CN108878664A - Light emitting diode with quantum dots and the preparation method and application thereof - Google Patents
Light emitting diode with quantum dots and the preparation method and application thereof Download PDFInfo
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H10K50/00—Organic light-emitting devices
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- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
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Abstract
The invention discloses a kind of light emitting diode with quantum dots and the preparation method and application thereof.Hole-injecting material of the present invention is that Nb adulterates MoS2The MoS of formation2:Nb material.Light emitting diode with quantum dots of the present invention includes anode layer and cathode layer, and stacking is incorporated in hole injection layer and quantum dot light emitting layer between anode layer and cathode layer, and the hole injection layer, in conjunction with the anode layer stackup, the quantum dot light emitting layer stackup is incorporated between hole injection layer and cathode layer.Wherein, the material of hole injection layer is that Nb adulterates MoS2The MoS of formation2:Nb material.Light emitting diode with quantum dots of the present invention is with MoS2:Nb material is as hole injection layer material, in such manner, it is possible to the Hole injection capacity of light emitting diode with quantum dots is significantly improved, so that carrier balance in luminescent layer, and concentration is high, has excellent optical property from light emitting diode with quantum dots is assigned.
Description
Technical field
The invention belongs to field of display technology, and in particular to a kind of light emitting diode with quantum dots and preparation method thereof and display
Device or solid-state lighting lamp.
Background technique
In recent years, it with the fast development of display technology, is sent out using semiconductor-quantum-point material as the quantum dot of luminescent layer
Optical diode (QLED) has received widespread attention.Quantum dot has since its photochromic purity is high, luminous quantum efficiency are high, luminous
The advantages that Color tunable, high quantum yield, in addition being prepared using printing technology, so the light emitting diode based on quantum dot
(i.e. light emitting diode with quantum dots：QLED) recently by the common concern of people, device performance index is also quickly grown.
But since the energy level of quanta point material is deeper, ionization potential is larger, and existing hole transmission layer and quantum dot is caused to be sent out
There are still biggish hole injection barrier between photosphere, cause anode more difficult to the injection of the hole of luminescent layer, and hole
Injection efficiency is generally relatively low compared to electron injection efficiency, causes the carrier in QLED luminescent layer to inject uneven, thus seriously
Limit the performance of QLED device.
In order to improve the injection efficiency in hole, someone attempts to improve hole using two-dimensional layer nano material (2D) at present
Injectability.This is because having found that the two-dimensional layer nano material (2D) includes graphene and molybdenum disulfide (MoS2) etc. have
Novel layer structure and unique electricity and optical property, and cause academia and widely pay close attention to.Two-dimensional layer
Molybdenum disulfide is a kind of N-type semiconductor material, carrier mobility with higher and good electric conductivity, and especially it can
With according to the number of plies of its nanometer sheet, and then regulate and control its band gap, so that two-dimensional layer molybdenum disulfide material is in the opto-electronic device
Using with very wide prospect.But in electroluminescent device, MoS2It is multi-purpose to do hole-injecting material, but its hole
Injectability is not satisfactory yet.
Therefore, two-dimensional layer MoS how is made full use of2Excellent properties, improve its hole mobility and its in QLED device
Hole injection capacity in part, so that the carrier in active balance luminescent layer is realized, for improving the optical of QLED device
It can be that the current industry wishes always the technical issues of solving.
Summary of the invention
It is an object of the invention to overcome the above-mentioned deficiency of the prior art, a kind of light emitting diode with quantum dots and its system are provided
Preparation Method and its application are injected caused by imbalance with solving the carrier in existing light emitting diode with quantum dots in luminescent layer
The undesirable technical problem of optical property.
In order to achieve the above-mentioned object of the invention, one aspect of the present invention provides a kind of light emitting diode with quantum dots.The quantum
Point luminescent diode includes anode layer and cathode layer, and stacking be incorporated in hole injection layer between anode layer and cathode layer and
Quantum dot light emitting layer, and the hole injection layer, in conjunction with the anode layer stackup, the quantum dot light emitting layer stackup is incorporated in
Between hole injection layer and cathode layer, wherein the hole injection layer material is MoS2:Nb material.
Another aspect of the invention provides a kind of preparation method of light emitting diode with quantum dots of the present invention.The preparation side
Method includes the following steps：
In the step of anode surface prepares hole injection layer, and hole injection layer material is MoS2:Nb material.
Another aspect of the invention provides a kind of display device or solid-state lighting lamp.The display device or solid-state are shone
Bright lamp tool contains light emitting diode with quantum dots of the present invention or the light emitting diode with quantum dots prepared by preparation method of the present invention.
Compared with prior art, light emitting diode with quantum dots of the present invention is due to using MoS2:Nb material is injected as hole
There is high hole to inject energy for layer material, therefore, light emitting diode with quantum dots of the present invention, so that carrier is flat in luminescent layer
Weighing apparatus, and concentration is high, to have excellent optical property.
The preparation method of light emitting diode with quantum dots of the present invention uses MoS2:Nb material is direct as hole injection layer material
Hole injection layer is prepared in anode surface, so that the light emitting diode with quantum dots of preparation has high hole injection energy and height
Luminous efficiency.In addition, preparation method process conditions are easily-controllable, the high luminous efficiency of high light emitting diode with quantum dots ensure that
Stability.
The invention shows devices or solid-state lighting lamp due to containing light emitting diode with quantum dots of the present invention, light
Excitation purity is high, luminous efficiency is high, and display effect is good, and brightness is high.
Detailed description of the invention
Fig. 1 is that light emitting diode with quantum dots of the embodiment of the present invention includes anode/hole injection/hole transport/quantum dot/electricity
The structural schematic diagram of sub- transmission/cathode；
Fig. 2 is that light emitting diode with quantum dots of the embodiment of the present invention includes anode/hole injection/hole transport/quantum dot/electricity
Sub- transmission/electron injection/cathode structural schematic diagram；
Fig. 3 is the flow diagram of light emitting diode with quantum dots preparation method of the embodiment of the present invention.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
(1) hole-injecting material
On the one hand, the embodiment of the present invention provides a kind of hole-injecting material that can effectively improve Hole injection capacity.It is described
Hole-injecting material is MoS2:Nb material.Wherein, doping refers to that Nb element portions substitute MoS2In Mo element, formation
MoS2:Nb material, that is to say MoS2:That Nb material indicates is Nb doping MoS2The composite material of formation.Therefore, in MoS2:Nb material
In material, since Nb is instead of part Mo, and the d electronic shell of Nb has lacked an electronics compared with Mo, and the Nb adulterated in this way is played
The effect of electron acceptor, so that assigning MoS2:Nb shows the property of P-type semiconductor.Therefore, by above-mentioned MoS2:The injection of the hole Nb
Hole injection layer of the material as electroluminescent device, with individual MoS2It compares, enhances the hole note of photo luminescent devices
Enter ability.Due to the raising of Hole injection capacity, so that the balance and concentration of carrier in quantum dot light emitting layer are enhanced, thus
Improve the luminous efficiency of light emitting diode with quantum dots.
In one embodiment, above-mentioned MoS is controlled2:The molar ratio of Mo and Nb in Nb hole-injecting material are 1:(0.001-
0.01).The amount that Mo is substituted by control Nb, that is to say control Nb and Mo femtomole ratio, improves above-mentioned MoS2:The injection of the hole Nb
The effect of the electron acceptor of material, to improve above-mentioned MoS2:The Hole injection capacity of Nb hole-injecting material, to realize
The balance and concentration of carrier in light emitting diode with quantum dots luminescent layer achieve the purpose that improve luminous efficiency.
In one embodiment, above-mentioned MoS2:Nb hole-injecting material can be prepared conventionally.
(2) light emitting diode with quantum dots
On the other hand, the embodiment of the invention provides a kind of light emitting diode with quantum dots.Quantum dot of embodiment of the present invention hair
The structure of optical diode can be conventional light emitting diode with quantum dots, unlike regular quantum point luminescent diode, this
Hole-injecting material contained by inventive embodiments light emitting diode with quantum dots is MoS described in first segment above2:The hole of Nb
Injection material.In order to cooperate MoS2:The hole-injecting material of Nb improves the hair of light emitting diode with quantum dots of the embodiment of the present invention
Light efficiency.Light emitting diode with quantum dots of the embodiment of the present invention can be the structure as shown in attached drawing 1-2.
As one embodiment of the invention, the structure of above-mentioned light emitting diode with quantum dots is as shown in Figure 1.It includes anode layer
1 and cathode layer 7, and stacking is incorporated in hole injection layer 2, hole transmission layer 3 and quantum between anode layer 1 and cathode layer 7
Point luminescent layer 4 and electron transfer layer 5, and from anode layer 1 to 7 direction of cathode layer, the anode layer 1, hole injection layer 2, hole
Transmitting layer 3, quantum dot light emitting layer 4, electron transfer layer 5, cathode layer 7 stack gradually combination.
In another embodiment, above-mentioned light emitting diode with quantum dots further includes in institute on the basis of structure as shown in Figure 1
It states also to be laminated between cathode layer 7 and electron transfer layer 5 and is combined with electron injecting layer 6.Wherein, 5 He of electron transfer layer is existed simultaneously
The light emitting diode with quantum dots structure of 6 layers of structure of electron injecting layer is as shown in Figure 2.
Certainly, electron transfer layer 5, electron injecting layer 6 contained by above-mentioned light emitting diode with quantum dots shown in Fig. 2 can also be with
Optional one layer of structure such as contains only the light emitting diode with quantum dots of electron transfer layer 5 or contains only the quantum of electron injecting layer 6
Point luminescent diode.
In addition, further including for carrying two pole of the various embodiments described above quantum dot light emitting on the basis of the various embodiments described above
The substrate of pipe, as the substrate can be in conjunction on the outer surface of anode layer 1.
Specifically, anode layer 1 contained by light emitting diode with quantum dots described in the various embodiments described above can be convention amount
The anode material of sub- point luminescent diode is formed by anode layer.In one embodiment, can be selected from can for the material of the anode layer 1
Light-exposed area's transparent conductive material, the visible region transparent conductive material can be but be not limited to indium tin oxide target (ITO), indium oxide
Zinc (IZO) etc., preferred visible region transparent conductive material are ITO.As in one embodiment, which be can be
When ito substrate, then hole injection layer 2 is just deposited on the ITO conductive layer of ito substrate.In addition, in order to improve above-mentioned quantum
The light extraction efficiency of point luminescent diode and provide heat dissipation effect, the substrate that anode layer 1 and anode layer 1 combine be it is transparent, with
Improve light emission rate.In one embodiment, the anode layer 1 is with a thickness of 20-120nm.
2 material of hole injection layer contained by above-mentioned light emitting diode with quantum dots is MoS described above2:The injection of the hole Nb
Material.As described above, the MoS2:Nb hole-injecting material shows the property of P-type semiconductor, after being combined with anode layer 2,
It is capable of providing the ability of anode hole injection, is injected into the hole concentration in quantum dot light emitting layer 4 to improve from anode, thus
Carrier in active balance luminescent layer achievees the purpose that improve luminous efficiency.In one embodiment, the hole injection layer 2
Thickness control is 10-100nm.By optimizing the thickness of hole injection layer 2, hole injection is improved to cooperate other layer of structure
Ability, to improve the luminous efficiency of above-mentioned light emitting diode with quantum dots.
3 material selection of hole transmission layer contained by above-mentioned light emitting diode with quantum dots but not just for poly- (9,9- dioctyl
Fluorenes-CO-N- (4- butyl phenyl) diphenylamines) (TFB), polyvinylcarbazole (PVK), poly- (N, N' bis- (4- butyl phenyl)-N, N'-
Bis- (phenyl) benzidine) (poly-TPD), poly- (double-N of 9,9- dioctyl fluorene -co-, N- phenyl -1,4- phenylenediamine) (PFB), 4,
4', 4 "-three (carbazole -9- base) triphenylamines (TCTA), 4,4'- bis- (9- carbazole) biphenyl (CBP), N, N'- diphenyl-N, N'- bis-
(3- aminomethyl phenyl)-1,1'- biphenyl-4,4'- diamines (TPD), N, N'- diphenyl-N, N'- (1- naphthalene) biphenyl-4-1,1'-,
At least one of 4'- diamines (NPB), doped graphene, undoped graphene, C60.In one embodiment, the hole passes
Defeated layer 3 with a thickness of 1-100nm.By cooperating hole injection layer 2, passing through to 3 material category of hole transmission layer and thickness control
The synergistic effect of the two improves anode layer injected holes efficiency of transmission, enters in quantum luminescent layer 4 to improve hole
Amount, with the concentration for improving hole Yu electronically forming exciton, improves the luminous efficiency of above-mentioned light emitting diode with quantum dots.
Quantum luminescent layer 4 contained by above-mentioned light emitting diode with quantum dots can be in the excitation in hole and the exciton electronically formed
Under so that in quantum luminescent layer 4 quantum dot light emitting material carry out it is luminous.Therefore, can exciton excitation under carry out it is luminous
Quantum dot light emitting material and 4 general thickness of quantum luminescent layer are in range disclosed by the invention.In one embodiment, above-mentioned quantum
4 material of luminescent layer can be at least one of red quantum dot, green quantum dot or blue quantum dot, it is, of course, also possible to be
Other red quantum dot materials.In another embodiment, the quantum dot light emitting layer is with a thickness of 10-60nm.Select such quantum
Point luminescent material and the thickness of the range can have high luminous efficiency under the excitation of exciton.
It 5 material selection of electron transfer layer contained by above-mentioned light emitting diode with quantum dots but is not limited to doped or non-doped
ZnO、TiO2、WO3、NiO、MoO3、Fe2O3、SnO2、Ta2O3, one of AlZnO, ZnSnO, InSnO or a variety of.Preferably, institute
The material for stating electron transfer layer 5 is the N-shaped ZnO with high electronic transmission performance.The electron transfer layer with a thickness of but not
It is limited to 30-60nm.By the control to electron transfer layer 5 material and thickness, improve by the 7 injected electrons amount of being transmitted to of cathode layer
Efficiency in sub- luminescent layer 4.To improve the concentration of electronics in quantum luminescent layer 4, finally to improve above-mentioned quantum dot light emitting two
The luminous efficiency of pole pipe.
6 material selection of electron injecting layer contained by above-mentioned light emitting diode with quantum dots but be not limited to Ca, Ba, CsF, LiF,
CsCO3At least one of.The electron injecting layer 6 with a thickness of 30-60nm.By to 6 material of electron injecting layer and thickness
Control, improve by cathode layer 7 inject electronics ability, so that the concentration of electronics in quantum luminescent layer 4 is improved, finally to improve
The luminous efficiency of above-mentioned light emitting diode with quantum dots.
Cathode layer 7 contained by above-mentioned light emitting diode with quantum dots can be the cathode material of regular quantum point luminescent diode
Be formed by cathode layer, in one embodiment, the material of the cathode layer 7 can be one of Al, Ag, Cu, Mo, Au or it
Alloy, preferably Al.In another embodiment, the anode layer 7 is with a thickness of 60-120nm.
Light emitting diode with quantum dots in the various embodiments described above can be prepared according to attached step shown in Fig. 3, simultaneously
Referring to Fig. 1 and 2, the light emitting diode with quantum dots in specific the various embodiments described above is prepared as follows：
S01., anode grid substrate is provided, and anode grid substrate is pre-processed.Specifically, anode grid substrate material quantum for example above
Anode layer 1 contained by point luminescent diode.In order to improve the adhesive force and work function of anode grid substrate, in an embodiment, to anode
The pretreatment of substrate can be oxygen gas plasma processing, further to remove the organic matter of the surface ITO attachment and improve ITO's
UV-ozone processing can also be used to complete in work function, this process.
S02：The hole injection layer as contained by light emitting diode with quantum dots above is deposited on 1 surface of conductive layer of anode grid substrate
2, thickness and material are as described in light emitting diode with quantum dots above, and details are not described herein.Deposit MoS2:The injection of the hole Nb
Layer 2 can be prepared using chemical deposition.
S03：It is sequentially depositing as contained by hole transmission layer 3 above, light emitting diode with quantum dots in 2 outer surface of hole injection layer
Quantum dot light emitting layer 4.Its thickness and material are as described in light emitting diode with quantum dots above, and details are not described herein.Deposition
Hole transmission layer 3, quantum dot light emitting layer 4 can use but be not limited to chemical deposition preparation.
S04：In 4 outside deposition of quantum dot light emitting layer cathode layer 7 as contained by light emitting diode with quantum dots above.It is thick
Degree and material are as described in light emitting diode with quantum dots above, and details are not described herein.Cathode layer 7 can use but being not limited to
Learn the modes such as sedimentation preparation or vapor deposition.
In another embodiment, when light emitting diode with quantum dots contains electron transfer layer 5 and electronics note as shown in Figure 1, 2
It further include being sequentially depositing electron transfer layer 5 in 4 outer surface of quantum dot light emitting layer between above-mentioned steps S03 and S04 when entering layer 6
The step of with electron injecting layer 6.The thickness and material of electron transfer layer 5 and electron injecting layer 6 are deposited as quantum dot above is sent out
Described in optical diode, details are not described herein.Deposition electron transfer layer 5 and electron injecting layer 6 can use but be not limited to chemistry
Sedimentation preparation.
In addition, if above-mentioned light emitting diode with quantum dots contains only any layer in electron transfer layer 5 and electron injecting layer 6
Structure, then only being included in 4 outer surface of quantum dot light emitting layer between above-mentioned steps S03 and S04 and being sequentially depositing electron transfer layer
5 or the step of electron injecting layer 6.
Therefore, based on described above, above-mentioned light emitting diode with quantum dots is using hole-injecting material system described above
Make hole injection layer 2, in this way, on state clearly light emitting diode with quantum dots have high hole injection can, and in other function layer
Under synergistic effect, realizes carrier balance and concentration in quantum dot light emitting layer 4, improve the hair of above-mentioned light emitting diode with quantum dots
Light efficiency, to assign its excellent optical property.In addition, above-mentioned light emitting diode with quantum dots preparation method technical maturity, has
Effect ensure that the stability for preparing each layer structural behaviour, to ensure that the high-luminous-efficiency of above-mentioned light emitting diode with quantum dots is special
Property, while reducing production cost.
(2) application of light emitting diode with quantum dots
There is high Hole injection capacity based on light emitting diode with quantum dots described above, be transmitted to quantum dot light emitting layer
Carrier balance and concentration in 4 is high, has high luminous efficiency.Therefore, light emitting diode with quantum dots described above can
It is applied to display device or solid-state lighting lamp field, to improve display or the luminescent properties of corresponding device.As a result,
The embodiment of the present invention provides a kind of display device or solid-state lighting lamp on the basis of light emitting diode with quantum dots above.
Wherein, display device or solid-state lighting lamp are respectively provided with its corresponding necessary component, include above in necessary component
The light emitting diode with quantum dots.In this way, the photochromic purity is high of display screen of the embodiment of the present invention or solid-state lighting lamp, luminous
High-efficient, display effect is good, and brightness is high.
Now in conjunction with specific example, the present invention will be described in further detail.
Embodiment 1
The present embodiment light emitting diode with quantum dots comprising stack gradually ito anode layer/MoS of combination2:The hole Nb note
Enter layer/TFB hole transmission layer/quantum dot light emitting layer/N-shaped zinc oxide electronic transmission performance/aluminium cathode layer.Wherein, MoS2:Nb is empty
The molar ratio of Mo and Nb in hole injection material are 1:0.005, with a thickness of 30nm；TFB hole transmission layer with a thickness of 30nm；
Quantum dot light emitting layer material is red quantum dot luminescent material；It is with a thickness of 20nm；N-shaped zinc oxide electronic transmission performance
30nm；The 100nm of aluminium cathode layer.
The present embodiment light emitting diode with quantum dots is prepared as follows：
S11：The ito substrate that will be patterned into is placed in acetone in order, washing lotion, and ultrasound is carried out in deionized water and isopropanol
Cleaning, each of the above step ultrasound are both needed to lasting 15 minutes or so.ITO is placed in cleaning oven after the completion of the ultrasound dry it is standby
With；After ito substrate drying, the surface ITO is handled 5 minutes further to remove the organic matter of the surface ITO attachment with UV-ozone
And improve the work function of ITO；
S12：One layer of MoS of chemical vapor deposition is used on processed ito substrate surface2:Nb material, as sky
Cave implanted layer, this thickness degree 30nm；
S13：MoS will be deposited with2:The substrate of Nb is placed in nitrogen atmosphere, deposits one layer of hole transport layer material TFB,
This layer with a thickness of 30nm, and substrate is placed on 150 DEG C of warm table and heats 30 minutes to remove solvent；
S14：After piece of S13 processing is cooling, it is by material？Quantum dot light emitting material be deposited on hole transmission layer table
Face forms quantum dot light emitting layer, with a thickness of 20nm；Piece is placed on 80 DEG C of warm table after the completion of deposition and heats 10 points
Clock removes remaining solvent；
S15：Depositing n-type zinc oxide electron transfer layer outside quantum dot light emitting layer is being formed, with a thickness of 30nm.
S16：Piece for having deposited each functional layer is placed in vapor deposition storehouse and is steamed by mask plate heat in electron-transport layer surface
The aluminium of one layer of 100nm is plated as cathode layer.
Comparative example 1
Two pole of quantum dot light emitting that the light emitting diode with quantum dots structure that this comparative example provides is provided such as above-described embodiment 1
Pipe, the difference is that, hole injection layer material contained by this comparative example light emitting diode with quantum dots is not doped
MoS2。
The light emitting diode with quantum dots that embodiment 1 and comparative example 1 provide is subjected to current efficiency, brightness, Qi Liang electricity respectively
The performance tests such as pressure.Test result is as follows shown in table 1.
Table 1
By test result in table 1 it is found that light emitting diode with quantum dots provided in an embodiment of the present invention has luminescent properties bright
The aobvious light emitting diode with quantum dots provided better than comparative example.Thus MoS provided in an embodiment of the present invention is illustrated2:The hole Nb note
Anode hole injectability can be effectively improved by entering material, to improve light emitting diode with quantum dots such as light emission luminance and efficiency etc.
Issue performance.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of light emitting diode with quantum dots, it is characterised in that：Anode layer is incorporated in including anode layer and cathode layer, and stacking
Hole injection layer and quantum dot light emitting layer between cathode layer, and the hole injection layer is in conjunction with the anode layer stackup,
The quantum dot light emitting layer stackup is incorporated between hole injection layer and cathode layer, wherein the hole injection layer material is
MoS2:Nb material.
2. light emitting diode with quantum dots according to claim 1, it is characterised in that：The hole injection layer with a thickness of
10-100nm。
3. light emitting diode with quantum dots according to claim 1, it is characterised in that：The MoS2:Mo's and Nb in Nb rubs
You are than being 1:(0.001-0.01).
4. light emitting diode with quantum dots according to claim 1 to 3, it is characterised in that：The hole injection layer with
Also stacking is combined with hole transmission layer between quantum dot light emitting layer；And/or
Also stacking is combined with electron transfer layer and/or electron injecting layer between the cathode layer and quantum dot light emitting layer, wherein
The electron injecting layer is in conjunction with the cathode layer stackup.
5. light emitting diode with quantum dots according to claim 4, it is characterised in that：The material of the hole transmission layer is poly-
(9,9- dioctyl fluorene-CO-N- (4- butyl phenyl) diphenylamines), polyvinylcarbazole, poly- (N, N' bis- (4- butyl phenyl)-N, N'-
Bis- (phenyl) benzidine), poly- (double-N of 9,9- dioctyl fluorene -co-, N- phenyl -1,4- phenylenediamine), 4,4', 4 "-three (carbazole -9-
Base) triphenylamine, 4,4'- bis- (9- carbazole) biphenyl, N, (3- the aminomethyl phenyl) -1,1'- biphenyl of N'- diphenyl-N, N'- bis- -4,4'-
Diamines, N, N'- diphenyl-N, N'- (1- naphthalene) -1,1'- biphenyl -4,4'- diamines, doped graphene, undoped graphene,
One of C60 or a variety of；And/or
The electron transfer layer is ZnO, TiO2、WO3、NiO、MoO3、Fe2O3、SnO2、Ta2O3, in AlZnO, ZnSnO, InSnO
It is one or more；And/or
The electron injecting layer material is Ca, Ba, CsF, LiF, CsCO3At least one of.
6. light emitting diode with quantum dots according to claim 4 or 5, it is characterised in that：The thickness of the hole transmission layer
For 1-100nm；And/or
The electron transfer layer is preferably with a thickness of 30-60nm；And/or
The electron injecting layer with a thickness of 30-60nm.
7. -3,5 any light emitting diode with quantum dots according to claim 1, it is characterised in that：The material containing anode
Material is any one of indium tin oxide target, indium zinc oxide, and the anode layer thickness is 20-120nm；And/or
The material of the cathode is one of Al, Ag, Cu, Mo, Au or their alloy, the cathode preferably with a thickness of
60-120nm；And/or
The quantum dot light emitting layer with a thickness of 10-60nm.
8. a kind of preparation method of light emitting diode with quantum dots, which is characterized in that include the following steps：
In the step of anode surface prepares hole injection layer, and hole injection layer material is MoS2:Nb material.
9. preparation method according to claim 8, it is characterised in that：Preparing hole injection layer in anode surface is using change
Learn sedimentation preparation；And/or
The hole injection layer of preparation is with a thickness of 10-100nm.
10. a kind of display device or solid-state lighting lamp, it is characterised in that：The display device or solid-state lighting lamp, which contain, has the right
Benefit requires any light emitting diode with quantum dots of 1-7 or the quantum by any preparation method preparation of claim 8-9
Point luminescent diode.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110614863A (en) * | 2019-09-06 | 2019-12-27 | 华南理工大学 | Method for realizing uniform pattern array of ink-jet printing |
| CN113036043A (en) * | 2019-12-24 | 2021-06-25 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
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