CN109037493B - OLED display substrate, manufacturing method thereof and display device - Google Patents

OLED display substrate, manufacturing method thereof and display device Download PDF

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Publication number
CN109037493B
CN109037493B CN201810841595.1A CN201810841595A CN109037493B CN 109037493 B CN109037493 B CN 109037493B CN 201810841595 A CN201810841595 A CN 201810841595A CN 109037493 B CN109037493 B CN 109037493B
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flat pattern
pattern
layer
flat
light
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CN109037493A (en
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吕志军
张世政
党宁
董立文
宋晓欣
崔钊
刘文渠
张锋
姚琪
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention provides an OLED display substrate, a manufacturing method thereof and a display device, and belongs to the technical field of display. The OLED display substrate includes: the thin film transistor array substrate comprises a first flat pattern and a second flat pattern, wherein the first flat pattern defines a plurality of first areas, the second flat pattern corresponds to the first areas one by one, the second flat pattern is positioned in the corresponding first areas, the section of the second flat pattern in the direction perpendicular to the extending direction of the second flat pattern is in an inverted trapezoid shape, and the height of the upper surface of the second flat pattern is lower than that of the upper surface of the first flat pattern; a light reflecting anode layer on the first and second flat patterns; a pattern of pixel definition layers located within the first region, the pattern of pixel definition layers defining a second region; a light emitting layer located in the second region; a cathode layer on the light emitting layer and the first flat pattern. The invention can improve the luminous efficiency of the OLED display substrate.

Description

OLED display substrate, manufacturing method thereof and display device
Technical Field
The invention relates to the technical field of display, in particular to an OLED display substrate, a manufacturing method thereof and a display device.
Background
The light emitted by the existing top-emitting OLED (organic light-emitting diode) display substrate is partially reflected to an effective light-emitting area by a reflective anode and then emitted out, and the other part of light is decomposed into transverse light and light inside a pixel defining layer, so that the light leakage phenomenon is caused, and the light-emitting efficiency of the OLED display substrate is reduced. The transverse light is transversely transmitted along the surface of the light-reflecting anode and finally converged on the pixel defining layer, and the escaping light is generated outwards along the pixel defining layer to form light leakage; the light inside the pixel defining layer forms a waveguide effect inside the pixel defining layer and is transmitted to the outside of the effective light emitting area along the pixel defining layer to form light leakage.
Disclosure of Invention
The invention aims to provide an OLED display substrate, a manufacturing method thereof and a display device, which can reduce light leakage and improve the luminous efficiency of the OLED display substrate.
To solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, a method for manufacturing an OLED display substrate is provided, including:
forming a first flat pattern and a second flat pattern on the thin film transistor array substrate, wherein the first flat pattern defines a plurality of first areas, the second flat pattern corresponds to the first areas one by one, the second flat pattern is positioned in the corresponding first areas, the cross section of the second flat pattern in the direction perpendicular to the extending direction of the second flat pattern is in an inverted trapezoid shape, and the height of the upper surface of the second flat pattern is lower than that of the upper surface of the first flat pattern;
forming a light reflecting anode layer on the side surface of the first flat pattern and the second flat pattern;
forming a pattern of a pixel definition layer in the first region, the pattern of the pixel definition layer defining a second region;
forming a light emitting layer in the second region, wherein the height of the upper surface of the light emitting layer is lower than that of the upper surface of the first flat pattern;
and forming a cathode layer on the light emitting layer and the first flat pattern.
Optionally, the forming the first and second flat patterns includes:
forming the first flat pattern by using a positive photosensitive material, wherein the cross section of the first flat pattern in the direction vertical to the extending direction of the first flat pattern is trapezoidal;
and forming the second flat pattern in the first region by using a negative photosensitive material.
Optionally, a side surface of the first flat pattern is attached to a side surface of the second flat pattern, and forming the anode layer includes:
and depositing an anode layer material on the first flat pattern and the second flat pattern to form an anode layer on the upper surface of the second flat pattern and the upper half part of the side surface of the first flat pattern, wherein the height of the upper half part is not lower than that of the upper surface of the second flat pattern.
Optionally, the first flat pattern is spaced apart from the adjacent second flat pattern by a predetermined distance, and the forming the anode layer includes:
depositing an anode layer material on the first and second flat patterns, wherein the anode layer material naturally breaks at the edge of the upper surface of the second flat pattern to form the anode layer on the upper surface of the second flat pattern and the side surface of the first flat pattern.
The embodiment of the present invention further provides an OLED display substrate, including:
the thin film transistor array substrate comprises a first flat pattern and a second flat pattern, wherein the first flat pattern defines a plurality of first areas, the second flat pattern corresponds to the first areas one by one, the second flat pattern is located in the corresponding first areas, the section of the second flat pattern in the direction perpendicular to the extending direction of the second flat pattern is in an inverted trapezoid shape, and the height of the upper surface of the second flat pattern is lower than that of the upper surface of the first flat pattern;
a light reflecting anode layer on the side surface of the first flat pattern and the second flat pattern;
a pattern of pixel definition layers located within the first region, the pattern of pixel definition layers defining a second region;
a light emitting layer located in the second region, a height of an upper surface of the light emitting layer being lower than a height of an upper surface of the first flat pattern;
a cathode layer on the light emitting layer and the first flat pattern.
Optionally, the first flat pattern has a trapezoidal cross section perpendicular to its extension direction.
Optionally, an included angle between the side surface of the trapezoid and the thin film transistor array substrate is 50 ° to 70 °.
Optionally, the side surface of the first flat pattern is attached to the side surface of the adjacent second flat pattern; or
The first flat pattern and the adjacent second flat pattern are separated by a preset distance.
Optionally, the pixel defining layer employs a light blocking material.
The embodiment of the invention also provides a display device which comprises the OLED display substrate.
The embodiment of the invention has the following beneficial effects:
in the scheme, the groove-shaped accommodating part is formed by the first flat pattern and the second flat pattern, the light-reflecting anode layer, the pixel defining layer and the light-emitting layer are formed in the accommodating part, and the light-reflecting anode layer is positioned on the side surface of the first flat pattern and the upper surface of the second flat pattern, so that light emitted by the light-emitting layer is reflected to an effective light-emitting area by the light-reflecting anode layer positioned on the side surface of the first flat pattern when being transversely transmitted, thereby reducing light leakage and improving the light-emitting efficiency of the OLED display substrate.
Drawings
FIG. 1 is a schematic structural diagram of a conventional OLED display substrate;
FIGS. 2-5 are schematic diagrams illustrating the fabrication of an OLED display substrate according to an embodiment of the present invention;
fig. 6-9 are schematic views illustrating an OLED display substrate according to another embodiment of the invention.
Reference numerals
1 thin film transistor array substrate
2 pixel definition layer
3 anode layer
4 luminescent layer
5 cathode layer
6 first flat pattern
7 second flat figure
8 light blocking pixel definition layer
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, the conventional top-reflective OLED display substrate includes a thin film transistor array substrate 1, a pixel defining layer 2 located on the thin film transistor array substrate 1, an anode layer 3, a light emitting layer 4, and a cathode layer 5, where the anode layer 3 is made of reflective metal, as shown in fig. 1, a part of light emitted by the light emitting layer 4 is reflected by the anode layer 3 to an effective light emitting region and emitted, and another part of light is decomposed into transverse light and light inside the pixel defining layer 2, which causes a light leakage phenomenon, and reduces the light emitting efficiency of the OLED display substrate. The transverse light is transversely transmitted along the surface of the light-reflecting anode and finally converged on the pixel defining layer, and the escaping light is generated outwards along the pixel defining layer to form light leakage; the light inside the pixel defining layer forms a waveguide effect inside the pixel defining layer and is transmitted to the outside of the effective light emitting area along the pixel defining layer to form light leakage.
Embodiments of the present invention provide an OLED display substrate, a manufacturing method thereof, and a display device, which can reduce light leakage and improve light emitting efficiency of the OLED display substrate.
The embodiment of the invention provides a manufacturing method of an OLED display substrate, which comprises the following steps:
forming a first flat pattern and a second flat pattern on the thin film transistor array substrate, wherein the first flat pattern defines a plurality of first areas, the second flat pattern corresponds to the first areas one by one, the second flat pattern is positioned in the corresponding first areas, the cross section of the second flat pattern in the direction perpendicular to the extending direction of the second flat pattern is in an inverted trapezoid shape, and the height of the upper surface of the second flat pattern is lower than that of the upper surface of the first flat pattern;
forming a light reflecting anode layer on the side surface of the first flat pattern and the second flat pattern;
forming a pattern of a pixel definition layer in the first region, the pattern of the pixel definition layer defining a second region;
forming a light emitting layer in the second region, wherein the height of the upper surface of the light emitting layer is lower than that of the upper surface of the first flat pattern;
and forming a cathode layer on the light emitting layer and the first flat pattern.
The thin film transistor array substrate comprises a substrate and a driving circuit layer formed on the substrate, wherein the driving circuit layer comprises a driving transistor, a signal wire and the like.
In this embodiment, the first flat pattern and the second flat pattern form a groove-shaped receiving portion, the light-reflecting anode layer, the pixel defining layer, and the light-emitting layer are formed in the receiving portion, and the light-reflecting anode layer is located on the side surface of the first flat pattern and the upper surface of the second flat pattern, so that light emitted by the light-emitting layer is reflected to the effective light-emitting area by the light-reflecting anode layer located on the side surface of the first flat pattern when being laterally transmitted, thereby reducing light leakage and improving the light-emitting efficiency of the OLED display substrate.
Optionally, the forming the first and second flat patterns includes:
the first flat pattern is formed by positive photosensitive materials, and the section of the first flat pattern in the direction perpendicular to the extending direction of the first flat pattern is trapezoidal, so that the light-reflecting anode layer on the side surface of the first flat pattern can reflect transversely transmitted light emitted by the light-emitting layer to the effective light-emitting area, and the light-emitting efficiency of the OLED display substrate is improved;
and forming the second flat pattern in the first region by using a negative photosensitive material.
In one embodiment, the attaching the side surface of the first flat pattern to the side surface of the adjacent second flat pattern to form the anode layer includes:
and depositing an anode layer material on the first flat pattern and the second flat pattern to form an anode layer on the upper surface of the second flat pattern and the upper half part of the side surface of the first flat pattern, wherein the height of the upper half part is not lower than that of the upper surface of the second flat pattern.
In another embodiment, the first flat pattern is spaced apart from the adjacent second flat pattern by a predetermined distance, and the forming the anode layer includes:
depositing an anode layer material on the first and second flat patterns, wherein the anode layer material naturally breaks at the edge of the upper surface of the second flat pattern to form the anode layer on the upper surface of the second flat pattern and the side surface of the first flat pattern.
The embodiment of the present invention further provides an OLED display substrate, including:
the thin film transistor array substrate comprises a first flat pattern and a second flat pattern, wherein the first flat pattern defines a plurality of first areas, the second flat pattern corresponds to the first areas one by one, the second flat pattern is located in the corresponding first areas, the section of the second flat pattern in the direction perpendicular to the extending direction of the second flat pattern is in an inverted trapezoid shape, and the height of the upper surface of the second flat pattern is lower than that of the upper surface of the first flat pattern;
a light reflecting anode layer on the side surface of the first flat pattern and the second flat pattern;
a pattern of pixel definition layers located within the first region, the pattern of pixel definition layers defining a second region;
a light emitting layer located in the second region, a height of an upper surface of the light emitting layer being lower than a height of an upper surface of the first flat pattern;
a cathode layer on the light emitting layer and the first flat pattern.
In this embodiment, the first flat pattern and the second flat pattern form a groove-shaped receiving portion, the light-reflecting anode layer, the pixel defining layer, and the light-emitting layer are formed in the receiving portion, and the light-reflecting anode layer is located on the side surface of the first flat pattern and the upper surface of the second flat pattern, so that light emitted by the light-emitting layer is reflected to the effective light-emitting area by the light-reflecting anode layer located on the side surface of the first flat pattern when being laterally transmitted, thereby reducing light leakage and improving the light-emitting efficiency of the OLED display substrate.
In a specific embodiment, the cross section of the first flat pattern in the direction perpendicular to the extending direction of the first flat pattern is trapezoidal, so that the light reflecting anode layer on the side surface of the first flat pattern can reflect the light emitted by the light emitting layer and transversely transmitted to the effective light emitting area, and the light emitting efficiency of the OLED display substrate is improved.
Preferably, an included angle between the side surface of the trapezoid and the thin film transistor array substrate is 50 ° to 70 °, so that the light reflecting anode layer on the side surface of the first flat pattern can effectively reflect the laterally propagating light emitted from the light emitting layer and reflect most of the light to the effective light emitting region.
Wherein, the side surface of the first flat pattern can be attached to the side surface of the adjacent second flat pattern; or the first flat pattern and the adjacent second flat pattern are separated by a preset distance.
Preferably, the pixel defining layer is made of a light blocking material, so that light rays emitted by the light emitting layer can be blocked from transversely transmitting through the pixel defining layer, light leakage can be further reduced, and the light emitting efficiency of the OLED display substrate is improved.
The reflecting anode layer can be made of Al, the Al has good electric conductivity and reflecting performance, the price is low, and the production cost of the OLED display substrate can be reduced.
The OLED display substrate and the method for fabricating the same according to the present invention will be further described with reference to the accompanying drawings and specific embodiments:
in an embodiment, a side surface of the first flat pattern may be attached to a side surface of the adjacent second flat pattern, as shown in fig. 2 to 5, the method for manufacturing the OLED display substrate of the embodiment includes the following steps:
step 1, as shown in fig. 2, forming a first flat pattern 6 and a second flat pattern 7 on a thin film transistor array substrate 1;
the first flat pattern 6 and the second flat pattern 7 are formed through two composition processes, wherein the first flat pattern 6 can be formed first, and then the second flat pattern 7 can be formed; or the second flat pattern 7 is formed first, and then the first flat pattern 6 is formed, and the upper surfaces of the first flat pattern 6 and the second flat pattern 7 are both flat.
Specifically, a layer of positive photosensitive material may be formed on the thin film transistor array substrate 1, and a first flat pattern 6 may be formed by exposure and development, the first flat pattern 6 defining a plurality of first regions, and a cross section of the first flat pattern 6 in a direction perpendicular to an extending direction thereof may be trapezoidal.
A layer of negative photosensitive material can be formed on the thin film transistor array substrate 1, a second flat pattern 7 is formed through exposure and development, the second flat pattern 7 corresponds to the first area one by one, the second flat pattern 7 is located in the corresponding first area, the cross section of the second flat pattern 7 in the direction perpendicular to the extending direction of the second flat pattern 7 is in an inverted trapezoid shape, the side surface of the second flat pattern 7 is attached to the side surface of the first flat pattern 6, and the height of the upper surface of the second flat pattern 7 is lower than that of the upper surface of the first flat pattern 6.
Step 2, as shown in fig. 3, forming an anode layer 3 on the first flat pattern 6 and the second flat pattern 7;
specifically, a reflective metal layer may be deposited on the thin film transistor array substrate 1 after the step 1, and the reflective metal layer may be patterned to form the anode layer 3, where the anode layer 3 is located on the upper surface of the second flat pattern 7 and the upper half of the side surface of the first flat pattern 6, and may also be located in a partial region of the upper surface of the first flat pattern 6. Before the anode layer 3 is formed, an electrode lap via hole may be reserved on the thin film transistor array substrate 1, so that the anode layer 3 can be connected to the drain of the driving thin film transistor in the thin film transistor array substrate 1 through the electrode lap via hole.
Step 3, as shown in fig. 4, forming a light-blocking pixel defining layer 8 and a light-emitting layer 4 on the thin film transistor array substrate 1 after the step 2;
specifically, a layer of light blocking material may be deposited on the thin film transistor array substrate 1 after the step 2, and the light blocking material may be patterned to form the light blocking pixel defining layer 8, where the light blocking pixel defining layer 8 defines a pixel opening region (i.e., the second region), and the light blocking pixel defining layer 8 may improve light leakage of the pixel defining layer material due to the waveguide effect in the conventional design. The light-blocking material can be an inorganic non-metal transparent material or an organic material with good light-blocking property.
Then, a light-emitting material is deposited in the pixel opening region to form a light-emitting layer 4.
Step 4, as shown in fig. 5, a cathode layer 5 is formed on the thin film transistor array substrate that has undergone step 3.
Specifically, a whole layer of semitransparent conductive material may be deposited on the thin film transistor array substrate 1 after step 3 as the cathode layer 5, and the cathode layer 5 may use Mg or Ag.
In the embodiment, the first flat pattern and the second flat pattern form a groove-shaped accommodating portion, and the light-reflecting anode layer, the pixel defining layer and the light-emitting layer are formed in the accommodating portion, wherein the light-reflecting anode layer is located on the side surface of the first flat pattern and the upper surface of the second flat pattern, so that light emitted by the light-emitting layer is reflected to the effective light-emitting area by the light-reflecting anode layer located on the side surface of the first flat pattern when the light is laterally transmitted, thereby reducing light leakage and improving the light-emitting efficiency of the OLED display substrate.
In another embodiment, the first flat pattern and the adjacent second flat pattern are separated by a predetermined distance, as shown in fig. 6 to 9, the method for manufacturing the OLED display substrate of this embodiment includes the following steps:
step 1, as shown in fig. 6, forming a first flat pattern 6 and a second flat pattern 7 on a thin film transistor array substrate 1;
the first flat pattern 6 and the second flat pattern 7 are formed through two composition processes, wherein the first flat pattern 6 can be formed first, and then the second flat pattern 7 can be formed; or the second flat pattern 7 is formed first, and then the first flat pattern 6 is formed, and the upper surfaces of the first flat pattern 6 and the second flat pattern 7 are both flat.
Specifically, a layer of positive photosensitive material may be formed on the thin film transistor array substrate 1, and a first flat pattern 6 may be formed by exposure and development, the first flat pattern 6 defining a plurality of first regions, and a cross section of the first flat pattern 6 in a direction perpendicular to an extending direction thereof may be trapezoidal.
A layer of negative photosensitive material can be formed on the thin film transistor array substrate 1, a second flat pattern 7 is formed through exposure and development, the second flat pattern 7 corresponds to the first area one by one, the second flat pattern 7 is located in the corresponding first area, the cross section of the second flat pattern 7 in the direction perpendicular to the extending direction of the second flat pattern 7 is in an inverted trapezoid shape, the second flat pattern 7 and the first flat pattern 6 are separated by a preset distance, and the height of the upper surface of the second flat pattern 7 is lower than that of the upper surface of the first flat pattern 6.
Because the section of the second flat pattern 7 in the direction perpendicular to the extending direction of the second flat pattern 7 is an inverted trapezoid, and the first flat pattern 6 and the second flat pattern 7 are separated by a preset distance, when the anode layer and the pixel defining layer are formed on the second flat pattern 7, the edges of the anode layer and the pixel defining layer on the upper surface of the second flat pattern 7 will be naturally broken, so that the process risk can be reduced, and the number of the composition process can be reduced.
Step 2, as shown in fig. 3, forming an anode layer 3 on the first flat pattern 6 and the second flat pattern 7;
specifically, a light-reflecting metal layer may be deposited on the thin film transistor array substrate 1 after the step 1, the light-reflecting metal layer may be patterned to form the anode layer 3, the light-reflecting metal layer may be naturally broken at the edge of the second flat pattern 7 when deposited on the second flat pattern 7, and the formed anode layer 3 may be located on the upper surface of the second flat pattern 7 and the side surface of the first flat pattern 6, or may be located in a partial area of the upper surface of the first flat pattern 6. Before the anode layer 3 is formed, an electrode lap via hole may be reserved on the thin film transistor array substrate 1, so that the anode layer 3 can be connected to the drain of the driving thin film transistor in the thin film transistor array substrate 1 through the electrode lap via hole.
Step 3, as shown in fig. 8, forming a light blocking pixel defining layer 8 on the thin film transistor array substrate 1 after the step 2;
specifically, a layer of light blocking material may be deposited on the thin film transistor array substrate 1 after the step 2, the light blocking material may be patterned to form a light blocking pixel defining layer 8, the light blocking pixel defining layer 8 fills a gap between the second flat pattern 7 and the first flat pattern 6 to define a pixel opening region (i.e., the second region), and the light blocking pixel defining layer 8 may improve light leakage of the pixel defining layer material due to a waveguide effect in a conventional design. The light-blocking material can be an inorganic non-metal transparent material or an organic material with good light-blocking property.
Step 4, as shown in fig. 9, a light emitting layer 4 and a cathode layer 5 are formed on the thin film transistor array substrate that has undergone step 3.
Specifically, a light-emitting material is deposited in the pixel opening region to form the light-emitting layer 4. A full layer of a semi-transparent conductive material may then be deposited on top as the cathode layer 5, which cathode layer 5 may be of Mg or Ag.
In the embodiment, the first flat pattern and the second flat pattern form a groove-shaped accommodating portion, and the light-reflecting anode layer, the pixel defining layer and the light-emitting layer are formed in the accommodating portion, wherein the light-reflecting anode layer is located on the side surface of the first flat pattern and the upper surface of the second flat pattern, so that light emitted by the light-emitting layer is reflected to the effective light-emitting area by the light-reflecting anode layer located on the side surface of the first flat pattern when the light is laterally transmitted, thereby reducing light leakage and improving the light-emitting efficiency of the OLED display substrate.
The embodiment of the invention also provides a display device which comprises the OLED display substrate. The display device may be: the display device comprises a television, a display, a digital photo frame, a mobile phone, a tablet personal computer and any other product or component with a display function, wherein the display device further comprises a flexible circuit board, a printed circuit board and a back plate.
In the embodiments of the methods of the present invention, the sequence numbers of the steps are not used to limit the sequence of the steps, and for those skilled in the art, the sequence of the steps is not changed without creative efforts.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (10)

1. A manufacturing method of an OLED display substrate is characterized by comprising the following steps:
forming a first flat pattern and a second flat pattern on the thin film transistor array substrate, wherein the first flat pattern defines a plurality of first areas, the second flat pattern corresponds to the first areas one by one, the second flat pattern is positioned in the corresponding first areas, the cross section of the second flat pattern in the direction perpendicular to the extending direction of the second flat pattern is in an inverted trapezoid shape, and the height of the upper surface of the second flat pattern is lower than that of the upper surface of the first flat pattern;
forming a light reflecting anode layer on the side surface of the first flat pattern and the second flat pattern;
forming a pattern of a pixel defining layer in the first area, wherein the pattern of the pixel defining layer defines a second area, and the pixel defining layer is made of a light blocking material;
forming a light emitting layer in the second region, wherein the height of the upper surface of the light emitting layer is lower than that of the upper surface of the first flat pattern;
and forming a cathode layer on the light emitting layer and the first flat pattern.
2. The method for manufacturing the OLED display substrate according to claim 1, wherein the forming the first and second flat patterns comprises:
forming the first flat pattern by using a positive photosensitive material, wherein the cross section of the first flat pattern in the direction vertical to the extending direction of the first flat pattern is trapezoidal;
and forming the second flat pattern in the first region by using a negative photosensitive material.
3. The method of claim 2, wherein the attaching the side surface of the first flat pattern to the adjacent side surface of the second flat pattern to form the anode layer comprises:
and depositing an anode layer material on the first flat pattern and the second flat pattern to form an anode layer on the upper surface of the second flat pattern and the upper half part of the side surface of the first flat pattern, wherein the height of the upper half part is not lower than that of the upper surface of the second flat pattern.
4. The method of claim 2, wherein the first flat pattern is spaced apart from the adjacent second flat pattern by a predetermined distance, and the forming the anode layer comprises:
depositing an anode layer material on the first and second flat patterns, wherein the anode layer material naturally breaks at the edge of the upper surface of the second flat pattern to form the anode layer on the upper surface of the second flat pattern and the side surface of the first flat pattern.
5. An OLED display substrate, comprising:
the thin film transistor array substrate comprises a first flat pattern and a second flat pattern, wherein the first flat pattern defines a plurality of first areas, the second flat pattern corresponds to the first areas one by one, the second flat pattern is located in the corresponding first areas, the section of the second flat pattern in the direction perpendicular to the extending direction of the second flat pattern is in an inverted trapezoid shape, and the height of the upper surface of the second flat pattern is lower than that of the upper surface of the first flat pattern;
a light reflecting anode layer on the side surface of the first flat pattern and the second flat pattern;
the pattern of the pixel defining layer is positioned in the first area, the pattern of the pixel defining layer defines a second area, and the pixel defining layer adopts a light blocking material;
a light emitting layer located in the second region, a height of an upper surface of the light emitting layer being lower than a height of an upper surface of the first flat pattern;
a cathode layer on the light emitting layer and the first flat pattern.
6. The OLED display substrate of claim 5, wherein the first flat pattern has a trapezoidal cross section perpendicular to the extending direction of the first flat pattern.
7. The OLED display substrate of claim 6, wherein the included angle between the side surface of the trapezoid and the thin film transistor array substrate is 50-70 °.
8. The OLED display substrate according to claim 6, wherein the side surface of the first flat pattern is attached to the side surface of the adjacent second flat pattern; or
The first flat pattern and the adjacent second flat pattern are separated by a preset distance.
9. The OLED display substrate of claim 5, wherein the pixel defining layer is made of a light blocking material.
10. A display device comprising the OLED display substrate of any one of claims 5-9.
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