CN210516728U - Display substrate, display panel and display device - Google Patents
Display substrate, display panel and display device Download PDFInfo
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- CN210516728U CN210516728U CN201921861645.9U CN201921861645U CN210516728U CN 210516728 U CN210516728 U CN 210516728U CN 201921861645 U CN201921861645 U CN 201921861645U CN 210516728 U CN210516728 U CN 210516728U
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Abstract
The application provides a display substrate, a display panel and a display device. The display substrate comprises a first display area and a second display area, and the light transmittance of the first display area is greater than that of the second display area. The first display area is provided with a plurality of sub-pixel groups, each sub-pixel group comprises at least one sub-pixel, and each sub-pixel comprises a first electrode, a light-emitting structure positioned on the first electrode and a second electrode positioned on the light-emitting structure. The first electrode of at least one sub-pixel group is electrically connected with the corresponding pixel circuit through a first connecting part, the pixel circuit electrically connected with the first connecting part comprises an oxide semiconductor transistor, the oxide semiconductor transistor comprises an active layer, and the active layer comprises a first area, and a second area and a third area which are positioned on two sides of the first area. The active layer and the first connecting portion are arranged on the same layer, the first connecting portion is connected with the third region, the first region is made of oxide semiconductor materials, and the second region, the third region and the first connecting portion are made of oxide semiconductor materials after conducting treatment.
Description
Technical Field
The application relates to the technical field of display, in particular to a display substrate, a display panel and a display device.
Background
With the rapid development of electronic devices, the requirements of users on screen occupation ratio are higher and higher, so that the comprehensive screen display of the electronic devices is concerned more and more in the industry. Traditional electronic equipment such as cell-phone, panel computer etc. owing to need integrate such as leading camera, earphone and infrared sensing element etc. so the accessible is slotted (Notch) on the display screen, sets up camera, earphone and infrared sensing element etc. in the fluting region, but the fluting region can not be used for the display screen, like the bang screen among the prior art, or adopts the mode of trompil on the screen, to the electronic equipment who realizes the function of making a video recording, external light accessible screen on trompil department get into the photosensitive element who is located the screen below. However, these electronic devices are not all full-screen in the true sense, and cannot display in each area of the whole screen, for example, the camera area cannot display the picture.
SUMMERY OF THE UTILITY MODEL
According to a first aspect of embodiments of the present application, there is provided a display substrate, the display substrate including a first display region and a second display region, a light transmittance of the first display region being greater than a light transmittance of the second display region;
a plurality of sub-pixel groups are arranged in the first display area, each sub-pixel group comprises at least one sub-pixel, and each sub-pixel comprises a first electrode, a light-emitting structure positioned on the first electrode and a second electrode positioned on the light-emitting structure; the pixel circuit for driving the sub-pixel group is arranged in the second display area;
the first electrode of at least one sub-pixel group is electrically connected with the corresponding pixel circuit through a first connecting part, the pixel circuit comprises an oxide semiconductor transistor, and the oxide semiconductor transistor comprises an active layer;
the active layer and the first connecting portion are arranged on the same layer, the active layer comprises a first area, a second area and a third area, the second area and the third area are located on two sides of the first area, the first connecting portion is connected with the third area of the active layer, the first area is made of oxide semiconductor materials, and the second area, the third area and the first connecting portion are made of oxide semiconductor materials after conducting treatment.
In one embodiment, the first connection portion is located below the first electrode, an insulating layer is disposed between the first electrode and the first connection portion, and the first electrode is electrically connected to the first connection portion through a through hole in the insulating layer. The first connecting portion is arranged below the first electrode, the size and the position of the first electrode cannot be influenced by the arrangement of the first connecting portion, the size of the first electrode can be made larger, and the display area of the sub-pixels in the first display area is increased.
And/or the presence of a gas in the gas,
the oxide semiconductor transistor further includes a gate electrode, a source electrode, and a drain electrode, the source electrode being electrically connected to the second region, and the drain electrode being electrically connected to the third region.
In one embodiment, in the first display region, the first electrode of at least one sub-pixel group is connected to the corresponding pixel circuit through a second connection portion, and the second connection portion and the first connection portion are located at different layers. The first connecting portion and the second connecting portion are arranged on different layers, the wiring mode of the first connecting portion cannot be affected by the arrangement of the second connecting portion, the total number of the second connecting portion of the first connecting portion is large, and since the total number of the first connecting portion and the second connecting portion is the same as that of the sub-pixel groups, more sub-pixel groups can be arranged in the first display area, and the display effect of the first display area is improved.
In one embodiment, the second connection portion is at least partially in the same layer as the first electrode. The second connecting part and the first electrode can be formed in the same process step when the materials of the second connecting part and the first electrode are the same, which is beneficial to simplifying the process steps.
In one embodiment, the first display area comprises a first side and a second side opposite to the first side, and the pixel circuits correspondingly connected with the sub-pixel groups are distributed in the area of the second display area adjacent to the first side and the area of the second display area adjacent to the second side;
the sub-pixel group adjacent to the first side and/or the sub-pixel group adjacent to the second side in the first display area are connected with the corresponding pixel circuit through the second connecting portion. The sub-pixel group adjacent to the first side or the second side is electrically connected with the corresponding pixel circuit through the second connecting part, so that the situation that the arrangement of the first electrode is influenced by the wiring mode of the second connecting part due to the longer length of the second connecting part can be avoided.
In one embodiment, the second connection portion includes a first portion located in the first display region and a second portion located in the second display region, and the materials of the first portion and the first electrode include indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, or silver-doped indium zinc oxide; and/or the presence of a gas in the gas,
the material of the second electrode comprises magnesium silver, or aluminum, or molybdenum, or titanium nitride, or nickel, or aluminum zinc oxide, or aluminum titanium oxide.
The arrangement enables the light transmittance of the first display area to be large, and the light transmittance of the first display area meets the lighting requirement of the optical device arranged below the first display area.
In one embodiment, when the sub-pixel group includes two or more sub-pixels, the first electrodes of the sub-pixels in the sub-pixel group are electrically connected in sequence, and the first electrode of the sub-pixel closest to the second display region in the sub-pixel group is electrically connected to the pixel circuit corresponding to the sub-pixel group. By the arrangement, the length of the first connecting part or the second connecting part between the first electrode of the sub-pixel group and the pixel circuit can be reduced, the transparency of the first display area is improved, and the diffraction intensity generated when external light passes through the first display area is reduced.
In one embodiment, the display substrate includes a substrate, the sub-pixels being located on the substrate;
the projection of the first electrode on the substrate is composed of a first graphic unit or a plurality of first graphic units; the first graphic unit comprises a circle, an ellipse, a dumbbell, a gourd or a rectangle; and/or the presence of a gas in the gas,
the projection of the light-emitting structure on the substrate is composed of a second graphic unit or a plurality of second graphic units; the second graphical unit comprises a circle, an ellipse, a dumbbell, a gourd or a rectangle. When the first graphic unit or the second graphic unit is in a circular shape, an oval shape, a dumbbell shape or a gourd shape, the periodic structure generated by diffraction can be changed by the shape, namely, the distribution of a diffraction field is changed, so that the diffraction effect generated when external incident light passes through the first display area is weakened.
According to a second aspect of the embodiments of the present application, a display panel is provided, where the display panel includes the display substrate and the package structure described above;
the packaging structure comprises a polaroid, wherein the polaroid covers the second display area and does not cover the first display area, or the polaroid covers the first display area and the second display area.
According to a third aspect of embodiments of the present application, there is provided a display device including:
a housing having a device region;
the display panel is covered on the shell;
wherein the device region is located below the first display region, and an electronic element is disposed in the device region.
According to the display substrate, the display panel and the display device, the light transmittance of the first display area is larger than that of the second display area, the optical device can be arranged below the first display area, and full-screen display of the display substrate is achieved on the premise that normal work of the optical device is guaranteed. The pixel circuit that the sub-pixel group in the first display area corresponds sets up in the second display area, can improve the luminousness of first display area, reduces the structural complexity of first display area, and then weakens the intensity of the diffraction effect that outside light produced when passing through first display area, improves the imaging quality of the camera that first display area below set up. The first electrode of at least one sub-pixel group is electrically connected with the corresponding pixel circuit through the first connecting part, the first connecting part and the second area and the third area of the oxide semiconductor transistor in the pixel circuit are positioned on the same layer, and the materials are the same, so that the first connecting part, the second area and the third area can be formed simultaneously.
Drawings
Fig. 1 is a top view of a display substrate according to an embodiment of the present disclosure;
fig. 2 is a partial schematic view of an arrangement of sub-pixel groups in a first display area of a display substrate according to an embodiment of the present disclosure;
fig. 3 is a partial cross-sectional view of a display substrate provided in an embodiment of the present application;
fig. 4 is a partial cross-sectional view of a display substrate provided in an embodiment of the present application;
fig. 5 is a schematic projection diagram of a first electrode of a subpixel group in a first display area of a display substrate on a substrate according to an embodiment of the present application;
fig. 6 is another schematic projection diagram of a first electrode of a subpixel group in a first display area of a display substrate on a substrate according to an embodiment of the present disclosure;
fig. 7 is a schematic projection view of a first electrode of a subpixel group in a first display area of a display substrate on a substrate according to an embodiment of the present application;
fig. 8 is a top view of a housing of a display device provided in an embodiment of the present application.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus consistent with certain aspects of the present application, as detailed in the appended claims.
On intelligent electronic equipment such as a mobile phone and a tablet computer, because optical devices such as a front camera and a light sensor need to be integrated, the optical devices are generally arranged below a transparent display area in a manner of arranging the transparent display area on the electronic equipment, and full-screen display of the electronic equipment is realized under the condition of ensuring normal work of the optical devices.
In order to reduce the structural complexity of the transparent display region and reduce the diffraction intensity generated when external ambient light passes through the transparent display region, pixel circuits for driving the sub-pixels of the transparent display region may be disposed in the non-transparent display region, and a lead line may be disposed to electrically connect the anodes of the sub-pixels with the corresponding pixel circuits. However, the preparation of the lead leads causes a complicated transparent preparation process and an increase in cost.
In order to solve the above problems, embodiments of the present application provide a display substrate, a display panel and a display device, which can solve the above problems well.
The display substrate, the display panel, and the display device in the embodiments of the present application will be described in detail below with reference to the accompanying drawings. The features of the following examples and embodiments can be supplemented or combined with each other without conflict.
Fig. 1 is a top view of a display substrate according to an embodiment of the present disclosure; fig. 2 is a partial schematic view of an arrangement of sub-pixel groups in a first display area of a display substrate according to an embodiment of the present disclosure; fig. 3 is a partial cross-sectional view of a display substrate provided in an embodiment of the present application; fig. 4 is a partial cross-sectional view of a display substrate provided in an embodiment of the present application; fig. 5 is a schematic projection diagram of a first electrode of a subpixel group in a first display area of a display substrate on a substrate according to an embodiment of the present application; fig. 6 is another schematic projection diagram of a first electrode of a subpixel group in a first display area of a display substrate on a substrate according to an embodiment of the present disclosure; fig. 7 is a schematic projection view of a first electrode of a subpixel group in a first display area of a display substrate on a substrate according to an embodiment of the present application; fig. 8 is a top view of a housing of a display device provided in an embodiment of the present application.
The embodiment of the application provides a display substrate. Referring to fig. 1, the display substrate includes a first display region 10 and a second display region 20, and a light transmittance of the first display region 10 is greater than a light transmittance of the second display region 20.
Referring to fig. 2, a plurality of sub-pixel groups 11, 12, and 13 are disposed in the first display region 10, and the sub-pixel groups 11, 12, and 13 include at least one sub-pixel 111, 112, and 113. Each sub-pixel comprises a first electrode, a light-emitting structure positioned on the first electrode and a second electrode positioned on the light-emitting structure.
Referring to fig. 3, pixel circuits for driving the sub-pixel groups 11, 12, 13 are disposed in the second display region 20. One first electrode 101 of at least one of the sub-pixel groups 11, 12, 13 is electrically connected to the corresponding pixel circuit through a first connection portion 102. The pixel circuit connected to the first connection portion 102 includes an oxide semiconductor transistor 21, and the oxide semiconductor transistor 21 includes an active layer 214. The active layer 214 of the oxide semiconductor transistor 21 includes a first region 201 and second and third regions 202 and 203 located on both sides of the first region 201.
The active layer 214 of the oxide semiconductor transistor 21 is disposed on the same layer as the first connection portion 102, the first connection portion 102 is connected to the third region 203, the first region 201 is made of an oxide semiconductor material, and the second region 202, the third region 203, and the first connection portion 102 are made of a conductive oxide semiconductor material.
Since the active layer 214 of the oxide semiconductor transistor 21 is located at the same layer as the first connection portion 102, and the materials of the second region 202, the third region 203 and the first connection portion 102 are the same, the second region 202, the third region 203 and the first connection portion 102 can be formed at the same time. Specifically, the oxide semiconductor layer may be formed first, and then the positions of the oxide semiconductor layer corresponding to the second region 202, the third region 203 and the first connection portion 102 are subjected to a conductive treatment, so that the second region 202, the third region 203 and the first connection portion 102 are obtained. The first region 201 of the active layer 214 is obtained without performing the electrical conduction treatment on the oxide semiconductor layer at a position corresponding to the first region 201.
In the display substrate provided in the embodiment of the present application, the light transmittance of the first display area 10 is greater than the light transmittance of the second display area 20, so that the optical device can be disposed below the first display area 10, and the display of the display substrate 100 can be achieved on the premise of ensuring the normal operation of the optical device. The pixel circuits corresponding to the sub-pixel groups 11, 12 and 13 in the first display area 10 are arranged in the second display area 20, so that the light transmittance of the first display area 10 can be improved, the structural complexity of the first display area 10 is reduced, the intensity of the diffraction effect generated when external light passes through the first display area 10 is weakened, and the imaging quality of the camera arranged below the first display area 10 is improved. The first electrode 101 of at least one sub-pixel group is electrically connected to the corresponding pixel circuit through the first connection portion 102, the first connection portion 102 and the second region 202 and the third region 203 of the oxide semiconductor transistor in the pixel circuit are located in the same layer and have the same material, so that the first connection portion 102, the second region 202 and the third region 203 can be formed at the same time, and compared with the scheme of separately preparing the first connection portion 102, the process for preparing the first connection portion can be reduced, and the cost can be reduced.
In one embodiment, referring again to fig. 2, the display substrate 100 further includes a substrate 31, a buffer layer 32 on the substrate 31, a first insulating layer 33 on the buffer layer 32, a second insulating layer 34 on the first insulating layer 33, a third insulating layer 35 on the second insulating layer 34, a fourth insulating layer 36 on the third insulating layer 35, and a fifth insulating layer 37 on the fourth insulating layer 36.
The oxide semiconductor transistor 21 further includes a gate electrode 211, a source electrode 212, and a drain electrode 213, the source electrode 212 being electrically connected to the second region 202, and the drain electrode 213 being electrically connected to the third region 203.
The active layer 214 and the first connection portion 102 of the oxide semiconductor transistor 21 may be located between the second insulating layer 34 and the third insulating layer 35, the gate electrode 211 of the oxide semiconductor transistor 21 is located between the third insulating layer 35 and the fourth insulating layer 36, and the gate electrode 211 corresponds to the position of the first region 201. In manufacturing the oxide semiconductor transistor 21, after the second insulating layer 34 is formed, an oxide semiconductor layer may be formed on the second insulating layer 34 such that a portion of the oxide semiconductor layer is located in the first display region 10 and another portion of the oxide semiconductor layer is located in the second display region 20. After that, a third insulating layer 35 is formed on the oxide semiconductor layer, and a gate electrode 211 is formed on the third insulating layer 35. Then, the oxide semiconductor layer is subjected to a conductive treatment. In the process of conducting treatment, the gate electrode 211 is used as a shield of the first region 201, and conducting treatment is performed only on the second region 202, the third region 203 and the corresponding positions of the first connection portion 102, so as to obtain the active layer 214 and the first connection portion 102. The source electrode 212 and the drain electrode 213 are positioned above the active layer 214, and the source electrode 212 and the drain electrode 213 penetrate the third insulating layer 35, the fourth insulating layer 36, and the fifth insulating layer 37.
In one embodiment, the oxide semiconductor material may be conductively treated using a plasma (plasma) process or an ion implantation process.
In one embodiment, the pixel circuits corresponding to the sub-pixel groups 11, 12, 13 may include low temperature polysilicon transistors 22. The low temperature polysilicon transistor 22 includes an active layer 224, a gate electrode 221, a source electrode 222, and a drain electrode 223. The active layer 224 is positioned between the first insulating layer 33 and the second insulating layer 34, the gate electrode 221 is positioned between the buffer layer 32 and the second insulating layer 34, and the source electrode 222 and the drain electrode 223 penetrate the first insulating layer 33, the second insulating layer 34, and the third insulating layer 35. The active layer 224 includes a fourth region 204 and fifth and sixth regions 205 and 206 located at two sides of the fourth region 204. The source electrode 222 is electrically connected to the fifth region 205, and the drain electrode 223 is electrically connected to the sixth region 206.
In one embodiment, the pixel circuits used to drive the subpixel groups 11, 12, 13 may be 1T circuits, or 2T1C circuits, or 3T1C circuits, or 7T1C circuits, or 7T2C circuits. Where T represents a transistor and C represents a storage capacitor. The 1T circuit means that the pixel circuit includes only one transistor and does not include a capacitor. The types of pixel circuits corresponding to different sub-pixel groups 11, 12, 13 may be the same.
In one embodiment, the first connection portion 102 is located below the first electrode 101, an insulating layer is disposed between the first connection portion 102 and the first electrode 101, and the first electrode 101 is electrically connected to the first connection portion 102 through a through hole in the insulating layer. The first connection portion 102 is disposed below the first electrode 101, and the size and the position of the first electrode 101 are not affected by the disposition of the first connection portion 102, so that the size of the first electrode 101 can be made larger, which is helpful for increasing the display area of the sub-pixels in the first display region 10. Referring to fig. 3, the insulating layer between the first connection portion 102 and the first electrode 101 includes a third insulating layer 35, a fourth insulating layer 36, and a fifth insulating layer 37.
In one embodiment, referring to fig. 4, in the first display region 10, the first electrode 101 of at least one sub-pixel group 11, 12, 13 is connected to the corresponding pixel circuit through a second connection portion 103, and the second connection portion 103 and the first connection portion 102 are located at different layers. By arranging the first connecting portion 102 and the second connecting portion 103 to be located at different layers, the arrangement of the second connecting portion 103 does not affect the routing manner of the first connecting portion 102, so that the total number of the first connecting portion 102 and the second connecting portion 103 is larger, and since the total number of the first connecting portion 102 and the second connecting portion 103 is the same as the total number of the sub-pixel groups, more sub-pixel groups can be arranged in the first display area 10, which is beneficial to improving the display effect of the first display area 10.
In one embodiment, the second connection portion 103 is at least partially in the same layer as the first electrode 101. That is, the second connection portion 103 is partially located at the same layer as the first electrode 101, or the second connection portion 103 is entirely located at the same layer as the first electrode 101.
Referring to fig. 4, the first electrode 101 is electrically connected to the drain electrode 223 of the low temperature polysilicon transistor 22 through a second connection portion 103, and the second connection portion 103 includes a first portion 1031 and a second portion 1032, wherein the first portion 1031 is located at the same layer as the first electrode 101. Through holes are formed in the fourth insulating layer 36 and the fifth insulating layer 37 between the first electrode 101 and the drain electrode 223, and the second portion 1032 is filled in the through holes. The first portion 1031 and the second portion 1032 may be the same material, and the first portion 1031 and the second portion 1032 may be formed in the same process step. In other embodiments, when the first electrode 101 is electrically connected to the oxide semiconductor transistor through the second connection portion 103, the second connection portion 103 may be located at the same layer as the first electrode 101.
The material of the second connection portion 103 is the same as that of the first electrode 101, and the second connection portion 103 and the first electrode 101 can be formed in the same process step, which helps to simplify the process steps.
In one embodiment, referring again to fig. 2, the first display region 10 includes a first side 141 and a second side 142 opposite to the first side 141. The pixel circuits correspondingly connected to the sub-pixel groups are distributed in the area of the second display area 20 adjacent to the first side 141 and the area of the second display area 20 adjacent to the second side 142. The sub-pixel group adjacent to the first side 141 and/or the sub-pixel group adjacent to the second side 142 in the first display region 10 are connected to the corresponding pixel circuit through the second connection portion 103.
The distance between the sub-pixel group adjacent to the first side 141 in the first display region 10 and the first side 141 is smaller than the distance between the other sub-pixel groups and the first side 141. The distance between the sub-pixel group adjacent to the second side 142 in the first display area 10 and the second side 142 is smaller than the distance between the other sub-pixel groups and the second side 142. The number of sub-pixel groups adjacent to the first side 141 in the first display area 10 may be one or two, and the number of sub-pixel groups adjacent to the second side 142 in the first display area 10 may be one or two.
Thus, the sub-pixel group adjacent to the first side 141 or the second side 142 is electrically connected to the corresponding pixel circuit through the second connection portion 103, so that the problem that the routing manner of the second connection portion affects the arrangement of the first electrode due to the long length of the second connection portion 103 can be avoided.
In one embodiment, the second connection portion 103 includes a first portion located in the first display region 10 and a second portion located in the second display region 20, and the first portion and the first electrode 101 are made of transparent materials. Further, the transparent material has a light transmittance of 70% or more. Preferably, the light transmittance of the transparent material is greater than or equal to 90%, for example, the light transmittance of the transparent material may be 90%, 95%, or the like. The arrangement enables the light transmittance of the first display area 10 to be large, and further enables the light transmittance of the first display area 10 to meet the lighting requirement of the optical device arranged below the first display area. The material of the second portion of the second connecting portion may be the same as or different from the material of the first portion, for example, the material of the second portion is an opaque metal material.
The material of the first portion and the first electrode 101 may include indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, or silver-doped indium zinc oxide. Thus, the light transmittance of the first portion and the first electrode 101 can be made higher. When the materials of the first portion and the first electrode 101 are indium tin oxide doped with silver or indium zinc oxide doped with silver, the resistance of the second connecting portion, the first electrode and/or the second electrode can be reduced on the basis of ensuring high light transmittance of the transparent display substrate.
In one embodiment, the material of the second electrode may include magnesium silver, or aluminum, or molybdenum, or titanium nitride, or nickel, or aluminum zinc oxide, or aluminum titanium oxide, which has a certain transparency and is thin in thickness.
In one embodiment, when the sub-pixel group includes two or more sub-pixels, the first electrodes of the sub-pixels in the sub-pixel group are electrically connected in sequence. And one first electrode in the sub-pixel group is electrically connected with the corresponding pixel circuit, so that the pixel circuit can drive each sub-pixel in the sub-pixel group, and the control on the sub-pixels is facilitated to be simplified.
In one embodiment, when the sub-pixel group includes two or more sub-pixels, the first electrode 101 of the sub-pixel closest to the second display area 20 in the sub-pixel group is electrically connected to the pixel circuit corresponding to the sub-pixel group. With this configuration, the length of the first connection portion 102 or the second connection portion 103 between the first electrode 101 of the sub-pixel group and the pixel circuit can be reduced, which is helpful for improving the transparency of the first display region 10 and reducing the diffraction intensity generated when external light passes through the first display region 10.
In one embodiment, the projection of the first electrode on the substrate is made up of one first pattern element or a plurality of first pattern elements. The first graphic unit comprises a circle, an ellipse, a dumbbell, a gourd or a rectangle.
Referring to fig. 5, the sub-pixel group includes four sub-pixels, and the first electrode 101 of the sub-pixel is composed of a first graphic unit, which is circular. Referring to fig. 6, the sub-pixel group includes four sub-pixels, and the first electrode 101 of the sub-pixel is composed of a first graphic unit, and the first graphic unit is dumbbell-shaped. Referring to fig. 7, the sub-pixel group includes four sub-pixels, and the projection of the first electrode 101 of the sub-pixel on the substrate is composed of a first graphic unit, and the first graphic unit is an ellipse. When the first pattern unit has a circular, oval, dumbbell, or gourd shape, the above shape may change a periodic structure generated by diffraction, i.e., change distribution of a diffraction field, thereby weakening a diffraction effect generated when external incident light passes through the first display region 10. And when the first image unit is in a circular shape, an oval shape, a dumbbell shape or a gourd shape, the distance between the first electrodes of the adjacent sub-pixel groups changes continuously or discontinuously, so that the positions of the first electrodes of the adjacent sub-pixel groups where diffraction occurs are different, diffraction effects at different positions are mutually offset, the diffraction effects are weakened, and the image photographed by the camera arranged below the first display area has high definition.
In one embodiment, the projection of the light emitting structure on the substrate is composed of one second pattern unit or a plurality of second pattern units, and the second pattern unit comprises a circle, an ellipse, a dumbbell, a gourd or a rectangle. When the second pattern unit has a circular, oval, dumbbell, or gourd shape, the above shape may change a periodic structure generated by diffraction, i.e., change distribution of a diffraction field, thereby weakening a diffraction effect generated when external incident light passes through the first display region 10. And when the second image unit is in a circular shape, an oval shape, a dumbbell shape or a gourd shape, the distance between the light-emitting structures of the adjacent sub-pixel groups changes continuously or discontinuously, so that the positions of the light-emitting structures of the adjacent sub-pixel groups, which generate diffraction, are different, and the diffraction effects at different positions are mutually offset, so that the diffraction effect can be effectively weakened, and the image photographed by the camera arranged below the first display area has higher definition.
In one embodiment, the projection of the first electrode 101 of the sub-pixel on the substrate corresponds to the first graphic element, and the projection of the reflective structure of the sub-pixel on the substrate corresponds to the second graphic element may be the same or different. When the first graphic unit is different from the second graphic unit, the projection of the first electrode 101 on the substrate is different from the projection of the light-emitting structure on the substrate, so as to further reduce the diffraction effect generated when light passes through the first display region 10.
In one embodiment, the first electrode may be an anode, the second electrode may be a cathode, and the second electrode of each sub-pixel in the first display region 10 may be a planar electrode connected in one piece.
The first display region 10 of the display substrate 100 provided in the embodiment of the present application may have a drop shape, a circular shape, a rectangular shape, a semicircular shape, a semi-elliptical shape, or an elliptical shape. But not limited thereto, the first display area 10 may be designed in other shapes according to actual situations.
The embodiment of the application also provides a display panel, which comprises the display substrate and the packaging structure in any embodiment. The encapsulation structure is located on a side of the display substrate 100 facing away from the substrate.
The package structure includes a polarizer, and the polarizer covers the second display region 20 and does not cover the first display region 10, or the polarizer covers the first display region 10 and the second display region 20. The polaroid can dissipate the reflected light on the surface of the display panel, and the use experience of a user is improved. When the first display region 10 is not provided with a polarizer, the light transmittance of the first display region 10 can be improved, and the normal operation of the optical device arranged below the first display region 10 is ensured.
In one embodiment, the first display area 10 is at least partially surrounded by the second display area 20. The first display area 10 is partially surrounded by the second display area 20 as shown in fig. 1, and in other embodiments, the first display area 10 may be completely surrounded by the second display area 20.
In one embodiment, the package structure may further include an encapsulation layer, a glass cover plate, a touch layer, and the like. The encapsulation layer may be a thin film encapsulation layer or a glass frit encapsulation layer.
The embodiment of the application also provides a display device which comprises a shell and the display panel. Referring to fig. 8, a case 310 has a device region 320, and a display panel is covered on the case 310. Wherein the device region 310 is located below the first display region 10, and electronic elements are disposed in the device region 320.
The electronic component may include an earpiece, an optical device, a distance sensor, and/or the like, wherein the optical device includes at least one of a front-facing camera, an infrared sensor, an infrared lens, a flood sensing component, an ambient light sensor, and a dot matrix projector.
The device area of the housing may be a slotted area, and the first display area of the display panel may be disposed corresponding to the slotted area, so that the optical device can emit or collect light through the first display area 10.
The display device can be a digital device such as a mobile phone, a tablet, a palm computer, an ipod and the like.
It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.
In this application, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "plurality" means two or more unless expressly limited otherwise.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (10)
1. The display substrate is characterized by comprising a first display area and a second display area, wherein the light transmittance of the first display area is greater than that of the second display area;
a plurality of sub-pixel groups are arranged in the first display area, each sub-pixel group comprises at least one sub-pixel, and each sub-pixel comprises a first electrode, a light-emitting structure positioned on the first electrode and a second electrode positioned on the light-emitting structure; the pixel circuit for driving the sub-pixel group is arranged in the second display area;
the first electrode of at least one sub-pixel group is electrically connected with the corresponding pixel circuit through a first connecting part, the pixel circuit comprises an oxide semiconductor transistor, and the oxide semiconductor transistor comprises an active layer;
the active layer and the first connecting portion are arranged on the same layer, the active layer comprises a first area, a second area and a third area, the second area and the third area are located on two sides of the first area, the first connecting portion is connected with the third area of the active layer, the first area is made of oxide semiconductor materials, and the second area, the third area and the first connecting portion are made of oxide semiconductor materials after conducting treatment.
2. The display substrate according to claim 1, wherein the first connection portion is located below the first electrode, an insulating layer is disposed between the first electrode and the first connection portion, and the first electrode is electrically connected to the first connection portion through a through hole in the insulating layer; and/or the presence of a gas in the gas,
the oxide semiconductor transistor further includes a gate electrode, a source electrode, and a drain electrode, the source electrode being electrically connected to the second region, and the drain electrode being electrically connected to the third region.
3. The display substrate according to claim 1, wherein in the first display region, the first electrode of at least one sub-pixel group is connected to the corresponding pixel circuit through a second connection portion, and the second connection portion and the first connection portion are located at different layers.
4. A display substrate according to claim 3, wherein the second connection portion is at least partially in the same layer as the first electrode.
5. The display substrate according to claim 3, wherein the first display region comprises a first side and a second side opposite to the first side, and the pixel circuits connected to the sub-pixel groups are distributed in a region of the second display region adjacent to the first side and a region of the second display region adjacent to the second side;
the sub-pixel group adjacent to the first side and/or the sub-pixel group adjacent to the second side in the first display area are connected with the corresponding pixel circuit through the second connecting portion.
6. The display substrate according to claim 3, wherein the second connection portion comprises a first portion in the first display region and a second portion in the second display region, and wherein the first portion and the first electrode are made of indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, or silver-doped indium zinc oxide; and/or the presence of a gas in the gas,
the material of the second electrode comprises magnesium silver, or aluminum, or molybdenum, or titanium nitride, or nickel, or aluminum zinc oxide, or aluminum titanium oxide.
7. The display substrate according to claim 1, wherein when the sub-pixel group includes two or more sub-pixels, the first electrodes of the sub-pixels in the sub-pixel group are electrically connected in sequence, and the first electrode of the sub-pixel closest to the second display region in the sub-pixel group is electrically connected to the pixel circuit corresponding to the sub-pixel group.
8. The display substrate of claim 1, wherein the display substrate comprises a substrate, and the sub-pixels are located on the substrate;
the projection of the first electrode on the substrate is composed of a first graphic unit or a plurality of first graphic units; the first graphic unit comprises a circle, an ellipse, a dumbbell, a gourd or a rectangle; and/or the presence of a gas in the gas,
the projection of the light-emitting structure on the substrate is composed of a second graphic unit or a plurality of second graphic units; the second graphical unit comprises a circle, an ellipse, a dumbbell, a gourd or a rectangle.
9. A display panel, comprising the display substrate and the package structure of any one of claims 1 to 8;
the packaging structure comprises a polaroid, wherein the polaroid covers the second display area and does not cover the first display area, or the polaroid covers the first display area and the second display area.
10. A display device, comprising:
a housing having a device region;
the display panel of claim 9, overlaid on the housing;
wherein the device region is located below the first display region, and an electronic element is disposed in the device region.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111725287A (en) * | 2020-06-30 | 2020-09-29 | 武汉天马微电子有限公司 | Display panel, display device and manufacturing method of display panel |
CN112331703A (en) * | 2020-09-24 | 2021-02-05 | 武汉天马微电子有限公司 | Display panel and display device |
WO2024062570A1 (en) * | 2022-09-21 | 2024-03-28 | シャープディスプレイテクノロジー株式会社 | Display device |
-
2019
- 2019-10-31 CN CN201921861645.9U patent/CN210516728U/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111725287A (en) * | 2020-06-30 | 2020-09-29 | 武汉天马微电子有限公司 | Display panel, display device and manufacturing method of display panel |
CN112331703A (en) * | 2020-09-24 | 2021-02-05 | 武汉天马微电子有限公司 | Display panel and display device |
WO2024062570A1 (en) * | 2022-09-21 | 2024-03-28 | シャープディスプレイテクノロジー株式会社 | Display device |
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