CN109103142A - A kind of ultra thin substrate LED preparation method - Google Patents

A kind of ultra thin substrate LED preparation method Download PDF

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Publication number
CN109103142A
CN109103142A CN201810826170.3A CN201810826170A CN109103142A CN 109103142 A CN109103142 A CN 109103142A CN 201810826170 A CN201810826170 A CN 201810826170A CN 109103142 A CN109103142 A CN 109103142A
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CN
China
Prior art keywords
die bond
substrate
chip
copper foil
lamp bead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201810826170.3A
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Chinese (zh)
Inventor
吴懿平
李林
区燕杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuhai One Core Semiconductor Technology Co Ltd
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Zhuhai One Core Semiconductor Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Zhuhai One Core Semiconductor Technology Co Ltd filed Critical Zhuhai One Core Semiconductor Technology Co Ltd
Priority to CN201810826170.3A priority Critical patent/CN109103142A/en
Publication of CN109103142A publication Critical patent/CN109103142A/en
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a kind of ultra thin substrate LED preparation method, the method is related to mounting LED flip chip on flexible thin copper base.LED flip chip passes through tin cream first and is bonded on flexible thin copper base, in chip light emitting face whole face molding glue after reflow soldering process, turns white light then molding fluorescent powder glue if it is blue chip.Further copper foil is etched, by copper-clad surface P, N is extremely separated.Then entire substrate is split by accurate cutting by certain size, forms CSP lamp bead of the batch containing single LED core particles.This mode, which encapsulates CSP lamp bead, the features such as convenient and simple encapsulation, good heat dissipation, whole plate encapsulate, are high-efficient and at low cost.Device particle is small simultaneously, and lamp bead bottom surface welding PAD is bigger than conventional CSP, mounts convenient for lamp bead, is suitable for the fields such as illumination, decoration, backlight, display.

Description

A kind of ultra thin substrate LED preparation method
Technical field
The present invention relates to the preparation method of LED a kind of more particularly to a kind of ultra thin substrate LED preparation method, especially one Kind flip-chip ultra thin substrate LED.
Background technique
LED flip chip is relatively just short equipped with heat dissipation channel at present, can carry more high current, light-emitting area is bigger, light The features such as high is imitated, is the inexorable trend of the following LED application development.LED flip chip encapsulates at present, mainly with COB, CSP etc. envelope Dress form, flip-chip is due to there is the above advantage, and flip-chip occupation rate of market is increasing year by year, but current encapsulation side Formula, light efficiency is relatively low after encapsulation, and cost is at high cost with respect to formal dress chip package, so needing for production efficiency, cost, application Range advanced optimizes promotion.So how a kind of novel flip-chip ultra thin substrate LED manufacturing method of demand, Cost can be reduced and improved efficiency and properties of product, be urgent problem to be solved in row, effective solution of the problem can not only solve The deficiency of certainly current Flip-Chip Using also can will bring biggish business opportunity for enterprise.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of ultra thin substrate LED preparation method, the method The features such as encapsulation CSP lamp bead, which has, encapsulates convenient and simple, good heat dissipation, and whole plate encapsulation is high-efficient, at low cost.And particle is small, lamp bead bottom Face welding PAD is bigger than conventional CSP, mounts convenient for lamp bead.Suitable for illumination, decoration, backlight, the fields such as display.
The technical solution adopted by the present invention to solve the technical problems is: a kind of ultra thin substrate LED preparation method, including with Lower step:
1. the copper foil of 20 μm of -40 μ m thick is cut into the copper foil of predefined size;The plastics for getting out corresponding size are thin As strengthening membrane, the strengthening membrane is used to be made film with 260 degree of heatproof or more of plastic film, and material can be used such as PI, The plastics such as LCP, PEEK, PTFE;Its thickness can be 1mm-3mm;
2. copper foil is attached on strengthening membrane, and Cutting Road label is put in copper foil front or/and the back side, becomes substrate;
3. boring location hole in substrate edges;The location hole is used for subsequent die bond, mould top, and the techniques such as etching fix substrate;
4. determining that chip die bond position size, common chip size are 8mil × 20mil, 35mil according to chip size × 35mil etc.;In non-chip die bond position printing white printing;White oil plays the role of reflective and determines chip die bond position;
5. needing die bond position at not white oily position, surface turmeric is carried out to copper base;
6. setting progress print solder paste in not white oil level and carrying out solid flip-chip;Solidified after Reflow Soldering;It is formed Substrate die bond lamella;
7. substrate die bond lamella whole face molding fluorescent powder glue is become pre- die bond substrate layer;The technique stream of the molding Journey are as follows: mold preparation → glue preparation → upper substrate → molding → injecting glue → heating → from mould;In this way, whole plate encapsulates, it is high-efficient While, a molding may be implemented and complete multiple chip moldings;
8. by the reinforcement film stripping of pre- die bond substrate layer bottom;Become the first die bond substrate layer;
9. the bottom copper foil of pair the first die bond substrate layer is etched, the route of needs is etched;Become final die bond Substrate layer;So different circuit-lines can be then cooked up to above-mentioned master the first die bond substrate layer as general part, with Simple general part mode forms multiplicity, changeable actual circuit, the simple production of a variety of circuit form products of production.
10. marking according to chip position and carrying out cutting whole into sections final die bond substrate layer along aforesaid substrate Cutting Road;Such as This can carry out division cutting according to pre-designed circuit, can also simply repair again in finally cutting advance row line Change and cut again, so facilitates the adjustment of production.
11. the lamp bead or COB illuminating module that are needed.
In conclusion the present invention solid led flip-chip, chip on flexible thin copper base use tin cream die bond;Lead to again Cross Reflow Soldering solidification.Again by whole face molding glue, turn white light then molding fluorescent powder glue if it is blue chip;Then to copper Foil is etched, and copper-clad surface P, N is extremely separated;Again by accurate cutting, core particles on substrate are cut according to certain size, shape At single CSP lamp bead.This mode, which encapsulates CSP lamp bead, convenient and simple, the good heat dissipation of encapsulation, and whole plate encapsulation is high-efficient, at low cost etc. Feature.And particle is small, lamp bead bottom surface welding PAD is bigger than conventional CSP, mounts convenient for lamp bead.Suitable for illumination, decoration, backlight is shown Show equal fields.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of 1 substrate and strengthening membrane of the embodiment of the present invention;
Fig. 2 is the structural schematic diagram of 1 first die bond substrate layer of the embodiment of the present invention;
Fig. 3 is the lamp bead schematic diagram obtained after the embodiment of the present invention 1 is finally cut.
Specific embodiment
Embodiment 1
A kind of ultra thin substrate LED preparation method described in the embodiment of the present invention 1, as shown in Figure 1-3, include following step It is rapid:
1. the copper foil 1 of 30 μ m thicks is cut into the copper foil of 50mm × 50mm size;Get out 50mm × 50mm size PTFE plastic film as strengthening membrane 2, film thickness 2mm;
2. copper foil is attached on strengthening membrane, and Cutting Road label 3 is put in copper foil obverse and reverse marginal position and is become Substrate;
3. boring location hole 4 in four corner edge of substrate;Location hole is used for subsequent die bond, mould top, and the techniques such as etching consolidate substrate It is fixed;
4. corresponding size is that 8mil × 20mil chip reserves multiple chip die bonds position on copper foil, size is to correspond to In 8mil × 20mil;And in non-chip die bond position printing white printing;White oil plays work that is reflective and determining chip die bond position With;
5. needing die bond position at not white oily position, surface turmeric is carried out to copper base;
6. setting progress print solder paste in not white oil level and carrying out solid flip-chip 5;Solidified after Reflow Soldering;It is formed Substrate die bond lamella;
7. substrate die bond lamella whole face molding fluorescent powder glue 6 is become pre- die bond substrate layer;The process flow of molding are as follows: Mold preparation → glue preparation → upper substrate → molding → injecting glue → heating → from mould;
8. the reinforcement film stripping of pre- die bond substrate layer bottom is become the first die bond substrate layer;
9. the bottom copper foil of pair the first die bond substrate layer is etched, the route of needs is etched;Become final die bond Substrate layer;
10. by final die bond substrate layer according to the requirement of chip position and particular electrical circuit, with above-mentioned substrate cut road label Cutting whole into sections is carried out as reference position;
11. the COB illuminating module needed.
The above described is only a preferred embodiment of the present invention, not making in any form to structure of the invention Limitation.Any simple modification, equivalent change and modification to the above embodiments according to the technical essence of the invention, In the range of still falling within technical solution of the present invention.

Claims (4)

1. a kind of ultra thin substrate LED preparation method, which comprises the following steps:
(1) by the copper foil of 20-40 μ m thick, the copper foil of predefined size is cut into;The plastic film for getting out corresponding size is made For strengthening membrane;
(2) copper foil is attached on strengthening membrane, and puts on Cutting Road label in copper foil front or/and the back side, become substrate;
(3) location hole is bored in substrate edges;The location hole is used for subsequent die bond, mould top, and the techniques such as etching fix substrate;
(4) chip die bond position size is determined according to chip size, in non-chip die bond position printing white printing;White oil plays reflective With the effect for determining chip die bond position;
(5) at not white oily position, that is, die bond position is needed, surface turmeric is carried out to copper base;
(6) progress print solder paste is set in not white oil level and carry out solid flip-chip;Solidified after Reflow Soldering;Form substrate Die bond lamella;
(7) substrate die bond lamella whole face molding fluorescent powder glue is become into pre- die bond substrate layer;
(8) by the reinforcement film stripping of pre- die bond substrate layer bottom;Become the first die bond substrate layer;
(9) the bottom copper foil of the first die bond substrate layer is etched, etches the route of needs;Become final die bond substrate Layer;
(10) final die bond substrate layer is marked along aforesaid substrate Cutting Road according to chip position and carries out cutting whole into sections;
(11) lamp bead or COB illuminating module needed.
2. a kind of ultra thin substrate LED preparation method according to claim 1, which is characterized in that the strengthening membrane uses It being made with 260 degree of heatproof or more of plastic film, material can be used such as PI, LCP, PEEK, the plastics such as PTFE, with a thickness of 1mm-3mm。
3. a kind of ultra thin substrate LED preparation method according to claim 1 or 2, which is characterized in that the chip size is logical Often it is 8mil × 20mil, 35mil × 35mil etc., determining chip die bond position size is corresponded to this.
4. a kind of ultra thin substrate LED preparation method according to claim 1 or 2, which is characterized in that the technique of the molding Process are as follows: mold preparation → glue preparation → upper substrate → molding → injecting glue → heating → from mould.
CN201810826170.3A 2018-07-25 2018-07-25 A kind of ultra thin substrate LED preparation method Withdrawn CN109103142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810826170.3A CN109103142A (en) 2018-07-25 2018-07-25 A kind of ultra thin substrate LED preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810826170.3A CN109103142A (en) 2018-07-25 2018-07-25 A kind of ultra thin substrate LED preparation method

Publications (1)

Publication Number Publication Date
CN109103142A true CN109103142A (en) 2018-12-28

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CN201810826170.3A Withdrawn CN109103142A (en) 2018-07-25 2018-07-25 A kind of ultra thin substrate LED preparation method

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111916358A (en) * 2020-08-20 2020-11-10 鑫金微半导体(深圳)有限公司 Novel packaging method of ultra-thin power device
CN112969311A (en) * 2021-01-29 2021-06-15 广东浩轩光电有限公司 Processing technology of CSPLED mounted planting type substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111916358A (en) * 2020-08-20 2020-11-10 鑫金微半导体(深圳)有限公司 Novel packaging method of ultra-thin power device
CN112969311A (en) * 2021-01-29 2021-06-15 广东浩轩光电有限公司 Processing technology of CSPLED mounted planting type substrate

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Application publication date: 20181228

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