CN103311440A - Layered semiconductor material used for organic solar cell hole transport layer and preparation method of layered semiconductor material - Google Patents

Layered semiconductor material used for organic solar cell hole transport layer and preparation method of layered semiconductor material Download PDF

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CN103311440A
CN103311440A CN2013102266236A CN201310226623A CN103311440A CN 103311440 A CN103311440 A CN 103311440A CN 2013102266236 A CN2013102266236 A CN 2013102266236A CN 201310226623 A CN201310226623 A CN 201310226623A CN 103311440 A CN103311440 A CN 103311440A
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preparation
active layer
organic solar
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孙宝全
顾星
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Suzhou Fangsheng Optoelectronics Equipment & Technology Co Ltd
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Suzhou Fangsheng Optoelectronics Equipment & Technology Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/549—Organic PV cells

Abstract

The invention provides a layered nano material and a preparation method thereof, and an organic solar cell containing the layered nano material and a preparation method of the organic solar cell. A general formula of the layered nano meter is shown as follows: MX2, wherein M refers to one of Mo, W, Nb, Ta, Ti and Zr, and X refers to S or Se. Transition metal disulphides or di-stannide like molybdenum disulfide and niobium di-stannide which belong to the layed material are applied to the solar cell, so that excellent electrical performance of the layered materials is fully utilized; compared with other materials, defect states only exist in a layered boundary, so that defects are fewer, and advantages exceeding the other materials are demonstrated. A solution ball-milling method is adopted for preparation, so that the preparation method is simple and meets requirements of large-scale manufacturing and application better; after the hole transport layer is formed, effect of hole transport and electron blocking is brought into play well, effect of a device is far better than devices without buffering layers, and performance of the device is basically at a same level with that of a device with a thermally-evaporated molybdenum oxide buffering layer.

Description

A kind of layered semiconductor material for the organic solar batteries hole transmission layer and preparation method thereof
Technical field
The present invention relates to the solar-photovoltaic technology field, be specifically related to a kind of layered semiconductor material for the organic solar batteries hole transmission layer and preparation method thereof.
Background technology
In 50 years of future, in the ten large problems of facing mankind, energy problem ranks the first, and solar energy then is one of following most promising energy, and solar cell is exactly a kind of device that solar energy is changed into electric energy.In present solar energy market, monocrystalline silicon, polysilicon and the inorganic solar cell such as amorphous silicon and cadmium telluride account for leading, but its complex process and very harsh to the requirement of material, so organic photoelectrical material arises at the historic moment.Compare with traditional photoelectric material, organic photoelectrical material be easy to area integrated, can be produced on the advantages such as flexible substrates, device making technics be simple, with low cost, can also adjust electronic band gap, and production process is nuisanceless, along with going deep into of research, the energy conversion efficiency of film organic photovoltaic cell is stably rising always, and improve rapidly recent years especially.
These significant raisings are because the improvement of the synthetic and method of purification of new material on the one hand; Because the progressively optimization of device architecture on the other hand.In the optimised devices configuration aspects, people mainly improve device performance by increasing, optimize the buffer electrode layer and preparing laminated device.Resilient coating can improve battery efficiency effectively, plays and reduces the photoproduction exciton in the cancellation rate at organic layer and cathode interface place, makes the photoproduction exciton can be separated into more fully electronics and hole, thereby improves the photoelectric conversion efficiency of organic solar batteries.In organic optoelectronic device, the most frequently used anode buffer layer material is PEDOT:PSS, but PEDOT:PSS generally adopts spin-coating film, and PEDOT:PSS solution has faintly acid, can produce the unsteadiness that reaction cause device with the ITO electrode; In addition, PEDOT:PSS has stronger moisture pick-up properties, and great changes will take place for level structure after it absorbs moisture, can cause the decline of battery performance.In recent years, transparent metal oxide V 2O 5, WO 3And MoO 3Deng progressively being applied in the organic solar batteries device, they can be by the several different methods such as hot evaporation, electron beam evaporation, sputter deposition film forming, but these method costs are higher, are not easy to extensive preparation.
Summary of the invention
In view of this, the invention provides a kind of stable performance, lower-cost stratified nano materials, and preparation method thereof, and comprise organic solar batteries of layered nano material and preparation method thereof.
In order to realize the foregoing invention purpose, the invention provides a kind of stratified nano materials, have following general formula:
MX 2，
Wherein M is Mo, W, Nb, Ta, Ti, a kind of among the Zr; X is S or Se.
A kind of preparation method of described stratified nano materials comprises:
Bulk powder nano material and solvent and agate bead are blended in the ball mill, carry out ball milling, form stratified nano materials; Described lumpy nanometer material has identical general formula with layered nano material.
A kind of preparation method of described stratified nano materials comprises:
With normal-butyl reason and MX 2Mix, form Li nMX 2
With Li nMX 2In absciss layer reagent, decompose, form unimolecule stratiform MX 2Material.
A kind of organic solar batteries comprises:
The oxidic transparent conductive substrates;
Be arranged at the organic active layer on the described oxidic transparent conductive substrates;
Be arranged on the metal electrode on the described organic active layer;
Also comprise, be arranged between described oxidic transparent conductive substrates and affiliated mailing active layer or the hole transmission layer between organic active layer and the described metal electrode, described hole transmission layer contains stratified nano materials, and layered nano material has following general formula:
MX 2，
Wherein M is Mo, W, Nb, Ta, Ti, a kind of among the Zr; X is S or Se.
Preferably, also comprise the electron transfer layer that is arranged between described oxidic transparent conductive substrates and the described organic active layer; Described hole transmission layer and described hole transmission layer are positioned at the both sides of described organic active layer.
Preferably, described oxidic transparent conductive substrates is ITO, FTO, AZO, ITAZO electro-conductive glass or transparent flexible plastics.
Preferably, described organic active layer is the alloy of poly-3-hexyl thiophene (P3HT) compounds and fullerene derivate.
Preferably, described alloy is P3HT:PC 61BM, P3HT:ICBA or PDB7:PC 71BM.
A kind of preparation method of organic solar batteries comprises:
Clean oxidic transparent conductive substrates and ozone treatment;
Stratified nano materials solution is spin-coated on the affiliated electrically conducting transparent substrate, forms hole transmission layer; Wherein, layered nano material is prepared according to the method for claim 2 or 3, and with layered nano material solvent dilution;
With even glue method coated polymer mixed solution, form organic active layer at described hole transmission layer, and annealing;
Organic active layer surface evaporation metal electrode after annealing obtains organic solar batteries.
A kind of preparation method of organic solar batteries comprises:
Clean oxidic transparent conductive substrates and ozone treatment;
Spin coating zinc oxide precursor liquid solution on the oxidic transparent conductive substrates after the described ozone treatment, and carry out annealing in process, obtain the zinc oxide electron transfer layer;
With even glue method coated polymer mixed solution, form organic active layer at described zinc oxide electron transfer layer, and annealing;
Organic active layer surface spin coating stratified nano materials solution after annealing forms hole transmission layer; Wherein, layered nano material is prepared according to the method for claim 2 or 3, and with layered nano material solvent dilution;
At described hole transmission layer surface evaporation metal electrode, obtain organic solar batteries.
The present invention is applied to the transition metal dichalcogenide such as stratified material molybdenum bisuphide, two niobium stannides or distannic compound in the solar cell resilient coating, take full advantage of the electric property of stratified material excellence, compare with other materials, defect state only is present in the stratiform border, so defective still less, demonstrates the advantage that is more than other materials.
The present invention adopts the preparation of solution ball-milling method method, and the preparation method is simple, compares with hot evaporation coating method commonly used in the modern technologies, and is with low cost; Spin-coating film, technique is simple, more meets the requirement of extensive Application in manufacture; From the device effect, well play the effect of electronic barrier layer, the device effect is much better than without the resilient coating device, and substantially suitable with the device performance of hot evaporation molybdenum oxide resilient coating.
Description of drawings
Fig. 1 is the reverse organic solar energy cell structure schematic diagram take stratified nano materials as hole transmission layer;
Fig. 2 is the forward organic solar energy cell structure schematic diagram take stratified nano materials as hole transmission layer;
Fig. 3 is MoS 2Scanning electron microscope diagram;
Fig. 4 is MoS 2Transmission electron microscope figure;
Fig. 5 is the J-V curve of embodiment one gained hybrid inorganic-organic solar cell;
Fig. 6 is the J-V curve of embodiment two gained hybrid inorganic-organic solar cells;
Fig. 7 is the J-V curve of embodiment three gained hybrid inorganic-organic solar cells;
Fig. 8 is the J-V curve of embodiment four gained hybrid inorganic-organic solar cells.
Embodiment
In order further to understand the present invention, below in conjunction with embodiment the preferred embodiments of the invention are described, but should be appreciated that the just restriction for further specifying the features and advantages of the present invention rather than patent of the present invention being required of these descriptions.
The present invention is with a series of transition metal dichalcogenide or two stannide layered semiconductor MX 2(M=Mo, W, Nb, Ta, Ti, Zr; X=S, Se) for can adopting following step, the organic solar batteries of hole transmission layer prepares:
(1) preparation of forward organic solar batteries
The preparation of laminar nano transition metal dichalcogenide or two stannides:
The physical mechanical ball-milling method:
Get the block powder that buys in right amount and put into the ball grinder of ball mill, put into suitable solvent and an amount of agate grinding bead;
The running ball mill is peeled off into layer structure with block materials;
Solution after getting ball milling and finishing is made into various respective concentration;
Chemical graft process:
With n-BuLi reduction transition metal dichalcogenide or two stannides, the Li of generation nMX 2(M=Mo, W, Nb, Ta, Ti, Zr; X=S, Se) absciss layer can occur in absciss layer reagent (such as water), obtain monolayer MX 2([MX 2] δ)
With MoS 2Be example, reaction equation is as follows:
nC 4H 9Li?+?MoS 2?=?LinMoS 2?+?n/2?C 8H 18
LinMoS 2?+?(n–δ)?H 2O?=?[MoS 2]?+?nLi?+?(n?δ)/2?H 2↑?+(n–δ)?OH
Then product high speed centrifugation with obtaining is scattered in the corresponding solvent with different concentration;
Ito glass is cleaned up, the stratified nano materials solution that utilizes even glue technology spin coating chemical graft process or physical mechanical ball-milling method to obtain after the ozone treatment, forming the stratified nano materials film is hole transmission layer;
Utilize even glue technology that the organic polymer mixed solution is added thermal agitation at 30 ~ 50 ℃ and be spun on described hole transmission layer surface after more than 2 hours, form organic active layer: described polymer mixed solution is poly-3-hexyl thiophene (P3HT) fullerene derivate (PC 61BM) blend solution, after the active layer film was done, 100 ~ 150 ℃ of annealing in process were 10 ~ 15 minutes in inert atmosphere;
Last evaporation LiF/Al electrode, so far, the device preparation is finished, form conductive substrates anode/stratified nano materials hole transmission layer/P3HT:PCBM active layer //battery structure of LiF/Al electrode.
Preferably, the rotating speed of the even glue spin coating of P3HT and PCBM organic polymer mixed liquor is 700 rev/mins, and spin coating stopped after 18 seconds, and the organic solvent film forming of naturally volatilizing can better be formed and is separated the raising device efficiency;
In above-mentioned steps, the solvent of stratified nano materials configuration solution practicality can have a lot of selections, such as acetone, ethanol, isopropyl alcohol, dimethyl fumarate, 1-METHYLPYRROLIDONE, NVP etc., such matter is better dispersed in NVP (NVP), but when considering this solution as resilient coating on the impact of active layer, to choose isopropyl alcohol be the best balance of solvent dispersiveness and the device efficiency of solution;
Preferably, in the forward solar cell device, the optimization concentration of hole transmission layer is between 2mg/mL ~ 1mg/mL, and rotating speed is 3000 ~ 4000 rev/mins;
Preferred, when the ball milling block materials, need take the less agate ball of particle diameter of the same size, quantity is taked this method for to flush with solution, is more conducive to carry out under the state of lower state ball milling, make block materials better peel off into layer structure, reduce the defective of material.
(2) the oppositely preparation of organic solar batteries
The preparation of laminar nano transition metal dichalcogenide or two stannides: method is with forward organic solar batteries preparation method;
Ito glass is cleaned up, zinc oxide precursor liquid solution in the spin coating after the ozone treatment, 110 ~ 170 ℃ of annealing in process form ZnO film after 1 hour 30 minutes, obtain electron transfer layer; Zinc oxide precursor solution manufacturing method: 0.5g Zinc diacetate dihydrate, 137.5 μ L monoethanolamines and 5mL EGME mix and blend 12 hours.
Utilize even glue technology with the organic polymer mixed solution: poly-3-hexyl thiophene (P3HT) fullerene derivate (PC 61BM) 30 ~ 50 ℃ add thermal agitation and are spun on the above-mentioned device after more than 2 hours, and after the active layer film was done, 100 ~ 150 ℃ of annealing in process were 10 ~ 15 minutes in inert atmosphere; Described inert gas is preferably N 2
Adopt the method for spin coating to be spun on the above-mentioned device stratified nano materials solution of preparation, keep certain rotating speed until be spin-dried for; Obtain hole transmission layer
Last evaporation silver electrode, so far, the device preparation is finished, and forms conductive substrates negative electrode/zinc oxide electron transfer layer/P3HT:PCBM active layer/MoS 2The battery structure of hole transmission layer/Ag electrode.
Preferably, in air, placed one hour after the zinc oxide precursor spin coating is finished, make its autoxidation a period of time;
Preferably, oppositely in the solar cell device, the optimization concentration of hole transmission layer is between 0.5mg/mL ~ 0.25mg/mL, and rotating speed is 3000 ~ 4000 rev/mins;
The present invention selects lower-cost and most transition metal dichalcogenide or two stannides or the two stannide MX of commercialization material 2(M=Mo, W, Nb, Ta, Ti, Zr; X=S, Se), make it peel off into layer structure by solwution method machinery ball milling or chemical graft process, thus unexistent photoelectric characteristic when demonstrating block.Directly prepare resilient coating by spin coating, technique is very simple and be easy to extensive manufacturing, the MoO that its device efficiency that reaches as resilient coating and high energy heat dissipation vapour deposition method prepare 3Resilient coating is very nearly the same.Transition metal dichalcogenide or two stannide stratified materials have advantages of that high work content, defect state are few, and this is to be applied to first in the solar cell, along with the in the future optimization of technique, must show out wide application prospect.
The invention will be further described below in conjunction with drawings and Examples, and this description is just in order better to illustrate the present invention rather than to limit it.The present invention is not limited to particular example as described herein and embodiment.Any those of skill in the art are being further improved and perfect without departing from the spirit and scope of the present invention, all fall into protection scope of the present invention.
Embodiment one:
(1) get the molybdenum disulfide powder 50mg that buys in ball grinder, add the 10mL aqueous isopropanol, and the agate ball of putting into 6mm is in ball grinder to flushing with solution.Opening ball mill work stopped after 5 hours;
(2) get solution behind the ball milling is diluted to 0.5mg/mL with aqueous isopropanol MoS 2Weak solution.Its scanning electron microscope (SEM) photograph and transmission electron microscope picture are as shown in Figure 1, 2;
(3) get ito glass and used respectively acetone, ethanol, three kinds of solution of water ultrasonic 30 minutes, put into UV ozone cleaning machine ozone 20 minutes after drying up with nitrogen gun;
(4) utilize sol evenning machine that the zinc oxide precursor liquid solution is spun on the ito glass, rotating speed is 4000 rev/mins, and the even glue time is 1 minute.After spin coating is finished the ITO sheet was placed one hour in the pure air place, then be positioned on the heating plate 150 ℃ of annealing 90 minutes.After above-mentioned steps is finished, the ITO sheet is changed in the glove box;
(5) in glove box, will be at the organic polymer mixed solution of 40 ℃ of preheatings more than 2 hours: poly-3-hexyl thiophene (P3HT) fullerene derivate (PC 61BM) be spun on the device that obtains in (4), rotating speed is 700 rev/mins, and the even glue time is 18s, naturally placement a period of time, after the active layer film forming, the ITO sheet is positioned on the heating plate 110 ℃ of heating anneals 12 minutes;
(6) get the MoS that configures in the step (2) 2Solution is spared glue method spin coating resilient coating in glove box, rotating speed is 4000 rev/mins, and the spin coating time is 1 minute;
(7) after above step is finished, the approximately wide bar shaped of 3mm is wiped in the device bottom, give over to the electrode contact part.Then, device is changed over to evaporation Ag electrode in the thermal evaporation instrument.Finally, obtain with MoS 2Do the organic solar batteries of resilient coating, its structural representation as shown in Figure 1;
At room temperature environment, use xenon lamp simulated solar irradiation AM1.5, light intensity 100 mWcm -2Under the condition, record the short circuit current 11.63mAcm of best battery -2, open circuit voltage is 0.61 V, and fill factor, curve factor is 0.63, and photoelectric conversion efficiency is 4.46%, and its J-V curve is as shown in Figure 5.Curve a is the dark current curve, and curve b is the illumination current curve.Embodiment two:
(1) ball milling commercialization molybdenum disulfide powder: with embodiment one (1)
(2) get solution behind the ball milling is diluted to 2mg/mL with aqueous isopropanol MoS 2Weak solution.
(3) clean ito glass: with embodiment one (3)
(4) spin coating stratified nano materials hole transmission layer: the MoS that gets configuration in the step (2) 2Solution is spared glue method spin coating resilient coating in glove box, rotating speed is 3000 rev/mins, and the spin coating time is 1 minute;
(5) spin coating organic active layer: with embodiment one (5)
(6) after above step is finished, the approximately wide bar shaped of 3mm is wiped in the device bottom, give over to the electrode contact part.Then, device is changed over to evaporation LiF/Al electrode in the thermal evaporation instrument.Its structural representation as shown in Figure 2;
At room temperature environment, use xenon lamp simulated solar irradiation AM1.5, light intensity 100 mWcm -2Under the condition, record the short circuit current 8.86mAcm of best battery -2, open circuit voltage is 0.57 V, and fill factor, curve factor is 0.62, and photoelectric conversion efficiency is 3.05%, and its J-V curve is as shown in Figure 6.
Embodiment three:
(1) ball milling commercialization two niobium stannide powder: with embodiment one (1);
(2) get solution behind the ball milling is diluted to 0.25mg/mL with aqueous isopropanol NbSe 2Weak solution;
(3) clean ito glass: with embodiment one (3);
(4) spin coating zinc oxide precursor: with embodiment one (4);
(5) spin coating organic active layer: with embodiment one (5);
(6) get the NbSe that configures in the step (2) 2Solution is spared glue method spin coating resilient coating in glove box, rotating speed is 4000 rev/mins, and the spin coating time is 1 minute;
(7) after above step is finished, the approximately wide bar shaped of 3mm is wiped in the device bottom, give over to the electrode contact part.Then, device is changed over to evaporation Ag electrode in the thermal evaporation instrument.Finally, obtain with NbSe 2Do the organic solar batteries of resilient coating;
At room temperature environment, use xenon lamp simulated solar irradiation AM1.5, light intensity 100 mWcm -2Under the condition, record the short circuit current 9.93mAcm of best battery -2, open circuit voltage is 0.60V, and fill factor, curve factor is 0.56, and photoelectric conversion efficiency is 3.34%, and its J-V curve is as shown in Figure 7.
Embodiment four:
(1) ball milling commercialization two niobium stannide powder: with embodiment one (1);
(2) get solution behind the ball milling is diluted to 2mg/mL with aqueous isopropanol NbSe 2Weak solution;
(3) clean ito glass: with embodiment one (3);
(4) spin coating stratified nano materials hole transmission layer: the NbSe that gets configuration in the step (2) 2Solution is spared glue method spin coating resilient coating in glove box, rotating speed is 4000 rev/mins, and the spin coating time is 1 minute;
(5) spin coating organic active layer: with embodiment one (5)
(6) after above step is finished, the approximately wide bar shaped of 3mm is wiped in the device bottom, give over to the electrode contact part.Then, device is changed over to evaporation LiF/Al electrode in the thermal evaporation instrument.Its structural representation as shown in Figure 1;
At room temperature environment, use xenon lamp simulated solar irradiation AM1.5, light intensity 100 mWcm -2Under the condition, record the short circuit current 8.49mAcm of best battery -2, open circuit voltage is 0.56V, and fill factor, curve factor is 0.51, and photoelectric conversion efficiency is 2.43%, and its J-V curve is as shown in Figure 8.
Embodiment five:
(1) ball milling commercialization molybdenum disulfide powder: with embodiment one (1);
(2) get solution behind the ball milling is diluted to 0.25mg/mL with aqueous isopropanol MoS 2Weak solution;
(3) clean ito glass: with embodiment one (3);
(4) spin coating zinc oxide precursor: with embodiment one (4);
(5) spin coating organic active layer: get PTB7 and fullerene derivate PC 71BM (1:1.5, W/W) is dissolved in the chlorobenzene, and the interpolation volume ratio is 3% DIO, stirs half an hour, forms organic mixed solution; Organic liquid mixture is spun on the device that obtains in (4), rotating speed is 1000 rev/mins, and the time is 1 minute;
(6) get the MoS that configures in the step (2) 2Solution is spared glue method spin coating resilient coating in glove box, rotating speed is 3000 rev/mins, and the spin coating time is 1 minute;
(7) after above step is finished, the approximately wide bar shaped of 3mm is wiped in the device bottom, give over to the electrode contact part.Then, device is changed over to evaporation Ag electrode in the thermal evaporation instrument.Finally, obtain with MoS 2Do the organic solar batteries of resilient coating;
At room temperature environment, use xenon lamp simulated solar irradiation AM1.5, light intensity 100 mWcm -2Under the condition, record the short circuit current 13.01mAcm of best battery -2, open circuit voltage is 0.65V, and fill factor, curve factor is 0.55, and photoelectric conversion efficiency is 4.67%.
Embodiment six:
(1) ball milling commercialization two niobium stannide powder: with embodiment one (1);
(2) get solution behind the ball milling is diluted to 0.25mg/mL with aqueous isopropanol NbSe 2Weak solution;
(3) clean ito glass: with embodiment one (3);
(4) spin coating zinc oxide precursor: with embodiment one (4);
(5) spin coating organic active layer: with embodiment five (5);
(6) get the NbSe that configures in the step (2) 2Solution is spared glue method spin coating resilient coating in glove box, rotating speed is 4000 rev/mins, and the spin coating time is 1 minute;
(7) after above step is finished, the approximately wide bar shaped of 3mm is wiped in the device bottom, give over to the electrode contact part.Then, device is changed over to evaporation Ag electrode in the thermal evaporation instrument.Finally, obtain with NbSe 2Do the organic solar batteries of resilient coating.
At room temperature environment, use xenon lamp simulated solar irradiation AM1.5, light intensity 100 mWcm -2Under the condition, record the short circuit current 13.16mAcm of best battery -2, open circuit voltage is 0.65V, and fill factor, curve factor is 0.56, and photoelectric conversion efficiency is 4.78%.
Above a kind of layered semiconductor material for the organic solar batteries hole transmission layer provided by the invention and preparation method thereof is described in detail; having used specific case herein sets forth principle of the present invention and execution mode; the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; should be understood that; for those skilled in the art; under the prerequisite that does not break away from the principle of the invention; can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.

Claims (10)

1. a stratified nano materials is characterized in that, has following general formula:
MX 2，
Wherein M is Mo, W, Nb, Ta, Ti, a kind of among the Zr; X is S or Se.
2. the preparation method of a stratified nano materials claimed in claim 1 is characterized in that, comprising:
Bulk powder nano material and solvent and agate bead are blended in the ball mill, carry out ball milling, form stratified nano materials; Described lumpy nanometer material has identical general formula with layered nano material.
3. the preparation method of a stratified nano materials claimed in claim 1 is characterized in that, comprising:
With normal-butyl reason and MX 2Mix, form Li nMX 2
With Li nMX 2In absciss layer reagent, decompose, form unimolecule stratiform MX 2Material.
4. an organic solar batteries is characterized in that, comprising:
The oxidic transparent conductive substrates;
Be arranged at the organic active layer on the described oxidic transparent conductive substrates;
Be arranged on the metal electrode on the described organic active layer;
Also comprise, be arranged between described oxidic transparent conductive substrates and affiliated mailing active layer or the hole transmission layer between organic active layer and the described metal electrode, described hole transmission layer contains stratified nano materials, and layered nano material has following general formula:
MX 2，
Wherein M is Mo, W, Nb, Ta, Ti, a kind of among the Zr; X is S or Se.
5. organic solar batteries according to claim 4 is characterized in that:
Also comprise the electron transfer layer that is arranged between described oxidic transparent conductive substrates and the described organic active layer; Described hole transmission layer and described hole transmission layer are positioned at the both sides of described organic active layer.
According to claim 4 or 5 described oxidic transparent conductive substrates be ITO, FTO, AZO, ITAZO electro-conductive glass or transparent flexible plastics.
7. it is characterized in that according to claim 4 or 5 described organic solar batteries: described organic active layer is the alloy of poly-3-hexyl thiophene (P3HT) compounds and fullerene derivate.
8. organic solar batteries according to claim 7 is characterized in that, described alloy is P3HT:PC 61BM, P3HT:ICBA or PDB7:PC 71BM.
9. the preparation method of an organic solar batteries is characterized in that, comprising:
Clean oxidic transparent conductive substrates and ozone treatment;
Stratified nano materials solution is spin-coated on the affiliated electrically conducting transparent substrate, forms hole transmission layer; Wherein, layered nano material is prepared according to the method for claim 2 or 3, and with layered nano material solvent dilution;
With even glue method coated polymer mixed solution, form organic active layer at described hole transmission layer, and annealing;
Organic active layer surface evaporation metal electrode after annealing obtains organic solar batteries.
10. the preparation method of an organic solar batteries is characterized in that, comprising:
Clean oxidic transparent conductive substrates and ozone treatment;
Spin coating zinc oxide precursor liquid solution on the oxidic transparent conductive substrates after the described ozone treatment, and carry out annealing in process, obtain the zinc oxide electron transfer layer;
With even glue method coated polymer mixed solution, form organic active layer at described zinc oxide electron transfer layer, and annealing;
Organic active layer surface spin coating stratified nano materials solution after annealing forms hole transmission layer; Wherein, layered nano material is prepared according to the method for claim 2 or 3, and with layered nano material solvent dilution;
At described hole transmission layer surface evaporation metal electrode, obtain organic solar batteries.
CN2013102266236A 2013-06-08 2013-06-08 Layered semiconductor material used for organic solar cell hole transport layer and preparation method of layered semiconductor material Pending CN103311440A (en)

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CN107425122A (en) * 2017-03-20 2017-12-01 中节能万润股份有限公司 A kind of doping type perovskite solar cell and preparation method thereof
CN108140738A (en) * 2016-06-15 2018-06-08 可隆工业株式会社 Organic solar batteries and its manufacturing method
CN108878664A (en) * 2017-05-11 2018-11-23 Tcl集团股份有限公司 Light emitting diode with quantum dots and the preparation method and application thereof
CN110970579A (en) * 2018-09-30 2020-04-07 纳晶科技股份有限公司 Zinc oxide nanocrystalline electron transport layer, preparation method thereof and electronic device
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CN108878664A (en) * 2017-05-11 2018-11-23 Tcl集团股份有限公司 Light emitting diode with quantum dots and the preparation method and application thereof
US10991841B2 (en) 2017-12-13 2021-04-27 Industrial Technology Research Institute Perovskite solar cell and tandem solar cell
CN110970579A (en) * 2018-09-30 2020-04-07 纳晶科技股份有限公司 Zinc oxide nanocrystalline electron transport layer, preparation method thereof and electronic device
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