CN111964691B - MEMS inertial device sensitive structure frequency testing device and method - Google Patents
MEMS inertial device sensitive structure frequency testing device and method Download PDFInfo
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- CN111964691B CN111964691B CN202010678991.4A CN202010678991A CN111964691B CN 111964691 B CN111964691 B CN 111964691B CN 202010678991 A CN202010678991 A CN 202010678991A CN 111964691 B CN111964691 B CN 111964691B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
Abstract
The invention discloses a frequency testing device and method for a sensitive structure of an MEMS (micro-electromechanical system) inertial device, which comprises an electric XY-axis moving platform (4), a wafer bearing platform (2) and piezoelectric ceramics (3), wherein the piezoelectric ceramics (3) are rigidly connected below the wafer bearing platform (2), and the wafer bearing platform (2) is fixed on the electric XY-axis moving platform (4). The piezoelectric ceramic (3) is driven to vibrate by the signal generator and the power amplifier, the Doppler measuring instrument is aligned to the position of the driving end of one sensitive structure according to the sequence on the sensitive structure of the wafer substrate, the maximum point of the vibration amplitude of the driving end in the sweep frequency period is obtained, and the corresponding frequency is the driving resonance frequency of the sensitive structure. The invention has high efficiency and low cost.
Description
Technical Field
The invention belongs to the technical field of MEMS (micro-electromechanical systems) inertial device sensitive structures, and particularly relates to a method for testing parameters such as driving frequency, detection frequency and the like of the MEMS inertial device sensitive structure.
Background
Parameters such as driving frequency, detection frequency and the like of the sensitive structure of the MEMS inertial device have important significance for evaluating the performance of the device. In order to accurately measure and obtain the parameter values, the conventional test method generally needs to package the sensitive structure and connect the functional circuit to activate for testing.
And after the test, screening the products according to the parameter measurement result, and rejecting unqualified products with out-of-tolerance frequency. The testing method has the defects of time lag, resource waste and the like, and needs to be improved urgently.
Disclosure of Invention
The invention aims to provide a device and a method for testing frequency parameters such as driving frequency, detection frequency and the like of a sensitive structure of an MEMS inertial device, which have high efficiency and low cost.
In order to solve the technical problem, the invention provides a frequency testing device of a sensitive structure of an inertial device based on a Doppler principle, which adopts the following technical scheme:
the frequency testing device for the sensitive structure of the MEMS inertial device comprises an electric XY axis moving platform and a piezoelectric ceramic frequency sweeping device; the piezoelectric ceramic frequency sweeping device comprises a wafer bearing table, piezoelectric ceramic and a metal pressing sheet, wherein the piezoelectric ceramic is rigidly connected below the wafer bearing table, and the wafer bearing table is fixed on an electric XY-axis moving table; the resonant frequency of the piezoelectric ceramic is greater than the frequency interval of the sensitive structure.
The invention provides a frequency testing method of a sensitive structure of an MEMS inertial device based on the device, which comprises the following steps:
step 1: compressing and fixing the wafer substrate to be detected on a wafer bearing platform by using a rigid metal pressing sheet;
step 2: the piezoelectric ceramic is driven to vibrate by a signal generator and a power amplifier, so that the cyclic frequency sweep is realized within the effective range of the frequency parameter to be measured of the sensitive structure with the specified frequency resolution;
and 3, step 3: moving an electric XY-axis moving platform, aligning a Doppler measuring instrument to the position of a driving end of one sensitive structure according to the sequence on the sensitive structure of the wafer substrate, obtaining the vibration amplitude of the driving end in a frequency sweeping period, capturing the maximum point of the vibration amplitude, and determining the corresponding frequency as the driving resonance frequency of the sensitive structure;
and 4, step 4: and (3) repeating the process of the step (3) under the condition of keeping the step (2) unchanged, and sequentially testing all sensitive structures on the wafer substrate, so that the frequency values of all sensitive structures on the wafer substrate can be sequentially obtained.
The simple and reliable wafer level on-chip on-line testing method in the preceding micro-machining production process can accurately measure frequency parameters such as driving frequency, detection frequency and the like, and has the following outstanding advantages and effects:
1) the invention solves the problem of measuring the frequency parameter of a single sensitive structure before packaging, overcomes the defect that the frequency parameter can only be measured after the sensitive structure is packaged with a lead in the traditional measuring method, shortens the production period and avoids the resource waste;
2) the method solves the problem of online measurement of the frequency parameters of the wafer-level sensitive structure, overcomes the defect that the traditional measurement method can only realize the frequency test of a single sensitive structure through splitting, and improves the efficiency.
Drawings
FIG. 1 is a schematic design diagram of a frequency testing device for a sensitive structure of a MEMS inertial device of the present invention;
description of the figures
The wafer comprises a wafer substrate 1, a wafer bearing table 3, piezoelectric ceramics 4, an electric XY axis moving table 5, a metal pressing sheet 6 and a positioning nut.
Detailed Description
The invention is further described below with reference to the figures and examples.
FIG. 1 is a schematic diagram of the design of a frequency testing device for a sensitive structure, the testing device comprises an electric XY-axis moving platform 4 and a piezoelectric ceramic frequency sweeping device, and the piezoelectric ceramic frequency sweeping device comprises a wafer bearing platform 2, piezoelectric ceramics 3, a metal pressing sheet 5 and a positioning nut 6. The piezoelectric ceramics 3 and the wafer bearing platform 2 are rigidly connected, and the piezoelectric ceramics 3 are bonded below the wafer bearing platform 2 by adopting paraffin. The wafer substrate 1 is pressed and fixed on the wafer bearing platform 2 by a rigid metal pressing sheet 5. The wafer stage 2 is fixed to the electric XY-axis moving stage 4 by a positioning nut 6.
The model selection of the motorized XY-axis moving stage 4 is mainly made in consideration of the moving range matched with the size of the wafer substrate 1.
The piezoelectric ceramic 3 is mainly selected in consideration of the frequency interval that the resonant frequency of the piezoelectric ceramic is greater than that of the sensitive structure.
The invention provides a frequency testing method for a sensitive structure of an MEMS (micro-electromechanical system) inertial device based on a frequency testing device for the sensitive structure of the MEMS inertial device.
The invention is further explained by combining a test of the driving frequency (the wafer substrate size is 50mmX50mm square quartz substrate, 30 sensitive structures are arranged, and the driving frequency range is 9-11 KHz) of a quartz tuning fork sensitive structure.
The method for testing the frequency of the sensitive structure of the MEMS inertial device comprises the following steps:
step 1: placing the wafer substrate 1 to be tested on a wafer bearing table 2, and tightly pressing and fixing the wafer substrate 1 on the wafer bearing table 2 by using a rigid metal pressing sheet 5;
step 2: the piezoelectric ceramic 3 (the resonant frequency of the piezoelectric ceramic 3 is 20KHz) is driven to vibrate by the signal generator and the power amplifier, so that the cyclic frequency sweeping with the specified frequency resolution is realized within the effective range of the frequency parameter to be measured of the sensitive structure. The frequency resolution of the signal generator is set to be 10Hz, and the frequency sweeping is carried out at the speed of 10Hz/s within the frequency interval of 9-11 KHz, wherein the period of each frequency sweeping is 200 s.
And step 3: moving an electric XY-axis moving platform 4, aligning a Doppler measuring instrument (CLV 3000 type equipment manufactured by PolyTec company) to the position of a driving end of one sensitive structure according to the sequence of the sensitive structures on the wafer substrate 1, accurately measuring the vibration amplitude of the driving end in a sweep frequency period by using a Doppler principle, capturing the maximum point of the vibration amplitude, wherein the corresponding frequency is the driving resonant frequency of the sensitive structure;
and 4, step 4: and (3) repeating the process in the step (3) under the condition of keeping the step (2) unchanged, and sequentially testing 30 sensitive structures on the wafer substrate, so that the frequency values of all the sensitive structures on the substrate can be sequentially obtained.
Various modifications and alterations of this invention may be made by those skilled in the art without departing from the spirit and scope of this invention. It is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (1)
1. A frequency test method for a sensitive structure of an MEMS inertial device is characterized in that a frequency test device for the sensitive structure of the MEMS inertial device comprises an electric XY-axis moving platform (4) and a piezoelectric ceramic frequency sweeping device; the piezoelectric ceramic frequency sweeping device comprises a wafer bearing table (2), piezoelectric ceramics (3) and a metal pressing sheet (5), wherein the piezoelectric ceramics (3) are rigidly connected below the wafer bearing table (2), and the wafer bearing table (2) is fixed on an electric XY-axis moving table (4);
the resonance frequency of the piezoelectric ceramic (3) is greater than the frequency interval of the sensitive structure;
the frequency test method for the sensitive structure of the MEMS inertial device comprises the following steps:
step 1: pressing and fixing the wafer substrate to be detected on a wafer bearing table (2) by using a metal pressing sheet (5), wherein the wafer substrate is a quartz substrate;
step 2: the piezoelectric ceramic (3) is driven to vibrate by a signal generator and a power amplifier, so that the cyclic frequency sweep is realized within the effective range of the frequency parameter to be measured of the sensitive structure with the specified frequency resolution;
and step 3: moving an electric XY-axis moving platform (4), aligning a Doppler measuring instrument to the position of a driving end of one sensitive structure according to the sequence on the sensitive structure of the wafer substrate (1), obtaining the vibration amplitude of the driving end in a frequency sweeping period, capturing the maximum point of the vibration amplitude, and determining the corresponding frequency as the driving resonance frequency of the sensitive structure;
and 4, step 4: and (3) repeating the process of the step (3) under the condition of keeping the step (2) unchanged, and sequentially completing the test of all sensitive structures on the wafer substrate, so that the frequency values of all sensitive structures on the wafer substrate (1) can be sequentially obtained.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101476970A (en) * | 2009-01-14 | 2009-07-08 | 大连理工大学 | Seat excitation apparatus used for MEMS dynamic characteristics test |
| CN103528782A (en) * | 2013-10-23 | 2014-01-22 | 东北大学 | Thin-walled structure part vibration test device and method based on piezoelectric ceramic vibration exciter |
| CN104535863A (en) * | 2014-12-23 | 2015-04-22 | 上海电机学院 | Piezoelectric property parameter dynamic sweep frequency test device and method |
| CN105318997A (en) * | 2015-11-13 | 2016-02-10 | 南京信息工程大学 | A two-dimensional force-measuring device based on a two-end-fixed quartz tuning fork and a method thereof |
| CN105547619A (en) * | 2015-12-04 | 2016-05-04 | 东北大学 | Method and system for testing high-order modal frequency and high-order modal damping of thin wall member |
| CN206876369U (en) * | 2017-06-30 | 2018-01-12 | 中国石油大学(北京) | The system for testing MEMS component vibration characteristics |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9500669B2 (en) * | 2014-01-15 | 2016-11-22 | Freescale Semiconductor, Inc. | System and method for calibrating an inertial sensor |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101476970A (en) * | 2009-01-14 | 2009-07-08 | 大连理工大学 | Seat excitation apparatus used for MEMS dynamic characteristics test |
| CN103528782A (en) * | 2013-10-23 | 2014-01-22 | 东北大学 | Thin-walled structure part vibration test device and method based on piezoelectric ceramic vibration exciter |
| CN104535863A (en) * | 2014-12-23 | 2015-04-22 | 上海电机学院 | Piezoelectric property parameter dynamic sweep frequency test device and method |
| CN105318997A (en) * | 2015-11-13 | 2016-02-10 | 南京信息工程大学 | A two-dimensional force-measuring device based on a two-end-fixed quartz tuning fork and a method thereof |
| CN105547619A (en) * | 2015-12-04 | 2016-05-04 | 东北大学 | Method and system for testing high-order modal frequency and high-order modal damping of thin wall member |
| CN206876369U (en) * | 2017-06-30 | 2018-01-12 | 中国石油大学(北京) | The system for testing MEMS component vibration characteristics |
Non-Patent Citations (2)
| Title |
|---|
| 一种MEMS微结构谐振频率的测试技术;王晓东等;《传感技术学报》;20061030(第05期);正文第3节 * |
| 低温环境下MEMS微构件的动态特性及测试系统;佘东生等;《光学精密工程》;20101015(第10期);正文第1-2节 * |
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