CN108828716A - A kind of all-optical diode - Google Patents
A kind of all-optical diode Download PDFInfo
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- CN108828716A CN108828716A CN201810628837.9A CN201810628837A CN108828716A CN 108828716 A CN108828716 A CN 108828716A CN 201810628837 A CN201810628837 A CN 201810628837A CN 108828716 A CN108828716 A CN 108828716A
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- photonic crystal
- crystal panel
- optical diode
- plane grating
- zero
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/1213—Constructional arrangements comprising photonic band-gap structures or photonic lattices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a kind of all-optical diodes, are related to full light asymmetric transmission technology.It includes：Photonic crystal panel and plane grating.Wherein, photonic crystal panel is placed in parallel with plane grating；Photonic crystal panel has the band structure of double dirac cones, and double dirac cones intersect at dirac point, and dirac point is located at the Brillouin zone center of photonic crystal panel, and at the frequency of dirac point, the equivalent refractive index of photonic crystal panel is zero；The frequency for being incident on the optical signal of all-optical diode is the frequency of dirac point；The thickness of plane grating is arranged to make the light intensity zero of optical signal zero-order diffraction light in plane grating side vertical incidence.When optical signal is from plane grating side vertical incidence, transmissivity is close to zero；When from photonic crystal panel side vertical incidence, transmissivity is close to 1.Have structure simple using the all-optical diode that the present invention realizes；Forward and reverse transmiting contrast degree is high；Positive transmissivity is high；No high field requirement；The advantages of being easily integrated.
Description
Technical field
The present invention relates to full light asymmetric transmission technology, in particular to a kind of all-optical diode belongs to optic communication and photometry
Calculate technical field.
Background technique
All-optical diode is a kind of important micronano optical device, and asymmetric transmittance structure makes optical signal in one direction
Pass through, and in the opposite direction then by seldom or not passing through substantially, in short, being exactly the one-way transmission for realizing light.As
Traditional integrated circuit system operations function needs this primary element of electric diode the same, and All-optical signal calculation process is also be unable to do without
Optical signal can be made to meet the unit of asymmetric transmission, i.e., so-called all-optical diode.Therefore, all-optical diode optical oomputing,
The fields such as optical interconnection and ultrafast information processing are all with important application prospects.
For the asymmetric transmission for realizing light, key is the Time-reversal symmetry of optical transport to be broken, this can be by magnetic
Luminescent material or nonlinear optical effect realize that however, these methods not only need high-intensity magnetic field or strong laser field, but also equipment is huge
It is complicated, it is difficult to it is integrated to adapt to silicon-based nano photon chip.Therefore, the all-optical diode for developing the micro/nano-scale adapted to therewith becomes
One important problem for needing to overcome.
Summary of the invention
To overcome the shortcomings of above-mentioned technology, the purpose of the present invention is to provide a kind of all-optical diode, the full light two of realization
Pole pipe structure is simple, is easily integrated, and avoids the use of high-intensity magnetic field and strong electrical field.
Technical scheme is as follows：
A kind of all-optical diode comprising：
Photonic crystal panel and plane grating；Wherein,
Photonic crystal panel is placed in parallel with plane grating；
Photonic crystal panel has the band structure of double dirac cones, and double dirac cones intersect at dirac point, dirac
Point is located at the Brillouin zone center of photonic crystal panel, at the frequency of dirac point, the equivalent refraction of photonic crystal panel
Rate is zero；
The frequency for being incident on the optical signal of all-optical diode is the frequency of dirac point；
The thickness of plane grating is arranged to make the light intensity of optical signal zero-order diffraction light in plane grating side vertical incidence
It is zero.
Optionally, photonic crystal panel has by the cylindrical shell triangular crystal lattice structure arranged in parallel constituted, between cylindrical shell
Distance be lattice constant, cylindrical shell is made of dielectric substance.
Optionally, the outermost layer cylindrical shell at photonic crystal panel surface has towards the unification on the outside of photonic crystal panel
The notch of size, to realize that the surface impedance of photonic crystal panel is matched with the external world.
Optionally, the lattice constant of photonic crystal panel is 0.500 μm, and the outer radius of cylindrical shell is 0.225 μm, inside radius
For 0.133 μm, dielectric constant 12, the part other than photonic crystal panel interior cylindrical shell is air, and above-mentioned notch is along photon crystalline substance
The size in body slab-thickness direction is 0.029 μm.
Preferably, plane grating is one-dimensional grating；
The screen periods of plane grating are 3 μm, and the refractive index of grizzly bar is 1.4, with a thickness of 1.62 μm, fill factor 0.5.
Preferably, when optical signal is from plane grating side vertical incidence, the transmissivity through all-optical diode is (small close to zero
In 5%).
Preferably, when optical signal is from photonic crystal panel side vertical incidence, the transmissivity through all-optical diode is close to 1
(being greater than 95%).
The beneficial effects of the invention are as follows：The all-optical diode of micro-nano size may be implemented using the present invention, and be based on magneto-optic
Material is compared with the all-optical diode of nonlinear optical effect, simple with structure；Forward and reverse transmiting contrast degree is high；It is positive
Transmissivity is high；No high field requirement；The advantages of being easily integrated.
Detailed description of the invention
Fig. 1 is all-optical diode structural schematic diagram according to an embodiment of the present invention, wherein figure (a) is the whole of all-optical diode
Body schematic diagram；Scheme the cross-sectional structure schematic diagram that (b) is all-optical diode；
Fig. 2 is the energy band diagram of photonic crystal panel according to an embodiment of the present invention, and figure center is the knot of photonic crystal panel
Structure schematic diagram and structure size；
Fig. 3 is the transmittance graph figure of photonic crystal panel according to an embodiment of the present invention；
Fig. 4 is the distribution map of the electric field in all-optical diode according to an embodiment of the present invention, wherein figure (a) is optical signal from light
Distribution map of the electric field when sub- crystal plate side vertical incidence, figure (b) be optical signal from plane grating side vertical incidence when
Distribution map of the electric field.
Specific embodiment
For a better understanding of the present invention, below with reference to the embodiment and attached drawing content that the present invention is further explained, but this
The content of invention is not limited to the following examples.
As shown in Fig. 1 (a), in the present embodiment, a kind of all-optical diode includes two parts：
Photonic crystal panel and plane grating；Wherein：
Photonic crystal panel is placed in parallel with plane grating；
Photonic crystal panel is with by cylindrical shell, the triangular crystal lattice structure arranged in parallel constituted, cross section are such as schemed in air
Shown in 1 (b).The distance between cylindrical shell be lattice constant a, change lattice constant a, the inside radius r of cylindrical shell, outer radius R and
Permittivity ε, thus it is possible to vary the band structure of photonic crystal panel.By well-designed above-mentioned parameter, make photonic crystal panel
Band structure with double dirac cone, and the intersection point (referred to as dirac point) of double dirac cone is located at photonic crystal panel
At the center (Γ point) of Brillouin zone, to realize that the refractive index of photonic crystal panel is zero, i.e., at the frequency of dirac point
Photonic crystal panel is designed as zero refraction materials.
When light transmits in zero refraction materials, field strength and phase are unchanged with spread length, therefore light wave will not decline
Subtract, will not distort, is also based on this reason, the thickness of photonic crystal panel is not limited in any way in the present embodiment, but be
Its band structure is kept, the number of plies of cylindrical shell also should be very little, and typically no less than 5.
Fig. 2 is the photon for the TE wave (electric field component is parallel with the axis of cylindrical shell) being calculated using commercialization FDTD software
The band structure of double dirac cone of crystal plate.Wherein the lattice constant of photonic crystal is taken as a=0.5 μm, cylindrical shell it is interior
Radius is taken as r=0.2656a, outer radius is taken as R=0.45a, dielectric constant is taken as ε=12, and the number of plies of cylindrical shell is taken as 26.From
As can be seen that dirac point is placed exactly in the center (Γ point) of Brillouin zone in Fig. 2, while based on data in figure, we are obtained
Wavelength at dirac dot frequency is 1.2387 μm.
Zero refraction materials have a very unique property, i.e., incident light is only in low-angle incidence i.e. close to vertical
It could penetrate when incident, can be then totally reflected in large angle incidence.This property can be applied to zero folding by snell law
The rate material of penetrating immediately arrives at.This angular selectivity when light wave transmissions is to examine whether the refractive index of photonic crystal is zero to have
Efficacious prescriptions method.
We calculate the transmissivity of the photonic crystal panel with energy band shown in Fig. 2 below.Before the computation, it needs to examine
Whether the surface impedance for considering photonic crystal panel matches with the external world, and only in the event of a match, incident light could be penetrated effectively
Enter photonic crystal panel.It, can will be at surface if it does not match, need to handle the both side surface of photonic crystal panel
Outermost layer cylindrical shell cuts away certain thickness δ (shown in such as Fig. 1 (b)) along surface, this thickness is related with extraneous medium.In this implementation
In example, the external world is air, and the surface impedance of photonic crystal panel and air mismatch, and in order to realize matching, we are by two sides table
Outermost layer cylindrical shell cuts away 0.029 μm at face, and calculating discovery realizes the perfect matching of photonic crystal panel and air.It will be incident
Optical wavelength is taken as 1.2387 μm of the wavelength at dirac dot frequency, and the transmitance under the conditions of different incidence angles is calculated in we,
As shown in Figure 3.Transmittance graph shown in Fig. 3 show incidence angle it is sufficiently small (<5o) the case where, the transmission of photonic crystal panel
Rate approximation is unit 1, and with the increase of incidence angle, transmissivity declines rapidly, is 5 in incidence angleoWhen, transmissivity has reached zero,
This rule meets very well with ideal zero refraction materials, this shows that the photonic crystal panel with energy band shown in Fig. 2 is
Zero refraction materials.
It combines the photonic crystal panel with zero refractive index with plane grating, while flat using zero refractive index photonic crystal
Angular selectivity and grating diffration the light splitting property of plate transmissivity, may be implemented the one-way transmission of light, i.e. all-optical diode.
The thickness of plane grating is arranged to make to have zero level of the optical signal of frequency at dirac point in vertical incidence to be spread out
Penetrating light is zero, so that the intensity of diffraction light all focuses in high diffracting grade.Diffraction light oblique incidence from high diffracting grade
It onto photonic crystal panel, is as a result all reflected, therefore, the light intensity transmitted from photonic crystal panel is zero；And when light is believed
When number from the photonic crystal panel side vertical incidence of all-optical diode, it is brilliant that optical signal passes through photon first with very high transmissivity
Body plate, is then diffracted into the other side through plane grating.As it can be seen that the two sides vertical incidence opposite from all-optical diode when optical signal
When, it may appear that completely different transmission effects, it is thus achieved that the function of unidirectional light passing.
Plane grating in this implementation can be one-dimensional grating, or two-dimensional grating.For the sake of simplicity, preferably one-dimensional
Grating, shown in cross-sectional structure schematic diagram such as Fig. 1 (b), screen periods d, grizzly bar refractive index is n, and grating fill-factor is
α.In the case where above-mentioned grating parameter is selected, selects grizzly bar with a thickness of h meticulously, plane grating may be implemented in dirac point frequency
The light intensity of zero-order diffraction light at rate is zero.
Fig. 4 is the field distribution on a screen periods d width in the present embodiment in all-optical diode.Fig. 4 (a) is light
Field distribution when signal (1.2387 μm of wavelength, be located at dirac dot frequency) is by photonic crystal panel side vertical incidence,
Field distribution when Fig. 4 (b) is optical signals plane grating side vertical incidence.Arrow indicates the incidence side of optical signal in figure
To rectangle indicates the position of plane grating grizzly bar, and the part between two dotted lines is photonic crystal panel.In calculating, planar light
The screen periods of grid are taken as d=3 μm, and grizzly bar refractive index is taken as n=1.4, and grating fill-factor is taken as α=0.5.To ensure plane
The light intensity of zero-order diffraction light of the grating at dirac dot frequency is zero, and the grizzly bar thickness of plane grating is taken as h=1.62 μm.From
The corresponding light passing rate of field distribution in Fig. 4 (a), (b) is 97% and 0.34%, it can thus be seen that in the present embodiment
All-optical diode realize the function of unidirectional light passing.
In conclusion the all-optical diode that the present embodiment is realized, since it is only flat by one piece of photonic crystal panel and one piece
Concave grating is constituted, therefore has that structure is simple, size is small, meets the integrated requirement of silicon-based nano photon chip.Moreover, because light
Sub- crystal plate is designed to zero refraction materials, and the transmissivity of zero refraction materials has a stringent angular selectivity, and light
The diffraction spectroscopic behaviour of grid can also realize that the ingenious combination of the two is realized by the flexible modulation of its structural parameters completely
The forward and reverse transmiting contrast degree of all-optical diode is high；The high excellent performance of positive transmissivity.
It should be strongly noted that plane grating is one-dimensional medium grating in the present embodiment, two-dimensional grating also be may be implemented
Above-mentioned technical requirements；Photonic crystal panel have by medium cylindrical shell in air background the triangular crystal lattice knot arranged in parallel constituted
Structure, for other lattice structures being placed in other medium backgrounds, as long as can make photonic crystal panel that there are double dirac cones
Band structure, and refractive index is zero, and the present invention also may be implemented, and pays attention to detecting the surface of photonic crystal panel in application
Whether impedance matches with extraneous medium, if it does not match, must handle two sides of photonic crystal panel.
It will be appreciated by those skilled in the art that institute of the present invention on the basis of the technology contents that above-described embodiment is illustrated
The shear deformation or combination made, as the protection scope of the claims in the present invention.
Claims (7)
1. a kind of all-optical diode, which is characterized in that including：
Photonic crystal panel and plane grating；Wherein,
The photonic crystal panel is placed in parallel with the plane grating；
The photonic crystal panel has the band structure of double dirac cones, and double dirac cones intersect at dirac point, institute
Dirac point is stated to be located at the Brillouin zone center of the photonic crystal panel, at the frequency of the dirac point, the light
The equivalent refractive index of sub- crystal plate is zero；
The frequency for being incident on the optical signal of the all-optical diode is the frequency of the dirac point；
The thickness of the plane grating is arranged to make optical signal Zero-order diffractive in the plane grating side vertical incidence
The light intensity of light is zero.
2. all-optical diode as described in claim 1, which is characterized in that wherein,
The photonic crystal panel has by the cylindrical shell triangular crystal lattice structure arranged in parallel constituted, between the cylindrical shell away from
From for lattice constant, the cylindrical shell is made of dielectric substance.
3. all-optical diode as claimed in claim 2, which is characterized in that wherein,
Cylindrical shell described in outermost layer at the photonic crystal panel surface has towards the system on the outside of the photonic crystal panel
The notch of one size, to realize that the surface impedance of the photonic crystal panel is matched with the external world.
4. all-optical diode as claimed in claim 3, which is characterized in that wherein,
The lattice constant is 0.500 μm, and the outer radius of the cylindrical shell is 0.225 μm, inside radius is 0.133 μm, dielectric is normal
Number is 12, and the part in the photonic crystal panel other than the cylindrical shell is air, and the notch is flat along the photonic crystal
The size of plate thickness direction is 0.029 μm.
5. all-optical diode as claimed in claim 4, which is characterized in that wherein,
The plane grating is one-dimensional grating；
The screen periods of the plane grating are 3 μm, and the refractive index of grizzly bar is 1.4, with a thickness of 1.62 μm, fill factor 0.5.
6. all-optical diode as claimed in claim 5, which is characterized in that wherein,
When the optical signal is from the plane grating side vertical incidence, the transmissivity through the all-optical diode is close to zero
(less than 5%).
7. all-optical diode as claimed in claim 5, which is characterized in that wherein,
When the optical signal is from the photonic crystal panel side vertical incidence, the transmissivity through the all-optical diode close to
1 (being greater than 95%).
Priority Applications (1)
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| CN201810628837.9A CN108828716A (en) | 2018-06-19 | 2018-06-19 | A kind of all-optical diode |
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| CN201810628837.9A CN108828716A (en) | 2018-06-19 | 2018-06-19 | A kind of all-optical diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU200579U1 (en) * | 2020-07-13 | 2020-10-29 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет геосистем и технологий" (СГУТиТ) | Fully dielectric optical diode |
| WO2022016380A1 (en) * | 2020-07-21 | 2022-01-27 | 深圳市速腾聚创科技有限公司 | Laser radar and autonomous driving device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090086322A1 (en) * | 2005-05-16 | 2009-04-02 | Northeastern University | Photonic Crystal Devices Using Negative Refraction |
| CN101840025A (en) * | 2010-05-05 | 2010-09-22 | 北京大学 | Linear photon crystal device |
| CN101915964A (en) * | 2010-07-20 | 2010-12-15 | 南京大学 | Optical diode based on asymmetrical metal double-gate structure |
| CN107422406A (en) * | 2017-07-25 | 2017-12-01 | 华侨大学 | A kind of uni-directional light flow device and design method based on double dirac points |
-
2018
- 2018-06-19 CN CN201810628837.9A patent/CN108828716A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090086322A1 (en) * | 2005-05-16 | 2009-04-02 | Northeastern University | Photonic Crystal Devices Using Negative Refraction |
| CN101840025A (en) * | 2010-05-05 | 2010-09-22 | 北京大学 | Linear photon crystal device |
| CN101915964A (en) * | 2010-07-20 | 2010-12-15 | 南京大学 | Optical diode based on asymmetrical metal double-gate structure |
| CN107422406A (en) * | 2017-07-25 | 2017-12-01 | 华侨大学 | A kind of uni-directional light flow device and design method based on double dirac points |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU200579U1 (en) * | 2020-07-13 | 2020-10-29 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет геосистем и технологий" (СГУТиТ) | Fully dielectric optical diode |
| WO2022016380A1 (en) * | 2020-07-21 | 2022-01-27 | 深圳市速腾聚创科技有限公司 | Laser radar and autonomous driving device |
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Application publication date: 20181116 |