CN102023486B - Method for measuring key size swing curve of photo-etching technique - Google Patents
Method for measuring key size swing curve of photo-etching technique Download PDFInfo
- Publication number
- CN102023486B CN102023486B CN2009101954016A CN200910195401A CN102023486B CN 102023486 B CN102023486 B CN 102023486B CN 2009101954016 A CN2009101954016 A CN 2009101954016A CN 200910195401 A CN200910195401 A CN 200910195401A CN 102023486 B CN102023486 B CN 102023486B
- Authority
- CN
- China
- Prior art keywords
- wafer
- photoresist
- critical size
- rotating speed
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a method for measuring key size swing curve of photo-etching technique. The method comprises the steps of measuring the key sizes corresponding to different thicknesses of a photo-resist film and acquiring the key size swing curve according to the measured key size. By using the method, the key size swing curve of photo-etching technique can be acquired by measuring with a wafer, therefore reducing the usage of photo-resist agent and wafer, shortening the processes and measuring time, and saving the cost.
Description
Technical field
The present invention relates to field of semiconductor manufacture, be specifically related to the method for critical size rocking curve in a kind of measuring light carving technology.
Background technology
Photoetching process is the technology of the specific part of crystal column surface film being removed through a series of production stages.After this, crystal column surface can stay the film that has the micrographics structure.
In the manufacture process of wafer, the various physical units of transistor, diode, electric capacity, resistance and metal level etc. constitute in crystal column surface or top layer.These parts are on a mask layer, to generate at every turn, and combine film former and remove specific part through photo-etching technological process, finally the part of keeping characteristics figure on wafer.The target of photoetching process is the requirement according to circuit design, generate in the tram of crystal column surface size accurately and with the correct related feature pattern of other parts.
Photoetching is the processing step that all semiconductors are made most critical in the basic technology.Photoetching has determined the minimum dimension that all processing steps can form in the device fabrication, i.e. critical size, the for example grid width in metal-oxide semiconductor (MOS) (MOS) device.
General photoetching process to experience at crystal column surface be coated with primer, spin coating photoresist, soft baking, aligning, exposure, back baking, develop, operations such as hard baking, etching, detection.
Wherein during the spin coating photoresist, at first will be at the center of wafer spraying photoresist, then with certain rotating speed rotation wafer, thereby set up thin, evenly and do not have a photoresist film of defective at crystal column surface.Exposure be through exposure lamp or other radiation source with figure transfer to photoresist film.The thickness of photoresist is different, and the reflectivity of photoresist is also just different during exposure, thereby has influence on photoetching resolution, finally influences the critical size that semiconductor device fabrication process can realize.Relation curve between critical size and the photoresist thickness is called the critical size rocking curve.Fig. 1 is the critical size rocking curve figure that the various optical parametric emulation that utilize photoresist supplier to provide obtain.With reference to Fig. 1, enough little in order to make photoresist thickness to the influence of critical size, common minimal point or the maximal point (as justifying the point that A is drawn among Fig. 1) of in technological process, selecting curve shown in Figure 1.When selecting at this, even the thickness of photoresist has slight change in the photoetching process, the change of critical size is also not too large, thereby improves the homogeneity of device electrology characteristic.
Because the environment the when environment of semiconductor manufacturing factory merchant measuring light mathematic(al) parameter is measured various optical parametric with supplier might be different, therefore in the photoetching process of reality, the critical size rocking curve can depart from simulation curve shown in Figure 1 sometimes.Therefore, need often the critical size rocking curve of actual process institute reference to be made correction, to increase the degree of accuracy of technology.
In the prior art, adopt 5 photoresists usually, measure the pairing critical size of different-thickness photoresist to 10 wafer spin coating different-thickness, whether consistent with the simulation result of checking critical size rocking curve with current actual process results.When the spin coating photoresist; Usually the photoresist after the spin coating primer is drawn onto on the sucker, photoresist is sprayed onto the center of wafer, then at first with predefined high rotating speed (for example per minute 2000-4000 changes) rotation wafer 0.5-3 second; And then (for example with a less rotating speed; Per minute 800-2500 changes) rotating suction disc 10-30 second, thus form the uniform photoresist film of thickness, as shown in Figure 2.Through changing rotating speed, can obtain the photoresist film of different-thickness.Measure the pairing critical size of these different-thickness then, for example use sweep electron microscope to measure (CD SEM, Scanning Electron Microscope), and, obtain the critical size rocking curve according to the measurement result curve plotting, as shown in Figure 3.
But the method for this measurement critical size rocking curve needs a plurality of wafers and on each wafer, forms the photoresist of different-thickness, has both wasted photoresist, has increased the time of technology and measurement again, thereby has made cost increase greatly.
Summary of the invention
The present invention provides the method for critical size rocking curve in a kind of measuring light carving technology, reduces the use of photoresist and wafer, shortens technology and Measuring Time, reduces cost.This method comprises: the photoresist film that on wafer, forms gradient thickness; Measure the pairing critical size of different-thickness of photoresist film; Critical size according to measuring obtains the critical size rocking curve.
Preferably, said photoresist film in formation gradient thickness on the wafer is: through the rotating speed of adjustment wafer and rotational time forms gradient thickness on wafer photoresist film.
Preferably, comprise through the rotating speed of adjustment wafer and rotational time forms gradient thickness on wafer photoresist film: at the center of wafer spraying photoresist; Rotate said wafer with predefined high rotating speed; The rotating speed of said wafer is reduced to the predefined slow-speed of revolution; The rotating speed that increases with stepping rotates said wafer; Be reduced to the said predefined slow-speed of revolution with rotating speed, be reduced to zero then said wafer.
Wherein, said predefined high rotating speed can change for per minute 1000 to 3000.The time of rotating said wafer with predefined high rotating speed is preferably 0.5 to 5 second.The said predefined slow-speed of revolution is that per minute 100 to 500 changes.The step-length that stepping increases rotating speed is 30 to 300 commentaries on classics.The time of rotating said wafer with each rotating speed in the rotating speed of stepping increase is 1 to 10 second.The rotating speed that stepping increases is increased to per minute 1000 to 2000 to be changeed.
The maximum ga(u)ge of the photoresist film of the gradient thickness that obtains with said method and parameter and the difference of minimum thickness are between 1 to 200 nanometer.
Photoresist film forming gradient thickness on the wafer can also be: the photoresist film that forms gradient thickness through the position that is adjusted at spraying photoresist on the wafer.
Preferably, the said photoresist film that forms gradient thickness through the position that is adjusted on the wafer spraying photoresist comprises: departing from the position spraying photoresist of crystal circle center; Rotate said wafer with predefined high rotating speed; The rotating speed of said wafer is reduced to predefined medium speed, is reduced to zero then.
Wherein, said position of departing from crystal circle center is apart from the position of 1 to 7 millimeter of crystal circle center, is preferably 5 millimeters.
Compared with prior art, technical scheme provided by the present invention is measured the pairing critical size of different-thickness of photoresist film then at first through the photoresist film of spin coating gradient thickness on wafer, draws the critical size rocking curve.Thereby only use a wafer to measure the critical size rocking curve of photoetching process, reduced the use of photoresist and wafer, shortened technology and Measuring Time, provide cost savings.
Description of drawings
Fig. 1 is the critical size rocking curve figure that the various optical parametric emulation that utilize photoresist supplier to provide obtain;
Fig. 2 is the rotating speed-time chart of spin coating photoresist in the prior art;
The critical size rocking curve figure of Fig. 3 for utilizing a plurality of wafers to obtain in the prior art;
Fig. 4 is the rotating speed-time chart of spin coating photoresist in the first embodiment of the invention;
The photoresist progressive thickness curve map of Fig. 5 on wafer, forming in the first embodiment of the invention;
Fig. 6 is the critical size rocking curve figure that utilizes the method for first embodiment of the invention to measure;
Fig. 7 is the synoptic diagram of spraying photoresist in the second embodiment of the invention;
The photoresist progressive thickness curve map of Fig. 8 on wafer, forming in the second embodiment of the invention;
Fig. 9 is the critical size rocking curve figure that utilizes the method for second embodiment of the invention to measure.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is elaborated.
The method of critical size rocking curve in the measuring light carving technology provided by the invention; At first on wafer, form the photoresist film of gradient thickness; Measure the pairing critical size of different-thickness of photoresist film then, and, obtain the critical size rocking curve according to the critical size of measuring.
First embodiment:
In the present embodiment, be through the rotating speed of adjustment wafer and rotational time forms gradient thickness on wafer photoresist film at the photoresist film that forms gradient thickness on the wafer.
Specifically comprise: at first at the center of wafer spraying photoresist; Then with predefined high rotating speed rotation wafer; Rotating speed with wafer is reduced to the predefined slow-speed of revolution then, and rotates wafer with the rotating speed that stepping increases; Rotating speed with wafer is reduced to the predefined slow-speed of revolution up to zero at last, thereby forms the photoresist film of gradient thickness.
Below describe in detail and pass through to adjust the rotating speed of wafer and the preferred embodiment that rotational time forms the photoresist film of gradient thickness.
At first wafer is fixed with vacuum cup.Sucker is a hollow metal dish flat, that link to each other with vacuum pipeline.Chuck surface has many apertures, and in the time of above wafer is placed on sucker, the suction of vacuum makes wafer closely contact with sucker.Then, spray predefined photoresist amount at the center of wafer.The torque that applies on the sucker makes the rotating speed of wafer rise to predefined high rotating speed rapidly; With this rotating speed rotation wafer a period of time; The rotating speed rotation wafer 0.5-5 second of for example changeing with per minute 1000-3000, as shown in Figure 4, be to rotate 2 seconds in the present embodiment with the rotating speed that per minute 2500 changes.Thereby the photoresist of spraying is spin-coated on crystal column surface, but this moment, photoresist thickness did not reach desired level.
Then, the rotating speed of wafer is reduced to the predefined slow-speed of revolution, the rotating speed rotation wafer 1-10 second of for example changeing with per minute 100-500, in the present embodiment with 100 rev/mins rotating speed rotation 1 second.Next, stepping increases the rotating speed of wafer, and for example the step-length of stepping increase rotating speed is that 30-300 changes, and promptly increase 30-300 changes at every turn, and the time of rotating wafer with each rotating speed can be 1-10 second.Step-length with 200 commentaries on classics in the present embodiment increases rotating speed, and the time of each rotating speed rotation wafer is 2 seconds.
The increase of rotating speed reaches per minute 1000-2000 changes (in the present embodiment being 1600 rev/mins) afterwards, and the rotating speed of wafer is reduced to the predefined slow-speed of revolution, is reduced to zero then, thereby forms the photoresist film of gradient thickness.
The photoresist progressive thickness curve map of Fig. 5 on wafer, forming in the first embodiment of the invention.The thickness of the photoresist film that as can beappreciated from fig. 5, forms with parameter in the above described manner reduces from the centre to the edge gradually.Depending on stepping increases the wafer rotational speed and the time in rotating speed stage, and the maximum ga(u)ge of the photoresist film of the gradient thickness that forms in this preferred embodiment and the difference of minimum thickness are between 1 to 200 nanometer.Certainly, form the photoresist film of other thickness difference if desired, perhaps form the bigger photoresist film of variation in thickness scope, then can change above parameter.In addition, wafer rotating speed and time when forming photoresist film, also can form the photoresist film of other pattern through further adjustment.The present invention is not limited to form the thick middle edge shown in Figure 5 photoresist film of attenuation gradually.
Fig. 6 is the critical size rocking curve figure that utilizes the method for first embodiment of the invention to measure.As shown in Figure 6, the critical size rocking curve figure that utilizes a plurality of wafers to obtain shown in the critical size rocking curve figure that the method for use first embodiment of the invention measures and Fig. 3 coincide.
Second embodiment:
In the present embodiment, be the photoresist film that forms gradient thickness through the position that is adjusted at spraying photoresist on the wafer at the photoresist film that forms gradient thickness on the wafer.
Specifically comprise: departing from the position spraying photoresist of crystal circle center; With predefined high rotating speed rotation wafer; The rotating speed of wafer is reduced to predefined medium speed, is reduced to zero then, thereby form the photoresist film of gradient thickness.
Below describe the preferred embodiment that forms the photoresist film of gradient thickness through the position that is adjusted at spraying photoresist on the wafer in detail.
Fig. 7 is the synoptic diagram of spraying photoresist in the second embodiment of the invention.As shown in Figure 7, departing from the position spraying photoresist of crystal circle center, for example apart from the position of crystal circle center 1 to 7mm.In the present embodiment, the position of spraying photoresist and the distance of crystal circle center are 5mm.
Rotation mode with prior art rotates wafer then; For example at first rotate wafer 0.5-3 second with predefined high rotating speed (for example per minute 2000-4000 changes); And then (for example with predefined medium speed; Per minute 800-2500 changes) rotate wafer 10-30 second, at last speed drop is low to moderate zero, thereby forms the photoresist film of gradient thickness.
Before the spraying photoresist, can also at first carry out virtual exposure, so that wafer is carried out orientation.
The photoresist progressive thickness curve map of Fig. 8 on wafer, forming in the second embodiment of the invention.As shown in Figure 8, the photoresist film that forms in the present embodiment is maximum at the center thickness of spraying photoresist, and reduces gradually from the center thickness of spraying photoresist.
Fig. 9 is the critical size rocking curve figure that utilizes the method for second embodiment of the invention to measure.As shown in Figure 9, the critical size rocking curve figure that utilizes a plurality of wafers to obtain shown in the critical size rocking curve figure that the method for use second embodiment of the invention measures and Fig. 3 coincide.
Can find out by the above; Technical scheme provided by the present invention; The photoresist film of spin coating gradient thickness on wafer is at first measured the pairing critical size of different-thickness of photoresist film then, draws the critical size rocking curve according to the critical size of measuring.Thereby only use a wafer to measure the critical size rocking curve of photoetching process, reduced the use of photoresist and wafer, shortened technology and Measuring Time, provide cost savings.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. the method for the critical size rocking curve of a measuring light carving technology comprises:
On wafer, form the photoresist film of gradient thickness;
Measure the pairing critical size of different-thickness of photoresist film;
Critical size according to measuring obtains the critical size rocking curve;
Said photoresist film in formation gradient thickness on the wafer is: the photoresist film that forms gradient thickness through the position that is adjusted at spraying photoresist on the wafer;
The said photoresist film that forms gradient thickness through the position that is adjusted on the wafer spraying photoresist comprises:
Departing from the position spraying photoresist of crystal circle center;
Rotate said wafer with predefined high rotating speed, said high rotating speed is that per minute 2000～4000 changes;
The rotating speed of said wafer is reduced to predefined medium speed, and said medium speed is that per minute 800～2500 changes, and is reduced to zero then;
Said position of departing from crystal circle center is the position apart from 1 to 7 millimeter of crystal circle center.
2. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 1 is characterized in that, said position of departing from crystal circle center is the position apart from 5 millimeters of crystal circle center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101954016A CN102023486B (en) | 2009-09-09 | 2009-09-09 | Method for measuring key size swing curve of photo-etching technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101954016A CN102023486B (en) | 2009-09-09 | 2009-09-09 | Method for measuring key size swing curve of photo-etching technique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102023486A CN102023486A (en) | 2011-04-20 |
| CN102023486B true CN102023486B (en) | 2012-05-30 |
Family
ID=43864950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101954016A Expired - Fee Related CN102023486B (en) | 2009-09-09 | 2009-09-09 | Method for measuring key size swing curve of photo-etching technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102023486B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738058B (en) * | 2011-04-01 | 2014-08-27 | 无锡华润上华半导体有限公司 | Forming method for active area and forming method for STI trench |
| CN103135364A (en) * | 2013-02-21 | 2013-06-05 | 合肥京东方光电科技有限公司 | Photolithographic process parameter determination method and device |
| CN106323181B (en) * | 2016-11-02 | 2019-02-22 | 苏州同冠微电子有限公司 | The determination method of photoresist thickness |
| CN114077166B (en) * | 2021-11-25 | 2024-01-05 | 上海华力集成电路制造有限公司 | Method for obtaining critical dimension rocking curve of photoetching technology |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985363A (en) * | 1997-03-10 | 1999-11-16 | Vanguard International Semiconductor | Method of providing uniform photoresist coatings for tight control of image dimensions |
| US6733936B1 (en) * | 2002-09-19 | 2004-05-11 | Integrated Device Technology, Inc. | Method for generating a swing curve and photoresist feature formed using swing curve |
| CN1552091A (en) * | 2001-07-03 | 2004-12-01 | ���������ƴ���ʽ���� | Coating device and coating method |
| JP2007115936A (en) * | 2005-10-21 | 2007-05-10 | Tokyo Electron Ltd | Resist coating method and resist coating apparatus |
| CN101452215A (en) * | 2007-11-30 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Control method for key dimension |
-
2009
- 2009-09-09 CN CN2009101954016A patent/CN102023486B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985363A (en) * | 1997-03-10 | 1999-11-16 | Vanguard International Semiconductor | Method of providing uniform photoresist coatings for tight control of image dimensions |
| CN1552091A (en) * | 2001-07-03 | 2004-12-01 | ���������ƴ���ʽ���� | Coating device and coating method |
| US6733936B1 (en) * | 2002-09-19 | 2004-05-11 | Integrated Device Technology, Inc. | Method for generating a swing curve and photoresist feature formed using swing curve |
| JP2007115936A (en) * | 2005-10-21 | 2007-05-10 | Tokyo Electron Ltd | Resist coating method and resist coating apparatus |
| CN101452215A (en) * | 2007-11-30 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Control method for key dimension |
Non-Patent Citations (1)
| Title |
|---|
| 孔祥东等.电子束液态曝光技术的甩胶原理研究.《微细加工技术》.2005,(第4期), * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102023486A (en) | 2011-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101592869B (en) | Exposure equipment focal distance monitoring method | |
| CN102023486B (en) | Method for measuring key size swing curve of photo-etching technique | |
| TW201319760A (en) | Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods | |
| US8785112B2 (en) | Reticle defect correction by second exposure | |
| US20170329241A1 (en) | Alignment method and alignment system thereof | |
| JP2009200388A (en) | Method of processing substrate, program, computer storage medium and substrate processing system | |
| CN105159031A (en) | Method for fabricating relation curve of thicknesses and critical sizes of photoresists | |
| JP2014229802A (en) | Lithography apparatus, lithography method, lithography system, and method of manufacturing article | |
| CN108873612A (en) | Overlapping correction method and the control system for using this method | |
| CN102707568B (en) | Photo-etching method of bottom surface of multi-step apparatus structure | |
| CN111474822B (en) | Method for quickly correcting uniformity of optical substrate based on three-dimensional photoresist mask | |
| CN102376541A (en) | Method for adjusting uniformity of critical dimensions in integrated circuit manufacture | |
| CN101344721A (en) | Photo-etching method | |
| US20090042145A1 (en) | Method for Detecting Light Intensity Distribution for Gradient Filter and Method for Improving Line Width Consistency | |
| CN101598645A (en) | Method for manufacturing standard sample for scanning electron microscope magnification calibration | |
| CN102023477B (en) | Photoetching method | |
| CN117666294A (en) | Photoetching process optimization method and system for wafer | |
| CN105223773B (en) | Method for correcting light transmission intensity of photomask pattern | |
| US6238936B1 (en) | Method of using critical dimension mapping to qualify a new integrated circuit fabrication etch process | |
| CN114077166B (en) | Method for obtaining critical dimension rocking curve of photoetching technology | |
| KR100366615B1 (en) | Spinner Apparatus With Chemical Supply Nozzle, Method Of Forming Pattern And Method Of Etching Using The Same | |
| US20200286851A1 (en) | Method and device for manufacturing stacked substrate | |
| CN101592870B (en) | Monitoring method of lithography equipment focus | |
| JP4531659B2 (en) | Method and apparatus for flattening coating film | |
| CN109309028A (en) | Substrate processing device and Method of processing a substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20190909 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |