CN109103149A - 一种改进型的双基岛封装结构 - Google Patents

一种改进型的双基岛封装结构 Download PDF

Info

Publication number
CN109103149A
CN109103149A CN201710468331.1A CN201710468331A CN109103149A CN 109103149 A CN109103149 A CN 109103149A CN 201710468331 A CN201710468331 A CN 201710468331A CN 109103149 A CN109103149 A CN 109103149A
Authority
CN
China
Prior art keywords
island
encapsulating structure
follow
biradical
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710468331.1A
Other languages
English (en)
Inventor
陆宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Zhuo Micro System Technology Co Ltd
Original Assignee
Shanghai Zhuo Micro System Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Zhuo Micro System Technology Co Ltd filed Critical Shanghai Zhuo Micro System Technology Co Ltd
Priority to CN201710468331.1A priority Critical patent/CN109103149A/zh
Publication of CN109103149A publication Critical patent/CN109103149A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • H01L23/5286Arrangements of power or ground buses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明提供了一种改进型的双基岛封装结构,包括塑封体、外引脚、一个通过散热材质外露的基岛,一个不外露的基岛,两个芯片。本发明解决了传统双基岛封装结构存在的散热问题,同时解决了单基岛封装结构性能不佳和集成度低的问题。本发明使制造成本得到降低,且能满足电子行业小型材经,微型化的发展需求。

Description

一种改进型的双基岛封装结构
技术领域
本发明涉及集成电路领域,尤其涉及集成电路芯片封装技术领域。
背景技术
现有的集成电路芯片封装技术多采用在一个塑封体上封装一颗芯片,一个塑封体里有一个基岛,芯片放在基岛上。当两个芯片需要组合使用时,现有的技术多将两个芯片封装在两个塑封体里,通过外围连线连接,这样可以大大保证芯片的可靠性,但存在性能不佳的问题,由于采用两个塑封体,成本也很高。
目前,出现了一种双基岛的封装结构,在一个塑封体里同时存在两个基岛,将两个芯片分别放置两个基岛里,由于将两个相关联的芯片安装在一个塑封体内部的两个基岛里,其性能稳定性得到大大增强,成本也大大降低。但是将两个芯片放在一个塑封体里,芯片自身工作散发的热能不能很好的排出,这会大大影响芯片的性能,甚至导致芯片损坏。
发明内容
本发明提供了一种改进型的双基岛封装结构,将两个基岛中的一个设计成通过散热材质使基岛外露,外露基岛上可以放置功耗比较大的芯片;另一个基岛仍然全部包裹在塑封体里。
本发明解决了传统双基岛封装结构的散热问题,同时解决了单基岛性能不佳和集成度低的问题,本发明使制造成本得到降低,且能满足电子行业小型材经,微型化的发展需求。
附图说明
图1为本发明改进型的双基岛封装结构。
具体实施方式
图1是本发明改进型的双基岛封装结构,它包括塑封体1、外引脚4、芯片3、芯片6、基岛2、基岛5,芯片6放置在基岛5上,芯片3放置在基岛2上,封装时将芯片上的PAD通过连线连接到外引脚上。
本发明的独特之处在于将基岛2和基岛5中的一个基岛外露,将它通过散热材质从封装体的体部引出,基岛外露,其封装的热容积比较大,具有良好的散热特性。与外露基岛相接触的散热材质,可以在装配过程中通过回流焊安装到PCB上。这样可使电路板铺铜的接地区域充当散热片。
基岛2和基岛5中的另一个基岛不外露,全部包裹在塑封体里,此基岛不外露可以很好的满足封装所要求的安全爬电距离和电气间隙,使芯片可靠性大大提高。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。

Claims (3)

1.一种改进型的双基岛封装结构,其特征在于,包含:塑封体、外引脚、两个芯片、两个基岛。
2.一种改进型的双基岛封装结构,其特征在于,所述两个芯片分别放置在两个不同的基岛里。
3.一种改进型的双基岛封装结构,其特征在于,所述的两个基岛一个全部包裹在塑封体里,一个通过散热材质外露在塑封体外。
CN201710468331.1A 2017-06-20 2017-06-20 一种改进型的双基岛封装结构 Pending CN109103149A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710468331.1A CN109103149A (zh) 2017-06-20 2017-06-20 一种改进型的双基岛封装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710468331.1A CN109103149A (zh) 2017-06-20 2017-06-20 一种改进型的双基岛封装结构

Publications (1)

Publication Number Publication Date
CN109103149A true CN109103149A (zh) 2018-12-28

Family

ID=64795391

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710468331.1A Pending CN109103149A (zh) 2017-06-20 2017-06-20 一种改进型的双基岛封装结构

Country Status (1)

Country Link
CN (1) CN109103149A (zh)

Similar Documents

Publication Publication Date Title
US20190115330A1 (en) Method for fabricating electronic package
CN103456701A (zh) 带有散热器的集成电路管芯组件
CN103426839B (zh) 半导体封装
CN105514080A (zh) 具有再分布层和加强件的电子器件及相关方法
TWI593067B (zh) 半導體封裝結構
CN204375722U (zh) 一种半导体封装结构
US9859196B2 (en) Electronic device with periphery contact pads surrounding central contact pads
CN104582430A (zh) 具有附连到散热器的焊料球体的电气组件
CN106098641A (zh) 一种高效散热的集成电路封装结构
CN107731764A (zh) 一种半导体封装结构
CN115377024A (zh) 半导体封装结构
CN109103149A (zh) 一种改进型的双基岛封装结构
CN205303448U (zh) 一种芯片封装结构
CN105280603B (zh) 电子封装组件
CN104681509A (zh) 一种改进型的双基岛封装结构
CN107749408A (zh) 一种弹性导热件露出封装结构
TWI619212B (zh) 用於半導體裝置之接合線式散熱結構
CN201229938Y (zh) 芯片封装结构
CN105070703A (zh) 一种高散热性能的整流桥封装结构
TWI700791B (zh) 用於半導體裝置之溝槽式散熱結構
CN106098647B (zh) 一种多芯片叠堆式集成电路封装
CN204243030U (zh) 一种电子器件
CN103441080A (zh) 一种芯片正装bga封装方法
US9190355B2 (en) Multi-use substrate for integrated circuit
CN102104031A (zh) 单岛外露的双岛结构引线框

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20181228