CN102645695A - Doped-layer-free photonic crystal optical fiber with filtering range of 430-630 nm and manufacturing method thereof - Google Patents
Doped-layer-free photonic crystal optical fiber with filtering range of 430-630 nm and manufacturing method thereof Download PDFInfo
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- CN102645695A CN102645695A CN2012101579296A CN201210157929A CN102645695A CN 102645695 A CN102645695 A CN 102645695A CN 2012101579296 A CN2012101579296 A CN 2012101579296A CN 201210157929 A CN201210157929 A CN 201210157929A CN 102645695 A CN102645695 A CN 102645695A
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Abstract
The invention provides a doped-layer-free photonic crystal optical fiber with a filtering range of 430-630 nm and a manufacturing method thereof. The filter comprises a photonic crystal layer and lens glass, wherein the photonic crystal layer is arranged on the surface of the lens glass; the photonic crystal layer is of a (AB) 5 (BA) 5 composite structure which is formed by alternately overlapping 10 layers of A dielectric layers and 10 layers of B dielectric layers; a one-dimensional photonic crystal transmission property curve is simulated by a transmission matrix method and one photonic crystal optical fiber without a doped structure is designed on the base of theoretical analysis; and a simple non-doped photonic crystal structure is adopted and only the sequence of film plating is changed for one time, so that the machining difficulty and the requirement on the precision are greatly reduced. Proper photonic crystal structure parameters are selected according to the frequency of monochrome light to be transmitted, so as to realize the filter for monochrome light transmission and the one-dimensional photonic crystal optical fiber has 100% transmittance filtering effect for a selected-frequency monochrome light. A developed film plating technology can conveniently machine a one-dimensional photonic crystal film system on the surface of an optical lens. The doped-layer-free photonic crystal optical fiber with filtering range of 430-630 nm and the manufacturing method thereof can be widely applied to various optical instruments needing the monochrome light transmission.
Description
Technical field
The present invention relates to the photonic crystal field, be specifically related to realize the 1-D photon crystal optical filter that selected frequency monochromatic light height is seen through and the method for making of this wave filter thereof.
Background technology
From E.Yablonovitch in 1987 when how research suppresses spontaneous radiation with S.John during at research photon local since the notion of independent respectively proposition photonic crystal, the structure of photonic crystal, preparation and quantum electrodynamics characteristic research begin to enjoy people to pay close attention to and obtain extensive studies.Early stage most research work all is to concentrate on the two and three dimensions photonic crystal, up to Fink in 1998, and Winn, people's such as Chigrin work has just begun the research of 1-D photon crystal.1-D photon crystal is simple in structure, is easy to make, and also possesses the character of high dimensional photonic crystal simultaneously, has obtained using widely.
It is that in a single day this strict periodicity structure is damaged because of the strict periodic distribution of its refractive index that photonic crystal band forms, and the transport property of photonic crystal will change.Common 1-D photon crystal wave filter all is the photonic crystal that adopts doped structure; Introduce specific doping defective wittingly and change the strict periodic structure of photonic crystal; Plant the filter construction instability that photonic crystal is processed thus; Filter effect is not obvious, can not extensively make, and promote.
Summary of the invention
The present invention is for solving the problems of the technologies described above, and provides to adopt simple non-impurity-doped photon crystal structure, just changed the plated film order one time, greatly reduces difficulty of processing and to the requirement of precision.The monochromatic light frequency that sees through is as required selected suitable photon crystal structure parameter; Realize the wave filter that monochromatic light sees through; Selected frequency monochromatic light transmitance is reached 100% filter effect; Adopt simple non-impurity-doped photon crystal structure, just changed plated film order, greatly reduce difficulty of processing and the requirement of precision.The monochromatic light frequency that sees through is as required selected suitable photon crystal structure parameter, realizes the wave filter that monochromatic light sees through, and selected frequency monochromatic light transmitance is reached 100% filter effect.
The present invention solves the problems of the technologies described above the technical scheme that is adopted to be: the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm; Wave filter comprises layer of photonic crystals and lens element; The brilliant crystal layer of light is arranged on the lens element surface, and layer of photonic crystals is alternately superposeed each other by 10 layers of A dielectric layer and 10 layers of B dielectric layer and constitutes (AB)
5(BA)
5Type composite structure, described A are gallium arsenide, and B is a silicon dioxide, wherein (AB)
5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on the inboard of layer of photonic crystals, and is connected with lens element; Wherein (AB)
5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on the layer of photonic crystals outside.
The refractive index of A dielectric layer of the present invention is
; The refractive index of B dielectric layer is
; The thickness of A dielectric layer is
; The thickness of B dielectric layer is
, and centre wavelength is got 532nm.
The method for making of the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm,
Step 1, get a lens element as substrate, with the substrate twin polishing, subsequent use;
Step 2, the substrate surface that processes is cleaned processing, adopt acidic cleaning solution and deionized water to distinguish cleaning base plate, substrate is placed on the hot plate dry then, 65 ° of temperature, 10 minutes time;
Step 3, substrate is put into vacuum coating equipment; On one surface, carry out the plated film of A medium; Gallium arsenide refractive index
; When centre wavelength is got 532nm; Its coating film thickness is
; Be 38.118nm; Dry cooling is 30 minutes behind the plated film; Carry out the plated film of B medium then on the surface that substrate is coated with the A media coating; The refractive index of silicon dioxide
, when centre wavelength was got 532nm, its coating film thickness was
; Be 59.9nm, dry cooling is 30 minutes behind the plated film;
Step 4, according to the method for step 3 hocket A medium and B medium plated film; Until 4 layers of A media coating of plating and 4 layers of B media coating, on substrate, forming structure is the photonic crystal compound plating rete of
;
Step 5, photon crystal structure plated film for proceeding the plated film of A medium gallium arsenide on the board structure of
; Thickness is 38.118nm; Dry cooling 30 minutes, on substrate, forming structure is the photonic crystal compound plating rete of
;
Step 6, photon crystal structure on the substrate plated film for carrying out the plated film of B medium silicon dioxide on the structure of
; Thickness is 119.8nm, and on substrate, forming structure is the photonic crystal compound plating rete of
;
Step 7, according to the method for step 3 hocket A medium and B medium plated film; Until 5 layers of A media coating of plating and 4 layers of B media coating; On substrate, forming structure is the photonic crystal compound plating rete of
, makes the wave filter that the surface is provided with
photon crystal structure.
The invention has the beneficial effects as follows:
1, adopts simple non-impurity-doped photon crystal structure, just changed the plated film order one time, greatly reduce difficulty of processing and the requirement of precision.The monochromatic light frequency that sees through is as required selected suitable photon crystal structure parameter, realizes the wave filter that monochromatic light sees through, and selected frequency monochromatic light transmitance is reached 100% filter effect.
2, the non-impurity-doped photon crystal structure has changed and introduces specific doping defective wittingly and change the strict periodic structure of photonic crystal, can make photonic crystal band fully and change the 1-D photon crystal wave filter of making CF.
Description of drawings
Fig. 1 is a structural representation of the present invention;
The transmitance of Fig. 2 structure
is with the wavelength change curve;
The transmitance of Fig. 3 structure
is with the wavelength change curve;
Among the figure: 1, layer of photonic crystals, 2, glass lens.
The practical implementation method
As shown in the figure; The non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm; Wave filter comprises layer of photonic crystals 1 and lens element 2, and the brilliant crystal layer 1 of light is arranged on lens element 2 surfaces, and layer of photonic crystals 1 is alternately superposeed each other by 10 layers of A dielectric layer and 10 layers of B dielectric layer and constitutes (AB)
5(BA)
5Type composite structure, described A are gallium arsenide, and B is a silicon dioxide, wherein (AB)
5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on the inboard of layer of photonic crystals 1, and is connected with lens element; Wherein (AB)
5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on layer of photonic crystals 2 outsides.
The refractive index of described A dielectric layer is
; The refractive index of B dielectric layer is
; The thickness of A dielectric layer is
; The thickness of B dielectric layer is
, and centre wavelength is got 532nm.
The method for making of the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm,
Step 1, get a lens element as substrate, with the substrate twin polishing, subsequent use;
Step 2, the substrate surface that processes is cleaned processing, adopt acidic cleaning solution and deionized water to distinguish cleaning base plate, substrate is placed on the hot plate dry then, 65 ° of temperature, 10 minutes time;
Step 3, substrate is put into vacuum coating equipment; On one surface, carry out the plated film of A medium; Gallium arsenide refractive index
; When centre wavelength is got 532nm; Its coating film thickness is
; Be 38.118nm; Dry cooling is 30 minutes behind the plated film; Carry out the plated film of B medium then on the surface that substrate is coated with the A media coating; The refractive index of silicon dioxide
, when centre wavelength was got 532nm, its coating film thickness was
; Be 59.9nm, dry cooling is 30 minutes behind the plated film;
Step 4, according to the method for step 3 hocket A medium and B medium plated film; Until 4 layers of A media coating of plating and 4 layers of B media coating, on substrate, forming structure is the photonic crystal compound plating rete of
;
Step 5, photon crystal structure plated film for proceeding the plated film of A medium gallium arsenide on the board structure of
; Thickness is 38.118nm; Dry cooling 30 minutes, on substrate, forming structure is the photonic crystal compound plating rete of
;
Step 6, photon crystal structure on the substrate plated film for carrying out the plated film of B medium silicon dioxide on the structure of
; Thickness is 119.8nm; Thickness for two-layer B medium; Promptly once plate two-layer B medium down, on substrate, forming structure is the photonic crystal compound plating rete of
;
Step 7, according to the method for step 3 hocket A medium and B medium plated film; Until 5 layers of A media coating of plating and 4 layers of B media coating; On substrate, forming structure is the photonic crystal compound plating rete of
, makes the wave filter that the surface is provided with
photon crystal structure.
Vacuum coating equipment of the present invention adopts DM-450 type vacuum coating equipment, bell jar size: Φ 450 mm * 540 mm, and end vacuum :≤6.5 * 10-4 Pa, bleed the time: when vacuum tightness reaches 1.3 * 10-3 Pa, t≤50 min.
Film plating process of the present invention can be realized at heavy plumbous x-ray protection surface layer of glass plated film by modern vacuum ion plating method, vacuum magnetic-control sputtering method, vacuum vapor deposition method, chemical gaseous phase deposition method, sol-gel processing and hot-pressing technique.
The present invention with transfer matrix method emulation the transfer curve of 1-D photon crystal; On the basis of theory analysis, designed a kind of photon crystal optics wave filter of non-impurity-doped structure; The photonic crystal of this non-impurity-doped structure has just changed the plated film order one time; But destructive the same very big to the periodic structure of photonic crystal, produced the defective mould.Structure is respectively
and
, and the variation of this structure of simulation study is to the influence of photonic crystal transport property.
A is a gallium arsenide; B is a silicon dioxide:
;
; Refractive index is respectively
;
; The photonic crystal thickness of dielectric layers is respectively:
;
, centre wavelength is got 532nm.
Simulation result is shown in accompanying drawing.Can see obviously that from accompanying drawing 2 periodicity is that 10 the strict periodic structure of photonic crystal
has tangible forbidden photon band at 460 ~ 630nm; The light transmission rate of forbidden band Mid Frequency is almost nil, and the forbidden band characteristic is very obvious.When plated film of structural change becomes
in proper order; Can see obviously that from accompanying drawing 3 the defective mould has appearred in the position that the photonic crystal band medium frequency equals centre wavelength
; It is 1 that transmitance sharply increases from 0, has realized the monochromatic light of the wavelength 532nm of selected center is filtered.
(Transfer Matrix Method, TMM) essence is in the space, to do finite difference to Maxwell equation to transfer matrix method, then it is become the form of transmission matrix.Calculate and to be converted into eigenvalue and to find the solution problem finding the solution photonic band gap.The Maxwell system of equations is done discretize, and the relation between the field in adjacent two layers space can be represented with a transmission matrix.Transmission matrix can connect electric field and the magnetic field on another aspect of the electric field on the aspect and magnetic field and next-door neighbour, so can it be extrapolated to whole photon crystal space.Thereby calculate the transmission coefficient and the reflection coefficient of photonic crystal.
For the 1-D photon crystal periodic structure, have:
Can obtain by
:
Reflection coefficient:
(2)
Reflectivity:
(3)
Transmission coefficient:
(4)
Transmissivity:
(5)
The reflection and the transmission property of 1-D photon crystal represented in formula (2), (4).For the periodic structure that m layer medium constitutes, gross thickness is d, can be obtained by Bloch theorem:
K wherein is the Bloch wave vector, finds the solution formula:
Can obtain the dispersion relation of one dimension periodic structure.
If medium is 2 layers, then have the transmission matrix of periodic structure to be [71]:
(9) for solving eigenvalue equation
can be obtained:
The Matlab programming is calculated just can the 1-D photon crystal forbidden band structure.
The energy gap that different photonic crystal dielectric material periodic structures produces is different; Select different photonic crystals for use; The centre wavelength of selecting must drop in this photonic crystal band structure, changes the plated film order, is also can in photonic crystal band, produce the defective mould at the defect layer of the new medium that do not mix; As shown in the figure, this defective mould is very big to the influence of photonic crystal transport property.
Claims (3)
1. the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm; It is characterized in that: wave filter comprises layer of photonic crystals (1) and lens element (2); The brilliant crystal layer of light (1) is arranged on lens element (2) surface, and layer of photonic crystals (1) is alternately superposeed each other by 10 layers of A dielectric layer and 10 layers of B dielectric layer and constitutes (AB)
5(BA)
5Type composite structure, described A are gallium arsenide, and B is a silicon dioxide, wherein (AB)
5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on the inboard of layer of photonic crystals (1), and is connected with lens element; Wherein (AB)
5Represent the compound medium layer of alternately stack formation of 5 layers of A medium and B medium, wherein the thickness of A dielectric layer is 38.118nm, and the thickness of B dielectric layer is 59.9nm, and this compound medium layer is arranged on layer of photonic crystals (2) outside.
2. the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm as claimed in claim 1; It is characterized in that: the refractive index of described A dielectric layer is
; The refractive index of B dielectric layer is
; The thickness of A dielectric layer does; The thickness of B dielectric layer is
, and centre wavelength is got 532nm.
3. the method for making of the non-impurity-doped layer photon crystal optics wave filter of filter range 430 ~ 630nm as claimed in claim 1 is characterized in that:
Step 1, get a lens element as substrate, with the substrate twin polishing, subsequent use;
Step 2, the substrate surface that processes is cleaned processing, adopt acidic cleaning solution and deionized water to distinguish cleaning base plate, substrate is placed on the hot plate dry then, 65 ° of temperature, 10 minutes time;
Step 3, substrate is put into vacuum coating equipment; On one surface, carry out the plated film of A medium; Gallium arsenide refractive index
; When centre wavelength is got 532nm; Its coating film thickness is
; Be 38.118nm; Dry cooling is 30 minutes behind the plated film; Carry out the plated film of B medium then on the surface that substrate is coated with the A media coating; The refractive index of silicon dioxide
; When centre wavelength is got 532nm; Its coating film thickness is
, i.e. 59.9nm, and dry cooling is 30 minutes behind the plated film;
Step 4, according to the method for step 3 hocket A medium and B medium plated film; Until 4 layers of A media coating of plating and 4 layers of B media coating, on substrate, forming structure is the photonic crystal compound plating rete of
;
Step 5, photon crystal structure plated film for proceeding the plated film of A medium gallium arsenide on the board structure of
; Thickness is 38.118nm; Dry cooling 30 minutes, on substrate, forming structure is the photonic crystal compound plating rete of
;
Step 6, photon crystal structure on the substrate plated film for carrying out the plated film of B medium silicon dioxide on the structure of
; Thickness is 119.8nm, and on substrate, forming structure is the photonic crystal compound plating rete of
;
Step 7, according to the method for step 3 hocket A medium and B medium plated film; Until 5 layers of A media coating of plating and 4 layers of B media coating; On substrate, forming structure is the photonic crystal compound plating rete of
, makes the wave filter that the surface is provided with
photon crystal structure.
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|---|---|---|---|
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|---|---|---|---|
| CN201210157929.6A CN102645695B (en) | 2012-05-21 | 2012-05-21 | Doped-layer-free photonic crystal optical fiber with filtering range of 430-630 nm and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103487936A (en) * | 2013-09-17 | 2014-01-01 | 上海大学 | Method for designing one-dimensional photonic crystal filter based on digital signal processing |
| CN114792739A (en) * | 2022-04-12 | 2022-07-26 | 大连大学 | Optical reflection enhancer on lower surface of solar cell based on photonic crystal composite structure |
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2012
- 2012-05-21 CN CN201210157929.6A patent/CN102645695B/en not_active Expired - Fee Related
Patent Citations (5)
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| CN1450366A (en) * | 2003-05-06 | 2003-10-22 | 中山大学 | Single-frequency single-angle transmitted total-angle high-reflection one-dimension photon crystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103487936A (en) * | 2013-09-17 | 2014-01-01 | 上海大学 | Method for designing one-dimensional photonic crystal filter based on digital signal processing |
| CN114792739A (en) * | 2022-04-12 | 2022-07-26 | 大连大学 | Optical reflection enhancer on lower surface of solar cell based on photonic crystal composite structure |
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| CN102645695B (en) | 2014-11-05 |
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