CN109087676B - 一种非易失性存储器的编程方法及装置 - Google Patents
一种非易失性存储器的编程方法及装置 Download PDFInfo
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- CN109087676B CN109087676B CN201710448442.6A CN201710448442A CN109087676B CN 109087676 B CN109087676 B CN 109087676B CN 201710448442 A CN201710448442 A CN 201710448442A CN 109087676 B CN109087676 B CN 109087676B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
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CN201710448442.6A CN109087676B (zh) | 2017-06-14 | 2017-06-14 | 一种非易失性存储器的编程方法及装置 |
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CN109087676A CN109087676A (zh) | 2018-12-25 |
CN109087676B true CN109087676B (zh) | 2020-10-20 |
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Families Citing this family (2)
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CN111951857B (zh) * | 2019-05-15 | 2023-06-09 | 兆易创新科技集团股份有限公司 | 一种非易失性存储器的编程方法及控制装置 |
CN112083891B (zh) * | 2020-09-22 | 2022-12-06 | 深圳芯邦科技股份有限公司 | 一种存储器中数据块的检测方法及相关设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1855306A (zh) * | 2005-04-27 | 2006-11-01 | 恩益禧电子股份有限公司 | 非易失性半导体存储器及其控制方法 |
CN101923900A (zh) * | 2009-06-09 | 2010-12-22 | 北京芯技佳易微电子科技有限公司 | 一种非易失存储器的擦除方法及装置 |
CN106024063A (zh) * | 2016-07-19 | 2016-10-12 | 北京兆易创新科技股份有限公司 | 一种非易失性存储器的数据读取装置及方法 |
Family Cites Families (2)
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US20080205159A1 (en) * | 2007-02-27 | 2008-08-28 | Macronix International Co., Ltd. | Verification process of a flash memory |
JP5378326B2 (ja) * | 2010-08-17 | 2013-12-25 | 株式会社東芝 | 不揮発性半導体記憶装置とその制御方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1855306A (zh) * | 2005-04-27 | 2006-11-01 | 恩益禧电子股份有限公司 | 非易失性半导体存储器及其控制方法 |
CN101923900A (zh) * | 2009-06-09 | 2010-12-22 | 北京芯技佳易微电子科技有限公司 | 一种非易失存储器的擦除方法及装置 |
CN106024063A (zh) * | 2016-07-19 | 2016-10-12 | 北京兆易创新科技股份有限公司 | 一种非易失性存储器的数据读取装置及方法 |
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Effective date of registration: 20200910 Address after: 100083 Beijing City, Haidian District Xueyuan Road No. 30, large industrial building A block 12 layer Applicant after: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. Address before: 202, room 52, building 2, 100176 North View Garden, Daxing District economic and Technological Development Zone, Beijing Applicant before: BEIJING JINGCUN TECHNOLOGY Co.,Ltd. Effective date of registration: 20200910 Address after: 202, room 52, building 2, 100176 North View Garden, Daxing District economic and Technological Development Zone, Beijing Applicant after: BEIJING JINGCUN TECHNOLOGY Co.,Ltd. Address before: 100176, room 52, building 2, 202 North View Garden, Beijing economic and Technological Development Zone, Beijing, Daxing District Applicant before: BEIJING JINGCUN TECHNOLOGY Co.,Ltd. Applicant before: HEFEI BRANCH OF BEIJING JINGCUN TECHNOLOGY Co.,Ltd. |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |