CN108899394A - A kind of technique for enhancing single polycrystalline silicon battery plate surface passivation and improving open-circuit voltage - Google Patents
A kind of technique for enhancing single polycrystalline silicon battery plate surface passivation and improving open-circuit voltage Download PDFInfo
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- CN108899394A CN108899394A CN201810691296.4A CN201810691296A CN108899394A CN 108899394 A CN108899394 A CN 108899394A CN 201810691296 A CN201810691296 A CN 201810691296A CN 108899394 A CN108899394 A CN 108899394A
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 12
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 11
- 238000002161 passivation Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 88
- 239000010703 silicon Substances 0.000 claims abstract description 85
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims abstract description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 9
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 210000002268 wool Anatomy 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 8
- 239000010453 quartz Substances 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 12
- 238000002310 reflectometry Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000031700 light absorption Effects 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 230000000007 visual effect Effects 0.000 claims description 6
- 125000004437 phosphorous atom Chemical group 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910000632 Alusil Inorganic materials 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000002485 combustion reaction Methods 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- -1 and by certain time Chemical group 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000004094 surface-active agent Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract description 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of technique for enhancing single polycrystalline silicon battery plate surface passivation and improving open-circuit voltage, process flow steps are：Making herbs into wool → diffusion → etching → oxidation → PECVD → silk-screen printing → sintering → sorting → test；The present invention proposes a kind of technique for enhancing single polycrystalline silicon battery plate surface passivation effect and improving open-circuit voltage, at high temperature, it is passed through oxygen into Quartz stove tube and forms one layer of silicon dioxide layer with certain thickness, compactness and uniformity in silicon chip surface, this layer of oxide layer has good passivation to silicon chip surface, barrier metal ion is spread into silicon, limit the movement of charged carriers, the open-circuit voltage of silicon wafer improves 2~5mv, transfer efficiency is improved into 0.03-0.05%, improves the yield rate of single polycrystalline cell piece；Oxidation operation is mature simple, is easy to implement, can use existing diffusion furnace and be directly realized by, do not need the new equipment of extra purchase, single polycrystalline is general.
Description
Technical field：
The present invention relates to single polysilicon solar cell field more particularly to a kind of enhancing single polycrystalline silicon battery plate surface are blunt
Change the technique for improving open-circuit voltage.
Background technique
Photovoltaic cell technology is constantly brought forth new ideas, and high efficiency technical has tended to maturation and met enterprise's volume production needs, and single polycrystalline efficiency is not
Disconnected to be refreshed, how that the manufacturing process of cell piece is more optimized, developing higher transfer efficiency has been that each photovoltaic enterprise finishes
The raw target pursued, in the case where cost is without what difference, the higher transfer efficiency of same silicon wafer just represents higher
Interests return, therefore strong company constantly by the process route in laboratory by equipment improvement or technological innovation by its
Successful utilization obtains higher transfer efficiency into actual production process；The transfer efficiency for how improving silicon wafer, becomes
Insoluble technical problem for a long time.
In view of the foregoing, a kind of work for enhancing single polycrystalline silicon battery plate surface passivation and improving open-circuit voltage is now developed
Skill.
Summary of the invention
Purpose of the invention is to overcome the shortcomings in the prior art, provides a kind of enhancing single polycrystalline silicon battery plate surface
Passivation improves the technique of open-circuit voltage, improves the yield rate of single polycrystalline cell piece；Oxidation operation is mature simple, is easy to implement,
It can use existing diffusion furnace to be directly realized by, do not need the new equipment of extra purchase, single polycrystalline is general.
The present invention to achieve the goals above, adopts the following technical scheme that：A kind of enhancing single polycrystalline silicon battery plate surface is blunt
Change the technique for improving open-circuit voltage, process flow steps are：Making herbs into wool → diffusion → etching → oxidation → PECVD → silk-screen printing →
Sintering → sorting → test.
The first step：Making herbs into wool：Monocrystalline forms a layer texture structure in silicon wafer using sodium hydroxide, additive, is formed and falls into light
Effect increases the absorption of light, reduces surface reflectivity；Polycrystalline forms a layer texture structure in silicon wafer using nitric acid, hydrofluoric acid,
It is formed and falls into luminous effect, increase the absorption of light, reduce surface reflectivity, additive is water, isopropanol, sodium hydroxide, surface-active
The mixture of agent；
Second step：Diffusion：Silicon chip surface after making herbs into wool manufactures a PN junction；P-type wafer is put into the quartz of diffusion furnace
In container, phosphorus oxychloride is brought into quartz container using nitrogen at a high temperature of 800~900 DEG C, passes through phosphorus oxychloride and silicon wafer
Reacted to obtain phosphorus atoms, by certain time, phosphorus atoms enter the superficial layer of silicon wafer from surrounding, and by silicon atom it
Between gap spread to silicon wafer internal penetration, form N-type semiconductor, the interface of N-type semiconductor and P-type semiconductor is PN
Knot；
Third step：Etching：PN junction using nitric acid and hydrofluoric acid by diffusing procedure in silicon wafer surrounding and bottom removes, and makes silicon
The insulation of piece upper and lower surface, while removing the one layer of phosphorosilicate glass formed after diffusing procedure knot in silicon chip surface, the phosphorosilicate glass
The transfer efficiency of cell piece can be reduced in layer containing many impurity；
4th step：Oxidation：Silicon wafer after etching is placed in oxygen in diffusion furnace tube, is passed through at high temperature, oxygen is in silicon
Piece surface occurs chemical reaction and forms silicon dioxide layer；Temperature in diffusion furnace tube is：700~1200 DEG C, oxygen flow 1000
~2000sccm, 10000~20000sccm of nitrogen flow, time 1000s~2000s；
5th step：PECVD：So that the silicon wafer after oxidation is warming up to specified temperature using radio frequency glow discharge, then passes to
Reaction gas SiH4 and NH3 form silicon nitride film in silicon chip surface；The silicon nitride film can increase sunlight short-wave band light
Absorption, reduce surface reflectivity, improve short circuit current to improving transfer efficiency；
6th step：Silk-screen printing：Positive and negative two electrodes are made on silicon chip surface after PECVD, it will PN junction under light illumination
The electric current of generation exports；The process is printed by cell backside silver paste, the printing of cell backside aluminium paste and cell front side silver paste print three
Part forms；Slurry is penetrated using halftone visuals mesh, applies pressure at the slurry position of halftone with scraper, while towards net
The version other end is mobile, and slurry is expressed on silicon wafer from the mesh of visuals by scraper on the move, is formed in silicon chip surface
Figure；
7th step：Silicon wafer after silk-screen printing is sintered, by the organic compound combustion in the slurry of silicon chip surface figure
Fall, make back side aluminium paste, silver paste in conjunction with silicon crystal, front side silver paste forms silver-colored silicon alloy and alusil alloy, shape in conjunction with silicon crystal
At the Ohmic contact of upper/lower electrode, two key parameters of open-circuit voltage and fill factor of cell piece are improved, resistance is made it have
Characteristic, to improve the transfer efficiency of cell piece；
8th step：Sorting：Color classification will be carried out according to color standard film by sintered silicon wafer, according to color from being deep to
Shallowly, the silicon wafer of same color carries out unified testing package；
9th step：Test：By the silicon wafer after sorting be put into test equipment test, after test, according to the open-circuit voltage of silicon wafer,
Silicon wafer is carried out stepping placement according to efficiency by the parameters such as short circuit current, transfer efficiency.
The beneficial effects of the invention are as follows：The present invention proposes that a kind of single polycrystalline silicon battery plate surface passivation effect of enhancing improves and opens
The technique of road voltage is passed through oxygen into Quartz stove tube in silicon chip surface and forms one layer with certain thickness, densification at high temperature
The silicon dioxide layer of property and uniformity, this layer of oxide layer have a good passivation to silicon chip surface, barrier metal ion to
It is spread in silicon, limits the movement of charged carriers, the open-circuit voltage of silicon wafer improves 2~5mv, transfer efficiency is improved 0.03-
0.05%, improve the yield rate of single polycrystalline cell piece；Oxidation operation is mature simple, is easy to implement, can use existing expansion
Scattered furnace is directly realized by, and does not need the new equipment of extra purchase, and single polycrystalline is general.
Detailed description of the invention
The present invention will be further explained below with reference to the attached drawings：
Fig. 1 is process flow diagram.
Specific embodiment
Below with reference to embodiment, invention is further described in detail with specific embodiment：
Embodiment 1
The first step：Making herbs into wool：Monocrystalline forms a layer texture structure in silicon wafer using sodium hydroxide, additive, is formed and falls into light
Effect increases the absorption of light, reduces surface reflectivity；Polycrystalline forms a layer texture structure in silicon wafer using nitric acid, hydrofluoric acid,
It is formed and falls into luminous effect, increase the absorption of light, reduce surface reflectivity, additive is water, isopropanol, sodium hydroxide, surface-active
The mixture of agent；
Second step：Diffusion：Silicon chip surface after making herbs into wool manufactures a PN junction；P-type wafer is put into the quartz of diffusion furnace
In container, phosphorus oxychloride is brought into quartz container using nitrogen at a high temperature of 850 DEG C, is carried out by phosphorus oxychloride and silicon wafer anti-
Phosphorus atoms should be obtained, by certain time, phosphorus atoms enter the superficial layer of silicon wafer from surrounding, and pass through the sky between silicon atom
Gap is spread to silicon wafer internal penetration, forms N-type semiconductor, and the interface of N-type semiconductor and P-type semiconductor is PN junction；
Third step：Etching：PN junction using nitric acid and hydrofluoric acid by diffusing procedure in silicon wafer surrounding and bottom removes, and makes silicon
The insulation of piece upper and lower surface, while removing the one layer of phosphorosilicate glass formed after diffusing procedure knot in silicon chip surface, the phosphorosilicate glass
The transfer efficiency of cell piece can be reduced in layer containing many impurity；
4th step：Oxidation：Silicon wafer after etching is placed in oxygen in diffusion furnace tube, is passed through at high temperature, oxygen is in silicon
Piece surface occurs chemical reaction and forms silicon dioxide layer；Temperature in diffusion furnace tube is：1000 DEG C, oxygen flow 1500sccm,
Nitrogen flow 20000sccm, time 2000s；
5th step：PECVD：So that the silicon wafer after oxidation is warming up to specified temperature using radio frequency glow discharge, then passes to
Reaction gas SiH4 and NH3 form silicon nitride film in silicon chip surface；The silicon nitride film can increase sunlight short-wave band light
Absorption, reduce surface reflectivity, improve short circuit current to improving transfer efficiency；
6th step：Silk-screen printing：Positive and negative two electrodes are made on silicon chip surface after PECVD, it will PN junction under light illumination
The electric current of generation exports；The process is printed by cell backside silver paste, the printing of cell backside aluminium paste and cell front side silver paste print three
Part forms；Slurry is penetrated using halftone visuals mesh, applies pressure at the slurry position of halftone with scraper, while towards net
The version other end is mobile, and slurry is expressed on silicon wafer from the mesh of visuals by scraper on the move, is formed in silicon chip surface
Figure；
7th step：Silicon wafer after silk-screen printing is sintered, by the organic compound combustion in the slurry of silicon chip surface figure
Fall, make back side aluminium paste, silver paste in conjunction with silicon crystal, front side silver paste forms silver-colored silicon alloy and alusil alloy, shape in conjunction with silicon crystal
At the Ohmic contact of upper/lower electrode, two key parameters of open-circuit voltage and fill factor of cell piece are improved, resistance is made it have
Characteristic, to improve the transfer efficiency of cell piece；
8th step：Sorting：Color classification will be carried out according to color standard film by sintered silicon wafer, according to color from being deep to
Shallowly, the silicon wafer of same color carries out unified testing package；
9th step：Test：By the silicon wafer after sorting be put into test equipment test, after test, according to the open-circuit voltage of silicon wafer,
Silicon wafer is carried out stepping placement according to efficiency by the parameters such as short circuit current, transfer efficiency.
Claims (2)
1. a kind of technique for enhancing single polycrystalline silicon battery plate surface passivation and improving open-circuit voltage, it is characterised in that：Process flow step
Suddenly it is：Making herbs into wool → diffusion → etching → oxidation → PECVD → silk-screen printing → sintering → sorting → test.
2. a kind of technique for enhancing single polycrystalline silicon battery plate surface passivation and improving open-circuit voltage according to claim 1,
It is characterized in that：
The first step：Making herbs into wool：Monocrystalline forms a layer texture structure in silicon wafer using sodium hydroxide, additive, is formed and falls into luminous effect,
Increase the absorption of light, reduces surface reflectivity；Polycrystalline forms a layer texture structure in silicon wafer using nitric acid, hydrofluoric acid, is formed
Luminous effect is fallen into, the absorption of light is increased, reduces surface reflectivity, additive is water, isopropanol, sodium hydroxide, surfactant
Mixture；
Second step：Diffusion：Silicon chip surface after making herbs into wool manufactures a PN junction；P-type wafer is put into the quartz container of diffusion furnace
It is interior, phosphorus oxychloride is brought into quartz container using nitrogen at a high temperature of 800~900 DEG C, is carried out by phosphorus oxychloride and silicon wafer
Reaction obtains phosphorus atoms, and by certain time, phosphorus atoms enter the superficial layer of silicon wafer from surrounding, and by between silicon atom
Gap is spread to silicon wafer internal penetration, forms N-type semiconductor, and the interface of N-type semiconductor and P-type semiconductor is PN junction；
Third step：Etching：PN junction using nitric acid and hydrofluoric acid by diffusing procedure in silicon wafer surrounding and bottom removes, and makes on silicon wafer
Lower surface insulation, while the one layer of phosphorosilicate glass formed after diffusing procedure knot in silicon chip surface is removed, in the phosphorosilicate glass layer
The transfer efficiency of cell piece can be reduced containing many impurity；
4th step：Oxidation：Silicon wafer after etching is placed in oxygen in diffusion furnace tube, is passed through at high temperature, oxygen is in silicon wafer table
Face occurs chemical reaction and forms silicon dioxide layer；Temperature in diffusion furnace tube is：700~1200 DEG C, oxygen flow 1000~
2000sccm, 10000~20000sccm of nitrogen flow, time 1000s~2000s；
5th step：PECVD：So that the silicon wafer after oxidation is warming up to specified temperature using radio frequency glow discharge, then passes to reaction
Gas SiH4 and NH3 form silicon nitride film in silicon chip surface；The silicon nitride film can increase the suction of sunlight short-wave band light
It receives, reduces surface reflectivity, improve short circuit current to improve transfer efficiency；
6th step：Silk-screen printing：Positive and negative two electrodes are made on silicon chip surface after PECVD, PN junction will be generated under light illumination
Electric current export；The process is printed by cell backside silver paste, three parts are printed in the printing of cell backside aluminium paste and cell front side silver paste
Composition；Slurry is penetrated using halftone visuals mesh, applies pressure at the slurry position of halftone with scraper, while another towards halftone
One end is mobile, and slurry is expressed on silicon wafer from the mesh of visuals by scraper on the move, forms figure in silicon chip surface；
7th step：Silicon wafer after silk-screen printing is sintered, the organic compound combustion in the slurry of silicon chip surface figure is fallen, is made
Back side aluminium paste, silver paste are in conjunction with silicon crystal, and front side silver paste is in conjunction with silicon crystal, the silver-colored silicon alloy of formation and alusil alloy, in formation
The Ohmic contact of lower electrode improves two key parameters of open-circuit voltage and fill factor of cell piece, makes it have resistance characteristic,
To improve the transfer efficiency of cell piece；
8th step：Sorting：Color classification will be carried out according to color standard film by sintered silicon wafer, it is shallow from being deep to according to color,
The silicon wafer of same color carries out unified testing package；
9th step：Test：Silicon wafer after sorting is put into test equipment test, after test, according to the open-circuit voltage of silicon wafer, short circuit
Silicon wafer is carried out stepping placement according to efficiency by the parameters such as electric current, transfer efficiency.
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| CN109360802A (en) * | 2018-12-13 | 2019-02-19 | 杭州海莱德智能科技有限公司 | A kind of flush system disperser |
| CN112768566A (en) * | 2021-02-01 | 2021-05-07 | 上海理工大学 | Photocell preparation method based on molybdenum disulfide as carrier |
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Application publication date: 20181127 |