CN105529356A - Field emission transistor for cylindrical conducting channel with vertical structure - Google Patents
Field emission transistor for cylindrical conducting channel with vertical structure Download PDFInfo
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- CN105529356A CN105529356A CN201610102073.0A CN201610102073A CN105529356A CN 105529356 A CN105529356 A CN 105529356A CN 201610102073 A CN201610102073 A CN 201610102073A CN 105529356 A CN105529356 A CN 105529356A
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- Prior art keywords
- emission transistor
- channel
- raceway groove
- flied emission
- vertical stratification
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- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000013517 stratification Methods 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 238000002164 ion-beam lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
Abstract
The present invention discloses a field emission transistor for a cylindrical vacuum channel with a vertical structure. The field emission transistor for the cylindrical vacuum channel with the vertical structure is composed of three layers of electrodes and two dielectric layers; the vacuum channel in a central position of each film can be obtained by etching; the length of the channel is controlled precisely by controlling the thicknesses of each layer of electrodes and the dielectric layers; when the length of the channel is similar to a mean free path of electrons in the atmosphere, the scattering of the electrons and atmospheric molecules in the channel can be ignored in a process that a device works in an atmospheric environment, equivalently, the device works in a vacuum environment; the cylindrical vacuum conducting channel allows all positions on a cathode emission surface to have completely symmetrical accelerating electric fields, so as to effectively avoid the problem of device failure because a local electric field is too strong when the device works in a strong electric field; and a signal can be amplified or modulated in complex environments, and the operation is stable.
Description
[technical field]
The present invention relates to Flied emission transistor, particularly a kind of Flied emission transistor with vertical stratification cylindrical conductive raceway groove.
[background technology]
In the past few decades, solid electronic device instead of vacuum electron device gradually in a lot of application, and such as, vacuum tube is replaced by solid-state transistor already completely.This has low cost of manufacture, low-power consumption, life-span length due to solid electronic device and is more conducive to integrated feature.
But vacuum electron device is operated in vacuum environment, electronics can not be subject to lattice scattering in transmitting procedure, and simultaneously the transmission rate of electronics can reach the light velocity, much larger than the transmission rate of electronics in solid state device.Therefore, vacuum electron device still has irreplaceable status in some specific areas.
In recent years, the advantages of vacuum electron device and solid electronic device is successfully got up by some researchers, has produced the Flied emission transistor with vacuum conducting channel.This Flied emission transistor with vacuum conducting channel adopts traditional semiconductor preparing process, and can be well integrated.But, preparation technology's more complicated in nanoscale crack between the negative electrode of this device and anode, and stable long Flied emission can not be obtained.
[summary of the invention]
The object of the invention is to propose a kind of Flied emission transistor with vertical stratification cylindrical conductive raceway groove, can amplify signal in the such as complex environment such as high temperature and electromagnetic radiation or modulate, there is preparation method simply, the advantage of working stability.
The object of the invention is to be achieved through the following technical solutions:
A kind of Flied emission transistor with vertical stratification cylindrical conductive raceway groove, comprise the negative electrode of longitudinal stack successively from top to bottom, grid and anode and the two-layer anode dielectric layer in the middle of triple electrode, triple electrode and anode dielectric layer centre position vertical etching have cylinder vacuum conducting channel, silicon base serves as anode, other electrodes and grading electrode dielectric layer are formed by making plural layers on a silicon substrate successively, accurately control the length of vacuum conducting channel by controlling each layer film thickness.
Further, described cylinder vacuum conducting channel is that standard cylindrical or bottom radius are greater than the cylindrical of top radius.
Further, plural layers are prepared from by chemical vapour deposition (CVD), magnetron sputtering office electron beam evaporation process.
Further, the thickness that each layer film is total is added close with the mean free path of electronics in atmospheric environment or less.
Further, adopt the material having the lower material of work function or have a high field enhancement factor surface characteristic as negative electrode.
Further, negative electrode adopts Al, Mg, Graphene, diamond or carbon nano-tube to make.
The Flied emission transistor of the vertical stratification cylinder vacuum raceway groove that the present invention proposes, is made up of triple electrode and two layer medium layer; The width in structure nano level crack of the present invention and the length of vacuum conducting channel accurately can be controlled by the thickness controlling each layer film, preparation method is simple, columniform vacuum conducting channel makes all positions on cathode emission face have the accelerating field of full symmetric, thus by when effectively avoiding devices function under strong electric field, because the problem of the component failure caused by force is crossed by internal field, can amplify signal in complex environment or modulate, working stability.
Further, plural layers can pass through the technique preparations such as chemical vapour deposition (CVD), magnetron sputtering and electron beam evaporation, and its Anodic can be served as by silicon base; Cylinder vacuum conducting channel can be obtained by plasma etching, focused-ion-beam lithography or wet etching, and the vacuum channel obtained with different preparation technologies has different shapes; Negative electrode can adopt Al, Mg, Graphene, diamond etc. have the material of low work function or adopt carbon nano-tube etc. to have the material preparation of large field enhancement factor; The total thickness of each layer film is added up close with the mean free path of electronics in atmospheric environment or less mutually.The electron emission face of negative electrode is circular, when each electrode applies voltage, electron emission face has in theory identical tangential Electric Field Distribution, and when voltage is higher, this characteristic will effectively reduce because the excessive component failure caused of internal field.
Further, adopt different manufacture crafts to obtain shape and the different vacuum channel of surface characteristic, produce different characteristics.
[accompanying drawing explanation]
Fig. 1 is the Flied emission transistor arrangement schematic diagram of vertical stratification cylinder vacuum raceway groove;
Fig. 2 is the operation principle schematic diagram of the Flied emission transistor of vertical stratification cylinder vacuum raceway groove;
Fig. 3 is the cylinder vacuum channel structure schematic diagram obtained by dry etching, is one of embodiment of the present invention;
Fig. 4 is the cylinder vacuum channel structure schematic diagram obtained by wet etching, is the embodiment of the present invention two;
In figure: anode 100, grid 210, negative electrode 150, anode dielectric layer 140, gate dielectric layer 120;
[embodiment]
Below in conjunction with drawings and Examples, the present invention is described in further detail, but be not limited to these embodiments.
Fig. 1 shows the Flied emission transistor arrangement of vertical stratification cylinder vacuum raceway groove, wherein contains anode 100, grid 210, negative electrode 150 and the two-layer anode dielectric layer 140 in the middle of triple electrode and gate dielectric layer 120.Each layer electrode and medium are made by the film preparing technology of standard, finally in layers between position etch cylinder vacuum conducting channel, accurately control the length of vacuum conducting channel by controlling each layer film thickness.
Plural layers can pass through the technique preparations such as chemical vapour deposition (CVD), magnetron sputtering and electron beam evaporation, and its Anodic can be served as by silicon base; Cylinder vacuum conducting channel can be obtained by plasma etching, focused-ion-beam lithography or wet etching, and the vacuum channel obtained with different preparation technologies has different shapes; Negative electrode can adopt Al, Mg, Graphene, diamond etc. have the material of low work function or adopt carbon nano-tube etc. to have the material preparation of large field enhancement factor; The total thickness of each layer film is added up close with the mean free path of electronics in atmospheric environment or less mutually.The electron emission face of negative electrode is circular, when each electrode applies voltage, electron emission face has in theory identical tangential Electric Field Distribution, and when voltage is higher, this characteristic will effectively reduce because the excessive component failure caused of internal field.
Fig. 2 shows the operation principle schematic diagram of the Flied emission transistor of vertical stratification cylinder vacuum raceway groove, when anode 100 and grid 210 add positive bias respectively, forms accelerating field at negative electrode 150 electron emitting surface.Due to screen effect and the film edge field enhancement effect of grid, accelerating field intensity at surface of emission place is much larger than intensity away from the electric field of the interface of vacuum channel of negative electrode 150 and gate dielectric layer 120, electronics is under the effect of strong accelerating field, Thermotunneling vacuum energy level is also launched from cathode surface, is collected form channel current by anode.Grid bias can the electric field strength at effective control cathode surface of emission place, thus effectively modulate channel current.Because total channel length is less than 100nm (close with electronics mean free path in an atmosphere), the electronics transmitted in raceway groove and the scattering of atmospheric molecule can be ignored, and this device can directly work in atmospheric environment.
Fig. 3 shows the cylinder vacuum channel structure schematic diagram obtained by dry etching, is one of embodiment of the present invention.The thin film growth process of employing standard grows anode dielectric layer 140, grid 210, gate dielectric layer 120 and negative electrode 150 successively on a silicon substrate, then prepares the cylinder vacuum raceway groove of specific dimensions with dry etching in each layer film central authorities grown in conjunction with photoetching process.Columniform vacuum conducting channel makes device have circular cathode emission face, the distribution full symmetric of the accelerating field on the surface of emission, and device is not easy the inefficacy occurring that the forceful electric power place, local produced by the uneven distribution electric field on the surface of emission causes.
Fig. 4 shows the cylinder vacuum channel structure schematic diagram obtained by wet etching, is the embodiment of the present invention two.The thin film growth process of employing standard grows anode dielectric layer 140, grid 210, gate dielectric layer 120 and negative electrode 150 successively on a silicon substrate, then etches in conjunction with each layer film central authorities that photoetching process is growing the cylinder vacuum raceway groove preparing specific dimensions in a wet process.Be different from dry etching, wet etching has isotropic feature, and based on etching, the cylinder vacuum raceway groove of preparation is not the cylindrical of standard in a wet process, has the advantages that bottom radius is greater than top.This structure may reduce the probability that channel electrons is collided with trench sidewalls in transmitting procedure, thus the electric current reduced in dielectric layer improves device performance and increases the stability of device.
In sum, the present invention has following advantage:
1) the Flied emission transistor of the vertical stratification cylinder vacuum raceway groove adopting the present invention to propose, vacuum conducting channel length can be precisely controlled by controlling each layer film thickness, can obtain nano level Anode-cathode Distance easily.
2) the Flied emission transistor of the vertical stratification cylinder vacuum raceway groove adopting the present invention to propose, can adopt distinct methods to prepare different cylinder vacuum conducting channels.
3) the Flied emission transistor of the vertical stratification cylinder vacuum raceway groove adopting the present invention to propose, circular cathode emission face can increase the resistance to pressure of device, reduces because the excessive component failure caused of local voltage.
Claims (6)
1. one kind has the Flied emission transistor of vertical stratification cylindrical conductive raceway groove, it is characterized in that: the negative electrode (150) comprising from top to bottom longitudinal stack successively, grid (210) and anode (100) and the two-layer anode dielectric layer (140) in the middle of triple electrode, triple electrode and anode dielectric layer centre position vertical etching have cylinder vacuum conducting channel, silicon base serves as anode (100), other electrodes and grading electrode dielectric layer are formed by making plural layers on a silicon substrate successively, the length of vacuum conducting channel is accurately controlled by controlling each layer film thickness.
2. there is the Flied emission transistor of vertical stratification cylindrical conductive raceway groove as claimed in claim 1, it is characterized in that: described cylinder vacuum conducting channel is that standard cylindrical or bottom radius are greater than the cylindrical of top radius.
3. there is the Flied emission transistor of vertical stratification cylindrical conductive raceway groove as claimed in claim 1, it is characterized in that: plural layers are prepared from by chemical vapour deposition (CVD), magnetron sputtering office electron beam evaporation process.
4. the Flied emission transistor with vertical stratification cylindrical conductive raceway groove as described in claim 1,2 or 3, is characterized in that: the total thickness of each layer film is added close with the mean free path of electronics in atmospheric environment or less.
5. the Flied emission transistor with vertical stratification cylindrical conductive raceway groove as described in claim 1,2 or 3, is characterized in that: adopt the material having the lower material of work function or have a high field enhancement factor surface characteristic as negative electrode (150).
6. the Flied emission transistor with vertical stratification cylindrical conductive raceway groove as described in claim 1,2 or 3, is characterized in that: negative electrode (150) adopts Al, Mg, Graphene, diamond or carbon nano-tube to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610102073.0A CN105529356B (en) | 2016-02-24 | 2016-02-24 | A kind of Flied emission transistor with vertical structure cylindrical conductive channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610102073.0A CN105529356B (en) | 2016-02-24 | 2016-02-24 | A kind of Flied emission transistor with vertical structure cylindrical conductive channel |
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| CN105529356A true CN105529356A (en) | 2016-04-27 |
| CN105529356B CN105529356B (en) | 2019-02-05 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9793395B1 (en) | 2016-10-06 | 2017-10-17 | International Business Machines Corporation | Vertical vacuum channel transistor |
| CN107359241A (en) * | 2016-05-10 | 2017-11-17 | 上海新昇半导体科技有限公司 | Vacuum nano pipe field-effect transistor and its manufacture method |
| CN107359242A (en) * | 2016-05-10 | 2017-11-17 | 上海新昇半导体科技有限公司 | Vacuum nano pipe field-effect transistor and its manufacture method |
| US9853163B2 (en) | 2015-09-30 | 2017-12-26 | Stmicroelectronics, Inc. | Gate all around vacuum channel transistor |
| CN108242444A (en) * | 2016-12-23 | 2018-07-03 | 上海新昇半导体科技有限公司 | Vacuum tube fet array and its manufacturing method |
| CN109037347A (en) * | 2018-07-28 | 2018-12-18 | 张玉英 | A kind of bismuth titanate film transistor and preparation method with sandwich structure |
| CN112713198A (en) * | 2020-12-30 | 2021-04-27 | 东南大学 | Vertical field emission triode based on carrier concentration regulation |
| CN113410110A (en) * | 2021-05-07 | 2021-09-17 | 南通职业大学 | Semiconductor vacuum diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101636810A (en) * | 2006-12-29 | 2010-01-27 | 塞莱斯系统集成公司 | High frequency cold cathode triode-type field-emitter vacuum tube and manufacture process thereof |
| CN101971285A (en) * | 2007-12-28 | 2011-02-09 | 塞莱斯系统集成公司 | High frequency triode-type field emission device and process for manufacturing the same |
| CN103117199A (en) * | 2011-11-17 | 2013-05-22 | 浙江海洋学院 | Pine-shaped nanometer array field emitting negative pole manufacturing method |
| CN104299988A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院半导体研究所 | Nano vacuum triode with planar emitting cathode and manufacturing method thereof |
| CN105118762A (en) * | 2015-08-24 | 2015-12-02 | 中国科学院半导体研究所 | Nanometer vacuum triode structure with flip-chip-type anode, and preparation method |
-
2016
- 2016-02-24 CN CN201610102073.0A patent/CN105529356B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101636810A (en) * | 2006-12-29 | 2010-01-27 | 塞莱斯系统集成公司 | High frequency cold cathode triode-type field-emitter vacuum tube and manufacture process thereof |
| CN101971285A (en) * | 2007-12-28 | 2011-02-09 | 塞莱斯系统集成公司 | High frequency triode-type field emission device and process for manufacturing the same |
| CN103117199A (en) * | 2011-11-17 | 2013-05-22 | 浙江海洋学院 | Pine-shaped nanometer array field emitting negative pole manufacturing method |
| CN104299988A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院半导体研究所 | Nano vacuum triode with planar emitting cathode and manufacturing method thereof |
| CN105118762A (en) * | 2015-08-24 | 2015-12-02 | 中国科学院半导体研究所 | Nanometer vacuum triode structure with flip-chip-type anode, and preparation method |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10680112B2 (en) | 2015-09-30 | 2020-06-09 | Stmicroelectronics, Inc. | Gate all around vacuum channel transistor |
| US11664458B2 (en) | 2015-09-30 | 2023-05-30 | Stmicroelectronics, Inc. | Gate all around vacuum channel transistor |
| US11031504B2 (en) | 2015-09-30 | 2021-06-08 | Stmicroelectronics, Inc. | Gate all around vacuum channel transistor |
| US9853163B2 (en) | 2015-09-30 | 2017-12-26 | Stmicroelectronics, Inc. | Gate all around vacuum channel transistor |
| CN107359241B (en) * | 2016-05-10 | 2019-07-23 | 上海新昇半导体科技有限公司 | Vacuum nano pipe field effect transistor and its manufacturing method |
| CN107359242A (en) * | 2016-05-10 | 2017-11-17 | 上海新昇半导体科技有限公司 | Vacuum nano pipe field-effect transistor and its manufacture method |
| CN107359241A (en) * | 2016-05-10 | 2017-11-17 | 上海新昇半导体科技有限公司 | Vacuum nano pipe field-effect transistor and its manufacture method |
| US9793395B1 (en) | 2016-10-06 | 2017-10-17 | International Business Machines Corporation | Vertical vacuum channel transistor |
| US10431682B2 (en) | 2016-10-06 | 2019-10-01 | International Business Machines Corporation | Vertical vacuum channel transistor |
| CN108242444A (en) * | 2016-12-23 | 2018-07-03 | 上海新昇半导体科技有限公司 | Vacuum tube fet array and its manufacturing method |
| CN109037347A (en) * | 2018-07-28 | 2018-12-18 | 张玉英 | A kind of bismuth titanate film transistor and preparation method with sandwich structure |
| CN112713198A (en) * | 2020-12-30 | 2021-04-27 | 东南大学 | Vertical field emission triode based on carrier concentration regulation |
| CN113410110A (en) * | 2021-05-07 | 2021-09-17 | 南通职业大学 | Semiconductor vacuum diode |
| CN113410110B (en) * | 2021-05-07 | 2023-08-08 | 南通职业大学 | Semiconductor vacuum diode |
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