CN109038209A - Wafer-level packaging method, laser die group, CCD camera assembly and electronic device - Google Patents
Wafer-level packaging method, laser die group, CCD camera assembly and electronic device Download PDFInfo
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- CN109038209A CN109038209A CN201810996282.3A CN201810996282A CN109038209A CN 109038209 A CN109038209 A CN 109038209A CN 201810996282 A CN201810996282 A CN 201810996282A CN 109038209 A CN109038209 A CN 109038209A
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- Prior art keywords
- wafer
- die group
- laser die
- level packaging
- laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0236—Fixing laser chips on mounts using an adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Studio Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
This application discloses a kind of wafer-level packaging method, laser die group, CCD camera assembly and electronic devices, wafer-level packaging method for laser die group includes the following steps: S1, provides wafer, package support and lens jacket, wafer includes the multiple chip of laser of substrate and array setting on substrate, and each chip of laser upside-down mounting is on substrate；S2, wafer, package support and lens jacket are sequentially overlapped and are adhesively fixed by glue, form wafer-level packaging part；S3, wafer-level packaging part is cut to obtain single laser die group.According to the wafer-level packaging method for laser die group of the embodiment of the present application, on substrate by the chip of laser upside-down mounting of wafer, by the way that wafer, package support and lens jacket are integrally packaged, laser die group one by one is cut into after encapsulation again, it is possible thereby to improve the packaging efficiency of laser die group.
Description
Technical field
This application involves electronic device and its manufacturing fields, more particularly, to a kind of wafer-level packaging method, laser die
Group, CCD camera assembly and electronic device.
Background technique
In the related technology, the packaged type of Vcsel laser die group is that monomer one by one is needed to encapsulate, and efficiency compares
It is low.
Summary of the invention
The application aims to solve at least one of the technical problems existing in the prior art.For this purpose, the purpose of the application
It is to propose that laser die can be improved in a kind of wafer-level packaging method for laser die group, the wafer-level packaging method
The packaging efficiency of group.
The application also proposed a kind of laser die group being made using above-mentioned wafer-level packaging method.
The application also proposed a kind of CCD camera assembly with above-mentioned laser die group.
The application also proposed a kind of electronic device with above-mentioned CCD camera assembly.
According to the wafer-level packaging method for laser die group of the application first aspect embodiment, including walk as follows
It is rapid: S1, to provide wafer, package support and lens jacket, the wafer includes substrate and array setting over the substrate multiple
Chip of laser, each chip of laser upside-down mounting is over the substrate；S2, by the wafer, the package support and institute
It states lens jacket to be sequentially overlapped and be adhesively fixed by glue, forms wafer-level packaging part；S3, the wafer-level packaging part is carried out
Cutting is to obtain the single laser die group.
According to the wafer-level packaging method for laser die group of the embodiment of the present application, the chip of laser of wafer is fallen
Dress on substrate, by the way that wafer, package support and lens jacket to be integrally packaged, is cut into swashing one by one again after encapsulation
Light device mould group, it is possible thereby to improve the packaging efficiency of laser die group.
According to some embodiments of the present application, the step S2 includes following sub-step:
S21, the coating glue between the wafer and the package support；
S22, curing process is carried out to the glue between the wafer and the package support；
S23, the coating glue between the package support and the lens jacket；
S24, curing process is carried out to the glue between package support and the lens jacket.
According to some embodiments of the present application, between the wafer and the package support and the package support and institute
It states and is positioned between lens jacket by coordinate system.
According to some embodiments of the present application, in the step S3, the cutting line on the wafer-level packaging part is logical
Cross the calculated dummy line of computer equipment.
According to some embodiments of the present application, the substrate is ceramic substrate.
According to some embodiments of the present application, the laser die group is Vcsel laser die group.
According to some embodiments of the present application, the package support includes the sub- package support of multiple array settings, adjacent
It is connected between the sub- package support.
According to some embodiments of the present application, the lens jacket includes the lens and interconnecting piece of multiple array settings, adjacent
It is connected between two lens by the interconnecting piece, the interconnecting piece is in flat Transparent Parts.
According to some embodiments of the present application, the lens jacket is made of the lenticule that multiple arrays are arranged.
According to some embodiments of the present application, the glue is UV glue.
According to the laser die group of the application second aspect embodiment, the laser die group is by according to the application above-mentioned
The wafer-level packaging method of one side embodiment is made.
According to the laser die group of the embodiment of the present application, it is made by using above-mentioned wafer-level packaging method, it can
To improve the production efficiency of laser die group.
According to the CCD camera assembly of the application third aspect embodiment, comprising: camera, the camera include circuit
Plate, imaging sensor and camera lens, described image sensor are located on the circuit board, and the camera lens is located at described image sensor
Far from the circuit board side；According to the laser die group of the above-mentioned second aspect embodiment of the application, the laser die
Group is located on the circuit board；Receiver, the receiver for receive by the laser die group emit to target object it
By the optical signal reflected by the laser die group；Microprocessor, according to the received optical signal of the receiver, micro- place
Reason device calculates light that the laser die group is emitted from being emitted to received time difference or phase difference, and according to the time difference or
Phasometer calculates the range information of the target object.
Be conducive to camera group by the way that above-mentioned laser die group is arranged according to the CCD camera assembly of the embodiment of the present application
Part realizes 3D imaging, and since laser die group uses above-mentioned wafer-level packaging method to be made, camera shooting can be improved
The production efficiency of head assembly.
According to the electronic device of the application fourth aspect embodiment, comprising: according to the above-mentioned third aspect embodiment of the application
CCD camera assembly.
3D imaging is advantageously implemented by the above-mentioned CCD camera assembly of setting according to the electronic device of the embodiment of the present application,
And since laser die group is made using above-mentioned wafer-level packaging method, the production effect of electronic device can be improved
Rate.
The additional aspect and advantage of the application will be set forth in part in the description, and will partially become from the following description
It obtains obviously, or recognized by the practice of the application.
Detailed description of the invention
The above-mentioned and/or additional aspect and advantage of the application will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is the schematic diagram according to the wafer of the wafer-level packaging method for laser die group of the embodiment of the present application；
Fig. 2 is the signal according to the package support of the wafer-level packaging method for laser die group of the embodiment of the present application
Figure；
Fig. 3 is the signal according to the lens jacket of the wafer-level packaging method for laser die group of the embodiment of the present application
Figure；
Fig. 4 is wafer, the package support according to the wafer-level packaging method for laser die group of the embodiment of the present application
And the connection schematic diagram of lens jacket；
Fig. 5 is the wafer-level packaging part according to the wafer-level packaging method for laser die group of the embodiment of the present application
Cutting schematic diagram；
Fig. 6 is the schematic diagram according to the laser die group of the embodiment of the present application；
Fig. 7 is the schematic diagram according to the CCD camera assembly of the embodiment of the present application；
Fig. 8 is the schematic diagram according to the electronic device of the embodiment of the present application.
Appended drawing reference:
Electronic device 100；
Shell 1；
Camera 3；Circuit board 31；Imaging sensor 32；Camera lens 33；Lens bracket 34；
Laser die group 4；Sub- substrate 41；Chip of laser 42；Sub- package support 43；Lens 44；Connect pad 45；
Wafer-level packaging part 200；
Wafer 50；Substrate 501；
Package support 60；
Lens jacket 70；Interconnecting piece 701；
Cutting line S.
Specific embodiment
Embodiments herein is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and is only used for explaining the application, and should not be understood as the limitation to the application.
Below with reference to Fig. 1-Fig. 6 description according to the wafer-level packaging method for laser die group of the embodiment of the present application.
Wherein, laser die group 4 can be Vcsel (Vertical Cavity Surface Emitting Laser, vertical cavity surface hair
Penetrate laser) laser die group.
As shown in figs 1 to 6, according to the wafer-level packaging side for laser die group of the application first aspect embodiment
Method includes the following steps:
S1, wafer 50, package support 60 and lens jacket 70 are provided, which includes that substrate 501 and array setting are serving as a contrast
Multiple chip of laser 42 on bottom 501 are spaced from each other between adjoining laser chip 42, each 42 upside-down mounting of chip of laser
On substrate 501, substrate 501 is laid with conductive structure corresponding with chip of laser 42, and substrate 501 can be ceramic substrate,
Package support 60 can be the higher plastic part of intensity；
S2, wafer 50, package support 60 and lens jacket 70 are sequentially overlapped and are adhesively fixed by glue, form wafer scale
Packaging part 200 applies between the position of coating glue and package support 60 and lens jacket 70 between wafer 50 and package support 60
The position for covering glue is the position of neighbouring cutting line S；
S3, above-mentioned wafer-level packaging part 200 is cut to obtain single laser die group 4, substrate 501 is cut into
Multiple sub- substrates 41, each laser die group 4 have a corresponding chip of laser 42.
Wherein, in above-mentioned S2 step, wafer 50, package support 60 and lens jacket 70 are in the direction from bottom to top successively
Superposition is adhesively fixed between two neighboring in wafer 50, package support 60 and lens jacket 70 by glue.Wafer 50, encapsulation
The bonding sequence of 70 three of bracket 60 and lens jacket may include following situation: (1) can first adhesive wafer 50 and package support
60, then it is bonded package support 60 and lens jacket 70；(2) package support 60 and lens jacket 70, then adhesive wafer 50 can be first bonded
With package support 60.
It should be noted that the pole P, N of the chip of laser 42 is located at the same interface, traditional laser die is eliminated
Group beats gold thread process, and is conducive to realize wafer-level packaging.For example, in the example of fig. 6, P, N of chip of laser 42 are extremely equal
Positioned at chip of laser 42 towards on the surface of substrate 501 (sub- substrate 41), the pole P, N of chip of laser 42 by setting respectively
Connection pad 45 on it is electrically connected with the conductive structure realization on substrate 501 (sub- substrate 41).
The application is conducive to realize wafer-level packaging, lead to by the way that the chip of laser 42 of wafer 50 to be inverted on substrate 501
The laser die group 4 being cut into again after being packaged wafer 50, package support 60 and 70 entirety of lens jacket one by one is crossed, thus
The packaging efficiency of laser die group 4 can be improved.
According to the wafer-level packaging method for laser die group of the embodiment of the present application, by the chip of laser of wafer 50
42 are inverted on substrate 501, by the way that wafer 50, package support 60 and 70 entirety of lens jacket to be packaged, cut again after encapsulation
It is cut into laser die group 4 one by one, it is possible thereby to improve the packaging efficiency of laser die group 4.
According to some embodiments of the present application, above-mentioned steps S2 may include following sub-step:
S21, the coating glue between wafer 50 and package support 60, can in the upper surface coating glue of wafer 50,
It can be in the lower surface coating glue of package support 60；
S22, curing process is carried out to the glue between wafer 50 and package support 60, such as ultraviolet light can be passed through
Solidification；
S23, the coating glue between package support 60 and lens jacket 70, can be in the upper surface coating adhesive of package support 60
Water, can also be in the lower surface coating glue of lens jacket 70；
S24, curing process is carried out to the glue between package support 60 and lens jacket 70, such as ultraviolet lighting can be passed through
Penetrate solidification.
Wherein, above-mentioned glue can be UV glue.
According to some embodiments of the present application, between wafer 50 and package support 60 and package support 60 and lens jacket 70
Between pass through coordinate system position.For example, above-mentioned coordinate system may include the coordinate of each chip of laser 42 on wafer 50, envelope
The coordinate for filling each lens 44 on the coordinate and lens jacket 70 of every sub- package support 43 on bracket 60, to realize wafer 50
Connection is accurately positioned between package support 60 and between package support 60 and lens jacket 70.Further, above-mentioned coordinate system
It can also include the mark point being located on wafer 50, package support 60 and lens jacket 70, which can be used as anchor point,
It realizes between wafer 50 and package support 60 and is accurately positioned between package support 60 and lens jacket 70 and connected.
According to some embodiments of the present application, in above-mentioned steps S3, the cutting line S on wafer-level packaging part 200 is logical
Cross the calculated dummy line of computer equipment.That is, being not provided with reality on wafer 50, package support 60 and lens jacket 70
Visible cutting line S, cutting line S are by corresponding computer equipment according on wafer 50, package support 60 and lens jacket 70
Coordinate calculating obtain virtual cutting line, cutting when may be implemented to overall package according to virtual cutting line S after
Wafer-level packaging part 200 is accurately cut.
According to some embodiments of the present application, package support 60 includes the sub- package support 43 of multiple arrays setting, adjacent
It is connected between sub- package support 43.Wherein, corresponding chip of laser 42 on the corresponding wafer 50 of every sub- package support 43.It is cutting
When cutting, package support 60 is correspondingly cut into multiple sub- package supports 43.
According to some embodiments of the present application, lens jacket 70 includes the lens 44 and interconnecting piece 701 of multiple arrays setting, phase
It is connected between adjacent two lens 44 by interconnecting piece 701, interconnecting piece 701 is in flat Transparent Parts.As a result, by lens jacket
70 with package support 60 when connecting, can will be Nian Jie by glue between the interconnecting piece 701 of lens jacket 70 and package support 60, by
It is that the connection area between lens jacket 70 and package support 60 can be improved in flat Transparent Parts in interconnecting piece 701, improves
The reliability of connection.
According to some embodiments of the present application, lens jacket 70 can be made of the lenticule that multiple arrays are arranged.Make as a result,
Lens jacket 70 structure it is simple, it is each due to lens jacket 70 and when lens jacket 70 and package support 60 are attached
Part is lenticule, and the quality of final laser die group 4 will not be influenced deviating, reduces production difficulty.
Referring to Fig. 6, according to the laser die group 4 of the application second aspect embodiment, the laser die group 4 is by according to this
Apply for that the wafer-level packaging method of above-mentioned first aspect embodiment is made.
According to the laser die group 4 of the embodiment of the present application, it is made by using above-mentioned wafer-level packaging method, it can
To improve the production efficiency of laser die group 4.
Referring to Fig. 7, according to the CCD camera assembly of the application third aspect embodiment, comprising: camera 3, laser die group
4, receiver and microprocessor.
Specifically, camera 3 includes circuit board 31, imaging sensor 32, lens bracket 34 and camera lens 33, image sensing
Device 32 is located on circuit board 31, and lens bracket 34 is located at the periphery on circuit board 31 and around imaging sensor 32 and is arranged, camera lens
33 are located at the side of the separate circuit board 31 of imaging sensor 32, and camera lens 33 is located on lens bracket 34.
Laser die group 4 is the laser die group 4 according to the above-mentioned second aspect embodiment of the application, and laser die group 4 is set
On circuit board 31, receiver is for receiving by reflecting after the transmitting to target object of laser die group 4 via laser die group 4
Optical signal.According to the received optical signal of receiver, microprocessor calculates light that laser die group 4 is emitted and connects from being emitted to
The time difference of receipts or phase difference, and according to time difference or the range information of phasometer calculating target object.In conjunction with camera 3
Shooting, the three-D profile of target object is represented different distance in different colors and showed by microprocessor, and then is conducive to reality
Existing 3D imaging.Wherein, target object is the reference object of CCD camera assembly.
Be conducive to camera group by the way that above-mentioned laser die group 4 is arranged according to the CCD camera assembly of the embodiment of the present application
Part realizes 3D imaging, and since laser die group 4 uses above-mentioned wafer-level packaging method to be made, camera shooting can be improved
The production efficiency of head assembly.
According to the electronic device 100 of the application fourth aspect embodiment, comprising: implemented according to the above-mentioned third aspect of the application
The CCD camera assembly of example.
According to the electronic device 100 of the embodiment of the present application, by the way that above-mentioned CCD camera assembly is arranged, be advantageously implemented 3D at
Picture, and since laser die group 4 uses above-mentioned wafer-level packaging method to be made, electronic device 100 can be improved
Production efficiency.
Optionally, referring to Fig. 8, electronic device 100 can be mobile phone, and electronic device 100 includes shell 1, mainboard, above-mentioned takes the photograph
As head assembly, display screen, cover board etc..Wherein, CCD camera assembly includes camera 3, laser die group 4, receiver and micro process
Device.Cover board is connected with shell 1 and limits installation space, and mainboard and display screen are each provided in installation space, and display location in
The side of the neighbouring cover board of mainboard, CCD camera assembly are located in installation space and are located on mainboard.
Illustratively, electronic device 100 can be various types of calculating that are mobile or portable and executing wireless communication
Any one of machine system equipment (only illustratively shows a kind of form) in Fig. 8.Specifically, electronic device 100 can be with
For mobile phone or smart phone (for example, being based on iPhone TM, the phone based on Android TM), portable gaming device
(such as Nintendo DS TM, PlayStation Portable TM, Gameboy Advance TM, iPhone TM), knee
Laptop, PDA, portable Internet appliance, music player and data storage device, other handheld devices and such as
Wrist-watch, In-Ear Headphones, pendant, headphone etc., electronic device 100 can also be other wearable devices (for example, all
As electronic glasses, electronics clothes, electronics bracelet, electronics necklace, electronics are tatooed, the headset equipment of electronic equipment or smartwatch
(HMD))。
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means specific features described in conjunction with this embodiment or example, knot
Structure, material or feature are contained at least one embodiment or example of the application.In the present specification, to above-mentioned term
Schematic representation may not refer to the same embodiment or example.Moreover, specific features, structure, material or the spy of description
Point can be combined in any suitable manner in any one or more of the embodiments or examples.
While there has been shown and described that embodiments herein, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle and objective of the application, this
The range of application is defined by the claims and their equivalents.
Claims (13)
1. a kind of wafer-level packaging method for laser die group, which comprises the steps of:
S1, wafer, package support and lens jacket are provided, the wafer includes substrate and array setting over the substrate multiple
Chip of laser, each chip of laser upside-down mounting is over the substrate；
S2, the wafer, the package support and the lens jacket are sequentially overlapped and are adhesively fixed by glue, form wafer
Grade packaging part；
S3, the wafer-level packaging part is cut to obtain the single laser die group.
2. the wafer-level packaging method according to claim 1 for laser die group, which is characterized in that the step S2
Including following sub-step:
S21, the coating glue between the wafer and the package support；
S22, curing process is carried out to the glue between the wafer and the package support；
S23, the coating glue between the package support and the lens jacket；
S24, curing process is carried out to the glue between the package support and the lens jacket.
3. the wafer-level packaging method according to claim 1 for laser die group, which is characterized in that the wafer with
It is positioned between the package support and by coordinate system between the package support and the lens jacket.
4. the wafer-level packaging method according to claim 1 for laser die group, which is characterized in that in the step
In S3, the cutting line on the wafer-level packaging part is to pass through the calculated dummy line of computer equipment.
5. the wafer-level packaging method according to claim 1 for laser die group, which is characterized in that the substrate is
Ceramic substrate.
6. the wafer-level packaging method according to claim 1 for laser die group, which is characterized in that the laser
Mould group is Vcsel laser die group.
7. the wafer-level packaging method according to claim 1 for laser die group, which is characterized in that the encapsulation branch
Frame includes the sub- package support of multiple array settings, is connected between the adjacent sub- package support.
8. the wafer-level packaging method according to claim 1 for laser die group, which is characterized in that the lens jacket
Including lens and interconnecting piece that multiple arrays are arranged, it is connected between the two neighboring lens by the interconnecting piece, the company
Socket part is in flat Transparent Parts.
9. the wafer-level packaging method according to claim 1 for laser die group, which is characterized in that the lens jacket
It is made of the lenticule that multiple arrays are arranged.
10. the wafer-level packaging method according to claim 1 for laser die group, which is characterized in that the glue
For UV glue.
11. a kind of laser die group, which is characterized in that the laser die group is as described according to claim 1 any one of -10
Wafer-level packaging method be made.
12. a kind of CCD camera assembly characterized by comprising
Camera, the camera include circuit board, imaging sensor and camera lens, and described image sensor is located at the circuit board
On, the camera lens is located at the side far from the circuit board of described image sensor；
Laser die group according to claim 11, the laser die group are located on the circuit board；
Receiver, the receiver are emitted to target object by the laser die group later via the laser for receiving
The optical signal of mould group reflection；
Microprocessor, according to the received optical signal of the receiver, the microprocessor calculates the laser die group and is sent out
The light penetrated from being emitted to received time difference or phase difference, and according to time difference or phasometer calculate the target object away from
From information.
13. a kind of electronic device characterized by comprising CCD camera assembly according to claim 12.
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| CN201810996282.3A CN109038209B (en) | 2018-08-29 | 2018-08-29 | Wafer level packaging method, laser module, camera assembly and electronic device |
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| CN114067472A (en) * | 2021-11-29 | 2022-02-18 | 广东电网有限责任公司 | Substation arrival authorization management system and method |
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