CN109065613A - A kind of manufacturing method of vertical structure germanium slot field-effect transistor device - Google Patents
A kind of manufacturing method of vertical structure germanium slot field-effect transistor device Download PDFInfo
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- CN109065613A CN109065613A CN201810758788.0A CN201810758788A CN109065613A CN 109065613 A CN109065613 A CN 109065613A CN 201810758788 A CN201810758788 A CN 201810758788A CN 109065613 A CN109065613 A CN 109065613A
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 68
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 230000005669 field effect Effects 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 51
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000000137 annealing Methods 0.000 claims abstract description 49
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 41
- -1 hafnium nitride Chemical class 0.000 claims abstract description 29
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 25
- 229910000927 Ge alloy Inorganic materials 0.000 claims abstract description 13
- TXFYZJQDQJUDED-UHFFFAOYSA-N germanium nickel Chemical compound [Ni].[Ge] TXFYZJQDQJUDED-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 claims abstract description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 238000005224 laser annealing Methods 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000011982 device technology Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 241000588731 Hafnia Species 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses a kind of manufacturing methods of vertical structure germanium slot field-effect transistor device.It deposits germanium film and nickel film on substrate first, and source electrode of the nickel germanium alloy film as device is formed by annealing；Secondly the first insulating layer of thin-film, hafnium nitride film and second insulating layer film are deposited on source electrode；It etches the first insulating layer of thin-film, hafnium nitride film and second insulating layer film and forms channel hole, and the hafnium nitride for aoxidizing channel hole inner wall generates oxynitriding hafnium or hafnium oxide, the gate insulation layer as device；The deposited amorphous germanium in channel hole, and pass through the channel for making germanium crystal form device of annealing；Finally channel disposed thereon nickel film and anneal form drain electrode of the nickel germanium alloy as device.The present invention sufficiently lowers the technology difficulty in preparation vertical structure device process using the method that grid stacking prepares channel again is first prepared, and reduces process costs, and device obtained has the advantages such as driving current is big, integration density is high.
Description
Technical field
The invention belongs to field of semiconductor devices, are related to a kind of high-performance vertical structure germanium slot field-effect transistor device
Manufacturing method.
Background technique
Silicon slot field-effect transistor (Si MOSFET) is the most basic component units of modern integrated circuits, is integrated electricity
Realize the basis of the functions such as operation, storage in road.Measure the unlatching electricity that the most important index of MOSFET element performance height is device
Stream, the method by reducing MOSFET element channel length are able to ascend the performance of device.By semicentennial technological progress,
The characteristic size of MOSFET element is smaller and smaller, and the MOSFET element channel length of volume production grade has reached 20nm at present.Further
The method for reducing device size will lead to serious short-channel effect, it is difficult to further promote performance of integrated circuits.In order to solve
This problem proposes germanium channel mosfet (Ge MOSFET) device technology.Using germanium carrier mobility more higher than silicon,
MOSFET element performance can be persistently promoted under the premise of not reducing device size.Domestic and international each large enterprises and scientific research institution are equal
Using Ge MOSFET element technology as one of the candidate scheme of next-generation high performance integrated circuit device.It is fast by recent years
Speed development, Ge MOSFET element technology achieve marked improvement, and the firing current for being mainly reflected in device has been significantly higher than tradition
Si MOSFET element, it is shown that the wide application prospect of GeMOSFET device technology.
In addition to increasing bigger device firing current, the integrated level for promoting device is also to obtain more high density integrated circuit performance
Effective means.Channel is in and is parallel to substrate surface in traditional MOSFET element, due to the source electrode of device, drain electrode, channel etc.
The area in region can not continue to reduce, and limit the integration density of MOSFET element.Utilize the MOSFET element (ditch of vertical structure
Road is perpendicular to substrate surface), it can sufficiently reduce the projected area of device, promote the integrated level of device.Vertical structure germanium channel
Source electrode, channel and the drain region of field effect transistor stack from bottom to top, surrounding of the grid stacking around vertical channel.In this way
Design feature cause traditional method that channel prepares grid stacking again that first prepares to be difficult to form the germanium ditch place where Taoist rites are performed of vertical structure
Effect transistor.Therefore, the present invention proposes a kind of method for first preparing grid stacking and preparing channel again, realizes vertical structure germanium ditch
The preparation of road field effect transistor.
Summary of the invention
It is an object of the invention to be directed to the deficiency of existing silicon slot field-effect transistor device, provide a kind of based on vertical
The manufacturing method of the germanium channelling effect transistor device of channel structure.
The purpose of the present invention is achieved through the following technical solutions: a kind of vertical structure germanium slot field-effect transistor
The manufacturing method of device, this method comprises the following steps:
(1) it is sequentially depositing germanium film and nickel film on substrate, and nickel germanium alloy film is formed as device by annealing
Source electrode；
(2) the first insulating layer of thin-film, hafnium nitride film and second insulating layer film are sequentially depositing on source electrode；
(3) the first insulating layer of thin-film, hafnium nitride film and second insulating layer film are etched and forms channel hole, and oxidation ditch
The hafnium nitride of road hole inner wall generates oxynitriding hafnium or hafnium oxide, the gate insulation layer as device；
(4) the deposited amorphous germanium in channel hole, and pass through the channel for making germanium crystal form device of annealing；
(5) channel disposed thereon nickel film and anneal form drain electrode of the nickel germanium alloy as device, ultimately form vertically
Structure germanium slot field-effect transistor device.
Further, the substrate material is including but not limited to silicon, silicon face cvd silicon oxide, quartz, sapphire；It is described
First insulating layer and the material of second insulating layer are including but not limited to silica, silicon nitride, aluminium oxide and hafnium oxide.
Further, in the step (1), the method for depositing germanium film and nickel film is hot evaporation or sputtering；Annealing
Method is thermal annealing, flash lamp annealing or laser annealing；In the step (2), the first insulating layer and second insulating layer are deposited
Method is atomic layer deposition；The method of cvd nitride hafnium film is atomic layer deposition or sputtering.
Further, in the step (2), the first insulating layer of etching, hafnium nitride film and second insulating layer form channel
The method of hole is reactive ion etching.
Further, in the step (3), the method for aoxidizing the hafnium nitride of channel hole inner wall is thermal oxide or ozone oxygen
Change.
Further, in the step (4), the method for deposited amorphous germanium is hot evaporation, sputtering or change in channel hole
Learn vapor deposition；Annealing makes method thermal annealing, flash lamp annealing or the laser annealing of germanium crystal.
Further, in the step (5), the method for deposition nickel film is hot evaporation or sputtering；The method of annealing is heat
Annealing, flash lamp annealing or laser annealing.
Further, in the step (2) hafnium nitride film with a thickness of 20 to 500 nanometers, the first insulating layer and second
The thickness of insulating layer is 5 to 10 nanometers；Gate insulation layer with a thickness of 2 to 20 nanometers in the step (3).
Further, channel hole is cylindrical in the step (3), and a diameter of 10 to 25 nanometers.
Further, in the step (5), the lower surface of drain electrode is not higher than the upper surface of second insulating layer.
The beneficial effects of the present invention are: 1, it can be obtained under the premise of not changing device size using germanium channel bigger
Driving current promotes the performance of device；2, reduce the projected area of device by vertical channel structure, it is close to increase integrating for device
Degree obtains high performance integrated circuit；3, using cvd nitride hafnium film is first passed through as metal gates, then etch nitride hafnium is thin
Film forms channel hole, and the hafnium nitride of oxidation channel hole inner wall forms gate insulation layer, so that the grid stacking of device is made, most
The channel of device is made in the deposit Germanium in channel hole afterwards；The method for preparing channel again by first preparing grid stacking above, fills
Divide the technology difficulty reduced in preparation vertical structure device process, reduces process costs.The present invention utilizes vertical structure
Germanium channel, with carrier mobility is high, device projected area is small, integrated level is high, compatible with existing integrated circuit fabrication process
Etc. advantages, have broad application prospects in the fields such as programmable logic device and super large-scale integration.
Detailed description of the invention
Fig. 1 (a) is to grow germanium film and the first nickel film schematic diagram on substrate；
Fig. 1 (b) is that annealing makes germanium film and the first nickel film react the source electrode schematic diagram for generating nickel germanium alloy as device；
Fig. 2 (a) is to illustrate in one insulating layer of nickel germanium alloy film surface growth regulation, hafnium nitride film and second insulating layer
Figure；
Fig. 2 (b) is that etching second insulating layer, hafnium nitride film and the first insulating layer form channel hole schematic diagram；
Fig. 2 (c) is that oxidation channel hole inner wall generates oxynitriding hafnium or hafnium oxide gate insulation layer schematic diagram；
Fig. 3 (a) is the deposited amorphous germanium schematic diagram in channel hole；
Fig. 3 (b) is to make amorphous germanium crystal using annealing, forms the channel schematic diagram of device；
Fig. 4 (a) is that the second nickel film schematic diagram is deposited on channel；
Fig. 4 (b) is to react the second nickel film with the germanium in channel using annealing to generate nickel germanium alloy as the leakage of device
Pole schematic diagram；
Fig. 5 is the structure chart of vertical structure germanium slot field-effect transistor device；
In figure, quartz substrate 10, germanium film 11, the first nickel film 12, source electrode 13, the first insulating layer 20, hafnium nitride film
21, second insulating layer 22, gate insulation layer 23, amorphous germanium 30, channel 31, the second nickel film 40, drain electrode 41.
Specific embodiment
With reference to the accompanying drawing and specific embodiment invention is further described in detail.
A kind of manufacturing method of vertical structure germanium slot field-effect transistor device provided by the invention, including walk as follows
It is rapid:
(1) it is sequentially depositing germanium film and the first nickel film on substrate, and nickel germanium alloy film conduct is formed by annealing
The source electrode of device；
(2) the first insulating layer of thin-film, hafnium nitride film and second insulating layer film are sequentially depositing on source electrode；
(3) the first insulating layer of thin-film, hafnium nitride film and second insulating layer film are etched and forms channel hole, and oxidation ditch
The hafnium nitride of road hole inner wall generates oxynitriding hafnium or hafnium oxide, the gate insulation layer as device；
(4) the deposited amorphous germanium in channel hole, and pass through the channel for making germanium crystal form device of annealing；
(5) channel disposed thereon the second nickel film and anneal form drain electrode of the nickel germanium alloy as device, ultimately form
Vertical structure germanium slot field-effect transistor device.
Further, the substrate material is including but not limited to silicon, silicon face cvd silicon oxide, quartz, sapphire.
Further, the hafnium nitride film with a thickness of 20 to 500 nanometers.
Further, first insulating layer and the material of second insulating layer are including but not limited to silica, silicon nitride, oxygen
Change aluminium and hafnium oxide, with a thickness of 5 to 10 nanometers.
Further, the channel hole is cylindrical, a diameter of 10 to 25 nanometers.
Further, the gate insulation layer with a thickness of 2 to 20 nanometers.
Further, in the step (1), the method for depositing germanium film and nickel film is hot evaporation or sputtering；Annealing
Method is thermal annealing, flash lamp annealing or laser annealing.
Further, in the step (2), the method for depositing the first insulating layer and second insulating layer is atomic layer deposition；
The method of cvd nitride hafnium film is atomic layer deposition or sputtering.
Further, in the step (2), the first insulating layer of etching, hafnium nitride film and second insulating layer form channel
The method of hole is reactive ion etching.
Further, in the step (3), the method for aoxidizing the hafnium nitride of channel hole inner wall is thermal oxide or ozone oxygen
Change.
Further, in the step (4), the method for deposited amorphous germanium is hot evaporation, sputtering or change in channel hole
Learn vapor deposition；Annealing makes method thermal annealing, flash lamp annealing or the laser annealing of germanium crystal；
Further, in the step (5), the method for the second nickel film of deposition is hot evaporation or sputtering；The method of annealing
For thermal annealing, flash lamp annealing or laser annealing.
Embodiment 1: in the present embodiment, using quartz substrate, the preparation of vertical structure germanium slot field-effect transistor device
Method is as follows:
(1) as shown in Fig. 1 (a), germanium film 11 is deposited in quartz substrate 10, deposition method is chemical vapor deposition, heat
Vapor deposition or sputtering；The first nickel film 12 is deposited on germanium film 11, deposition method is chemical vapor deposition, hot evaporation or sputtering；
11 thickness of germanium film is identical as 12 thickness of the first nickel film；
(2) as shown in Fig. 1 (b), germanium film 11 and the first nickel film 12 are reacted by annealing and generates the conduct of nickel germanium alloy
The source electrode 13 of device；The method of annealing is thermal annealing, flash lamp annealing or laser annealing；
(3) as shown in Fig. 2 (a), the first insulating layer 20, hafnium nitride film 21 and the second insulation are sequentially depositing on source electrode 13
Layer 22；First insulating layer 20 and the material of second insulating layer 22 are including but not limited to silica, silicon nitride, aluminium oxide and oxidation
Hafnium, with a thickness of 5 to 10 nanometers, deposition method is atomic layer deposition；Hafnium nitride film 21 with a thickness of 20 to 500 nanometers, deposition
Method is atomic layer deposition or sputtering；
(4) as shown in Fig. 2 (b), etching second insulating layer 22, hafnium nitride film 21 and the first insulating layer 20 are until source electrode 13
Surface forms channel hole, and channel hole is preferably cylindrical, and a diameter of 10 to 25 nanometers, but shape is not limited to cylinder,
Such as rectangle, irregular shape can be achieved, the method for etching is reactive ion etching；
(5) as shown in Fig. 2 (c), the hafnium nitride of oxidation channel hole inner wall forms oxynitriding hafnium or hafnia film conduct
The gate insulation layer 23 of device；The method of oxidation is thermal oxide or ozone oxidation；
(6) as shown in Fig. 3 (a), the deposited amorphous germanium 30 in channel hole, the upper surface of amorphous germanium 30 is higher than the second insulation
The upper surface of layer 22；Deposition method is chemical vapor deposition, hot evaporation or sputtering；
(7) as shown in Fig. 3 (b), annealing makes amorphous germanium 30 crystallize the channel 31 for forming monocrystalline germanium as device；The side of annealing
Method is thermal annealing, flash lamp annealing or laser annealing；
(8) as shown in Fig. 4 (a), the second nickel film 40 is deposited on 31 surface of channel, the method for deposition is hot evaporation or splashes
It penetrates；
(9) as shown in Fig. 4 (b), annealing makes the second nickel film 40 react generation nickel germanium alloy with the germanium in channel 31, as
The drain electrode 41 of device；The lower surface of drain electrode 41 is not higher than the upper surface of second insulating layer 22；The method of annealing be rapid thermal annealing,
Flash lamp annealing or laser annealing；
(10) Fig. 5 is the vertical structure germanium slot field-effect transistor device finally obtained.
Above-described embodiment is used to illustrate the present invention, rather than limits the invention, in spirit of the invention and
In scope of protection of the claims, to any modifications and changes that the present invention makes, protection scope of the present invention is both fallen within.
Claims (10)
1. a kind of manufacturing method of vertical structure germanium slot field-effect transistor device, which is characterized in that this method includes as follows
Step:
(1) it is sequentially depositing germanium film and nickel film on substrate, and source of the nickel germanium alloy film as device is formed by annealing
Pole；
(2) the first insulating layer of thin-film, hafnium nitride film and second insulating layer film are sequentially depositing on source electrode；
(3) the first insulating layer of thin-film, hafnium nitride film and second insulating layer film are etched and forms channel hole, and aoxidize channel hole
The hafnium nitride of hole inner wall generates oxynitriding hafnium or hafnium oxide, the gate insulation layer as device；
(4) the deposited amorphous germanium in channel hole, and pass through the channel for making germanium crystal form device of annealing；
(5) channel disposed thereon nickel film and anneal form drain electrode of the nickel germanium alloy as device, ultimately form vertical structure
Germanium slot field-effect transistor device.
2. the manufacturing method of vertical structure germanium slot field-effect transistor device according to claim 1, which is characterized in that
The substrate material is including but not limited to silicon, silicon face cvd silicon oxide, quartz, sapphire；First insulating layer and second
The material of insulating layer is including but not limited to silica, silicon nitride, aluminium oxide and hafnium oxide.
3. the manufacturing method of vertical structure germanium slot field-effect transistor device according to claim 1, which is characterized in that
In the step (1), the method for depositing germanium film and nickel film is hot evaporation or sputtering；The method of annealing is thermal annealing, flash of light
Lamp annealing or laser annealing；In the step (2), the method for depositing the first insulating layer and second insulating layer is atomic layer deposition；
The method of cvd nitride hafnium film is atomic layer deposition or sputtering.
4. the manufacturing method of vertical structure germanium slot field-effect transistor device according to claim 1, which is characterized in that
In the step (2), the method that the first insulating layer of etching, hafnium nitride film and second insulating layer form channel hole be reaction from
Son etching.
5. the manufacturing method of vertical structure germanium slot field-effect transistor device according to claim 1, which is characterized in that
In the step (3), the method for aoxidizing the hafnium nitride of channel hole inner wall is thermal oxide or ozone oxidation.
6. the manufacturing method of vertical structure germanium slot field-effect transistor device according to claim 1, which is characterized in that
In the step (4), the method for deposited amorphous germanium is hot evaporation, sputtering or chemical vapor deposition in channel hole；Annealing makes
The method of germanium crystal is thermal annealing, flash lamp annealing or laser annealing.
7. the manufacturing method of vertical structure germanium slot field-effect transistor device according to claim 1, which is characterized in that
In the step (5), the method for deposition nickel film is hot evaporation or sputtering；The method of annealing be thermal annealing, flash lamp annealing or
Laser annealing.
8. the manufacturing method of vertical structure germanium slot field-effect transistor device according to claim 1, which is characterized in that
In the step (2) hafnium nitride film with a thickness of 20 to 500 nanometers, the thickness of the first insulating layer and second insulating layer is 5
To 10 nanometers；Gate insulation layer with a thickness of 2 to 20 nanometers in the step (3).
9. the manufacturing method of vertical structure germanium slot field-effect transistor device according to claim 1, which is characterized in that
Channel hole is cylindrical in the step (3), a diameter of 10 to 25 nanometers.
10. the manufacturing method of vertical structure germanium slot field-effect transistor device according to claim 1, feature exist
In in the step (5), the lower surface of drain electrode is not higher than the upper surface of second insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810758788.0A CN109065613B (en) | 2018-07-11 | 2018-07-11 | Method for manufacturing germanium channel field effect transistor device with vertical structure |
Applications Claiming Priority (1)
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| CN111210860A (en) * | 2019-12-31 | 2020-05-29 | 浙江大学 | Three-state content addressable memory based on 3D MOS device |
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