CN109103142A - A kind of ultra thin substrate LED preparation method - Google Patents
A kind of ultra thin substrate LED preparation method Download PDFInfo
- Publication number
- CN109103142A CN109103142A CN201810826170.3A CN201810826170A CN109103142A CN 109103142 A CN109103142 A CN 109103142A CN 201810826170 A CN201810826170 A CN 201810826170A CN 109103142 A CN109103142 A CN 109103142A
- Authority
- CN
- China
- Prior art keywords
- die bond
- substrate
- chip
- copper foil
- lamp bead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of ultra thin substrate LED preparation method, the method is related to mounting LED flip chip on flexible thin copper base.LED flip chip passes through tin cream first and is bonded on flexible thin copper base, in chip light emitting face whole face molding glue after reflow soldering process, turns white light then molding fluorescent powder glue if it is blue chip.Further copper foil is etched, by copper-clad surface P, N is extremely separated.Then entire substrate is split by accurate cutting by certain size, forms CSP lamp bead of the batch containing single LED core particles.This mode, which encapsulates CSP lamp bead, the features such as convenient and simple encapsulation, good heat dissipation, whole plate encapsulate, are high-efficient and at low cost.Device particle is small simultaneously, and lamp bead bottom surface welding PAD is bigger than conventional CSP, mounts convenient for lamp bead, is suitable for the fields such as illumination, decoration, backlight, display.
Description
Technical field
The present invention relates to the preparation method of LED a kind of more particularly to a kind of ultra thin substrate LED preparation method, especially one
Kind flip-chip ultra thin substrate LED.
Background technique
LED flip chip is relatively just short equipped with heat dissipation channel at present, can carry more high current, light-emitting area is bigger, light
The features such as high is imitated, is the inexorable trend of the following LED application development.LED flip chip encapsulates at present, mainly with COB, CSP etc. envelope
Dress form, flip-chip is due to there is the above advantage, and flip-chip occupation rate of market is increasing year by year, but current encapsulation side
Formula, light efficiency is relatively low after encapsulation, and cost is at high cost with respect to formal dress chip package, so needing for production efficiency, cost, application
Range advanced optimizes promotion.So how a kind of novel flip-chip ultra thin substrate LED manufacturing method of demand,
Cost can be reduced and improved efficiency and properties of product, be urgent problem to be solved in row, effective solution of the problem can not only solve
The deficiency of certainly current Flip-Chip Using also can will bring biggish business opportunity for enterprise.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of ultra thin substrate LED preparation method, the method
The features such as encapsulation CSP lamp bead, which has, encapsulates convenient and simple, good heat dissipation, and whole plate encapsulation is high-efficient, at low cost.And particle is small, lamp bead bottom
Face welding PAD is bigger than conventional CSP, mounts convenient for lamp bead.Suitable for illumination, decoration, backlight, the fields such as display.
The technical solution adopted by the present invention to solve the technical problems is: a kind of ultra thin substrate LED preparation method, including with
Lower step:
1. the copper foil of 20 μm of -40 μ m thick is cut into the copper foil of predefined size;The plastics for getting out corresponding size are thin
As strengthening membrane, the strengthening membrane is used to be made film with 260 degree of heatproof or more of plastic film, and material can be used such as PI,
The plastics such as LCP, PEEK, PTFE;Its thickness can be 1mm-3mm;
2. copper foil is attached on strengthening membrane, and Cutting Road label is put in copper foil front or/and the back side, becomes substrate;
3. boring location hole in substrate edges;The location hole is used for subsequent die bond, mould top, and the techniques such as etching fix substrate;
4. determining that chip die bond position size, common chip size are 8mil × 20mil, 35mil according to chip size
× 35mil etc.;In non-chip die bond position printing white printing;White oil plays the role of reflective and determines chip die bond position;
5. needing die bond position at not white oily position, surface turmeric is carried out to copper base;
6. setting progress print solder paste in not white oil level and carrying out solid flip-chip;Solidified after Reflow Soldering;It is formed
Substrate die bond lamella;
7. substrate die bond lamella whole face molding fluorescent powder glue is become pre- die bond substrate layer;The technique stream of the molding
Journey are as follows: mold preparation → glue preparation → upper substrate → molding → injecting glue → heating → from mould;In this way, whole plate encapsulates, it is high-efficient
While, a molding may be implemented and complete multiple chip moldings;
8. by the reinforcement film stripping of pre- die bond substrate layer bottom;Become the first die bond substrate layer;
9. the bottom copper foil of pair the first die bond substrate layer is etched, the route of needs is etched;Become final die bond
Substrate layer;So different circuit-lines can be then cooked up to above-mentioned master the first die bond substrate layer as general part, with
Simple general part mode forms multiplicity, changeable actual circuit, the simple production of a variety of circuit form products of production.
10. marking according to chip position and carrying out cutting whole into sections final die bond substrate layer along aforesaid substrate Cutting Road;Such as
This can carry out division cutting according to pre-designed circuit, can also simply repair again in finally cutting advance row line
Change and cut again, so facilitates the adjustment of production.
11. the lamp bead or COB illuminating module that are needed.
In conclusion the present invention solid led flip-chip, chip on flexible thin copper base use tin cream die bond;Lead to again
Cross Reflow Soldering solidification.Again by whole face molding glue, turn white light then molding fluorescent powder glue if it is blue chip;Then to copper
Foil is etched, and copper-clad surface P, N is extremely separated;Again by accurate cutting, core particles on substrate are cut according to certain size, shape
At single CSP lamp bead.This mode, which encapsulates CSP lamp bead, convenient and simple, the good heat dissipation of encapsulation, and whole plate encapsulation is high-efficient, at low cost etc.
Feature.And particle is small, lamp bead bottom surface welding PAD is bigger than conventional CSP, mounts convenient for lamp bead.Suitable for illumination, decoration, backlight is shown
Show equal fields.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of 1 substrate and strengthening membrane of the embodiment of the present invention;
Fig. 2 is the structural schematic diagram of 1 first die bond substrate layer of the embodiment of the present invention;
Fig. 3 is the lamp bead schematic diagram obtained after the embodiment of the present invention 1 is finally cut.
Specific embodiment
Embodiment 1
A kind of ultra thin substrate LED preparation method described in the embodiment of the present invention 1, as shown in Figure 1-3, include following step
It is rapid:
1. the copper foil 1 of 30 μ m thicks is cut into the copper foil of 50mm × 50mm size;Get out 50mm × 50mm size
PTFE plastic film as strengthening membrane 2, film thickness 2mm;
2. copper foil is attached on strengthening membrane, and Cutting Road label 3 is put in copper foil obverse and reverse marginal position and is become
Substrate;
3. boring location hole 4 in four corner edge of substrate;Location hole is used for subsequent die bond, mould top, and the techniques such as etching consolidate substrate
It is fixed;
4. corresponding size is that 8mil × 20mil chip reserves multiple chip die bonds position on copper foil, size is to correspond to
In 8mil × 20mil;And in non-chip die bond position printing white printing;White oil plays work that is reflective and determining chip die bond position
With;
5. needing die bond position at not white oily position, surface turmeric is carried out to copper base;
6. setting progress print solder paste in not white oil level and carrying out solid flip-chip 5;Solidified after Reflow Soldering;It is formed
Substrate die bond lamella;
7. substrate die bond lamella whole face molding fluorescent powder glue 6 is become pre- die bond substrate layer;The process flow of molding are as follows:
Mold preparation → glue preparation → upper substrate → molding → injecting glue → heating → from mould;
8. the reinforcement film stripping of pre- die bond substrate layer bottom is become the first die bond substrate layer;
9. the bottom copper foil of pair the first die bond substrate layer is etched, the route of needs is etched;Become final die bond
Substrate layer;
10. by final die bond substrate layer according to the requirement of chip position and particular electrical circuit, with above-mentioned substrate cut road label
Cutting whole into sections is carried out as reference position;
11. the COB illuminating module needed.
The above described is only a preferred embodiment of the present invention, not making in any form to structure of the invention
Limitation.Any simple modification, equivalent change and modification to the above embodiments according to the technical essence of the invention,
In the range of still falling within technical solution of the present invention.
Claims (4)
1. a kind of ultra thin substrate LED preparation method, which comprises the following steps:
(1) by the copper foil of 20-40 μ m thick, the copper foil of predefined size is cut into;The plastic film for getting out corresponding size is made
For strengthening membrane;
(2) copper foil is attached on strengthening membrane, and puts on Cutting Road label in copper foil front or/and the back side, become substrate;
(3) location hole is bored in substrate edges;The location hole is used for subsequent die bond, mould top, and the techniques such as etching fix substrate;
(4) chip die bond position size is determined according to chip size, in non-chip die bond position printing white printing;White oil plays reflective
With the effect for determining chip die bond position;
(5) at not white oily position, that is, die bond position is needed, surface turmeric is carried out to copper base;
(6) progress print solder paste is set in not white oil level and carry out solid flip-chip;Solidified after Reflow Soldering;Form substrate
Die bond lamella;
(7) substrate die bond lamella whole face molding fluorescent powder glue is become into pre- die bond substrate layer;
(8) by the reinforcement film stripping of pre- die bond substrate layer bottom;Become the first die bond substrate layer;
(9) the bottom copper foil of the first die bond substrate layer is etched, etches the route of needs;Become final die bond substrate
Layer;
(10) final die bond substrate layer is marked along aforesaid substrate Cutting Road according to chip position and carries out cutting whole into sections;
(11) lamp bead or COB illuminating module needed.
2. a kind of ultra thin substrate LED preparation method according to claim 1, which is characterized in that the strengthening membrane uses
It being made with 260 degree of heatproof or more of plastic film, material can be used such as PI, LCP, PEEK, the plastics such as PTFE, with a thickness of
1mm-3mm。
3. a kind of ultra thin substrate LED preparation method according to claim 1 or 2, which is characterized in that the chip size is logical
Often it is 8mil × 20mil, 35mil × 35mil etc., determining chip die bond position size is corresponded to this.
4. a kind of ultra thin substrate LED preparation method according to claim 1 or 2, which is characterized in that the technique of the molding
Process are as follows: mold preparation → glue preparation → upper substrate → molding → injecting glue → heating → from mould.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810826170.3A CN109103142A (en) | 2018-07-25 | 2018-07-25 | A kind of ultra thin substrate LED preparation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810826170.3A CN109103142A (en) | 2018-07-25 | 2018-07-25 | A kind of ultra thin substrate LED preparation method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109103142A true CN109103142A (en) | 2018-12-28 |
Family
ID=64847445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810826170.3A Withdrawn CN109103142A (en) | 2018-07-25 | 2018-07-25 | A kind of ultra thin substrate LED preparation method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109103142A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111916358A (en) * | 2020-08-20 | 2020-11-10 | 鑫金微半导体(深圳)有限公司 | Novel packaging method of ultra-thin power device |
CN112969311A (en) * | 2021-01-29 | 2021-06-15 | 广东浩轩光电有限公司 | Processing technology of CSPLED mounted planting type substrate |
-
2018
- 2018-07-25 CN CN201810826170.3A patent/CN109103142A/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111916358A (en) * | 2020-08-20 | 2020-11-10 | 鑫金微半导体(深圳)有限公司 | Novel packaging method of ultra-thin power device |
CN112969311A (en) * | 2021-01-29 | 2021-06-15 | 广东浩轩光电有限公司 | Processing technology of CSPLED mounted planting type substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4754850B2 (en) | Manufacturing method of LED mounting module and manufacturing method of LED module | |
CN107112384A (en) | Include light emitting diode (LED) part of the directly LED die of attachment lead frame | |
CN109980070B (en) | Wafer-level chip-level CSP (chip scale package) structure and preparation method thereof | |
CN103972364A (en) | Method for manufacturing LED light source | |
CN104752597B (en) | Light-emitting diode encapsulation structure and its packaging method | |
KR100977260B1 (en) | High Power LED Package and Manufacturing Method Thereof | |
CN101963295A (en) | LED (Light Emitting Diode) integrated structure, manufacturing method, lamp, display screen, backlight device, projecting device and injection mould of forming plastic part | |
CN109103142A (en) | A kind of ultra thin substrate LED preparation method | |
CN106410022A (en) | Manufacturing method of LED packaging device and the LED packaging device | |
TWI536617B (en) | Light emitting diode lightbar and method for manufacturing the same | |
CN106384738A (en) | Micro-LED display device based on imprinting process | |
KR101769356B1 (en) | Method and device for forming phosphor layer in light emitting device | |
US20130161673A1 (en) | Light emitting diode package having fluorescent film directly coated on light emitting diode die and method for manufacturing the same | |
CN102931328A (en) | Manufacturing method of LED (Light-Emitting Diode) packaging body | |
KR101853327B1 (en) | Method for manufacturing light emitting device package | |
CN204375748U (en) | A kind of COB encapsulation module of many glasss of polychromes | |
CN104051603B (en) | A kind of manufacturing process of the LED light bar of double-side | |
CN207868197U (en) | A kind of LED lamp bead of wiring board | |
CN103904071A (en) | Manufacturing technology of transparent substrate LED lamp strip | |
CN106410011B (en) | A kind of 3D printing packaging method of flip-chip | |
CN110010753A (en) | Semiconductor light-emitting apparatus and its manufacturing method | |
CN110021586A (en) | A kind of LED lamp bead of wiring board and preparation method thereof | |
CN107146838A (en) | The packaging technology and LED component of a kind of LED component | |
CN209447195U (en) | Bio-identification mould group | |
CN110021588A (en) | A kind of LED display mould group of band cup lamp bead and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WW01 | Invention patent application withdrawn after publication |
Application publication date: 20181228 |
|
WW01 | Invention patent application withdrawn after publication |