CN109003910A - Irregular crystal round test approach and its computer readable storage medium based on full-automatic probe station - Google Patents
Irregular crystal round test approach and its computer readable storage medium based on full-automatic probe station Download PDFInfo
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- CN109003910A CN109003910A CN201810575129.3A CN201810575129A CN109003910A CN 109003910 A CN109003910 A CN 109003910A CN 201810575129 A CN201810575129 A CN 201810575129A CN 109003910 A CN109003910 A CN 109003910A
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- H01—ELECTRIC ELEMENTS
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
The present invention relates to a kind of irregular crystal round test approach and its computer readable storage medium based on full-automatic probe station, computer-readable recording medium storage has program, the program realizes the method when being executed by the processor of full-automatic probe station, irregular wafer is placed in the top surface of conducting resinl, is put on wafer-supporting platform by the aluminium sheet of conducting resinl bottom surface.Since the central axis of the ventilative circular hole on conducting resinl tilts, photographic device will not take the aluminium sheet of conducting resinl bottom surface.In test process, by carrying out gray proces to image captured by photographic device, edge of the outer profile of the selected maximum gray value non-zero color lump in periphery as irregular wafer, by the initial center of circle for selecting irregular wafer, determine its minimum circumscribed circle/maximum inscribed circle, full sheet scanning/boundary scan is carried out by wafer-scanning region of minimum circumscribed circle/maximum inscribed circle, realizes test of the full-automatic probe station to irregular wafer.
Description
Technical field
The present invention relates to a kind of irregular crystal round test approach based on full-automatic probe station and its computer-readable storages
Medium, computer-readable recording medium storage have program, when which is executed by the processor of full-automatic probe station described in realization
Method.
Background technique
Wafer need to carry out electric test to it using probe station, current probe station has semi-automatic and complete in the production phase
Automatic two kinds, wherein full-automatic probe station needs to position the wafer on wafer-supporting platform before testing, so that it is determined that the crystalline substance of wafer
Circular scan region, probe provide that wafer is tested in path (full sheet scanning or boundary scan) in wafer-scanning region.
During being positioned, wafer is placed in the wafer-supporting platform of full-automatic probe station, and the vacuum absorption device under wafer-supporting platform starts pumping
To which wafer to be securely adsorbed on wafer-supporting platform, the photographic device of full-automatic probe station shoots wafer, due to current city
Full-automatic probe station on face is tested just for the standard wafer that shape is standard circular, the processor of full-automatic probe station
It is easy to determine the center of circle and edge of wafer in the image captured by photographic device, and then determines wafer-scanning region.So
And above-mentioned full-automatic probe station is tested in irregular wafer non-type in face of shape with regard to powerless.
Summary of the invention
The purpose of the present invention is so that full-automatic probe station is tested irregular wafer.
For this purpose, providing a kind of irregular crystal round test approach based on full-automatic probe station, the full-automatic probe station is set
There are processor, the photographic device for shooting wafer, a wafer-supporting platform for placing wafer, is provided with below wafer-supporting platform for will be brilliant
The vacuum absorption device that is adsorbed on wafer-supporting platform of circle, the full-automatic probe station are equipped with that size is identical as standard wafer and surface light
Sliding aluminium sheet, the ontology of the aluminium sheet are equipped with the vacuum bothrium being made of a plurality of fluting being parallel to each other, the top surface of the aluminium sheet
It is covered with conducting resinl, the conducting resinl covers all the aluminium sheet, and the top surface of conducting resinl is and irregular crystal column surface color
Compared to the particular color with obvious color difference, the ventilative circular hole of array arrangement is distributed on conducting resinl, each in ventilative circular hole
Mandrel line is inclined non-vertical line, and the inclination angle of central axis and horizontal plane is greater than 40 °；The irregular wafer is placed in conduction
The top surface of glue, the wafer-supporting platform that the aluminium sheet with irregular wafer is placed on full-automatic probe station is tested, in test process
Photographic device shoots the positive image of the aluminium sheet, and processor executes following steps:
Step A: the gray value of the pixel of the particular color on image is adjusted to zero, by other color pixels on image
The gray value of point, which is adjusted to upper limit value, obtains the outer profile of the color lump of all gray value non-zeros on the image, and selectes it
Edge of the middle maximum outer profile in periphery as irregular wafer,
Step B: select a point as the initial center of circle of irregular wafer on the region where irregular wafer, so
Afterwards,
If staff selects irregular wafer to be scanned with full sheet scanning mode, then follow the steps C1；
If staff selects irregular wafer to be scanned with boundary scan mode, then follow the steps C2；
Step C1: the point L farthest away from the initial center of circle is chosen on the edge of irregular waferfarAnd it is true according to the two points
Determine radius rfar, using the initial center of circle as the center of circle, with radius rfarDetermine circle Rfar, make the initial center of circle towards point LfarMovement is until circle Rfar
Collapse to the edge of irregular wafer there are until second intersection point, then, it is determined that circle RfarFor minimum circumscribed circle, most with this
Small circumscribed circle is that wafer-scanning region carries out full sheet scanning；
Step C2: the point L nearest away from the initial center of circle is chosen on the edge of irregular wafernearAnd it is true according to the two points
Determine radius rnear, using the initial center of circle as the center of circle, with radius rnearDetermine circle Rnear, make the initial center of circle towards point LnearOpposite direction move
It moves until circle RfarIt is expanded to the edge of irregular wafer there are until second intersection point, then, it is determined that circle RnearFor most imperial palace
Circle is connect, carries out boundary scan by wafer-scanning region of the maximum inscribed circle.
Further, in step C1, make round RfarIt collapses to there are until second intersection point with the edge of irregular wafer
Mode be: successively go through other points L on the edge all over irregular waferi(1≤i≤n), going through all in, for each its
He is point Li, first using the initial center of circle as the center of circle, with point LiTo the distance r in the initial center of circleiCircle R is determined for radiusi, then basis
Formula 1 is calculated to make round RfarWith circle RiIt is overlapped, the initial center of circle is towards point LfarRequired Yi Dong Walk long J when mobilei；All go through
After, it is minimum circumscribed circle that circle corresponding to wherein minimum value is chosen in full Bu Walk long, is then crystalline substance with the minimum circumscribed circle
Circular scan region carries out full sheet scanning；Wherein formula 1 are as follows:α in formula1For
0 °, αiFor radius riWith the angle between initial center of circle moving direction；
In step C2, make round RfarIt is expanded to and there are the modes until second intersection point at the edge of irregular wafer is:
Successively go through other points L on the edge of irregular waferi(1≤i≤n) is being gone through in, for each other point Li, first
Using the initial center of circle as the center of circle, with point LiTo the distance r in the initial center of circleiCircle R is determined for radiusiIf then being calculated according to formula 2
Make round RnearWith circle RiIt is overlapped, the initial center of circle is towards point LnearOpposite direction it is mobile when required Yi Dong Walk long Ji；All go through time
Afterwards, full Bu Walk long JiIt is middle to choose circle R corresponding to wherein minimum valueiIt is then crystalline substance with the maximum inscribed circle for maximum inscribed circle
Circular scan region carries out boundary scan；Wherein formula 2 are as follows:α in formula1
It is 180 °, αiFor radius riWith the angle between initial center of circle moving direction.
In stepb, the selection mode in the initial center of circle specifically: in the edge of irregular wafer, according to wherein
Point (X positioned at the top1, Ymax) and positioned at bottom point (X2, Ymin) determine line L1, according to wherein positioned at the leftmost side
Point (Xmin, Y1) and point (X positioned at the rightmost sidemax, Y2) determine line L2, choose line L1With line L2Intersection point as irregular brilliant
The round initial center of circle.
Further, the particular color is white.
In step, an internal storage location is established for each pixel on image, each internal storage location forms a boundary
Point chained list, by internal storage location assignment P1 corresponding to the pixel of the particular color on image in boundary point chained list, by image
On other colour vegetarian refreshments corresponding to internal storage location assignment P2.
In step, the internal storage location size is 1bit, and the P1 is 0, and the P2 is 1.
Step C1 is during carrying out full sheet scanning, the scanning track of full-automatic probe station are as follows: sweeps in defined wafer
It retouches in region, first from left to right scans the first row, then scan the second row from right to left, then from left to right scan third
Row ..., so back and forth until whole region is scanned.
In step C1, before full-automatic probe station is scanned each cell in wafer-scanning region, first pass through
Boundary point chained list inquires whether internal storage location corresponding to the cell is assigned 1, i.e. inquiry is in the unit case originally
Whether internal storage location corresponding to the pixel set is assigned 1, if just executing scan operation, otherwise directly skips the unit
Lattice.
A kind of computer readable storage medium is also provided, program is stored with, which is obtained everywhere by full-automatic probe station
Reason device realizes method as discussed above when executing.
The utility model has the advantages that
Irregular wafer is placed in the top surface of conducting resinl, is put on wafer-supporting platform by the aluminium sheet of conducting resinl bottom surface.Due to
The central axis of ventilative circular hole on conducting resinl tilts, and photographic device will not take the aluminium sheet of conducting resinl bottom surface.Test process
In, by carrying out gray proces to image captured by photographic device, select the foreign steamer of the maximum gray value non-zero color lump in periphery
The wide edge as irregular wafer determines that its minimum circumscribed circle/maximum is inscribed by selecting the initial center of circle of irregular wafer
Circle carries out full sheet scanning/boundary scan by wafer-scanning region of minimum circumscribed circle/maximum inscribed circle, realizes full-automatic probe
Test of the platform to irregular wafer.
Detailed description of the invention
The invention is described further using attached drawing, but the embodiment in attached drawing is not constituted to the invention
Any restrictions for those of ordinary skill in the art without creative efforts, can also be according to following attached
Figure obtains other attached drawings.
Fig. 1 is structure chart when irregular wafer is placed on aluminium sheet.
Fig. 2 is the sectional view of conducting resinl.
Fig. 3 is the implementation flow chart of irregular crystal round test approach.
Fig. 4 is the schematic diagram in the determining initial center of circle of irregular wafer.
Fig. 5 is the implementation diagram of step C1.
Fig. 6 is the implementation diagram of step C2.
Specific embodiment
See Fig. 1, in the present embodiment, is related to aluminium sheet 3, conducting resinl 2, irregular wafer 1 to be measured and not shown in the figure complete
Automatic prober platform, full-automatic probe station are used for test wafer.
There are conventional arrangement of processor, the photographic device for shooting wafer on full-automatic probe station, for placing wafer
Wafer-supporting platform, be provided with for the vacuum absorption device by wafer adsorption on wafer-supporting platform below wafer-supporting platform.
Aluminium sheet 3 is the aluminium sheet 3 that size is identical as standard wafer and surface is smooth, and the ontology of aluminium sheet 3 is equipped with by a plurality of mutual
The vacuum bothrium 31 of parallel fluting composition, the top surface of aluminium sheet 3 are covered with conducting resinl 2 (preferably silica gel), and the top surface of conducting resinl 2 is
There is the white of obvious color difference compared with irregular 1 surface color of wafer, which covers all aluminium sheet 3 thus by aluminium
Plate 3 covers up.
The ventilative circular hole 21 of array arrangement is distributed on conducting resinl 2, sees Fig. 2, the central axis of each ventilative circular hole 21 is
The inclination angle of inclined non-vertical line, central axis and horizontal plane is 45 °, since central axis tilts, the hole of 2 top surface of conducting resinl
It can be staggered completely with the hole of bottom surface, such photographic device would not be taken by ventilative circular hole 21 above conducting resinl 2 and be led
The aluminium sheet 3 of electric 2 lower section of glue.
Since the table top and standard wafer of wafer-supporting platform are mating, irregular wafer 1 need to be placed in the top surface of conducting resinl 2, pass through
Shape aluminium sheet 3 identical with standard wafer is put on wafer-supporting platform, and the aluminium sheet 3 with irregular wafer 1 is placed on automatically
The wafer-supporting platform of probe station is tested, and the vacuum absorption device in test process below wafer-supporting platform starts air-breathing, successively by true
Irregular wafer 1 is securely adsorbed on to the top surface of conducting resinl 2 after suction slot 31 and ventilative circular hole 21.
See Fig. 3, the computer scanning method based on irregular 1 marginal test of wafer of the present embodiment is written as program,
Program is stored in the computer readable storage medium of full-automatic probe station, when program is executed by full-automatic probe station, automatically
The positive image of the photographic device shooting aluminium sheet 3 of probe station, and by image transmitting to the processor of full-automatic probe station, processing
Device executes following steps:
Step A: the internal storage location of a 1bit is established for each pixel on image, each internal storage location composition is on one side
Boundary's point chained list adjusts the gray value of the white pixel point on image to 0, and the white pixel point institute is given in boundary point chained list
Corresponding internal storage location assignment 0 adjusts the gray value of other colour vegetarian refreshments on image to 255, and in boundary point chained list
To internal storage location assignment 1 corresponding to other colour vegetarian refreshments, so that whole image, which shows, significantly only has black and white view
Feel effect, on the image, obtains the outer profile of the color lump of all gray value non-zeros, and the selected maximum outer profile in wherein periphery is made
For the edge of irregular wafer 1.
Step B: being shown in Fig. 4, in the edge of irregular wafer 1, according to point (X1, Ymax) and the position for being wherein located at the top
Line L1 is determined in the point (X2, Ymin) of bottom, according to being wherein located at the point (Xmin, Y1) of the leftmost side and positioned at the rightmost side
Point (Xmax, Y2) determines line L2, chooses the initial center of circle of the intersection point of line L1 and line L2 as irregular wafer 1, then,
If staff selects to be scanned irregular wafer 1 with full sheet scanning mode, full-automatic probe station is held
Row step C1；
If staff selects to be scanned irregular wafer 1 with boundary scan mode, full-automatic probe station is held
Row step C2.
Step C1: being shown in Fig. 5, and the point L farthest away from the initial center of circle is chosen on the edge of irregular wafer 1farAnd according to this two
A point determines radius rfar, then using the initial center of circle as the center of circle, with radius rfarResulting round RfarThe complete of irregular wafer 1 will be contained
Other points L on the edge of irregular wafer 1 is successively gone through at portion edgei(1≤i≤n), going through all in, for each other
Point Li, first using the initial center of circle as the center of circle, with point LiTo the distance r in the initial center of circleiCircle R is determined for radiusi, then according to public affairs
Formula 1 is calculated to make round RfarWith circle RiIt is overlapped, the initial center of circle is towards point LfarRequired Yi Dong Walk long J when mobilei；All go through time
Afterwards, it is minimum circumscribed circle that circle corresponding to wherein minimum value is chosen in full Bu Walk long, then using the minimum circumscribed circle as wafer
Scanning area carries out full sheet scanning；Wherein formula 1 are as follows:α in formula1
It is 0 °, αiFor radius riWith the angle between initial center of circle moving direction；
Further, step C1 is during carrying out full sheet scanning, the scanning track of full-automatic probe station are as follows: providing
Wafer-scanning region in, first from left to right scan the first row, then scan the second row from right to left, then from left to right scan the
Three rows ..., so back and forth until whole region is scanned.In step C1, full-automatic probe station is to wafer-scanning area
Before each cell in domain is scanned, first pass through boundary point chained list inquire internal storage location corresponding to the cell whether by
Being assigned a value of 1, i.e. inquiry is in whether internal storage location corresponding to the pixel of the cell location is assigned 1 originally, if
Scan operation is just executed, the cell is otherwise directly skipped.
Step C2: being shown in Fig. 6, and the point L nearest away from the initial center of circle is chosen on the edge of irregular wafer 1nearAnd according to this
Two points determine radius rnear, then using the initial center of circle as the center of circle, with radius rnearResulting round RnearIt will be wrapped by irregular wafer 1
Hold, successively goes through other points L on the edge of irregular wafer 1i(1≤i≤n) is being gone through in, for each other point Li,
First using the initial center of circle as the center of circle, with point LiTo the distance r in the initial center of circleiCircle R is determined for radiusi, then counted according to formula 2
It calculates to make round RnearWith circle RiIt is overlapped, the initial center of circle is towards point LnearOpposite direction it is mobile when required Yi Dong Walk long Ji；All
It goes through after, full Bu Walk long JiIt is middle to choose circle R corresponding to wherein minimum valueiFor maximum inscribed circle, then with the maximum inscribed circle
Boundary scan is carried out for wafer-scanning region；Wherein formula 2 are as follows:
α in formula1It is 180 °, αiFor radius riWith the angle between initial center of circle moving direction.
Finally it should be noted that above embodiments are only to illustrate the technical solution of the invention, rather than to this hair
It is bright create protection scope limitation, although being explained in detail referring to preferred embodiment to the invention, this field it is general
Lead to it will be appreciated by the skilled person that can be modified or replaced equivalently to the technical solution of the invention, without departing from this
The spirit and scope of innovation and creation technical solution.
Claims (9)
1. the irregular crystal round test approach based on full-automatic probe station, the full-automatic probe station is equipped with processor, for clapping
Photographic device, the wafer-supporting platform for placing wafer for taking the photograph wafer, be provided with below wafer-supporting platform for by wafer adsorption in wafer-supporting platform
On vacuum absorption device,
It is characterized in that:
The full-automatic probe station is equipped with the aluminium sheet that size is identical as standard wafer and surface is smooth, and the ontology of the aluminium sheet is equipped with
The vacuum bothrium being made of a plurality of fluting being parallel to each other, the top surface of the aluminium sheet are covered with conducting resinl, and the conducting resinl is complete
The aluminium sheet is covered, the top surface of conducting resinl is the particular color compared with irregular crystal column surface color with obvious color difference,
The ventilative circular hole of array arrangement is distributed on conducting resinl, the central axis of each ventilative circular hole is inclined non-vertical line, center
The inclination angle of axis and horizontal plane is greater than 40 °；The irregular wafer is placed in the top surface of conducting resinl, the aluminium with irregular wafer
The wafer-supporting platform that plate is placed on full-automatic probe station is tested, and photographic device shoots the positive of the aluminium sheet in test process
Image, processor execute following steps:
Step A: the gray value of the pixel of the particular color on image is adjusted to zero, by other colour vegetarian refreshments on image
Gray value adjusts to upper limit value and obtains the outer profile of the color lump of all gray value non-zeros on the image, and selectes its China and foreign countries
Edge of all maximum outer profiles as irregular wafer,
Step B: selecting a point as the initial center of circle of irregular wafer on the region where irregular wafer, then,
If staff selects irregular wafer to be scanned with full sheet scanning mode, then follow the steps C1；
If staff selects irregular wafer to be scanned with boundary scan mode, then follow the steps C2；
Step C1: the point L farthest away from the initial center of circle is chosen on the edge of irregular waferfarAnd half is determined according to the two points
Diameter rfar, using the initial center of circle as the center of circle, with radius rfarDetermine circle Rfar, make the initial center of circle towards point LfarMovement is until circle RfarIt collapses
To with the edge of irregular wafer there are until second intersection point, then, it is determined that circle RfarFor minimum circumscribed circle, with the minimum outside
Connecing circle is that wafer-scanning region carries out full sheet scanning；
Step C2: the point L nearest away from the initial center of circle is chosen on the edge of irregular wafernearAnd half is determined according to the two points
Diameter rnear, using the initial center of circle as the center of circle, with radius rnearDetermine circle Rnear, make the initial center of circle towards point LnearOpposite direction it is mobile straight
To circle RfarIt is expanded to the edge of irregular wafer there are until second intersection point, then, it is determined that circle RnearIt is inscribed for maximum
Circle carries out boundary scan by wafer-scanning region of the maximum inscribed circle.
2. the irregular crystal round test approach according to claim 1 based on full-automatic probe station, characterized in that
In step C1, make round RfarCollapse to there are the modes until second intersection point at the edge of irregular wafer is: successively
Go through other points L on the edge of irregular waferi(1≤i≤n) is being gone through in, for each other point Li, first with first
The beginning center of circle is the center of circle, with point LiTo the distance r in the initial center of circleiCircle R is determined for radiusi, then calculated according to formula 1 to make
Circle RfarWith circle RiIt is overlapped, the initial center of circle is towards point LfarRequired Yi Dong Walk long J when mobilei；It all goes through after, full Bu Walk long
It is middle to choose circle corresponding to wherein minimum value as minimum circumscribed circle, it is then carried out using the minimum circumscribed circle as wafer-scanning region complete
Piece scanning；Wherein formula 1 are as follows:α in formula1It is 0 °, αiFor radius riWith it is first
Angle between beginning center of circle moving direction；
In step C2, make round RfarIt is expanded to and there are the modes until second intersection point at the edge of irregular wafer is: successively
Go through other points L on the edge of irregular waferi(1≤i≤n) is being gone through in, for each other point Li, first with first
The beginning center of circle is the center of circle, with point LiTo the distance r in the initial center of circleiCircle R is determined for radiusi, then calculated according to formula 2 to make
Circle RnearWith circle RiIt is overlapped, the initial center of circle is towards point LnearOpposite direction it is mobile when required Yi Dong Walk long Ji；It all goes through after,
Full Bu Walk long JiIt is middle to choose circle R corresponding to wherein minimum valueiFor maximum inscribed circle, then using the maximum inscribed circle as wafer
Scanning area carries out boundary scan；Wherein formula 2 are as follows:α in formula1For
180 °, αiFor radius riWith the angle between initial center of circle moving direction.
3. the irregular crystal round test approach according to claim 1 based on full-automatic probe station, characterized in that in step
In B, the selection mode in the initial center of circle specifically: in the edge of irregular wafer, according to the point for being wherein located at the top
(X1, Ymax) and positioned at bottom point (X2, Ymin) determine line L1, according to the point (X for being wherein located at the leftmost sidemin, Y1) and position
Point (X in the rightmost sidemax, Y2) determine line L2, choose line L1With line L2Intersection point make the initial center of circle as irregular wafer.
4. the irregular crystal round test approach according to claim 1 based on full-automatic probe station, characterized in that the spy
Color is determined for white.
5. the irregular crystal round test approach according to claim 4 based on full-automatic probe station, characterized in that in step
In A, an internal storage location is established for each pixel on image, each internal storage location forms a boundary point chained list, on boundary
By internal storage location assignment P1 corresponding to the pixel of the particular color on image in point chained list, by other color pixels on image
The corresponding internal storage location assignment P2 of point.
6. the irregular crystal round test approach according to claim 5 based on full-automatic probe station, characterized in that in step
In A, the internal storage location size is 1bit, and the P1 is 0, and the P2 is 1.
7. the irregular crystal round test approach according to claim 6 based on full-automatic probe station, characterized in that step C1
During carrying out full sheet scanning, the scanning track of full-automatic probe station are as follows: in defined wafer-scanning region, first from a left side
To right scanning the first row, the second row is then scanned from right to left, then from left to right scan the third line ..., it is so straight back and forth
It is scanned to whole region.
8. the irregular crystal round test approach according to claim 6 based on full-automatic probe station, characterized in that in step
In C1, before full-automatic probe station is scanned each cell in wafer-scanning region, the inquiry of boundary point chained list is first passed through
Whether internal storage location corresponding to the cell is assigned 1, i.e., the pixel institute in the cell location is right originally for inquiry
Whether the internal storage location answered is assigned 1, if just executing scan operation, otherwise directly skips the cell.
9. computer readable storage medium is stored thereon with program, characterized in that the program realizes right when being executed by processor
It is required that the described in any item irregular crystal round test approach based on full-automatic probe station of 1-8.
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| CN115055301A (en) * | 2022-05-30 | 2022-09-16 | 上海应用技术大学 | Automatic spraying machine with visual positioning function for experiments |
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