CN109030967A - Test the devices, systems, and methods of piezoelectric modulus - Google Patents
Test the devices, systems, and methods of piezoelectric modulus Download PDFInfo
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- CN109030967A CN109030967A CN201810414286.6A CN201810414286A CN109030967A CN 109030967 A CN109030967 A CN 109030967A CN 201810414286 A CN201810414286 A CN 201810414286A CN 109030967 A CN109030967 A CN 109030967A
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- 238000012360 testing method Methods 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000523 sample Substances 0.000 claims abstract description 382
- 238000001514 detection method Methods 0.000 claims abstract description 165
- 239000012528 membrane Substances 0.000 claims abstract description 127
- 238000012545 processing Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 238000009413 insulation Methods 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000007689 inspection Methods 0.000 claims description 3
- 241001274660 Modulus Species 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000007405 data analysis Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229920002521 macromolecule Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 208000034656 Contusions Diseases 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 239000002178 crystalline material Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229920002223 polystyrene Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/22—Measuring piezoelectric properties
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Abstract
The present invention relates to piezoelectric material detection technique field more particularly to a kind of devices, systems, and methods for testing piezoelectric modulus.The device of test piezoelectric modulus of the invention includes probe, the probe with external data processing device for connecting, the probe includes detection probe and piezo chips, when detection probe touching piezoelectric film is close to the surface of probe, probe can acquire the voltage signal of piezoelectricity film surface and piezo chips and be transmitted to external data processing device to which the piezoelectric modulus of piezoelectricity membrane sample be calculated.The devices, systems, and methods of test piezoelectric modulus of the invention can a surface based on piezoelectric film go to carry out the detection of piezoelectric modulus, without piezoelectric film is destroyed, operate fairly simple, detection efficiency is high.
Description
[technical field]
The present invention relates to piezoelectric material detection technique field more particularly to it is a kind of test the device of piezoelectric modulus, system and
Method.
[background technique]
Piezoelectric material is to be under pressure when acting on the crystalline material of voltage occur in both ends surface parts, and piezoelectric material is most heavy
The material parameter wanted is exactly piezoelectric modulus D33。
The mode of the piezoelectric modulus of existing measurement piezoelectric material is all by by piezoelectric film frustillatum, to small bulk
The upper and lower surface of piezoelectric film apply certain power, piezoelectricity is calculated by voltage that test piezoelectric film upper and lower surface generates
The piezoelectric modulus D of film33.Therefore, it requires to destroy piezoelectricity membrane sample when detecting every time, and has to the upper following table in piezoelectric film
Face simultaneously applied force, operating process is comparatively laborious, can only individually position is gone successively to detect one by one, piezoelectricity can not be directed to simultaneously
Multiple positions of film are detected, and detection efficiency is low, and testing result is not also very accurate.
[summary of the invention]
In view of the above-mentioned problems, the present invention provides a kind of devices, systems, and methods for testing piezoelectric modulus.
The scheme that the present invention solves technical problem is to provide a kind of device for testing piezoelectric modulus, is used to test piezoelectric film
The device of the piezoelectric modulus of sample, one surface earthing of piezoelectricity membrane sample, the test piezoelectric modulus includes probe, the spy
For head for connecting with external data processing device, the probe includes the detection probe and piezo chips of connection, the piezoelectricity core
One surface earthing of piece, when detection probe touching piezoelectricity membrane sample is close to the surface of probe, it is non-that probe can acquire piezoelectricity membrane sample
Earthed surface and the voltage signal on the ungrounded surface of piezo chips are simultaneously transmitted to external data processing device to be calculated
The piezoelectric modulus of piezoelectricity membrane sample.
Preferably, the probe further includes reference signal line, insulating layer and sample signal line, piezo chips and detection probe
Between separated by insulating layer, the ungrounded surface of the piezo chips is connect with reference signal line, the ungrounded table of piezoelectric film
Face is connect with sample signal line, when the detection probe touches piezoelectricity membrane sample, can in piezoelectricity membrane sample and piezo chips
A voltage signal is generated, the sample signal line is for acquiring the voltage signal generated on piezoelectricity membrane sample, the reference letter
Number line is used to acquire the voltage signal generated in pressure piezo chips, and the sample signal line and reference signal line are also used to and outside
Data processing equipment connection.
Preferably, the probe further comprises metal shell, and the metal shell is hollow structure, the piezoelectricity core
Piece, reference signal line, detection probe, insulating layer and sample signal line are at least partly housed in the hollow structure, and described exhausted
Tight between edge layer and metal shell, the metal shell are connect with gearshift, and a surface of the piezo chips is logical
Cross metal shell ground connection.
Preferably, the piezoelectricity membrane sample is individual piezoelectric film or piezoelectricity membrane sample includes conductive substrates and formation
Piezoelectric film in conductive substrates, the piezo chips are visited close to the surface of detection probe and the piezoelectricity membrane sample far from detection
The surface earthing of needle, the sample signal line are connect with detection probe, and the reference signal line and piezo chips are visited far from detection
The surface of needle connects.
Preferably, the piezoelectricity membrane sample is individual piezoelectric film or piezoelectricity membrane sample includes conductive substrates and formation
Piezoelectric film in conductive substrates, the detection probe ground connection are arranged and connect with piezo chips close to the surface of detection probe,
The sample signal line is connect with piezoelectricity membrane sample far from the surface of detection probe.
Preferably, the probe further includes reference signal line and sample signal line, the ungrounded surface of the piezo chips
It is connect with reference signal line, the ungrounded surface of piezoelectric film is connect with sample signal line, detection probe one end insulation, relatively
The other end it is conductive, one end of detection probe insulation and piezo chips are connected close to the surface of detection probe, and detection probe is conductive
One end be arranged close to piezoelectricity membrane sample, when the detection probe touches piezoelectricity membrane sample, piezoelectricity membrane sample and piezo chips
On can generate a voltage signal, the sample signal line is described for acquiring the voltage signal generated on piezoelectricity membrane sample
Reference signal line is used to acquire the voltage signal generated in pressure piezo chips, and the sample signal line and reference signal line are also used to
It is connect with external data processing device.
Preferably, the probe includes multiple detection probes, and multiple detection probes are arranged in array or linearly arrange.
The present invention also provides a kind of system for testing piezoelectric modulus, the system of the test piezoelectric modulus includes as described above
Test piezoelectric modulus device and data processing equipment, it is described probe transmission detection two voltage signals give data processing dress
Connection is set, the piezoelectricity system of piezoelectricity membrane sample is calculated based on two voltage signals that probe detects for the data processing equipment
Number.
The present invention also provides a kind of methods for testing piezoelectric modulus, use the dress of test piezoelectric modulus as described above
Set, it is described test piezoelectric modulus method the following steps are included:
Step S1: piezoelectricity membrane sample to be measured is placed；
Step S2: starting detection probe detects piezoelectricity membrane sample to be measured so that exporting piezoelectric film to be measured simultaneously
Sample and the voltage signal on piezo chips surface.
Preferably, it is described test piezoelectric modulus method after step S1 the following steps are included:
S11: the detection range of the size setting detection probe based on piezoelectricity membrane sample to be measured.
Compared with prior art, the device of test piezoelectric modulus of the invention includes probe, the probe for outside
Data processing equipment connection, the probe includes detection probe and piezo chips, when detection probe touching piezoelectric film is close to probe
Surface when, probe can acquire piezoelectricity film surface and piezo chips voltage signal and be transmitted to external data processing device from
And the piezoelectric modulus of piezoelectricity membrane sample is calculated.The device of test piezoelectric modulus of the invention can one based on piezoelectric film
Surface is gone to carry out the detection of piezoelectric modulus, without piezoelectric film is destroyed, operates fairly simple, detection efficiency height.
Compared with prior art, the system of test piezoelectric modulus of the invention equally has the above advantages.
Compared with prior art, the method for test piezoelectric modulus of the invention equally has the above advantages.
[Detailed description of the invention]
Fig. 1 is the structural schematic diagram of the device of the test piezoelectric modulus of first embodiment of the invention.
Fig. 2 is the structural schematic diagram of the probe in Fig. 1 of first embodiment of the invention.
Fig. 3 is the schematic cross-sectional view of detector in Fig. 2 of first embodiment of the invention.
Fig. 4 is voltage change when detector touches piezoelectric film in first embodiment of the invention on piezoelectric film and piezo chips
Schematic diagram.
Fig. 5 is the schematic diagram that the detector in Fig. 2 of first embodiment of the invention detects piezoelectricity membrane sample.
Fig. 6 is a kind of deformation that the detector in Fig. 2 of first embodiment of the invention detects piezoelectricity membrane sample
Schematic diagram.
Fig. 7 is the execution process signal that the control program of device of piezoelectric modulus is tested in the first embodiment of the present invention
Figure.
Fig. 8 is the flow diagram that the method for piezoelectric modulus is tested in the third embodiment of the present invention.
Fig. 9 is in the third embodiment of the present invention using the test piezoelectricity system of the test piezoelectric modulus device of first embodiment
The flow diagram of counting method.
Description of symbols: 10, the device of piezoelectric modulus is tested；11, gearshift；13, it pops one's head in；15, sample stage；17,
Workbench；20, piezoelectricity membrane sample；21, piezoelectric film；22, substrate；131, detector；133, connector；135, fixing piece；137,
Elastic component；1311, metal shell；1312, reference signal line；1313, piezo chips；1315, insulating layer；1317, detection probe；
1319, sample signal line.
[specific embodiment]
In order to make the purpose of the present invention, technical solution and advantage are more clearly understood, below in conjunction with attached drawing and embodiment,
The present invention will be described in further detail.It should be appreciated that described herein, specific examples are only used to explain the present invention, and
It is not used in the restriction present invention.
Referring to FIG. 1, first embodiment of the invention provides a kind of device 10 for testing piezoelectric modulus, it is used to test piezoelectricity
The piezoelectric modulus of material, particularly for testing the piezoelectric modulus of piezoelectric film, the device 10 of the test piezoelectric modulus includes work
Platform 17, sample stage 15, gearshift 11 and probe 13, the sample stage 15 is for carrying piezoelectricity membrane sample 20 to be detected and connecing
Ground setting, institute's displacement apparatus 11 and sample stage 15 are arranged on workbench 17, and institute's displacement apparatus 11 is connect with probe 13
And probe 13 can be driven mobile relative to sample stage 15, the probe 13 is connect with external data processing device (not shown), when
Probe 13 can collect voltage signal and the transmission on piezoelectric film ungrounded surface when touching the piezoelectric film on piezoelectricity membrane sample 20
To external data processing device.Institute's displacement apparatus 11 can at least drive probe 13 in the direction perpendicular to piezoelectricity membrane sample 20
Upper movement, institute's displacement apparatus 11 are preferably three-dimensional moving device, it can probe 13 is driven to carry out on three dimension directions
It is mobile, convenient for the test scope of probe 13 is adjusted flexibly.The probe 13 can be under the drive of gearshift 11 towards close to piezoelectricity
The direction of membrane sample 20 is mobile, and when probe 13 touches the piezoelectric film on piezoelectricity membrane sample 20, probe 13 can detecte pressure
The voltage signal of the ungrounded surface generation of electrolemma is simultaneously transmitted to external data processing device, and external data processing device passes through into one
The piezoelectric modulus of the available piezoelectric film of the Data Analysis Services of step.(nouns of locality are waited only up and down mentioned in the present invention
It is limited to the relative position in given view, rather than absolute position, it will be understood that given view planar carries out 180 ° of rotations
Afterwards, word "lower" in position can replace with position word "upper".) it is appreciated that being used as a kind of deformation, the sample stage 15 can save
Slightly, piezoelectricity membrane sample 20 is directly placed on the workbench 17 of ground connection setting.It is appreciated that the external data processing dress
It sets and can be oscillograph, computer or other data acquisition equipments.
Referring to FIG. 2, the probe 13 includes detector 131, connector 133, fixing piece 135 and elastic component 137, it is described
Fixing piece 135 with gearshift 11 for being fixedly connected, and described 137 one end of elastic component is connect with fixing piece 135, and opposite is another
End is connect with connector 133, and the connector 133 is connect with detector 131, and the detector 131 is also used to and external data
Processing unit connection, the detector 131 are used to touch piezoelectricity membrane sample 20 close to the surface of probe 13 and obtain piezoelectric film sample
The voltage signal that generates on the ungrounded surface of the piezoelectric film of product 20 and it is transmitted to external data processing device.It is appreciated that institute
Stating elastic component 137 is spring, and the connector 133 is linear bearing.
Please also refer to Fig. 2 and Fig. 3, the detector 131 includes metal shell 1311, reference signal line 1312, piezoelectricity
Chip 1313, insulating layer 1315, detection probe 1317 and sample signal line 1319.The metal shell 1311 and connector 133
One end far from elastic component 137 connects, and the metal shell 1311 is a hollow structure and ground connection setting, the piezo chips
1313, insulating layer 1315 is whole is housed in the hollow structure, the reference signal line 1312, detection probe 1317 and sample letter
Number 1319 partial receipt of line is in the hollow structure.Insulating layer 1315 is located in hollow structure, and be filled in piezo chips 1313,
Reference signal line 1312, detection probe 1317 and sample signal line 1319 are located at the periphery in 1311 hollow structure of metal shell,
Make detection probe 1317, reference signal line 1312, sample signal line 1319, piezo chips 1313 respectively and in metal shell 1311
Wall insulation, and separated between piezo chips 1313 and detection probe 1317 by insulating layer 1315.In addition, insulating layer 1315 and gold
Belong to and gap is not present between 1311 inner wall of shell, both prevents from occurring in the detection process occurring that detection is caused to be tied with respect to shaking
Fruit is not accurate.The piezo chips 1313 have two opposite surfaces, and a surface is connect with reference signal line 1312, another
A surface is connected to metal shell 1311 to be grounded by the metal shell 1311.Specifically, the reference signal line
1312 one end are connect with piezo chips 1313 far from the surface of detection probe 1317, and the other end is used for and external data processing device
It connects, the reference generated on available surface of the piezo chips 1313 far from detection probe 1317 of the reference signal line 1312
Voltage signal size is simultaneously transmitted to external data processing device.Described 1319 one end of sample signal line and detection probe 1317 connect
It connects, the other end is used to connect with external data processing device, the available piezoelectricity membrane sample 20 of the sample signal line 1319
The sample voltage signal magnitude of ungrounded surface generation is simultaneously transmitted to external data processing device.
It is appreciated that the detection probe 1317 is made of conductive material.It is appreciated that the material of the metal shell 1311
Of fine quality to be selected as stainless steel, the material of the insulating layer 1315 is preferably polystyrene.In addition, the insulating layer 1315 can save
Slightly, as long as ensuring to insulate between piezo chips 1313 and detection probe 1317, and piezo chips 1313, detection probe 1317 and gold
Belong to 1311 inner wall insulation of shell, for example is located in metal shell 1311 separately through positioning device.It is appreciated that described
Piezo chips 1313 can be benchmark piezoelectric film, and such as benchmark pvdf membrane, the benchmark piezoelectric film i.e. its piezoelectric modulus meets application
Demand, and its thickness and piezoelectric modulus are it is known that the amount of charge and power that the benchmark piezoelectric film after being under pressure, generates
Size is directly proportional.It is appreciated that the metal shell 1311 can be omitted, table of the piezo chips 1313 close to detection probe 1317
Face is connect by a signal wire independent grounding, the insulating layer 1315 with connector 133, and insulating layer 1315 is equivalent to one at this time
Insulation crust, piezo chips 1313 are whole to be housed in insulating layer 1315, the detection probe 1317,1312 and of reference signal line
1319 partial receipt of sample signal line is in insulating layer 1315.
When work, when detector 131 removes the piezoelectric film on touching piezoelectricity membrane sample 20, detection probe 1317 can be to piezoelectricity
Film applies a power, and since the piezoelectric effect of piezoelectric film itself can generate an electric field on piezoelectric film, and piezoelectric film is close
The surface earthing of sample stage 15 is arranged, therefore the surface that piezoelectric film is in contact with detection probe 1317 can generate sample voltage letter
Number, the sample signal line 1319 can detect the sample voltage signal and be transmitted to external data processing device.In addition, due to
The effect of active force and reaction force, detection probe 1317 will receive the reaction force of piezoelectricity membrane sample 20, and pass through insulating layer
1315 are applied to piezo chips 1313, since the piezoelectric effect of piezo chips 1313 can generate an electricity in piezo chips 1313
, in addition, the piezo chips 1313 are arranged close to the surface earthing of detection probe 1317, so can be remote in piezo chips 1313
A reference voltage signal is generated on surface from detection probe 1317, the reference signal line 1312 can detecte the reference
Voltage signal is simultaneously transmitted to external data processing device.External data processing device by collected reference voltage signal and
The piezoelectric modulus of the piezoelectric film on piezoelectricity membrane sample 20 can be obtained by further Data Analysis Services for sample voltage signal.
Referring to FIG. 4, it is appreciated that the device 10 of test piezoelectric modulus of the invention is in the reality for carrying out piezoelectricity membrane sample 20
When border measures, it will usually take the standard sample of a known piezoelectric modulus as reference, next with specific calculating process
To be illustrated explanation to the Data Analysis Services of external data processing device.
The calculation formula of piezoelectric modulus are as follows: piezoelectric modulus D33=k*V1/V0, wherein V1Represent the generation of piezoelectricity membrane sample 20
Voltage signal size, V0The voltage signal size of the generation of piezo chips 1313 is represented, k represents a proportionality coefficient.To be measured
Piezoelectricity membrane sample 20 detected before, first to piezoelectric modulus D known to one33Standard piezoelectric membrane sample detected, thus
Obtain coefficient k, k=D33 marks* V0 mark/V1 mark, wherein V0 markAnd V1 markIt can be obtained by detection, D33 marksBelong to known parameters.
Piezoelectricity membrane sample 20 to be measured is detected to obtain V again1 sampleAnd V0 sample, V1 sampleRepresent piezoelectricity membrane sample 20 to be measured
On 21 surface of piezoelectric film voltage signal, V0 sampleWhen representative detects piezoelectric film sample 20 to be measured in piezo chips 1313
The voltage signal of generation obtains the piezoelectric modulus D of the piezoelectric film on piezoelectricity membrane sample 2033=(D33 marks* V0 mark* V1 sample)/(V1 mark*
V0 sample).It is appreciated that the coefficient k is known parameter after a debugging of standard piezoelectric membrane sample 20, that is, detecting
When the piezoelectric modulus of piezoelectricity membrane sample 20 to be measured, standard piezoelectric membrane sample 20 is not needed to reuse as reference, Ke Yizhi
It connects and piezoelectricity membrane sample 20 to be measured is detected.
It is appreciated that being used as a kind of deformation, the detector 131 be can be used alone, i.e., the described fixing piece 135, elasticity
Part 137 and connector 133 can be omitted.When detection probe 1317 removes touching piezoelectricity membrane sample 20, based on active force and anti-work
Principle firmly, the piezoelectricity membrane sample 20 can also be conducted to 1,317 1 reaction forces of detection probe and by insulating layer 1315
To piezo chips 1313, to generate a voltage signal respectively in piezo chips 1313 and piezoelectric film 21 simultaneously, reference is believed
Number line 1312 and sample signal line 1319 detect piezo chips 1313 and voltage signal on piezoelectric film 21 respectively and are transmitted to
External data processing device.
In addition, it is to be appreciated that deforming as another kind, the detection probe 1317 is with piezo chips 1313 close to detection
The surface of probe 1317 is connected by an elasticity transition part (not shown), and the elasticity transition part is isolation material, the piezoelectricity
The reaction force that membrane sample 20 is applied to detection probe 1317 can directly be conducted by elasticity transition part to piezo chips 1313
Close to the surface of detection probe 1317.It is further appreciated that directly will test probe 1317 be fabricated to one end insulate one end conduction, will
One end that detection probe 1317 insulate is connect with piezo chips 1313 close to the surface of detection probe 1317, and detection probe 1317 is led
Touching piezoelectricity membrane sample 20 is removed in one end of electricity.
As long as being appreciated that detection probe 1317 is connected with piezo chips 1313, and piezoelectricity membrane sample 20 and piezoelectricity core
Piece 1313 is uniform to flank ground, and the single-contact formula pressing detection of the invention to piezoelectricity membrane sample 20 can be realized.Company herein
Connecing, which can be, is directly connected to, and is also possible to be indirectly connected with, as long as detection probe 1317 is detected with the contact of piezoelectricity membrane sample 20
When active force caused by reaction force can exert a force to piezo chips 1313, can be detected.
Please also refer to Fig. 2 and Fig. 5, piezoelectricity membrane sample 20 of the invention refers to the PVDF being formed in situ in substrate 22
(polyvinylidene fluoride, polyvinylidene fluoride) film 21, the pvdf membrane 21 are piezoelectric film 21, i.e. piezoelectric film
Sample 20 includes substrate 22 and pvdf membrane 21 simultaneously.It is appreciated that described be formed in situ refers to passing through of macromolecule membrane
Learn vapor deposition, physical vapour deposition (PVD), the conventional approaches such as coating are formed in substrate surface, basic thickness can maintain 9 μm with
Under, therefore the macromolecule membrane of very thin thickness can be formed, greatly improve resolution ratio.And for many semiconductor precision devices
Part, substrate 22 may be directly wafer etc., it may be considered that piezoelectricity membrane sample 20 is directly with the side of this substrate 22 and piezoelectric film 21
Formula measures.It is further appreciated that the piezoelectricity membrane sample 20 is also possible to simple piezoelectric film, it is such as existing currently on the market
The piezoelectric polymer film product of sale is centainly answered in general, the piezoelectric polymer film of this finished product needs first to be drawn high to have
Power is then again by being bonded in substrate, and the macromolecule membrane thickness that such method is formed is at 30 μm or more.
When specific test, when piezoelectricity membrane sample 20 is placed on sample stage 15, substrate 22 is arranged close to sample stage 15, by
Need to carry out electric signal conduction in substrate 22, the substrate 22 must be conductive material, preferably metal material.The substrate 22 is logical
The ground connection of sample stage 15 is crossed, when the detection probe 1317 removes touching pressing piezoelectric film 21, can be visited in piezoelectric film 21 close to detection
The surface of surface and piezo chips 1313 far from detection probe 1317 of needle 1317 all generates a voltage signal, wherein detection is visited
Needle 1317 connects with piezo chips 1313 is isolated between the earth's surface by insulating layer 1315.Sample signal line 1319 can pass through detection
Probe 1317 collects the sample voltage signal that piezoelectric film 21 generates on the surface of detection probe 1317 and is transmitted to outside
Data processing equipment, reference signal line 1312, which can collect, to be generated on surface of the piezo chips 1313 far from detection probe 1317
Reference voltage signal is simultaneously transmitted to external data processing device, and external data processing device compares two voltage signals and passes through number
The piezoelectric modulus of piezoelectric film 21 to be measured is obtained according to processing.The device 10 of test piezoelectric modulus of the invention can be based on piezoelectric film
The surface that sample 20 is provided with piezoelectric film 21 is detected, and is realized single side detection, is not needed piezoelectric film 21 from substrate
It is taken off on 22 to being destroyed to piezoelectricity membrane sample 20, and existing test platform is required piezoelectric film 21 from substrate 22
On take off after again while being detected on two surfaces of piezoelectric film 21 to obtain the piezoelectric modulus of piezoelectric film 21, it is of the invention
The device 10 for testing piezoelectric modulus has easy to use, can not destroy piezoelectricity membrane sample especially such as fine chip sample, with
And the advantage that detection efficiency is high.
In addition, it is to be appreciated that the device 10 of test piezoelectric modulus of the invention is equally applicable to individual piezoelectric film
21 are detected.Piezoelectric film 21 is placed on sample stage 15, the ground connection setting of sample stage 15, when detector 131 removes touching piezoelectricity
When film 21, a sample voltage letter can be generated respectively on the surface of detector 131 and piezo chips 1313 in piezoelectric film 21
Number and reference voltage signal, reference signal line 1312 detects the reference voltage signal and is transmitted to external data processing device,
Sample signal line 1319 detects the sample voltage signal and is transmitted to external data processing device, and external data processing device passes through
Crossing further Data Analysis Services can be obtained the piezoelectric modulus of piezoelectric film 21.
Referring to FIG. 6, the sample signal line 1319 is also connect with sample stage 15 or substrate 22 as a kind of deformation, this
When sample stage 15 and substrate 22 it is earth-free, and will test the setting of the ground connection of probe 1317 and detection probe 1317 and piezo chips 1313
It is connected close to the surface of sample stage 15.When the detection probe 1317 goes touching piezoelectric film 21 close to the surface of detection probe 1317
When, detection probe 1317 is applied to 21 1 active forces of piezoelectric film, and piezoelectric film 21 can generate one due to the piezoelectric effect of itself
Electric field is arranged since detection probe 1317 is grounded, so the surface potential that piezoelectric film 21 is contacted with detection probe 1317 is zero, because
This can generate a voltage signal on surface of the piezoelectric film 21 far from detection probe 1317 namely produce close to 15 surface of sample stage
Raw sample voltage signal, the sample signal line 1319 are transmitted to external data processing dress after detecting the sample voltage signal
It sets.In addition, piezoelectric film 21 can give detection probe 1,317 1 reaction forces, thus to piezo chips 1313 close to detection probe
1317 surface applies a power, can equally generate an electric field in piezo chips 1313, due to piezo chips 1313 and detection
The surface earthing setting that probe 1317 contacts, therefore one can be generated on surface of the piezo chips 1313 far from detection probe 1317
A reference voltage signal, the reference signal line 1312 can detecte the reference voltage signal and be transmitted to external data processing
Device.The piezoelectric modulus of same available piezoelectric film 21 is analyzed by the comparison of external data processing device.
In addition, in other embodiments of the invention, the device 10 of the test piezoelectric modulus still further comprises control
Device (not shown), the controller is connect with gearshift 11 and the running of controllable gearshift 11.It is appreciated that the control
Operation interface (not shown) is provided on device processed, user can go the control journey of setting gearshift 11 by the operation interface
Sequence, to set movement travel and the track of gearshift 11.It needs to detect number for example, user sets on the controller
After detection range, controller, that is, command displacement device 11 is scanned formula to piezoelectricity membrane sample 20 according to the program of setting and examines
It surveys, a secondary program can be executed, point by point scanning test is carried out to piezoelectric film 21, test result is more accurate, and testing efficiency significantly mentions
It rises.Next exemplary illustrated to do with control program shown in fig. 7, it is not limited here.A certain position is arranged
For origin, space three-dimensional (XYZ) coordinate system is established with origin, as shown in fig. 7, when starting to execute detection operation, controller control
Gearshift 11 processed drives probe 13 to be moved to origin, then controls the sweep starting point that probe 13 is moved to the direction XY, then controls
Probe 13 is moved to the initial point of Z-direction up stroke, then controls probe 13 and be moved at Z-direction maximum position.It is appreciated that visiting
First 13 probes 13 when being moved at Z-direction maximum position can be touched with certain speed and piezoelectric film 21.Controller is controlled again
The drive of gearshift 11 probe 13 processed is moved to the initial point of Z-direction up stroke, so as to complete the detection debugging stage.Then exist
Setting detection number, spacing distance and detection range, the detection range refer on the direction XY in the operation interface of controller
Detection range.Subsequent controller command displacement device 11 drive probe 13 according to preset interval distance carry out in X-direction by
Spot scan detects, and after the detection in X-direction is completed, controller control probe 13 is moved to origin, then executes the point-by-point of Y-direction
Scanning Detction, entire detection process terminates after the completion of the Scanning Detction in Y-direction.It is appreciated that the direction XY is
It is parallel to the reference axis on 21 surface of piezoelectric film, Z-direction is perpendicular to the reference axis on 21 surface of piezoelectric film.
It is appreciated that gearshift 11 can also drive probe 13 to carry out sweeping in X-direction point by point according to preset interval distance
Detection is retouched, a line is scanned through and moves certain spacing distance in the Y direction again later, then executes the point by point scanning inspection in X-direction
It surveys, until completing whole scannings in detection range.It is further appreciated that specific detection stroke can by the controller come
It is set, it is numerous to list herein.
It is appreciated that being used as a kind of deformation, the device 10 of the test piezoelectric modulus may include multiple probes 13, work as survey
It, can be in the running of a Z-direction when device 10 of pressure testing electrostrictive coefficient is scanned formula test to piezoelectricity membrane sample 20
Piezoelectricity membrane sample 20 is completed to detect, or progressive scan detection can be carried out to piezoelectricity membrane sample 20, relative to single probe
13 point by point scanning formula detection greatly improves detection efficiency.It is deformed as another kind, the probe 13 includes that multiple detections are visited
Needle 1317, multiple detection probes 1317 are arranged in array or linearly arrange, when the device 10 of test piezoelectric modulus is to piezoelectric film
When sample 20 is scanned formula test, piezoelectricity membrane sample 20 can be completed to detect in the running of a Z-direction, or
Piezoelectricity membrane sample 20 can be detected line by line, the point by point scanning formula detection relative to single detection probe 1317 greatly promotes
Detection efficiency.
Second embodiment of the invention also provides a kind of system for testing piezoelectric modulus comprising survey described in first embodiment
The device and data processing equipment (not shown) of pressure testing electrostrictive coefficient, the probe 13 connect with data processing equipment signal, pop one's head in
The voltage signal on the ungrounded surface on the ungrounded surface and piezo chips of 13 acquisition piezoelectricity membrane samples simultaneously sends data processing to
Device, data processing equipment receive and based on probe 13 collected piezoelectricity membrane samples ungrounded surface and piezo chips it is non-
The voltage signal of earthed surface is analyzed to obtain the piezoelectric modulus of piezoelectricity membrane sample.Signal connection can be wired connection or
Person is wirelessly connected, such as passes through Bluetooth transmission, wifi transmission or signal wire transmission etc..
Referring to FIG. 8, third embodiment of the invention also provides a kind of method for testing piezoelectric modulus, the test piezoelectricity system
Several method the following steps are included:
Detection probe and piezo chips are provided, wherein piezo chips have opposite two surfaces, and piezo chips and detection are visited
Needle connection and piezo chips wherein surface earthing setting；
Piezoelectricity membrane sample to be detected is provided and makes a surface earthing of piezoelectricity membrane sample；
By detection probe, to piezoelectricity membrane sample, wherein progress contact pressing detection in a surface obtains the piezoelectricity membrane sample
The reference voltage signal that the ungrounded surface of voltage signal and piezo chips that ungrounded surface generates generates；
The piezoelectric modulus of piezoelectricity membrane sample is obtained by two voltage signal.
It is appreciated that the above-mentioned detection to piezoelectricity membrane sample can be and directly detect to piezoelectric film itself merely,
It can be and the piezoelectric film product being formed in conductive substrates is detected together, as long as meeting makes one surface earthing of piezoelectric film i.e.
It can.When piezoelectricity membrane sample is simple piezoelectric film, pressing detection can be carried out based on any surface of piezoelectric film；Work as piezoelectric film
Sample be comprising conductive substrates and be formed in conductive substrates piezoelectric film when, be preferably based on pressing have piezoelectric film surface go
It is detected.
It is appreciated that when surface and piezo chips of the piezoelectricity membrane sample far from detection probe connect close to the surface of detection probe
When ground, detection probe is conductive material, can connect or pass through insulation between detection probe and piezo chips by insulating layer
Elasticity transition part connection with realize between the two insulation connection or detection probe one end insulation, the opposite other end
Conduction, and one end of detection probe conduction is for touching piezoelectricity membrane sample close to the surface of detection probe, one end of insulation with
Piezo chips connect, and the voltage signal generated on piezoelectricity membrane sample is then led to by piezoelectricity membrane sample close to the surface of detection probe
It crosses detection probe to pass, the voltage signal generated in piezo chips is transmitted by piezo chips far from the surface of detection probe
It goes out.When the detection probe is ground connection setting, described detection probe one end is connect with piezo chips, and opposite one end is gone to touch
The voltage signal that bruising electrolemma sample generates on the surface of detection probe, piezoelectricity membrane sample is by piezoelectricity membrane sample far from inspection
The surface of probing needle passes, and the voltage signal generated in piezo chips is passed by piezo chips far from the surface of detection probe
It passs away.
In the third embodiment of the present invention, the calculation formula of piezoelectric modulus are as follows: piezoelectric modulus D33=k*V1/V0, wherein
V1Represent the voltage signal size on 21 surface of piezoelectric film, V0The voltage signal size of the generation of piezo chips 1313 is represented, k represents one
A proportionality coefficient.Due to using standard piezoelectric membrane sample, so D33 marksFor known parameters, V0 markAnd V1 markThrough the invention
The test of device 10 of the test piezoelectric modulus of one embodiment obtains.It is, therefore, to be understood that the purpose of the step S1 and S2 be for
Obtain proportionality coefficient k=D33 marks* V0 mark/V1 mark。
Referring to FIG. 9, specifically, using the device 10 of test piezoelectric modulus as described above, the test piezoelectric modulus
Device 10 include detection probe 1317, reference signal line 1312, piezo chips 1313 and sample signal line 1319, piezo chips
There are two opposite surface, one of surface earthing, another surfaces to connect with reference signal line for 1313 tools, the sample letter
Number line 1319 is by detection probe 1317 or directly connect with the ungrounded surface of piezoelectric film 21, when detection probe 1317 goes to touch
A voltage letter can be generated when piezoelectric film 21 is close to the surface of detection probe 1317 on piezoelectric film 21 and piezo chips 1313
Number.
It include following step to the method for piezoelectric film sample test piezoelectric modulus using the device 10 of above-mentioned test piezoelectric modulus
It is rapid:
Step S1: standard piezoelectric membrane sample is placed；
Step S2: standard piezoelectric membrane sample is detected；
Step S3: piezoelectricity membrane sample to be measured is placed；
Step S4: the detection range of detection probe is set according to the size of piezoelectricity membrane sample to be measured；And
Step S5: traveling probe is scanned formula detection so that exporting piezoelectricity to be measured simultaneously to piezoelectricity membrane sample to be measured
The voltage signal on membrane sample surface and piezo chips surface is to obtain the piezoelectric modulus of piezoelectricity membrane sample to be measured.
It is appreciated that the step S1 and step S2 can be omitted, the coefficient k passes through a standard piezoelectric membrane sample tune
It is then known parameter after examination, i.e., when detecting the piezoelectric modulus of piezoelectricity membrane sample to be measured, does not need to reuse standard pressure
Electrolemma sample can directly detect piezoelectricity membrane sample to be measured as reference.
It is appreciated that in the step S4, multiple test points and/or more can be set in the areal extent of piezoelectric film
A detection position, so that it is guaranteed that testing result is more accurate, detection efficiency is higher.
Single-point detection is carried out to piezoelectricity membrane sample it is appreciated that detection probe can also be moved in the step S5, together
The piezoelectric modulus of the available piezoelectricity membrane sample of sample.In addition, it is to be appreciated that after being scanned formula detection in the step S5
A series of testing result is obtained, can be calculated based on existing K mean cluster algorithm, weighted mean method or other algorithms
The average value of multiple testing results is obtained, so that testing result is more accurate.
Compared with prior art, the device of test piezoelectric modulus of the invention includes probe, the probe for outside
Data processing equipment connection, the probe includes detection probe and piezo chips, when detection probe touching piezoelectric film is close to probe
Surface when, probe can acquire piezoelectricity film surface and piezo chips voltage signal and be transmitted to external data processing device from
And the piezoelectric modulus of piezoelectricity membrane sample is calculated.The device of test piezoelectric modulus of the invention can one based on piezoelectric film
Surface is gone to carry out the detection of piezoelectric modulus, without piezoelectric film is destroyed, operates fairly simple, detection efficiency height.
Compared with prior art, the system of test piezoelectric modulus of the invention equally has the above advantages.
Compared with prior art, the method for test piezoelectric modulus of the invention equally has the above advantages.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in original of the invention
Made any modification within then, equivalent replacement and improvement etc. should all be comprising within protection scope of the present invention.
Claims (10)
1. a kind of device for testing piezoelectric modulus, is used to test the piezoelectric modulus of piezoelectricity membrane sample, the piezoelectricity membrane sample one
Surface earthing, it is characterised in that: the device of the test piezoelectric modulus includes probe, and the probe with external data for handling
Device connection, the probe include the detection probe and piezo chips of connection, one surface earthing of piezo chips, when detection is visited
When needle touches surface of the piezoelectricity membrane sample close to probe, probe can acquire the ungrounded surface of piezoelectricity membrane sample and piezo chips are non-
The voltage signal of earthed surface is simultaneously transmitted to external data processing device to which the piezoelectric modulus of piezoelectricity membrane sample be calculated.
2. the device of test piezoelectric modulus as described in claim 1, it is characterised in that: the probe further includes reference signal
Line, insulating layer and sample signal line, are separated between piezo chips and detection probe by insulating layer, and the non-of the piezo chips connects
Ground surface is connect with reference signal line, and the ungrounded surface of piezoelectric film is connect with sample signal line, when the detection probe is touched
When piezoelectricity membrane sample, a voltage signal can be generated on piezoelectricity membrane sample and piezo chips, the sample signal line is for adopting
The voltage signal generated on collection piezoelectricity membrane sample, the reference signal line are used to acquire the voltage letter generated in pressure piezo chips
Number, the sample signal line and reference signal line are also used to connect with external data processing device.
3. the device of test piezoelectric modulus as claimed in claim 2, it is characterised in that: the probe further comprises outside metal
Shell, the metal shell are hollow structure, the piezo chips, reference signal line, detection probe, insulating layer and sample signal line
It is at least partly housed in the hollow structure, and tight between the insulating layer and metal shell, the metal shell and position
One surface of moving device connection, the piezo chips is grounded by metal shell.
4. the device of test piezoelectric modulus as claimed in claim 2, it is characterised in that: the piezoelectricity membrane sample is individually to press
Electrolemma or piezoelectricity membrane sample include conductive substrates and the piezoelectric film being formed in conductive substrates, and the piezo chips are close to inspection
The surface of probing needle and the surface earthing of the piezoelectricity membrane sample far from detection probe, the sample signal line and detection probe connect
It connects, the reference signal line and piezo chips are connected far from the surface of detection probe.
5. the device of test piezoelectric modulus as claimed in claim 2, it is characterised in that: the piezoelectricity membrane sample is individually to press
Electrolemma or piezoelectricity membrane sample include conductive substrates and the piezoelectric film being formed in conductive substrates, and the detection probe ground connection sets
It sets and is connect with piezo chips close to the surface of detection probe, the sample signal line and piezoelectricity membrane sample are far from detection probe
Surface connection.
6. the device of test piezoelectric modulus as described in claim 1, it is characterised in that: the probe further includes reference signal line
It is connect with the ungrounded surface of sample signal line, the piezo chips with reference signal line, the ungrounded surface of piezoelectric film and sample
The connection of product signal wire, detection probe one end insulation, the opposite other end is conductive, one end of detection probe insulation and piezoelectricity core
Piece is connected close to the surface of detection probe, and one end of detection probe conduction is arranged close to piezoelectricity membrane sample, when the detection probe
When touching piezoelectricity membrane sample, a voltage signal can be generated on piezoelectricity membrane sample and piezo chips, the sample signal line is used
In the voltage signal generated on acquisition piezoelectricity membrane sample, the reference signal line is used to acquire the voltage generated in pressure piezo chips
Signal, the sample signal line and reference signal line are also used to connect with external data processing device.
7. the device of test piezoelectric modulus as described in claim 1, it is characterised in that: the probe includes that multiple detections are visited
Needle, multiple detection probes are arranged in array or linearly arrange.
8. a kind of system for testing piezoelectric modulus, it is characterised in that: the system of the test piezoelectric modulus includes such as claim
The device and data processing equipment of the described in any item test piezoelectric moduluses of 1-7, two voltages letter of the probe transmission detection
Number data processing equipment connection is given, piezoelectricity is calculated based on two voltage signals detecting of probe in the data processing equipment
The piezoelectric modulus of membrane sample.
9. a kind of method for testing piezoelectric modulus uses the dress such as the described in any item test piezoelectric moduluses of claim 1-7
Set, it is characterised in that: it is described test piezoelectric modulus method the following steps are included:
Step S1: piezoelectricity membrane sample to be measured is placed；
Step S2: starting detection probe detects piezoelectricity membrane sample to be measured so that exporting piezoelectricity membrane sample to be measured simultaneously
And the voltage signal on piezo chips surface.
10. the method for test piezoelectric modulus as claimed in claim 9, it is characterised in that: the method for the test piezoelectric modulus
After step S1 the following steps are included:
S11: the detection range of the size setting detection probe based on piezoelectricity membrane sample to be measured.
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| CN109541331A (en) * | 2019-02-13 | 2019-03-29 | 黄河科技学院 | It is a kind of for measuring the experimental provision of piezoelectric material performance |
| CN110579651A (en) * | 2019-09-05 | 2019-12-17 | 佛山市卓膜科技有限公司 | Piezoelectric coefficient measuring device |
| CN113049889A (en) * | 2021-02-01 | 2021-06-29 | 佛山市卓膜科技有限公司 | Detection method and measurement device for piezoelectric coefficient of piezoelectric film |
| RU2753970C1 (en) * | 2020-12-08 | 2021-08-24 | федеральное государственное бюджетное образовательное учреждение высшего образования "Казанский национальный исследовательский технический университет им. А.Н.Туполева - КАИ" | Device for measuring piezoelectric effect voltage in polymers |
| CN113341196A (en) * | 2021-04-13 | 2021-09-03 | 电子科技大学 | High-flux micro-area electrical property detection system and method based on Van der pol method |
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