CN109031519B - A kind of narrow-band optical filter and all-optical diode - Google Patents
A kind of narrow-band optical filter and all-optical diode Download PDFInfo
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- CN109031519B CN109031519B CN201810850343.5A CN201810850343A CN109031519B CN 109031519 B CN109031519 B CN 109031519B CN 201810850343 A CN201810850343 A CN 201810850343A CN 109031519 B CN109031519 B CN 109031519B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/1213—Constructional arrangements comprising photonic band-gap structures or photonic lattices
Abstract
The invention discloses a kind of narrow-band optical filter and all-optical diodes.Narrow-band optical filter includes: the first, second photonic crystal panel；Wherein, the first, second photonic crystal panel is to be stacked alternately the 1-D photon crystal constituted by silicon layer in homogeneous thickness and silicon dioxide layer；First, second photonic crystal panel, which fits together to constitute, meets the 1-D photon crystal hetero-junctions of optical topology interfacial state shooting condition；The excitation of optical topology interfacial state shows as sharp transmission peaks occur in the common band gap of the first, second photonic crystal panel, and the transmissivity of two sides band remains as zero, to realize narrow-band filtering function；The central wavelength of transmission peaks is the operation wavelength of optical filter, and bandwidth is the bandwidth of operation of optical filter.All-optical diode includes above-mentioned filter and plane grating, and plane grating is fitted in one end of photon crystal heterojunction structure.Grating is used to control the excitation of topology interface state based on its diffraction to light, to realize the one-way transmission of light.
Description
Technical field
The present invention relates to the filtering techniques of light and one-way transmission technology, in particular to two pole of narrow-band optical filter and full light
Pipe, belongs to optic communication and optical oomputing field.
Background technique
All-optical diode be by using special optical material or by specific optical effect break optical transport when
Between inversion symmetry so that optical signal passes through in one direction, and then seldom or substantially unacceptable in the opposite direction, class
It is the key element for realizing optical oomputing, optical interconnection and ultrafast information processing like the electric diode in integrated circuit.
Currently, all-optical diode may be implemented based on magneto-optic effect, optical non-linear effect, Space-Time Modulation technology, however
Above-mentioned application background be required to all-optical diode low-power, be easily integrated under conditions of realize, therefore rely on strong-electromagnetic field
Magneto-optic effect and optical non-linear effect and need by external electric field realize modulation Space-Time Modulation technology application is not satisfied
It is required that.In consideration of it, realizing that all-optical diode becomes in linear non-magnetic optical system needs the target realized for this field.
The present invention realizes all-optical diode in linear non magnetic optical system, and realizes a kind of narrow band light filter simultaneously
Wave device.
Summary of the invention
In order to overcome the limitation of the prior art, the unique manipulation light that the present invention is possessed using optical topology interfacial state
The advantage of dissemination, the 1-D photon crystal based on two kinds of different structures constructs 1-D photon crystal heterojunction structure, at this
The excitation of optical topology interfacial state is realized in structure, to realize narrow-band optical filter；Meanwhile the present invention further utilizes
The excitation of optical topology interfacial state introduces grating, realizes the one-way transmission of light to the sensibility of incident light wave vector normal component,
That is all-optical diode.Narrow band optical filter provided by the invention and all-optical diode have compact structure, do not depend on high field, is easy
In integrated the advantages that.
Technical scheme is as follows:
A kind of narrow-band optical filter comprising:
First photonic crystal panel and the second photonic crystal panel；
Wherein, the first photonic crystal panel and the second photonic crystal panel are by silicon layer in homogeneous thickness and silica
Layer is stacked alternately and the 1-D photon crystal that constitutes, and the structural parameters of the first photonic crystal panel and the second photonic crystal panel
It is different；
Wherein, the first photonic crystal panel fits together with the second photonic crystal panel, and it is different to constitute 1-D photon crystal
Matter structure；
Wherein, the structure of the first photonic crystal panel and the second photonic crystal panel be designed to have positioned at similar frequency bands and
The mutually opposite band gap of topology, thus makes 1-D photon crystal heterojunction structure meet the condition that optical topology interfacial state excites, with
The optical topology interfacial state is excited in the common band gap of first photonic crystal panel and the second photonic crystal panel；Optical topology
The excitation of interfacial state shows as occurring sharply in the common band gap of the first photonic crystal panel and the second photonic crystal panel
Transmission peaks, and the transmissivity of transmission peaks two sides band remains as zero, to realize narrow-band filtering function；
Wherein, the central wavelength of transmission peaks is the operation wavelength of narrow-band optical filter, and the bandwidth of transmission peaks is narrowband
The bandwidth of operation of optical filter.
Preferably, the silicon layer thickness of the first photonic crystal panel is 0.680 μm, silicon dioxide layer thickness is 0.815 μm, week
Issue is 5；The silicon layer thickness of second photonic crystal panel is 0.685 μm, silicon dioxide layer thickness is 1.290 μm, the period is also
5；The refractive index of silicon is 2.82, and the refractive index of silica is 1.46；The operation wavelength of narrow-band optical filter be 1.53953 μm,
Bandwidth is 0.2nm, and the transmissivity of operating wave strong point is 80%.
A kind of all-optical diode comprising:
First photonic crystal panel, the second photonic crystal panel and plane grating；
Wherein, the first photonic crystal panel and the second photonic crystal panel are by silicon layer in homogeneous thickness and silica
Layer is stacked alternately and the 1-D photon crystal that constitutes, and the structural parameters of the first photonic crystal panel and the second photonic crystal panel
It is different；
Wherein, the first photonic crystal panel fits together with the second photonic crystal panel, and it is different to constitute 1-D photon crystal
Matter structure；
Wherein, the first photonic crystal panel is designed to have positioned at similar frequency bands and topological phase with the second photonic crystal panel
Thus opposite band gap makes 1-D photon crystal heterojunction structure meet the condition of optical topology interfacial state excitation, in the first light
Optics topology interface state is excited in the common band gap of sub- crystal plate and the second photonic crystal panel；The excitation table of optical topology state
Now to occur sharp transmission peaks in the common band gap of the first photonic crystal panel and the second photonic crystal panel, and transmission peaks
The transmissivity of two sides band remains as zero；
Wherein, plane grating is the one-dimensional plane grating being made of silicon materials, the direction in the period of plane grating and first
The period direction of photonic crystal panel and the second photonic crystal panel is vertical；
Wherein, plane grating fits together with the second photonic crystal panel, for the diffraction based on plane grating to light
Effect and the excitation for controlling topology interface state, to realize the one-way transmission of light.
Preferably, the silicon layer thickness of the first photonic crystal panel is 0.680 μm, silicon dioxide layer thickness is 0.815 μm, week
Issue is 5；The silicon layer thickness of second photonic crystal panel is 0.685 μm, silicon dioxide layer thickness is 1.290 μm, periodicity is
5；The refractive index of silicon is 2.82, and the refractive index of silica is 1.46；The screen periods of plane grating are 1.6 μm, the width of grizzly bar
Degree is 0.800 μm, with a thickness of 0.767 μm；From when the first photonic crystal panel side incidence, the transmission peak wavelength of all-optical diode is
1.53953 μm, transmissivity 90%, bandwidth 0.2nm；From when the incidence of plane grating side, the transmission of the all-optical diode
Rate is 2%.
The beneficial effects of the present invention are: can be realized simultaneously the narrow-band optical filter and Quan Guang of micro-nano size using the present invention
Diode, the two have that structure is simple, size is small, and parameter is flexibly adjustable, the advantages of being easily integrated.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of according to embodiments of the present invention 1 narrow-band optical filter；
Fig. 2 is the band structure figure of according to embodiments of the present invention 1 1-D photon crystal plate；
Fig. 3 is the transmissivity spectrum of according to embodiments of the present invention 1 1-D photon crystal plate；
Fig. 4 is the transmission spectrum of according to embodiments of the present invention 1 1-D photon crystal heterojunction structure；
Fig. 5 be according to embodiments of the present invention 1 photon crystal heterojunction structure normal orientation electric field strength and electric field it is opposite
Distribution of amplitudes；
Fig. 6 is the structural schematic diagram of according to embodiments of the present invention 2 all-optical diode；
Fig. 7 be according to embodiments of the present invention 2 all-optical diode it is forward and reverse incident when transmission spectrum；
Fig. 8 be according to embodiments of the present invention 2 all-optical diode it is forward and reverse incident when inside configuration distribution map of the electric field；
Fig. 9 be according to embodiments of the present invention 2 all-optical diode it is forward and reverse incident when normal orientation electric field relative amplitude
Distribution.
Specific embodiment
For a better understanding of the present invention, below with reference to the embodiment and attached drawing content that the present invention is further explained, but this
The content of invention is not limited to the following examples.
Embodiment 1: as shown in Figure 1, narrow-band optical filter proposed by the present invention includes:
First photonic crystal panel and the second photonic crystal panel；Wherein,
First, second photonic crystal panel is stacked alternately by silicon layer in homogeneous thickness and silicon dioxide layer and is constituted
1-D photon crystal, the design of Structural Parameters of the two at both make to have in band structure positioned at similar frequency bands and topology it is mutually opposite
Band gap；
First, second photonic crystal panel fits together, and constitutes 1-D photon crystal heterojunction structure；
The above-mentioned band structure of first, second photonic crystal panel 1-D photon crystal heterojunction structure meet optics to open up
It flutters the condition of interfacial state excitation and excites optics topology interface state in the common band gap of the first, second photonic crystal panel, performance
To there are sharp transmission peaks in the common band gap of the first, second photonic crystal, and the transmissivity of transmission peaks two sides band is still
It is zero, to realize narrow-band filtering function, the central wavelength of transmission peaks is the operation wavelength of narrow-band optical filter, transmission peaks
Bandwidth is the bandwidth of operation of narrow-band optical filter.
The band structure of 1-D photon crystal can be calculated based on its linear wave.Linear wave are as follows:
Wherein, q is the Bloch wave along silicon layer and silica layer interface normal orientation；Λ is 1-D photon crystal
Period；ki=niω/c,di,(i=1 or 2) is silicon layer (i=1) or silicon dioxide layer respectively
(i=2) wave vector, refractive index, thickness, impedance.Since silicon and silica are non-magnetic medium, μ in formulai=0.
In the present embodiment, the silicon layer thickness of the first photonic crystal panel is 0.680 μm, and silicon dioxide layer thickness is
0.815 μm, periodicity 5；The silicon layer thickness of second photonic crystal panel is 0.685 μm, and silicon dioxide layer thickness is 1.290 μ
M, period are also 5；The refractive index of silicon is 2.82, and the refractive index of silica is 1.46.
The band structure of the first, second photonic crystal panel is calculated separately according to above-mentioned linear wave, as a result such as Fig. 2 institute
Show.The Zak phase of each energy band is calculated by the method introduced in document [Phys.Rev.X 4 (2), 021017,2014], is counted
It calculates result to mark in figure, they are respectively 0 or π.Band gap is marked with number n (n=1,2 ... ...) as serial number.
The symbol of the topological phase of n-th of band gap is determined by the sum of the Zak phase of n-th of band gap all free bands below.Each band in figure
The symbol of gap topology phase is distinguished by color, and dark color represents topology and is mutually positive, and light color represents topology and is mutually negative.From figure
As can be seen that the 4th band gap of the first photonic crystal panel is consistent with the 5th band gap locations of the second photonic crystal panel, it
There is common band gap of the frequency between 0.6/ μm and 0.7/ μm, and topological phase symbol is on the contrary, the two is photonic crystal
The necessary condition that topology interface state excites in heterojunction structure.
Calculate separately the transmissivity of the first, second photonic crystal panel first using Fdtd Method (FDTD) method,
As a result as shown in figure 3, the transmission spectrum near the respective common band gap of the first, second photonic crystal panel is given in figure, from figure
In it can be seen that the band gap for being both zero with very wide, transmissivity, and transmissison characteristic and band structure feature meet very
It is good.
The first, second photonic crystal panel is further calculated using identical calculation method to fit together constituted one
The transmission spectrum of dimensional photonic crystal heterojunction structure, calculated result are as shown in Figure 4.Fig. 4 and Fig. 3 are compared as can be seen that two
The common band gap wave band of a photonic crystal panel, when their individualisms, transmissivity is zero, and after they fit together,
No longer it is zero, but is sharp transmission peaks occur at 1.53953 μm (0.64955/ μm of respective frequencies) in wavelength, this is thoroughly
The maximum value for penetrating peak is 80%, bandwidth 0.2nm.
The field distribution in the 1-D photon crystal heterojunction structure is calculated to analyze transmission peaks.Fig. 5 is normal incidence
When along the 1-D photon crystal heterojunction structure normal orientation electric field strength and electric field relative amplitude be distributed.For the ease of analyzing,
Depict the 1-D photon crystal heterojunction structure simultaneously in figure, and by distribution map of the electric field spatial position and the one-dimensional photon
Crystal heterojunction structure close alignment.From the graph, it is apparent that electric field focuses primarily upon the interface of two photonic crystal panels
Near.Compared with incident light, in interface, electric field amplitude enhances 20 times, and electric field strength enhances 400 times, this phenomenon card
The real presence of two photonic crystal panel interface topology interface states.Transmission peaks in Fig. 4 are flat from two photonic crystals
The excitation of topology interface state at board interface.In addition, the rectilinear oscillation structure of distribution of amplitudes, which is originated from, betides different dielectric stratum boundaries
Covibration caused by multiple reflections on face is similar to and resonates as caused by multiple Fabry-Perot-type cavities.
The shooting condition of lower surface analysis topology interface state.According to the prior art, on the boundary of two kinds of different 1-D photon crystals
The condition that face region forms topology interface state is: both 1-D photon crystals have positioned at identical wave band and opposite topological phase
Band gap.However, topology boundary state particularly occurs at wherein which wavelength then by table in the common band gap of two photonic crystals
Face impedance matching condition determines.Surface impedance matching condition are as follows:
Z1+Z2=1
Wherein, Z1, Z2 are the surface impedance of the first, second photonic crystal panel of interface the right and left respectively.In addition, Z1+
Z2=1 is equivalent to
|ri|=1,(m is integer) (i=1 or 2)
Wherein ri and(i=1 or 2) is respectively incident light first, second photon big through interface the right and left semo-infinite
Reflectivity and reflected phase when crystal plate reflects.According to transfer matrix method, the reflectivity of multilayer dielectric film is to incidence wave
The normal component of arrow is very sensitive.Therefore we concluded that the resonant wavelength of topology interface state and the normal component of wave vector
It is closely related.The resonant wavelength generated when by incident light normal incidence regards initial resonant wavelength as, if incidence angle makees minor change,
The normal component of wave vector will accordingly change, and resonant wavelength also changes correspondingly, then resonance condition will at initial resonant wavelength
No longer met, transmissivity also will be zero since band gap effect declines again.
According to above-mentioned analysis, when the 1-D photon crystal of two kinds of different structures has positioned at identical wave band and opposite topological phase
Band gap when, excited in the two interface topology interface state, transmission peaks occur in the resonance wave strong point of the common band gap of the two, when entering
When penetrating light comprising this resonant wavelength, this wavelength in incident light can with this configuration, other wavelength cannot then pass through, and utilize this
Principle realizes narrow-band optical filter.Again because the resonant wavelength of topology interface state is related with the normal component of incident light wave vector,
Therefore when the normal component of incident light wave vector changes with incident angle, the operation wavelength of filter will also be changed correspondingly.
Embodiment 2: as shown in fig. 6, all-optical diode proposed by the present invention includes:
Photon crystal heterojunction structure and plane grating in embodiment 1；
Wherein, plane grating is the one-dimensional plane grating being made of silicon materials, the direction in period and in embodiment 1 the
One, the period direction of the second photonic crystal panel is vertical；
Plane grating fits together with the second photonic crystal panel in embodiment 1, for based on its diffraction to light
Effect and the excitation for controlling topology interface state, to realize the one-way transmission of light.
In the present embodiment, plane grating changes the shooting condition of interfacial state by it to the diffraction effect of light.Work as incidence
Light is from when the incidence of plane grating side, and incident light will be diffracted into many directions, at this moment due to wave in most of diffraction direction
The normal component of arrow becomes smaller and the shooting condition of topology interface state is no longer satisfied, as a result the resonance effect of topology interface state
It should will become very faint, and transmit also corresponding acutely decrease.And when incident light is from the first photonic crystal panel side incidence,
The shooting condition of topology interface state is not affected, and wavelength is that the incident light of resonant wavelength will be heterogeneous by photonic crystal
Then structure is diffracted into the other side through plane grating.Therefore, when two sides normal incidence of the incident light from all-optical diode, transmission
Effect is entirely different, and the effect of one-way transmission is achieved.Grating diffration effect is stronger, and one-way transmission effect is better.
The cycle design of better diffracting effect in order to obtain, plane grating can at the resonant wavelength with topology interface state
Than that is, P=1.6 μm.The width and thickness of grizzly bar is separately optimized as W=0.800 μm and h=0.767 μm.Under these parameters,
On most of optical diffraction to the higher order of diffraction, and in these higher orders of diffraction, the normal component of wave vector can all reduce.It adopts
With above-mentioned parameter, the transmissivity when light of topology interface state resonance wave strong point is from two sides difference normal incidence to all-optical diode is as schemed
Shown in 7.From the graph, it is apparent that when incident (reversed incident) from plane grating side, in topology interface state resonant wavelength
At 1.53953 μm, initial sharp transmission peaks are completely disappeared, and transmissivity becomes small as the sideband in band gap, close to zero.Phase
Than under, when from the first photonic crystal panel incident (forward entrance), at 1.53953 μm of topology interface state resonant wavelength,
Transmissivity enhances to 90%, rather than is kept to zero, and the full width at half maximum of resonant transmission peak is about 0.2nm.If desired, can be with
Reduce the bandwidth of transmission peaks, but the transmissivity when incidence of two sides by the periodicity of two photonic crystals of increase interface two sides
Also can accordingly reduce.
In the case of Fig. 8 gives forward entrance, with topology interface state resonant wavelength from all-optical diode knot when the incidence of two sides
Field distribution in structure.Wherein, arrow indicates incident direction, and the region between two solid lines is photon crystal heterojunction structure, right
The solid-line rectangle of side indicates the position of grizzly bar.It will be apparent from this figure that when reversed incident, as analyzed above, two
Field Local Characteristic near a photonic crystal panel interface becomes very faint, the transmitted field of all-optical diode structure left part
It is obviously weaker than in-field, it means that incident light cannot penetrate the structure.However, topology interface state is obvious in forward entrance
Ground is present near the interface of two photonic crystal panels, also, the field distribution on the right side of the all-optical diode structure is also very
By force, almost can be compared with in-field, this illustrates that incident light has passed through the structure.Further, since grating diffration effect, output
It is interfered between the different orders of diffraction of end regions, causes Transmission field that apparent interference figure is presented.
In order to it is further more forward and reverse incident when transmissison characteristic, Fig. 9 gives the electricity in the structure along incident direction
The relative amplitude of field component is distributed, wherein and dotted line and dotted line respectively indicate forward entrance and reversed incident distribution of amplitudes, in order to
Convenient for comparison, when cannot not giving additionally grating with solid line simultaneously in figure in 1-D photon crystal heterojunction structure initial interface state vibration
Width distribution.From the graph, it is apparent that forward and reverse incidence gives entirely different field distribution.With when not additional grating
Distribution of amplitudes (black curve) is compared, and amplitude when reversed incident substantially reduces, and the field local effect of interface completely disappears；And
Field local effect when forward entrance enhances on the basis of initial interface state, the amplitude near two kinds of photonic crystal panel interfaces
Enhance 40%, the reason of enhancing is that for forward entrance, incident light is incident on plane grating from left side, and part light is anti-
It is mapped in 1-D photon crystal heterojunction structure, this is equivalent to the reflection coefficient for enhancing multilayer film.Similar to Fabry-Perot-type cavity
Resonance, reflection coefficient is higher, resonate it is stronger.Therefore, stronger interfacial state resonance is so that field local effect and transmissivity increase
By force.
In conclusion above-described embodiment is based on 1-D photon crystal heterojunction structure realizes narrow-band optical filter and complete simultaneously
Optical diode, since it is made of two 1-D photon crystal plates or two 1-D photon crystal plates with plane grating,
Therefore have that structure is simple, size is small, meet the integrated requirement of silicon-based nano photon chip.Moreover, because photonic crystal is heterogeneous
Interfacial state resonant wavelength, transmission peaks bandwidth and the grating diffration spectroscopic behaviour of structure determine by its structural parameters, therefore
The filter and all-optical diode of different operating wavelength, different bandwidth may be implemented based on this structure.
Although above having used general explanation and specific embodiment, the present invention is described in detail, at this
On the basis of invention, it can be made some modifications or improvements, this will be apparent to those skilled in the art.Therefore,
These modifications or improvements without departing from theon the basis of the spirit of the present invention are fallen within the scope of the claimed invention.
Claims (2)
1. a kind of narrow-band optical filter characterized by comprising
First photonic crystal panel and the second photonic crystal panel；
Wherein, first photonic crystal panel and second photonic crystal panel are by silicon layer in homogeneous thickness and dioxy
SiClx layer is stacked alternately and the 1-D photon crystal that constitutes, and first photonic crystal panel and second photonic crystal are flat
The structural parameters of plate are different；
Wherein, first photonic crystal panel fits together with second photonic crystal panel, and it is brilliant to constitute one-dimensional photon
Bulk heterojunction structure；
Wherein, the structure of first photonic crystal panel and second photonic crystal panel, which is designed to have, is located at same frequency
Section and topological mutually opposite band gap, thus make the 1-D photon crystal heterojunction structure meet the item of optical topology interfacial state excitation
Part, to excite the optical topology in the common band gap of first photonic crystal panel and second photonic crystal panel
Interfacial state；The excitation of the optical topology interfacial state is shown as in first photonic crystal panel and second photonic crystal
There are sharp transmission peaks in the common band gap of plate, and the transmissivity of transmission peaks two sides band remains as zero, thus real
Existing narrow-band filtering function；
Wherein, the central wavelength of the transmission peaks is the operation wavelength of the narrow-band optical filter, the bandwidth of the transmission peaks
The bandwidth of operation of the as described narrow-band optical filter；
Wherein:
The silicon layer thickness of first photonic crystal panel is 0.680 μm, silicon dioxide layer thickness is 0.815 μm, periodicity is
5；
The silicon layer thickness of second photonic crystal panel is 0.685 μm, silicon dioxide layer thickness is 1.290 μm, periodicity is
5；
The refractive index of silicon is 2.82, and the refractive index of silica is 1.46；
The operation wavelength of the narrow-band optical filter is 1.53953 μm, bandwidth 0.2nm, and the transmissivity of operating wave strong point is
80%.
2. a kind of all-optical diode characterized by comprising
First photonic crystal panel, the second photonic crystal panel and plane grating；
Wherein, first photonic crystal panel and second photonic crystal panel are by silicon layer in homogeneous thickness and dioxy
SiClx layer is stacked alternately and the 1-D photon crystal that constitutes, and first photonic crystal panel and second photonic crystal are flat
The structural parameters of plate are different；
Wherein, first photonic crystal panel fits together with second photonic crystal panel, and it is brilliant to constitute one-dimensional photon
Bulk heterojunction structure；
Wherein, first photonic crystal panel is designed to have positioned at similar frequency bands and open up with second photonic crystal panel
Mutually opposite band gap is flutterred, the 1-D photon crystal heterojunction structure is thus made to meet the condition of optical topology interfacial state excitation, with
The optical topology interface is excited in the common band gap of first photonic crystal panel and second photonic crystal panel
State；The excitation of the optical topology state shows as being total in first photonic crystal panel and second photonic crystal panel
With occurring sharp transmission peaks in band gap, and the transmissivity of transmission peaks two sides band remains as zero；
Wherein, the plane grating is the one-dimensional plane grating being made of silicon materials, the direction in the period of the plane grating with
The period direction of first photonic crystal panel and second photonic crystal panel is vertical；
Wherein, the plane grating fits together with second photonic crystal panel, is used to be based on the plane grating pair
The diffraction effect of light and the excitation for controlling the topology interface state, to realize the one-way transmission of light；
Wherein:
The silicon layer thickness of first photonic crystal panel is 0.680 μm, silicon dioxide layer thickness is 0.815 μm, periodicity is
5；
The silicon layer thickness of second photonic crystal panel is 0.685 μm, silicon dioxide layer thickness is 1.290 μm, periodicity is
5；
The refractive index of silicon is 2.82, and the refractive index of silica is 1.46；
The screen periods of the plane grating are 1.6 μm, and the width of grizzly bar is 0.800 μm, with a thickness of 0.767 μm；
From when first photonic crystal panel side incidence, the transmission peak wavelength of the all-optical diode is 1.53953 μm, transmits
Rate is 90%, bandwidth 0.2nm；From when the plane grating side incidence, the transmissivity of the all-optical diode is 2%.
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| CN113777674B (en) * | 2021-09-06 | 2022-11-08 | 湖北科技学院 | Photonic crystal structure capable of realizing optical frequency comb |
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| CN114660680B (en) * | 2022-03-22 | 2023-08-15 | 广东工业大学 | Photonic crystal structure design method with topological interface state |
| CN114740640B (en) * | 2022-04-22 | 2024-01-26 | 中国矿业大学 | Multichannel mid-infrared optical filter based on phase change material |
| CN114942485A (en) * | 2022-05-16 | 2022-08-26 | 南京大学 | Self-filtering superconducting nanowire single photon detector |
| CN115291324B (en) * | 2022-07-08 | 2023-05-26 | 中国地质大学（武汉） | Silicon-based all-optical diode |
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| WO2003034113A2 (en) * | 2001-10-19 | 2003-04-24 | Nkt Research & Innovation A/S | Integrated photonic crystal structure and method of producing same |
| US6859321B2 (en) * | 2002-03-29 | 2005-02-22 | Massachusetts Institute Of Technology | Low voltage tunable photonic crystal with large defects as wavelength routing |
| CN101431109B (en) * | 2008-12-03 | 2010-06-02 | 中国科学技术大学 | One-dimensional silicon/silicon dioxide photon crystal filter |
| CN101598883B (en) * | 2009-07-03 | 2011-06-22 | 北京邮电大学 | Implementation method of multi-defective one-dimensional photonic crystal all-optical switch with stable and controllable output state |
| CN202735536U (en) * | 2012-05-21 | 2013-02-13 | 河南科技大学 | Undoped layer photonic crystal optical filter with filtering scope from 430 to 630nm |
| CN102681069B (en) * | 2012-06-07 | 2013-12-25 | 太原理工大学 | One-dimensional photonic crystal full visible spectrum single-channel ultra-narrow band filter |
| CN104007496B (en) * | 2014-05-19 | 2016-05-25 | 河南科技大学 | A kind of photonic crystal filtering eyeglass and preparation method thereof |
| CN105842785A (en) * | 2016-05-20 | 2016-08-10 | 燕山大学 | Multichannel filter based on chirp porous silicon photonic crystal |
| CN106896434B (en) * | 2017-03-20 | 2023-09-08 | 南京邮电大学 | All-optical diode |
| CN107976733B (en) * | 2017-11-24 | 2021-02-09 | 苏州大学 | All-dielectric polarization-independent angle filter |
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