CN109087676B - 一种非易失性存储器的编程方法及装置 - Google Patents
一种非易失性存储器的编程方法及装置 Download PDFInfo
- Publication number
- CN109087676B CN109087676B CN201710448442.6A CN201710448442A CN109087676B CN 109087676 B CN109087676 B CN 109087676B CN 201710448442 A CN201710448442 A CN 201710448442A CN 109087676 B CN109087676 B CN 109087676B
- Authority
- CN
- China
- Prior art keywords
- data information
- verification
- data
- programming
- programmed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
Landscapes
- Read Only Memory (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710448442.6A CN109087676B (zh) | 2017-06-14 | 2017-06-14 | 一种非易失性存储器的编程方法及装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710448442.6A CN109087676B (zh) | 2017-06-14 | 2017-06-14 | 一种非易失性存储器的编程方法及装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109087676A CN109087676A (zh) | 2018-12-25 |
CN109087676B true CN109087676B (zh) | 2020-10-20 |
Family
ID=64838875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710448442.6A Active CN109087676B (zh) | 2017-06-14 | 2017-06-14 | 一种非易失性存储器的编程方法及装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109087676B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111951857B (zh) * | 2019-05-15 | 2023-06-09 | 兆易创新科技集团股份有限公司 | 一种非易失性存储器的编程方法及控制装置 |
CN112083891B (zh) * | 2020-09-22 | 2022-12-06 | 深圳芯邦科技股份有限公司 | 一种存储器中数据块的检测方法及相关设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1855306A (zh) * | 2005-04-27 | 2006-11-01 | 恩益禧电子股份有限公司 | 非易失性半导体存储器及其控制方法 |
CN101923900A (zh) * | 2009-06-09 | 2010-12-22 | 北京芯技佳易微电子科技有限公司 | 一种非易失存储器的擦除方法及装置 |
CN106024063A (zh) * | 2016-07-19 | 2016-10-12 | 北京兆易创新科技股份有限公司 | 一种非易失性存储器的数据读取装置及方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080205159A1 (en) * | 2007-02-27 | 2008-08-28 | Macronix International Co., Ltd. | Verification process of a flash memory |
JP5378326B2 (ja) * | 2010-08-17 | 2013-12-25 | 株式会社東芝 | 不揮発性半導体記憶装置とその制御方法 |
-
2017
- 2017-06-14 CN CN201710448442.6A patent/CN109087676B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1855306A (zh) * | 2005-04-27 | 2006-11-01 | 恩益禧电子股份有限公司 | 非易失性半导体存储器及其控制方法 |
CN101923900A (zh) * | 2009-06-09 | 2010-12-22 | 北京芯技佳易微电子科技有限公司 | 一种非易失存储器的擦除方法及装置 |
CN106024063A (zh) * | 2016-07-19 | 2016-10-12 | 北京兆易创新科技股份有限公司 | 一种非易失性存储器的数据读取装置及方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109087676A (zh) | 2018-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10755755B2 (en) | Apparatuses and methods for concurrently accessing different memory planes of a memory | |
US20180101302A1 (en) | Data Storage Device and Data Writing Method Thereof | |
CN109313620B (zh) | 存储器协议 | |
CN109062827B (zh) | 闪存控制装置、闪存控制系统以及闪存控制方法 | |
US20110019475A1 (en) | Interleaved flash storage system and method | |
CN110335635A (zh) | 用来管理一记忆装置的方法以及记忆装置与控制器 | |
JP2010512601A (ja) | メモリにおけるキャッシュを利用した誤り検出及び訂正方法及び装置 | |
US9437327B2 (en) | Combined rank and linear address incrementing utility for computer memory test operations | |
CN111933199B (zh) | 基于存储器的数据读写方法、装置及存储介质 | |
CN107797821A (zh) | 重试读取方法以及使用该方法的装置 | |
CN109087676B (zh) | 一种非易失性存储器的编程方法及装置 | |
US10176876B2 (en) | Memory control method and apparatus for programming and erasing areas | |
US9659661B2 (en) | EEPROM backup method and device | |
US9396769B1 (en) | Memory device and operating method of same | |
KR102307229B1 (ko) | 명령 우선 순위를 이용하는 메모리 프로토콜 | |
KR102024661B1 (ko) | 불휘발성 메모리 장치 및 그것의 데이터 독출 방법 | |
CN109542671A (zh) | 校验数据生成方法及固态硬盘 | |
CN114582402A (zh) | 非易失性存储器及其编程方法、计算机系统 | |
CN114138688A (zh) | 一种数据读取方法、系统、设备以及介质 | |
US20170308296A1 (en) | Staging write requests | |
CN110389724A (zh) | 基于固态硬盘的parity page识别方法和装置 | |
CN113176974B (zh) | 用于验证ip核的方法、装置及系统 | |
JP5200688B2 (ja) | カウントデータ記録装置、および、カウントデータ記録方法 | |
CN110634522A (zh) | 一种非易失存储器擦除方法及装置 | |
JP2020086663A (ja) | メモリアクセス装置、メモリアクセス方法、及びプログラム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200910 Address after: 100083 Beijing City, Haidian District Xueyuan Road No. 30, large industrial building A block 12 layer Applicant after: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. Address before: 202, room 52, building 2, 100176 North View Garden, Daxing District economic and Technological Development Zone, Beijing Applicant before: BEIJING JINGCUN TECHNOLOGY Co.,Ltd. Effective date of registration: 20200910 Address after: 202, room 52, building 2, 100176 North View Garden, Daxing District economic and Technological Development Zone, Beijing Applicant after: BEIJING JINGCUN TECHNOLOGY Co.,Ltd. Address before: 100176, room 52, building 2, 202 North View Garden, Beijing economic and Technological Development Zone, Beijing, Daxing District Applicant before: BEIJING JINGCUN TECHNOLOGY Co.,Ltd. Applicant before: HEFEI BRANCH OF BEIJING JINGCUN TECHNOLOGY Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |