CN204391161U - Pixel structure and display device - Google Patents

Abstract

Disclosed are a pixel structure and a display device. A pixel structure, comprising: a first insulating layer; a light emitting unit disposed on the first insulating layer and including a first electrode layer, a light emitting layer and a second electrode layer; a pixel defining layer configured to define a pixel opening , the light emitting unit is disposed in the pixel opening; and a reflection component is disposed around the pixel defining layer, so as to reflect the light incident from the light emitting layer into the pixel defining layer into the pixel structure The exit surface shoots out. By setting the reflective component, the light incident on the pixel defining layer from the light-emitting layer is reflected to be emitted from the exit surface of the pixel structure, so that the light beam incident on the pixel defining layer can be converted into an effective light beam of the pixel structure , improve the display effect and reduce light consumption.

Description

Pixel structure and display device

technical field

Embodiments of the present invention relate to a display device, in particular to a pixel structure and a display device having such a pixel structure.

Background technique

At present, as a kind of organic thin film electroluminescent device, organic light emitting diode (Organic Light Emitting Diode, OLED) unit and active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode, AMOLED) unit, because of good shock resistance, wide viewing angle , wide operating temperature, high contrast ratio, flexible display, etc., have been widely used in display devices. Generally, a pixel structure includes a pixel definition layer (PDL) for defining a pixel opening, and an OLED unit disposed in the pixel opening. The OLED unit includes a first electrode layer, a second electrode layer, and an organic light-emitting layer encapsulated between the first electrode layer and the second electrode layer, and the organic light-emitting layer is excited by applying a voltage between the first electrode layer and the second electrode layer emits light, and the emitted light exits the pixel opening.

In the OLED unit, the light emitted from the organic light-emitting layer is totally reflected on the surface of the organic light-emitting layer within a certain incident angle range, and then propagates inside the organic light-emitting layer, thereby generating an optical waveguide mode inside the organic light-emitting layer. At the interface between the edge of the organic light-emitting layer and the pixel-defining layer, since the refractive index of the organic light-emitting layer and the pixel-defining layer are close, within a certain incident angle range, the light beam may break away from the waveguide mode inside the organic light-emitting layer and enter the pixel defining layer. This part of the light beam basically propagates laterally and is roughly perpendicular to the light output direction required for effective display of the pixel structure. Under uncontrolled conditions, this substantially laterally transmitted portion of the light beam is eventually dissipated in the pixel-defining layer.

Utility model content

Embodiments of the present invention provide a pixel structure and a display device having the pixel structure, so as to improve display effect and reduce light consumption.

According to a utility model embodiment of the present invention, a pixel structure is provided, comprising:

first insulating layer;

a light emitting unit, disposed on the first insulating layer, and including a first electrode layer, a light emitting layer and a second electrode layer;

a pixel defining layer configured to define a pixel opening in which the light emitting unit is disposed; and

A reflective component is arranged around the pixel defining layer, so as to reflect the light incident from the light emitting layer into the pixel defining layer to be emitted from the exit surface of the pixel structure.

According to the pixel structure of an embodiment of the present invention, the reflection component includes:

a second insulating layer located on the periphery of the pixel defining layer and disposed on the first insulating layer;

a trench formed between the second insulating layer and the pixel defining layer; and;

A reflective layer is disposed on one side of the groove located on the second insulating layer to reflect the light passing through the pixel defining layer.

According to the pixel structure of an embodiment of the present invention, the bottom of the trench extends into at least a part of the thickness of the first insulating layer.

According to the pixel structure of an embodiment of the present invention, the pixel defining layer covers the outer edge of the first electrode layer.

According to the pixel structure of an embodiment of the present invention, the second insulating layer and the pixel defining layer are formed on the same layer and made of the same material, and the second insulating layer and the pixel defining layer of the same height.

According to the pixel structure of an embodiment of the present invention, the second insulating layer and the pixel defining layer are formed on the same layer and made of the same material, and the height of the second insulating layer is larger than that of the pixel Defines the height of the layer.

According to the pixel structure of an embodiment of the present invention, the reflective layer and the first electrode layer are formed on the same layer and made of the same material.

According to the pixel structure of an embodiment of the present invention, the height of the second insulating layer is greater than the height of the pixel defining layer.

According to the pixel structure of an embodiment of the present invention, the reflection component includes:

a second insulating layer located on the periphery of the pixel defining layer and disposed on the first insulating layer; and

a reflective layer disposed on an inner wall of a side of the second insulating layer facing the pixel defining layer to reflect the light emitted from the pixel defining layer,

Wherein, the outer surface of the pixel defining layer is in contact with the reflective layer.

According to another embodiment of the present invention, a display device is provided, comprising the pixel structure described in any one of the above embodiments.

According to the pixel structure of the above-mentioned embodiments of the present invention and the display device having such a pixel structure, by setting a reflective component, the light incident from the light-emitting layer into the pixel defining layer is reflected to be emitted from the pixel structure In this way, the light beam incident into the pixel defining layer can be converted into an effective light beam of the pixel structure, which improves the display effect and reduces light consumption.

Description of drawings

In order to make the purpose, technical solutions and advantages of the utility model clearer, the utility model will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings, wherein:

FIG. 1 is a schematic cross-sectional view of a pixel structure according to a first exemplary embodiment of the present invention, which shows the principle that a reflective layer reflects light incident from a pixel defining layer;

2a-2d are cross-sectional views showing the operation process of making the pixel structure of the first exemplary embodiment of the present invention;

3 is a schematic cross-sectional view of a pixel structure according to a second exemplary embodiment of the present invention, which shows the principle that the reflective layer reflects light incident from the pixel defining layer;

4a-4c are cross-sectional views showing the operation process of making the pixel structure of the second exemplary embodiment of the present invention;

5 is a schematic cross-sectional view of a pixel structure according to a third exemplary embodiment of the present invention, which shows the principle that the reflective layer reflects light incident from the pixel defining layer;

6a-6d are cross-sectional views showing the operation process of making the pixel structure of the third exemplary embodiment of the present invention;

7 is a schematic cross-sectional view of a pixel structure according to a fourth exemplary embodiment of the present invention, illustrating the principle that the reflective layer reflects light incident from the pixel defining layer; and

8a-8b are cross-sectional views showing a part of the operation process of fabricating the pixel structure of the fourth exemplary embodiment of the present invention.

Detailed ways

The technical solutions of the present utility model will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following descriptions of the embodiments of the utility model with reference to the accompanying drawings are intended to explain the overall utility model concept of the utility model, and should not be construed as a limitation of the utility model.

According to the overall utility model concept of the present utility model, a pixel structure is provided, including: a first insulating layer; a light emitting unit disposed on the first insulating layer, and including a first electrode layer, a light emitting layer and a second electrode layer; a pixel defining layer configured to define a pixel opening in which the light-emitting unit is disposed; and a reflective component disposed around the pixel defining layer to define a pixel incident from the light-emitting layer Light in the layer is reflected to exit the exit face of the pixel structure. In the above pixel structure, by setting the reflective component, the light incident on the pixel defining layer from the light-emitting layer is reflected to be emitted from the exit surface of the pixel structure, so that the light beam incident on the pixel defining layer can be converted Effective light beams formed into pixel structures improve display effects and reduce light consumption.

In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It may be evident, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are shown in diagrammatic form to simplify the drawings.

FIG. 1 is a schematic cross-sectional view of a pixel structure according to a first exemplary embodiment of the present invention, illustrating the principle that a reflective layer reflects light incident from a pixel defining layer. Referring to FIG. 1 , a pixel structure according to an exemplary embodiment of the present invention includes: a first insulating layer 3 ; a light emitting unit; a pixel defining layer 5 and a reflective component. The light emitting unit is disposed on the first insulating layer 3 and includes a first electrode layer 41 , a second electrode layer 43 and a light emitting layer 42 disposed between the first electrode layer 41 and the second electrode layer 43 . The pixel defining layer 5 is configured to define a pixel opening for display, in which the light emitting unit is arranged. The reflective component is arranged around the pixel defining layer 5 to reflect the light 21 incident from the light emitting layer 42 into the pixel defining layer 5 to be emitted from the exit surface of the pixel structure. In various embodiments of the present invention, the technical term "exit surface of the pixel structure" refers to a surface from which light is irradiated to the outside of the pixel structure. FIG. 1 shows the transmission path of the light 21 emitted from the light emitting layer 41 through the pixel defining layer 5 and the reflective layer 63 from the pixel structure. In this way, the light beam incident from the light-emitting layer 42 into the pixel defining layer 5 due to the smaller incident angle can exit from the exit surface of the pixel structure, so that this part of light 21 can be mixed with the main light beam 22 emitted from the display surface of the pixel structure , form a display light beam, improve the display effect of the pixel structure, and reduce light consumption.

Wherein, the first insulating layer 3 may be made of, for example, at least one material among silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiNxOy).

For example, in the light-emitting unit used in OLED display, the first electrode layer can be an anode, and correspondingly, the second electrode layer is a cathode, which is a positive structure at this time; or, the first electrode layer can be a cathode, and correspondingly, The second electrode layer is an anode, which is an inverted structure at this time; the light-emitting layer can be an organic light-emitting layer, and can also include one of an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer according to the needs of improving performance. species or two or more.

In one embodiment, as shown in FIG. 1 , the reflective component includes: a second insulating layer 61 located on the periphery of the pixel defining layer 5 and disposed on the first insulating layer 3 ; formed on the second insulating layer 61 and the pixel defining a trench 62 between the layers 5 ; and a reflective layer 63 disposed on one side of the trench 62 on the second insulating layer 61 to reflect the light 21 passing through the pixel defining layer 5 . Since a part of the light-emitting layer 42 is disposed on the pixel-defining layer 5, and the refractive index of the organic light-emitting layer and the pixel-defining layer is close, the light 21 passing through the pixel-defining layer 5 is incident on the reflective layer 63 from multiple directions, therefore, The reflective surface of the reflective layer 63 is set as an inclined, arc-shaped or parabolic surface, so that the light beam incident on the reflective layer 63 can be emitted from the exit surface of the pixel structure, for example, approximately perpendicular to the exit surface, so as to become an effective display. Beam, improve the display effect. In this way, the outer side walls of the trench 62 surrounding the pixel defining layer 5 are formed in a bowl shape. It can be understood that there is no particular limitation on the shape of the inner wall of the groove 62 (the side wall opposite to the reflective layer), as long as it is ensured that the light 21 transmitted substantially laterally in the pixel defining layer has a relatively small incident angle, so that total reflection does not occur. Can.

In one embodiment, the pixel structure further includes: a substrate 1 made of glass or transparent resin material and a pixel driving unit layer (not shown) disposed on the substrate 1, the first insulating layer 3 is disposed on On the pixel driving unit layer, the first electrode layer 41 is electrically connected to the drain (not shown) of the thin film transistor in the pixel driving unit layer through a via hole (not shown) formed in the first insulating layer 3, The thin film transistor provides a driving signal for the first electrode layer 41 . The first insulating layer 3 may include a passivation layer and/or a planarization layer.

In one embodiment, as shown in FIG. 2 b , the bottom of the trench 62 extends into at least a part of the thickness of the first insulating layer 3 . In this way, one end of the reflective layer 63 can extend into the first insulating layer 3 so as to completely reflect the light 21 from the pixel defining layer 5 .

In one embodiment, the pixel defining layer 5 covers the outer edge of the first electrode layer 41 . In this way, the first electrode layer 41 can be prevented from being electrically broken down, the performance of the light-emitting component can be improved, and the first electrode layer 41 can also be firmly attached to the first insulating layer.

In an exemplary embodiment, referring to FIG. 1, the second insulating layer 61 and the pixel defining layer 5 are formed on the same layer and made of the same material, and the height of the second insulating layer and the pixel defining layer are approximately the same . For example, both the second insulating layer 61 and the pixel defining layer 5 are made of photosensitive organic materials. In this way, the second insulating layer 61 and the pixel defining layer 5 can be formed using the same material through one patterning process, which reduces the number of patterning processes and the number of masks used, thereby simplifying the manufacturing process of the array substrate and reducing the manufacturing cost. cost.

FIG. 3 is a schematic cross-sectional view of a pixel structure according to a second exemplary embodiment of the present invention, illustrating the principle that the reflective layer reflects light incident from the pixel defining layer. The difference between the pixel structure of the second embodiment and the pixel structure of the first embodiment is that the height of the pixel defining layer is different, and the same or similar reference numerals are used for other identical components. Only the pixel defining layer 5' of the pixel structure of the second embodiment will be described below, and other structures are the same or similar to the corresponding structures of the pixel structure of the first embodiment, so detailed descriptions thereof are omitted here.

In the pixel structure of the second exemplary embodiment, as shown in FIGS. ' is greater than the height of the pixel defining layer 5'. In this way, even if the edge of the light-emitting layer 42 of the light-emitting component covers at least a part of the upper part of the pixel defining layer 5', since the height of the second insulating layer 61' is greater than the height of the pixel defining layer 5', the groove 62 The reflective layer 63' in ' is still substantially flush with the light-emitting layer 42 in the thickness direction, so that the reflection layer 63' can enter the light-emitting layer located on the upper part of the pixel defining layer 5' due to the continuation of the waveguide effect in the light-emitting layer and The light 21 incident on the reflective layer 63' can be mixed with the main beam 22 emitted from the display surface of the pixel structure to form a display beam, which improves the display effect of the pixel structure and reduces light consumption.

In the pixel structures of the first and second embodiments, the reflective layer and the first electrode layer can be made of the same material, for example, a three-layer material with indium tin oxide (Indium Tin Oxide, ITO)-silver-ITO, silver or aluminum and other materials, so that both the reflective layer and the first electrode layer have good reflective performance, and at the same time, the first electrode layer realizes the conductive function. In this way, the cost can be reduced and the service life of the reflective layer and the first electrode layer can be increased. In an alternative embodiment, the reflective layer and the first electrode layer can be made of different materials, for example, the reflective layer can be made of insulating material because the reflective layer does not undertake the function of conducting electricity.

Fig. 5 is a schematic cross-sectional view of a pixel structure according to a third exemplary embodiment of the present invention, which shows the principle that the reflective layer reflects light incident from the pixel defining layer. The difference between the pixel structure of the third embodiment and the pixel structure of the first embodiment is that the pixel defining layer and the reflective layer are different, and the same or similar reference numerals are used for other identical components. Only the pixel defining layer 5 ″ and the reflective layer 63 ″ of the pixel structure of the third embodiment will be described below, and other structures are the same or similar to those of the pixel structure of the first embodiment, so detailed descriptions thereof are omitted here.

In the pixel structure of the third exemplary embodiment, as shown in FIG. 6b, the reflective layer 63" and the first electrode layer 41" are formed in the same layer and made of the same material. In this way, the reflective layer 63" and the first electrode layer 41" can be formed using the same material through one patterning process, which reduces the number of patterning processes and the number of masks used, thereby simplifying the manufacturing process of the array substrate and reducing the cost of the array substrate. Production costs. For example, the reflective layer 63" and the first electrode layer 41" can be made of materials such as three-layer material with indium tin oxide (Indium Tin Oxide, ITO)-silver-ITO, silver or aluminum, so that the reflective layer and the first electrode layer The electrode layers all have good reflective properties, and can improve the service life of the reflective layer and the first electrode layer.

In a further embodiment, as shown in Figures 5 and 6c, the height of the second insulating layer 61" is greater than the height of the pixel defining layer 5". In this way, even if the edge of the light-emitting layer 42 of the light-emitting component covers at least a part of the upper part of the pixel defining layer 5", since the height of the second insulating layer 61" is greater than the height of the pixel defining layer 5", it makes the The reflective layer 63" in " is still substantially flush with the light-emitting layer 42" in the thickness direction, so that the reflective layer 63" can reflect and enter the light-emitting layer located on the top of the pixel defining layer 5" due to the continuation of the waveguide effect in the light-emitting layer and the light 21 incident on the reflective layer 63'. Figure 5 shows the transmission path of light 21 emitted from the light emitting layer 41 "through the pixel defining layer 5" and reflective layer 63 "from the pixel structure. This part of light 21 can be mixed with the main light beam 22 emitted from the display surface of the pixel structure , to form a display light beam, improve the display effect of the pixel structure, and reduce light consumption. It can be understood that the materials for making the second insulating layer 61 ″ and the pixel defining layer 5 ″ can be the same or different.

FIG. 7 is a schematic cross-sectional view of a pixel structure according to a fourth exemplary embodiment of the present invention, illustrating the principle that a reflective layer reflects light incident from a pixel defining layer. The difference between the pixel structure of the fourth embodiment and the pixel structure of the third embodiment is that the pixel defining layer is different, and the same or similar reference numerals are used for other identical components. Only the pixel defining layer 53 of the pixel structure of the fourth embodiment will be described below, and other structures are the same or similar to the corresponding structures of the pixel structure of the first embodiment, so a detailed description thereof will be omitted here.

As shown in FIG. 7, the reflective layer 63" is disposed on the inner wall of the second insulating layer 61" facing the side of the pixel defining layer 53 to reflect the light 21 emitted from the pixel defining layer, wherein the pixel defining layer 53 The outer surface is in contact with the reflective layer 63 ″. That is, the pixel defining layer 53 of the pixel structure of the fourth embodiment extends outward to the reflective layer 63 ″, eliminating the groove 62 ″ of the pixel structure of the third embodiment. Like this, can make the reflective layer 63 " that the light passing through the pixel defining layer 53 directly irradiates, avoids refraction from entering the air layer, improves the reflective effect of the reflective layer 63 ". This part of light 21 can be connected with the light from the pixel structure The main beam 22 emitted from the display surface is mixed to form a display beam, which improves the display effect of the pixel structure and reduces light consumption. It can be understood that the materials for making the second insulating layer 61" and the pixel defining layer 53 can be the same or different.

According to a further embodiment of the present invention, a display device is provided, comprising the pixel structure as described in any one of the above embodiments. The display device can be any product or component with a display function such as a display panel, a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and an electronic paper.

According to an embodiment of a further aspect of the present invention, a method for manufacturing a pixel structure is provided. As shown in FIG. 1 , each pixel structure includes a pixel defining layer 5 and a light emitting unit disposed in a pixel opening of the pixel defining layer. The method comprises the steps of:

Forming a first insulating layer 3 on the substrate 1, for example, the first insulating layer may include a passivation layer and/or a planar layer;

Forming the first electrode layer 41 of the light emitting unit on the first insulating layer 3;

forming an insulating film 51 surrounding the first electrode layer 41 on the first insulating layer 3;

forming a reflective component on the insulating film 51;

A light-emitting layer 42 and a second electrode layer 43 are formed on the first electrode layer 41 inside the reflective component, so that the reflective component reflects light incident from the light-emitting layer 42 into the pixel defining layer 5 into The exit face of the structure emits. For example, the light emitting component reflects light incident from the light emitting layer 42 into the pixel defining layer 5 to be emitted in a direction substantially parallel to the emitting direction of the pixel structure. In this way, the light beam incident on the pixel defining layer 5 from the light-emitting layer 42 can exit from the output surface of the pixel structure, thereby improving the display effect of the pixel structure and reducing light consumption.

In one embodiment, the step of forming the reflection component on the insulating film 51 includes:

Forming an annular groove 62 on the insulating film 51 by patterning to separate the insulating film 51 into a second insulating layer 61 on the outside and a pixel defining layer 5 on the inside;

A reflective layer 63 is formed on the outer walls of the trench 62 .

More specifically, FIGS. 2a-2d are cross-sectional views illustrating the operation process of fabricating the pixel structure of the first exemplary embodiment of the present invention. The method for making a pixel structure according to the first embodiment of the present invention includes the following steps:

Same as the general process for making OLED or AMOLED, a pixel driving unit layer (not shown) including thin film transistors is formed on a substrate 1 made of glass or transparent resin;

A first insulating layer 3 is formed on the pixel driving unit layer, for example, the first insulating layer may include a flat layer and/or a passivation layer; in an exemplary embodiment, the first insulating layer 3 may be covered by, for example, An organic film layer made of acrylic or PI (polyimide) material and formed by a patterning process including, for example, exposure, development, and etching processes, or formed by coating a photosensitive organic material and using, for example, a patterning process including exposure and development .

Form the first electrode layer 41 of the light-emitting unit on the first insulating layer 3, for example, the first electrode layer can be used as a reflective electrode;

As shown in Figure 2a, an insulating film 51 surrounding the first electrode layer 41 is formed on the first insulating layer 3, and a pixel opening is formed on the insulating film 51; the material for forming the insulating film can be the same as that used for forming the first insulating layer. of the same material.

As shown in FIG. 2b, a patterning or dry etching process is used to etch a groove 62 in the insulating film around the outer periphery of the pixel opening; in this way, the insulating film 51 is separated by the groove 62 into the pixel defining layer 5 located inside. and the second insulating layer 61 on the outer side; in an exemplary embodiment, the bottom of the trench extends to at least a part of the thickness of the first insulating layer 3; that is, the depth of the trench 62 penetrates the insulating film And terminate in the first insulating layer 3; like this, one end of the reflective layer 63 can extend into the first insulating layer 3, thereby completely reflect the light from the pixel defining layer 5; the slope (or inclination angle) on both sides of the groove 62 ) can be determined according to the direction in which the light in the pixel defining layer is transmitted in a waveguide mode and/or the purpose of reflecting light emitted from the pixel defining layer toward an effective display direction;

As shown in Figure 2c, a reflective layer 63 is formed on the inner wall of the trench 62, for example, a reflective metal layer is formed from materials such as Ag and Al by using a physical vapor deposition process, and patterning, wet etching or dry etching are used to form a reflective layer 63. The process removes the reflective metal layer in other parts, retains the reflective metal layer on the inner wall outside the groove 62, and forms a single-side reflective layer 63;

As shown in Figure 2d, a precision metal mask (Fine Metal Mask, FMM) and an evaporation process are used to deposit an OLED organic film layer to form a light-emitting layer 42; electrode layer 43 .

In this way, through the above steps, a pixel structure with the pixel structure of the embodiment of the present invention can be formed, and the reflective layer 63 formed in the groove 62 can reflect the light propagating laterally in the pixel defining layer 5 into the output surface of the pixel structure. It is emitted to form light that contributes to the display effect, which improves the display effect and reduces light consumption.

In one embodiment, in the step of forming the insulating film 51 surrounding the first electrode layer 41 on the first insulating layer 3 , the insulating film 51 is formed to cover the outer edge of the first electrode layer. In this way, the first electrode layer 41 can be prevented from being electrically broken down, and the performance of the light-emitting component can be improved.

4a-4c are cross-sectional views showing the operation process of fabricating the pixel structure of the second exemplary embodiment of the present invention. The method for making a pixel structure according to the second embodiment of the present invention includes the following steps:

Forming a pixel driving unit layer including thin film transistors on a substrate 1 made of glass or transparent resin;

forming a first insulating layer 3 on the pixel driving unit layer;

Forming the first electrode layer 41 of the light emitting unit on the first insulating layer 3;

As shown in FIG. 4a, an insulating film 51' surrounding the first electrode layer 41 is formed on the first insulating layer 3, and a pixel opening is formed on the insulating film 51'; wherein, an insulating film 51' is formed on the insulating film 51'. Step portion 52, and the height of the inner part is smaller than the height of the outer part;

As shown in Figure 4b, a groove 62' is etched in the insulating film with a smaller height on the outer periphery of the pixel opening; in this way, the insulating film 51' is separated into the pixel defining layer 5' located on the inner side by the groove 62' and the second insulating layer 61' on the outside;

As shown in Figure 4c, a reflective layer 63' is formed on the outer inner wall of the groove 62'. The etching process removes other parts of the reflective metal layer, and retains the reflective metal layer on the inner wall outside the groove 62' to form a single-side reflective layer 63'; after that, the OLED organic film layer is deposited by FMM and evaporation processes, to form the light-emitting layer 42; and then a transparent or semi-transparent and semi-reflective second electrode layer 43 is formed by using an evaporation process.

6a-6d are cross-sectional views showing the operation process of fabricating the pixel structure of the third exemplary embodiment of the present invention. The method for making a pixel structure according to the third embodiment of the present invention includes the following steps:

forming a first insulating layer 3 on the substrate 1;

forming an annular second insulating layer 61" on the first insulating layer 3;

The first electrode layer 41" and the reflective layer 63" are formed by one patterning process, wherein the first electrode layer 41" is formed on the first insulating layer 3, and the reflective layer 63" extends from the first insulating layer 3 to the second insulating layer. layer 61", and the first electrode layer 41" is disconnected from the reflective layer 63";

A pixel defining layer 5" is formed on the outer edge of the first electrode layer 41", and a groove 62" is formed between the outer surface of the pixel defining layer 5" and the inner surface of the second insulating layer 61"; and

The light-emitting layer 42" and the second electrode layer 43" are formed on the first electrode layer 41", so that the light incident from the light-emitting layer 42" into the pixel defining layer 5" is reflected from the reflective layer 63" into the pixel structure exiting surface. For example, the reflective layer 63" reflects the light 21 incident from the light emitting layer 42" into the pixel defining layer 5" to exit in a direction substantially parallel to the exit direction of the pixel structure.

In this way, the reflective layer 63" can reflect the light propagating laterally in the pixel defining layer 5" to exit from the output surface of the pixel structure, thereby forming light that contributes to the display effect, improving the display effect and reducing light consumption.

In one embodiment, in the step of forming the pixel defining layer 5" on the outer edge of the first electrode layer 41", the height of the pixel defining layer 5" is made smaller than the height of the second insulating layer 61".

It can be understood that the method of the embodiment of the present utility model also includes the following steps: before forming the first insulating layer 3, forming a pixel driving unit layer including a thin film transistor on a substrate 1 made of glass or transparent resin; A first insulating layer 3 is formed on the driving unit layer.

In one embodiment, as shown in FIG. 6a, after the first insulating layer 3 is formed, a via hole (not shown) can be formed in the first insulating layer 3 by using a patterning process. After the first insulating layer is cured, On the first insulating layer 3, coat the second insulating layer 61 ", form an opening slightly larger than the pixel area with a patterning process, and then solidify. In an alternative embodiment, for example, a single halftone (halftone) can be used ) or a gray tone (grey tone) mask through a patterning process by controlling the transmittance of the exposure beam passing through the mask to form the first insulating layer 3 , the second insulating layer 61 ″ and the via holes at one time.

As shown in Figure 6b, on the first insulating layer 3 and the second insulating layer 61 " deposit a metal electrode reflective layer or other types of composite conductive light reflective layers; after that, use a patterning process to use the metal electrode reflective layer as the first electrode layer 41 ″, and a metal reflective layer 63 ″ disposed on the inner wall of the opening located outside, wherein the first electrode layer 41 ″ is disconnected from the reflective layer 63 ″.

As shown in Figure 6c, a pixel defining layer 5" is formed on the outer edge of the first electrode layer 41" by coating and patterning processes, and the outer surface of the pixel defining layer 5" is in contact with the second insulating layer 61". Grooves 62" are formed on the inner surface of the inner surface; wherein, the height of the pixel defining layer 5" is smaller than the height of the second insulating layer 61", and the pixel defining layer 5" covers the edge of the first electrode layer 41", and is arranged at the boundary with the pixel The edge of the reflective layer 63" on the inner sidewall of the second insulating layer 61" opposite to the layer 5", the outer sidewall of the pixel defining layer 5" and the inner sidewall of the second insulating layer 61" form a groove 62"; the pixel defining layer 5" and the second insulating layer 61" can be made of the same material, for example, by covering an organic film layer made of such as acrylic or PI (polyimide) material and using, for example, exposure, development and etching The patterning process of the process is formed, or it is formed by coating a photosensitive organic material and adopting an exposure and development process.

Finally, as shown in FIG. 6d , an OLED organic film layer is deposited by FMM and evaporation process to form a light emitting layer 42 ″; then a transparent or transflective second electrode layer 43 ″ is formed by evaporation process.

8a-8b are cross-sectional views showing a part of the operation process of fabricating the pixel structure of the fourth exemplary embodiment of the present invention. It can be understood that the method of the fourth embodiment includes the steps of Figs. 6a and 6b in the method of the third embodiment. On the basis of the structure shown in FIG. 6b, as shown in FIG. 8a, a pixel defining layer 53 is formed on the outer edge of the first electrode layer 41″ by coating and patterning processes, and the outer surface of the pixel defining layer 53 is in contact with The reflective layer 63" on the inner surface of the second insulating layer 61" is in contact with. That is, the pixel defining layer 53 covers the entire reflective layer 63".

Finally, as shown in FIG. 8b , an OLED organic film layer is deposited by FMM and evaporation process to form a light-emitting layer 42 ″; then a transparent or transflective second electrode layer 43 ″ is formed by evaporation process.

Although it has been described in the above first and second embodiments that the reflective component has grooves, the present invention is not limited thereto. It can be understood that, in an alternative embodiment, the trench can be filled with a transparent insulating material so that the surface of the pixel structure is flat, but the reflective layer still needs to be retained. In the embodiment of the present utility model, the patterning process generally includes processes such as coating photoresist, exposure, development, etching, photoresist stripping; or, as long as the process that can form the required pattern can be a patterning process, The utility model is not limited.

According to the pixel structure, the display device having such a pixel structure, and the manufacturing method of the pixel structure according to the above-mentioned embodiments of the present invention, by setting a reflective component, the light incident from the light-emitting layer into the pixel-defining layer is reflected into a Emitted from the emitting surface of the pixel structure, the light beam incident into the pixel defining layer can be converted into an effective light beam of the pixel structure, which improves the display effect and reduces light consumption.

The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the utility model in detail. It should be understood that the above descriptions are only specific embodiments of the utility model and are not intended to limit the utility model. For new models, any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present utility model shall be included within the protection scope of the present utility model.

Claims (10)

1. a dot structure, is characterized in that, comprising:

First insulating barrier;

Luminescence unit, is arranged on described first insulating barrier, and comprises the first electrode layer, luminescent layer and the second electrode lay;

Pixel defines layer, is configured for restriction pixel openings, and described luminescence unit is arranged in described pixel openings; And

Reflection subassembly, defines layer around described pixel and arranges, to be reflected into penetrate inciding the described pixel light defined in layer from described luminescent layer from the exit facet of described dot structure.

2. dot structure as claimed in claim 1, it is characterized in that, described reflection subassembly comprises:

Second insulating barrier, is positioned at described pixel and defines the periphery of layer and be arranged on described first insulating barrier;

Groove, is formed in described second insulating barrier and described pixel defines between layer; And;

Reflector, is arranged on the side being positioned at described second insulating barrier of described groove, to reflect through the described light that described pixel defines layer.

3. dot structure as claimed in claim 2, it is characterized in that, the bottom of described groove extends in the thickness at least partially of described first insulating barrier.

4. the dot structure as described in any one in claim 1-3, is characterized in that, described pixel defines the outward flange that layer covers described first electrode layer.

5. dot structure as claimed in claim 2 or claim 3, it is characterized in that, described second insulating barrier and described pixel define layer and are formed in same layer and are made up of identical material, and described second insulating barrier is identical with the height that described pixel defines layer.

6. dot structure as claimed in claim 2 or claim 3, it is characterized in that, described second insulating barrier and described pixel define layer and are formed in same layer and are made up of identical material, and the height of described second insulating barrier is greater than the height that described pixel defines layer.

7. dot structure as claimed in claim 2 or claim 3, it is characterized in that, described reflector is formed in same layer with described first electrode layer and is made up of identical material.

8. dot structure as claimed in claim 7, it is characterized in that, the height of described second insulating barrier is greater than the height that described pixel defines layer.

9. dot structure as claimed in claim 1, it is characterized in that, described reflection subassembly comprises:

Second insulating barrier, is positioned at described pixel and defines the periphery of layer and be arranged on described first insulating barrier; And

Reflector, what be arranged on described second insulating barrier defines on the inwall of the side of layer in the face of described pixel, to reflect the described light defining layer injection from described pixel,

Wherein, the outer surface that described pixel defines layer contacts with described reflector.

10. a display unit, is characterized in that, comprises the dot structure as described in any one in claim 1-9.