CN109082636A - 一种低二次电子产额非蒸散型吸气剂薄膜的制备方法 - Google Patents

一种低二次电子产额非蒸散型吸气剂薄膜的制备方法 Download PDF

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CN109082636A
CN109082636A CN201810813906.3A CN201810813906A CN109082636A CN 109082636 A CN109082636 A CN 109082636A CN 201810813906 A CN201810813906 A CN 201810813906A CN 109082636 A CN109082636 A CN 109082636A
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substrate surface
secondary electron
electron yield
nonevaporable getter
getter film
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CN109082636B (zh
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王洁
王盛
高勇
杜鑫
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Xian Jiaotong University
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Xi'an Nuclear Science And Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation

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Abstract

本发明公开了一种低二次电子产额非蒸散型吸气剂薄膜的制备方法，包括以下步骤：在衬底表面进行激光刻蚀，使衬底表面呈锯齿形凹槽结构，再在衬底表面溅射镀非蒸散型吸气剂薄膜，得低二次电子产额非蒸散型吸气剂薄膜，其中，衬底表面的刻痕宽度W为1～200μm，衬底表面的刻痕深度D为1～190μm，衬底表面刻痕的半角宽度为10°～80°，该方法制备的非蒸散型吸气剂薄膜的二次电子产额较低，吸气性能更好。

Description

一种低二次电子产额非蒸散型吸气剂薄膜的制备方法
技术领域
本发明涉及一种薄膜的制备方法，具体涉及一种低二次电子产额非蒸散型吸气剂薄膜的制备方法。
背景技术
非蒸散型吸气剂(Non-evaporable getters,NEG)TiZrVHf材料适用于高精密真空器件，其应用范围主要涉及科研领域、工业领域和医疗领域，比如可以应用在粒子探测、粒子加速器、MEMS(Micro Electro-Mechanical Systems)器件、射频信号接收与传输真空管等产品上。该材料的主要作用是吸收超高真空状态下的大部分残余气体，从而进一步提高真空度，同时抑制真空器件中的二次电子倍增，提高真空器件的使用寿命。对于高能粒子加速器而言，将其镀在真空室内壁或者作为插入件放置在超高真空系统中，可使真空室由放气源变为具有抽气作用的真空泵，有效减小加速器储存环内的动态气载，降低其纵向气压梯度，降低由二次电子倍增引起的电子云效应，提高束流的品质。对于电子倍增敏感器件，该薄膜可以维持其良好的工作状态。
现有的非蒸散型吸气剂的二次电子产额一般为1.4～2.5之间[J.W.,Yong Wang,Yanhui Xu,Yuxin Zhang,Bo Zhang,Wei Wei,Tong Zhang,RESEARCH ON LOW SECONDARYELECTRON YIELD MATERIALS FOR FUTURE ACCELERATORS,Proceedings of IPAC2016,Busan,Korea,2016,pp.3284-3286.]，二次电子产额较高，因此需要研制一种低二次电子产额非蒸散型吸气剂薄膜，以降低非蒸散型吸气剂薄膜的二次电子产额。
发明内容
本发明的目的在于克服上述现有技术的缺点，提供了一种低二次电子产额非蒸散型吸气剂薄膜的制备方法，该方法制备的非蒸散型吸气剂薄膜的二次电子产额较低。
为达到上述目的，本发明所述的低二次电子产额非蒸散型吸气剂薄膜的制备方法包括以下步骤：
在衬底表面进行激光刻蚀，使衬底表面呈锯齿形凹槽结构，再在衬底表面溅射镀非蒸散型吸气剂薄膜，得到低二次电子产额非蒸散型吸气剂薄膜，其中，衬底表面的刻痕宽度W为1～200μm，衬底表面的刻痕深度D为1～190μm，衬底表面刻痕的半角宽度为10°～80°。
激光刻蚀后衬底的表面积为激光刻蚀前衬底表面积的1.1-5倍。
采用溅射镀膜装置在衬底表面溅射镀非蒸散型吸气剂薄膜。
本发明具有以下有益效果：
本发明所述的低二次电子产额非蒸散型吸气剂薄膜的制备方法在具体操作时，先在衬底的表面进行激光刻蚀，使其呈锯齿形凹槽结构，然后在衬底表面溅射镀非蒸散型吸气剂薄膜，所述锯齿形凹槽结构有利于降低薄膜的二次电子产额，同时提高单位面积上薄膜的表面积，从而提高单位面积上吸气剂薄膜的吸气性能，操作方便、简单。
附图说明
图1为本发明中经激光刻蚀后衬底断面的形貌图；
图2为本发明制备得到的低二次电子产额非蒸散型吸气剂薄膜的示意图；
图3为本发明中激光刻蚀后衬底的扫描电镜表面形貌图；
图4为镀膜后衬底的扫描电镜表面形貌图；
图5为镀膜前后激光处理衬底的二次电子产额测试结果图。
具体实施方式
下面结合附图对本发明做进一步详细描述：
参考图1及图2，本发明所述的低二次电子产额非蒸散型吸气剂薄膜的制备方法包括以下步骤：在衬底表面进行激光刻蚀，使衬底表面呈锯齿形凹槽结构，再在衬底表面溅射镀非蒸散型吸气剂薄膜，得到低二次电子产额非蒸散型吸气剂薄膜，其中，衬底表面的刻痕宽度W为1～200μm，衬底表面的刻痕深度D为1～190μm，衬底表面刻痕的半角宽度为10°～80°，激光刻蚀后衬底的表面积为激光刻蚀前衬底表面积的1.1-5倍。
采用溅射镀膜装置在衬底表面溅射镀非蒸散型吸气剂薄膜，镀膜过程中真空腔体内通入氩气或者氪气，进行辉光放电。
衬底采用激光处理，通过选择合适的激光参数可获得低二次电子产额的表面形貌，然后进行溅射镀膜。通过调整激光刻蚀参数及镀膜参数等，可使非蒸散型吸气剂薄膜如图2所示，这种凹槽式结构有助于降低材料表面的二次电子产额，同时凹槽式的薄膜结构提高了薄膜的表面积，有利于提高单位面积上吸气剂薄膜的吸气性能，与原有的吸气剂材料相比，本发明制备的低二次电子产额非蒸散型吸气剂薄膜具有更低的二次电子产额及更好的吸气性能。
通过二次电子产额测试仪器对本发明制备的低二次电子产额非蒸散型吸气剂薄膜进行二次电子产额测试，测试结果表明：当入射电子能量在50～3000eV之间变化时，镀膜之后样品的最大二次电子产额为1.06，未镀膜的激光处理样品的最大二次电子产额为1.25。由测试结果可知，这种镀在激光处理过样品表面的薄膜不仅具有良好的吸气性能，还具有非常低的二次电子产额。当二次电子产额低于1时，入射电子打在样品表面，不会出现二次电子倍增现象，因此本发明制备的低二次电子产额非蒸散型吸气剂薄膜能够应用在加速器真空管道内部，不仅可以降低管道的纵向梯度，还可以抑制电子云效应的产生，维持加速器中束流的稳定运行。

Claims (3)

1.一种低二次电子产额非蒸散型吸气剂薄膜的制备方法，其特征在于，包括以下步骤：
在衬底表面进行激光刻蚀，使衬底表面呈锯齿形凹槽结构，再在衬底表面溅射镀非蒸散型吸气剂薄膜，得到低二次电子产额非蒸散型吸气剂薄膜，其中，衬底表面的刻痕宽度W为1～200μm，衬底表面的刻痕深度D为1～190μm，衬底表面刻痕的半角宽度为10°～80°。
2.根据权利要求1所述的低二次电子产额非蒸散型吸气剂薄膜的制备方法，其特征在于，激光刻蚀后衬底的表面积为激光刻蚀前衬底表面积的1.1-5.0倍。
3.根据权利要求1所述的低二次电子产额非蒸散型吸气剂薄膜的制备方法，其特征在于，采用溅射镀膜装置在衬底表面溅射镀非蒸散型吸气剂薄膜。
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CN109680249A (zh) * 2019-01-25 2019-04-26 苏州大学 非蒸散型薄膜吸气剂及其制备方法
CN109767856A (zh) * 2018-12-28 2019-05-17 西安交通大学 一种中子源靶系统
CN111705318A (zh) * 2020-05-27 2020-09-25 西安交通大学 一种基于泡沫金属衬底的五元钛合金吸气剂

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Publication number Priority date Publication date Assignee Title
CN109767856A (zh) * 2018-12-28 2019-05-17 西安交通大学 一种中子源靶系统
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CN111705318A (zh) * 2020-05-27 2020-09-25 西安交通大学 一种基于泡沫金属衬底的五元钛合金吸气剂

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