CN109003910B - Irregular wafer testing method based on full-automatic probe station and computer readable storage medium thereof - Google Patents
Irregular wafer testing method based on full-automatic probe station and computer readable storage medium thereof Download PDFInfo
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- CN109003910B CN109003910B CN201810575129.3A CN201810575129A CN109003910B CN 109003910 B CN109003910 B CN 109003910B CN 201810575129 A CN201810575129 A CN 201810575129A CN 109003910 B CN109003910 B CN 109003910B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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Abstract
The invention relates to an irregular wafer testing method based on a full-automatic probe station and a computer readable storage medium thereof, wherein the computer readable storage medium stores a program, the program is executed by a processor of the full-automatic probe station to realize the method, the irregular wafer is placed on the top surface of conductive adhesive, and is placed on a wafer bearing table through an aluminum plate on the bottom surface of the conductive adhesive. Because the central axis of the ventilation round hole on the conductive adhesive inclines, the camera device can not shoot the aluminum plate on the bottom surface of the conductive adhesive. In the testing process, the image shot by the camera device is subjected to gray processing, the outer contour of the gray-value nonzero color block with the largest periphery is selected as the edge of the irregular wafer, the minimum circumscribed circle/the maximum inscribed circle of the irregular wafer is determined by selecting the initial circle center of the irregular wafer, and the minimum circumscribed circle/the maximum inscribed circle are used as the wafer scanning area to carry out full-wafer scanning/edge scanning, so that the testing of the irregular wafer by the full-automatic probe station is realized.
Description
Technical Field
The invention relates to an irregular wafer testing method based on a full-automatic probe station and a computer readable storage medium thereof, wherein the computer readable storage medium stores a program, and the program realizes the method when being executed by a processor of the full-automatic probe station.
Background
In the production stage of the wafer, a probe station is required to be adopted to electrically test the wafer, the existing probe station has a semi-automatic mode and a full-automatic mode, wherein the full-automatic probe station is required to position the wafer on a wafer bearing table before testing so as to determine the wafer scanning area of the wafer, and the probe is used for testing the wafer in a specified path (full-wafer scanning or edge scanning) in the wafer scanning area. In the positioning process, a wafer is placed in a wafer bearing table of a full-automatic probe table, a vacuum adsorption device below the wafer bearing table starts to exhaust so as to firmly adsorb the wafer on the wafer bearing table, and a camera device of the full-automatic probe table shoots the wafer. However, the fully automatic probe station described above is unable to test when faced with irregular wafers that are not standard in shape.
Disclosure of Invention
The invention aims to enable a full-automatic probe station to test irregular wafers.
Therefore, the irregular wafer testing method based on the full-automatic probe station is provided, the full-automatic probe station is provided with a processor, a camera device for shooting the wafer and a wafer bearing table for placing the wafer, a vacuum adsorption device for adsorbing the wafer on the wafer bearing table is arranged below the wafer bearing table, the full-automatic probe station is provided with an aluminum plate which has the same size as a standard wafer and a smooth surface, the body of the aluminum plate is provided with a vacuum suction groove consisting of a plurality of parallel grooves, the top surface of the aluminum plate is covered with conductive adhesive, the conductive adhesive completely covers the aluminum plate, the top surface of the conductive adhesive is in a specific color with obvious color difference compared with the color of the surface of an irregular wafer, the conductive adhesive is distributed with air-permeable circular holes which are arranged in an array manner, the central axis of each air-permeable circular hole is an inclined non-vertical line, and the inclination angle between the central axis and the horizontal plane is larger than 40 degrees; the irregular wafer is placed on the top surface of the conductive adhesive, the aluminum plate with the irregular wafer is placed on a wafer bearing table of the full-automatic probe station for testing, the image of the front surface of the aluminum plate is shot by the camera device in the testing process, and the processor executes the following steps:
step A: adjusting the gray value of the pixel point of a specific color on the image to zero, adjusting the gray values of the pixel points of other colors on the image to an upper limit value, acquiring the outer contour of a color block with nonzero gray value on the image, selecting the outer contour with the largest outer periphery as the edge of an irregular wafer,
and B: selecting a point in the area of the irregular wafer as the initial circle center of the irregular wafer, and then,
if the worker chooses to scan the irregular wafer in the full-wafer scanning manner, executing step C1;
if the worker chooses to scan the irregular wafer in the edge scanning manner, the step C2 is executed;
c1 selecting the point L farthest from the initial center of the circle on the edge of the irregular waferfarAnd determining the radius r from these two pointsfarUsing the initial circle center as the circle center and the radius rfarDetermine the circle RfarTo make the initial center of the circle facePoint LfarMove until the circle RfarConverging until a second intersection point exists with the edge of the irregular wafer, and determining a circle RfarTaking the minimum circumcircle as a wafer scanning area to carry out full-wafer scanning;
c2 selecting the nearest point L to the initial center of the circle on the edge of the irregular wafernearAnd determining the radius r from these two pointsnearUsing the initial circle center as the circle center and the radius rnearDetermine the circle RnearCentering the initial circle toward point LnearIs moved in the opposite direction until the circle RfarExpanding until a second intersection exists with the edge of the irregular wafer, and then determining a circle RnearThe maximum inscribed circle is used as a wafer scanning area to carry out edge scanning.
Further, in step C1, the circle R is roundedfarUntil a second intersection exists with the edge of the irregular wafer, the second intersection passes through other points L on the edge of the irregular waferi(1 ≦ i ≦ n), L for each of the other points in the traversaliFirst, the initial center of the circle is used as the center of the circle, and the point L is used as the centeriDistance r to initial center of circleiDetermining a circle R for the radiusiThen, the calculation is made according to equation 1 if the circle R is to be roundedfarAnd the circle RiCoincident, initial center of circle towards point LfarWalking needed to move during movingi(ii) a After all the steps are performed, selecting a circle corresponding to the minimum value from all the steps as a minimum circumscribed circle, and then performing full-wafer scanning by taking the minimum circumscribed circle as a wafer scanning area; wherein equation 1 is:
formula (III) α1Is 0 DEG, αiIs radius riThe included angle between the initial circle center moving direction and the initial circle center moving direction;
in step C2, make circle RfarThe extension to the second intersection with the edge of the irregular wafer is by sequentially traversing the other points L on the edge of the irregular waferi(1 ≦ i ≦ n), L for each of the other points in the traversaliFirst, the initial center of the circle is used as the center of the circle, and the point L is used as the centeriDistance r to initial center of circleiDetermining a circle R for the radiusiThen, according to formula 2, calculating if the circle R is to be madenearAnd the circle RiCoincident, initial center of circle towards point LnearWalking step length J required to move during reverse direction movementi(ii) a After all the steps are performed, all the steps are growniSelecting the circle R corresponding to the minimum valueiTaking the maximum inscribed circle as a maximum inscribed circle, and then taking the maximum inscribed circle as a wafer scanning area for edge scanning; wherein equation 2 is:
formula (III) α1Is 180 DEG, αiIs radius riAnd the moving direction of the initial circle center.
In step B, the selection mode of the initial circle center is specifically: in the edge of the irregular wafer, according to the point (X) located uppermost therein1，Ymax) And a point (X) located at the lowermost position2，Ymin) To determine line L1According to the point (X) located at the leftmost side thereofmin，Y1) And the point (X) located at the rightmost sidemax，Y2) To determine line L2Selection line L1And line L2The intersection point of the two points is used as the initial circle center of the irregular wafer.
Further, the specific color is white.
In step a, a memory unit is established for each pixel point on the image, each memory unit forms a boundary point chain table, the memory unit corresponding to the pixel point of the specific color on the image is assigned with P1 in the boundary point chain table, and the memory unit corresponding to the pixel point of other colors on the image is assigned with P2.
In step a, the size of the memory cell is 1bit, the P1 is 0, and the P2 is 1.
Step C1, in the process of full-wafer scanning, the scanning track of the full-automatic probe station is: in the specified wafer scanning area, the first row is scanned from left to right, then the second row is scanned from right to left, and then the third row … … is scanned from left to right, and the above steps are repeated until all the areas are scanned.
In step C1, before the full-automatic probe station scans each cell in the wafer scanning area, it is first queried through the boundary point chain table whether the memory cell corresponding to the cell is assigned with 1, that is, it is queried whether the memory cell corresponding to the pixel point originally located at the cell position is assigned with 1, if so, the scanning operation is executed, otherwise, the cell is skipped directly.
There is also provided a computer readable storage medium storing a program which when executed by a processor of a fully automated probe station implements the method described above.
Has the advantages that:
the irregular wafer is placed on the top surface of the conductive adhesive, and placed on the wafer bearing table through the aluminum plate on the bottom surface of the conductive adhesive. Because the central axis of the ventilation round hole on the conductive adhesive inclines, the camera device can not shoot the aluminum plate on the bottom surface of the conductive adhesive. In the testing process, the image shot by the camera device is subjected to gray processing, the outer contour of the gray-value nonzero color block with the largest periphery is selected as the edge of the irregular wafer, the minimum circumscribed circle/the maximum inscribed circle of the irregular wafer is determined by selecting the initial circle center of the irregular wafer, and the minimum circumscribed circle/the maximum inscribed circle are used as the wafer scanning area to carry out full-wafer scanning/edge scanning, so that the testing of the irregular wafer by the full-automatic probe station is realized.
Drawings
The invention is further described with the aid of the accompanying drawings, in which, however, the embodiments do not constitute any limitation to the invention, and for a person skilled in the art, without inventive effort, further drawings may be derived from the following figures.
Fig. 1 is a structural view of an irregular wafer placed on an aluminum plate.
Fig. 2 is a cross-sectional view of the conductive paste.
FIG. 3 is a flowchart illustrating an implementation of an irregular wafer testing method.
FIG. 4 is a schematic diagram of determining an initial center of an irregular wafer.
Fig. 5 is a schematic diagram of the implementation of step C1.
Fig. 6 is a schematic diagram of the implementation of step C2.
Detailed Description
Referring to fig. 1, in the embodiment, an aluminum plate 3, a conductive adhesive 2, an irregular wafer 1 to be tested, and a full-automatic probe station not shown in the figure are involved, and the full-automatic probe station is used for testing the wafer.
The full-automatic probe station is provided with a processor, a camera device and a wafer bearing table, wherein the processor is arranged conventionally, the camera device is used for shooting wafers, the wafer bearing table is used for placing the wafers, and a vacuum adsorption device is arranged below the wafer bearing table and used for adsorbing the wafers on the wafer bearing table.
The ventilative round hole 21 that the array was arranged that distributes on the conducting resin 2, see fig. 2, the central axis of every ventilative round hole 21 is the non-vertical line of slope, and the central axis is 45 with the inclination of horizontal plane, because the central axis slope, the hole of conducting resin 2 top surface can stagger completely with the hole of bottom surface, so camera device just can not shoot the aluminum plate 3 of conducting resin 2 below through ventilative round hole 21 from conducting resin 2 top.
Because the table top of the wafer bearing table is matched with the standard wafer, the irregular wafer 1 needs to be placed on the top surface of the conductive adhesive 2, the aluminum plate 3 with the same shape as the standard wafer is placed on the wafer bearing table of the full-automatic probe table for testing, the vacuum adsorption device below the wafer bearing table starts to suck air in the testing process, and the irregular wafer 1 is firmly adsorbed on the top surface of the conductive adhesive 2 after sequentially passing through the vacuum suction groove 31 and the ventilation round hole 21.
Referring to fig. 3, the computer scanning method based on the edge test of the irregular wafer 1 of the embodiment is written as a program, the program is stored in a computer readable storage medium of the fully automatic probe station, when the program is executed by the fully automatic probe station, the image capturing device of the fully automatic probe station captures an image of the front surface of the aluminum plate 3 and transmits the image to the processor of the fully automatic probe station, and the processor executes the following steps:
step A: establishing a 1-bit memory cell for each pixel point on an image, forming a boundary point linked list by each memory cell, adjusting the gray value of a white pixel point on the image to 0, assigning 0 to the memory cell corresponding to the white pixel point in the boundary point linked list, adjusting the gray value of other color pixel points on the image to 255, assigning 1 to the memory cell corresponding to the other color pixel points in the boundary point linked list, so that the whole image presents an obvious visual effect only of black and white, acquiring the outline of a color block with nonzero gray value on the image, and selecting the outline with the largest periphery as the edge of an irregular wafer 1.
Step B, referring to fig. 4, in the edge of the irregular wafer 1, a line L1 is determined from the uppermost point (X1, Ymax) and the lowermost point (X2, Ymin), a line L2 is determined from the leftmost point (Xmin, Y1) and the rightmost point (Xmax, Y2), the intersection of the line L1 and the line L2 is selected as the initial center of the irregular wafer 1, and then,
if the worker selects to scan the irregular wafer 1 in a full-wafer scanning mode, the full-automatic probe station executes the step C1;
if the worker chooses to scan the irregular wafer 1 by edge scan, the fully automated prober performs step C2.
Step C1, see FIG. 5, select point L farthest from the initial center of circle on the edge of irregular wafer 1farAnd determining the radius r from these two pointsfarThen the initial circle center is used as the circle center and the radius r is usedfarResulting circle RfarWill cover the entire edge of the irregular wafer 1 and will successively pass through other points L on the edge of the irregular wafer 1i(1 ≦ i ≦ n), L for each of the other points in the traversaliFirst, the initial center of the circle is used as the center of the circle, and the point L is used as the centeriDistance r to initial center of circleiDetermining a circle R for the radiusiThen, howeverThen, according to formula 1, calculating if the circle R is required to be formedfarAnd the circle RiCoincident, initial center of circle towards point LfarWalking needed to move during movingi(ii) a After all the steps are performed, selecting a circle corresponding to the minimum value from all the steps as a minimum circumscribed circle, and then performing full-wafer scanning by taking the minimum circumscribed circle as a wafer scanning area; wherein equation 1 is:
formula (III) α1Is 0 DEG, αiIs radius riThe included angle between the initial circle center moving direction and the initial circle center moving direction;
further, in the step C1, in the process of performing full scan, the scanning track of the fully automatic probe station is: in the specified wafer scanning area, the first row is scanned from left to right, then the second row is scanned from right to left, and then the third row … … is scanned from left to right, and the above steps are repeated until all the areas are scanned. In step C1, before the full-automatic probe station scans each cell in the wafer scanning area, it is first queried through the boundary point chain table whether the memory cell corresponding to the cell is assigned with 1, that is, it is queried whether the memory cell corresponding to the pixel point originally located at the cell position is assigned with 1, if so, the scanning operation is executed, otherwise, the cell is skipped directly.
Step C2, see FIG. 6, select point L closest to the initial center of circle on the edge of irregular wafer 1nearAnd determining the radius r from these two pointsnearThen the initial circle center is used as the circle center and the radius r is usednearResulting circle RnearWill be contained by the irregular wafer 1 and will sequentially pass through other points L on the edge of the irregular wafer 1i(1 ≦ i ≦ n), L for each of the other points in the traversaliFirst, the initial center of the circle is used as the center of the circle, and the point L is used as the centeriDistance r to initial center of circleiDetermining a circle R for the radiusiThen, according to formula 2, calculating if the circle R is to be madenearAnd the circle RiCoincident, initial center of circle towards point LnearWalking step length J required to move during reverse direction movementi(ii) a After all the steps are performed, all the steps are growniIn selectionWherein the circle R corresponding to the minimum valueiTaking the maximum inscribed circle as a maximum inscribed circle, and then taking the maximum inscribed circle as a wafer scanning area for edge scanning; wherein equation 2 is:
formula (III) α1Is 180 DEG, αiIs radius riAnd the moving direction of the initial circle center.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (9)
1. An irregular wafer testing method based on a full-automatic probe station is provided with a processor, a camera device for shooting a wafer and a wafer bearing table for placing the wafer, wherein a vacuum adsorption device for adsorbing the wafer on the wafer bearing table is arranged below the wafer bearing table,
the method is characterized in that:
the full-automatic probe station is provided with an aluminum plate which has the same size as a standard wafer and a smooth surface, a body of the aluminum plate is provided with a vacuum suction groove formed by a plurality of parallel grooves, the top surface of the aluminum plate is covered with conductive adhesive, the conductive adhesive completely covers the aluminum plate, the top surface of the conductive adhesive is in a color which has obvious color difference compared with the color of the surface of an irregular wafer, the conductive adhesive is distributed with air-permeable round holes which are arranged in an array manner, the central axis of each air-permeable round hole is an inclined non-vertical line, and the inclination angle between the central axis and the horizontal plane is more; the irregular wafer is placed on the top surface of the conductive adhesive, the aluminum plate with the irregular wafer is placed on a wafer bearing table of the full-automatic probe station for testing, the image of the front surface of the aluminum plate is shot by the camera device in the testing process, and the processor executes the following steps:
step A: adjusting the gray value of pixel points of the color of the top surface of the conductive adhesive on the image to zero, adjusting the gray value of pixel points of other colors on the image to an upper limit value, acquiring the outer contour of a color block with nonzero gray value on the image, selecting the outer contour with the largest outer periphery as the edge of the irregular wafer,
and B: selecting a point in the area of the irregular wafer as the initial circle center of the irregular wafer, and then,
if the worker chooses to scan the irregular wafer in the full-wafer scanning manner, executing step C1;
if the worker chooses to scan the irregular wafer in the edge scanning manner, the step C2 is executed;
c1 selecting the point L farthest from the initial center of the circle on the edge of the irregular waferfarAnd determining the radius r from these two pointsfarUsing the initial circle center as the circle center and the radius rfarDetermine the circle RfarCentering the initial circle toward point LfarMove until the circle RfarConverging until a second intersection point exists with the edge of the irregular wafer, and determining a circle RfarTaking the minimum circumcircle as a wafer scanning area to carry out full-wafer scanning;
c2 selecting the nearest point L to the initial center of the circle on the edge of the irregular wafernearAnd determining the radius r from these two pointsnearUsing the initial circle center as the circle center and the radius rnearDetermine the circle RnearCentering the initial circle toward point LnearIs moved in the opposite direction until the circle RfarExpanding until a second intersection exists with the edge of the irregular wafer, and then determining a circle RnearThe maximum inscribed circle is used as a wafer scanning area to carry out edge scanning.
2. The method for testing irregular wafers based on the fully automatic probe station as claimed in claim 1,
in step C1, make circle RfarThe mode of converging until a second intersection point exists between the edge of the irregular wafer and the edge of the irregular wafer is as follows: irregular crystals are formed in sequenceOther points L on the edge of the circlei(1 ≦ i ≦ n), L for each of the other points in the traversaliFirst, the initial center of the circle is used as the center of the circle, and the point L is used as the centeriDistance r to initial center of circleiDetermining a circle R for the radiusiThen, the calculation is made according to equation 1 if the circle R is to be roundedfarAnd the circle RiCoincident, initial center of circle towards point LfarWalking needed to move during movingi(ii) a After all the steps are performed, selecting a circle corresponding to the minimum value from all the steps as a minimum circumscribed circle, and then performing full-wafer scanning by taking the minimum circumscribed circle as a wafer scanning area; wherein equation 1 is:
formula (III) α1Is 0 DEG, αiIs radius riThe included angle between the initial circle center moving direction and the initial circle center moving direction;
in step C2, make circle RfarThe extension to the second intersection with the edge of the irregular wafer is by sequentially traversing the other points L on the edge of the irregular waferi(1 ≦ i ≦ n), L for each of the other points in the traversaliFirst, the initial center of the circle is used as the center of the circle, and the point L is used as the centeriDistance r to initial center of circleiDetermining a circle R for the radiusiThen, according to formula 2, calculating if the circle R is to be madenearAnd the circle RiCoincident, initial center of circle towards point LnearWalking step length J required to move during reverse direction movementi(ii) a After all the steps are performed, all the steps are growniSelecting the circle R corresponding to the minimum valueiTaking the maximum inscribed circle as a maximum inscribed circle, and then taking the maximum inscribed circle as a wafer scanning area for edge scanning; wherein equation 2 is:
formula (III) α1Is 180 DEG, αiIs radius riAnd the moving direction of the initial circle center.
3. The fully automated probe station based irregular wafer tester of claim 1The method is characterized in that in the step B, the selection mode of the initial circle center is as follows: in the edge of the irregular wafer, according to the point (X) located uppermost therein1，Ymax) And a point (X) located at the lowermost position2，Ymin) To determine line L1According to the point (X) located at the leftmost side thereofmin，Y1) And the point (X) located at the rightmost sidemax，Y2) To determine line L2Selection line L1And line L2The intersection point of the two points is used as the initial circle center of the irregular wafer.
4. The method as claimed in claim 1, wherein the top surface of the conductive paste is white.
5. The method as claimed in claim 4, wherein in step A, a memory cell is established for each pixel on the image, each memory cell forms a boundary point chain table, the memory cells corresponding to the pixels of the color on the top surface of the conductive adhesive on the image are assigned with P1, and the memory cells corresponding to the pixels of other colors on the image are assigned with P2.
6. The method as claimed in claim 5, wherein in step A, the cell size is 1bit, the P1 is 0, and the P2 is 1.
7. The irregular wafer testing method based on the fully automatic probe station as claimed in claim 6, wherein in the step C1, during the full scan, the scanning track of the fully automatic probe station is: in the specified wafer scanning area, the first row is scanned from left to right, then the second row is scanned from right to left, and then the third row … … is scanned from left to right, and the above steps are repeated until all the areas are scanned.
8. The method as claimed in claim 6, wherein in step C1, before the full-automatic probe station scans each cell in the wafer scanning area, the full-automatic probe station queries whether the memory cell corresponding to the cell is assigned with 1 through the boundary point chain table, that is, queries whether the memory cell corresponding to the pixel point originally located at the cell is assigned with 1, if yes, the scanning operation is performed, otherwise, the cell is skipped directly.
9. A computer readable storage medium having a program stored thereon, wherein the program, when executed by a processor, implements the fully automated probe station based irregular wafer test method of any of claims 1-8.
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| JPH0658933B2 (en) * | 1984-05-22 | 1994-08-03 | 東京エレクトロン株式会社 | Positioning method for semiconductor wafer |
| JPH0210102A (en) * | 1988-06-28 | 1990-01-12 | Tdk Corp | Detection of positioning mark on board |
| JPH06174442A (en) * | 1992-12-01 | 1994-06-24 | Canon Inc | Bonding wire inspection device |
| US5654588A (en) * | 1993-07-23 | 1997-08-05 | Motorola Inc. | Apparatus for performing wafer-level testing of integrated circuits where the wafer uses a segmented conductive top-layer bus structure |
| JP3044179B2 (en) * | 1995-04-25 | 2000-05-22 | 松下電工株式会社 | Strand recognition method |
| JP3832359B2 (en) * | 2002-03-01 | 2006-10-11 | 松下電器産業株式会社 | Electronic component pick-up method |
| JP4973332B2 (en) * | 2007-06-21 | 2012-07-11 | 株式会社サタケ | Nori appearance inspection equipment |
| CN101750038B (en) * | 2008-12-15 | 2012-06-20 | 中芯国际集成电路制造(上海)有限公司 | Test wafer for edge detection and wafer edge detection method |
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| CN102693426B (en) * | 2012-05-21 | 2014-01-08 | 清华大学深圳研究生院 | Method for detecting image salient regions |
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| CN106526443B (en) * | 2016-10-31 | 2019-05-31 | 广东利扬芯片测试股份有限公司 | A kind of silicon wafer built-in testing probe station |
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