CN104568236A - Membrane stress testing device and method - Google Patents
Membrane stress testing device and method Download PDFInfo
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- CN104568236A CN104568236A CN201510043465.XA CN201510043465A CN104568236A CN 104568236 A CN104568236 A CN 104568236A CN 201510043465 A CN201510043465 A CN 201510043465A CN 104568236 A CN104568236 A CN 104568236A
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Abstract
The invention relates to an MEMS (micro electro mechanical systems) testing technique, in particular to a membrane stress testing device and method. The device comprises at least two fixing terminals in symmetrical design; each fixing terminal is connected with a fixing beam; the other free end of each fixing beam is connected with one end of a cantilever beam through a fixing beam connecting neck at an included angle; a pointer beam is clamped between the other ends of the cantilever beams through two cantilever beam connecting necks; the pointer beam is close to one cantilever beam and far away from the other cantilever beam; the pointer beam points to a scale; the scale comprises a sacrificial layer formed on a substrate and a membrane to be tested, formed on the sacrificial layer and is provided with a comb-tooth structure used with the pointer beam to read a swing value of the pointer beam. The method is applied to the device; small displacement of the fixing beams is secondarily amplified into swing displacement of the pointer beam through the cantilever beams, a rotating arm and the pointer beam, the swing displacement is acquired directly through the scale, and residual stress of the membrane is solved through a linear-elastic theory equation.
Description
Technical field
The present invention relates to MEMS (micro electro mechanical system) (EMES) measuring technology, be specifically related to a kind of membrane stress proving installation and method.
Background technology
MEMS (micro electro mechanical system) (MEMS, Micro-Electro-Mechanical System) referring to can batch making, integrates micro mechanism, microsensor, micro actuator and signal transacting with control circuit until interface, to communicate and the microdevice of power supply etc. or system.MEMS is an independently intelligent system, and its system dimension is at several millimeters and even less, and its inner structure is generally in micron even nanometer scale.
MEMS (micro electro mechanical system) is the manufacturing technology platform of a kind of advanced person.It grows up based on semiconductor fabrication.MEMS technology have employed a series of prior art and the material such as photoetching, burn into film in semiconductor technology.
Often there is very important residualinternal stress in the film prepared due to MEMS surface micromachined.Residualinternal stress larger in film easily affects important quiet, the dynamic design parameter such as the rigidity of device and resonance frequency, and directly the performance of the designed device of impact, even causes component failure.Technological design and device simulation are measured as accurately to membrane stress and provide necessary foundation.
The method that membrane stress is measured can be divided into directly and indirect two kinds of methods.Direct method is represented as and adopts x-ray instrument and micro-Raman spectrometer to measure acquisition, and this class methods cost is high, is unfavorable for extensively promoting the use of.Indirect method is represented as by measuring sample deformation (displacement and Curvature varying etc.), such as ring structure, diamond lattic structure and pointer rotational structure measure the in-plane displancement of key point, the acoplanarity displacement of key point measured by two-end fixed beam array and semi-girder, but also there are some shortcomings in these methods, such as, 1, due to the distortion of microstructure itself, measuring error is caused to increase.2, the fabrication error such as angle, over etching of the geomery of microstructure, support section and substrate also can affect measuring accuracy.
Summary of the invention
Solve the problems of the technologies described above, the invention provides a kind of membrane stress proving installation and method, can effective customer service defect of the prior art, by the matching structure of precision, reduce the deformation of microstructure own and the error that causes increases, simultaneously by strict symmetrical structure design, reduce microstructure aspects size, error that the angle etc. of support section and substrate brings.
In order to achieve the above object, the technical solution adopted in the present invention is, a kind of membrane stress proving installation, comprise at least two stiff ends axle being claimed to design, each stiff end is connected with a fixed beam, it is that an angle is connected with a semi-girder one end that another free end of each fixed beam connects neck by a fixed beam, the other end of two semi-girders connects neck sandwiched one pointer beam by two semi-girders, described pointer beam near a semi-girder away from another semi-girder, described pointer beam is connected neck and connects part and have a bending angle α with semi-girder, the angular range of the semi-girder of pointer beam and close together is made to be 10 °-90 °, described pointer beam points to a rule, described rule comprises the film to be measured being formed at on-chip sacrifice layer and being formed on sacrifice layer, which is provided with comb structure, for the oscillating quantity coordinating pointer beam to read described pointer beam.
Further, described angle range of degrees is 40 °-90 °.
Further, each semi-girder central region connects neck by a semi-girder and connects a fixing base, and two fixing bases are centrosymmetric distribution, and its symcenter is overlapping with one-piece construction symcenter.
Further, described stiff end number is 2-4.
Further, described pointer beam end is needle-like.
A kind of film stress test method, is applicable to said apparatus, comprises the following steps:
Remove the sacrifice layer below film, symmetrically arranged fixed beam produces telescopic displacement and connects respectively by respective fixed beam the semi-girder that neck passes to correspondence,
Displacement is carried out rotation and is amplified by each semi-girder, and passes to pointer beam by rotating the mode that is centrosymmetric of the displacement after amplifying through pointer beam connection neck, and pointer beam divides the pointer beam connection neck effect planted to be converted to swing displacement to swing offset in rotational symmetry,
Described pointer beam has certain scale value by swinging displacement relative scale chi, reads scale value and the unrelieved stress gone out by linear elastic theory equations in film.
The present invention is by adopting technique scheme, and compared with prior art, tool has the following advantages:
Device of the present invention connects neck, rotating beam connection neck, the connection of pointer beam neck, stiff end by fixed beam, rotating beam, pointer beam, rule, fixed beam.Membrane stress is measured structure on film, is adopted lithographic technique to prepare, one end of fixed beam is connected to stiff end, after sacrifice layer below film is removed, due to the unrelieved stress effect of film inside, the telescopic displacement that fixed beam produces connects neck by fixed beam and passes to rotating beam, displacement is carried out one-level amplification by rotating beam, then displacement after amplification connects neck through pointer beam and passes to pointer beam, connect the effect of neck at the pointer beam be arranged symmetrically with under, displacement secondary is amplified, displacive transformation after secondary amplifies is the swing displacement of pointer beam, the value of pointer beam tip oscillation is read by the scale on rule, the unrelieved stress in film can be solved according to linear elastic theory.Secondary micro-displacement amplification structure designed by the present invention has that structure is simple, displacement equations multiple is high, stress measurement precision advantages of higher, is applicable to very much the unrelieved stress of measurement function film inside.
Approach application of the present invention is in said apparatus, by semi-girder, pivot arm and pointer beam, the smile displacement secondary of fixed beam is zoomed into the swing displacement of pointer beam, and directly obtained by rule, and go out the unrelieved stress in film by linear elastic theory equations.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiments of the invention.
Fig. 2 is the A portion enlarged diagram of Fig. 1.
Fig. 3 is the B portion enlarged diagram of Fig. 1.
Fig. 4 is the C portion enlarged diagram of Fig. 1.
Fig. 5 is the one-level displacement equations schematic diagram of embodiments of the invention.
Fig. 6 is the secondary displacement equations schematic diagram of embodiments of the invention.
Embodiment
Now the present invention is further described with embodiment by reference to the accompanying drawings.
As a specific embodiment, as shown in Figure 1, a kind of membrane stress proving installation of the present invention, all prepared on substrate by ICP lithographic technique, comprise and claim at least two stiff ends 1, two stiff ends 1 designed to comprise the film to be measured being formed at on-chip sacrifice layer and being formed on sacrifice layer to axle.Described stiff end 1 number is 2-4, but the present embodiment have employed 2 stiff ends 1, each stiff end 1 is connected with a fixed beam 2, it is that an angle is connected with semi-girder 9 one end that another free end of each fixed beam 2 connects neck 3 by a fixed beam, described angle range of degrees is 40 °-90 °, have employed 90 ° in the present embodiment.The design of different angle has impact for the miniaturization of whole product and equalising torque, and the present invention, by many experiments and theoretical analysis, obtains in the angular range of 40 °-90 °, can meet the harmony of whole product miniaturization and balance.
The other end of two semi-girders 9 connects neck 8 sandwiched by two pointer beams and connects a pointer beam 7, described pointer beam 7 near a semi-girder 9 away from another semi-girder 9, described pointer beam is connected neck 8 and connects part and have a bending angle α with pointer beam, the angular range of the semi-girder 9 of pointer beam and close together is made to be 10 °-90 °, described pointer beam end is needle-like, a rule is pointed in the end of described pointer beam, described rule comprises the film to be measured being formed at on-chip sacrifice layer and being formed on sacrifice layer, which is provided with comb structure, for the oscillating quantity coordinating pointer beam to read described pointer beam.
In order to reduce the impact of semi-girder 9 counter stress effect, each semi-girder 9 central region connects neck 4 by a semi-girder and connects fixing base 10, two fixing base 10 and to be centrosymmetric distribution, and its symcenter is overlapping with integrally-built symcenter.Fixing base 10 comprises the film to be measured being formed at on-chip sacrifice layer and being formed on sacrifice layer.
Substrate, sacrifice layer, film to be measured and fixing base all can be one of the prior art, and such as, substrate material can be Si, GaAs, GaN or SiC, and sacrifice layer is Kapton, and film to be measured can be SiNx, SiO
2or the film such as SiC.Be vacuum or gas gap between described semi-girder 9 and substrate, Jiao Jiadi, gap width is 1.0-1.3um.
The invention also discloses a kind of film stress test method, be applicable to said apparatus, comprise the following steps:
Remove the sacrifice layer below film, symmetrically arranged fixed beam produces telescopic displacement and connects respectively by respective fixed beam the semi-girder that neck passes to correspondence,
Displacement is carried out rotation and is amplified by each semi-girder, and passes to pointer beam by rotating the mode that is centrosymmetric of the displacement after amplifying through pointer beam connection neck, and pointer beam divides the pointer beam connection neck effect planted to be converted to swing displacement to swing offset in rotational symmetry,
Described pointer beam has certain scale value by swinging displacement relative scale chi, reads scale value and the unrelieved stress gone out by linear elastic theory equations in film.
Shown in Fig. 6, in order to detailed description this method how to adopt linear elastic theory formula to obtain the unrelieved stress in film, first, due to the telescopic shape change of fixed beam 2, make its deformation connect neck 3 by fixed beam and pass to semi-girder 9, the length that fixed beam connects neck 3 is a1, width is b1, because semi-girder 9 produces rotation under effect of stress, and semi-girder 9 on due to adopt semi-girder connect neck 4 be connected with fixing base 10, therefore, the telescopic displacement of fixed beam 2 can be changed and be enlarged into the swing offset of semi-girder 9, it amplifies formula:
, (1), in formula,
for the telescopic displacement of fixed beam 2,
for the swing offset that pointer beam connection neck 8 place produces.This swing offset connects neck 8 by pointer beam and is delivered to pointer beam 7, and under this swing offset effect, drives pointer beam 7 to carry out swinging displacement, and its swing displacement equations formula is:
, (2), in formula,
for the amount of deflection at pointer beam tip, obtain according to above-mentioned, the multiple proportion formula that the telescopic displacement of fixed beam 2 amplifies through swinging displacement secondary through swing offset is again:
, (3)
By above-mentioned formula, after obtaining pointer beam displacement readings on the scale, stress to be measured can be calculated by above-mentioned formula.The present invention is without the need to knowing the Poisson ratio of detected materials.
Device of the present invention connects neck, rotating beam connection neck, the connection of pointer beam neck, stiff end by fixed beam, rotating beam, pointer beam, rule, fixed beam.Membrane stress is measured structure on film, is adopted lithographic technique to prepare, one end of fixed beam is connected to stiff end, after sacrifice layer below film is removed, due to the unrelieved stress effect of film inside, the telescopic displacement that fixed beam produces connects neck by fixed beam and passes to rotating beam, displacement is carried out one-level amplification by rotating beam, then displacement after amplification connects neck through pointer beam and passes to pointer beam, connect the effect of neck at the pointer beam be arranged symmetrically with under, displacement secondary is amplified, displacive transformation after secondary amplifies is the swing displacement of pointer beam, the value of pointer beam tip oscillation is read by the scale on rule, the unrelieved stress in film can be solved according to linear elastic theory.Secondary micro-displacement amplification structure designed by the present invention has that structure is simple, displacement equations multiple is high, stress measurement precision advantages of higher, is applicable to very much the unrelieved stress of measurement function film inside.
Approach application of the present invention is in said apparatus, by semi-girder, pivot arm and pointer beam, the smile displacement secondary of fixed beam is zoomed into the swing displacement of pointer beam, and directly obtained by rule, and go out the unrelieved stress in film by linear elastic theory equations.
Although specifically show in conjunction with preferred embodiment and describe the present invention; but those skilled in the art should be understood that; not departing from the spirit and scope of the present invention that appended claims limits; can make a variety of changes the present invention in the form and details, be protection scope of the present invention.
Claims (6)
1. a membrane stress proving installation, it is characterized in that: comprise at least two stiff ends axle being claimed to design, each stiff end is connected with a fixed beam, it is that an angle is connected with a semi-girder one end that another free end of each fixed beam connects neck by a fixed beam, the other end of two semi-girders connects neck sandwiched one pointer beam by two semi-girders, described pointer beam near a semi-girder away from another semi-girder, described pointer beam is connected neck and connects part and have a bending angle α with semi-girder, the angular range of the semi-girder of pointer beam and close together is made to be 10 °-90 °, described pointer beam points to a rule, described rule comprises the film to be measured being formed at on-chip sacrifice layer and being formed on sacrifice layer, which is provided with comb structure, for the oscillating quantity coordinating pointer beam to read described pointer beam.
2. a kind of membrane stress proving installation according to claim 1, is characterized in that: described angle range of degrees is 40 °-90 °.
3. a kind of membrane stress proving installation according to claim 1, it is characterized in that: each semi-girder central region connects neck by a semi-girder and connects a fixing base, two fixing bases are centrosymmetric distribution, and its symcenter is overlapping with one-piece construction symcenter.
4. a kind of membrane stress proving installation according to claim 1, is characterized in that: described stiff end number is 2-4.
5. a kind of membrane stress proving installation according to claim 1, is characterized in that: described pointer beam end is needle-like.
6. a film stress test method, is applicable to the arbitrary device of the claims 1 to claim 5, it is characterized in that, comprise the following steps:
Remove the sacrifice layer below film, symmetrically arranged fixed beam produces telescopic displacement and connects respectively by respective fixed beam the semi-girder that neck passes to correspondence,
Displacement is carried out rotation and is amplified by each semi-girder, and passes to pointer beam by rotating the mode that is centrosymmetric of the displacement after amplifying through pointer beam connection neck, and pointer beam divides the pointer beam connection neck effect planted to be converted to swing displacement to swing offset in rotational symmetry,
Described pointer beam has certain scale value by swinging displacement relative scale chi, reads scale value and the unrelieved stress gone out by linear elastic theory equations in film.
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| CN201510043465.XA CN104568236A (en) | 2015-01-28 | 2015-01-28 | Membrane stress testing device and method |
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| CN201510043465.XA CN104568236A (en) | 2015-01-28 | 2015-01-28 | Membrane stress testing device and method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105547558A (en) * | 2016-01-15 | 2016-05-04 | 东南大学 | Anisotropic testing structure and measurement method for MEMS micro-beam stress gradient based on horizontal T-shaped beams |
| CN105606283A (en) * | 2016-01-15 | 2016-05-25 | 东南大学 | Multi-beam-comparison-structure-based MEMS micro beam stress gradient testing structure and measurement method thereof |
| CN105628277A (en) * | 2016-01-15 | 2016-06-01 | 东南大学 | MEMS micro beam stress gradient test structure based on angle change and measurement method |
| CN110849507A (en) * | 2019-11-20 | 2020-02-28 | 清华大学 | Film stress detection structure in MEMS and preparation method thereof |
-
2015
- 2015-01-28 CN CN201510043465.XA patent/CN104568236A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105547558A (en) * | 2016-01-15 | 2016-05-04 | 东南大学 | Anisotropic testing structure and measurement method for MEMS micro-beam stress gradient based on horizontal T-shaped beams |
| CN105606283A (en) * | 2016-01-15 | 2016-05-25 | 东南大学 | Multi-beam-comparison-structure-based MEMS micro beam stress gradient testing structure and measurement method thereof |
| CN105628277A (en) * | 2016-01-15 | 2016-06-01 | 东南大学 | MEMS micro beam stress gradient test structure based on angle change and measurement method |
| CN105547558B (en) * | 2016-01-15 | 2018-04-24 | 东南大学 | The anisotropy test structure and measuring method of a kind of micro- stress beam gradients of MEMS based on accumbency tee girder |
| CN105606283B (en) * | 2016-01-15 | 2018-05-15 | 东南大学 | A kind of test structure and measuring method of the micro- stress beam gradients of MEMS that structure is compared based on more beams |
| CN110849507A (en) * | 2019-11-20 | 2020-02-28 | 清华大学 | Film stress detection structure in MEMS and preparation method thereof |
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Application publication date: 20150429 |