CN109103294A - The production method of burn-through type localized contact back passivation solar battery - Google Patents
The production method of burn-through type localized contact back passivation solar battery Download PDFInfo
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- CN109103294A CN109103294A CN201710469536.1A CN201710469536A CN109103294A CN 109103294 A CN109103294 A CN 109103294A CN 201710469536 A CN201710469536 A CN 201710469536A CN 109103294 A CN109103294 A CN 109103294A
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- back side
- burn
- sin
- drying
- solar battery
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- 238000002161 passivation Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 238000007639 printing Methods 0.000 claims abstract description 19
- 239000004411 aluminium Substances 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 13
- 239000002002 slurry Substances 0.000 claims abstract description 13
- 229910017107 AlOx Inorganic materials 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000007650 screen-printing Methods 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 239000011574 phosphorus Substances 0.000 claims abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000004513 sizing Methods 0.000 abstract description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 3
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to the production methods that burn-through type localized contact carries on the back passivation solar battery, comprising the following steps: (1) process for etching；(2), phosphorus diffusion；(3), etching edge and polished backside；(4), front SiN is deposited；(5), the printing of back side AlOx slurry and drying locally print upper AlOx slurry in silicon chip back side with the mode of silk-screen printing, then form it into Al by drying sintering and annealing steps2O3Passivating film；(6), back side SiN is deposited；(7), aluminium paste is printed and is dried；(8), rear electrode printing and drying；(9), front electrode printing and drying；(10), high temperature sintering；The present invention forms Al by the way of silk-screen printing AlOx slurry2O3Passivating film, equipment are simply low in cost；Screen printing sizing agent back side figure can more need flexible design, slot without local laser, reduce the investment of laser slotting equipment, the laser slotting avoided damage caused by substrate.
Description
Technical field
The present invention relates to manufacture of solar cells manufactures, specifically disclose a kind of burn-through type localized contact back passivation solar-electricity
The production method in pond.
Background technique
Currently, being required the photoelectric conversion efficiency of photovoltaic products higher and higher to reduce cost of electricity-generating.PERC
(Passivated Emitter Rear Cell) battery with its higher photoelectric conversion efficiency, simple production process and with it is existing
Producing line is compatible to have the more and more enterprises of advantage back to be received to high.
Current routine PERC battery process process is as follows:
Step 1, process for etching；
Step 2, phosphorus diffusion；
Step 3, etching edge and polished backside；
Step 4, positive SiN deposition；
Step 5, back side Al2O3Deposition+back side SiN deposition；
Step 6, laser slotting；
Step 7, rear electrode printing and drying；
Step 8, aluminium paste printing and sintering annealing；
Step 9, front electrode printing and drying；
Step 10, high temperature sintering.
Traditional PERC structure battery back side Al2O3Depositing general common method has atomic layer deposition method (ALD), chemistry
Vapour deposition process (PECVD), aumospheric pressure cvd method (APC VA) and sputtering method (Sputtering).Three kinds of front mode
TMA (trimethyl aluminium) has all been used as forerunner's agent, has deposited a layer thickness in silicon chip surface using plasma mode
The Al of 5-30nm2O3Film.Sputtering method is not need uniquely to be former with active oxygen in an argon atmosphere with the technology of TMA, which
Son bombardment aluminium target as sputter forms Al2O film.It is exactly that equipment investment is larger that the above several ways, which have a lower problem,
Three kinds of front additionally uses TMA, and consumables cost is higher.There are also an exactly TMA (trimethyl aluminium) to belong to toxic and easy natural liquid
Body (room temperature) has certain risk.Problems above constrains the rapid proliferation and popularization of this kind of PERC technology path.
Summary of the invention
It is an object of the invention to: a kind of equipment investment is lower to solve the above problem, auxiliary material development difficulty
The production method of lesser burn-through type localized contact back passivation solar battery.
The technical scheme adopted by the invention is that such:
The production method of burn-through type localized contact back passivation solar battery, comprising the following steps:
(1) process for etching: silicon chip surface making herbs into wool；
(2) phosphorus diffusion: pn-junction is formed on cell piece surface；
(3) etching edge and polished backside: the part pn-junction at removal silicon chip edge and the back side, while by planarized back；
(4) front SiN is deposited；
(5) AlOx slurry in the back side prints: locally printing upper AlOx slurry in silicon chip back side with the mode of silk-screen printing, then
Al is formed it by drying sintering and annealing steps2O3Passivating film；
(6) back side SiN is deposited；
(7) aluminium paste printing and drying: in one layer of aluminium paste of SiN printed thereon of silicon chip back side；
(8) rear electrode printing and drying；
(9) front electrode printing and drying；
(10) high temperature sintering: above-mentioned silver paste, aluminium paste are sintered together in sintering furnace, ultimately form cell piece.
Above-mentioned steps and the main difference of the prior art form Al using silk-screen printing in step (5)2O3Passivating film replaces
Traditional mode, equipment is cheap, highly-safe；It can be related to the structure graph of silk screen as needed simultaneously, save laser slotting.
Further, silicon chip back side pn-junction removal depth is 5-10um in step (3).
Further, front SiN deposition thickness is 78-88nm in step (4).
Further, Al is formed in step (5)2O3Passivating film is locally vacated.
Further, back side SiN deposition thickness is 70nm-120nm in step (6).
In conclusion due to the adoption of the above technical scheme, the beneficial effects of the present invention are:
(1) Al is formed by the way of silk-screen printing AlOx slurry2O3Passivating film, equipment are simply low in cost；AlOx slurry
It is highly-safe in TMA chemicals, can be stored under room temperature；
(2) screen printing sizing agent back side figure can more need flexible design, slot, reduce sharp without local laser
The investment of light fluting apparatus, the laser slotting avoided damage caused by substrate；
(3) for the present invention using the aluminium paste for burning SiN layer, good Ohmic contact can be formed by no longer needing to fluting on SiN.It should
Aluminium paste can corrode SiN layer, but cannot corrode Al2O3Layer, to ensure good passivating back.
Detailed description of the invention
Fig. 1 is the Al that silicon chip back side is formed2O3Passivation film structure figure.
Specific embodiment
The production method of burn-through type localized contact back passivation solar battery, comprising the following steps:
(1) process for etching: silicon chip surface making herbs into wool, silicon wafer pass through dry or wet process for etching, reduce the anti-of silicon chip surface
Rate is penetrated, reflectivity 10-22% is controlled；
(2) phosphorus diffusion: doped layer is formed on cell piece surface, forms pn-junction, diffused sheet resistance 80-120ohm/；
(3) etching edge and polished backside: the part pn-junction at removal silicon chip edge and the back side, while by planarized back,
The reflectivity to long wave light is improved, removes back side depth 5-10um as this step 1；
(4) front SiN is deposited；Surface deposits layer of sin, and further antireflective, thickness 78- are simultaneously played the role of in passivation front
Between 88nm；
(5) AlOx slurry in the back side prints: locally printing upper AlOx slurry in silicon chip back side with the mode of silk-screen printing, then
Al is formed it by drying sintering and annealing steps2O3Passivating film；Silk-screen printing figure can flexible design, needing the back side to connect
AlOx slurry is not printed in the place of touching, that is, the Al formed2O3Passivating film is locally vacated (referring to Fig. 1), to facilitate aluminium paste below and silicon
Piece forms good Metals-semiconductor contacts；Laser slotting equipment and step can be saved using the technical solution；
(6) back side SiN is deposited；In silicon chip back side Al2O3Layer of sin film is deposited on passivating film to increase to long wave
Reflection；Back side SiN thickness is mainly to increase internal reflection, between general range 70nm-120nm；
(7) aluminium paste printing and drying: in one layer of aluminium paste of SiN printed thereon of silicon chip back side；The aluminium paste is burnt in final high temperature
SiN film can be corroded when knot, but Al cannot be burnt2O3, do not destroy Al2O3Passivation effect, and form good Europe with substrate silicon
Nurse contact；
(8) rear electrode printing and drying；Back electrode silver paste is printed, which can form good attachment on the surface SiN
Power, and good Ohmic contact can be formed with aluminium paste, while there is good solderability.As long as being able to satisfy aforementioned properties, this
Place's silver paste need not burn SiN；
(9) front electrode printing and drying；Printing front electrode silver slurry is simultaneously dried, with traditional handicraft indistinction；
(10) above-mentioned silver paste, aluminium paste: being sintered by high temperature sintering together in sintering furnace, forms good Ohmic contact, most
End form is at cell piece.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (6)
1. the production method of burn-through type localized contact back passivation solar battery, it is characterised in that: the following steps are included:
(1) process for etching: silicon chip surface making herbs into wool；
(2) phosphorus diffusion: pn-junction is formed on cell piece surface；
(3) etching edge and polished backside: the part pn-junction at removal silicon chip edge and the back side, while by planarized back；
(4) front SiN is deposited；
(5) AlOx slurry in the back side prints: locally printing upper AlOx slurry in silicon chip back side with the mode of silk-screen printing, then passes through
Drying sintering and annealing steps form it into Al2O3Passivating film；
(6) back side SiN is deposited；
(7) aluminium paste printing and drying: in one layer of aluminium paste of SiN printed thereon of silicon chip back side；
(8) rear electrode printing and drying；
(9) front electrode printing and drying；
(10) high temperature sintering: above-mentioned silver paste, aluminium paste are sintered together in sintering furnace, ultimately form cell piece.
2. the production method of burn-through type localized contact back passivation solar battery according to claim 1, it is characterised in that:
Silicon chip back side pn-junction removal depth is 5-10um in step (3).
3. the production method of burn-through type localized contact back passivation solar battery according to claim 1, it is characterised in that:
Front SiN deposition thickness is 78-88nm in step (4).
4. the production method of burn-through type localized contact back passivation solar battery according to claim 1, it is characterised in that:
Al is formed in step (5)2O3Passivating film is locally vacated.
5. the production method of burn-through type localized contact back passivation solar battery according to claim 1, it is characterised in that:
Back side SiN deposition thickness is 70nm-120nm in step (6).
6. the production method of burn-through type localized contact back passivation solar battery according to claim 1, it is characterised in that:
The aluminium paste used in step (7) can corrode SiN layer, not corrode Al2O3Layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710469536.1A CN109103294A (en) | 2017-06-20 | 2017-06-20 | The production method of burn-through type localized contact back passivation solar battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710469536.1A CN109103294A (en) | 2017-06-20 | 2017-06-20 | The production method of burn-through type localized contact back passivation solar battery |
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| Publication Number | Publication Date |
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| CN109103294A true CN109103294A (en) | 2018-12-28 |
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| CN201710469536.1A Pending CN109103294A (en) | 2017-06-20 | 2017-06-20 | The production method of burn-through type localized contact back passivation solar battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289339A (en) * | 2019-07-18 | 2019-09-27 | 江苏辉伦太阳能科技有限公司 | A kind of solar battery and preparation method thereof |
| CN110767772A (en) * | 2019-09-25 | 2020-02-07 | 东方日升（常州）新能源有限公司 | Preparation method of local contact passivation solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050551A (en) * | 2012-03-30 | 2013-04-17 | 长兴化学工业股份有限公司 | Passivation layer of solar cell and manufacturing method thereof |
| CN103996743A (en) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Method for manufacturing back passivation point contact solar cell of aluminum slurry burning-through local thin film |
| CN104201252A (en) * | 2014-09-22 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | PERC (passivated emitter and locally diffused rear contact) solar cell preparation method |
-
2017
- 2017-06-20 CN CN201710469536.1A patent/CN109103294A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050551A (en) * | 2012-03-30 | 2013-04-17 | 长兴化学工业股份有限公司 | Passivation layer of solar cell and manufacturing method thereof |
| CN103996743A (en) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Method for manufacturing back passivation point contact solar cell of aluminum slurry burning-through local thin film |
| CN104201252A (en) * | 2014-09-22 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | PERC (passivated emitter and locally diffused rear contact) solar cell preparation method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289339A (en) * | 2019-07-18 | 2019-09-27 | 江苏辉伦太阳能科技有限公司 | A kind of solar battery and preparation method thereof |
| CN110289339B (en) * | 2019-07-18 | 2021-05-18 | 江苏辉伦太阳能科技有限公司 | Preparation method of solar cell |
| CN110767772A (en) * | 2019-09-25 | 2020-02-07 | 东方日升（常州）新能源有限公司 | Preparation method of local contact passivation solar cell |
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