CN102645695A - Non-doped layer photonic crystal optical filter with filtering range of 430-630nm and manufacturing method thereof - Google Patents

Non-doped layer photonic crystal optical filter with filtering range of 430-630nm and manufacturing method thereof Download PDF

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CN102645695A
CN102645695A CN2012101579296A CN201210157929A CN102645695A CN 102645695 A CN102645695 A CN 102645695A CN 2012101579296 A CN2012101579296 A CN 2012101579296A CN 201210157929 A CN201210157929 A CN 201210157929A CN 102645695 A CN102645695 A CN 102645695A
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CN102645695B (en
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李萍
胡志刚
雷万军
杨晓利
宋霄薇
乔晓岚
娄丽敏
张瑞
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Henan University of Science and Technology
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Abstract

The invention provides a doped-layer-free photonic crystal optical fiber with a filtering range of 430-630 nm and a manufacturing method thereof. The filter comprises a photonic crystal layer and lens glass, wherein the photonic crystal layer is arranged on the surface of the lens glass; the photonic crystal layer is of a (AB) 5 (BA) 5 composite structure which is formed by alternately overlapping 10 layers of A dielectric layers and 10 layers of B dielectric layers; a one-dimensional photonic crystal transmission property curve is simulated by a transmission matrix method and one photonic crystal optical fiber without a doped structure is designed on the base of theoretical analysis; and a simple non-doped photonic crystal structure is adopted and only the sequence of film plating is changed for one time, so that the machining difficulty and the requirement on the precision are greatly reduced. Proper photonic crystal structure parameters are selected according to the frequency of monochrome light to be transmitted, so as to realize the filter for monochrome light transmission and the one-dimensional photonic crystal optical fiber has 100% transmittance filtering effect for a selected-frequency monochrome light. A developed film plating technology can conveniently machine a one-dimensional photonic crystal film system on the surface of an optical lens. The doped-layer-free photonic crystal optical fiber with filtering range of 430-630 nm and the manufacturing method thereof can be widely applied to various optical instruments needing the monochrome light transmission.

Description

滤波范围430～630nm的无掺杂层光子晶体光学滤波器及其制作方法Non-doped layer photonic crystal optical filter with filtering range of 430-630nm and manufacturing method thereof

技术领域 technical field

本发明涉及光子晶体领域，具体涉及实现对选定频率单色光高透过的一维光子晶体光学滤波器及其该滤波器的制作方法。  The invention relates to the field of photonic crystals, in particular to a one-dimensional photonic crystal optical filter capable of high transmission of selected frequency monochromatic light and a manufacturing method thereof. the

背景技术 Background technique

自1987年E.Yablonovitch在研究如何抑制自发辐射时和S.John在研究光子局域时分别独立提出光子晶体的概念以来，光子晶体的结构、制备和量子电动力学特性研究开始备受人们关注并得到广泛的研究。早期大部分的研究工作都是集中在二维和三维光子晶体，直到1998年 Fink , Winn , Chigrin 等人的工作才开始了一维光子晶体的研究。一维光子晶体结构简单，易于制造，同时也具备高维光子晶体的性质，得到了广泛的应用。  Since E. Yablonovitch proposed the concept of photonic crystals independently in 1987 when he was studying how to suppress spontaneous emission and S. John was studying photon localization, the research on the structure, preparation and quantum electrodynamic properties of photonic crystals has attracted people's attention. been extensively studied. Most of the early research work focused on two-dimensional and three-dimensional photonic crystals. It was not until 1998 that Fink, Winn, Chigrin et al. started the research on one-dimensional photonic crystals. One-dimensional photonic crystals are simple in structure, easy to manufacture, and also have the properties of high-dimensional photonic crystals, and have been widely used. the

光子晶体禁带形成是因为其折射率严格周期性分布，这种严格的周期性结构一旦受到破坏，光子晶体的传输特性将发生改变。常见的一维光子晶体滤波器都是采用掺杂结构的光子晶体，有意地引入特定的掺杂缺陷改变光子晶体严格周期结构，由此种光子晶体制成的滤波器结构不稳定，滤波器效果不明显，不能够广泛制作，并加以推广。  The formation of the photonic crystal band gap is due to the strict periodic distribution of its refractive index. Once this strict periodic structure is destroyed, the transmission characteristics of the photonic crystal will change. Common one-dimensional photonic crystal filters are photonic crystals with a doped structure, and specific doping defects are intentionally introduced to change the strict periodic structure of the photonic crystal. The filter structure made of this photonic crystal is unstable, and the filter effect It is not obvious, and cannot be widely produced and promoted. the

发明内容 Contents of the invention

本发明为解决上述技术问题，提供采用简单的无掺杂光子晶体结构，只是改变了一次镀膜顺序，大大降低了加工难度和对精度的要求。根据需要透过的单色光频率选择合适的光子晶体结构参数，实现单色光透过的滤波器，对选定频率单色光透过率达到100%的滤波效果，采用简单的无掺杂光子晶体结构，只是改变了一次镀膜顺序，大大降低了加工难度和对精度的要求。根据需要透过的单色光频率选择合适的光子晶体结构参数，实现单色光透过的滤波器，对选定频率单色光透过率达到100%的滤波效果。  In order to solve the above technical problems, the present invention provides a simple non-doped photonic crystal structure, only changes the coating sequence once, and greatly reduces the difficulty of processing and the requirement for precision. Select the appropriate photonic crystal structure parameters according to the frequency of the monochromatic light to be transmitted, and realize the filter for the transmission of monochromatic light. The filter effect of the monochromatic light transmittance of the selected frequency can reach 100%, and the simple non-doped The photonic crystal structure only changes the coating sequence once, which greatly reduces the processing difficulty and precision requirements. According to the frequency of monochromatic light to be transmitted, select the appropriate photonic crystal structure parameters to realize the filter for the transmission of monochromatic light, and achieve a filtering effect of 100% for the monochromatic light transmittance of the selected frequency. the

本发明为解决上述技术问题所采用的技术方案是：滤波范围430~630nm的无掺杂层光子晶体光学滤波器，滤波器包括光子晶体层和镜头玻璃，光晶晶体层设置在镜头玻璃表面，光子晶体层由10层A介质层和10层B介质层相互交替叠加构成（AB）5（BA）5型复合结构，所述的A为砷化镓,B为二氧化硅,其中（AB）5表示5层A介质和B介质交替叠加构成的复合介质层，其中A介质层的厚度为38.118nm，B介质层的厚度为59.9nm，该复合介质层设置在光子晶体层的内侧，并与镜头玻璃连接；其中（AB）5表示5层A介质和B介质交替叠加构成的复合介质层，其中A介质层的厚度为38.118nm，B介质层的厚度为59.9nm，该复合介质层设置在光子晶体层外侧。  The technical solution adopted by the present invention to solve the above technical problems is: an undoped layer photonic crystal optical filter with a filtering range of 430~630nm, the filter includes a photonic crystal layer and a lens glass, and the optical crystal layer is arranged on the surface of the lens glass, The photonic crystal layer is composed of 10 layers of A dielectric layer and 10 layers of B dielectric layer alternately superimposed on each other to form (AB) 5 (BA) 5 -type composite structure, where A is gallium arsenide and B is silicon dioxide, where (AB) 5 indicates a composite medium layer composed of five layers of A medium and B medium alternately stacked, wherein the thickness of the A medium layer is 38.118nm, and the thickness of the B medium layer is 59.9nm. The composite medium layer is arranged inside the photonic crystal layer and is connected with Lens glass connection; where (AB) 5 indicates a composite dielectric layer composed of 5 layers of A medium and B medium alternately stacked, wherein the thickness of the A medium layer is 38.118nm, and the thickness of the B medium layer is 59.9nm. The composite medium layer is set at outside the photonic crystal layer.

本发明所述的A介质层的折射率为 

Figure 2012101579296100002DEST_PATH_IMAGE001
，B介质层的折射率为
Figure 749676DEST_PATH_IMAGE002
，A介质层的厚度为
Figure 2012101579296100002DEST_PATH_IMAGE003
,B介质层的厚度为
Figure 2012101579296100002DEST_PATH_IMAGE005
，中心波长取532nm。  The refractive index of the A medium layer described in the present invention is
Figure 2012101579296100002DEST_PATH_IMAGE001
, the refractive index of the B medium layer is
Figure 749676DEST_PATH_IMAGE002
, the thickness of A dielectric layer is
Figure 2012101579296100002DEST_PATH_IMAGE003
, the thickness of the B dielectric layer is
Figure 2012101579296100002DEST_PATH_IMAGE005
, the center wavelength is 532nm.

滤波范围430~630nm的无掺杂层光子晶体光学滤波器的制作方法，  A method for manufacturing an undoped layer photonic crystal optical filter with a filtering range of 430~630nm,

步骤一、取一个镜头玻璃作为基板，将基板双面抛光，备用； Step 1. Take a lens glass as the substrate, polish both sides of the substrate, and set aside;

步骤二、将加工好的基板表面进行清洁化处理，采用酸性清洗液和去离子水分别清洗基板，然后将基板置于热板上烘干，温度65°，时间10分钟； Step 2. Clean the surface of the processed substrate, clean the substrate with acidic cleaning solution and deionized water, and then place the substrate on a hot plate to dry at 65° for 10 minutes;

步骤三、将基板放入真空镀膜机中，在其一个表面上进行A介质的镀膜，砷化镓折射率

Figure 2012101579296100002DEST_PATH_IMAGE007
，中心波长取532nm时，其镀膜厚度为
Figure 2012101579296100002DEST_PATH_IMAGE009
，即38.118nm，镀膜后干燥冷却30分钟，然后在基板镀有A介质膜层的表面进行B介质的镀膜，二氧化硅的折射率
Figure 2012101579296100002DEST_PATH_IMAGE011
，中心波长取532nm时，其镀膜厚度为
Figure 2012101579296100002DEST_PATH_IMAGE013
，即59.9nm，镀膜后干燥冷却30分钟； Step 3. Put the substrate into the vacuum coating machine, and coat the A medium on one surface, and the refractive index of gallium arsenide is
Figure 2012101579296100002DEST_PATH_IMAGE007
, when the central wavelength is 532nm, the coating thickness is
Figure 2012101579296100002DEST_PATH_IMAGE009
, that is, 38.118nm, dry and cool for 30 minutes after coating, and then perform B medium coating on the surface of the substrate coated with A dielectric film layer, the refractive index of silicon dioxide
Figure 2012101579296100002DEST_PATH_IMAGE011
, when the central wavelength is 532nm, the coating thickness is
Figure 2012101579296100002DEST_PATH_IMAGE013
, namely 59.9nm, dried and cooled for 30 minutes after coating;

步骤四、按照步骤三的方法交替进行A介质和B介质镀膜，直至镀好4层A介质膜层和4层B介质膜层，在基板上形成结构为的光子晶体复合镀膜层； Step 4. Alternately carry out A medium and B medium coatings according to the method of step 3 until 4 layers of A dielectric film and 4 layers of B dielectric film are coated, and the structure is formed on the substrate. Photonic crystal composite coating layer;

步骤五、在光子晶体结构已经镀膜为

Figure 542183DEST_PATH_IMAGE016
的基板结构上继续进行A介质砷化镓的镀膜，厚度为38.118nm，干燥冷却30分钟，在基板上形成结构为
Figure 321920DEST_PATH_IMAGE018
的光子晶体复合镀膜层； Step five, the photonic crystal structure has been coated as
Figure 542183DEST_PATH_IMAGE016
On the substrate structure, continue to carry out the A-dielectric gallium arsenide coating, the thickness is 38.118nm, dry and cool for 30 minutes, and the structure formed on the substrate is
Figure 321920DEST_PATH_IMAGE018
Photonic crystal composite coating layer;

步骤六、在基板上光子晶体结构已经镀膜为的结构上进行B介质二氧化硅的镀膜，厚度为119.8nm，在基板上形成结构为

Figure 469184DEST_PATH_IMAGE020
的光子晶体复合镀膜层； Step 6: The photonic crystal structure has been coated on the substrate as On the structure of the B dielectric silicon dioxide coating, the thickness is 119.8nm, and the structure formed on the substrate is
Figure 469184DEST_PATH_IMAGE020
Photonic crystal composite coating layer;

步骤七、按照步骤三的方法交替进行A介质和B介质镀膜，直至镀好5层A介质膜层和4层B介质膜层，在基板上形成结构为

Figure 291647DEST_PATH_IMAGE022
的光子晶体复合镀膜层，制得表面设有
Figure 558680DEST_PATH_IMAGE022
光子晶体结构的滤波器。 Step 7. Alternately carry out A dielectric and B dielectric coatings according to the method of step 3, until 5 layers of A dielectric film and 4 layers of B dielectric film are coated, and the structure is formed on the substrate.
Figure 291647DEST_PATH_IMAGE022
The photonic crystal composite coating layer, the surface is prepared with
Figure 558680DEST_PATH_IMAGE022
Filters with photonic crystal structures.

本发明的有益效果是：  The beneficial effects of the present invention are:

1、采用简单的无掺杂光子晶体结构，只是改变了一次镀膜顺序，大大降低了加工难度和对精度的要求。根据需要透过的单色光频率选择合适的光子晶体结构参数，实现单色光透过的滤波器，对选定频率单色光透过率达到100%的滤波效果。 1. Adopt a simple non-doped photonic crystal structure, only change the coating sequence once, which greatly reduces the processing difficulty and precision requirements. According to the frequency of monochromatic light to be transmitted, select the appropriate photonic crystal structure parameters to realize the filter for the transmission of monochromatic light, and achieve a filtering effect of 100% for the monochromatic light transmittance of the selected frequency.

2、无掺杂光子晶体结构改变了有意地引入特定的掺杂缺陷改变光子晶体严格周期结构，可完全制得光子晶体禁带变化制作特定频率的一维光子晶体滤波器。  2. The structure of the doped-free photonic crystal has been changed. Intentionally introducing specific doping defects to change the strict periodic structure of the photonic crystal can completely change the forbidden band of the photonic crystal to make a one-dimensional photonic crystal filter with a specific frequency. the

附图说明 Description of drawings

图1为本发明的结构示意图；  Fig. 1 is a structural representation of the present invention;

图2结构

Figure 196728DEST_PATH_IMAGE024
的透过率随波长变化曲线； Figure 2 structure
Figure 196728DEST_PATH_IMAGE024
The transmittance versus wavelength curve;

图3结构

Figure 865607DEST_PATH_IMAGE022
的透过率随波长变化曲线； Figure 3 structure
Figure 865607DEST_PATH_IMAGE022
The transmittance versus wavelength curve;

图中：1、光子晶体层，2、玻璃镜头。 In the figure: 1. Photonic crystal layer, 2. Glass lens.

具体实施方法Specific implementation method

如图所示，滤波范围430~630nm的无掺杂层光子晶体光学滤波器，滤波器包括光子晶体层1和镜头玻璃2，光晶晶体层1设置在镜头玻璃2表面，光子晶体层1由10层A介质层和10层B介质层相互交替叠加构成（AB）5（BA）5型复合结构，所述的A为砷化镓,B为二氧化硅,其中（AB）5表示5层A介质和B介质交替叠加构成的复合介质层，其中A介质层的厚度为38.118nm，B介质层的厚度为59.9nm，该复合介质层设置在光子晶体层1的内侧，并与镜头玻璃连接；其中（AB）5表示5层A介质和B介质交替叠加构成的复合介质层，其中A介质层的厚度为38.118nm，B介质层的厚度为59.9nm，该复合介质层设置在光子晶体层2外侧。 As shown in the figure, an undoped photonic crystal optical filter with a filtering range of 430~630nm, the filter includes a photonic crystal layer 1 and a lens glass 2, the photonic crystal layer 1 is arranged on the surface of the lens glass 2, and the photonic crystal layer 1 is composed of 10 layers of A dielectric layer and 10 layers of B dielectric layer are stacked alternately to form (AB) 5 (BA) 5 type composite structure, where A is gallium arsenide and B is silicon dioxide, where (AB) 5 means 5 layers The composite dielectric layer formed by alternating stacking of A medium and B medium, wherein the thickness of the A medium layer is 38.118nm, and the thickness of the B medium layer is 59.9nm. The composite medium layer is arranged on the inner side of the photonic crystal layer 1 and connected with the lens glass ; where (AB) 5 represents a composite medium layer composed of five layers of A medium and B medium alternately superimposed, wherein the thickness of the A medium layer is 38.118nm, and the thickness of the B medium layer is 59.9nm. The composite medium layer is set on the photonic crystal layer 2 outside.

所述的A介质层的折射率为

Figure 858971DEST_PATH_IMAGE007
，B介质层的折射率为
Figure 613300DEST_PATH_IMAGE026
，A介质层的厚度为
Figure 2012101579296100002DEST_PATH_IMAGE028
,B介质层的厚度为
Figure 287995DEST_PATH_IMAGE005
，中心波长取532nm。  The refractive index of the A medium layer
Figure 858971DEST_PATH_IMAGE007
, the refractive index of the B medium layer is
Figure 613300DEST_PATH_IMAGE026
, the thickness of A dielectric layer is
Figure 2012101579296100002DEST_PATH_IMAGE028
, the thickness of the B dielectric layer is
Figure 287995DEST_PATH_IMAGE005
, the center wavelength is 532nm.

滤波范围430~630nm的无掺杂层光子晶体光学滤波器的制作方法，  A method for manufacturing an undoped layer photonic crystal optical filter with a filtering range of 430~630nm,

步骤一、取一个镜头玻璃作为基板，将基板双面抛光，备用； Step 1. Take a lens glass as the substrate, polish both sides of the substrate, and set aside;

步骤二、将加工好的基板表面进行清洁化处理，采用酸性清洗液和去离子水分别清洗基板，然后将基板置于热板上烘干，温度65°，时间10分钟； Step 2. Clean the surface of the processed substrate, clean the substrate with acidic cleaning solution and deionized water, and then place the substrate on a hot plate to dry at 65° for 10 minutes;

步骤三、将基板放入真空镀膜机中，在其一个表面上进行A介质的镀膜，砷化镓折射率，中心波长取532nm时，其镀膜厚度为

Figure 811380DEST_PATH_IMAGE030
，即38.118nm，镀膜后干燥冷却30分钟，然后在基板镀有A介质膜层的表面进行B介质的镀膜，二氧化硅的折射率
Figure 241225DEST_PATH_IMAGE011
，中心波长取532nm时，其镀膜厚度为
Figure 482850DEST_PATH_IMAGE013
，即59.9nm，镀膜后干燥冷却30分钟； Step 3. Put the substrate into a vacuum coating machine, and coat one of its surfaces with medium A, and the refractive index of gallium arsenide is , when the central wavelength is 532nm, the coating thickness is
Figure 811380DEST_PATH_IMAGE030
, that is, 38.118nm, dry and cool for 30 minutes after coating, and then perform B medium coating on the surface of the substrate coated with A dielectric film layer, the refractive index of silicon dioxide
Figure 241225DEST_PATH_IMAGE011
, when the central wavelength is 532nm, the coating thickness is
Figure 482850DEST_PATH_IMAGE013
, namely 59.9nm, dried and cooled for 30 minutes after coating;

步骤四、按照步骤三的方法交替进行A介质和B介质镀膜，直至镀好4层A介质膜层和4层B介质膜层，在基板上形成结构为

Figure 2012101579296100002DEST_PATH_IMAGE031
的光子晶体复合镀膜层； Step 4. Alternately carry out A medium and B medium coatings according to the method of step 3 until 4 layers of A dielectric film and 4 layers of B dielectric film are coated, and the structure is formed on the substrate.
Figure 2012101579296100002DEST_PATH_IMAGE031
Photonic crystal composite coating layer;

步骤五、在光子晶体结构已经镀膜为的基板结构上继续进行A介质砷化镓的镀膜，厚度为38.118nm，干燥冷却30分钟，在基板上形成结构为

Figure 339128DEST_PATH_IMAGE018
的光子晶体复合镀膜层； Step five, the photonic crystal structure has been coated as On the substrate structure, continue to carry out the A-dielectric gallium arsenide coating, the thickness is 38.118nm, dry and cool for 30 minutes, and the structure formed on the substrate is
Figure 339128DEST_PATH_IMAGE018
Photonic crystal composite coating layer;

步骤六、在基板上光子晶体结构已经镀膜为

Figure 674294DEST_PATH_IMAGE018
的结构上进行B介质二氧化硅的镀膜，厚度为119.8nm，为两层B介质的厚度，即一次镀下两层的B介质，在基板上形成结构为
Figure 2012101579296100002DEST_PATH_IMAGE033
的光子晶体复合镀膜层； Step 6: The photonic crystal structure has been coated on the substrate as
Figure 674294DEST_PATH_IMAGE018
On the structure of the B dielectric silicon dioxide coating, the thickness is 119.8nm, which is the thickness of two layers of B dielectric, that is, two layers of B dielectric are plated at one time, and the structure is formed on the substrate.
Figure 2012101579296100002DEST_PATH_IMAGE033
Photonic crystal composite coating layer;

步骤七、按照步骤三的方法交替进行A介质和B介质镀膜，直至镀好5层A介质膜层和4层B介质膜层，在基板上形成结构为的光子晶体复合镀膜层，制得表面设有

Figure 419713DEST_PATH_IMAGE022
光子晶体结构的滤波器。 Step 7. Alternately carry out A dielectric and B dielectric coatings according to the method of step 3, until 5 layers of A dielectric film and 4 layers of B dielectric film are coated, and the structure is formed on the substrate. The photonic crystal composite coating layer, the surface is prepared with
Figure 419713DEST_PATH_IMAGE022
Filters with photonic crystal structures.

本发明的真空镀膜机采用DM-450型真空镀膜机， 钟罩尺寸： Φ 450 mm×540 mm， 极限真空： ≤6.5×10-4 Pa, 抽气时间： 真空度达到1.3×10-3 Pa时， t≤50 min。  The vacuum coating machine of the present invention adopts the DM-450 vacuum coating machine, the bell jar size: Φ 450 mm×540 mm, the ultimate vacuum: ≤6.5×10-4 Pa, the pumping time: the vacuum degree reaches 1.3×10-3 Pa , t≤50 min. the

本发明的镀膜方法可以由现代真空离子镀法、真空磁控溅射法、真空蒸发法、化学气相沉淀法、溶胶—凝胶法以及热压技术在重铅X线防护玻璃表层镀膜实现。  The coating method of the present invention can be realized by modern vacuum ion plating method, vacuum magnetron sputtering method, vacuum evaporation method, chemical vapor deposition method, sol-gel method and hot pressing technology on the surface coating of heavy lead X-ray protective glass. the

本发明用传输矩阵法仿真了一维光子晶体的传输特性曲线，在理论分析的基础上设计了一种无掺杂结构的光子晶体光学滤波器，该无掺杂结构的光子晶体只是改变了一次镀膜顺序，但对光子晶体的周期结构破坏性一样很大，产生了缺陷模。结构分别为

Figure 2012101579296100002DEST_PATH_IMAGE034
和
Figure 917691DEST_PATH_IMAGE022
，仿真研究这种结构的变化对光子晶体传输特性的影响。  The present invention uses the transmission matrix method to simulate the transmission characteristic curve of a one-dimensional photonic crystal, and designs a photonic crystal optical filter with a non-doped structure on the basis of theoretical analysis. The photonic crystal with a non-doped structure is only changed once Coating sequence, but it is also very destructive to the periodic structure of photonic crystals, resulting in defect modes. The structures are
Figure 2012101579296100002DEST_PATH_IMAGE034
and
Figure 917691DEST_PATH_IMAGE022
, the influence of this structure change on the transmission characteristics of photonic crystals is studied by simulation.

A为砷化镓,B为二氧化硅：

Figure 125556DEST_PATH_IMAGE036
，,折射率分别是
Figure 958700DEST_PATH_IMAGE007
，
Figure 311184DEST_PATH_IMAGE026
，光子晶体介质层厚度分别是：
Figure 253732DEST_PATH_IMAGE028
,
Figure 629350DEST_PATH_IMAGE005
，中心波长取532nm。  A is gallium arsenide, B is silicon dioxide:
Figure 125556DEST_PATH_IMAGE036
, , the refractive index is
Figure 958700DEST_PATH_IMAGE007
,
Figure 311184DEST_PATH_IMAGE026
, the thickness of the photonic crystal dielectric layer is:
Figure 253732DEST_PATH_IMAGE028
,
Figure 629350DEST_PATH_IMAGE005
, the center wavelength is 532nm.

仿真结果如附图所示。从附图2可明显看到周期数为10的光子晶体严格周期结构

Figure 2012101579296100002DEST_PATH_IMAGE039
在460~630nm有明显的光子禁带，禁带中频段的光透过率几乎为零，禁带特征非常明显。当结构改变一次镀膜顺序变为时，从附图3可明显看到光子晶体禁带中频率等于中心波长的位置上出现了缺陷模，透过率从0急剧增大为1，实现了对选定中心波长532nm的单色光滤过。  The simulation results are shown in the attached figure. From Figure 2, it can be clearly seen that the photonic crystal with a period number of 10 has a strictly periodic structure
Figure 2012101579296100002DEST_PATH_IMAGE039
There is an obvious photonic band gap at 460~630nm, the light transmittance in the middle frequency band of the band gap is almost zero, and the band gap feature is very obvious. When the structure changes once the coating sequence becomes , it can be clearly seen from Figure 3 that the frequency in the forbidden band of the photonic crystal is equal to the central wavelength A defect mode appears at the position of , and the transmittance increases sharply from 0 to 1, realizing the filtering of monochromatic light with a selected central wavelength of 532nm.

传输矩阵法(Transfer Matrix Method，TMM)实质是在空间中把麦克斯韦方程做有限差分，然后将其变成传输矩阵的形式。把求解光子晶体带隙计算转化为本征值求解问题。对Maxwell方程组做离散化，相邻两层空间的场之间的关系可以用一个传输矩阵来表示。传输矩阵可以把一个层面上的电场和磁场与紧邻的另一个层面上的电场和磁场联系起来，如此可以将其外推到整个光子晶体空间。从而计算出光子晶体的透射系数和反射系数。  The essence of the Transfer Matrix Method (TMM) is to make a finite difference of Maxwell's equations in space, and then convert it into the form of a transfer matrix. The calculation of solving the photonic crystal band gap is transformed into the problem of solving eigenvalues. By discretizing Maxwell's equations, the relationship between fields in two adjacent spaces can be represented by a transmission matrix. The transmission matrix can relate the electric and magnetic fields on one layer to those on another immediately adjacent layer, so that they can be extrapolated to the entire photonic crystal space. Thus, the transmission coefficient and reflection coefficient of the photonic crystal are calculated. the

对于一维光子晶体周期性结构，有：  For one-dimensional photonic crystal periodic structure, there are:

Figure 460219DEST_PATH_IMAGE043
               （1）
Figure 460219DEST_PATH_IMAGE043
(1)

由

Figure 573669DEST_PATH_IMAGE045
可以得到： Depend on
Figure 573669DEST_PATH_IMAGE045
can get:

反射系数：

Figure 498900DEST_PATH_IMAGE047
                       （2） Reflection coefficient:
Figure 498900DEST_PATH_IMAGE047
(2)

反 射 率：

Figure 723207DEST_PATH_IMAGE049
                                                   （3） Reflectivity:
Figure 723207DEST_PATH_IMAGE049
(3)

透射系数：

Figure 784704DEST_PATH_IMAGE051
                         （4） Transmission coefficient:
Figure 784704DEST_PATH_IMAGE051
(4)

透 射 率：

Figure 6738DEST_PATH_IMAGE053
                                                   （5） Transmittance:
Figure 6738DEST_PATH_IMAGE053
(5)

公式（2）、（4）表示了一维光子晶体的反射和透射性质。对于m层介质构成的周期结构，总厚度为d，由布洛赫定理可以得到： Equations (2), (4) represent the reflection and transmission properties of one-dimensional photonic crystals. For a periodic structure composed of m layers of media, the total thickness is d, and it can be obtained by Bloch's theorem:

               

Figure 419265DEST_PATH_IMAGE055
      （6）
Figure 419265DEST_PATH_IMAGE055
(6)

其中的k为布洛赫波矢，求解式： Among them, k is the Bloch wave vector, and the solution formula is:

            

Figure 447264DEST_PATH_IMAGE057
                                    （7）
Figure 447264DEST_PATH_IMAGE057
(7)

可以得到一维周期性结构的色散关系。 The dispersion relation of one-dimensional periodic structure can be obtained.

设介质为2层，则有周期结构的传输矩阵为[71]：  Assuming that the medium is 2 layers, the transmission matrix with periodic structure is [71]:

Figure 628847DEST_PATH_IMAGE059
        （8）经化简可以得到：
Figure 628847DEST_PATH_IMAGE059
(8) After simplification, we can get:

  （9）求解本征值方程

Figure 145772DEST_PATH_IMAGE063
可以得到： (9) Solve the eigenvalue equation
Figure 145772DEST_PATH_IMAGE063
can get:

                    

Figure 711882DEST_PATH_IMAGE065
      （10）
Figure 711882DEST_PATH_IMAGE065
(10)

Matlab 编程计算便可以一维光子晶体禁带结构。 One-dimensional photonic crystal bandgap structure can be realized by Matlab programming calculation.

不同的光子晶体介质材料周期结构产生的禁带宽度不同，选用不同的光子晶体，选择的中心波长必须落在该光子晶体禁带结构内，改变镀膜顺序，在没有掺杂新介质的缺陷层是也可以在光子晶体禁带中产生缺陷模，如图所示，这种缺陷模对光子晶体传输特性的影响很大。   Different photonic crystal dielectric materials have different forbidden band widths due to the periodic structure. If different photonic crystals are selected, the selected center wavelength must fall within the forbidden band structure of the photonic crystal. If the coating order is changed, the defect layer without doping new media is Defect modes can also be generated in the forbidden band of photonic crystals. As shown in the figure, such defect modes have a great influence on the transmission characteristics of photonic crystals. the

Claims (3)

1. the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm; It is characterized in that: wave filter comprises layer of photonic crystals (1) and lens element (2); The brilliant crystal layer of light (1) is arranged on lens element (2) surface, and layer of photonic crystals (1) is alternately superposeed each other by 10 layers of A dielectric layer and 10 layers of B dielectric layer and constitutes (AB) 5(BA) 5Type composite structure, described A are gallium arsenide, and B is a silicon dioxide, wherein (AB) 5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on the inboard of layer of photonic crystals (1), and is connected with lens element; Wherein (AB) 5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on layer of photonic crystals (2) outside.
2. the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm as claimed in claim 1; It is characterized in that: the refractive index of described A dielectric layer is
Figure 2012101579296100001DEST_PATH_IMAGE001
; The refractive index of B dielectric layer is
Figure 840878DEST_PATH_IMAGE002
; The thickness of A dielectric layer does; The thickness of B dielectric layer is , and centre wavelength is got 532nm.
3. the method for making of the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm as claimed in claim 1 is characterized in that:
Step 1, get a lens element as substrate, with the substrate twin polishing, subsequent use;
Step 2, the substrate surface that processes is cleaned processing, adopt acidic cleaning solution and deionized water to distinguish cleaning base plate, substrate is placed on the hot plate dry then, 65 ° of temperature, 10 minutes time;
Step 3, substrate is put into vacuum coating equipment; On one surface, carry out the plated film of A medium; Gallium arsenide refractive index
Figure 758018DEST_PATH_IMAGE001
; When centre wavelength is got 532nm; Its coating film thickness is
Figure 537755DEST_PATH_IMAGE004
; Be 38.118nm; Dry cooling is 30 minutes behind the plated film; Carry out the plated film of B medium then on the surface that substrate is coated with the A media coating; The refractive index of silicon dioxide
Figure 2012101579296100001DEST_PATH_IMAGE005
; When centre wavelength is got 532nm; Its coating film thickness is
Figure 870648DEST_PATH_IMAGE006
, i.e. 59.9nm, and dry cooling is 30 minutes behind the plated film;
Step 4, according to the method for step 3 hocket A medium and B medium plated film; Until 4 layers of A media coating of plating and 4 layers of B media coating, on substrate, forming structure is the photonic crystal compound plating rete of
Figure 2012101579296100001DEST_PATH_IMAGE007
;
Step 5, photon crystal structure plated film for proceeding the plated film of A medium gallium arsenide on the board structure of
Figure 685020DEST_PATH_IMAGE007
; Thickness is 38.118nm; Dry cooling 30 minutes, on substrate, forming structure is the photonic crystal compound plating rete of
Figure 507482DEST_PATH_IMAGE008
;
Step 6, photon crystal structure on the substrate plated film for carrying out the plated film of B medium silicon dioxide on the structure of
Figure 712199DEST_PATH_IMAGE008
; Thickness is 119.8nm, and on substrate, forming structure is the photonic crystal compound plating rete of
Figure 2012101579296100001DEST_PATH_IMAGE009
;
Step 7, according to the method for step 3 hocket A medium and B medium plated film; Until 5 layers of A media coating of plating and 4 layers of B media coating; On substrate, forming structure is the photonic crystal compound plating rete of , makes the wave filter that the surface is provided with
Figure 579978DEST_PATH_IMAGE010
photon crystal structure.
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