CN109037347A - A kind of bismuth titanate film transistor and preparation method with sandwich structure - Google Patents
A kind of bismuth titanate film transistor and preparation method with sandwich structure Download PDFInfo
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- CN109037347A CN109037347A CN201810848800.7A CN201810848800A CN109037347A CN 109037347 A CN109037347 A CN 109037347A CN 201810848800 A CN201810848800 A CN 201810848800A CN 109037347 A CN109037347 A CN 109037347A
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- 229910002115 bismuth titanate Inorganic materials 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 43
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000002243 precursor Substances 0.000 claims abstract description 18
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 32
- 238000000137 annealing Methods 0.000 claims description 32
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 24
- 150000000703 Cerium Chemical class 0.000 claims description 24
- 239000000243 solution Substances 0.000 claims description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000013019 agitation Methods 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 238000004528 spin coating Methods 0.000 claims description 16
- 238000003756 stirring Methods 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 230000032683 aging Effects 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 8
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 230000003252 repetitive effect Effects 0.000 claims description 8
- 239000012266 salt solution Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 7
- -1 isooctyl Chemical group 0.000 claims description 3
- VGBWDOLBWVJTRZ-UHFFFAOYSA-K cerium(3+);triacetate Chemical compound [Ce+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VGBWDOLBWVJTRZ-UHFFFAOYSA-K 0.000 claims description 2
- OZECDDHOAMNMQI-UHFFFAOYSA-H cerium(3+);trisulfate Chemical compound [Ce+3].[Ce+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OZECDDHOAMNMQI-UHFFFAOYSA-H 0.000 claims description 2
- 229910000333 cerium(III) sulfate Inorganic materials 0.000 claims description 2
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 48
- 239000010409 thin film Substances 0.000 abstract description 24
- 239000012769 display material Substances 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 abstract description 4
- 239000012776 electronic material Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 238000010998 test method Methods 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- ODPUKHWKHYKMRK-UHFFFAOYSA-N cerium;nitric acid Chemical compound [Ce].O[N+]([O-])=O ODPUKHWKHYKMRK-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 239000002238 carbon nanotube film Substances 0.000 description 2
- RWACICCRNCPMDT-UHFFFAOYSA-N cerium sulfuric acid Chemical group [Ce].S(O)(O)(=O)=O RWACICCRNCPMDT-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- HRXZUGNDGULQSA-UHFFFAOYSA-N acetic acid;cerium Chemical group [Ce].CC(O)=O.CC(O)=O.CC(O)=O HRXZUGNDGULQSA-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to the technical fields of electronic material, provide a kind of bismuth titanate film transistor and preparation method with sandwich structure.This method is by preparing cerium dopping bismuth titanates precursor solution, and it is coated on substrate surface and forms cerium dopping bismuth titanate film, grid, drain electrode and source electrode are respectively formed by magnetically controlled DC sputtering again, the thin film transistor (TFT) of Ag- bismuth titanates-Al- bismuth titanates-Ag sandwich structure is made.It is compared with the traditional method, thin film transistor (TFT) prepared by the present invention is vertical structure, has tunnel-effect, carrier mobility and threshold voltage are smaller, and remanent polarization is larger, and leakage current density is smaller, can be used as active organic electroluminescent display material.
Description
Technical field
The invention belongs to the technical fields of electronic material, provide a kind of bismuth titanate film crystal with sandwich structure
Pipe and preparation method.
Background technique
The every technology for making a general survey of information age fast development, no matter network technology and software or the communication technology, computer
Technology does not just constitute if doing human-computer interaction interface without the flat panel display that thin film transistor-liquid crystal display is representative
Present information-intensive society.At present liquid crystal display with low-voltage, low-power consumption, be suitable for circuit integration, be light and handy portable the advantages that and
By extensive research and application.The development experience of LCD technology twisted-nematic, super twisted nematic and thin film transistor (TFT)
Three important developing stage of array.
In recent years, it due to the feature performance benefit of liquid crystal display, is taken the lead in putting into market and is applied in different field.Film is brilliant
The liquid crystal display of body pipe addressing is shown with the video of its large capacity, fine definition and full color becomes liquid crystal or even entire plate
The dominant technology of display technology, relevant new high-tech industry also become current major investment direction.Thin film transistor (TFT) manufacture
Technology is in key position in the liquid crystal display of its addressing, its research and development are always the emphasis in research.Usual film
Transistor active material is silicon thin film, different according to silicon thin film structure, and transistor is divided into amorphous silicon, polysilicon, monocrystalline silicon, organic
Thin film silicon/crystalline silicon.
In recent years, ORGANIC ELECTROLUMINESCENCE DISPLAYS material is with thin and lightweight, active is luminous, wide viewing angle, quick response, energy consumption
Low, low temperature and the advantages that anti-seismic performance is excellent and potential flexible design, as full solid-state device, no vacuum chamber, no liquid
Ingredient, it is easy to use so be not afraid of vibration, in addition high resolution, the features such as visual angle is wide and operating temperature range is wide, fill in weapon
Standby and adverse circumstances field will be used widely.In the development and application of ORGANIC ELECTROLUMINESCENCE DISPLAYS material, film crystal
Pipe has very crucial status, and the requirement for the structure of thin film transistor (TFT) is also higher and higher.
Chinese invention patent application number 201210335082.6 discloses a kind of thin film transistor (TFT), is suitable for configuration in substrate
On, and this thin film transistor (TFT) includes gate, organic lock insulating layer, metal oxide semiconductor layer, source electrode and drain.Gate configuration
In on substrate.Organic lock insulating layer is configured on substrate to cover gate.Source electrode, drain and metal oxide semiconductor layer configure
Above organic lock insulating layer, and metal oxide semiconductor layer contact source electrode and drain.But the transistor is active organic
Application performance in electroluminescent material is bad.
Chinese invention patent application number 201710954538.X discloses a kind of carbon nano-tube film transistor, the carbon nanometer
The material of active layer in pipe thin film transistor (TFT) is composite carbon nanometer tube；Wherein, composite carbon nanometer tube include carbon nanotube and
The metal oxide being filled in inside carbon nanotube.The present invention passes through with the composite carbon nanometer of metal oxide filled carbon nanotube
Material of the pipe as active layer can effectively improve carbon and receive to make full use of metal oxide and the semiconducting behavior of CNT
The mobility of mitron thin film transistor (TFT), thus by the carbon nano-tube film transistor application in display devices such as OLED or QLED
When, it can preferably meet driving demand.But because its carrier mobility is big, it is aobvious active organic electroluminescent is not suitable for
Show material.
In conclusion in the research and application of active organic electroluminescent display material, traditional horizontal structure
Thin film transistor (TFT) carrier mobility is big, and threshold voltage is big, is unable to satisfy use demand.Therefore exploitation novel vertical structure is thin
Film transistor has great significance for the development and application of active organic electroluminescent display material.
Summary of the invention
As it can be seen that the thin film transistor (TFT) carrier mobility for the horizontal structure that the prior art generally uses is big, threshold voltage is big,
It is not suitable for use in active organic electroluminescent display material.In response to this, it is proposed that a kind of have sandwich structure
Bismuth titanate film transistor and preparation method, effectively limit the carrier mobility and threshold voltage of thin film transistor (TFT), can
It is widely used in active organic electroluminescent display material.
To achieve the above object, specific technical solution of the present invention is as follows:
A kind of preparation method of the bismuth titanate film transistor with sandwich structure, the bismuth titanate film transistor preparation
Specific step is as follows:
(1) bismuth nitrate, cerium salt are added in chloroform, to being completely dissolved metal salt solution is made, then by metatitanic acid four in magnetic agitation
Butyl ester, acetic acid are added to absolute ethanol, then magnetic agitation is slowly added dropwise molten into metal salt to being completely dissolved under stirring
Liquid continues 10 ~ 12h of stirring, is further arranged in insulating box and is aged, and cerium dopping bismuth titanates precursor solution is made；
(2) with SiO2/ Si is substrate, first passes through sol evenning machine and just gets rid of precursor solution low speed, then high speed spin coating is coated on lining
Bottom surface, and short annealing, repetitive coatings and annealing process are carried out, cerium dopping bismuth titanate film is made；
(3) it is mixed in cerium dopping bismuth titanate film side deposited aluminum layer as grid, and with another layer of cerium by magnetically controlled DC sputtering
Miscellaneous bismuth titanate film is compound, and bismuth titanates-Al- bismuth titanates three-decker is made, then by magnetically controlled DC sputtering in three-decker
Two sides distinguish depositing silver layers, as drain electrode and source electrode, be made Ag- bismuth titanates-Al- bismuth titanates-Ag sandwich structure film
Transistor.
Preferably, step (1) cerium salt is at least one of cerous nitrate, cerous sulfate, cerous acetate, isooctyl acid cerium.
Preferably, in step (1) described reaction system, 12 ~ 15 parts by weight of bismuth nitrate, 2 ~ 4 parts by weight of cerium salt, four fourth of metatitanic acid
15 ~ 18 parts by weight of ester, 2 ~ 3 parts by weight of acetic acid, 30 ~ 35 parts by weight of chloroform, 25 ~ 39 parts by weight of dehydrated alcohol.
Preferably, the temperature of step (1) described ageing is 15 ~ 20 DEG C, and the time is 4 ~ 8d.
Preferably, the revolving speed that step (2) described low speed is just got rid of is 200 ~ 300r/min, and the time is 10 ~ 12s.
Preferably, the revolving speed of step (2) the high speed spin coating is 3800 ~ 4200r/min, and the time is 15 ~ 18s.
Preferably, the temperature of step (2) described annealing is 400 ~ 600 DEG C, and the time is 10 ~ 20min.
Preferably, the number of repetition of step (2) coating and annealing process is 3 ~ 8 times.
The bismuth titanate film with sandwich structure being prepared the present invention also provides a kind of above-mentioned preparation method is brilliant
Body pipe.The bismuth titanate film transistor is and to be coated on substrate surface shape by preparing cerium dopping bismuth titanates precursor solution
At cerium dopping bismuth titanate film, then grid, drain electrode and source electrode are respectively formed by magnetically controlled DC sputtering and are made.
The present invention provides a kind of bismuth titanate film transistor and preparation method with sandwich structure, with the prior art
It compares, the feature and excellent effect protruded is:
1. the structure that cerium dopping bismuth titanate film transistor produced by the present invention has similar sandwich, wherein Ag and cerium dopping
Schottky contacts are formed between bismuth titanate film, form Ohmic contact between Al and cerium dopping bismuth titanate film.The structure belongs to
Vertical structure has tunnel-effect, can reduce the conducting channel length of thin film transistor (TFT) to the full extent, improve the work of transistor
Make electric current.Compared with the thin film transistor (TFT) of horizontal structure, there is smaller carrier mobility and threshold voltage.
2. preparation method of the invention keeps the residual polarization of thin film transistor (TFT) strong by adulterating cerium in bismuth titanate film
Degree increases, and leakage current density reduces.
3. preparation method of the invention, preparation process is easily controllable, and product structure and performance are stable, it can be achieved that industrial metaplasia
It produces.
Specific embodiment
In the following, the present invention will be further described in detail by way of specific embodiments, but this should not be interpreted as to the present invention
Range be only limitted to example below.Without departing from the idea of the above method of the present invention, according to ordinary skill
The various replacements or change that knowledge and customary means are made, should be included in the scope of the present invention.
Embodiment 1
(1) bismuth nitrate, cerium salt are added in chloroform, to being completely dissolved metal salt solution is made, then by metatitanic acid four in magnetic agitation
Butyl ester, acetic acid are added to absolute ethanol, then magnetic agitation is slowly added dropwise molten into metal salt to being completely dissolved under stirring
Liquid continues to stir 11h, is further arranged in insulating box and is aged, cerium dopping bismuth titanates precursor solution is made；Cerium salt is nitric acid
Cerium；In reaction system, 13 parts by weight of bismuth nitrate, 3 parts by weight of cerium salt, 17 parts by weight of butyl titanate, 2 parts by weight of acetic acid, chloroform
33 parts by weight, 32 parts by weight of dehydrated alcohol；The temperature of ageing is 17 DEG C, time 5d；
(2) with SiO2/ Si is substrate, first passes through sol evenning machine and just gets rid of precursor solution low speed, then high speed spin coating is coated on lining
Bottom surface, and short annealing, repetitive coatings and annealing process are carried out, cerium dopping bismuth titanate film is made；The revolving speed that low speed is just got rid of
For 260r/min, time 11s；The revolving speed of high speed spin coating is 3900r/min, time 17s；The temperature of annealing is 480 DEG C, when
Between be 16min；The number of repetition of coating and annealing process is 7 times；
(3) it is mixed in cerium dopping bismuth titanate film side deposited aluminum layer as grid, and with another layer of cerium by magnetically controlled DC sputtering
Miscellaneous bismuth titanate film is compound, and bismuth titanates-Al- bismuth titanates three-decker is made, then by magnetically controlled DC sputtering in three-decker
Two sides distinguish depositing silver layers, as drain electrode and source electrode, be made Ag- bismuth titanates-Al- bismuth titanates-Ag sandwich structure film
Transistor.
Test method:
(1) carrier mobility: carrying out the measurement of carrier mobility using flight time (TOF) method, is tested using traditional TOF
Device is tested under light pulse excitation, and test environment temperature is 25 DEG C, and relative humidity 55% does photoelectric current and time
At logarithm (i.e. logI-logt curve), the turning point t that photoelectric current has a deformation is obtainedtr, according to formula L=d/ttrE is calculated
Carrier mobility, wherein d is the film thickness of transistor device produced by the present invention；
(2) threshold voltage: thin film transistor (TFT) produced by the present invention is connected into standard testing circuit, is retouched using transistor characteristor characteristic curve
It draws instrument to be tested, grid bias increases to 30V from 0 when test, is spaced 5V, obtains thin film transistor (TFT) transfer curve figure, in turn
(I is calculatedDS)1/2-VGSCurve, wherein IDSFor drain current, VGSFor gate source voltage, the coke of curve linear part and abscissa
Point voltage is the threshold voltage of film；
(3) remanent polarization, leakage current density: the test of Radiant Technologies sections electroanalyzer is directlyed adopt originally
The electric property for inventing thin film transistor (TFT) obtained, obtains the hysteresis loop of thin film transistor (TFT), and then leak source density curve, according to
Tracing analysis, the leakage current under remanent polarization and 10V external voltage when obtaining larger coercive field (2Ec=333kV/cm)
Density；
The data obtained is as shown in table 1.
Embodiment 2
(1) bismuth nitrate, cerium salt are added in chloroform, to being completely dissolved metal salt solution is made, then by metatitanic acid four in magnetic agitation
Butyl ester, acetic acid are added to absolute ethanol, then magnetic agitation is slowly added dropwise molten into metal salt to being completely dissolved under stirring
Liquid continues to stir 10h, is further arranged in insulating box and is aged, cerium dopping bismuth titanates precursor solution is made；Cerium salt is sulfuric acid
Cerium；In reaction system, 13 parts by weight of bismuth nitrate, 2 parts by weight of cerium salt, 16 parts by weight of butyl titanate, 2 parts by weight of acetic acid, chloroform
32 parts by weight, 35 parts by weight of dehydrated alcohol；The temperature of ageing is 16 DEG C, time 7d；
(2) with SiO2/ Si is substrate, first passes through sol evenning machine and just gets rid of precursor solution low speed, then high speed spin coating is coated on lining
Bottom surface, and short annealing, repetitive coatings and annealing process are carried out, cerium dopping bismuth titanate film is made；The revolving speed that low speed is just got rid of
For 220r/min, time 12s；The revolving speed of high speed spin coating is 3900r/min, time 17s；The temperature of annealing is 450 DEG C, when
Between be 18min；The number of repetition of coating and annealing process is 4 times；
(3) it is mixed in cerium dopping bismuth titanate film side deposited aluminum layer as grid, and with another layer of cerium by magnetically controlled DC sputtering
Miscellaneous bismuth titanate film is compound, and bismuth titanates-Al- bismuth titanates three-decker is made, then by magnetically controlled DC sputtering in three-decker
Two sides distinguish depositing silver layers, as drain electrode and source electrode, be made Ag- bismuth titanates-Al- bismuth titanates-Ag sandwich structure film
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Embodiment 3
(1) bismuth nitrate, cerium salt are added in chloroform, to being completely dissolved metal salt solution is made, then by metatitanic acid four in magnetic agitation
Butyl ester, acetic acid are added to absolute ethanol, then magnetic agitation is slowly added dropwise molten into metal salt to being completely dissolved under stirring
Liquid continues to stir 12h, is further arranged in insulating box and is aged, cerium dopping bismuth titanates precursor solution is made；Cerium salt is acetic acid
Cerium；In reaction system, 14 parts by weight of bismuth nitrate, 4 parts by weight of cerium salt, 17 parts by weight of butyl titanate, 3 parts by weight of acetic acid, chloroform
34 parts by weight, 28 parts by weight of dehydrated alcohol；The temperature of ageing is 19 DEG C, time 5d；
(2) with SiO2/ Si is substrate, first passes through sol evenning machine and just gets rid of precursor solution low speed, then high speed spin coating is coated on lining
Bottom surface, and short annealing, repetitive coatings and annealing process are carried out, cerium dopping bismuth titanate film is made；The revolving speed that low speed is just got rid of
For 280r/min, time 11s；The revolving speed of high speed spin coating is 4100r/min, time 16s；The temperature of annealing is 550 DEG C, when
Between be 13min；The number of repetition of coating and annealing process is 7 times；
(3) it is mixed in cerium dopping bismuth titanate film side deposited aluminum layer as grid, and with another layer of cerium by magnetically controlled DC sputtering
Miscellaneous bismuth titanate film is compound, and bismuth titanates-Al- bismuth titanates three-decker is made, then by magnetically controlled DC sputtering in three-decker
Two sides distinguish depositing silver layers, as drain electrode and source electrode, be made Ag- bismuth titanates-Al- bismuth titanates-Ag sandwich structure film
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Embodiment 4
(1) bismuth nitrate, cerium salt are added in chloroform, to being completely dissolved metal salt solution is made, then by metatitanic acid four in magnetic agitation
Butyl ester, acetic acid are added to absolute ethanol, then magnetic agitation is slowly added dropwise molten into metal salt to being completely dissolved under stirring
Liquid continues to stir 10h, is further arranged in insulating box and is aged, cerium dopping bismuth titanates precursor solution is made；Cerium salt is isooctyl acid
Cerium；In reaction system, 12 parts by weight of bismuth nitrate, 2 parts by weight of cerium salt, 15 parts by weight of butyl titanate, 2 parts by weight of acetic acid, chloroform
30 parts by weight, 39 parts by weight of dehydrated alcohol；The temperature of ageing is 15 DEG C, time 8d；
(2) with SiO2/ Si is substrate, first passes through sol evenning machine and just gets rid of precursor solution low speed, then high speed spin coating is coated on lining
Bottom surface, and short annealing, repetitive coatings and annealing process are carried out, cerium dopping bismuth titanate film is made；The revolving speed that low speed is just got rid of
For 200r/min, time 12s；The revolving speed of high speed spin coating is 3800r/min, time 18s；The temperature of annealing is 400 DEG C, when
Between be 20min；The number of repetition of coating and annealing process is 5 times；
(3) it is mixed in cerium dopping bismuth titanate film side deposited aluminum layer as grid, and with another layer of cerium by magnetically controlled DC sputtering
Miscellaneous bismuth titanate film is compound, and bismuth titanates-Al- bismuth titanates three-decker is made, then by magnetically controlled DC sputtering in three-decker
Two sides distinguish depositing silver layers, as drain electrode and source electrode, be made Ag- bismuth titanates-Al- bismuth titanates-Ag sandwich structure film
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Embodiment 5
(1) bismuth nitrate, cerium salt are added in chloroform, to being completely dissolved metal salt solution is made, then by metatitanic acid four in magnetic agitation
Butyl ester, acetic acid are added to absolute ethanol, then magnetic agitation is slowly added dropwise molten into metal salt to being completely dissolved under stirring
Liquid continues to stir 12h, is further arranged in insulating box and is aged, cerium dopping bismuth titanates precursor solution is made；Cerium salt is nitric acid
Cerium；In reaction system, 15 parts by weight of bismuth nitrate, 4 parts by weight of cerium salt, 18 parts by weight of butyl titanate, 3 parts by weight of acetic acid, chloroform
35 parts by weight, 25 parts by weight of dehydrated alcohol；The temperature of ageing is 20 DEG C, time 4d；
(2) with SiO2/ Si is substrate, first passes through sol evenning machine and just gets rid of precursor solution low speed, then high speed spin coating is coated on lining
Bottom surface, and short annealing, repetitive coatings and annealing process are carried out, cerium dopping bismuth titanate film is made；The revolving speed that low speed is just got rid of
For 300r/min, time 10s；The revolving speed of high speed spin coating is 4200r/min, time 15s；The temperature of annealing is 600 DEG C, when
Between be 10min；The number of repetition of coating and annealing process is 8 times；
(3) it is mixed in cerium dopping bismuth titanate film side deposited aluminum layer as grid, and with another layer of cerium by magnetically controlled DC sputtering
Miscellaneous bismuth titanate film is compound, and bismuth titanates-Al- bismuth titanates three-decker is made, then by magnetically controlled DC sputtering in three-decker
Two sides distinguish depositing silver layers, as drain electrode and source electrode, be made Ag- bismuth titanates-Al- bismuth titanates-Ag sandwich structure film
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Embodiment 6
(1) bismuth nitrate, cerium salt are added in chloroform, to being completely dissolved metal salt solution is made, then by metatitanic acid four in magnetic agitation
Butyl ester, acetic acid are added to absolute ethanol, then magnetic agitation is slowly added dropwise molten into metal salt to being completely dissolved under stirring
Liquid continues to stir 11h, is further arranged in insulating box and is aged, cerium dopping bismuth titanates precursor solution is made；Cerium salt is sulfuric acid
Cerium；In reaction system, 14 parts by weight of bismuth nitrate, 3 parts by weight of cerium salt, 16 parts by weight of butyl titanate, 2 parts by weight of acetic acid, chloroform
32 parts by weight, 33 parts by weight of dehydrated alcohol；The temperature of ageing is 18 DEG C, time 6d；
(2) with SiO2/ Si is substrate, first passes through sol evenning machine and just gets rid of precursor solution low speed, then high speed spin coating is coated on lining
Bottom surface, and short annealing, repetitive coatings and annealing process are carried out, cerium dopping bismuth titanate film is made；The revolving speed that low speed is just got rid of
For 250r/min, time 11s；The revolving speed of high speed spin coating is 4000r/min, time 16s；The temperature of annealing is 500 DEG C, when
Between be 15min；The number of repetition of coating and annealing process is 6 times；
(3) it is mixed in cerium dopping bismuth titanate film side deposited aluminum layer as grid, and with another layer of cerium by magnetically controlled DC sputtering
Miscellaneous bismuth titanate film is compound, and bismuth titanates-Al- bismuth titanates three-decker is made, then by magnetically controlled DC sputtering in three-decker
Two sides distinguish depositing silver layers, as drain electrode and source electrode, be made Ag- bismuth titanates-Al- bismuth titanates-Ag sandwich structure film
Transistor.
Test method and embodiment 1 are consistent, and the data obtained is as shown in table 1.
Table 1:
Claims (9)
1. a kind of preparation method of the bismuth titanate film transistor with sandwich structure, which is characterized in that the bismuth titanates is thin
Specific step is as follows for film transistor preparation:
(1) bismuth nitrate, cerium salt are added in chloroform, to being completely dissolved metal salt solution is made, then by metatitanic acid four in magnetic agitation
Butyl ester, acetic acid are added to absolute ethanol, then magnetic agitation is slowly added dropwise molten into metal salt to being completely dissolved under stirring
Liquid continues 10 ~ 12h of stirring, is further arranged in insulating box and is aged, and cerium dopping bismuth titanates precursor solution is made；
(2) with SiO2/ Si is substrate, first passes through sol evenning machine and just gets rid of precursor solution low speed, then high speed spin coating is coated on substrate
Surface, and short annealing, repetitive coatings and annealing process are carried out, cerium dopping bismuth titanate film is made；
(3) it is mixed in cerium dopping bismuth titanate film side deposited aluminum layer as grid, and with another layer of cerium by magnetically controlled DC sputtering
Miscellaneous bismuth titanate film is compound, and bismuth titanates-Al- bismuth titanates three-decker is made, then by magnetically controlled DC sputtering in three-decker
Two sides distinguish depositing silver layers, as drain electrode and source electrode, be made Ag- bismuth titanates-Al- bismuth titanates-Ag sandwich structure film
Transistor.
2. a kind of preparation method of the bismuth titanate film transistor with sandwich structure according to claim 1, feature
Be: step (1) cerium salt is at least one of cerous nitrate, cerous sulfate, cerous acetate, isooctyl acid cerium.
3. a kind of preparation method of the bismuth titanate film transistor with sandwich structure according to claim 1, feature
It is: in step (1) described reaction system, 12 ~ 15 parts by weight of bismuth nitrate, 2 ~ 4 parts by weight of cerium salt, 15 ~ 18 weight of butyl titanate
Measure part, 2 ~ 3 parts by weight of acetic acid, 30 ~ 35 parts by weight of chloroform, 25 ~ 39 parts by weight of dehydrated alcohol.
4. a kind of preparation method of the bismuth titanate film transistor with sandwich structure according to claim 1, feature
Be: the temperature of step (1) described ageing is 15 ~ 20 DEG C, and the time is 4 ~ 8d.
5. a kind of preparation method of the bismuth titanate film transistor with sandwich structure according to claim 1, feature
Be: the revolving speed that step (2) described low speed is just got rid of is 200 ~ 300r/min, and the time is 10 ~ 12s.
6. a kind of preparation method of the bismuth titanate film transistor with sandwich structure according to claim 1, feature
Be: the revolving speed of step (2) the high speed spin coating is 3800 ~ 4200r/min, and the time is 15 ~ 18s.
7. a kind of preparation method of the bismuth titanate film transistor with sandwich structure according to claim 1, feature
Be: the temperature of step (2) described annealing is 400 ~ 600 DEG C, and the time is 10 ~ 20min.
8. a kind of preparation method of the bismuth titanate film transistor with sandwich structure according to claim 1, feature
Be: the number of repetition of step (2) coating and annealing process is 3 ~ 8 times.
9. a kind of bismuth titanate film with sandwich structure that any one of claim 1 ~ 8 preparation method is prepared is brilliant
Body pipe.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116253821A (en) * | 2023-02-24 | 2023-06-13 | 华南理工大学 | Bismuth-doped liquid crystal elastomer material and preparation method and application thereof |
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| US6429457B1 (en) * | 1998-01-16 | 2002-08-06 | Thin Film Electronics Asa | Field-effect transistor |
| CN101533893A (en) * | 2009-04-22 | 2009-09-16 | 天津理工大学 | Organic vertical transistor with high magnification |
| CN203026512U (en) * | 2012-12-25 | 2013-06-26 | 京东方科技集团股份有限公司 | Thin film transistor, array base plate and display device |
| CN105529356A (en) * | 2016-02-24 | 2016-04-27 | 西安交通大学 | Field emission transistor for cylindrical conducting channel with vertical structure |
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2018
- 2018-07-28 CN CN201810848800.7A patent/CN109037347A/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6429457B1 (en) * | 1998-01-16 | 2002-08-06 | Thin Film Electronics Asa | Field-effect transistor |
| CN101533893A (en) * | 2009-04-22 | 2009-09-16 | 天津理工大学 | Organic vertical transistor with high magnification |
| CN203026512U (en) * | 2012-12-25 | 2013-06-26 | 京东方科技集团股份有限公司 | Thin film transistor, array base plate and display device |
| CN105529356A (en) * | 2016-02-24 | 2016-04-27 | 西安交通大学 | Field emission transistor for cylindrical conducting channel with vertical structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116253821A (en) * | 2023-02-24 | 2023-06-13 | 华南理工大学 | Bismuth-doped liquid crystal elastomer material and preparation method and application thereof |
| CN116253821B (en) * | 2023-02-24 | 2024-06-04 | 华南理工大学 | Bismuth-doped liquid crystal elastomer material and preparation method and application thereof |
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