k,i(T)的温度函数:Step 3, using a dicing process to separate the MEMS chip (1) on the wafer (4) to obtain a single MEMS chip (1), and installing the diced MEMS chip (1) on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f 1,k,i (T) of these double-ended fixed-branched tuning fork resonators ( 3 ) at different temperatures, and set f 1, k,i (T) into the formula Calculate the value σ 1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 1,k,i (T) and temperature T, and obtain σ 1,k,i (T) as a function of temperature: σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (7)σ 1,k,i (T)=σ 1,k,i (0)+a 1,1 T+a 1,2 T 2 +…+a 1,n T n (7) 式中,σ1,k,i(0)为0℃时划片工艺产生残余应力的拟合值,a1,1、a1,2、a1,n分别为划片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a 1,1 , a 1,2 , and a 1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients; 步骤四,采用贴片工艺将步骤三得到的MEMS芯片(1)粘接到管壳(5)内,将贴片后的MEMS芯片(1)安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器(3)在不同温度下的频率f2,k,i(T),将f2,k,i(T)代入公式计算出贴片工艺产生的应力在不同温度下的值σ2,k,i(T),再采用最小二乘法进行残余应力σ2,k,i(T)和温度T的多项式拟合,得到σ2,k,i(T)的温度函数:Step 4: Bond the MEMS chip (1) obtained in Step 3 into the tube shell (5) by using the SMT process, install the MEMS chip (1) after the patch on the temperature control probe station, adjust the temperature control probe Needle table temperature, using probes, measurement and control circuits and frequency measurement circuits to test the frequency f 2,k,i (T) of these double-ended fixed-supported tuning fork resonators (3) at different temperatures, f 2,k,i ( T) into the formula Calculate the value σ 2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 2,k,i (T) and temperature T, and get σ 2,k,i (T) as a function of temperature: σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (8)σ 2,k,i (T)=σ 2,k,i (0)+a 2,1 T+a 2,2 T 2 +…+a 2,n T n (8) 式中,σ2,k,i(0)为0℃时贴片工艺产生残余应力的拟合值,a2,1、a2,2、a2,n分别为贴片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a 2,1 , a 2,2 , and a 2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order and n-order temperature coefficients; 步骤五,采用引线键合工艺,利用金属引线(6)实现MEMS芯片(1)与管壳(5)之间的电互连,采用无应力安装方式将管壳(5)安装固定,利用金丝焊接管壳(5)上的金属引脚和测控电路上对应的金属引脚,将引线键合后的MEMS芯片(1)安装在卡具上,卡具固定在温控箱内,采用测控电路和测频电路测试引线键合工艺后双端固支音叉谐振器3频率f3,k,i(T),将f3,k,i(T)代入公式计算出引线键合工艺产生的应力在不同温度下的值σ3,k,i(T),再采用最小二乘法进行残余应力σ3,k,i(T)和温度T的多项式拟合,得到σ3,k,i(T)的温度函数:Step five, using wire bonding process, using metal leads (6) to realize the electrical interconnection between the MEMS chip (1) and the shell (5), using a stress-free installation method to install and fix the shell (5), using gold Wire-weld the metal pins on the shell (5) and the corresponding metal pins on the measurement and control circuit, install the wire-bonded MEMS chip (1) on the jig, fix the jig in the temperature control box, and use the measurement and control Circuit and frequency measuring circuit test wire bonding process double-ended fixed support tuning fork resonator 3 frequency f 3,k,i (T), put f 3,k,i (T) into the formula Calculate the value σ 3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 3,k,i (T) and temperature T, Obtain the temperature function of σ 3,k,i (T): σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn (9)σ 3,k,i (T)=σ 3,k,i (0)+a 3,1 T+a 3,2 T 2 +…+a 3,n T n (9) 式中,σ3,k,i(0)为0℃时引线键合工艺产生残余应力的拟合值,a3,1、a3,2、a3,n分别为引线键合工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a 3,1 , a 3,2 , and a 3,n are the residual stresses generated by the wire bonding process, respectively The first-order, second-order and n-order temperature coefficients of stress; 步骤六,采用封帽工艺,将盖板(7)与管壳(5)键合在一起,采用无应力安装方式将管壳(5)安装固定,利用金丝焊接管壳(5)上的金属引脚和测控电路上对应的金属引脚,将封帽后的MEMS芯片( 1) ,安装在温控箱内,改变温控箱内的温度,采用双端固支谐振器( 3) 测控电路和测频电路,测试双端固支音叉谐振器( 3) 频率f4,k,i(T),将f4,k,i(T)代入公式计算出封帽工艺产生的应力在不同温度下的值σ4,k,i(T),再采用最小二乘法进行残余应力σ4,k,i(T)和T进行多项式拟合,得到σ4,k,i(T)的温度函数:Step 6: Bond the cover plate (7) and the shell (5) together by using the capping process, install and fix the shell (5) in a stress-free installation method, and use gold wire to weld the shell (5) The metal pins and the corresponding metal pins on the measurement and control circuit, install the capped MEMS chip (1) in the temperature control box, change the temperature in the temperature control box, and use the double-terminal solid support resonator (3) for measurement and control Circuit and frequency measurement circuit, test the frequency f 4,k,i (T) of the double-ended fixed-branched tuning fork resonator ( 3), substitute f 4,k,i (T) into the formula Calculate the value σ 4,k,i (T) of the stress generated by the capping process at different temperatures, and then use the least square method to perform polynomial fitting on the residual stress σ 4,k,i (T) and T to obtain σ 4,k,i (T) temperature function: σ4,k,i(T)=σ4,k,i(0)+a4,1T+a4,2T2+…+a4,nTn (10)σ 4,k,i (T)=σ 4,k,i (0)+a 4,1 T+a 4,2 T 2 +…+a 4,n T n (10) 式中,σ4,k,i(0)为0℃时封帽工艺产生残余应力的拟合值,a4,1、a4,2、a4,n分别为封帽工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 4,k,i (0) is the fitting value of the residual stress generated by the capping process at 0°C, a 4,1 , a 4,2 , and a 4,n are the residual stresses generated by the capping process respectively First-order, second-order, and n-order temperature coefficients. 2.一种MEMS器件残余应力温度特性的测量方法,将双端固支音叉谐振器(3)和机械结构(2)集成在一起形成MEMS芯片(1),其特征在于还包括以下步骤:2. a method for measuring the residual stress temperature characteristics of a MEMS device, which integrates a double-ended tuning fork resonator (3) and a mechanical structure (2) to form a MEMS chip (1), is characterized in that it also includes the following steps: 步骤一,在每个MEMS芯片(1)内,至少四个双端固支音叉谐振器(3)均匀布置在机械结构(2)四周,且呈对称布置的两个双端固支音叉谐振器(3)互相垂直布置;Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; 步骤二,微机械加工工艺结束后,在晶圆(4)上形成成百上千个MEMS芯片(1),将晶圆(4)安装在温控探针台上,在晶圆(4)上不同的区域选取多个MEMS芯片(1)进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片(1)上的双端固支音叉谐振器(3)的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器(3)的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器(3)在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f 0, k, i (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f 0, k, i (T) is substituted into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (6) 式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片(1)的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片(1)上双端固支音叉谐振器(3)的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器(3)的梁宽和梁长,M为双端固支音叉谐振器(3)的等效质量;In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively Long, M is the equivalent mass of the double-ended fixed support tuning fork resonator (3); 步骤三,采用划片工艺将晶圆(4)上的MEMS芯片(1)进行分离,得到单个MEMS芯片(1),将划片后的MEMS芯片(1)安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器( 3) 在不同温度下的频率f1,k,i(T),将f1,k,i(T)代入公式计算出划片工艺产生的应力在不同温度下的值σ1,k,i(T),再采用最小二乘法进行残余应力σ1,k,i(T)和温度T的多项式拟合,得到σ1,k,i(T)的温度函数:Step 3, using a dicing process to separate the MEMS chip (1) on the wafer (4) to obtain a single MEMS chip (1), and installing the diced MEMS chip (1) on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f 1,k,i (T) of these double-ended fixed-branched tuning fork resonators ( 3 ) at different temperatures, and set f 1, k,i (T) into the formula Calculate the value σ 1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 1,k,i (T) and temperature T, and obtain σ 1,k,i (T) as a function of temperature: σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (7)σ 1,k,i (T)=σ 1,k,i (0)+a 1,1 T+a 1,2 T 2 +…+a 1,n T n (7) 式中,σ1,k,i(0)为0℃时划片工艺产生残余应力的拟合值,a1,1、a1,2、a1,n分别为划片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a 1,1 , a 1,2 , and a 1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients; 步骤四,采用贴片工艺将步骤三得到的MEMS芯片(1)粘接到管壳(5)内,将贴片后的MEMS芯片(1)安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器(3)在不同温度下的频率f2,k,i(T),将f2,k,i(T)代入公式计算出贴片工艺产生的应力在不同温度下的值σ2,k,i(T),再采用最小二乘法进行残余应力σ2,k,i(T)和温度T的多项式拟合,得到σ2,k,i(T)的温度函数:Step 4: Bond the MEMS chip (1) obtained in Step 3 into the tube shell (5) by using the SMT process, install the MEMS chip (1) after the patch on the temperature control probe station, adjust the temperature control probe Needle table temperature, using probes, measurement and control circuits and frequency measurement circuits to test the frequency f 2,k,i (T) of these double-ended fixed-supported tuning fork resonators (3) at different temperatures, f 2,k,i ( T) into the formula Calculate the value σ 2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 2,k,i (T) and temperature T, and get σ 2,k,i (T) as a function of temperature: σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (8)σ 2,k,i (T)=σ 2,k,i (0)+a 2,1 T+a 2,2 T 2 +…+a 2,n T n (8) 式中,σ2,k,i(0)为0℃时贴片工艺产生残余应力的拟合值,a2,1、a2,2、a2,n分别为贴片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a 2,1 , a 2,2 , and a 2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order and n-order temperature coefficients; 步骤五,采用引线键合工艺,利用金属引线(6)实现MEMS芯片(1)与管壳(5)之间的电互连,采用无应力安装方式将管壳(5)安装固定,利用金丝焊接管壳(5)上的金属引脚和测控电路上对应的金属引脚,将引线键合后的MEMS芯片(1)安装在卡具上,卡具固定在温控箱内,采用测控电路和测频电路测试引线键合工艺后双端固支音叉谐振器3频率f3,k,i(T),将f3,k,i(T)代入公式计算出引线键合工艺产生的应力在不同温度下的值σ3,k,i(T),再采用最小二乘法进行残余应力σ3,k,i(T)和温度T的多项式拟合,得到σ3,k,i(T)的温度函数:Step five, using wire bonding process, using metal leads (6) to realize the electrical interconnection between the MEMS chip (1) and the shell (5), using a stress-free installation method to install and fix the shell (5), using gold Wire-weld the metal pins on the shell (5) and the corresponding metal pins on the measurement and control circuit, install the wire-bonded MEMS chip (1) on the jig, fix the jig in the temperature control box, and use the measurement and control Circuit and frequency measuring circuit test wire bonding process double-ended fixed support tuning fork resonator 3 frequency f 3,k,i (T), put f 3,k,i (T) into the formula Calculate the value σ 3,k,i (T) of the stress generated by the wire bonding process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 3,k,i (T) and temperature T, Obtain the temperature function of σ 3,k,i (T): σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn (9)σ 3,k,i (T)=σ 3,k,i (0)+a 3,1 T+a 3,2 T 2 +…+a 3,n T n (9) 式中,σ3,k,i(0)为0℃时引线键合工艺产生残余应力的拟合值,a3,1、a3,2、a3,n分别为引线键合工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 3,k,i (0) is the fitting value of the residual stress generated by the wire bonding process at 0°C, and a 3,1 , a 3,2 , and a 3,n are the residual stresses generated by the wire bonding process, respectively First, second and nth order temperature coefficients of stress. 3.一种MEMS器件残余应力温度特性的测量方法,将双端固支音叉谐振器(3)和机械结构(2)集成在一起形成MEMS芯片(1),其特征在于还包括以下步骤:3. a method for measuring the residual stress temperature characteristic of a MEMS device, which integrates a double-ended tuning fork resonator (3) and a mechanical structure (2) to form a MEMS chip (1), is characterized in that it also includes the following steps: 步骤一,在每个MEMS芯片(1)内,至少四个双端固支音叉谐振器(3)均匀布置在机械结构(2)四周,且呈对称布置的两个双端固支音叉谐振器(3)互相垂直布置;Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; 步骤二,微机械加工工艺结束后,在晶圆(4)上形成成百上千个MEMS芯片(1),将晶圆(4)安装在温控探针台上,在晶圆(4)上不同的区域选取多个MEMS芯片(1)进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片(1)上的双端固支音叉谐振器(3)的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器(3)的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器(3)在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f 0, k, i (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f 0, k, i (T) is substituted into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (6) 式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片(1)的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片(1)上双端固支音叉谐振器(3)的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器(3)的梁宽和梁长,M为双端固支音叉谐振器(3)的等效质量;In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structural material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively Long, M is the equivalent mass of the double-ended fixed support tuning fork resonator (3); 步骤三,采用划片工艺将晶圆(4)上的MEMS芯片(1)进行分离,得到单个MEMS芯片(1),将划片后的MEMS芯片(1)安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器( 3) 在不同温度下的频率f1,k,i(T),将f1,k,i(T)代入公式计算出划片工艺产生的应力在不同温度下的值σ1,k,i(T),再采用最小二乘法进行残余应力σ1,k,i(T)和温度T的多项式拟合,得到σ1,k,i(T)的温度函数:Step 3, using a dicing process to separate the MEMS chip (1) on the wafer (4) to obtain a single MEMS chip (1), and installing the diced MEMS chip (1) on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f 1,k,i (T) of these double-ended fixed-branched tuning fork resonators ( 3 ) at different temperatures, and set f 1, k,i (T) into the formula Calculate the value σ 1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 1,k,i (T) and temperature T, and obtain σ 1,k,i (T) as a function of temperature: σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (7)σ 1,k,i (T)=σ 1,k,i (0)+a 1,1 T+a 1,2 T 2 +…+a 1,n T n (7) 式中,σ1,k,i(0)为0℃时划片工艺产生残余应力的拟合值,a1,1、a1,2、a1,n分别为划片工艺产生残余应力的一阶、二阶和n阶温度系数;In the formula, σ 1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a 1,1 , a 1,2 , and a 1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order and n-order temperature coefficients; 步骤四,采用贴片工艺将步骤三得到的MEMS芯片(1)粘接到管壳(5)内,将贴片后的MEMS芯片(1)安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器(3)在不同温度下的频率f2,k,i(T),将f2,k,i(T)代入公式计算出贴片工艺产生的应力在不同温度下的值σ2,k,i(T),再采用最小二乘法进行残余应力σ2,k,i(T)和温度T的多项式拟合,得到σ2,k,i(T)的温度函数:Step 4: Bond the MEMS chip (1) obtained in Step 3 into the tube shell (5) by using the SMT process, install the MEMS chip (1) after the patch on the temperature control probe station, adjust the temperature control probe Needle table temperature, using probes, measurement and control circuits and frequency measurement circuits to test the frequency f 2,k,i (T) of these double-ended fixed-supported tuning fork resonators (3) at different temperatures, f 2,k,i ( T) into the formula Calculate the value σ 2,k,i (T) of the stress generated by the patch process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 2,k,i (T) and temperature T, and get σ 2,k,i (T) as a function of temperature: σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (8)σ 2,k,i (T)=σ 2,k,i (0)+a 2,1 T+a 2,2 T 2 +…+a 2,n T n (8) 式中,σ2,k,i(0)为0℃时贴片工艺产生残余应力的拟合值,a2,1、a2,2、a2,n分别为贴片工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 2,k,i (0) is the fitting value of the residual stress generated by the SMT process at 0°C, and a 2,1 , a 2,2 , and a 2,n are the residual stress values generated by the SMT process, respectively. First-order, second-order, and n-order temperature coefficients. 4.一种MEMS器件残余应力温度特性的测量方法,将双端固支音叉谐振器(3)和机械结构(2)集成在一起形成MEMS芯片(1),其特征在于还包括以下步骤:4. a method for measuring the residual stress temperature characteristic of a MEMS device, the double-ended fixed support tuning fork resonator (3) and mechanical structure (2) are integrated together to form the MEMS chip (1), it is characterized in that also comprising the following steps: 步骤一,在每个MEMS芯片(1)内,至少四个双端固支音叉谐振器(3)均匀布置在机械结构(2)四周,且呈对称布置的两个双端固支音叉谐振器(3)互相垂直布置;Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; 步骤二,微机械加工工艺结束后,在晶圆(4)上形成成百上千个MEMS芯片(1),将晶圆(4)安装在温控探针台上,在晶圆(4)上不同的区域选取多个MEMS芯片(1)进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片(1)上的双端固支音叉谐振器(3)的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器(3)的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器(3)在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f 0, k, i (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f 0, k, i (T) is substituted into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (6) 式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片(1)的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片(1)上双端固支音叉谐振器(3)的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器(3)的梁宽和梁长,M为双端固支音叉谐振器(3)的等效质量;In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structure material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively Long, M is the equivalent mass of the double-ended fixed support tuning fork resonator (3); 步骤三,采用划片工艺将晶圆(4)上的MEMS芯片(1)进行分离,得到单个MEMS芯片(1),将划片后的MEMS芯片(1)安装在温控探针台上,调节温控探针台温度,利用探针、测控电路和测频电路测试这些双端固支音叉谐振器( 3) 在不同温度下的频率f1,k,i(T),将f1,k,i(T)代入公式计算出划片工艺产生的应力在不同温度下的值σ1,k,i(T),再采用最小二乘法进行残余应力σ1,k,i(T)和温度T的多项式拟合,得到σ1,k,i(T)的温度函数:Step 3, using a dicing process to separate the MEMS chip (1) on the wafer (4) to obtain a single MEMS chip (1), and installing the diced MEMS chip (1) on a temperature-controlled probe station, Adjust the temperature of the temperature-controlled probe station, and use the probe, measurement and control circuit and frequency measurement circuit to test the frequency f 1,k,i (T) of these double-ended fixed-branched tuning fork resonators ( 3 ) at different temperatures, and set f 1, k,i (T) into the formula Calculate the value σ 1,k,i (T) of the stress generated by the scribing process at different temperatures, and then use the least square method to perform polynomial fitting of the residual stress σ 1,k,i (T) and temperature T, and obtain σ 1,k,i (T) as a function of temperature: σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (7)σ 1,k,i (T)=σ 1,k,i (0)+a 1,1 T+a 1,2 T 2 +…+a 1,n T n (7) 式中,σ1,k,i(0)为0℃时划片工艺产生残余应力的拟合值,a1,1、a1,2、a1,n分别为划片工艺产生残余应力的一阶、二阶和n阶温度系数。In the formula, σ 1,k,i (0) is the fitting value of the residual stress generated by the scribing process at 0°C, and a 1,1 , a 1,2 , and a 1,n are the residual stress values generated by the scribing process, respectively. First-order, second-order, and n-order temperature coefficients. 5.一种MEMS器件残余应力温度特性的测量方法,将双端固支音叉谐振器(3)和机械结构(2)集成在一起形成MEMS芯片(1),其特征在于还包括以下步骤:5. a kind of measuring method of MEMS device residual stress temperature characteristic, double-end solid support tuning fork resonator (3) and mechanical structure (2) are integrated together to form MEMS chip (1), it is characterized in that also comprising the following steps: 步骤一,在每个MEMS芯片(1)内,至少四个双端固支音叉谐振器(3)均匀布置在机械结构(2)四周,且呈对称布置的两个双端固支音叉谐振器(3)互相垂直布置;Step 1, in each MEMS chip (1), at least four double-ended fixed-branched tuning fork resonators (3) are evenly arranged around the mechanical structure (2), and two double-ended fixed-branched tuning fork resonators are symmetrically arranged (3) arranged perpendicular to each other; 步骤二,微机械加工工艺结束后,在晶圆(4)上形成成百上千个MEMS芯片(1),将晶圆(4)安装在温控探针台上,在晶圆(4)上不同的区域选取多个MEMS芯片(1)进行测试:首先通过扫描电子显微镜,测试所挑选MEMS芯片(1)上的双端固支音叉谐振器(3)的梁宽和梁长;然后利用探针及其引线与双端固支音叉谐振器(3)的驱动电极、检测电极和测控电路相连,构成闭环测控回路,根据温控探针台可调节的温度范围设置试验温度范围,利用探针、测控电路和测频电路测试所述双端固支音叉谐振器(3)在不同温度下的频率f0,k,i(T),将f0,k,i(T)代入公式计算不同温度下的加工应力σ0,k,i(T),再采用最小二乘法进行加工应力σ0,k,i(T)和温度T的多项式拟合,得到加工应力的温度函数:Step 2, after the micromachining process is completed, hundreds or thousands of MEMS chips (1) are formed on the wafer (4), and the wafer (4) is mounted on a temperature-controlled probe station, and the wafer (4) Select a plurality of MEMS chips (1) in different areas on the Internet for testing: first, by scanning electron microscopy, test the beam width and beam length of the double-end fixed-supported tuning fork resonator (3) on the selected MEMS chip (1); then use The probe and its leads are connected with the driving electrode, detection electrode and measurement and control circuit of the double-ended fixed-supported tuning fork resonator (3) to form a closed-loop measurement and control circuit. The test temperature range is set according to the adjustable temperature range of the temperature control probe station. The frequency f 0, k, i (T) of the double-ended solid-supported tuning fork resonator (3) at different temperatures is tested by the needle, the measurement and control circuit and the frequency measurement circuit, and f 0, k, i (T) is substituted into the formula Calculate the processing stress σ 0,k,i (T) at different temperatures, and then use the least square method to perform polynomial fitting of the processing stress σ 0,k,i (T) and temperature T to obtain the temperature function of the processing stress: σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)σ 0,k,i (T)=σ 0,k,i (0)+a 0,1 T+a 0,2 T 2 +…+a 0,n T n (6) 式中,σ0,k,i(0)为0℃时加工应力的拟合值,a0,1、a0,2、a0,n分别为加工应力的一阶、二阶和n阶温度系数;式中,k=1,2,…,l,k表示MEMS芯片(1)的标号;i=1,2,…,m,m≥4,i表示同一个MEMS芯片(1)上双端固支音叉谐振器(3)的标号;E为MEMS结构材料的杨氏模量,h为MEMS结构厚度,w、L分别为双端固支音叉谐振器(3)的梁宽和梁长,M为双端固支音叉谐振器(3)的等效质量。In the formula, σ 0,k,i (0) is the fitting value of processing stress at 0°C, a 0,1 , a 0,2 , a 0,n are the first-order, second-order and n-order of processing stress, respectively Temperature coefficient; in the formula, k=1,2,...,l, k represents the label of the MEMS chip (1); i=1,2,...,m, m≥4, i represents the same MEMS chip (1) The label of the double-end fixed-supported tuning fork resonator (3); E is the Young's modulus of the MEMS structural material, h is the thickness of the MEMS structure, w and L are the beam width and beam width of the double-ended fixed-supported tuning fork resonator (3) respectively long, and M is the equivalent mass of the double-ended fixed-supported tuning fork resonator (3).
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