CN112331703B - Display panel and display device - Google Patents

Display panel and display device Download PDF

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Publication number
CN112331703B
CN112331703B CN202011012555.XA CN202011012555A CN112331703B CN 112331703 B CN112331703 B CN 112331703B CN 202011012555 A CN202011012555 A CN 202011012555A CN 112331703 B CN112331703 B CN 112331703B
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area
display panel
display
layer
region
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CN112331703A (en
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代好
张正川
叶添昇
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Wuhan Tianma Microelectronics Co Ltd
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Wuhan Tianma Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Abstract

The embodiment of the application provides a display panel and display device, and the display panel includes: a sensor; a substrate, and a display region on the substrate; the display area comprises a first display area and a second display area; the sensor at least partially overlaps a projection of the second display area in the substrate plane; the second display area comprises a plurality of second pixel units, and a high light transmittance area is arranged between every two adjacent second pixel units; in the thickness direction of the display panel, the number of the film layers in the high light transmittance area is less than that of the film layers in the display area; and the first barrier dam is positioned between the second pixel unit and the high light transmittance region. The sensor is arranged below the second display area, so that a full screen in the true sense is realized; the transmissivity of the second display area is improved by arranging the high-transmissivity area; meanwhile, the barrier dam is arranged between the pixel unit and the high light transmittance area, so that the influence of the arrangement of the high light transmittance area on the normal display of the second display area is avoided.

Description

Display panel and display device
[ technical field ] A method for producing a semiconductor device
The application relates to the technical field of display, in particular to a display panel and a display device.
[ background of the invention ]
With the vigorous development of flat panel Display technology, Organic Light Emitting Display (OLED) has been widely used due to its excellent characteristics of self-luminescence, high brightness, wide viewing angle, fast response, etc.
In recent two years, with the continuous popularization of the concept of a 'full screen' product, in the design of an OLED display product, how to realize a full screen in a real sense on a display screen without influencing the sensing function and the service life of the display screen becomes a very important subject in the current OLED technology.
[ application contents ]
In view of the foregoing, the present invention provides a display panel, a display device of the display panel, and a method for manufacturing the display panel.
The present invention provides a display panel including:
a sensor;
a substrate, and a display region on the substrate;
the display area comprises a first display area and a second display area;
the sensor at least partially overlaps a projection of the second display area in the substrate plane;
the first display area comprises a plurality of gate lines extending along a first direction, a plurality of data lines extending along a second direction, and a plurality of first pixel units electrically connected with the gate lines and the data lines;
the second display area comprises a plurality of second pixel units, and a high-light-transmittance area is arranged between every two adjacent second pixel units;
the display panel further comprises a first metal layer, and the first metal layer is not overlapped with the high light transmittance region in the thickness direction of the display panel;
and the first blocking dam is positioned between the second pixel unit and the high light transmittance region.
The invention also provides a display device comprising the display panel.
The invention further comprises a manufacturing method of the display panel.
According to the display panel and the display device provided by the embodiment of the application, the display area is divided into the first display area and the second display area, and the sensor is arranged below the second display area, so that a real full-screen is realized; meanwhile, the transmissivity of the second display area is improved by arranging the high-transmissivity area in the gap between the pixel units of the second display area; furthermore, a blocking dam is further arranged between the pixel unit of the second display area and the high light transmittance area, so that the influence of the arrangement of the high light transmittance area on the normal display of the second display area is avoided.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;
FIG. 2 is a schematic cross-sectional view taken along line A1-A2 of FIG. 1;
FIG. 3 is a schematic view of a pixel arrangement of the first display region of FIG. 1;
FIG. 4 is a schematic view of a pixel arrangement of the second display region of FIG. 1;
FIG. 5 is a schematic cross-sectional view taken along line B1-B2 of FIG. 4;
FIG. 6a is a schematic diagram of a cathode metal layer design of the first display region of FIG. 1;
FIG. 6b is a schematic diagram of a cathode metal layer design in the second display region of FIG. 1;
FIG. 6c is a schematic view of another cathode metal layer design for the second display region of FIG. 1;
FIG. 6d is a schematic view of another cathode metal layer design for the second display region of FIG. 1;
FIG. 7 is a schematic structural diagram of another display panel provided in the present application;
FIG. 8a is a schematic structural diagram of another display panel provided in the present application;
FIG. 8b is a schematic structural diagram of another display panel provided in the present application;
fig. 9 is a manufacturing method of a display panel provided in the present application;
fig. 10 illustrates a process step of forming an inverted trapezoidal first barrier dam according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a mask provided in the present application;
fig. 12 is a schematic structural diagram of a display device provided in the present application.
[ detailed description ] embodiments
For better understanding of the technical solutions of the present application, the following detailed descriptions of the embodiments of the present application are provided with reference to the accompanying drawings.
It should be understood that the embodiments described are only a few embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
In the description herein, it is to be understood that the terms "substantially", "approximately", "about", "approximately", "substantially" and the like in the claims and the examples are intended to be inclusive and mean that the term "substantially" may be interpreted as an alternative to an exact value within a reasonable process operating range or tolerance.
It should be understood that although the terms first, second, third, etc. may be used to describe the display regions in the embodiments of the present application, the display regions should not be limited to these terms. These terms are only used to distinguish the display areas from each other. For example, the first display region may also be referred to as a second display region, and similarly, the second display region may also be referred to as a first display region without departing from the scope of the embodiments of the present application.
The applicant provides a solution to the problems of the prior art through intensive research. Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure, fig. 2 is a schematic structural diagram of a cross section taken along a line a1-a2 in fig. 1, fig. 3 is a schematic structural diagram of a region C in fig. 1, fig. 4 is a schematic structural diagram of a region D in fig. 1, and fig. 5 is a schematic structural diagram of a cross section taken along a line B1-B2 in fig. 4. As shown in fig. 1 to 5, the display panel 01 includes: a sensor 001; a substrate 30, and a display region 002 located on the substrate; the display area 002 includes a first display area 10 and a second display area 20; the sensor 001 at least partially overlaps the projection of the second display area 20 in the plane of the substrate 30; the first display area 10 includes a plurality of gate lines 101 extending along a first direction D1, a plurality of data lines 102 extending along a second direction D2, and a plurality of first pixel units 103 electrically connected to the gate lines 101 and the data lines 102; the second display area 20 includes a plurality of second pixel units 203, and a high transmittance area 210 is disposed between two adjacent second pixel units. As shown in fig. 5, the display panel 01 further includes a first metal layer 240, which does not overlap with the high light transmittance region in a thickness direction of the display panel (e.g., a direction D3 in fig. 5). The display panel 01 further includes a first barrier rib 220 between the second sub-pixel 203 and the high transmittance region 210.
The display panel provided by the embodiment of the application can realize a real comprehensive screen. Specifically, a display area of the display panel is divided into a first display area and a second display area, wherein the first display area comprises first pixel units for displaying pictures, and the second display area comprises second pixel units for displaying pictures; the sensor is disposed below the second display area in a thickness direction of the display panel. That is to say, the display area corresponding to the sensor position may also perform normal display, rather than digging out a part of the pixel units in the display area to leave space for the sensor as in the prior art, that is, the display area corresponding to the sensor position in the prior art cannot perform normal display.
In order to ensure that the sensor can normally work, enough light must reach the sensor through the second display area, therefore, the inventor of the present application removes a part of the metal layer of the area on the premise of ensuring the normal display of the second display area, so that the light transmittance of the part of the area is enhanced, and the area with enhanced light transmittance is the high light transmittance area described in the present application. The high light transmittance region referred to herein means a region having a light transmittance of 15% or more.
Optionally, for the liquid crystal display panel, the first metal layer is a film layer forming the driving circuit; for the organic light emitting display panel, the first metal layer is a film layer and/or a cathode metal layer in the driving circuit.
Generally, the film layers on the display panel are coated in a whole layer and then developed by photolithography to obtain a specific shape, so that the number of the film layers is reduced at some positions, and the film layers are peeled off after the coating. However, in the process of peeling off these film layers, because the film-forming property of the film layer is good, peeling cracks and peeling particulate matters are easy to generate, and these cracks and particulate matters are easy to reach the pixel unit area, thereby causing display defects. In order to avoid the defects, the inventor of the present application sets a barrier between the position (the high light transmittance region as described above) where the film layer is peeled off and the pixel unit, so as to prevent cracks and particles generated when the film layer is peeled off from reaching the pixel unit region.
According to the display panel provided by the embodiment of the application, the display area is divided into the first display area and the second display area, and the sensor is arranged below the second display area, so that a full screen in the true sense is realized; meanwhile, the transmissivity of the second display area is improved by additionally arranging a high-transmissivity area between the pixel units of the second display area; further, in order to avoid the influence of the arrangement of the high light transmittance area on the normal display of the pixel units of the second display area, a barrier is arranged between the pixel units of the second display area and the high light transmittance area.
Sensors such as cameras and the like. The display panel comprises a sensor, and the sensor can be integrated in a display screen or hung outside the display screen.
A substrate, which may be a rigid substrate, such as glass; but also flexible substrates such as polyimide.
The position, size, shape and number of the second display area vary according to the design of the actual product, for example, the position of the second display area may be set at the upper left corner of the display area, the shape of the second display area may be designed as a circle, a bang type, etc., the number of the second display areas may be more than 2, and fig. 1 is only a schematic illustration for explaining the invention point, and does not constitute a limitation to the concept of the invention.
Further, for the organic light emitting display panel, in order to increase the transmittance of the second display region, the inventors of the present application have designed the cathode metal layer of the second display region, as shown in fig. 6b, 6c, and 6 d. In contrast, fig. 6a shows the cathode metal layer design of the first display area. As shown in fig. 6a to 6d, the cathode metal 140 of the first display area is designed as a whole layer, and the cathode metal 240 of the second display area is patterned to form a plurality of cathode metal blocks 2401 and cathode traces 2402 connected to the cathode metal blocks. Compared with the design of the whole layer of cathode metal of the first display area, the cathode pattern design of the second display area can effectively reduce the area of the cathode metal. Since the transmittance of the cathode material is low, a smaller area of the cathode material means an increase in transmittance.
In this application, the patterning design of the cathode metal layer of the second display region may be changed according to the arrangement of the pixel units. For example, the design of the cathode metal layer 240 in fig. 6a is suitable for the case of the pixel unit being arranged in a row, the design of the cathode metal layer 240 in fig. 6c is suitable for the case of the pixel unit being arranged in a staggered manner, and the design of the cathode metal layer 240 in fig. 6d is suitable for both the pixel unit being arranged in a forward direction and the pixel unit being arranged in a staggered manner. The pixel unit is arranged in a positive mode, that is, the pixel units in each row are aligned with each other, and the pixel unit is arranged in a staggered mode, that is, the pixel units in two adjacent rows are staggered with each other.
It should be noted here that the arrangement of the sub-pixels (e.g. R, G, B) with different colors is not limited to the pi arrangement shown in fig. 6a to 6d, and may be other arrangements, which is not limited by the present invention.
In this application, the cathode metal of the second display region may be connected to the cathode metal of the first display region according to the design shown in fig. 6b to 6d, or the cathode metal of the second display region may be connected to the cathode signal line located in the non-display region of the display panel according to the design shown in fig. 6b to 6 d.
The cathode block 2401 covering the pixel cell in fig. 6b to 6d can be polygonal, circular or elliptical, and the cathode trace 2401 connecting the two cathode blocks can be a straight line, a V-shaped line or an arc (such as an S-shaped curve) with a certain curvature.
Optionally, a first barrier dam is disposed around the second pixel cell along the edge profile of the cathode metal 240.
Optionally, the first blocking dam is disposed around the high transmittance region along an edge profile of the high transmittance region.
Optionally, in order not to affect the definition of the sensor, the edge profile of the high transmittance region is arc-shaped because the diffraction fringes generated by the arc-shaped edge profile are weak.
Further, in order to ensure the transmittance of the second display region, the inventors of the present application have designed a driving circuit for the pixel unit of the second display region. Specifically, the driving circuit layer on the display panel includes a first driving circuit region and a second driving circuit region; the first driving circuit area is used for driving the first pixel unit, and the second driving circuit area is used for driving the second pixel unit; the first driving circuit region and the second driving circuit region are both located in the first display region. Since the formation of the driving circuit involves many metal layers having low light transmittance, such as metal Mo-Al-Mo, Ti-Al-Ti, etc., it is advantageous to move the driving circuit for driving the second pixel unit to the first display region to ensure sufficient light transmittance of the second display region.
Alternatively, the second driving circuit region may be a part of the first driving circuit region, that is, the second pixel units implement display by sharing the driving circuit of the first pixel unit.
Optionally, the interlayer insulating layer for insulating between the metal layers of the driving circuit may extend to the high light transmittance region.
Further, in order to ensure the transmittance of the second display region, the first barrier dam is made of a transparent organic photoresist material, and the transmittance of the transparent organic photoresist material is greater than 90%.
Optionally, when the material of the first barrier dam is a transparent organic photoresist material, the transparent organic photoresist material layer may extend to the high light transmittance region.
As shown in fig. 5, the first barrier dam 220 may be formed in a plurality of trapezoids side by side to form a step difference, so as to prevent cracks from extending to the pixel region when the film layer is peeled off.
In order to avoid cracks and particles generated by peeling of the film layer from extending to the pixel unit when the high light transmittance region is formed, the present inventors have designed the structure of the first barrier dam. Fig. 7 is a schematic structural view of still another display panel provided in the present application, and as shown in fig. 7, the pattern of the first barrier dam may be a trapezoid (220 in fig. 7), an inverted trapezoid (250 in fig. 7), or a repeated arrangement of the above patterns. The advantage of using the inverted trapezoid design is that when a film (such as the cathode metal layer 240 shown in fig. 7) is formed, the cathode metal film is directly disconnected near the first barrier dam due to the inverted trapezoid structure of the first barrier dam. That is, the cathode metal layer is not deposited in the high transmittance region, so that a subsequent stripping process is not required, and the problems of cracks, particles and the like caused by stripping are not mentioned.
With continued reference to fig. 7, the first barrier dam 250 includes: a first bottom surface 2501 parallel to the substrate plane and near the substrate side; a second bottom surface 2502 opposite to the first bottom surface 2501 and on the side away from the substrate; a first side surface 2503 intersecting the first bottom surface 2501 and adjacent to a side of the second pixel unit 203; a second side surface 2504 intersecting the first bottom surface 2501 and located near the high transmittance region 210; wherein the projection of the first bottom surface 2501 in the substrate plane has a first width W1 in the first direction D1, and the projection of the second bottom surface 2502 in the substrate plane has a second width W2 in the first direction D1; in the thickness direction D3 of the display panel, the first side 2503 has a first height H1, and the second side 2504 has a second height H2.
Wherein the second width W2 is equal to the first width W1 plus a constant value n, 0 < n ≦ 4 μm.
Optionally, the first width W1 of the first barrier dam 250 is 5 μm to 20 μm (inclusive). When the first width W1 is too large, the transmittance of the second display region may be affected, and when it is too small, the process limit may be exceeded.
Optionally, the first blocking dam is an inverted trapezoid structure with the same height, i.e. the first height H1 is equal to the second height H2.
Further, in order to ensure the normal packaging effect of the pixel unit region, the inventor of the present application makes a slope design on the first blocking dam, as shown in fig. 8 a. The first barrier dam 250 further includes: a first side surface 2503 intersecting the first bottom surface 2501 and adjacent to a side of the second pixel unit 203; a second side surface 2504 intersecting the first bottom surface 2501 and located near the high transmittance region 210; in the thickness direction D3 of the display panel, the first side 2503 has a first height H1, and the second side 2504 has a second height H2, wherein the first height H1 is smaller than the second height H2. The advantage of designing like this lies in, first barrier dam is high in the one side that is close to high light transmittance district, and the one side that is close to pixel cell district is low, forms the separation transition region from this, and when the separation crack propagation, can also guarantee subsequent encapsulation effect.
With continued reference to fig. 8a, the display panel 001 further includes a driving circuit layer 40, an organic light emitting device layer 50, and an encapsulation layer 60; the encapsulation layer 60 comprises a first inorganic encapsulation layer 601, an organic encapsulation layer 602 and an inorganic encapsulation layer 603 which are sequentially arranged; in the thickness direction D3 of the display panel, the driving circuit layer 40 has a first thickness h1, the organic light emitting device layer 50 has a second thickness h2, the first inorganic encapsulation layer has a third thickness h3, and the organic encapsulation layer has a fourth thickness h 4.
In order to prevent the organic package layer from overflowing, the second height H2 is greater than or equal to the first thickness H1+ the second thickness H2+ the third thickness H3+ the fourth thickness H4. The first barrier dam forms a barrier of the organic packaging layer, and the organic packaging layer is naturally disconnected at the first barrier dam, so that the packaging reliability is improved.
Optionally, the second height H2 is between 2 μm and 12 μm (inclusive). The second height H2 is too high, which affects the transmittance of the second display region, and too low, which exceeds the process limit and is not favorable for processing.
The ramp design shown in fig. 8a uses an inverted trapezoidal structure: the first side surface 2503 is disposed obliquely to the first bottom surface 2501, and the second side surface 2504 is disposed obliquely to the first bottom surface 2501.
Optionally, the included angle a between the first side surface 2503 and the first bottom surface 2501 is an obtuse angle, and the included angle B between the second side surface 2504 and the first bottom surface 2501 is an obtuse angle (as shown in fig. 8 a).
Optionally, the included angle a between the first side surface 2503 and the first bottom surface 2501 is acute, and the included angle B between the second side surface 2504 and the first bottom surface 2501 is obtuse (as shown in fig. 8B).
As shown in fig. 8a and 8b, due to the slope design of the first blocking dam, the organic encapsulation layer cannot cross the first blocking dam, thereby effectively avoiding the overflow of the organic encapsulation layer and ensuring the encapsulation effect.
In order to obtain the inverted trapezoidal structure of the first barrier dam, the material of the first barrier dam may be a transparent negative photoresist material. Characteristics of negative photoresist: the portion irradiated with light is cured and left, and the portion not irradiated with light is removed by the developing solution. Since the exposure time of the side of the first barrier dam close to the light source (i.e., the side far from the substrate) is longer than the exposure time of the side far from the light source (i.e., the side near the substrate), the curing effect of the side of the first barrier dam far from the substrate is better than that of the side near the substrate. By controlling the exposure time, the side of the first blocking dam away from the substrate is completely cured, and the side close to the substrate is not completely cured, so that the side close to the substrate is easily etched by the developing solution in the subsequent developing process, and an inverted trapezoidal structure is obtained.
Fig. 9 is a method for manufacturing the display panel, which includes:
a substrate 30, such as glass, polyimide, or the like, is provided. According to the requirements of actual products, the area on the substrate can be divided into a non-display area, a first display area and a second display area;
preparing a driving circuit layer 40 on the substrate, wherein the driving circuit layer comprises a gate metal layer, a gate insulating layer, an active layer, a source drain metal layer, an interlayer insulating layer and the like for forming a Thin Film Transistor (TFT);
preparing an organic light emitting device layer 50 on the driving circuit layer 40, wherein the organic light emitting device layer comprises a cathode metal layer, a cap layer and the like;
after the preparation of the cathode metal layer 240 is completed and before the preparation of the cap layer 270 is started, the cathode metal layer in the gap between two adjacent second pixel units 203 is removed by using the laser 80, so as to form the high light transmittance region 210.
An encapsulation layer 60 is prepared on the organic light emitting device layer, and the encapsulation layer 60 includes a first inorganic encapsulation layer 601, an organic encapsulation layer 602, and a second inorganic encapsulation layer 603, which are sequentially disposed.
It should be noted that the first blocking dam 220 may be formed after the fabrication of the driving circuit layer 40 and before the fabrication of the organic light emitting device layer 50 (as shown in fig. 9 (c)), or may be formed during the fabrication of the driving circuit layer (for example, during the formation of the gate insulating layer and the interlayer insulating layer).
Fig. 10 is a process step of forming an inverted trapezoidal first barrier dam according to an embodiment of the present invention, including:
coating a photoresist layer 901, wherein the photoresist layer 901 is a positive photoresist;
after the photoresist layer 901 is prepared, an indium zinc oxide layer 902 is coated in an area where an inverted trapezoid needs to be formed;
irradiating the photoresist layer 901 coated with the indium zinc oxide layer 902 by using a light source, wherein the light source can be a laser light source, a UV light source, an LED light source and the like;
placing the substrate irradiated by the light source into a developing solution for developing to obtain an inverted trapezoidal blocking dam 250;
and carrying out dry etching on the developed substrate to remove the indium zinc oxide layer.
And removing the cathode metal layer positioned in the gap between two adjacent second pixel units by using laser, specifically, the method comprises the following steps: the cathode metal layer is masked with a mask 70 (shown in fig. 11) having an opening area 701, and the cathode metal layer covered with the mask is irradiated with laser.
In order to ensure that the first blocking dam is not damaged by the laser light source, the opening area of the mask plate is overlapped with the inner side area of the first blocking dam. The inner side area of the first barrier dam is an area surrounded by the side of the first barrier dam close to the high transmittance area.
Further, in order to ensure that the laser light source does not damage the inside region of the first barrier dam, the area S1 of the opening region of the mask plate is smaller than the area S2 of the inside region of the first barrier dam.
Fig. 12 is a schematic structural diagram of a display device provided in an embodiment of the present application, where the display device 1 includes any one of the display panels 01 described above. The display device can be any electronic equipment with a display function, such as a mobile phone, a tablet computer, a notebook computer, an electronic paper book or a television.
Because the display device provided by the embodiment of the invention comprises the display panel, the display device is adopted, and the sensor is arranged below the second display area, so that a full screen is really realized; meanwhile, the transmittance of the second display region is improved by arranging the high transmittance region through the gap between the pixel units of the second display region; furthermore, a blocking dam is further arranged between the pixel unit of the second display area and the high light transmittance area, so that the influence of the arrangement of the high light transmittance area on the normal display of the second display area is avoided.
It should be noted that the number and size of the first blocking dams shown in the drawings of the present application are only used for illustrating the inventive concept, and do not constitute a limitation on the actual number and size of the first blocking dams.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the scope of protection of the present application.

Claims (17)

1. A display panel, comprising:
a sensor;
a substrate, and a display region on the substrate;
the display area comprises a first display area and a second display area;
the sensor at least partially overlaps a projection of the second display area in the substrate plane;
the first display area comprises a plurality of gate lines extending along a first direction, a plurality of data lines extending along a second direction, and a plurality of first pixel units electrically connected with the gate lines and the data lines;
the second display area comprises a plurality of second pixel units, and a high-light-transmittance area is arranged between every two adjacent second pixel units;
the display panel further comprises a first metal layer, in the thickness direction of the display panel, the first metal layer in the second display area is not overlapped with the high light transmittance area, and the second pixel unit is overlapped with the first metal layer;
a first barrier dam between the second pixel unit and the high light transmittance region;
the first blocking dam comprises a trapezoidal structure, and the width of one side, close to the substrate, of the trapezoidal structure is larger than the width of one side, far away from the substrate, of the trapezoidal structure in the thickness direction of the display panel;
and a step difference is formed on one side of the first blocking dam close to the second pixel unit.
2. The display panel of claim 1, wherein the first barrier dam further comprises:
the first bottom surface is parallel to the substrate plane and close to one side of the substrate;
the second bottom surface is opposite to the first bottom surface and is far away from one side of the substrate;
the projection of the first bottom surface in the substrate plane has a first width W1 in a first direction and the projection of the second bottom surface in the substrate plane has a second width W2 in the first direction, wherein the second width W2 is equal to the first width W1 plus a constant value n, n being 0 μm to 4 μm, inclusive.
3. The display panel of claim 2, wherein the first width W1 is between 5 μ ι η and 20 μ ι η, inclusive.
4. The display panel of claim 2, wherein the first barrier dam further comprises:
the first side surface is intersected with the first bottom surface and is close to one side of the second pixel unit;
the second side surface is intersected with the first bottom surface and is close to one side of the high light transmittance area;
in the thickness direction of the display panel, the first side face has a first height H1, and the second side face has a second height H2, wherein the first height H1 is less than or equal to the second height H2.
5. The display panel according to claim 4, further comprising a driving circuit layer, an organic light emitting device layer, and an encapsulation layer;
the packaging layer comprises a first inorganic packaging layer, an organic packaging layer and a second inorganic packaging layer which are arranged in sequence;
in the thickness direction of the display panel, the driving circuit layer has a first thickness h1, the organic light emitting device layer has a second thickness h2, the first inorganic encapsulation layer has a third thickness h3, and the organic encapsulation layer has a fourth thickness h 4; wherein, satisfy: the second height H2 is more than or equal to the first thickness H1+ the second thickness H2+ the third thickness H3+ the fourth thickness H4.
6. The display panel of claim 5, wherein the second height H2 is between 2 μm and 12 μm, inclusive.
7. The display panel according to claim 4, wherein the first side surface is disposed obliquely with respect to the first bottom surface, and an included angle between the first side surface and the first bottom surface is an obtuse angle; the second side surface is obliquely arranged relative to the first bottom surface, and an included angle between the second side surface and the first bottom surface is an obtuse angle.
8. The display panel according to claim 4, wherein the first side surface is disposed obliquely with respect to the first bottom surface, and an included angle between the first side surface and the first bottom surface is an acute angle; the second side surface is obliquely arranged relative to the first bottom surface, and an included angle between the second side surface and the first bottom surface is an obtuse angle.
9. The display panel according to claim 5, wherein the driving circuit layer includes a first driving circuit region and a second driving circuit region;
the first driving circuit area is used for driving the first pixel unit, and the second driving circuit area is used for driving the second pixel unit;
the first driving circuit area and the second driving circuit area are located in the first display area.
10. The display panel according to any one of claims 1 to 9,
the first barrier dam is made of transparent negative photoresist material.
11. The display panel of claim 1, wherein the first barrier dam is disposed around the high transmittance region along an edge profile of the high transmittance region; wherein, the edge profile of the high light transmittance area is arc-shaped.
12. The display panel of claim 1, wherein the first metal layer is a cathode metal layer;
in the second display area, the cathode metal layer is patterned to form a plurality of cathode metal blocks and cathode wires connected with the cathode metal blocks;
the first barrier dam is disposed around the second pixel unit along an edge contour of the cathode metal block.
13. The display panel of claim 12, wherein the edge profile of the cathode trace is substantially any one of a sugarcoated haw-shaped profile, an S-shaped profile, a V-shaped profile, and the like.
14. A display device characterized by comprising the display panel according to any one of claims 1 to 13.
15. A method of manufacturing the display panel according to any one of claims 1 to 13, characterized in that the manufacturing method comprises:
providing a substrate;
preparing a driving circuit layer over the substrate;
preparing an organic light emitting device layer over the driving circuit layer;
preparing an encapsulation layer over the organic light emitting device layer;
the organic light-emitting device layer comprises a cathode metal layer and a cap layer, and the cathode metal layer in the high light transmittance region is removed by laser after the cathode metal layer is prepared and before the cap layer is prepared.
16. The preparation method of claim 15, wherein when the cathode metal layer in the high light transmittance region is removed by using laser, a mask plate is used to shield the cathode metal layer;
the mask plate comprises an opening area, and the opening area is overlapped with the inner side area of the first blocking dam;
the inner side area of the first blocking dam is defined by the side edge of the first blocking dam close to the high light transmittance area.
17. The manufacturing method of claim 16, wherein an area S1 of an opening region of the mask is < an area S2 of an inner region of the first barrier dam.
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