CN109065479A - Silicon etching machine and its operating method - Google Patents
Silicon etching machine and its operating method Download PDFInfo
- Publication number
- CN109065479A CN109065479A CN201810840487.2A CN201810840487A CN109065479A CN 109065479 A CN109065479 A CN 109065479A CN 201810840487 A CN201810840487 A CN 201810840487A CN 109065479 A CN109065479 A CN 109065479A
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- edge position
- position control
- control ring
- etching machine
- silicon etching
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- 238000005530 etching Methods 0.000 title claims abstract description 90
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 73
- 239000010703 silicon Substances 0.000 title claims abstract description 73
- 238000011017 operating method Methods 0.000 title claims description 10
- 238000013461 design Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 19
- 239000013078 crystal Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of silicon etching machines, are related to semiconductor integrated circuit manufacturing technology, including cavity；Sucker and Edge position control ring, sucker and Edge position control ring are within the cavity, and sucker is circumferentially positioned at the periphery of sucker for carrying wafer, Edge position control ring, and in the side for placing wafer, has a step between Edge position control ring and sucker；Lifting device, lifting device is within the cavity, and connects with Edge position control ring group, for raising or reducing Edge position control ring；And control circuit, control circuit connects the menu selection unit of lifting device and silicon etching machine, for receiving the menu information of silicon etching machine, and the menu information output one of silicon etching machine controls signal to lifting device based on the received, so that height of the lifting device according to the step between control signal control Edge position control ring and sucker, to improve crystal round fringes process window, wafer yield is improved.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit manufacturing technology more particularly to a kind of silicon etching machine and its operation sides
Method.
Background technique
In semiconductor integrated circuit technology, as integrated level is higher and higher, semiconductor crystal wafer is incrementally increased from 4 cun, 5 cun
To the larger sizes such as 12 cun or even 18 cun, and wish that the critical size of wafer is smaller and smaller, from 45/40nm toward 28/20nm liter
Grade, process window is increasing, and product yield is higher and higher.
Therefore in semiconductor integrated circuit manufacture, it is badly in need of improving the device and method of product yield.
Summary of the invention
The purpose of the present invention is to provide a kind of silicon etching machines to improve wafer yield to improve crystal round fringes process window.
Silicon etching machine provided by the invention, comprising: cavity；Sucker and Edge position control ring, the sucker and the edge control
Ring processed is located in the cavity, and the sucker is circumferentially positioned at the outer of the sucker for carrying wafer, the Edge position control ring
It encloses, and in the side for placing the wafer, there is a step between the Edge position control ring and the sucker；Lifting device, institute
It states lifting device to be located in the cavity, and is connect with the Edge position control ring group, for raising or reducing the Edge position control ring；
And control circuit, the control circuit connects the menu selection unit of the lifting device and silicon etching machine, for receiving silicon
The menu information of etching machine, and based on the received the one control signal of menu information output of silicon etching machine to the lifting device,
So that the lifting device controls the step between the Edge position control ring and the sucker according to the control signal
Highly.
Further, the lifting device includes a stepper motor and a support device, one end of the support device
It is connect with the stepper motor group, the other end of the support device connects with the Edge position control ring group.
Further, the support device includes multiple thimbles, and the multiple thimble is located at the Edge position control ring
The side opposite with wafer.
Further, the multiple thimble is located at the lower section of the Edge position control ring.
Further, the control circuit includes a controller, the menu of silicon etching machine selection when receiving wafer etching
Information, output one and highly relevant control signal to the lifting device, the lifting device according to it is highly relevant
Control signal control the step height between the Edge position control ring and the sucker.
Further, the lifting device controls the Edge position control ring with highly relevant control signal according to described
The height raised.
Further, the lifting device includes a stepper motor, the described and height phase of the control circuit output
The control signal of pass is the step number of the stepper motor steps.
Further, the controller is a PLC controller.
The present invention also provides the operating methods of the silicon etching machine, comprising: S1: designing so that side in the cavity of silicon etching machine
There is different step heights between edge control ring and sucker, and vacuum is carried out to edge control ring under different step heights
Potential test under radio frequency obtains the target step between Edge position control ring and sucker according to the potential of the Edge position control ring measured
Highly；S2: the thickness change that Edge position control ring etches Edge position control ring caused by every wafer under each menu of silicon etching machine is calculated
Change amount；And S3: one step height control device of design, the step height control device is according to Edge position control ring in silicon etching
It is etched under each menu of machine between the amounts of thickness variation control Edge position control ring of Edge position control ring caused by every wafer and sucker
Step height is the target step height.
Further, step S2 further includes step S21, calculates the Edge position control ring and tires out under each menu of silicon etching machine
Amounts of thickness variation when product n wafer of etching, and then Edge position control ring is calculated and etches every under each menu of silicon etching machine
The amounts of thickness variation of Edge position control ring caused by wafer, wherein n >=1.
Further, the step height control device includes the lifting device and the control circuit.
Further, the lifting device includes a stepper motor and a support device, one end of the support device
It is connect with the stepper motor group, the other end of the support device connects with the Edge position control ring group, the motor and the control
Circuit connection processed, receives the control signal of the control circuit output, and controls the support device according to the control signal
Raise or reduce the height of the Edge position control ring.
Further, the control signal is the step number signal that the stepper motor needs stepping.
In an embodiment of the present invention, by the way that a lifting device and a control circuit are arranged in the cavity of silicon etching machine,
To compensate Edge position control ring amount thinning in etching process, crystal round fringes process window is improved, improves wafer yield.
Detailed description of the invention
Fig. 1 is the schematic diagram of the silicon etching machine of one embodiment of the invention.
Fig. 2 is the operational flowchart of the silicon etching machine of one embodiment of the invention.
The reference numerals are as follows for main element in figure:
100, silicon etching machine；110, cavity；111, sucker；113, Edge position control ring；120, wafer；130, lifting device；
140, control circuit；132, stepper motor；134, support device.
Specific embodiment
Below in conjunction with attached drawing, clear, complete description is carried out to the technical solution in the present invention, it is clear that described
Embodiment is a part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is general
Logical technical staff's all other embodiment obtained under the premise of not making creative work belongs to what the present invention protected
Range.
Silicon etching machine is the key equipment in semiconductor integrated circuit manufacture, referring to Fig. 1, Fig. 1 is the silicon of an embodiment
The schematic diagram of etching machine.As shown in Figure 1, silicon etching machine 100 includes cavity 110, it include sucker 111 and edge control in cavity 110
Ring 113 processed, sucker are circumferentially positioned at the periphery of sucker 111 for carrying wafer 120, Edge position control ring 113, and in placement wafer
120 side has a step namely Edge position control ring 113 to be higher by institute than sucker 111 between Edge position control ring 113 and sucker 111
State the height of step.Edge position control ring 113 is expendable parts, and in the etching process of wafer, Edge position control ring 113 also can be by
Etch thinning, the step between Edge position control ring 113 and sucker 111 is lower, according to Langmuir test result, plasma electric slurry
Potential declines with the thinning of edge control ring 113, and then influences the etching direction of wafer, and crystal round fringes process window is caused to become
Small, wafer yield is lower.In current technique, need often to carry out cavity maintenance, and replace Edge position control ring 113, not only shadow
The utilization rate of equipment is rung, improves cost, and lower in the yield that Edge position control ring 113 replaces the wafer produced in gap.
In one embodiment of the invention, a kind of silicon etching machine equipment is provided.Specifically, Fig. 1 is seen, silicon etching of the invention
Machine further comprises lifting device 130 and control circuit 140.Lifting device 130 is located in cavity 110, and and Edge position control
113 groups of ring connect, for raising or reducing Edge position control ring 113.Control circuit 140 connects lifting device 130 and silicon etching machine
Menu selection unit, for receiving the menu information of silicon etching machine, and based on the received, the menu information of silicon etching machine exports control
Signal processed is to lifting device 130, so that lifting device 130 is according between control signal control Edge position control ring 113 and sucker 111
Step height.Even if such Edge position control ring 113 is thinning in etching process, Edge position control ring 113 will not be caused and inhaled
Step height between disk 111 reduces, and the potential of plasma electric slurry is caused to decline, and crystal round fringes process window becomes smaller, wafer
The bad phenomenon that yield is lower.
In an embodiment of the present invention, lifting device 130 includes a stepper motor 132 and a support device 134, support dress
The one end for setting 134 and 132 groups of stepper motor connect, and the other end connects with 113 groups of Edge position control ring, pass through the control branch of stepper motor 132
Support arrangement 134 is raised or is reduced, and then is controlled Edge position control ring 113 and raised or reduce, so control Edge position control ring 113 and inhale
Step height between disk 111.
In an embodiment of the present invention, the support device 134 includes multiple thimbles, and multiple thimbles are located at Edge position control ring
113 side opposite with wafer 120.Specifically, in an embodiment of the present invention, multiple thimbles are located at Edge position control ring 113
Lower section, as shown in Figure 1, wafer 120 is located at the upper end of sucker 111, thimble is located at the downside of Edge position control ring 113.
In an embodiment of the present invention, control circuit 140 includes a controller, and silicon etching machine selects when receiving wafer etching
Menu information, the Edge position control ring 113 in the etching process of wafer is calculated according to menu information and is etched and consumes
The height that thickness namely Edge position control ring 113 need to be elevated, so output and highly relevant control signal to lifting device
130, lifting device 130 controls the step between Edge position control ring 113 and sucker 111 highly relevant control signal according to this
Highly.Further, lifting device 130 is raised according to this with highly relevant control signal control Edge position control ring 113
Highly, the step height so between control Edge position control ring 113 and sucker 111, is consumed with compensating wafer in etching process
Height.It more specifically, include the silicon etching machine of a stepper motor 132 and a support device 134, control for lifting device 130
What circuit 140 processed exported is the step number of 132 stepping of stepper motor with highly relevant control signal, for selected stepping horse
It reaches, one step of stepper motor steps, the raised height of support device 134 is determining, therefore stepping is calculated in control circuit 140
The step number of 132 stepping of motor, i.e., the step height between controllable Edge position control ring 113 and sucker 111.
In an embodiment of the present invention, controller 140 is PLC controller.In an embodiment of the present invention, controller 140
It can be also other control circuits, such as analog controller or digitial controller, as long as can be calculated according to the menu information of selection
To with highly relevant control signal.
Specifically, in an embodiment of the present invention, also providing a kind of operating method of silicon etching machine shown in FIG. 1.Specifically
Can refer to Fig. 2, Fig. 2 is the operational flowchart of the silicon etching machine of one embodiment of the invention.As shown in Fig. 2, the present invention one is implemented
The operating procedure of silicon etching machine of example includes:
S1: design so that in the cavity of silicon etching machine between Edge position control ring and sucker have different step heights, and
The potential test under vacuum radio frequency is carried out to edge control ring under different step heights, according to the Edge position control ring measured
Potential obtains the target step height between Edge position control ring and sucker.
S2: the thickness that Edge position control ring etches Edge position control ring caused by every wafer under each menu of silicon etching machine is calculated
Variable quantity.
In an embodiment of the present invention, step S2 further includes step S21, calculates Edge position control ring in each menu of silicon etching machine
Amounts of thickness variation when lower n wafer of accumulation etching, and then Edge position control ring is calculated and is etched under each menu of silicon etching machine
The amounts of thickness variation of Edge position control ring caused by every wafer, wherein n >=1.Such as in an embodiment of the present invention, silicon etching machine packet
Menu a1, menu a2 and menu a3 are included, X1 wafer is etched at menu a1, the thickness for measuring Edge position control ring 113 is thinning
A1mm；X2 wafer is etched at menu a2, measures the thinning A2mm of thickness of Edge position control ring 113；X3 is etched at menu a3
Wafer measures the thinning A3mm of thickness of Edge position control ring 113, and Edge position control ring 113 is so calculated and selects in silicon etching
The amounts of thickness variation that Edge position control ring caused by every wafer is etched under machine menu a1 is A1/X1；Edge position control ring is calculated
113 etch the amounts of thickness variation of Edge position control ring caused by every wafer in the case where silicon etching machine selects menu a2 as A2/X2；It calculates
Obtain the thickness change that Edge position control ring 113 etches Edge position control ring caused by every wafer in the case where silicon etching machine selects menu a3
Amount is A3/X3.Specifically see table 1:
Table 1
S3: one step height control device of design, the step height control device is according to Edge position control ring in silicon etching
It is etched under each menu of machine between the amounts of thickness variation control Edge position control ring of Edge position control ring caused by every wafer and sucker
Step height is target step height.
In an embodiment of the present invention, step height control device includes lifting device 130 and control circuit 140, lifting
Device 130 is located in cavity 110, and connects with 113 groups of Edge position control ring, for raising or reducing Edge position control ring 113.Control electricity
Road 140 connects the menu selection unit of lifting device 130 and silicon etching machine, for receiving the menu information of silicon etching machine, and root
A control signal is exported to lifting device 130, so that lifting device 130 is according to the control according to the menu information of received silicon etching machine
Step height between signal control Edge position control ring 113 and sucker 111 processed.
Specifically, in an embodiment of the present invention, lifting device 130 includes a stepper motor 132 and a support device
134,132 groups of one end and the stepper motor of support device 134 connects, and the other end connects with 113 groups of Edge position control ring, motor 132 and control
Circuit 140 processed connects, and receives the output control signal of control circuit 140, and motor 132 controls support device according to the control signal
134 raise or reduce the height of Edge position control ring 113.Control circuit 140 includes a controller (such as PLC controller), is received brilliant
The menu information of silicon etching machine selection when circle etching.Specifically, as shown in table 2, if the received menu information of PLC controller is
A1, then the amounts of thickness variation that Edge position control ring caused by every wafer is lost in silicon etching machine engraving is A1/X1, then in order to compensate for edge control
The amounts of thickness variation A1/X1 of ring processed, it is s*A1/X1 that stepper motor, which needs the step number of stepping, wherein s is the every movement of support device 134
1mm, the step number of 132 stepping of stepper motor, the control signal of such PLC controller output are that stepper motor needs the step number of stepping to believe
Number, stepper motor 132 receives the step number signal simultaneously stepping step number, so controls Edge position control ring 113 and raises or reduce, with control
Step height between Edge position control ring 113 and sucker 111 processed is target step height, and compensates and draw in wafer etching process
The thinning amount of the Edge position control ring 113 risen.More preferably, the step reached between control Edge position control ring 113 and sucker 111 is high
It spends constant.
Table 2
In an embodiment of the present invention, the frequency that stepper motor 132 works, such as every etching 10 can be set according to actual product
Wafer stepper motor 132 works once, with compensate in wafer etching process caused Edge position control ring 113 it is thinning
Amount.
In an embodiment of the present invention, by the way that a lifting device and a control circuit are arranged in the cavity of silicon etching machine,
To compensate Edge position control ring amount thinning in etching process, crystal round fringes process window is improved, improves wafer yield.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (13)
1. a kind of silicon etching machine characterized by comprising
Cavity；
Sucker and Edge position control ring, the sucker and the Edge position control ring are located in the cavity, and the sucker is for carrying
Wafer, the Edge position control ring are circumferentially positioned at the periphery of the sucker, and in the side for placing the wafer, the edge control
There is a step between ring processed and the sucker；
Lifting device, the lifting device are located in the cavity, and connect with the Edge position control ring group, for raising or reducing
The Edge position control ring；And
Control circuit, the control circuit connects the menu selection unit of the lifting device and silicon etching machine, for receiving silicon
The menu information of etching machine, and based on the received the one control signal of menu information output of silicon etching machine to the lifting device,
So that the lifting device controls the step between the Edge position control ring and the sucker according to the control signal
Highly.
2. silicon etching machine according to claim 1, which is characterized in that the lifting device includes a stepper motor and one
Support arrangement, one end of the support device connect with the stepper motor group, the other end of the support device and the edge control
Ring group processed connects.
3. silicon etching machine according to claim 2, which is characterized in that the support device includes multiple thimbles, described more
A thimble is located at the side opposite with wafer of the Edge position control ring.
4. silicon etching machine according to claim 3, which is characterized in that the multiple thimble is located at the Edge position control ring
Lower section.
5. silicon etching machine according to claim 1, which is characterized in that the control circuit includes a controller, is received brilliant
The menu information of silicon etching machine selection when circle etching, output one and highly relevant control signal are described to the lifting device
Lifting device controls the height of the step between the Edge position control ring and the sucker according to described and highly relevant control signal
Degree.
6. silicon etching machine according to claim 5, which is characterized in that the lifting device is according to described and highly relevant
Control signal controls the height that the Edge position control ring is raised.
7. silicon etching machine according to claim 5, which is characterized in that the lifting device includes a stepper motor, described
The described and highly relevant control signal of control circuit output is the step number of the stepper motor steps.
8. silicon etching machine according to claim 5, which is characterized in that the controller is a PLC controller.
9. a kind of operating method of silicon etching machine as described in claim 1 characterized by comprising
S1: designing so as to have different step heights in the cavity of silicon etching machine between Edge position control ring and sucker, and not
The potential test under vacuum radio frequency is carried out to edge control ring under same step height, according to the potential of the Edge position control ring measured
Obtain the target step height between Edge position control ring and sucker；
S2: the thickness change that Edge position control ring etches Edge position control ring caused by every wafer under each menu of silicon etching machine is calculated
Amount；And
S3: one step height control device of design, the step height control device are each in silicon etching machine according to Edge position control ring
The step between the amounts of thickness variation control Edge position control ring of Edge position control ring caused by every wafer and sucker is etched under menu
Height is the target step height.
10. the operating method of silicon etching machine according to claim 9, which is characterized in that step S2 further includes step S21,
The amounts of thickness variation when Edge position control ring accumulates n wafer of etching under each menu of silicon etching machine is calculated, and then is calculated
The amounts of thickness variation of Edge position control ring caused by every wafer is etched under each menu of silicon etching machine to Edge position control ring, wherein n
≥1。
11. the operating method of silicon etching machine according to claim 9, which is characterized in that the step height control device
Including the lifting device and the control circuit.
12. the operating method of silicon etching machine according to claim 11, which is characterized in that the lifting device includes a step
Into motor and a support device, one end of the support device connects with the stepper motor group, the other end of the support device
It is connect with the Edge position control ring group, the motor is connect with the control circuit, receives the control letter of the control circuit output
Number, and the height that the Edge position control ring was raised or reduced to the support device is controlled according to the control signal.
13. the operating method of silicon etching machine according to claim 12, which is characterized in that the control signal is the step
The step number signal of stepping is needed into motor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810840487.2A CN109065479B (en) | 2018-07-27 | 2018-07-27 | Silicon etching machine and operation method thereof |
| CN202010206368.9A CN111312633A (en) | 2018-07-27 | 2018-07-27 | Silicon etching machine and operation method thereof |
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| CN201810840487.2A CN109065479B (en) | 2018-07-27 | 2018-07-27 | Silicon etching machine and operation method thereof |
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| CN109065479B (en) | 2020-06-16 |
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