CN202735536U - Undoped layer photonic crystal optical filter with filtering scope from 430 to 630nm - Google Patents

Undoped layer photonic crystal optical filter with filtering scope from 430 to 630nm Download PDF

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Publication number
CN202735536U
CN202735536U CN 201220228547 CN201220228547U CN202735536U CN 202735536 U CN202735536 U CN 202735536U CN 201220228547 CN201220228547 CN 201220228547 CN 201220228547 U CN201220228547 U CN 201220228547U CN 202735536 U CN202735536 U CN 202735536U
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photonic crystal
layer
medium
monochromatic light
optical filter
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李萍
胡志刚
雷万军
杨晓利
宋霄薇
乔晓岚
娄丽敏
张瑞
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Henan University of Science and Technology
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Henan University of Science and Technology
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Abstract

Provided is an undoped layer photonic crystal optical filter with a filtering scope from 430 to 630nm. The filter comprises a photonic crystal layer and lens glass. The photonic crystal layer is arranged on a surface of the lens glass. The photonic crystal layer is of an (AB) 5 (BA) 5 type composite structure formed by mutual and alternative superposition of ten A dielectric layers and ten B dielectric layers. Through simulation of a transmission characteristic curve of a photonic crystal one-dimensional by utilization of a transmission matrix method, the photonic crystal optical filter with an undoped structure is designed on a basis of theoretical analysis. A simple undoped photonic crystal structure is adopted and sequences of photonic crystal plated films are changed only once, thereby substantially minimizing difficulties of processing and requirements about precision. According to the filter, an appropriate photonic crystal structure parameter is selected based on a frequency of monochromatic light needing to transmit, transmission of the monochromatic light is realized, and the one-dimensional optical filter enables transmittance of the monochromatic light with the selected frequency to reach 100%. A mature plated film technology allows the one-dimensional photonic crystal films to be processed on a surface of an optical lens. The undoped layer photonic crystal optical filter can be widely applied to an optical apparatus that needs monochromatic light of various kinds to transmit.

Description

The non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm
Technical field
The utility model relates to the photonic crystal field, is specifically related to realize the 1-D photon crystal optical filter of selected frequency monochromatic light high transmission and the method for making of this wave filter thereof.
Background technology
When how research suppresses spontaneous radiation and S.John during at research photon local respectively since the independent concept that proposes photonic crystal, the structure of photonic crystal, preparation and quantum electrodynamics characteristic research began to enjoy people to pay close attention to and studied widely from E.Yablonovitch in 1987.Early stage most research work all is to concentrate on the two and three dimensions photonic crystal, until Fink in 1998, Winn, the people's such as Chigrin work has just begun the research of 1-D photon crystal.1-D photon crystal is simple in structure, is easy to make, and also possesses the character of high dimensional photonic crystal simultaneously, is widely used.
It is that in a single day this strict periodic structure is damaged because of the strict periodic distribution of its refractive index that photonic crystal band forms, and the transport property of photonic crystal will change.Common 1-D photon crystal wave filter all is the photonic crystal that adopts doped structure, introduce wittingly specific doping defective and change the strict periodic structure of photonic crystal, it is unstable to plant thus the filter construction that photonic crystal makes, filter effect is not obvious, can not extensively make, and be promoted.
The utility model content
The utility model is for solving the problems of the technologies described above, and provides to adopt simple non-impurity-doped photon crystal structure, just changed the plated film order one time, greatly reduces difficulty of processing and to the requirement of precision.The monochromatic light frequency that sees through is as required selected suitable photon crystal structure parameter, realize the wave filter that monochromatic light sees through, selected frequency monochromatic light transmitance is reached 100% filter effect, adopt simple non-impurity-doped photon crystal structure, just change plated film order, greatly reduced difficulty of processing and to the requirement of precision.The monochromatic light frequency that sees through is as required selected suitable photon crystal structure parameter, realizes the wave filter that monochromatic light sees through, and selected frequency monochromatic light transmitance is reached 100% filter effect.
The utility model is to solve the problems of the technologies described above the technical scheme that adopts to be: the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm, wave filter comprises layer of photonic crystals and lens element, layer of photonic crystals is arranged on the lens element surface, and layer of photonic crystals is mutually alternately superposeed by 10 layers of A dielectric layer and 10 layers of B dielectric layer and consists of (AB) 5(BA) 5Type composite structure, described A are gallium arsenide, and B is silicon dioxide, wherein (AB) 5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on the inboard of layer of photonic crystals, and is connected with lens element; Wherein (BA) 5Represent the compound medium layer of alternately stack formation of 5 layers of B medium and A medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on the layer of photonic crystals outside.
The refractive index of A dielectric layer described in the utility model is
Figure DEST_PATH_799351DEST_PATH_IMAGE001
, the refractive index of B dielectric layer is
Figure DEST_PATH_723313DEST_PATH_IMAGE002
, centre wavelength is got 532nm.
The beneficial effects of the utility model are:
1, adopts simple non-impurity-doped photon crystal structure, just changed the plated film order one time, greatly reduce difficulty of processing and to the requirement of precision.The monochromatic light frequency that sees through is as required selected suitable photon crystal structure parameter, realizes the wave filter that monochromatic light sees through, and selected frequency monochromatic light transmitance is reached 100% filter effect.
2, the non-impurity-doped photon crystal structure has changed and introduces wittingly specific doping defective and change the strict periodic structure of photonic crystal, can make photonic crystal band fully and change the 1-D photon crystal wave filter of making characteristic frequency.
Description of drawings
Fig. 1 is structural representation of the present utility model;
Fig. 2 structure
Figure DEST_PATH_RE-DEST_PATH_IMAGE003
Transmitance with the wavelength variations curve;
Fig. 3 structure
Figure DEST_PATH_184381DEST_PATH_IMAGE004
Transmitance with the wavelength variations curve;
Among the figure: 1, layer of photonic crystals, 2, lens element.
Embodiment
As shown in the figure, the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm, wave filter comprises layer of photonic crystals 1 and lens element 2, and layer of photonic crystals 1 is arranged on lens element 2 surfaces, and layer of photonic crystals 1 is mutually alternately superposeed by 10 layers of A dielectric layer and 10 layers of B dielectric layer and consists of (AB) 5(BA) 5Type composite structure, described A are gallium arsenide, and B is silicon dioxide, wherein (AB) 5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on the inboard of layer of photonic crystals 1, and is connected with lens element 2; Wherein (BA) 5Represent the compound medium layer of alternately stack formation of 5 layers of B medium and A medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on layer of photonic crystals 1 outside.
The refractive index of described A dielectric layer is
Figure DEST_PATH_DEST_PATH_IMAGE005
, the refractive index of B dielectric layer is
Figure DEST_PATH_801176DEST_PATH_IMAGE006
, centre wavelength is got 532nm.
The method for making of the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm,
Step 1, get a lens element as substrate, with the substrate twin polishing, for subsequent use;
Step 2, the substrate surface that processes is cleaned processing, adopt respectively cleaning base plate of acidic cleaning solution and deionized water, then substrate is placed on the hot plate and dry, 65 ° of temperature, 10 minutes time;
Step 3, substrate is put into vacuum coating equipment, carry out the plated film of A medium, gallium arsenide refractive index in one surface
Figure DEST_PATH_980485DEST_PATH_IMAGE005
, when centre wavelength was got 532nm, its coating film thickness was
Figure DEST_PATH_DEST_PATH_IMAGE007
, i.e. 38.118nm, dry cooling is 30 minutes behind the plated film, then carries out the plated film of B medium on the surface that substrate is coated with the A media coating, the refractive index of silicon dioxide , when centre wavelength was got 532nm, its coating film thickness was , i.e. 59.9nm, dry cooling is 30 minutes behind the plated film;
Step 4, according to the method for step 3 hocket A medium and B medium plated film, until 4 layers of A media coating of plating and 4 layers of B media coating in substrate formation structure are
Figure DEST_PATH_23713DEST_PATH_IMAGE010
Photonic crystal Composite Coatings rete;
Step 5, photon crystal structure plated film be
Figure DEST_PATH_DEST_PATH_IMAGE011
Board structure on proceed the plated film of A medium gallium arsenide, thickness is 38.118nm, dry cooling 30 minutes forms structure at substrate and is Photonic crystal Composite Coatings rete;
Step 6, on substrate photon crystal structure plated film be
Figure DEST_PATH_212435DEST_PATH_IMAGE012
Structure on carry out the plated film of B medium silicon dioxide, thickness is 119.8nm, is the thickness of two-layer B medium, i.e. the lower two-layer B medium of plating once forms structure at substrate and is
Figure DEST_PATH_DEST_PATH_IMAGE013
Photonic crystal Composite Coatings rete;
Step 7, according to the method for step 3 hocket A medium and B medium plated film, until 5 layers of A media coating of plating and 4 layers of B media coating in substrate formation structure are
Figure DEST_PATH_478200DEST_PATH_IMAGE004
Photonic crystal Composite Coatings rete, make the surface and be provided with
Figure DEST_PATH_976178DEST_PATH_IMAGE004
The wave filter of photon crystal structure.
Vacuum coating equipment of the present utility model adopts DM-450 type vacuum coating equipment, bell jar size: Φ 450 mm * 540 mm, and end vacuum :≤6.5 * 10-4 Pa, bleed the time: when vacuum tightness reaches 1.3 * 10-3 Pa, t≤50 min.
Film plating process of the present utility model can be realized at heavy plumbous x-ray protection surface layer of glass plated film by modern vacuum ion plating method, vacuum magnetic-control sputtering method, vacuum vapor deposition method, chemical gaseous phase deposition method, sol-gel processing and hot-pressing technique.
The utility model with transfer matrix method emulation the transfer curve of 1-D photon crystal, designed a kind of photon crystal optics wave filter of non-impurity-doped structure on the basis of theory analysis, the photonic crystal of this non-impurity-doped structure has just changed the plated film order one time, but destructive the same very large to the periodic structure of photonic crystal, produced Defect Modes.Structure is respectively
Figure DEST_PATH_685508DEST_PATH_IMAGE014
With
Figure DEST_PATH_823097DEST_PATH_IMAGE004
, the variation of this structure of simulation study is on the impact of photonic crystal transport property.
A is gallium arsenide, and B is silicon dioxide:
Figure DEST_PATH_DEST_PATH_IMAGE015
,
Figure DEST_PATH_643285DEST_PATH_IMAGE016
, refractive index is respectively
Figure DEST_PATH_995769DEST_PATH_IMAGE005
, , the photonic crystal thickness of dielectric layers is respectively:
Figure DEST_PATH_62951DEST_PATH_IMAGE018
,
Figure DEST_PATH_500886DEST_PATH_IMAGE019
, centre wavelength is got 532nm.
Simulation result as shown in drawings.Can see obviously that from accompanying drawing 2 periodicity is 10 the strict periodic structure of photonic crystal
Figure DEST_PATH_DEST_PATH_IMAGE020
At 460 ~ 630nm obvious forbidden photon band is arranged, the light transmission rate of forbidden band Mid Frequency is almost nil, and Properties Forbidden Band is very obvious.When plated film of structural change sequentially becomes The time, can see obviously that from accompanying drawing 3 the photonic crystal band medium frequency equals centre wavelength The position on Defect Modes has appearred, transmitance sharply is increased to 1 from 0, has realized the monochromatic light of the wavelength 532nm of selected center is filtered.
Transfer matrix method (Transfer Matrix Method, TMM) essence is in the space Maxwell equation to be done finite difference, then it is become the form of transmission matrix.Be converted into the eigenvalue Solve problems finding the solution photonic band gap calculating.The Maxwell system of equations is done discretize, and the relation between the field in adjacent two layers space can represent with a transmission matrix.Transmission matrix can connect the Electric and magnetic fields on another aspect of the Electric and magnetic fields on the aspect and next-door neighbour, so it can be extrapolated to whole photonic crystal space.Thereby calculate transmission coefficient and the reflection coefficient of photonic crystal.
For the 1-D photon crystal periodic structure, have:
Figure DEST_PATH_RE-DEST_PATH_IMAGE022
（1）
By
Figure DEST_PATH_819106DEST_PATH_IMAGE023
Can obtain:
Reflection coefficient:
Figure DEST_PATH_744337DEST_PATH_IMAGE024
(2)
Reflectivity: (3)
Transmission coefficient:
Figure DEST_PATH_93279DEST_PATH_IMAGE026
(4)
Transmissivity:
Figure DEST_PATH_DEST_PATH_IMAGE027
(5)
Formula (2), (4) have represented reflection and the transmission property of 1-D photon crystal.For the periodic structure that m layer medium consists of, gross thickness is d, can be obtained by Bloch theorem:
（6）
K wherein is Bloch wave, finds the solution formula:
Figure DEST_PATH_376810DEST_PATH_IMAGE029
（7）
Can obtain the dispersion relation of One Dimension Periodic structure.
If medium is 2 layers, then have the transmission matrix of periodic structure to be [71]:
Figure DEST_PATH_RE-DEST_PATH_IMAGE030
(8) can obtain through abbreviation:
Figure DEST_PATH_913970DEST_PATH_IMAGE031
(9) find the solution eigenvalue equation
Figure DEST_PATH_RE-DEST_PATH_IMAGE032
Can obtain:
Figure DEST_PATH_128920DEST_PATH_IMAGE033
（10）
The Matlab programming is calculated just can the 1-D photon crystal forbidden band structure.
The energy gap that different photonic crystal dielectric material periodic structures produces is different, select different photonic crystals, the centre wavelength of selecting must drop in this photonic crystal band structure, change the plated film order, defect layer at the new medium that do not mix is also can produce Defect Modes in photonic crystal band, as shown in the figure, this Defect Modes is very large on the impact of photonic crystal transport property.

Claims (2)

1. the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm, it is characterized in that: wave filter comprises layer of photonic crystals (1) and lens element (2), layer of photonic crystals (1) is arranged on lens element (2) surface, and layer of photonic crystals (1) is mutually alternately superposeed by 10 layers of A dielectric layer and 10 layers of B dielectric layer and consists of (AB) 5(BA) 5Type composite structure, described A are gallium arsenide, and B is silicon dioxide, wherein (AB) 5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on the inboard of layer of photonic crystals (1), and is connected with lens element (2); Wherein (BA) 5Represent the compound medium layer of alternately stack formation of 5 layers of B medium and A medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on layer of photonic crystals (1) outside.
2. the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm as claimed in claim 1, it is characterized in that: the refractive index of described A dielectric layer is n AThe refractive index of=3.4, B dielectric layer is n B=2.22, centre wavelength is got 532nm.
CN 201220228547 2012-05-21 2012-05-21 Undoped layer photonic crystal optical filter with filtering scope from 430 to 630nm Expired - Fee Related CN202735536U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102645695A (en) * 2012-05-21 2012-08-22 河南科技大学 Doped-layer-free photonic crystal optical fiber with filtering range of 430-630 nm and manufacturing method thereof
CN109031519A (en) * 2018-07-28 2018-12-18 中国地质大学（北京） A kind of narrow-band optical filter and all-optical diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102645695A (en) * 2012-05-21 2012-08-22 河南科技大学 Doped-layer-free photonic crystal optical fiber with filtering range of 430-630 nm and manufacturing method thereof
CN102645695B (en) * 2012-05-21 2014-11-05 河南科技大学 Doped-layer-free photonic crystal optical fiber with filtering range of 430-630 nm and manufacturing method thereof
CN109031519A (en) * 2018-07-28 2018-12-18 中国地质大学（北京） A kind of narrow-band optical filter and all-optical diode

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