CN105699424B - A kind of measuring method of MEMS device residual stress temperature characterisitic - Google Patents
A kind of measuring method of MEMS device residual stress temperature characterisitic Download PDFInfo
- Publication number
- CN105699424B CN105699424B CN201610122108.7A CN201610122108A CN105699424B CN 105699424 B CN105699424 B CN 105699424B CN 201610122108 A CN201610122108 A CN 201610122108A CN 105699424 B CN105699424 B CN 105699424B
- Authority
- CN
- China
- Prior art keywords
- tuning fork
- temperature
- fork resonator
- stress
- mems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/72—Investigating presence of flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
- G01C25/005—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass initial alignment, calibration or starting-up of inertial devices
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a kind of measuring methods of MEMS device residual stress temperature characterisitic, the mechanical structure of MEMS device and the clamped tuning fork resonator of both-end are integrated on the same chip, there is correlation using the clamped tuning fork resonator frequency of both-end and the axial stress on its beam, by testing the clamped tuning fork resonator frequency of the both-end under different temperatures, the residual stress under different temperatures is obtained, so as to obtain the temperature characterisitic of residual stress.Test method of the present invention is simple, it can be achieved that the measurement for the residual stress temperature characterisitic that MEMS technology generates；The measurement of residual stress temperature characterisitic caused by encapsulation per pass technique can be achieved；It during residual stress temperature characteristic measuring, does not need to dismantle encapsulating structure, MEMS device will not be caused to damage.
Description
Technical field
The invention belongs to MEMS device residual stress test technology, particularly a kind of MEMS device residual stress temperature characterisitic
Measuring method.
Background technology
The mechanical structure of MEMS (Micro-Electro-Mechanical-System, MEMS) device is (for sensitivity
Element) it is processing in encapsulation process, residual stress can be generated, residual stress includes machining stress and encapsulation stress.It is remaining
Stress can influence MEMS device output signal, when particularly residual stress changes, such as residual stress variation with temperature or should
The creep of power will be all reacted in output signal as electronic signals by mechanical structure, so as to make the output of MEMS device
It shifts, reduces MEMS device performance.Therefore, the temperature characterisitic of residual stress control and residual stress is all MEMS devices
Part processes one of factor that must take into consideration with encapsulation.And before Stress Control, it first has to accurately carry out residual stress temperature
Characteristic (the temperature characterisitic of temperature characterisitic and encapsulation stress including machining stress.) measurement.
At present, the angularity of MEMS device residual stress measurement generally use optical device test chip, such as moire interference
Method (Moire Interference Method), laser-holographic interferometry and laser speckle interferometry etc., estimate further according to angularity
It calculates residual stress and (the experimental study machines of glue residual stress detection is bonded in the bonding techniques such as (1) Ma Bin, Ren Jiwen, Zhang Honghai
Tool science and technology, 2005,24 (6):The micro- Raman spectroscopies of such as 736-739. (2) Qiu Yu, Lei Zhenkun, a high billows and its
Application in the detection of micro-structure residual stress, mechanical strength, 2004,26 (4):389-392.).First, which needs
Expensive optical device；Secondly, the integrated stress that wafer can be obtained by this method is horizontal, can not learn local stress point
Cloth situation；Third carries out scribing to wafer and obtains single MEMS chip, since MEMS chip size is in millimeter magnitude, with wafer
Compare, the sag of MEMS chip greatly reduces, at this time using optical means carry out residual stress measurement when there are larger
Measurement error in addition when sag is approximately zero, results of stress can not be obtained；4th, packaged MEMS devices
When part needs measurement remnant stress, it is necessary to encapsulating structure is dismantled, destroys encapsulating structure, and easily causes MEMS structure damage, from
And influence the correct measurement of residual stress.During the measurement of residual stress temperature characterisitic, above-mentioned technical problem, Er Qiexu are equally existed
The test equipment wanted is then increasingly complex.
Invention content
For prior art defect, present invention aims at provide a kind of convenience, high sensitivity, high-precision MEMS device
The measuring method of residual stress temperature characterisitic.
Realize the object of the invention technical solution be：A kind of measurement side of MEMS device residual stress temperature characterisitic
Method, step are as follows：
The clamped tuning fork resonator of both-end and mechanical structure are integrated and to form MEMS chip, each by step 1
In MEMS chip, the clamped tuning fork resonator of at least four both-ends is evenly arranged in mechanical structure surrounding, and two be arranged symmetrically
The orthogonal arrangement of a clamped tuning fork resonator of both-end；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips on wafer, wafer is installed
On temperature control probe platform, different regions is chosen multiple MEMS chips and is tested on wafer：It is shown first by scanning electron
The deck-siding and beam length of the clamped tuning fork resonator of both-end on MEMS chip are selected in micro mirror, test；Then using probe and its draw
Line is connected with driving electrodes, detecting electrode and the telemetry circuit of the clamped tuning fork resonator of both-end, forms closed loop measurement and control circuit, according to
The adjustable temperature range setting test temperature range of temperature control probe platform, institute is tested using probe, telemetry circuit and frequency measurement circuit
State the frequency f of the clamped tuning fork resonator of both-end at different temperatures0,k,i(T), by f0,k,i(T) formula is substituted intoCalculate the machining stress σ under different temperatures0,k,i(T),
Stress σ is processed using least square method again0,k,i(T) and the fitting of a polynomial of temperature T, the temperature letter of machining stress is obtained
Number：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nRespectively the single order of machining stress,
Second order and n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip；I=1,2 ..., m, m >=4, i are represented
The label of the clamped tuning fork resonator of both-end on same MEMS chip；E is the Young's modulus of MEMS structure material, and h is tied for MEMS
Structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator of both-end, and M is the equivalent matter of the clamped tuning fork resonator of both-end
Amount；
MEMS chip on wafer using scribing process is detached, single MEMS chip is obtained, by scribing by step 3
MEMS chip afterwards is mounted on temperature control probe platform, is adjusted temperature control probe platform temperature, is utilized probe, telemetry circuit and frequency measurement circuit
Test the frequency f of the clamped tuning fork resonator of these both-ends at different temperatures1,k,i(T), by f1,k,i(T) formula is substituted intoCalculate the value of the stress of scribing process generation at different temperatures
σ1,k,i(T), then using least square method residual stress σ is carried out1,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained1,k,i(T)
Temperature funtion：
σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn
In formula, σ1,k,i(0) be 0 DEG C when scribing process generate residual stress match value, a1,1、a1,2、a1,nRespectively scribing
Technique generates single order, second order and the n rank temperatures coefficient of residual stress；
The MEMS chip that step 3 obtains is adhered in shell, by the MEMS after patch by step 4 using paster technique
Chip is mounted on temperature control probe platform, adjusts temperature control probe platform temperature, these are tested using probe, telemetry circuit and frequency measurement circuit
The frequency f of the clamped tuning fork resonator of both-end at different temperatures2,k,i(T), by f2,k,i(T) formula is substituted intoCalculate the value σ of the stress of paster technique generation at different temperatures2,k,i
(T), then using least square method residual stress σ is carried out2,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained2,k,i(T) temperature
Function：
σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn
In formula, σ2,k,i(0) be 0 DEG C when paster technique generate residual stress match value, a2,1、a2,2、a2,nRespectively patch
Technique generates single order, second order and the n rank temperatures coefficient of residual stress；
Step 5 using lead key closing process, is realized the electrical interconnection between MEMS chip and shell using metal lead wire, is adopted
Shell is installed with unstressed mounting means and is fixed, is welded using spun gold corresponding on the metal pins and telemetry circuit on shell
MEMS chip after wire bonding is mounted on fixture by metal pins, and fixture is fixed in temperature control box, using telemetry circuit and
The clamped tuning fork resonator frequency f of both-end after frequency measurement circuit test lead bonding technology3,k,i(T), by f3,k,i(T) formula is substituted intoCalculate the stress of lead key closing process generation at different temperatures
Value σ3,k,i(T), then using least square method residual stress σ is carried out3,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained3,k,i
(T) temperature funtion：
σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn
In formula, σ3,k,i(0) be 0 DEG C when lead key closing process generate residual stress match value, a3,1、a3,2、a3,nRespectively
Lead key closing process generates single order, second order and the n rank temperatures coefficient of residual stress；
Using sealing cap technique, cover board and shell are bonded together for step 6, will be managed using unstressed mounting means
Shell installation is fixed, using corresponding metal pins on the metal pins and telemetry circuit on spun gold welding shell, after sealing cap
MEMS chip, in temperature control box, change the temperature in temperature control box, using using the clamped resonator telemetry circuit of both-end and
Frequency measurement circuit, the clamped tuning fork resonator frequency f of test both-end4,k,i(T), by f4,k,i(T) formula is substituted intoCalculate the value of the stress of sealing cap technique generation at different temperatures
σ4,k,i(T), then using least square method residual stress σ is carried out4,k,i(T) and T carries out fitting of a polynomial, obtains σ4,k,i(T) temperature
Spend function：
σ4,k,i(T)=σ4,k,i(0)+a4,1T+a4,2T2+…+a4,nTn (10)
In formula, σ4,k,i(0) sealing cap technique generates the match value of residual stress, a when being 0 DEG C4,1、a4,2、a4,nRespectively sealing cap
Technique generates single order, second order and the n rank temperatures coefficient of residual stress.
It is special that the present invention can also measure residual stress temperature caused by each step of MEMS device processing technology step
Property, it is above-mentioned steps one, two；Step 1: two, three；Step 1: two, three, four and Step 1: two, three, four, five difference shapes
Into the technical solution of each procedure of processing test residual stress temperature characterisitic.
Compared with prior art, the present invention its remarkable advantage：(1) test method is simple, it can be achieved that MEMS technology generated
The measurement of residual stress temperature characterisitic.(2) measurement of residual stress temperature characterisitic caused by encapsulation per pass technique can be achieved.
(3) it during residual stress temperature characteristic measuring, does not need to dismantle encapsulating structure, MEMS device will not be caused to damage.(4) may be used
Directly using the clamped tuning fork resonator of both-end, the encapsulation stress temperature characterisitic that per pass packaging technology generates is measured, as encapsulation work
The foundation of skill optimization.(5) it can measure in real time and online.
The present invention is described in further detail below in conjunction with the accompanying drawings.
Description of the drawings
Fig. 1 is MEMS chip the first structure diagram in MEMS device residual stress measuring method of the present invention.
Fig. 2 is second of structure diagram of MEMS chip in MEMS device residual stress measuring method of the present invention.
Fig. 3 is the stress test flow chart of the present invention.
Specific embodiment
Since the mechanical structure thickness of MEMS device is generally 2~3 microns or tens microns, much smaller than planar dimension, because
This can ignore residual stress gradient on thickness direction.A kind of axial direction using in the clamped tuning fork resonator frequency of both-end and its beam
Stress has correlation, the temperature characterisitic of the clamped tuning fork resonator of both-end by being mutually perpendicular to arrangement, so as to obtain MEMS devices
Residual stress temperature characterisitic in part plane.
The present invention can measure it by the measuring system of MEMS device residual stress temperature characterisitic, the system packet
The clamped tuning fork resonator 3 of both-end, temperature control probe platform, probe, test circuit are included, it is humorous which includes the clamped tuning fork of both-end
Shake the telemetry circuit and frequency measurement circuit of device 3, and the mechanical structure 2 of the clamped tuning fork resonator 3 of the both-end and MEMS device is integrated
MEMS chip 1 is formed together, and in each MEMS chip 1, the clamped tuning fork resonator 3 of at least four both-ends is evenly arranged in machine
2 surrounding of tool structure, and (even number both-end is clamped for the orthogonal arrangement of the clamped tuning fork resonator 3 of two both-ends being arranged symmetrically
Tuning fork resonator is set as, two clamped sounds of both-end of opposite position after the clamped tuning fork resonator of odd number both-end is uniformly distributed
The orthogonal arrangement of resonator is pitched, and remaining one is parallel with a wherein adjacent clamped tuning fork resonator of both-end)；MEMS
Chip 1 is mounted on temperature control probe platform, and by scanning electron microscope, the clamped sound of both-end on MEMS chip 1 is selected in test
Pitch the deck-siding and beam length of resonator 3；The driving electrodes of the clamped tuning fork resonator 3 of both-end, detecting electrode pass through probe and its lead
Closed loop measurement and control circuit is formed with telemetry circuit so that the clamped tuning fork resonator 3 of both-end is with its intrinsic frequency resonance；Frequency measurement circuit is examined
The detection electric voltage frequency of the telemetry circuit of the clamped tuning fork resonator 3 of both-end is surveyed, obtains the resonance frequency of the clamped tuning fork resonator 3 of both-end
Rate.
With reference to Fig. 3, below by taking the whole gauge seal of MEMS device mechanical structure dress as an example, using above-mentioned measuring system come to MEMS
The temperature characterisitic of device mechanical structure machining stress and the temperature characterisitic of encapsulation stress measure, and are as follows：
The clamped tuning fork resonator 3 of both-end and mechanical structure 2 are integrated and to form MEMS chip 1, each by step 1
In MEMS chip 1, the clamped tuning fork resonator 3 of at least four both-ends is evenly arranged in 2 surrounding of mechanical structure, and be arranged symmetrically
The clamped 3 orthogonal arrangement of tuning fork resonator of two both-ends.In each MEMS chip 1, the clamped tuning fork resonator 3 of both-end is equal
It is even to be arranged in 2 surrounding of MEMS structure.For large scale MEMS chip 1, it can arrange that a little both-ends are clamped in the surrounding of MEMS structure 2 more
Tuning fork resonator 3 for small size MEMS chip 1, can arrange the clamped tuning fork resonator of a little both-ends less in the surrounding of MEMS structure 2
3, but at least arrange the clamped tuning fork resonator 3 of four both-ends, as shown in Figure 1, the remnants for testing both direction in plane respectively should
Power temperature characterisitic.In order to preferably measurement remnant stress-temperature characteristic, eight can be evenly arranged in the surrounding of mechanical structure 2
The clamped tuning fork resonator 3 of both-end, and the symmetrical clamped tuning fork resonator 3 of two both-ends is mutually perpendicular to arrange in each direction, such as
Shown in Fig. 2.
Step 2 such as (a) of Fig. 3, after miromaching, forms hundreds and thousands of a MEMS cores on wafer 4
Wafer 4 is mounted on temperature control probe platform by piece 1, and different regions is chosen multiple MEMS chips 1 and tested on wafer 4：It is first
Scanning electron microscope is first passed through, the deck-siding and beam length of the clamped tuning fork resonator 3 of both-end on MEMS chip 1 are selected in test；
Then it is connected using driving electrodes, detecting electrode and the telemetry circuit of probe and its lead tuning fork resonator 3 clamped with both-end, structure
Into closed loop measurement and control circuit, test temperature range, temperature, temperature adjusting side are set according to the adjustable temperature range of temperature control probe platform
Gradient alternating temperature or continuous alternating temperature mode can be used in formula, and the clamped sound of both-end is tested using probe, telemetry circuit and frequency measurement circuit
Pitch the frequency f of resonator 3 at different temperatures0,k,i(T), by f0,k,i(T) formula is substituted intoCalculate the machining stress σ under different temperatures0,k,i(T),
Stress σ is processed using least square method again0,k,i(T) and the fitting of a polynomial of temperature T, the temperature letter of machining stress is obtained
Number：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nRespectively the single order of machining stress,
Second order and n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip 1；I=1,2 ..., m, m >=4, i table
Show the label of the clamped tuning fork resonator 3 of both-end on same MEMS chip 1；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator 3 of both-end, and M is the clamped tuning fork resonator 3 of both-end
Equivalent mass.
MEMS chip 1 on wafer 4 such as (b) of Fig. 3, using scribing process is detached, obtained single by step 3
MEMS chip 1, by the MEMS chip 1 after scribing be mounted on temperature control probe platform on, adjust temperature control probe platform temperature, using probe,
Telemetry circuit and frequency measurement circuit test the frequency f of the clamped tuning fork resonator 3 of these both-ends at different temperatures1,k,i(T), will
f1,k,i(T) formula is substituted intoThe stress for calculating scribing process generation exists
Value σ under different temperatures1,k,i(T), then using least square method residual stress σ is carried out1,k,i(T) intend with the multinomial of temperature T
It closes, obtains σ1,k,i(T) temperature funtion：
σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (2)
In formula, σ1,k,i(0) be 0 DEG C when scribing process generate residual stress match value, a1,1、a1,2、a1,nRespectively scribing
Technique generates single order, second order and the n rank temperatures coefficient of residual stress.
The MEMS chip 1 that step 3 obtains such as (c) of Fig. 3, is adhered in shell 5 by step 4 using paster technique, will
MEMS chip 1 after patch is mounted on temperature control probe platform, is adjusted temperature control probe platform temperature, is utilized probe, telemetry circuit and survey
Frequency circuit tests the frequency f of the clamped tuning fork resonator 3 of these both-ends at different temperatures2,k,i(T), by f2,k,i(T) formula is substituted intoCalculate the value σ of the stress of paster technique generation at different temperatures2,k,i
(T), then using least square method residual stress σ is carried out2,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained2,k,i(T) temperature
Function：
σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (3)
In formula, σ2,k,i(0) be 0 DEG C when paster technique generate residual stress match value, a2,1、a2,2、a2,nRespectively patch
Technique generates single order, second order and the n rank temperatures coefficient of residual stress.
Such as (d) of Fig. 3, using lead key closing process, MEMS chip 1 and shell 5 are realized using metal lead wire 6 for step 5
Between electrical interconnection, shell 5 is installed by fixation using unstressed mounting means, utilize spun gold welding shell 5 on metal pins
MEMS chip 1 after wire bonding is mounted on fixture by the corresponding metal pins on telemetry circuit, and fixture is fixed on temperature control
In case, using the clamped 3 frequency f of tuning fork resonator of both-end after telemetry circuit and frequency measurement circuit test lead bonding technology3,k,i(T),
By f3,k,i(T) formula is substituted intoCalculate lead key closing process generation
Stress value σ at different temperatures3,k,i(T), then using least square method residual stress σ is carried out3,k,i(T) and temperature T it is more
Item formula fitting, obtains σ3,k,i(T) temperature funtion：
σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn (4)
In formula, σ3,k,i(0) be 0 DEG C when lead key closing process generate residual stress match value, a3,1、a3,2、a3,nRespectively
Lead key closing process generates single order, second order and the n rank temperatures coefficient of residual stress.
Step 6 such as (e) of Fig. 3, using sealing cap technique, cover board 7 and shell 5 is bonded together, using unstressed peace
Shell 5 is installed fixation by dress mode, is drawn using corresponding metal on the metal pins and telemetry circuit on spun gold welding shell 5
Foot by the MEMS chip 1 after sealing cap, in temperature control box, changes the temperature in temperature control box, using using the clamped resonance of both-end
3 telemetry circuit of device and frequency measurement circuit, the clamped 3 frequency f of tuning fork resonator of test both-end4,k,i(T), by f4,k,i(T) formula is substituted intoCalculate the value of the stress of sealing cap technique generation at different temperatures
σ4,k,i(T), then using least square method residual stress σ is carried out4,k,i(T) and T carries out fitting of a polynomial, obtains σ4,k,i(T) temperature
Spend function：
σ4,k,i(T)=σ4,k,i(0)+a4,1T+a4,2T2+…+a4,nTn (5)
In formula, σ4,k,i(0) sealing cap technique generates the match value of residual stress, a when being 0 DEG C4,1、a4,2、a4,nRespectively sealing cap
Technique generates single order, second order and the n rank temperatures coefficient of residual stress.
Above-mentioned test process shows before and after wherein certain one of technique is implemented, such as scribing, patch, and test is double respectively
The frequency of clamped tuning fork resonator 3 is held, with reference to the deck-siding and beam length of the clamped tuning fork resonator 3 of both-end, you can obtain technique production
Raw stress-temperature characteristic.In the optimization design of packaging technology, the clamped tuning fork resonator of both-end can be directly utilized, using the measurement
Method measures the encapsulation stress of per pass packaging technology generation and the temperature characterisitic of encapsulation stress, so as to contribute to packaging technology
Optimization, reduces encapsulation stress, and concrete scheme is as follows.
With reference to (a) to (d) of Fig. 3, the measuring method of MEMS device residual stress temperature characterisitic of the present invention, step is as follows：
The clamped tuning fork resonator 3 of both-end and mechanical structure 2 are integrated and to form MEMS chip 1, each by step 1
In MEMS chip 1, the clamped tuning fork resonator 3 of at least four both-ends is evenly arranged in 2 surrounding of mechanical structure, and be arranged symmetrically
The clamped 3 orthogonal arrangement of tuning fork resonator of two both-ends；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips 1, by wafer 4 on wafer 4
On temperature control probe platform, different regions is chosen multiple MEMS chips 1 and is tested on wafer 4：Pass through scanning first
The deck-siding and beam length of the clamped tuning fork resonator 3 of both-end on MEMS chip 1 are selected in electron microscope, test；Then spy is utilized
Driving electrodes, detecting electrode and the telemetry circuit of needle and its lead tuning fork resonator 3 clamped with both-end are connected, and form closed loop measurement and control
Circuit sets test temperature range according to the adjustable temperature range of temperature control probe platform, utilizes probe, telemetry circuit and frequency measurement electricity
Drive test tries the frequency f of the clamped tuning fork resonator 3 of both-end at different temperatures0,k,i(T), by f0,k,i(T) formula is substituted intoCalculate the machining stress σ under different temperatures0,k,i(T),
Stress σ is processed using least square method again0,k,i(T) and the fitting of a polynomial of temperature T, the temperature letter of machining stress is obtained
Number：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nRespectively the single order of machining stress,
Second order and n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip 1；I=1,2 ..., m, m >=4, i table
Show the label of the clamped tuning fork resonator 3 of both-end on same MEMS chip 1；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator 3 of both-end, and M is the clamped tuning fork resonator 3 of both-end
Equivalent mass；
MEMS chip 1 on wafer 4 using scribing process is detached, obtains single MEMS chip 1 by step 3, will
MEMS chip 1 after scribing is mounted on temperature control probe platform, is adjusted temperature control probe platform temperature, is utilized probe, telemetry circuit and survey
Frequency circuit tests the frequency f of the clamped tuning fork resonator 3 of these both-ends at different temperatures1,k,i(T), by f1,k,i(T) formula is substituted intoCalculate the value of the stress of scribing process generation at different temperatures
σ1,k,i(T), then using least square method residual stress σ is carried out1,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained1,k,i(T)
Temperature funtion：
σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (2)
In formula, σ1,k,i(0) be 0 DEG C when scribing process generate residual stress match value, a1,1、a1,2、a1,nRespectively scribing
Technique generates single order, second order and the n rank temperatures coefficient of residual stress；
The MEMS chip 1 that step 3 obtains is adhered in shell 5, after patch by step 4 using paster technique
MEMS chip 1 is mounted on temperature control probe platform, adjusts temperature control probe platform temperature, is surveyed using probe, telemetry circuit and frequency measurement circuit
Try the frequency f of the clamped tuning fork resonator 3 of these both-ends at different temperatures2,k,i(T), by f2,k,i(T) formula is substituted intoCalculate the value σ of the stress of paster technique generation at different temperatures2,k,i
(T), then using least square method residual stress σ is carried out2,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained2,k,i(T) temperature
Function：
σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (3)
In formula, σ2,k,i(0) be 0 DEG C when paster technique generate residual stress match value, a2,1、a2,2、a2,nRespectively patch
Technique generates single order, second order and the n rank temperatures coefficient of residual stress；
Step 5 using lead key closing process, realizes that the electricity between MEMS chip 1 and shell 5 is mutual using metal lead wire 6
Even, shell 5 is installed by fixation using unstressed mounting means, utilizes the metal pins and telemetry circuit on spun gold welding shell 5
Upper corresponding metal pins, the MEMS chip 1 after wire bonding is mounted on fixture, and fixture is fixed in temperature control box, is used
The clamped 3 frequency f of tuning fork resonator of both-end after telemetry circuit and frequency measurement circuit test lead bonding technology3,k,i(T), by f3,k,i(T)
Substitute into formulaThe stress of lead key closing process generation is calculated not
Value σ under synthermal3,k,i(T), then using least square method residual stress σ is carried out3,k,i(T) and the fitting of a polynomial of temperature T,
Obtain σ3,k,i(T) temperature funtion：
σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn (4)
In formula, σ3,k,i(0) be 0 DEG C when lead key closing process generate residual stress match value, a3,1、a3,2、a3,nRespectively
Lead key closing process generates single order, second order and the n rank temperatures coefficient of residual stress.
With reference to (a) to (c) of Fig. 3, the measuring method of MEMS device residual stress temperature characterisitic of the present invention, step is as follows：
The clamped tuning fork resonator 3 of both-end and mechanical structure 2 are integrated and to form MEMS chip 1, each by step 1
In MEMS chip 1, the clamped tuning fork resonator 3 of at least four both-ends is evenly arranged in 2 surrounding of mechanical structure, and be arranged symmetrically
The clamped 3 orthogonal arrangement of tuning fork resonator of two both-ends；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips 1, by wafer 4 on wafer 4
On temperature control probe platform, different regions is chosen multiple MEMS chips 1 and is tested on wafer 4：Pass through scanning first
The deck-siding and beam length of the clamped tuning fork resonator 3 of both-end on MEMS chip 1 are selected in electron microscope, test；Then spy is utilized
Driving electrodes, detecting electrode and the telemetry circuit of needle and its lead tuning fork resonator 3 clamped with both-end are connected, and form closed loop measurement and control
Circuit sets test temperature range according to the adjustable temperature range of temperature control probe platform, utilizes probe, telemetry circuit and frequency measurement electricity
Drive test tries the frequency f of the clamped tuning fork resonator 3 of both-end at different temperatures0,k,i(T), by f0,k,i(T) formula is substituted intoCalculate the machining stress σ under different temperatures0,k,i(T),
Stress σ is processed using least square method again0,k,i(T) and the fitting of a polynomial of temperature T, the temperature letter of machining stress is obtained
Number：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nRespectively the single order of machining stress,
Second order and n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip 1；I=1,2 ..., m, m >=4, i table
Show the label of the clamped tuning fork resonator 3 of both-end on same MEMS chip 1；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator 3 of both-end, and M is the clamped tuning fork resonator 3 of both-end
Equivalent mass；
MEMS chip 1 on wafer 4 using scribing process is detached, obtains single MEMS chip 1 by step 3, will
MEMS chip 1 after scribing is mounted on temperature control probe platform, is adjusted temperature control probe platform temperature, is utilized probe, telemetry circuit and survey
Frequency circuit tests the frequency f of the clamped tuning fork resonator 3 of these both-ends at different temperatures1,k,i(T), by f1,k,i(T) formula is substituted intoCalculate the value of the stress of scribing process generation at different temperatures
σ1,k,i(T), then using least square method residual stress σ is carried out1,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained1,k,i(T)
Temperature funtion：
σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (2)
In formula, σ1,k,i(0) be 0 DEG C when scribing process generate residual stress match value, a1,1、a1,2、a1,nRespectively scribing
Technique generates single order, second order and the n rank temperatures coefficient of residual stress；
The MEMS chip 1 that step 3 obtains is adhered in shell 5, after patch by step 4 using paster technique
MEMS chip 1 is mounted on temperature control probe platform, adjusts temperature control probe platform temperature, is surveyed using probe, telemetry circuit and frequency measurement circuit
Try the frequency f of the clamped tuning fork resonator 3 of these both-ends at different temperatures2,k,i(T), by f2,k,i(T) formula is substituted intoCalculate the value σ of the stress of paster technique generation at different temperatures2,k,i
(T), then using least square method residual stress σ is carried out2,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained2,k,i(T) temperature
Function：
σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (3)
In formula, σ2,k,i(0) be 0 DEG C when paster technique generate residual stress match value, a2,1、a2,2、a2,nRespectively patch
Technique generates single order, second order and the n rank temperatures coefficient of residual stress.
With reference to (a) to (b) of Fig. 3, the measuring method of MEMS device residual stress temperature characterisitic of the present invention, step is as follows：
The clamped tuning fork resonator 3 of both-end and mechanical structure 2 are integrated and to form MEMS chip 1, each by step 1
In MEMS chip 1, the clamped tuning fork resonator 3 of at least four both-ends is evenly arranged in 2 surrounding of mechanical structure, and be arranged symmetrically
The clamped 3 orthogonal arrangement of tuning fork resonator of two both-ends；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips 1, by wafer 4 on wafer 4
On temperature control probe platform, different regions is chosen multiple MEMS chips 1 and is tested on wafer 4：Pass through scanning first
The deck-siding and beam length of the clamped tuning fork resonator 3 of both-end on MEMS chip 1 are selected in electron microscope, test；Then spy is utilized
Driving electrodes, detecting electrode and the telemetry circuit of needle and its lead tuning fork resonator 3 clamped with both-end are connected, and form closed loop measurement and control
Circuit sets test temperature range according to the adjustable temperature range of temperature control probe platform, utilizes probe, telemetry circuit and frequency measurement electricity
Drive test tries the frequency f of the clamped tuning fork resonator 3 of both-end at different temperatures0,k,i(T), by f0,k,i(T) formula is substituted intoCalculate the machining stress σ under different temperatures0,k,i(T),
Stress σ is processed using least square method again0,k,i(T) and the fitting of a polynomial of temperature T, the temperature letter of machining stress is obtained
Number：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nRespectively the single order of machining stress,
Second order and n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip 1；I=1,2 ..., m, m >=4, i table
Show the label of the clamped tuning fork resonator 3 of both-end on same MEMS chip 1；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator 3 of both-end, and M is the clamped tuning fork resonator 3 of both-end
Equivalent mass；
MEMS chip 1 on wafer 4 using scribing process is detached, obtains single MEMS chip 1 by step 3, will
MEMS chip 1 after scribing is mounted on temperature control probe platform, is adjusted temperature control probe platform temperature, is utilized probe, telemetry circuit and survey
Frequency circuit tests the frequency f of the clamped tuning fork resonator 3 of these both-ends at different temperatures1,k,i(T), by f1,k,i(T) formula is substituted intoCalculate the value of the stress of scribing process generation at different temperatures
σ1,k,i(T), then using least square method residual stress σ is carried out1,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained1,k,i(T)
Temperature funtion：
σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (2)
In formula, σ1,k,i(0) be 0 DEG C when scribing process generate residual stress match value, a1,1、a1,2、a1,nRespectively scribing
Technique generates single order, second order and the n rank temperatures coefficient of residual stress.
With reference to (a) of Fig. 3, the measuring method of MEMS device residual stress temperature characterisitic of the present invention, step is as follows：
The clamped tuning fork resonator 3 of both-end and mechanical structure 2 are integrated and to form MEMS chip 1, each by step 1
In MEMS chip 1, the clamped tuning fork resonator 3 of at least four both-ends is evenly arranged in 2 surrounding of mechanical structure, and be arranged symmetrically
The clamped 3 orthogonal arrangement of tuning fork resonator of two both-ends；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips 1, by wafer 4 on wafer 4
On temperature control probe platform, different regions is chosen multiple MEMS chips 1 and is tested on wafer 4：Pass through scanning first
The deck-siding and beam length of the clamped tuning fork resonator 3 of both-end on MEMS chip 1 are selected in electron microscope, test；Then spy is utilized
Driving electrodes, detecting electrode and the telemetry circuit of needle and its lead tuning fork resonator 3 clamped with both-end are connected, and form closed loop measurement and control
Circuit sets test temperature range according to the adjustable temperature range of temperature control probe platform, utilizes probe, telemetry circuit and frequency measurement electricity
Drive test tries the frequency f of the clamped tuning fork resonator 3 of both-end at different temperatures0,k,i(T), by f0,k,i(T) formula is substituted intoCalculate the machining stress σ under different temperatures0,k,i(T),
Stress σ is processed using least square method again0,k,i(T) and the fitting of a polynomial of temperature T, the temperature letter of machining stress is obtained
Number：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (1)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nRespectively the single order of machining stress,
Second order and n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip 1；I=1,2 ..., m, m >=4, i table
Show the label of the clamped tuning fork resonator 3 of both-end on same MEMS chip 1；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator 3 of both-end, and M is the clamped tuning fork resonator 3 of both-end
Equivalent mass.
Claims (5)
1. a kind of measuring method of MEMS device residual stress temperature characterisitic ties the clamped tuning fork resonator of both-end (3) and machinery
Structure (2) integrates to form MEMS chip (1), it is characterised in that further comprising the steps of：
Step 1, in each MEMS chip (1), the clamped tuning fork resonator of at least four both-ends (3) is evenly arranged in mechanical knot
Structure (2) surrounding, and two orthogonal arrangements of the clamped tuning fork resonator of both-end (3) being arranged symmetrically；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips (1), by wafer on wafer (4)
(4) on temperature control probe platform, different regions is chosen multiple MEMS chips (1) and is tested on wafer (4)：It is logical first
Electron microscope is over-scanned, the deck-siding and beam length of the clamped tuning fork resonator of both-end (3) on MEMS chip (1) are selected in test；
Then it is connected using probe and its lead with driving electrodes, detecting electrode and the telemetry circuit of the clamped tuning fork resonator of both-end (3),
Closed loop measurement and control circuit is formed, test temperature range is set according to the adjustable temperature range of temperature control probe platform, utilizes probe, observing and controlling
Circuit and frequency measurement circuit test the frequency f of the clamped tuning fork resonator of both-end (3) at different temperatures0,k,i(T), by f0,k,i
(T) formula is substituted intoCalculate the processing under different temperatures
Stress σ0,k,i(T), then using least square method it is processed stress σ0,k,i(T) and the fitting of a polynomial of temperature T it, is processed
The temperature funtion of stress：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nThe respectively single order of machining stress, second order
With n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip (1)；I=1,2 ..., m, m >=4, i are represented
The label of the clamped tuning fork resonator of both-end (3) on same MEMS chip (1)；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator of both-end (3), and M is the clamped tuning fork resonator of both-end
(3) equivalent mass；
MEMS chip (1) on wafer (4) using scribing process is detached, obtains single MEMS chip (1) by step 3,
By the MEMS chip (1) after scribing on temperature control probe platform, temperature control probe platform temperature is adjusted, utilizes probe, telemetry circuit
The frequency f of the clamped tuning fork resonator of these both-ends (3) at different temperatures is tested with frequency measurement circuit1,k,i(T), by f1,k,i(T)
Substitute into formulaThe stress of scribing process generation is calculated in not equality of temperature
Value σ under degree1,k,i(T), then using least square method residual stress σ is carried out1,k,i(T) and the fitting of a polynomial of temperature T it, obtains
σ1,k,i(T) temperature funtion：
σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (7)
In formula, σ1,k,i(0) be 0 DEG C when scribing process generate residual stress match value, a1,1、a1,2、a1,nRespectively scribing process
Generate single order, second order and the n rank temperatures coefficient of residual stress；
Step 4, the MEMS chip for being obtained step 3 using paster technique (1) is adhered in shell (5), after patch
MEMS chip (1) adjusts temperature control probe platform temperature, utilizes probe, telemetry circuit and frequency measurement circuit on temperature control probe platform
Test the frequency f of the clamped tuning fork resonator of these both-ends (3) at different temperatures2,k,i(T), by f2,k,i(T) formula is substituted intoCalculate the value σ of the stress of paster technique generation at different temperatures2,k,i
(T), then using least square method residual stress σ is carried out2,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained2,k,i(T) temperature
Function：
σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (8)
In formula, σ2,k,i(0) be 0 DEG C when paster technique generate residual stress match value, a2,1、a2,2、a2,nRespectively paster technique
Generate single order, second order and the n rank temperatures coefficient of residual stress；
Step 5 using lead key closing process, realizes that the electricity between MEMS chip (1) and shell (5) is mutual using metal lead wire (6)
Even, shell (5) is installed using unstressed mounting means and fixed, utilize the metal pins on spun gold welding shell (5) and observing and controlling
Corresponding metal pins on circuit, by the MEMS chip (1) after wire bonding on fixture, fixture is fixed on temperature control box
It is interior, using the clamped 3 frequency f of tuning fork resonator of both-end after telemetry circuit and frequency measurement circuit test lead bonding technology3,k,i(T), will
f3,k,i(T) formula is substituted intoCalculate lead key closing process generation
The value σ of stress at different temperatures3,k,i(T), then using least square method residual stress σ is carried out3,k,i(T) and temperature T it is multinomial
Formula is fitted, and obtains σ3,k,i(T) temperature funtion：
σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn (9)
In formula, σ3,k,i(0) be 0 DEG C when lead key closing process generate residual stress match value, a3,1、a3,2、a3,nRespectively lead
Bonding technology generates single order, second order and the n rank temperatures coefficient of residual stress；
Using sealing cap technique, cover board (7) and shell (5) are bonded together for step 6, using unstressed mounting means by shell
(5) installation is fixed, using corresponding metal pins on the metal pins and telemetry circuit on spun gold welding shell (5), by sealing cap
MEMS chip (1) afterwards in temperature control box, is changed the temperature in temperature control box, is surveyed using the clamped resonator of both-end (3)
Circuit and frequency measurement circuit are controlled, tests the clamped tuning fork resonator of both-end (3) frequency f4,k,i(T), by f4,k,i(T) formula is substituted intoCalculate the value of the stress of sealing cap technique generation at different temperatures
σ4,k,i(T), then using least square method residual stress σ is carried out4,k,i(T) and T carries out fitting of a polynomial, obtains σ4,k,i(T) temperature
Spend function：
σ4,k,i(T)=σ4,k,i(0)+a4,1T+a4,2T2+…+a4,nTn (10)
In formula, σ4,k,i(0) sealing cap technique generates the match value of residual stress, a when being 0 DEG C4,1、a4,2、a4,nRespectively sealing cap technique
Generate single order, second order and the n rank temperatures coefficient of residual stress.
2. a kind of measuring method of MEMS device residual stress temperature characterisitic ties the clamped tuning fork resonator of both-end (3) and machinery
Structure (2) integrates to form MEMS chip (1), it is characterised in that further comprising the steps of：
Step 1, in each MEMS chip (1), the clamped tuning fork resonator of at least four both-ends (3) is evenly arranged in mechanical knot
Structure (2) surrounding, and two orthogonal arrangements of the clamped tuning fork resonator of both-end (3) being arranged symmetrically；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips (1), by wafer on wafer (4)
(4) on temperature control probe platform, different regions is chosen multiple MEMS chips (1) and is tested on wafer (4)：It is logical first
Electron microscope is over-scanned, the deck-siding and beam length of the clamped tuning fork resonator of both-end (3) on MEMS chip (1) are selected in test；
Then it is connected using probe and its lead with driving electrodes, detecting electrode and the telemetry circuit of the clamped tuning fork resonator of both-end (3),
Closed loop measurement and control circuit is formed, test temperature range is set according to the adjustable temperature range of temperature control probe platform, utilizes probe, observing and controlling
Circuit and frequency measurement circuit test the frequency f of the clamped tuning fork resonator of both-end (3) at different temperatures0,k,i(T), by f0,k,i
(T) formula is substituted intoCalculate the processing under different temperatures
Stress σ0,k,i(T), then using least square method it is processed stress σ0,k,i(T) and the fitting of a polynomial of temperature T it, is processed
The temperature funtion of stress：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nThe respectively single order of machining stress, second order
With n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip (1)；I=1,2 ..., m, m >=4, i are represented
The label of the clamped tuning fork resonator of both-end (3) on same MEMS chip (1)；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator of both-end (3), and M is the clamped tuning fork resonator of both-end
(3) equivalent mass；
MEMS chip (1) on wafer (4) using scribing process is detached, obtains single MEMS chip (1) by step 3,
By the MEMS chip (1) after scribing on temperature control probe platform, temperature control probe platform temperature is adjusted, utilizes probe, telemetry circuit
The frequency f of the clamped tuning fork resonator of these both-ends (3) at different temperatures is tested with frequency measurement circuit1,k,i(T), by f1,k,i(T)
Substitute into formulaThe stress of scribing process generation is calculated in not equality of temperature
Value σ under degree1,k,i(T), then using least square method residual stress σ is carried out1,k,i(T) and the fitting of a polynomial of temperature T it, obtains
σ1,k,i(T) temperature funtion：
σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (7)
In formula, σ1,k,i(0) be 0 DEG C when scribing process generate residual stress match value, a1,1、a1,2、a1,nRespectively scribing process
Generate single order, second order and the n rank temperatures coefficient of residual stress；
Step 4, the MEMS chip for being obtained step 3 using paster technique (1) is adhered in shell (5), after patch
MEMS chip (1) adjusts temperature control probe platform temperature, utilizes probe, telemetry circuit and frequency measurement circuit on temperature control probe platform
Test the frequency f of the clamped tuning fork resonator of these both-ends (3) at different temperatures2,k,i(T), by f2,k,i(T) formula is substituted intoCalculate the value σ of the stress of paster technique generation at different temperatures2,k,i
(T), then using least square method residual stress σ is carried out2,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained2,k,i(T) temperature
Function：
σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (8)
In formula, σ2,k,i(0) be 0 DEG C when paster technique generate residual stress match value, a2,1、a2,2、a2,nRespectively paster technique
Generate single order, second order and the n rank temperatures coefficient of residual stress；
Step 5 using lead key closing process, realizes that the electricity between MEMS chip (1) and shell (5) is mutual using metal lead wire (6)
Even, shell (5) is installed using unstressed mounting means and fixed, utilize the metal pins on spun gold welding shell (5) and observing and controlling
Corresponding metal pins on circuit, by the MEMS chip (1) after wire bonding on fixture, fixture is fixed on temperature control box
It is interior, using the clamped 3 frequency f of tuning fork resonator of both-end after telemetry circuit and frequency measurement circuit test lead bonding technology3,k,i(T), will
f3,k,i(T) formula is substituted intoCalculate lead key closing process generation
The value σ of stress at different temperatures3,k,i(T), then using least square method residual stress σ is carried out3,k,i(T) and temperature T it is multinomial
Formula is fitted, and obtains σ3,k,i(T) temperature funtion：
σ3,k,i(T)=σ3,k,i(0)+a3,1T+a3,2T2+…+a3,nTn (9)
In formula, σ3,k,i(0) be 0 DEG C when lead key closing process generate residual stress match value, a3,1、a3,2、a3,nRespectively lead
Bonding technology generates single order, second order and the n rank temperatures coefficient of residual stress.
3. a kind of measuring method of MEMS device residual stress temperature characterisitic ties the clamped tuning fork resonator of both-end (3) and machinery
Structure (2) integrates to form MEMS chip (1), it is characterised in that further comprising the steps of：
Step 1, in each MEMS chip (1), the clamped tuning fork resonator of at least four both-ends (3) is evenly arranged in mechanical knot
Structure (2) surrounding, and two orthogonal arrangements of the clamped tuning fork resonator of both-end (3) being arranged symmetrically；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips (1), by wafer on wafer (4)
(4) on temperature control probe platform, different regions is chosen multiple MEMS chips (1) and is tested on wafer (4)：It is logical first
Electron microscope is over-scanned, the deck-siding and beam length of the clamped tuning fork resonator of both-end (3) on MEMS chip (1) are selected in test；
Then it is connected using probe and its lead with driving electrodes, detecting electrode and the telemetry circuit of the clamped tuning fork resonator of both-end (3),
Closed loop measurement and control circuit is formed, test temperature range is set according to the adjustable temperature range of temperature control probe platform, utilizes probe, observing and controlling
Circuit and frequency measurement circuit test the frequency f of the clamped tuning fork resonator of both-end (3) at different temperatures0,k,i(T), by f0,k,i
(T) formula is substituted intoCalculate the processing under different temperatures
Stress σ0,k,i(T), then using least square method it is processed stress σ0,k,i(T) and the fitting of a polynomial of temperature T it, is processed
The temperature funtion of stress：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nThe respectively single order of machining stress, second order
With n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip (1)；I=1,2 ..., m, m >=4, i are represented
The label of the clamped tuning fork resonator of both-end (3) on same MEMS chip (1)；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator of both-end (3), and M is the clamped tuning fork resonator of both-end
(3) equivalent mass；
MEMS chip (1) on wafer (4) using scribing process is detached, obtains single MEMS chip (1) by step 3,
By the MEMS chip (1) after scribing on temperature control probe platform, temperature control probe platform temperature is adjusted, utilizes probe, telemetry circuit
The frequency f of the clamped tuning fork resonator of these both-ends (3) at different temperatures is tested with frequency measurement circuit1,k,i(T), by f1,k,i(T)
Substitute into formulaThe stress of scribing process generation is calculated in not equality of temperature
Value σ under degree1,k,i(T), then using least square method residual stress σ is carried out1,k,i(T) and the fitting of a polynomial of temperature T it, obtains
σ1,k,i(T) temperature funtion：
σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (7)
In formula, σ1,k,i(0) be 0 DEG C when scribing process generate residual stress match value, a1,1、a1,2、a1,nRespectively scribing process
Generate single order, second order and the n rank temperatures coefficient of residual stress；
Step 4, the MEMS chip for being obtained step 3 using paster technique (1) is adhered in shell (5), after patch
MEMS chip (1) adjusts temperature control probe platform temperature, utilizes probe, telemetry circuit and frequency measurement circuit on temperature control probe platform
Test the frequency f of the clamped tuning fork resonator of these both-ends (3) at different temperatures2,k,i(T), by f2,k,i(T) formula is substituted intoCalculate the value σ of the stress of paster technique generation at different temperatures2,k,i
(T), then using least square method residual stress σ is carried out2,k,i(T) and the fitting of a polynomial of temperature T, σ is obtained2,k,i(T) temperature
Function：
σ2,k,i(T)=σ2,k,i(0)+a2,1T+a2,2T2+…+a2,nTn (8)
In formula, σ2,k,i(0) be 0 DEG C when paster technique generate residual stress match value, a2,1、a2,2、a2,nRespectively paster technique
Generate single order, second order and the n rank temperatures coefficient of residual stress.
4. a kind of measuring method of MEMS device residual stress temperature characterisitic ties the clamped tuning fork resonator of both-end (3) and machinery
Structure (2) integrates to form MEMS chip (1), it is characterised in that further comprising the steps of：
Step 1, in each MEMS chip (1), the clamped tuning fork resonator of at least four both-ends (3) is evenly arranged in mechanical knot
Structure (2) surrounding, and two orthogonal arrangements of the clamped tuning fork resonator of both-end (3) being arranged symmetrically；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips (1), by wafer on wafer (4)
(4) on temperature control probe platform, different regions is chosen multiple MEMS chips (1) and is tested on wafer (4)：It is logical first
Electron microscope is over-scanned, the deck-siding and beam length of the clamped tuning fork resonator of both-end (3) on MEMS chip (1) are selected in test；
Then it is connected using probe and its lead with driving electrodes, detecting electrode and the telemetry circuit of the clamped tuning fork resonator of both-end (3),
Closed loop measurement and control circuit is formed, test temperature range is set according to the adjustable temperature range of temperature control probe platform, utilizes probe, observing and controlling
Circuit and frequency measurement circuit test the frequency f of the clamped tuning fork resonator of both-end (3) at different temperatures0,k,i(T), by f0,k,i
(T) formula is substituted intoCalculate the processing under different temperatures
Stress σ0,k,i(T), then using least square method it is processed stress σ0,k,i(T) and the fitting of a polynomial of temperature T it, is processed
The temperature funtion of stress：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nThe respectively single order of machining stress, second order
With n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip (1)；I=1,2 ..., m, m >=4, i are represented
The label of the clamped tuning fork resonator of both-end (3) on same MEMS chip (1)；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator of both-end (3), and M is the clamped tuning fork resonator of both-end
(3) equivalent mass；
MEMS chip (1) on wafer (4) using scribing process is detached, obtains single MEMS chip (1) by step 3,
By the MEMS chip (1) after scribing on temperature control probe platform, temperature control probe platform temperature is adjusted, utilizes probe, telemetry circuit
The frequency f of the clamped tuning fork resonator of these both-ends (3) at different temperatures is tested with frequency measurement circuit1,k,i(T), by f1,k,i(T)
Substitute into formulaThe stress of scribing process generation is calculated in not equality of temperature
Value σ under degree1,k,i(T), then using least square method residual stress σ is carried out1,k,i(T) and the fitting of a polynomial of temperature T it, obtains
σ1,k,i(T) temperature funtion：
σ1,k,i(T)=σ1,k,i(0)+a1,1T+a1,2T2+…+a1,nTn (7)
In formula, σ1,k,i(0) be 0 DEG C when scribing process generate residual stress match value, a1,1、a1,2、a1,nRespectively scribing process
Generate single order, second order and the n rank temperatures coefficient of residual stress.
5. a kind of measuring method of MEMS device residual stress temperature characterisitic ties the clamped tuning fork resonator of both-end (3) and machinery
Structure (2) integrates to form MEMS chip (1), it is characterised in that further comprising the steps of：
Step 1, in each MEMS chip (1), the clamped tuning fork resonator of at least four both-ends (3) is evenly arranged in mechanical knot
Structure (2) surrounding, and two orthogonal arrangements of the clamped tuning fork resonator of both-end (3) being arranged symmetrically；
Step 2 after miromaching, forms hundreds and thousands of a MEMS chips (1), by wafer on wafer (4)
(4) on temperature control probe platform, different regions is chosen multiple MEMS chips (1) and is tested on wafer (4)：It is logical first
Electron microscope is over-scanned, the deck-siding and beam length of the clamped tuning fork resonator of both-end (3) on MEMS chip (1) are selected in test；
Then it is connected using probe and its lead with driving electrodes, detecting electrode and the telemetry circuit of the clamped tuning fork resonator of both-end (3),
Closed loop measurement and control circuit is formed, test temperature range is set according to the adjustable temperature range of temperature control probe platform, utilizes probe, observing and controlling
Circuit and frequency measurement circuit test the frequency f of the clamped tuning fork resonator of both-end (3) at different temperatures0,k,i(T), by f0,k,i
(T) formula is substituted intoCalculate the processing under different temperatures
Stress σ0,k,i(T), then using least square method it is processed stress σ0,k,i(T) and the fitting of a polynomial of temperature T it, is processed
The temperature funtion of stress：
σ0,k,i(T)=σ0,k,i(0)+a0,1T+a0,2T2+…+a0,nTn (6)
In formula, σ0,k,i(0) be 0 DEG C when machining stress match value, a0,1、a0,2、a0,nThe respectively single order of machining stress, second order
With n rank temperatures coefficient；In formula, k=1,2 ..., l, k represent the label of MEMS chip (1)；I=1,2 ..., m, m >=4, i are represented
The label of the clamped tuning fork resonator of both-end (3) on same MEMS chip (1)；E is the Young's modulus of MEMS structure material, and h is
MEMS structure thickness, w, L are respectively the deck-siding and beam length of the clamped tuning fork resonator of both-end (3), and M is the clamped tuning fork resonator of both-end
(3) equivalent mass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610122108.7A CN105699424B (en) | 2016-03-03 | 2016-03-03 | A kind of measuring method of MEMS device residual stress temperature characterisitic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610122108.7A CN105699424B (en) | 2016-03-03 | 2016-03-03 | A kind of measuring method of MEMS device residual stress temperature characterisitic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105699424A CN105699424A (en) | 2016-06-22 |
| CN105699424B true CN105699424B (en) | 2018-06-12 |
Family
ID=56219990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610122108.7A Active CN105699424B (en) | 2016-03-03 | 2016-03-03 | A kind of measuring method of MEMS device residual stress temperature characterisitic |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105699424B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106225760B (en) * | 2016-06-30 | 2019-04-23 | 广东技术师范学院 | A kind of caused radial heat distortion measurement method of Model For The Bush-axle Type Parts cutting |
| CN106365105A (en) * | 2016-09-24 | 2017-02-01 | 苏州捷研芯纳米科技有限公司 | MEMS technology based gas sensor package and batch processing method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651631A (en) * | 1979-10-02 | 1981-05-09 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Measuring instrument for surface temperature distribution |
| JPH06288948A (en) * | 1993-03-31 | 1994-10-18 | Railway Technical Res Inst | Method for judging soundness of structure |
| CN1828308A (en) * | 2006-04-07 | 2006-09-06 | 东南大学 | On-line testing and analyzing device and method for microelectromechanical system component material parameter |
| CN103292799B (en) * | 2013-05-30 | 2013-12-18 | 南京信息工程大学 | Electric measuring method for vibrating amplitude of silicon micro-electromechanical structure |
| CN104990564B (en) * | 2015-07-01 | 2018-02-06 | 江西理工大学 | A kind of gumming device and method for improving fiber optic coils performance |
-
2016
- 2016-03-03 CN CN201610122108.7A patent/CN105699424B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105699424A (en) | 2016-06-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI289204B (en) | Minute structure inspection device, minute structure inspection method, and minute structure inspection program | |
| Tatar et al. | Stress effects and compensation of bias drift in a MEMS vibratory-rate gyroscope | |
| CN103018651B (en) | On-chip testing system of micro-electromechanical system (MEMS) device and testing method thereof | |
| CN103759814B (en) | Method for the mixing calibration of vibration-measuring sensor multifrequency | |
| CN104535251B (en) | Temperature self-compensating method and measuring mode for double-resonator pressure sensor | |
| CN103582607B (en) | calibration of MEMS sensor | |
| CN103134999B (en) | Standard-static method for measuring piezoelectric coefficient of d15 of piezoelectric materials | |
| CN105940288A (en) | Electro-mechanical miniaturized device for pressure measurements | |
| CN101566510A (en) | Pressure sensor, manufacturing method thereof, and electronic component provided therewith | |
| CN105699424B (en) | A kind of measuring method of MEMS device residual stress temperature characterisitic | |
| CN107817045B (en) | Magnetic coupling resonant frequency detection device and frequency detection method | |
| Wunderle et al. | Reliability of sputtered thin aluminium films under accelerated stress testing by vibration loading and modeling | |
| CN102519351B (en) | Method for measuring warpage of electronic packaging product | |
| CN105784210B (en) | A kind of measurement method and its system of MEMS device residual stress | |
| Ding et al. | A high-resolution resonant torque sensor based on MEMS quartz resonator | |
| Wang et al. | Gamma irradiation effects on surface-micromachined polysilicon resonators | |
| US20190113545A1 (en) | Piezoelectric package-integrated current sensing devices | |
| Onken et al. | High cycle fatigue testing and modelling of sputtered aluminium thin films on vibrating silicon MEMS cantilevers | |
| Li et al. | A 4-channel high-precision real-time pressure test system for irregularly variable high temperature environments | |
| Zorzetti et al. | A wire-based methodology to analyse the nanometric resolution of an RF cavity BPM | |
| CN105758501A (en) | Giant-piezoresistance dual-resonance mass sensor and making method thereof | |
| Husstedt et al. | In-situ measurement of curvature and mechanical stress of packaged silicon | |
| Wu et al. | Hybrid approach to conduct failure prognostics of automotive electronic control unit | |
| Kehrberg et al. | Measuring Young's modulus of polysilicon via cantilever microbeam arrays | |
| Ling et al. | A novel electric field microsensor with low cross-axis coupling interference |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |