CN108982982A - The method of probe and test piezoelectric modulus - Google Patents

The method of probe and test piezoelectric modulus Download PDF

Info

Publication number
CN108982982A
CN108982982A CN201810412065.5A CN201810412065A CN108982982A CN 108982982 A CN108982982 A CN 108982982A CN 201810412065 A CN201810412065 A CN 201810412065A CN 108982982 A CN108982982 A CN 108982982A
Authority
CN
China
Prior art keywords
probe
detection probe
sample
piezo chips
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810412065.5A
Other languages
Chinese (zh)
Inventor
吴露
张千
王开安
陈健强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu Dachao Technology Co.,Ltd.
Original Assignee
Chengdu Rui Core Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu Rui Core Technology Co Ltd filed Critical Chengdu Rui Core Technology Co Ltd
Priority to CN201810412065.5A priority Critical patent/CN108982982A/en
Publication of CN108982982A publication Critical patent/CN108982982A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/22Measuring piezoelectric properties
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)

Abstract

The present invention relates to piezoelectric material detection technique field more particularly to a kind of methods of probe and test piezoelectric modulus.Probe of the invention includes the piezo chips and detection probe of insulation connection, the piezo chips include two opposite surfaces, one of surface earthing can detect the voltage signal generated respectively on the ungrounded surface of piezoelectricity membrane sample and the ungrounded surface of piezo chips when the detection probe touches piezoelectricity membrane sample.Probe of the invention and test piezoelectric modulus method can a surface based on piezoelectric film go to carry out the detection of piezoelectric modulus, without piezoelectric film is destroyed, operate fairly simple, detection efficiency is high.

Description

The method of probe and test piezoelectric modulus
[technical field]
The present invention relates to piezoelectric material detection technique field more particularly to a kind of methods of probe and test piezoelectric modulus.
[background technique]
Piezoelectric material is to be under pressure when acting on the crystalline material of voltage occur in both ends surface parts, and piezoelectric material is most heavy The material parameter wanted is exactly piezoelectric modulus D33
The mode of the piezoelectric modulus of existing measurement piezoelectric material is all by by piezoelectric film frustillatum, to small bulk The upper and lower surface of piezoelectric film apply certain power, piezoelectricity is calculated by voltage that test piezoelectric film upper and lower surface generates The piezoelectric modulus D of film33.Therefore, it requires to destroy piezoelectricity membrane sample when detecting every time, and has to the upper following table in piezoelectric film Face simultaneously applied force, operating process is comparatively laborious, can only individually position is gone successively to detect one by one, piezoelectricity can not be directed to simultaneously Multiple positions of film are detected, and detection efficiency is low, and testing result is not also very accurate.
[summary of the invention]
In view of the above-mentioned problems, the present invention provides the method for a kind of probe and test piezoelectric modulus.
The scheme that the present invention solves technical problem is to provide a kind of probe, is used to test the piezoelectricity system of piezoelectricity membrane sample Number, one surface earthing of piezoelectricity membrane sample, the probe include the piezo chips and detection probe of connection, the piezo chips Including two opposite surfaces, one of surface earthing, the detection probe touches detectable pressure when piezoelectric film sample surfaces The voltage signal generated respectively on the ungrounded surface of electrolemma sample and the ungrounded surface of piezo chips.
Preferably, the probe further comprises reference signal line and sample signal line, the sample signal line and piezoelectricity The ungrounded surface of membrane sample connects, and the ungrounded surface of the reference signal line and piezo chips connects, the sample signal Line and reference signal line are also used to connect with external data processing device.
Preferably, the probe further includes insulating layer, and the insulating layer is wrapped in reference signal line, piezo chips, detection The periphery of probe and sample signal line, and connected between piezo chips and detection probe by insulating layer.
Preferably, the probe further comprises metal shell, and the metal shell is hollow structure, the piezoelectricity core Piece, reference signal line, detection probe, insulating layer and sample signal line are at least partly housed in the hollow structure, and described exhausted Tight between edge layer and metal shell, the metal shell with gearshift for connecting, a table of the piezo chips Face is grounded by metal shell.
Preferably, surface and piezo chips of the piezoelectricity membrane sample far from detection probe connect close to the surface of detection probe Ground setting, the sample signal line are connect with detection probe, the table of the reference signal line and piezo chips far from detection probe Face connection.
Preferably, the detection probe ground connection is arranged and connect with piezo chips close to the surface of detection probe, the sample Product signal wire is connect with piezoelectricity membrane sample far from the surface of detection probe, and the reference signal line and piezo chips are visited far from detection The surface of needle connects.
Preferably, detection probe one end insulation, the opposite other end is conductive, one end of detection probe insulation and piezoelectricity Chip is connected close to the surface of detection probe, and one end of detection probe conduction is arranged close to piezoelectricity membrane sample.
Preferably, the probe further comprises elasticity transition part, and elasticity transition part one end and piezo chips are close The surface of detection probe connects, and the other end is connect with detection probe, and the elasticity transition part is isolation material.
Preferably, the probe further comprises connector, elastic component and fixing piece, and the fixing piece is used to fill with displacement Connection is set, described elastic component one end is connect with fixing piece, and one end is connect with connector, and the connector is connect with metal shell.
The present invention also provides a kind of method for testing piezoelectric modulus, the method for the test piezoelectric modulus includes following step It is rapid:
Detection probe and piezo chips are provided, wherein piezo chips have opposite two surfaces, and piezo chips and detection are visited Needle connection and piezo chips wherein surface earthing setting;
Piezoelectricity membrane sample to be detected is provided and makes a surface earthing of piezoelectricity membrane sample;
By detection probe, to piezoelectricity membrane sample, wherein a surface carries out contact measurement and obtains this piezoelectricity membrane sample is non-to connect The reference voltage signal that the ungrounded surface of voltage signal and piezo chips that ground surface generates generates;And
The piezoelectric modulus of piezoelectricity membrane sample is obtained by two voltage signal.
Compared with prior art, probe of the invention includes the piezo chips and detection probe of insulation connection, the piezoelectricity Chip includes two opposite surfaces, and one of surface earthing, the detection probe is detectable when touching piezoelectricity membrane sample to press The voltage signal generated respectively on the ungrounded surface of electrolemma sample and the ungrounded surface of piezo chips.Probe of the invention can Go the detection for carrying out piezoelectric modulus, without piezoelectric film is destroyed, operate fairly simple, detection effect with a surface based on piezoelectric film Rate is high.
Compared with prior art, the method for test piezoelectric modulus of the invention equally has the above advantages.
[Detailed description of the invention]
Fig. 1 is the structural schematic diagram of the device of the test piezoelectric modulus of first embodiment of the invention.
Fig. 2 is the structural schematic diagram of the probe in Fig. 1 of first embodiment of the invention.
Fig. 3 is the schematic cross-sectional view of detector in Fig. 2 of first embodiment of the invention.
Fig. 4 is voltage change when detector touches piezoelectric film in first embodiment of the invention on piezoelectric film and piezo chips Schematic diagram.
Fig. 5 is the schematic diagram that the detector in Fig. 2 of first embodiment of the invention detects piezoelectricity membrane sample.
Fig. 6 is a kind of deformation that the detector in Fig. 2 of first embodiment of the invention detects piezoelectricity membrane sample Schematic diagram.
Fig. 7 is the execution process signal that the control program of device of piezoelectric modulus is tested in the first embodiment of the present invention Figure.
Fig. 8 is the flow diagram that the method for piezoelectric modulus is tested in the third embodiment of the present invention.
Fig. 9 is in the third embodiment of the present invention using the test piezoelectricity system of the test piezoelectric modulus device of first embodiment The flow diagram of counting method.
Description of symbols: 10, the device of piezoelectric modulus is tested;11, gearshift;13, it pops one's head in;15, sample stage;17, Workbench;20, piezoelectricity membrane sample;21, piezoelectric film;22, substrate;131, detector;133, connector;135, fixing piece;137, Elastic component;1311, metal shell;1312, reference signal line;1313, piezo chips;1315, insulating layer;1317, detection probe; 1319, sample signal line.
[specific embodiment]
In order to make the purpose of the present invention, technical solution and advantage are more clearly understood, below in conjunction with attached drawing and embodiment, The present invention will be described in further detail.It should be appreciated that described herein, specific examples are only used to explain the present invention, and It is not used in the restriction present invention.
Referring to FIG. 1, first embodiment of the invention provides a kind of device 10 for testing piezoelectric modulus, it is used to test piezoelectricity The piezoelectric modulus of material, particularly for testing the piezoelectric modulus of piezoelectric film, the device 10 of the test piezoelectric modulus includes work Platform 17, sample stage 15, gearshift 11 and probe 13, the sample stage 15 is for carrying piezoelectricity membrane sample 20 to be detected and connecing Ground setting, institute's displacement apparatus 11 and sample stage 15 are arranged on workbench 17, and institute's displacement apparatus 11 is connect with probe 13 And probe 13 can be driven mobile relative to sample stage 15, the probe 13 is connect with external data processing device (not shown), when Probe 13 can collect voltage signal and the transmission on piezoelectric film ungrounded surface when touching the piezoelectric film on piezoelectricity membrane sample 20 To external data processing device.Institute's displacement apparatus 11 can at least drive probe 13 in the direction perpendicular to piezoelectricity membrane sample 20 Upper movement, institute's displacement apparatus 11 are preferably three-dimensional moving device, it can probe 13 is driven to carry out on three dimension directions It is mobile, convenient for the test scope of probe 13 is adjusted flexibly.The probe 13 can be under the drive of gearshift 11 towards close to piezoelectricity The direction of membrane sample 20 is mobile, and when probe 13 touches the piezoelectric film on piezoelectricity membrane sample 20, probe 13 can detecte pressure The voltage signal of the ungrounded surface generation of electrolemma is simultaneously transmitted to external data processing device, and external data processing device passes through into one The piezoelectric modulus of the available piezoelectric film of the Data Analysis Services of step.(nouns of locality are waited only up and down mentioned in the present invention It is limited to the relative position in given view, rather than absolute position, it will be understood that given view planar carries out 180 ° of rotations Afterwards, word "lower" in position can replace with position word "upper".) it is appreciated that being used as a kind of deformation, the sample stage 15 can save Slightly, piezoelectricity membrane sample 20 is directly placed on the workbench 17 of ground connection setting.It is appreciated that the external data processing dress It sets and can be oscillograph, computer or other data acquisition equipments.
Referring to FIG. 2, the probe 13 includes detector 131, connector 133, fixing piece 135 and elastic component 137, it is described Fixing piece 135 with gearshift 11 for being fixedly connected, and described 137 one end of elastic component is connect with fixing piece 135, and opposite is another End is connect with connector 133, and the connector 133 is connect with detector 131, and the detector 131 is also used to and external data Processing unit connection, the detector 131 are used to touch piezoelectricity membrane sample 20 close to the surface of probe 13 and obtain piezoelectric film sample The voltage signal that generates on the ungrounded surface of the piezoelectric film of product 20 and it is transmitted to external data processing device.It is appreciated that institute Stating elastic component 137 is spring, and the connector 133 is linear bearing.
Please also refer to Fig. 2 and Fig. 3, the detector 131 includes metal shell 1311, reference signal line 1312, piezoelectricity Chip 1313, insulating layer 1315, detection probe 1317 and sample signal line 1319.The metal shell 1311 and connector 133 One end far from elastic component 137 connects, and the metal shell 1311 is a hollow structure and ground connection setting, the piezo chips 1313, insulating layer 1315 is whole is housed in the hollow structure, the reference signal line 1312, detection probe 1317 and sample letter Number 1319 partial receipt of line is in the hollow structure.Insulating layer 1315 is located in hollow structure, and be filled in piezo chips 1313, Reference signal line 1312, detection probe 1317 and sample signal line 1319 are located at the periphery in 1311 hollow structure of metal shell, Make detection probe 1317, reference signal line 1312, sample signal line 1319, piezo chips 1313 respectively and in metal shell 1311 Wall insulation, and separated between piezo chips 1313 and detection probe 1317 by insulating layer 1315.In addition, insulating layer 1315 and gold Belong to and gap is not present between 1311 inner wall of shell, both prevents from occurring in the detection process occurring that detection is caused to be tied with respect to shaking Fruit is not accurate.The piezo chips 1313 have two opposite surfaces, and a surface is connect with reference signal line 1312, another A surface is connected to metal shell 1311 to be grounded by the metal shell 1311.Specifically, the reference signal line 1312 one end are connect with piezo chips 1313 far from the surface of detection probe 1317, and the other end is used for and external data processing device It connects, the reference generated on available surface of the piezo chips 1313 far from detection probe 1317 of the reference signal line 1312 Voltage signal size is simultaneously transmitted to external data processing device.Described 1319 one end of sample signal line and detection probe 1317 connect It connects, the other end is used to connect with external data processing device, the available piezoelectricity membrane sample 20 of the sample signal line 1319 The sample voltage signal magnitude of ungrounded surface generation is simultaneously transmitted to external data processing device.
It is appreciated that the detection probe 1317 is made of conductive material.It is appreciated that the material of the metal shell 1311 Of fine quality to be selected as stainless steel, the material of the insulating layer 1315 is preferably polystyrene.In addition, the insulating layer 1315 can save Slightly, as long as ensuring to insulate between piezo chips 1313 and detection probe 1317, and piezo chips 1313, detection probe 1317 and gold Belong to 1311 inner wall insulation of shell, for example is located in metal shell 1311 separately through positioning device.It is appreciated that described Piezo chips 1313 can be benchmark piezoelectric film, and such as benchmark pvdf membrane, the benchmark piezoelectric film i.e. its piezoelectric modulus meets application Demand, and its thickness and piezoelectric modulus are it is known that the amount of charge and power that the benchmark piezoelectric film after being under pressure, generates Size is directly proportional.It is appreciated that the metal shell 1311 can be omitted, table of the piezo chips 1313 close to detection probe 1317 Face is connect by a signal wire independent grounding, the insulating layer 1315 with connector 133, and insulating layer 1315 is equivalent to one at this time Insulation crust, piezo chips 1313 are whole to be housed in insulating layer 1315, the detection probe 1317,1312 and of reference signal line 1319 partial receipt of sample signal line is in insulating layer 1315.
When work, when detector 131 removes the piezoelectric film on touching piezoelectricity membrane sample 20, detection probe 1317 can be to piezoelectricity Film applies a power, and since the piezoelectric effect of piezoelectric film itself can generate an electric field on piezoelectric film, and piezoelectric film is close The surface earthing of sample stage 15 is arranged, therefore the surface that piezoelectric film is in contact with detection probe 1317 can generate sample voltage letter Number, the sample signal line 1319 can detect the sample voltage signal and be transmitted to external data processing device.In addition, due to The effect of active force and reaction force, detection probe 1317 will receive the reaction force of piezoelectricity membrane sample 20, and pass through insulating layer 1315 are applied to piezo chips 1313, since the piezoelectric effect of piezo chips 1313 can generate an electricity in piezo chips 1313 , in addition, the piezo chips 1313 are arranged close to the surface earthing of detection probe 1317, so can be remote in piezo chips 1313 A reference voltage signal is generated on surface from detection probe 1317, the reference signal line 1312 can detecte the reference Voltage signal is simultaneously transmitted to external data processing device.External data processing device by collected reference voltage signal and The piezoelectric modulus of the piezoelectric film on piezoelectricity membrane sample 20 can be obtained by further Data Analysis Services for sample voltage signal.
Referring to FIG. 4, it is appreciated that the device 10 of test piezoelectric modulus of the invention is in the reality for carrying out piezoelectricity membrane sample 20 When border measures, it will usually take the standard sample of a known piezoelectric modulus as reference, next with specific calculating process To be illustrated explanation to the Data Analysis Services of external data processing device.
The calculation formula of piezoelectric modulus are as follows: piezoelectric modulus D33=k*V1/V0, wherein V1Represent the generation of piezoelectricity membrane sample 20 Voltage signal size, V0The voltage signal size of the generation of piezo chips 1313 is represented, k represents a proportionality coefficient.To be measured Piezoelectricity membrane sample 20 detected before, first to piezoelectric modulus D known to one33Standard piezoelectric membrane sample detected, thus Obtain coefficient k, k=D33 marks* V0 mark/V1 mark, wherein V0 markAnd V1 markIt can be obtained by detection, D33 marksBelong to known parameters.
Piezoelectricity membrane sample 20 to be measured is detected to obtain V again1 sampleAnd V0 sample, V1 sampleRepresent piezoelectricity membrane sample 20 to be measured On 21 surface of piezoelectric film voltage signal, V0 sampleWhen representative detects piezoelectric film sample 20 to be measured in piezo chips 1313 The voltage signal of generation obtains the piezoelectric modulus D of the piezoelectric film on piezoelectricity membrane sample 2033=(D33 marks* V0 mark* V1 sample)/(V1 mark* V0 sample).It is appreciated that the coefficient k is known parameter after a debugging of standard piezoelectric membrane sample 20, that is, detecting When the piezoelectric modulus of piezoelectricity membrane sample 20 to be measured, standard piezoelectric membrane sample 20 is not needed to reuse as reference, Ke Yizhi It connects and piezoelectricity membrane sample 20 to be measured is detected.
It is appreciated that being used as a kind of deformation, the detector 131 be can be used alone, i.e., the described fixing piece 135, elasticity Part 137 and connector 133 can be omitted.When detection probe 1317 removes touching piezoelectricity membrane sample 20, based on active force and anti-work Principle firmly, the piezoelectricity membrane sample 20 can also be conducted to 1,317 1 reaction forces of detection probe and by insulating layer 1315 To piezo chips 1313, to generate a voltage signal respectively in piezo chips 1313 and piezoelectric film 21 simultaneously, reference is believed Number line 1312 and sample signal line 1319 detect piezo chips 1313 and voltage signal on piezoelectric film 21 respectively and are transmitted to External data processing device.
In addition, it is to be appreciated that deforming as another kind, the detection probe 1317 is with piezo chips 1313 close to detection The surface of probe 1317 is connected by an elasticity transition part (not shown), and the elasticity transition part is isolation material, the piezoelectricity The reaction force that membrane sample 20 is applied to detection probe 1317 can directly be conducted by elasticity transition part to piezo chips 1313 Close to the surface of detection probe 1317.It is further appreciated that directly will test probe 1317 be fabricated to one end insulate one end conduction, will One end that detection probe 1317 insulate is connect with piezo chips 1313 close to the surface of detection probe 1317, and detection probe 1317 is led Touching piezoelectricity membrane sample 20 is removed in one end of electricity.
As long as being appreciated that detection probe 1317 is connected with piezo chips 1313, and piezoelectricity membrane sample 20 and piezoelectricity core Piece 1313 is uniform to flank ground, and the single-contact formula pressing detection of the invention to piezoelectricity membrane sample 20 can be realized.Company herein Connecing, which can be, is directly connected to, and is also possible to be indirectly connected with, as long as detection probe 1317 is detected with the contact of piezoelectricity membrane sample 20 When active force caused by reaction force can exert a force to piezo chips 1313, can be detected.
Please also refer to Fig. 2 and Fig. 5, piezoelectricity membrane sample 20 of the invention refers to the PVDF being formed in situ in substrate 22 (polyvinylidene fluoride, polyvinylidene fluoride) film 21, the pvdf membrane 21 are piezoelectric film 21, i.e. piezoelectric film Sample 20 includes substrate 22 and pvdf membrane 21 simultaneously.It is appreciated that described be formed in situ refers to passing through of macromolecule membrane Learn vapor deposition, physical vapour deposition (PVD), the conventional approaches such as coating are formed in substrate surface, basic thickness can maintain 9 μm with Under, therefore the macromolecule membrane of very thin thickness can be formed, greatly improve resolution ratio.And for many semiconductor precision devices Part, substrate 22 may be directly wafer etc., it may be considered that piezoelectricity membrane sample 20 is directly with the side of this substrate 22 and piezoelectric film 21 Formula measures.It is further appreciated that the piezoelectricity membrane sample 20 is also possible to simple piezoelectric film, it is such as existing currently on the market The piezoelectric polymer film product of sale is centainly answered in general, the piezoelectric polymer film of this finished product needs first to be drawn high to have Power is then again by being bonded in substrate, and the macromolecule membrane thickness that such method is formed is at 30 μm or more.
When specific test, when piezoelectricity membrane sample 20 is placed on sample stage 15, substrate 22 is arranged close to sample stage 15, by Need to carry out electric signal conduction in substrate 22, the substrate 22 must be conductive material, preferably metal material.The substrate 22 is logical The ground connection of sample stage 15 is crossed, when the detection probe 1317 removes touching pressing piezoelectric film 21, can be visited in piezoelectric film 21 close to detection The surface of surface and piezo chips 1313 far from detection probe 1317 of needle 1317 all generates a voltage signal, wherein detection is visited Needle 1317 connects with piezo chips 1313 is isolated between the earth's surface by insulating layer 1315.Sample signal line 1319 can pass through detection Probe 1317 collects the sample voltage signal that piezoelectric film 21 generates on the surface of detection probe 1317 and is transmitted to outside Data processing equipment, reference signal line 1312, which can collect, to be generated on surface of the piezo chips 1313 far from detection probe 1317 Reference voltage signal is simultaneously transmitted to external data processing device, and external data processing device compares two voltage signals and passes through number The piezoelectric modulus of piezoelectric film 21 to be measured is obtained according to processing.The device 10 of test piezoelectric modulus of the invention can be based on piezoelectric film The surface that sample 20 is provided with piezoelectric film 21 is detected, and is realized single side detection, is not needed piezoelectric film 21 from substrate It is taken off on 22 to being destroyed to piezoelectricity membrane sample 20, and existing test platform is required piezoelectric film 21 from substrate 22 On take off after again while being detected on two surfaces of piezoelectric film 21 to obtain the piezoelectric modulus of piezoelectric film 21, it is of the invention The device 10 for testing piezoelectric modulus has easy to use, can not destroy piezoelectricity membrane sample especially such as fine chip sample, with And the advantage that detection efficiency is high.
In addition, it is to be appreciated that the device 10 of test piezoelectric modulus of the invention is equally applicable to individual piezoelectric film 21 are detected.Piezoelectric film 21 is placed on sample stage 15, the ground connection setting of sample stage 15, when detector 131 removes touching piezoelectricity When film 21, a sample voltage letter can be generated respectively on the surface of detector 131 and piezo chips 1313 in piezoelectric film 21 Number and reference voltage signal, reference signal line 1312 detects the reference voltage signal and is transmitted to external data processing device, Sample signal line 1319 detects the sample voltage signal and is transmitted to external data processing device, and external data processing device passes through Crossing further Data Analysis Services can be obtained the piezoelectric modulus of piezoelectric film 21.
Referring to FIG. 6, the sample signal line 1319 is also connect with sample stage 15 or substrate 22 as a kind of deformation, this When sample stage 15 and substrate 22 it is earth-free, and will test the setting of the ground connection of probe 1317 and detection probe 1317 and piezo chips 1313 It is connected close to the surface of sample stage 15.When the detection probe 1317 goes touching piezoelectric film 21 close to the surface of detection probe 1317 When, detection probe 1317 is applied to 21 1 active forces of piezoelectric film, and piezoelectric film 21 can generate one due to the piezoelectric effect of itself Electric field is arranged since detection probe 1317 is grounded, so the surface potential that piezoelectric film 21 is contacted with detection probe 1317 is zero, because This can generate a voltage signal on surface of the piezoelectric film 21 far from detection probe 1317 namely produce close to 15 surface of sample stage Raw sample voltage signal, the sample signal line 1319 are transmitted to external data processing dress after detecting the sample voltage signal It sets.In addition, piezoelectric film 21 can give detection probe 1,317 1 reaction forces, thus to piezo chips 1313 close to detection probe 1317 surface applies a power, can equally generate an electric field in piezo chips 1313, due to piezo chips 1313 and detection The surface earthing setting that probe 1317 contacts, therefore one can be generated on surface of the piezo chips 1313 far from detection probe 1317 A reference voltage signal, the reference signal line 1312 can detecte the reference voltage signal and be transmitted to external data processing Device.The piezoelectric modulus of same available piezoelectric film 21 is analyzed by the comparison of external data processing device.
In addition, in other embodiments of the invention, the device 10 of the test piezoelectric modulus still further comprises control Device (not shown), the controller is connect with gearshift 11 and the running of controllable gearshift 11.It is appreciated that the control Operation interface (not shown) is provided on device processed, user can go the control journey of setting gearshift 11 by the operation interface Sequence, to set movement travel and the track of gearshift 11.It needs to detect number for example, user sets on the controller After detection range, controller, that is, command displacement device 11 is scanned formula to piezoelectricity membrane sample 20 according to the program of setting and examines It surveys, a secondary program can be executed, point by point scanning test is carried out to piezoelectric film 21, test result is more accurate, and testing efficiency significantly mentions It rises.Next exemplary illustrated to do with control program shown in fig. 7, it is not limited here.A certain position is arranged For origin, space three-dimensional (XYZ) coordinate system is established with origin, as shown in fig. 7, when starting to execute detection operation, controller control Gearshift 11 processed drives probe 13 to be moved to origin, then controls the sweep starting point that probe 13 is moved to the direction XY, then controls Probe 13 is moved to the initial point of Z-direction up stroke, then controls probe 13 and be moved at Z-direction maximum position.It is appreciated that visiting First 13 probes 13 when being moved at Z-direction maximum position can be touched with certain speed and piezoelectric film 21.Controller is controlled again The drive of gearshift 11 probe 13 processed is moved to the initial point of Z-direction up stroke, so as to complete the detection debugging stage.Then exist Setting detection number, spacing distance and detection range, the detection range refer on the direction XY in the operation interface of controller Detection range.Subsequent controller command displacement device 11 drive probe 13 according to preset interval distance carry out in X-direction by Spot scan detects, and after the detection in X-direction is completed, controller control probe 13 is moved to origin, then executes the point-by-point of Y-direction Scanning Detction, entire detection process terminates after the completion of the Scanning Detction in Y-direction.It is appreciated that the direction XY is It is parallel to the reference axis on 21 surface of piezoelectric film, Z-direction is perpendicular to the reference axis on 21 surface of piezoelectric film.
It is appreciated that gearshift 11 can also drive probe 13 to carry out sweeping in X-direction point by point according to preset interval distance Detection is retouched, a line is scanned through and moves certain spacing distance in the Y direction again later, then executes the point by point scanning inspection in X-direction It surveys, until completing whole scannings in detection range.It is further appreciated that specific detection stroke can by the controller come It is set, it is numerous to list herein.
It is appreciated that being used as a kind of deformation, the device 10 of the test piezoelectric modulus may include multiple probes 13, work as survey It, can be in the running of a Z-direction when device 10 of pressure testing electrostrictive coefficient is scanned formula test to piezoelectricity membrane sample 20 Piezoelectricity membrane sample 20 is completed to detect, or progressive scan detection can be carried out to piezoelectricity membrane sample 20, relative to single probe 13 point by point scanning formula detection greatly improves detection efficiency.It is deformed as another kind, the probe 13 includes that multiple detections are visited Needle 1317, multiple detection probes 1317 are arranged in array or linearly arrange, when the device 10 of test piezoelectric modulus is to piezoelectric film When sample 20 is scanned formula test, piezoelectricity membrane sample 20 can be completed to detect in the running of a Z-direction, or Piezoelectricity membrane sample 20 can be detected line by line, the point by point scanning formula detection relative to single detection probe 1317 greatly promotes Detection efficiency.
Second embodiment of the invention also provides a kind of system for testing piezoelectric modulus comprising survey described in first embodiment The device and data processing equipment (not shown) of pressure testing electrostrictive coefficient, the probe 13 connect with data processing equipment signal, pop one's head in The voltage signal on the ungrounded surface on the ungrounded surface and piezo chips of 13 acquisition piezoelectricity membrane samples simultaneously sends data processing to Device, data processing equipment receive and based on probe 13 collected piezoelectricity membrane samples ungrounded surface and piezo chips it is non- The voltage signal of earthed surface is analyzed to obtain the piezoelectric modulus of piezoelectricity membrane sample.Signal connection can be wired connection or Person is wirelessly connected, such as passes through Bluetooth transmission, wifi transmission or signal wire transmission etc..
Referring to FIG. 8, third embodiment of the invention also provides a kind of method for testing piezoelectric modulus, the test piezoelectricity system Several method the following steps are included:
Detection probe and piezo chips are provided, wherein piezo chips have opposite two surfaces, and piezo chips and detection are visited Needle connection and piezo chips wherein surface earthing setting;
Piezoelectricity membrane sample to be detected is provided and makes a surface earthing of piezoelectricity membrane sample;
By detection probe, to piezoelectricity membrane sample, wherein progress contact pressing detection in a surface obtains the piezoelectricity membrane sample The reference voltage signal that the ungrounded surface of voltage signal and piezo chips that ungrounded surface generates generates;
The piezoelectric modulus of piezoelectricity membrane sample is obtained by two voltage signal.
It is appreciated that the above-mentioned detection to piezoelectricity membrane sample can be and directly detect to piezoelectric film itself merely, It can be and the piezoelectric film product being formed in conductive substrates is detected together, as long as meeting makes one surface earthing of piezoelectric film i.e. It can.When piezoelectricity membrane sample is simple piezoelectric film, pressing detection can be carried out based on any surface of piezoelectric film;Work as piezoelectric film Sample be comprising conductive substrates and be formed in conductive substrates piezoelectric film when, be preferably based on pressing have piezoelectric film surface go It is detected.
It is appreciated that when surface and piezo chips of the piezoelectricity membrane sample far from detection probe connect close to the surface of detection probe When ground, detection probe is conductive material, can connect or pass through insulation between detection probe and piezo chips by insulating layer Elasticity transition part connection with realize between the two insulation connection or detection probe one end insulation, the opposite other end Conduction, and one end of detection probe conduction is for touching piezoelectricity membrane sample close to the surface of detection probe, one end of insulation with Piezo chips connect, and the voltage signal generated on piezoelectricity membrane sample is then led to by piezoelectricity membrane sample close to the surface of detection probe It crosses detection probe to pass, the voltage signal generated in piezo chips is transmitted by piezo chips far from the surface of detection probe It goes out.When the detection probe is ground connection setting, described detection probe one end is connect with piezo chips, and opposite one end is gone to touch The voltage signal that bruising electrolemma sample generates on the surface of detection probe, piezoelectricity membrane sample is by piezoelectricity membrane sample far from inspection The surface of probing needle passes, and the voltage signal generated in piezo chips is passed by piezo chips far from the surface of detection probe It passs away.
In the third embodiment of the present invention, the calculation formula of piezoelectric modulus are as follows: piezoelectric modulus D33=k*V1/V0, wherein V1Represent the voltage signal size on 21 surface of piezoelectric film, V0The voltage signal size of the generation of piezo chips 1313 is represented, k represents one A proportionality coefficient.Due to using standard piezoelectric membrane sample, so D33 marksFor known parameters, V0 markAnd V1 markThrough the invention The test of device 10 of the test piezoelectric modulus of one embodiment obtains.It is, therefore, to be understood that the purpose of the step S1 and S2 be for Obtain proportionality coefficient k=D33 marks* V0 mark/V1 mark
Referring to FIG. 9, specifically, using the device 10 of test piezoelectric modulus as described above, the test piezoelectric modulus Device 10 include detection probe 1317, reference signal line 1312, piezo chips 1313 and sample signal line 1319, piezo chips There are two opposite surface, one of surface earthing, another surfaces to connect with reference signal line for 1313 tools, the sample letter Number line 1319 is by detection probe 1317 or directly connect with the ungrounded surface of piezoelectric film 21, when detection probe 1317 goes to touch A voltage letter can be generated when piezoelectric film 21 is close to the surface of detection probe 1317 on piezoelectric film 21 and piezo chips 1313 Number.
It include following step to the method for piezoelectric film sample test piezoelectric modulus using the device 10 of above-mentioned test piezoelectric modulus It is rapid:
Step S1: standard piezoelectric membrane sample is placed;
Step S2: standard piezoelectric membrane sample is detected;
Step S3: piezoelectricity membrane sample to be measured is placed;
Step S4: the detection range of detection probe is set according to the size of piezoelectricity membrane sample to be measured;And
Step S5: traveling probe is scanned formula detection so that exporting piezoelectricity to be measured simultaneously to piezoelectricity membrane sample to be measured The voltage signal on membrane sample surface and piezo chips surface is to obtain the piezoelectric modulus of piezoelectricity membrane sample to be measured.
It is appreciated that the step S1 and step S2 can be omitted, the coefficient k passes through a standard piezoelectric membrane sample tune It is then known parameter after examination, i.e., when detecting the piezoelectric modulus of piezoelectricity membrane sample to be measured, does not need to reuse standard pressure Electrolemma sample can directly detect piezoelectricity membrane sample to be measured as reference.
It is appreciated that in the step S4, multiple test points and/or more can be set in the areal extent of piezoelectric film A detection position, so that it is guaranteed that testing result is more accurate, detection efficiency is higher.
Single-point detection is carried out to piezoelectricity membrane sample it is appreciated that detection probe can also be moved in the step S5, together The piezoelectric modulus of the available piezoelectricity membrane sample of sample.In addition, it is to be appreciated that after being scanned formula detection in the step S5 A series of testing result is obtained, can be calculated based on existing K mean cluster algorithm, weighted mean method or other algorithms The average value of multiple testing results is obtained, so that testing result is more accurate.
Compared with prior art, probe of the invention includes the piezo chips and detection probe of insulation connection, the piezoelectricity Chip includes two opposite surfaces, and one of surface earthing, the detection probe is detectable when touching piezoelectricity membrane sample to press The voltage signal generated respectively on the ungrounded surface of electrolemma sample and the ungrounded surface of piezo chips.Probe of the invention can Go the detection for carrying out piezoelectric modulus, without piezoelectric film is destroyed, operate fairly simple, detection effect with a surface based on piezoelectric film Rate is high.
Compared with prior art, the method for test piezoelectric modulus of the invention equally has the above advantages.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in original of the invention Made any modification within then, equivalent replacement and improvement etc. should all be comprising within protection scope of the present invention.

Claims (10)

1. a kind of probe is used to test the piezoelectric modulus of piezoelectricity membrane sample, one surface earthing of piezoelectricity membrane sample, feature Be: the probe includes the piezo chips and detection probe of connection, and the piezo chips include two opposite surfaces, wherein One surface earthing, the detection probe touch the ungrounded surface of detectable piezoelectricity membrane sample and pressure when piezoelectric film sample surfaces The voltage signal generated respectively on the ungrounded surface of electrical chip.
2. probe as described in claim 1, it is characterised in that: the probe further comprises reference signal line and sample signal Line, the sample signal line are connect with the ungrounded surface of piezoelectricity membrane sample, and the reference signal line and the non-of piezo chips connect Ground surface connection, the sample signal line and reference signal line are also used to connect with external data processing device.
3. probe as claimed in claim 2, it is characterised in that: the probe further includes insulating layer, and the insulating layer is wrapped in The periphery of reference signal line, piezo chips, detection probe and sample signal line, and by exhausted between piezo chips and detection probe Edge layer connection.
4. probe as claimed in claim 3, it is characterised in that: the probe further comprises metal shell, outside the metal Shell is hollow structure, and the piezo chips, reference signal line, detection probe, insulating layer and sample signal line at least partly accommodate In the hollow structure, and tight between the insulating layer and metal shell, the metal shell are used to connect with gearshift It connects, a surface of the piezo chips is grounded by metal shell.
5. probe as claimed in claim 2, it is characterised in that: surface and piezoelectricity of the piezoelectricity membrane sample far from detection probe Chip is arranged close to the surface earthing of detection probe, and the sample signal line connect with detection probe, the reference signal line and Piezo chips are connected far from the surface of detection probe.
6. probe as claimed in claim 2, it is characterised in that: the detection probe ground connection is arranged and with piezo chips close to inspection The surface of probing needle connects, and the sample signal line is connect with piezoelectricity membrane sample far from the surface of detection probe, the reference letter Number line and piezo chips are connected far from the surface of detection probe.
7. probe as described in claim 1, it is characterised in that: detection probe one end insulation, the opposite other end is conductive, One end of detection probe insulation and piezo chips are connected close to the surface of detection probe, and one end of detection probe conduction is close to piezoelectricity Membrane sample setting.
8. probe as described in claim 1, it is characterised in that: the probe further comprises elasticity transition part, the elasticity Transition piece one end and piezo chips are connected close to the surface of detection probe, and the other end is connect with detection probe, the elasticity transition Part is isolation material.
9. probe as claimed in claim 4, it is characterised in that: the probe further comprises connector, elastic component and fixation Part, the fixing piece with gearshift for connecting, and described elastic component one end is connect with fixing piece, and one end is connect with connector, The connector is connect with metal shell.
10. it is a kind of test piezoelectric modulus method, it is characterised in that: it is described test piezoelectric modulus method the following steps are included:
Detection probe and piezo chips are provided, wherein piezo chips have opposite two surfaces, and piezo chips and detection probe connect Connect and piezo chips wherein a surface earthing be arranged;
Piezoelectricity membrane sample to be detected is provided and makes a surface earthing of piezoelectricity membrane sample;
By detection probe, to piezoelectricity membrane sample, wherein progress contact measurement in a surface obtains the ungrounded table of piezoelectricity membrane sample The reference voltage signal that the ungrounded surface of voltage signal and piezo chips that face generates generates;And
The piezoelectric modulus of piezoelectricity membrane sample is obtained by two voltage signal.
CN201810412065.5A 2018-05-02 2018-05-02 The method of probe and test piezoelectric modulus Pending CN108982982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810412065.5A CN108982982A (en) 2018-05-02 2018-05-02 The method of probe and test piezoelectric modulus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810412065.5A CN108982982A (en) 2018-05-02 2018-05-02 The method of probe and test piezoelectric modulus

Publications (1)

Publication Number Publication Date
CN108982982A true CN108982982A (en) 2018-12-11

Family

ID=64542397

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810412065.5A Pending CN108982982A (en) 2018-05-02 2018-05-02 The method of probe and test piezoelectric modulus

Country Status (1)

Country Link
CN (1) CN108982982A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112986704A (en) * 2021-02-24 2021-06-18 电子科技大学 Longitudinal piezoelectric coefficient measuring method based on atomic force microscope
CN113049889A (en) * 2021-02-01 2021-06-29 佛山市卓膜科技有限公司 Detection method and measurement device for piezoelectric coefficient of piezoelectric film
RU2753970C1 (en) * 2020-12-08 2021-08-24 федеральное государственное бюджетное образовательное учреждение высшего образования "Казанский национальный исследовательский технический университет им. А.Н.Туполева - КАИ" Device for measuring piezoelectric effect voltage in polymers
CN114325153A (en) * 2021-11-15 2022-04-12 北京无线电计量测试研究所 Current injection device and shell current conduction sensitivity testing device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2308072Y (en) * 1997-12-19 1999-02-17 中国科学院声学研究所 Instrument for measuring longitudinal piezoelectric strain constant by quasi-static method
CN1220399A (en) * 1997-12-18 1999-06-23 大宇电子株式会社 Method for measuring piezoelectric constant of thin film shaped piezoelectric material
CN1979184A (en) * 2005-11-30 2007-06-13 中国科学院声学研究所 Transverse piezoelectric strain constant measuring method by piezoelectric material quasistatic method and system thereof
CN101074975A (en) * 2007-06-25 2007-11-21 武汉科技学院 Method for measuring thin-film piezoelectric coefficient d33
CN101430352A (en) * 2007-09-24 2009-05-13 中国科学院声学研究所 Measuring system and method for tangential piezoelectric strain constant of piezoelectric material by quasi-static method
CN104215840A (en) * 2014-09-01 2014-12-17 东华大学 Device and method for testing piezoelectric property of electrostatic spinning PVDF (polyvinylidene fluoride) piezoelectric fiber membrane
CN105759130A (en) * 2014-12-17 2016-07-13 北京纳米能源与系统研究所 Measurement device and measurement method for piezoelectric coefficient d33 of nanowire

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1220399A (en) * 1997-12-18 1999-06-23 大宇电子株式会社 Method for measuring piezoelectric constant of thin film shaped piezoelectric material
CN2308072Y (en) * 1997-12-19 1999-02-17 中国科学院声学研究所 Instrument for measuring longitudinal piezoelectric strain constant by quasi-static method
CN1979184A (en) * 2005-11-30 2007-06-13 中国科学院声学研究所 Transverse piezoelectric strain constant measuring method by piezoelectric material quasistatic method and system thereof
CN100439929C (en) * 2005-11-30 2008-12-03 中国科学院声学研究所 Transverse piezoelectric strain constant measuring method by piezoelectric material quasistatic method and system thereof
CN101074975A (en) * 2007-06-25 2007-11-21 武汉科技学院 Method for measuring thin-film piezoelectric coefficient d33
CN101430352A (en) * 2007-09-24 2009-05-13 中国科学院声学研究所 Measuring system and method for tangential piezoelectric strain constant of piezoelectric material by quasi-static method
CN104215840A (en) * 2014-09-01 2014-12-17 东华大学 Device and method for testing piezoelectric property of electrostatic spinning PVDF (polyvinylidene fluoride) piezoelectric fiber membrane
CN105759130A (en) * 2014-12-17 2016-07-13 北京纳米能源与系统研究所 Measurement device and measurement method for piezoelectric coefficient d33 of nanowire

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
叶正芳 等: "压电陶瓷压电应变常数d33的测试方法的研究", 《压电与声光》 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2753970C1 (en) * 2020-12-08 2021-08-24 федеральное государственное бюджетное образовательное учреждение высшего образования "Казанский национальный исследовательский технический университет им. А.Н.Туполева - КАИ" Device for measuring piezoelectric effect voltage in polymers
CN113049889A (en) * 2021-02-01 2021-06-29 佛山市卓膜科技有限公司 Detection method and measurement device for piezoelectric coefficient of piezoelectric film
CN113049889B (en) * 2021-02-01 2022-11-29 佛山市卓膜科技有限公司 Detection method and measurement device for piezoelectric coefficient of piezoelectric film
CN112986704A (en) * 2021-02-24 2021-06-18 电子科技大学 Longitudinal piezoelectric coefficient measuring method based on atomic force microscope
CN112986704B (en) * 2021-02-24 2022-05-03 电子科技大学 Longitudinal piezoelectric coefficient measuring method based on atomic force microscope
CN114325153A (en) * 2021-11-15 2022-04-12 北京无线电计量测试研究所 Current injection device and shell current conduction sensitivity testing device
CN114325153B (en) * 2021-11-15 2024-03-19 北京无线电计量测试研究所 Current injection device and shell current conduction sensitivity testing device

Similar Documents

Publication Publication Date Title
CN109030967A (en) Test the devices, systems, and methods of piezoelectric modulus
CN108982982A (en) The method of probe and test piezoelectric modulus
CN107004554B (en) Using online nanometer detection in the chip of process flow and the electroanalysis of chip chamber and process control
US7866056B2 (en) Calibration method and apparatus
CN101413972B (en) System and method for testing electric resistivity of thin film thermoelectricity material
CN105372499B (en) A kind of microresistivity survey equipment and measuring method
CN101784862B (en) Method for measuring surface profile of sample and apparatus for measuring surface profile of sample
US20050073323A1 (en) Measuring method and apparatus of thin film thickness
JP2000501842A (en) Multi-dimensional capacitance converter
WO2016176945A1 (en) Film thickness testing device and film thickness testing method
CN208255319U (en) Test the apparatus and system of piezoelectric modulus
CN101957682B (en) Method for implementing load identification interactive whiteboard
CN107036920A (en) Hardness testing device and hardness measuring method
CN208255271U (en) Probe
CN102017117A (en) Calibration of non-vibrating contact potential difference measurements to detect surface variations that are perpendicular to the direction of sensor motion
US7034563B1 (en) Apparatus for measuring of thin dielectric layer properties on semiconductor wafers with contact self aligning electrodes
CN110579651A (en) Piezoelectric coefficient measuring device
JP2012517103A (en) Patterned wafer inspection system using non-vibrating contact potential difference sensor
CN104931741B (en) Microprobe and preparation method thereof
CN107796957A (en) Probe, which lands, to be detected
JP2009510456A (en) Scanning probe microscopy and apparatus utilizing sample pitch
WO2013050252A1 (en) Sub-millinewton capacitive mems force sensor for mechanical testing on a microscope
CN117169231A (en) Composite material nondestructive testing system based on acousto-optic technology
JP2007121317A (en) Microcontact prober
CN111044803A (en) Piezoelectric coefficient measuring method for piezoelectric material

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20190703

Address after: 611600 Bajiao Village Group 5, Shou'an Town, Pujiang County, Chengdu City, Sichuan Province

Applicant after: Fang Rong

Address before: 610000 South Tianfu Avenue, Tianfu New District, Chengdu City, Sichuan Province, 2039 Tianfu Jingrong Building, 16th Floor, 1609

Applicant before: Chengdu Rui core technology Co., Ltd.

TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20200630

Address after: No.88, Yingbin Avenue, Shouan Town, Pujiang County, Chengdu City, Sichuan Province

Applicant after: Chengdu Dachao Technology Co.,Ltd.

Address before: 611600 Bajiao Village Group 5, Shou'an Town, Pujiang County, Chengdu City, Sichuan Province

Applicant before: Fang Rong

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20181211